Relevant bibliographies by topics / Semiconductors – Plasma effects

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Semiconductors – Plasma effects'

Author: Grafiati
Published: 4 June 2021
Last updated: 13 February 2022

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Journal articles on the topic "Semiconductors – Plasma effects"

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Rolfs, C. "Metals, the plasma of the poor man?" HNPS Advances in Nuclear Physics 12 (August 30, 2021): 16. http://dx.doi.org/10.12681/hnps.3342.

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The electron screening effect in the d(d,p)t reaction has been studied for deuterated metals, insulators, and semiconductors, i.e. 58 samples in total. As compared to measurements performed with a gaseous D2 target, a large effect has been observed in most metals, while a small (gaseous) effect is found e.g. for the insulators, semiconductors, and lanthanides. The periodic table provides the ordering of the observed small and large effects in the samples. An explanation of the large effects in metals is possibly provided by the classical plasma screening of Debye applied to the quasi-free metallic electrons. The data also provide information on the solubility of hydrogen in the samples.
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Juršėnas, Saulius, G. Kurilčik, and A. Žukauskas. "Dense Electron-Hole Plasma Effects on Energy Relaxation in Highly Excited Polar Semiconductors." Materials Science Forum 297-298 (December 1998): 99–102. http://dx.doi.org/10.4028/www.scientific.net/msf.297-298.99.

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Al-Yousef, Haifa A., Sh M. Khalil, and Alkesh Punjabi. "Degeneracy in Magneto-Active Dense Plasma." Advances in Mathematical Physics 2020 (January 23, 2020): 1–6. http://dx.doi.org/10.1155/2020/6495807.

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Degenerate dense plasmas are of great interest due to their important applications in modern technology and astrophysics. Such plasmas have generated a lot of interest in the last decade owing to their importance in many areas of physics such as semiconductors, metals, microelectronics, carbon nanotubes, quantum dots, and quantum wells. Besides, degenerate plasmas present very interesting features for fusion burning waves’ ignition and propagation. In this paper, we investigated the effects of static magnetic field on energy states and degeneracy of electrons in dense plasma. Using perturbation theory, two cases are considered, strongly and weakly magnetized electrons. Strong magnetic field will not eliminate completely the degeneracy, but it functions to reduce degeneracy. Perturbed energy eigenvalues ΔE are calculated to high accuracy. Besides, regardless of whether the perturbed state is degenerate or not, the energy ΔE is given by considering the average of orbital and spin coupling Ws=ℵrL→·S→ with respect to the eigenfunction Ψn,l,m,ms. Here L→ is the angular momentum vector, S→ is the spin vector of electrons, and ℵr is the energy of spin orbit coupling in plasma, which plays a crucial role in the study of energy states and degeneracy of plasma electrons.
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B�nyai, L., and S. W. Koch. "A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors." Zeitschrift f�r Physik B Condensed Matter 63, no. 3 (September 1986): 283–91. http://dx.doi.org/10.1007/bf01303807.

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Rodríguez, M. A., J. L. Carrillo, and J. Reyes. "Thermalization and cooling processes in a dense photogenerated plasma in polar semiconductors: Effects of screening and phonon heating." Physical Review B 35, no. 12 (April 15, 1987): 6318–27. http://dx.doi.org/10.1103/physrevb.35.6318.

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Kao, Chyuan-Haur, Yen-Lin Su, Wei-Jen Liao, Ming-Hsien Li, Wei-Lun Chan, Shang-Che Tsai, and Hsiang Chen. "Effects of CF4 Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors." Crystals 10, no. 9 (September 14, 2020): 810. http://dx.doi.org/10.3390/cryst10090810.

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Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. However, there are certain limitations on such techniques, such as reliability concerns and isolation problems. In this research, a novel design of an EIS membrane consisting of an optical material of indium gallium oxide (IGO) was demonstrated. Compared with conventional treatment such as annealing, Ti doping and CF4 plasma treatment were incorporated in the fabrication of the film. Because of the effective treatment of doping and plasma treatment, the defects were mitigated and the membrane capacitance was boosted. Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.
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Yang Liu, Yang Liu, Yue Tong Yue Tong, Suyu Li Suyu Li, Ying Wang Ying Wang, Anmin Chen Anmin Chen, and and Mingxing Jin and Mingxing Jin. "Effect of sample temperature on laser-induced semiconductor plasma spectroscopy." Chinese Optics Letters 14, no. 12 (2016): 123001–5. http://dx.doi.org/10.3788/col201614.123001.

