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Journal articles on the topic 'Si (111) Heterojunction'

Author: Grafiati

Published: 6 September 2023

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1

Chao, Xiong, Chen Lei, and Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction." Open Materials Science Journal 7, no. 1 (October 31, 2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.

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The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

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2

Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77×10-7and 9.36×10-8Amperes.

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3

He, Xiao-Min, Zhi-Ming Chen, Lei Huang, and Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction." Modern Physics Letters B 29, no. 29 (October 25, 2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.

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Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

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4

Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa, and Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces." Journal of Applied Crystallography 46, no. 4 (July 4, 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

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Xu, Bei, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng, and Qianqian Lei. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4H-SiC(0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature. The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding.

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6

Xiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu, and Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode." Key Engineering Materials 538 (January 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.

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The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

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7

Mahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (July 1985): 1252. http://dx.doi.org/10.1116/1.583050.

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8

González, M. L., F. Soria, and M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (May 1990): 1977–82. http://dx.doi.org/10.1116/1.576791.

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9

Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang, and Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

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Abdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim, and Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis." Tikrit Journal of Pure Science 21, no. 7 (February 8, 2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.

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In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn(CH3COO)22H2O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2M) at (350 Co), and studying The electrical properties of ZnO/p-Si heterojunction. (I-V) characteristic in dark and illumination, (C-V) characteristic and The built- in potential (Vbi) is calculated, while from I-V measurements, the ideality factor (β), the Rectification Factor(F) and (Iphoto/Idark) ratio are calculated.

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11

HOSSEINI, A., H. H. GÜLLÜ, E. COSKUN, M. PARLAK, and C. ERCELEBI. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS." Surface Review and Letters 26, no. 06 (July 2019): 1850205. http://dx.doi.org/10.1142/s0218625x18502050.

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Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO2 film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV–visual (UV–Vis) spectral and dark current-voltage (I–V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6[Formula: see text]eV and transmission was around 65–85% in the spectral range of 320–1100[Formula: see text]nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I–V characteristic was studied to determine the possible conduction mechanisms and diode parameters.

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12

Alkallas, Fatemah H., Shoug M. Alghamdi, Ameenah N. Al-Ahmadi, Amira Ben Gouider Trabelsi, Eman A. Mwafy, W. B. Elsharkawy, Emaan Alsubhe, Ayman M. Mostafa, and Reham A. Rezk. "Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application." Micromachines 14, no. 8 (July 31, 2023): 1546. http://dx.doi.org/10.3390/mi14081546.

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The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create the sulfide structure as CdS nano-ropes form, followed by depositing on the Si-substrate by spin coating. The morphological, structural, and optical characteristics of the CdS structure were examined using X-ray diffraction, transmission, and scanning electron microscopy, photoluminescence, and UV-VIS spectroscopy. From X-ray diffraction analysis, the growing CdS spheres have a good crystal nature, with a high purity and desired c-axis orientation along the (002) plane, and the crystallinity was around 30 nm. According to optical characterization, high transparency was found in the visible–near-infrared areas of the electromagnetic spectrum, and the CdS spheres have a direct optical energy band gap of 3.2 eV. After that, the CdS/Si hetero-structured device was found to be improved remarkably after adding CdS. It showed that the forward current is constantly linear, while the dark current is around 4.5 µA. Up to a bias voltage of 4 V, there was no breakdown, and the reverse current of the heterojunctions somewhat increased with reverse bias voltage, while the photocurrent reached up to 580 and 690 µA for using 15 and 30 W/cm2 light power, respectively. Additionally, the ideal factors for CdS/Si heterojunction were 3.1 and 3.3 for 15 and 30 W/cm2 light power, respectively. These results exhibited high performance compared to the same heterojunction produced by other techniques. In addition, this opens the route for obtaining more enhancements of these values based on the changing use of sulfide structures in the heterojunction formation.

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13

Zhang, Yongfang, Tao Ji, Wenlong Zhang, Guoqiang Guan, Qilong Ren, Kaibing Xu, Xiaojuan Huang, Rujia Zou, and Junqing Hu. "A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency." Journal of Materials Chemistry C 5, no. 47 (2017): 12520–28. http://dx.doi.org/10.1039/c7tc04565d.

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14

ABIDRI, B., J. P. LACHARME, M. GHAMNIA, C. A. SÉBENNE, M. EDDRIEF, and M. ZERROUKI. "EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION." Surface Review and Letters 06, no. 06 (December 1999): 1173–78. http://dx.doi.org/10.1142/s0218625x9900130x.