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NOZARI, KOUROSH, and MAHYAR MADADI. "BANDGAP NARROWING IN NANO-WIRES." International Journal of Modern Physics C 17, no. 02 (February 2006): 167–85. http://dx.doi.org/10.1142/s0129183106009102.

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In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order GW dynamical screening approximation is used in the calculation by treating electron–electron Coulomb interaction and electron-optical phonon interaction. Using a numerical scheme, screened Coulomb potential, probability of different states, profile of charge density and the values of the renormalized gap energy are calculated and the effects of variation of confinement potential width and temperature are studied.
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Chen, Yi-Ming, Chien-Hung Wu, Kow-Ming Chang, Yu-Xin Zhang, Ni Xu, Tsung-Ying Yu, and Albert Chin. "Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4110–13. http://dx.doi.org/10.1166/jnn.2020.17556.

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Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.
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Ahmed, Sabah M. "Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method." Innovaciencia Facultad de Ciencias Exactas, Físicas y Naturales 6, no. 1 (December 28, 2018): 1–9. http://dx.doi.org/10.15649/2346075x.463.

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Introduction: In recent years a metal oxide semiconductors have been paid attention due to their excellent chemical and physical properties. ZnO (Zinc oxide) is considered as one of the most attractive semiconductor materials for implementation in photo-detectors, gas sensors, photonic crystals, light emitting diodes, photodiodes, and solar cells, due to its novel electrical and optoelectronic properties. There are different uses of metal oxide semiconductors such us, UV photodetectors which are useful in space research’s, missile warning systems, high flame detectors, air quality spotting, gas sensors, and precisely calculated radiation for the treatment of UV-irradiated skin. ZnO is a metal oxide semiconductors and it is used as a transparent conducting oxide thin film because it has the best higher thermal stability, best resistance against the damage of hydrogen plasma processing and relatively cheaper if one compares it with ITO. Materials and Methods: On glass substrates, Al-doped ZnO (AZO) nanorods have been grown by a low -cost chemical bath deposition (CBD) method at low temperature. The seed layer of ZnO was coated on glass substrates. The effect of the Al-doping on the aligned, surface morphology, density, distribution, orientation and structure of ZnO nanorods are investigated. The Al-doping ratios are 0%, 0.2%, 0.8% and 2%. The Aluminum Nitrate Nonahydrate (Al (NO3)3.9H2O) was added to the growth solution, which is used as a source of the aluminum dopant element. The morphology and structure of the Al-doped ZnO nanorods are characterized by field emission scanning electron microscopy (FESEM) and high-resolution X-ray diffractometer (XRD). using the radio RF (Radio frequency) magnetron technique. Results and Discussion: The results show that the Al-doping have remarkable effects on the topography parameters such as diameter, distribution, alignment, density and nanostructure shape of the ZnO nanorods. These topography parameters have proportionally effective with increases of the Al-doping ratio. Also, X-ray diffraction results show that the Al-doping ratio has a good playing role on the nanostructure orientation of the ZnO nanorods. Conclusions: The Aluminum Nitride Nanohydrate considered as a good Aluminum source for doping ZnONR. It is clear from FESEM results that the Al-doping of ZnONR has a remarkable effect on the surface topography of nanorods for all aluminum doping ratios. From XRD patterns, it concludes that as the Al-doping ratio increases, the reorientation of the nanostructure of ZnO increases towards [100] direction. The results obtained also have shown that the average diameter of a nanorod is increased with increasing the ratio of Al-doping.
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Dissertations / Theses on the topic "Semiconductors – Plasma effects"

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OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

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The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and differential transmission spectra. The measured spectra reveal several beautiful effects which are attributed to the many-particle effects of electron-hole plasma. The spectra reveal: bandgap renormalization, broadening of the tail states and screening of the continuum states, state filling (spectral hole burning), thermalization of nonthermal carrier population distributions, band filling due to carrier relaxation of the thermal and nonthermal distributions, direct electron-hole recombination and long lived (>>100 ps) tail states which are attributed to electron trapping. Absorption edge dynamics discussed in this dissertation span 15 orders of magnitude.
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Osei-Yiadom, Eric. "Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices." Thesis, University of North Texas, 2010. https://digital.library.unt.edu/ark:/67531/metadc33192/.

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Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circuit devices. These films are needed in microelectronic device interconnects to lower power consumption and minimize cross talk between metal lines that "interconnect" transistors. Low-k materials currently in production for the 45 and 65 nm node are most often organosilicate glasses (OSG) with dielectric constants near 2.8 and nominal porosities of 8-10%. The next generation of low-k materials will require k values 2.6 and below for the 45 nm device generation and beyond. The continuous decrease in device dimensions in ultra large scale integrated (ULSI) circuits have brought about the replacement of the silicon dioxide interconnect dielectric (ILD), which has a dielectric constant (k) of approximately 4.1, with low dielectric constant materials. Lowering the dielectric constant reduces the propagation delays, RC constant (R = the resistance of the metal lines; C = the line capacitance), and metal cross-talk between wires. In order to reduce the RC constants, a number of low-k materials have been studied for use as intermetal dielectrics. The k values of these dielectric materials can be lowered by replacing oxide films with carbon-based polymer films, incorporating hydrocarbon functional groups into oxide films (SiOCH films), or introducing porogens in the film during processing to create pores. However, additional integration issues such as damage to these materials caused by plasma etch, plasma ash, and wet etch processes are yet to be overcome. This dissertation reports the effects of plasma, temperature and chemical reactions on low-k SiOCH films. Plasma ash processes have been known to cause hydrophobic films to lose their hydrophobic methyl groups, rendering them to be hydrophilic. This allows the films to readily absorb moisture. Supercritical carbon dioxide (SC-CO2) can be used to transport silylating agents, hexamethyldisilazane (HMDS) and diethoxy-dimethlysilane (DEDMS), to functionalize the damaged surfaces of the ash-damaged films. The thermal stability of the low-k films after SC-CO2 treatment is also discussed by performing in-situ heat treatments on the films. UV curing has been shown to reduce the amount of pores while showing only a limited change dielectric constant. This work goes on to describe the effect of UV curing on low-k films after exposing the films to supercritical carbon dioxide (CO2) in combination with tetramethylorthosilicate (TMOS).
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Hessami, Pilehrood Saeid. "Electronic properties of semiconductor nanostructures under terahertz radiation." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20061026.162405/index.html.

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Phan, Thanh Long. "Etude fondamentale des mécanismes physico-chimiques de gravure plasma basés sur les effets stériques et de diffusion. Comportements prévisionnels de la gravure des éléments de la colonne IV et des composés III-V par les halogènes : loi de similitude." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01062182.