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Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The room temperature interaction starts as an apparent intercalation process until Cu islands begin to form, beyond about 50 ML. Upon annealings as low as 250°C, several ML of Cu disappear into the bulk of an apparently recovered GaSe, towards the GaSe/Si interface.

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15

Zainuriah, Hassan, Sha Shiong Ng, G. L. Chew, F. K. Yam, Mat Johar Abdullah, M. Roslan Hashim, Kamarulazizi Ibrahim, and M. E. Kordesch. "Growth and Properties of GaN/Si Heterojunction." Materials Science Forum 480-481 (March 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.

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Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a detailed characterization study of GaN thin film grown on Si(111) with AlN buffer layer by low pressure metalorganic chemical vapor deposition (LP-MOCVD) was carried out. Post deposition analysis includes scanning electron microscopy (SEM), x-ray diffraction (XRD), Hall and infrared (IR) spectroscopy techniques. The IR spectra were compared to the calculated spectra generated with a damped single harmonic oscillator model. Through this method, a complete set of reststrahlen parameters (such as ε∞, S, wTO, γ) of the GaN epilayer were obtained. Our results show that the GaN film has a single crystalline structure. Current-voltage characteristics (I-V) of this GaN/Si heterojunction were measured at room temperature. Rectification behavior was observed for this anisotype heterojunction. The electrical characteristics of Ni Schottky barriers on this unintentionally doped n-type film were also investigated. The barrier height of Ni/GaN Schottky barriers has been determined to be 0.93 eV by I-V measurement.

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Hussein, B. H., H. K. Hassun, B. K. H. Maiyaly, and S. H. Aleabi. "Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction." Journal of Ovonic Research 18, no. 1 (February 2022): 37–34. http://dx.doi.org/10.15251/jor.2022.181.37.

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Transition metal Copper doped Cadmium oxide and (Cu: CdO and n-CdO: Cu / p-Si) thin films were prepared onto glass and p-type single crystal (111) Si substrates at temperature 300 K by thermal evaporation technique with thickness (400±30) nm. The effects of different Cu ratios on the CdO thin films and heterojunction of n-CdO / p-Si.. The X-ray diffraction analysis approves the CdO films are polycrystalline and cubic structure with lattice parameter of 0.4689 nm. The optical transmittance exhibits excellent optical absorption for 6% Cu doping. Decreased of optical band gap from 2.1 to 1.8 eV. Hall measurement approves that CdO material n type with a maximum carrier mobility of 144.6 (cm2 /Vs) with resistivity of 0.107991 (Ω.cm) were achieved for 6% Copper (Cu) doping. The I-V characteristics of heterojunction prepared under illumination was carried out by(100 mW/cm2) incident power density at different Cu doping.

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17

Stegemann, Bert, Jan Kegel, Lars Korte, and Heike Angermann. "Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells." Solid State Phenomena 255 (September 2016): 338–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.338.

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Key steps in the fabrication of high-efficiency a-Si:H/c-Si heterojunction solar cells are the controlled pyramid texturing of the c-Si substrates to minimize reflection losses and the subsequent passivation by deposition of a high-quality a-Si:H layer to reduce recombination losses. This contribution reviews our recent results on the optimization of the wet-chemical texturing of crystalline Si wafers for the preparation of heterojunction solar cells with respect to low reflection losses, low recombination losses and long minority carrier lifetimes. It is demonstrated, that by joint optimization of both saw damage etch and texture etch the optical and electronic properties of the resulting pyramid morphology can be controlled. Effective surface passivation and thus long minority charge carrier lifetimes are achieved by deposition of intrinsic amorphous Si ((i) a-Si:H) layers. It is shown, that optimized (i) a-Si:H deposition parameters for planar Si (111) wafers can be transferred to a-Si:H layer deposition on random pyramid textured Si (100) wafers. Statistical analysis of the pyramid size distribution revealed that a low fraction of small pyramids leads to longer minority charge carrier lifetimes and, thus, a higher Voc potential for solar cells.

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Deng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko, and Takashi Suemasu. "p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)." Applied Physics Express 11, no. 6 (May 10, 2018): 062301. http://dx.doi.org/10.7567/apex.11.062301.

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SALIM, EVAN T., MARWA S. AL WAZNY, and MAKRAM A. FAKHRY. "GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE." Modern Physics Letters B 27, no. 16 (June 6, 2013): 1350122. http://dx.doi.org/10.1142/s0217984913501224.