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L'objectif de ce travail porte sur la généralisation de la modélisation de la gravure du silicium dans les plasmas de fluor ou de chlore à celle de la gravure des éléments de la colonne IV et des composés III-V de structure cristalline de type diamant ou zinc-blende dans les plasmas d'halogènes, i.e. fluor, chlore, brome et iode. Dans ce contexte, les effets stériques et de diffusion en volume et/ou en surface en constituent les problématiques principales. Cette généralisation s'appuie sur le modèle de gravure de Petit et Pelletier qui, par rapport aux modèles antérieurs, prend en compte un certain nombre d'hypothèses distinctes ou additionnelles telles que les interactions répulsives entre adatomes d'halogènes proches voisins, les mécanismes de Langmuir-Hinshelwood pour la formation des produits de réaction, la nature mono-couche ou multi-couches de l'adsorption, et la diffusion des adatomes en surface. Les effets stériques relatifs à la diffusion des atomes d'halogènes à travers les surfaces (100) des structures cristallines des éléments de la colonne IV et des composés III-V définissent une première loi de similitude entre la maille du réseau cristallin et le rayon ionique de Shannon des atomes d'halogènes concernant leurs conditions de diffusion en volume. Cette loi se traduit par un diagramme prévisionnel, commun aux éléments de la colonne IV et aux composés III-V, délimitant les systèmes de gravure de types mono-couche et multi-couches. Les effets stériques relatifs aux mécanismes réactionnels de gravure sur les surfaces (100) aboutissent à des secondes lois de similitude entre la maille du réseau et le rayon covalent des adatomes d'halogènes caractérisant la nature de la gravure : gravure isotrope, gravure anisotrope, ou absence de gravure. Ces lois de similitude, distinctes pour les éléments de la colonne IV et les composés III-V (stœchiométrie différente des produits de réaction), se traduisent par deux diagrammes prévisionnels délimitant les différents domaines de gravure. Les diagrammes prévisionnels pour les éléments de la colonne IV ont pu être validés, d'une part, à partir des résultats expérimentaux antérieurs, et, d'autre part, en l'absence de données, à partir d'études expérimentales complémentaires : gravure de Si et Ge en plasma de brome et d'iode, gravure de Sn en plasma d'iode.
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Godet, Ludovic. "Développement d'un procédé de dopage de matériaux semi-conducteurs par plasma : caractérisation du plasma et de son interaction avec les matériaux." Nantes, 2006. http://www.theses.fr/2006NANT2085.

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Le but de ce travail est de caractériser le plasma de trifluorure de bore (BF3) et son interaction avec les matériaux pendant le procédé de dopage des jonctions fines pour les semi-conducteurs utilisant un procédé de plasma pulsé (PLAD). Afin de mesurer in-situ la distribution en énergie des ions présents dans le plasma, accéléré par le pulse négatif et implantés dans le substrat de silicium, une cathode spéciale a été conçue avec un spectromètre de masse installé en son centre. La mesure de ces distributions donne des informations sur les processus de collision qui surviennent à l’intérieur de la gaine. Grâce à une meilleure compréhension de ces processus, nous proposons des solutions pour optimiser le procédé de dopage. Nous avons développé une méthode de prédiction du profil de dopage en profondeur ; cette méthode a été validé par comparaison avec des profils SIMS. Le plasma peut être régulé, afin d’obtenir une distribution de dopage moins profonde dans le silicium
The aim of this work is to characterize the boron trifluoride plasma and its interaction with the materials during the ultra-shallow-junction doping process for semiconductors using a pulsed plasma doping system (PLAD). In order to measure in situ the ion energy distribution of the various ions present in the plasma, accelerated by the negative pulse and implanted into the silicon wafer, a special cathode was designed with a mass spectrometer installed in its center. The measurement of the composition of the bulk plasma ions as well as the composition of the ions provides some information on the collision processes that occur inside the sheath. Thanks to a better understanding of these processes, the doping process can be optimized. Based on the ion energy distributions measured with the mass spectrometer, the dopant depth profile can be predicted and the plasma can be tuned in order to obtain shallower dopant depth distribution in the silicon after plasma doping implantation
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Pham, Nans. "Contribution à l’étude des effets liés au transport de l’hydrogène dans les couches minces et les dispositifs à base de silicium amorphe et microcristallin." Reims, 2009. http://theses.univ-reims.fr/sciences/2009REIMS036.pdf.