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Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n- Bi 2 O 3/p- Si heterojunction device was investigated. The obtained current–voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I–V characteristics show that all prepared devices are of abrupt type.

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Dang, Zhaoying, Wenhui Wang, Jiayi Chen, Emily S. Walker, Seth R. Bank, Deji Akinwande, Zhenhua Ni, and Li Tao. "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction." 2D Materials 8, no. 3 (March 19, 2021): 035002. http://dx.doi.org/10.1088/2053-1583/abea65.

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21

Roul, Basanta, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, and S. B. Krupanidhi. "Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height." Journal of Applied Physics 129, no. 24 (June 28, 2021): 244502. http://dx.doi.org/10.1063/5.0056053.

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22

Hunger, R., Chr Pettenkofer, and R. Scheer. "Dipole formation and band alignment at the Si(111)/CuInS[sub 2] heterojunction." Journal of Applied Physics 91, no. 10 (2002): 6560. http://dx.doi.org/10.1063/1.1458051.

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Pan, M., S. P. Wilks, P. R. Dunstan, M. Pritchard, R. H. Williams, D. S. Cammack, and S. A. Clark. "Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets." Thin Solid Films 343-344 (April 1999): 605–8. http://dx.doi.org/10.1016/s0040-6090(98)01708-8.

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Sittimart, Phongsaphak, Adison Nopparuchikun, and Nathaporn Promros. "Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering." Advances in Materials Science and Engineering 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/6590606.

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In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of 2.66×10-1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung’s and Norde’s methods. Computation using the TE theory showed that the values of ideality factor (n) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height (ϕb) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the n and ϕb values computed using the TE theory were in agreement with those computed using Cheung’s and Norde’s methods. The values of series resistance (Rs) computed at 300 K and 20 K by Norde’s method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the Rs values found through computation by Cheung’s method. The dramatic increment of Rs value at low temperatures was likely attributable to the increment of n value at low temperatures.

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Heo, Joo-Hoe, Hyuk-Hyun Ryu, and Jong-Hoon Lee. "Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness." Korean Journal of Materials Research 21, no. 1 (January 27, 2011): 34–38. http://dx.doi.org/10.3740/mrsk.2011.21.1.034.

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Sánchez-Garcı́a, M. A., F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, and E. Muñoz. "Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)." Journal of Applied Physics 87, no. 3 (February 2000): 1569–71. http://dx.doi.org/10.1063/1.372052.

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Ji, Tao, Qian Liu, Rujia Zou, Yangang Sun, Kaibing Xu, Liwen Sang, Meiyong Liao, Yasuo Koide, Li Yu, and Junqing Hu. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction." Advanced Functional Materials 26, no. 9 (January 29, 2016): 1400–1410. http://dx.doi.org/10.1002/adfm.201504464.

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binti Mohamad, Fariza, Junji Sasano, Tsutomu Shinagawa, Seiji Watase, and Masanobu Izaki. "Electrochemical Construction of (0001)-ZnO/(111)-Cu₂O Heterojunction Diode with Excellent Rectification Feature." Advanced Materials Research 287-290 (July 2011): 1412–15. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1412.

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The (111)-p-Cu2O/(0001)-n-ZnO heterostructure was successfully fabricated using low-temperature electrodeposition method on Au(111)/Si(100) substrate. The ZnO film deposited at positive current density was composed of aggregates of isolated hexagonal columnar grains, and the interface between ZnO and Cu2O layer was clearly observed. (0002)-oriented continuous ZnO layer deposited on the (111)-Cu2O layer at negative current density, but the metallic Cu layer was formed between ZnO and Cu2O layers by reducing Cu2O to Cu during ZnO deposition. The Cu2O/isolated-ZnO heterostructure showed ohmic feature, and (111)-Cu2O/Cu/(0002)-ZnO heterostructures showed an excellent rectification with rectification ratio of 85.

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Pattada, B., Jiayu Chen, M. O. Manasreh, S. Guo, D. Gotthold, M. Pophristic, and B. Peres. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates." Journal of Applied Physics 93, no. 9 (May 2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.

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Kumar, Arun, Samrat Mukherjee, Himanshu Sharma, Umesh Kumar Dwivedi, Sunil Kumar, Rajesh K. Gangwar, and Ravi Kant Choubey. "Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode." Physica Scripta 97, no. 4 (April 1, 2022): 045819. http://dx.doi.org/10.1088/1402-4896/ac6078.

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Abstract Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions. The x-ray diffraction (XRD) patterns indicate the deposited ZnS films exhibit good crystallinity with the growth direction along the (111) planes of a cubic zinc blend structure. The crystallite size of all the deposited ZnS thin films have been calculated using the Scherer formula and found to be in the range of 2.2–2.7 nm which is very close (∼4 nm) to the size estimated using transmission electron microscopy (TEM). The surface morphology of the deposited ZnS thin films were studied by scanning electron microscopy (SEM) and it was observed that spherical nanoparticles agglomerated with the increase in deposition time. Furthermore, the optical properties of the deposited ZnS thin films were studied using UV-visible (UV-VIS) and photoluminescence (PL) spectroscopy. The effective calculated band gap was found in the range from 3.7–3.82 eV for all the samples, however PL spectra shows multiple emissions in the as-deposited ZnS films, indicating the presence of intrinsic defects, The characteristics of the fabricated ZnS/p-Si heterojunction diode was studied by measuring the dark current-voltage (I–V) relation using thermionic emission model. Electrical parameters such as barrier height, saturation current, ideality factor and series resistance were extracted from the I–V characteristics of the fabricated Schottky diodes. The barrier potential for all the ZnS/p-Si heterojunction diodes range between 0.829–0.857. Moreover, the calculated ideality factor was found very close to the ideal value of the diode (1.34 and 1.43) in the devices fabricated under stirring conditions.

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31

Li, Yapeng, Yingfeng Li, Jianyuan Wang, Zhirong He, Yonghong Zhang, Qi Yu, and Juncai Hou. "The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction." Journal of Electron Spectroscopy and Related Phenomena 217 (May 2017): 1–5. http://dx.doi.org/10.1016/j.elspec.2017.03.007.

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32

McKernan, S., and C. B. Carter. "Observation of double ribbons in GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 928–29. http://dx.doi.org/10.1017/s0424820100106703.

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The characterization of GaAs on Si is usually performed using cross-section TEM specimens which have been prepared so that the heterojunction is perpendicular to the plane of the foil. In this configuration, however, dislocations present in the GaAs (which lie in the {111} glide planes) are all inclined to the foil. Only a short segment of the dislocation will thus be visible in the thin foil, and even this short segment will be affected over most of its length by the presence of the surface so that it may not be representative of dislocations in the ‘bulk’ epilayer. By preparing TEM cross-section specimens such that the foil normal is close to <111>, long dislocation segments may be observed lying in their glide plane. Observations on specimens prepared in this manner reveal the presence of significant numbers of stacking-fault double-ribbons. This defect appears as a group of three partial dislocations, having the same Burgers vector, bounding two stacking-fault ribbons.

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Du, Chen-Hsun, Chien-Hsun Chen, Teng-Yu Wang, Jui-Chung Hsiao, Chun-Ming Yeh, Chun-Heng Chen, J. Andrew Yeh, and Peichen Yu. "Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates." ECS Journal of Solid State Science and Technology 4, no. 8 (2015): P319—P323. http://dx.doi.org/10.1149/2.0171508jss.

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Switzer, Jay, Avishek Banik, and Bin Luo. "(Invited) Epitaxial Electrodeposition of Wide Bandgap Semiconductors for Transparent and Flexible Electronics." ECS Meeting Abstracts MA2022-01, no. 23 (July 7, 2022): 1128. http://dx.doi.org/10.1149/ma2022-01231128mtgabs.

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Single-crystal silicon is the bedrock of semiconductor devices due to the high crystalline perfection that minimizes electron-hole recombination, and the dense SiOx native oxide that minimizes surface states. One issue with the material is that it is both brittle and opaque. There is interest in moving beyond the planar structure of conventional Si-based chips to produce flexible and transparent electronic devices such as wearable solar cells, sensors, and flexible displays. In this talk we will discuss the electrodeposition of transparent, wide bandgap semiconductors such as ZnO, CuI, and CuSCN that can be produced as epitaxial films on single-crystal and single-crystal-like substrates. These epitaxial films have an orientation that is controlled by the substrate, with electronic properties that mimic those of single crystals. The talk will emphasize the electrodeposition of the wide bandgap hole conductors CuI and CuSCN. They are electrodeposited by electrochemically reducing Cu(II)EDTA to Cu(I) in the presence of either iodide or thiocyanate anions. Cubic CuI deposits as dense films on Si(111), and CuSCN deposits as nanowires on Au(111). The CuI is epitaxial on the Si(111) in spite of a 2.4 nm thick interfacial SiOx layer. The rectifying p-CuI/SiOx/n-Si heterojunction diode shows an ideality factor of 1.5, a built-in voltage of 0.67 V, and a barrier height of 0.91 eV. The crystal structure and morphology of the CuSCN nanowires can be controlled by varying the SCN-/Cu(II) ratio in solution (see Fig. 1). We also show that the epitaxial films can be removed by a simple lift-off procedure to produce single-crystal-like flexible foils of transparent semiconductors. Fig. 1 – Controlling the crystal structure and morphology of CuSCN nanowires through the SCN-/Cu(II) ratio in solution. Top micrographs are of rhombohedral CuSCN deposited using SCN-/Cu(II) = 4, and the bottom micrographs are of hexagonal CuSCN deposited using SCN-/Cu(II) = 2. The nanowires were both on Au(111), and were deposited at a potential of -0.4 V vs. Ag/AgCl. Figure 1

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35

Li, Yapeng, Yingfeng Li, Yonghong Zhang, Juncai Hou, Wenyi Liu, and Jianyuan Wang. "A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition." Journal of Materials Science: Materials in Electronics 28, no. 17 (May 18, 2017): 13053–57. http://dx.doi.org/10.1007/s10854-017-7137-6.

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36

Guan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang, and Jingbo Wu. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application." Micromachines 14, no. 1 (January 9, 2023): 168. http://dx.doi.org/10.3390/mi14010168.

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The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage Vg is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high Id-sat of 750 mA/mm and a low Vknee of 2.0 V and presents ft and maximum frequency (fmax) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor OPTIM can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.

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37

Das, U. K., M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire. "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films." Applied Physics Letters 92, no. 6 (February 11, 2008): 063504. http://dx.doi.org/10.1063/1.2857465.

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38

Ku, Ching-Shun, Jheng-Ming Huang, Ching-Yuan Cheng, Chih-Ming Lin, and Hsin-Yi Lee. "Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition." Applied Physics Letters 97, no. 18 (November 2010): 181915. http://dx.doi.org/10.1063/1.3511284.

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39

Hill, D. M., F. Xu, Zhangda Lin, and J. H. Weaver. "Summary Abstract: X‐ray photoelectron spectroscopy measurements of kinetic parameters at elevated temperature for Ge/Si(111)‐7×7 heterojunction formation." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (May 1988): 1350–51. http://dx.doi.org/10.1116/1.575700.

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40

Selman, Abbas M., Z. Hassan, M. Husham, and Naser M. Ahmed. "A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO2 nanorod array on p-Si(111)." Applied Surface Science 305 (June 2014): 445–52. http://dx.doi.org/10.1016/j.apsusc.2014.03.109.

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41

Thanh Tung, Nguyen, Phuc Huu Dang, and Tran Le. "Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film." Science & Technology Development Journal - Engineering and Technology 2, no. 4 (February 28, 2020): 240–45. http://dx.doi.org/10.32508/stdjet.v2i4.604.

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N-doped SnO2 films with varying thickness (320, 420, 520, 620, and 720 nm) were deposited at 300oC in mixed – gas sputtering Ar/N (1:1) using DC magnetron sputtering. Influence of thickness on structure, optical constants (refractive index or extinction coefficient), and electrical properties were investigated by methods such as X-ray diffraction, Uv-Vis spectra, and Hall measurement. The results show that crystalline quality and optical constants improve with increasing thickness. Specifically, NTO – 620 film has the best crystal structure and maximum values such as crystal size, refractive index, and carrier mobility, as well as the lowest extinction coefficient. Also, NTO films have a cubic structure with (111) peak as the preferred peak. Besides, the hole mobility increases with the increase of the thickness and reaches the maximum value of 14.95 cm2V-1s-1 for NTO – 620 films. The electrical properties of p-type NTO films were verified by X-ray electron spectroscopy (XPS) and I-V characteristic of p – NTO/n – Si heterojunction under illumination. P-type NTO – 620 films were fabricated on n-type Si substrate had a light-to-dark current ratio of 58 at - 6V, these results showed that p-type NTO films might have a promising future in optical sensors applications.

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42

Ravikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, and G. I. Ng. "Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy." Journal of Applied Physics 117, no. 2 (January 14, 2015): 025301. http://dx.doi.org/10.1063/1.4905620.

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43

Şakar, Betül Ceviz, Zeynep Orhan, Fatma Yıldırım, and Ş. Aydoğan. "Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device." Journal of Physics D: Applied Physics 55, no. 42 (August 22, 2022): 425107. http://dx.doi.org/10.1088/1361-6463/ac8081.

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Abstract In this work, the electrical and photoresponse measurements of a transparent conductive Al-doped ZnO (AZO)/n-Si heterojunction device were conducted in visible light and UV wavelengths. AZO film was deposited by sputtering onto an n-Si wafer and investigated by means of morphological, chemical and electrical characterizations. The AZO/n-Si rectifying device exhibits an excellent reproducibility without noticeable variations after 90 days of measurements. At self-powered mode, the maximum on/off ratios were determined as 3081 for visible light and 4778 for UV light illumination of 365 nm. The responsivity and detectivity of the AZO/n-Si photodetector were 0.128 A W−1 and 1.05 × 1011 Jones for 365 nm, whereas they were 0.055 A W−1 and 4.60 × 1010 Jones for 395 nm, respectively (at −2.0 V). This study demonstrated that the n-AZO/n-Si isotype heterojunction photodetector was fabricated at low cost and it is a potential candidate in both the visible region and the UV region with a good performance, in contrast to the widely studied pn heterojunctions.

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44

Mahowald, P. H., R. S. List, J. Woicik, P. Pianetta, and W. E. Spicer. "Si/InP(110) heterojunction." Physical Review B 34, no. 10 (November 15, 1986): 7069–75. http://dx.doi.org/10.1103/physrevb.34.7069.

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45

List, R. S., P. H. Mahowald, J. Woicik, and W. E. Spicer. "The Si/GaAs(110) heterojunction." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 3 (May 1986): 1391–95. http://dx.doi.org/10.1116/1.573577.

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46

Li, Lian Bi, and Zhi Ming Chen. "Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)." Materials Science Forum 858 (May 2016): 221–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.221.

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The Si/SiC heterojunctions were prepared on 6H-SiC(0001) by low-pressure chemical vapour deposition at 900°C. X-ray diffraction was employed to investigate the in-plane orientation of Si/SiC heterojunctions. A FCC-on-HCP parallel epitaxy was achieved for the Si(111)/SiC(0001) heterostructure with a growth temperature of 900°C and the in-plane orientation relationship was [01-1]Si//[11-20]6H-SiC. Based on the in-plane orientation characterizations, the lattice-structure model of the Si/6H-SiC heterostructure was constructed. It is shown that when the in-plane orientation was (111)[01-1]Si//(0001)[11-20]6H-SiC, the Si/6H-SiC interface had a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%, and the misfit dislocation density at the Si/SiC interface was calculated as 0.487×1014cm-2.

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47

Abidri, B., J. P. Lacharme, M. Ghamnia, C. A. Sébenne, and M. Zerrouki. "Effect of Cu on InSe/Si(111) heterojunctions." European Physical Journal Applied Physics 8, no. 2 (September 1999): 153–58. http://dx.doi.org/10.1051/epjap:1999241.

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48

Pan, Xujie, Jing He, Lei Gao, and Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions." Nanomaterials 9, no. 12 (December 12, 2019): 1771. http://dx.doi.org/10.3390/nano9121771.

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This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi2Se3/Si junction, and of 15.5% with a 0.8 ms response time for the Sb2Te3/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi2Se3 (Sb2Te3)/Si heterojunctions can serve as monochromatic NIR photodetectors.

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Шарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын, А. В. Солнышкин, О. Н. Сергеева, Е. Ю. Каптелов, and И. П. Пронин. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния." Физика твердого тела 64, no. 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.

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The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coefficients have close values of the order of γ ~ (0.7-1)•10-10 С/cm2K. It is shown that to increase the magnitude of the pyroresponse it is necessary to deposit an AlN layer with a thickness exceeding 1 μm on the AlxGa1-xN/SiC/Si surface. This leads to record values of the pyroelectric coefficient γ ~ 18•10-10 С/cm2K for AlN crystals and films

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50

ISMAIL, RAID A., KHALID Z. YAHYA, and OMAR A. ABDULRAZAQ. "PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION." Surface Review and Letters 12, no. 02 (April 2005): 299–303. http://dx.doi.org/10.1142/s0218625x05007074.

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Highly (101)-oriented p-Ag 2 O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties of Ag 2 O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

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