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Dans cette thèse nous nous sommes intéressés à certains aspects liés au transport de l'hydrogène dans le silicium amorphe hydrogéné (a-Si:H) et microcristallin (µc-Si:H). Après avoir amélioré le dispositif expérimental dédié à la mesure de l'hydrogène effusant de a-Si:H sous éclairement, nous avons mis en évidence que, avant d'effuser, lh'ydrogène diffuse dans le matériau sous forme moléculaire, car la recombinaison a lieu au sein du matériau. De plus, bien que la quantité d'hydrogène effuséee hors de l'échantillon soit très faible, les mesures d'ellipsométrie et d'exodiffusion thermique montrent que l'éclairement modifie considérablement la distribution de l'hydrogène dans le matériau. Dans une deuxième partie nous avons observé par ellipsométrie spectroscopique la cinétique de cristallisation par transport chimique de couches de a-Si:H dopé et intrinsèque. Nous avons auinsi confirmé le caractère particulier de a-Si:H de type p, par rapport aux types i et n, du fait du bore qui ralentit la gravure et favorise la diffusion de l'hydrogène nécessaire au recuit chimique. Nous avons conçu un modèle de diffusion limitée par les pièges afin d'interpréter la sortie de l'hydrogène de l'échantillon dès que la cristallisation commence. Dans une troisième partie, nous avons étudié les phénomènes de pelage se produisant dans les couches de µc-Si:H utilisées dans la fabrication de transistors à effet de champ. Ces effets sont attribués d'une part à l'accumulation de l'hydrogène à l'interface avec le substrat et d'autre part aux contraintes mécaniques présentes aux interfaces. Nous avons mis en évidence qu'un plasma H2 prolongé sur le substrat prévenait le pelage
In this thesis, some aspects of the transport of hydrogen through hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (µc-Si:H) have been approached. After improving the experimental setup intended to the measurement of hydrogen effusing from a-Si:H under illumination, we showed that effusing hydrogen diffuses in the material as a molecule, since the recombination of atomic H occurs inside the material. Moreover, even though the small account of effused hydrogen, illumination induces substantial modifications in H configurations, as proven by both spectroscopic ellipsommetry and thermal hydrogen effusion measurement. The second part is devoted to the crystallisation kinetics of doped and intrinsic a-Si:H by chemical transport. The special feature of p-type a-Si:H, in comparison with i- and n- types due to boron effects which reduce the etching rate and enhance the H diffusion necessary to chemical annealing, has also benn confirmed. We have proposed a trap-limited diffusion model to interpret the "unusual" hydrogen evolution as soon as the growth of µc-Si:H starts. As for the third part, it focuses on the pelling-off effects occuring in µc-Si:H layers used in the production of field-effect transistors. These effets are attributed on the one hand to an accumulation of hydrogen at the substrate interface, and on the other hand, to interfacial stress. Finallu, we have pointed out that a preliminary and sustainable H-plasma on the substrate changes the hydrogen distribution within the deposited µc-Si:H layer, and prevent its pelling-off
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Guillebot, de Nerville Marie Anne. "Dépôt par activation plasma de matériaux diélectriques sur substrat semi-conducteur pour les nouvelles technologies submicroniques : Optimisation d'un réacteur industriel." Montpellier 2, 1995. http://www.theses.fr/1995MON20049.

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Desplats, Olivier. "Préparation de surfaces structurées et reprise d'épitaxie par jets moléculaires : réalisation de micro et nano structures sur GaAs." Toulouse 3, 2008. http://thesesups.ups-tlse.fr/299/.

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La structuration de surface et la reprise d'épitaxie sont des technologies clé pour le développement des (nano)dispositifs optoélectroniques avancés. Nos travaux de thèse ont visé la préparation de surfaces GaAs micro et nanostructurées pour l'épitaxie et l'étude de la croissance dirigée de boîtes quantiques InAs sur ces surfaces. La lithographie électronique a été retenue pour structurer la résine en surface et une attaque chimique pour le transfert du motif dans le semiconducteur. La décontamination de la surface par plasma micro-onde O2 : SF6 a été démontrée. Sa rugosité a été supprimée par désoxydation in-situ à basse température avec un plasma d'hydrogène. L'influence de l'orientation et de l'échelle des motifs sur l'épitaxie de GaAs a été précisée. Des boîtes quantiques d'InAs ont été réalisées sur ces surfaces recouvertes d'un puits de GaInAs et leur organisation obtenue. Cette méthode de préparation convient aussi pour l'épitaxie sélective de GaAs sur des surfaces structurées par des motifs de Si3N4
Surface patterning and epitaxial regrowth are key technologies for novel optoelectronic (nano) devices. The aim of this thesis has been to develop a preparation of GaAs micro- and nanopatterned surfaces suited for regrowth and to study the organization of InAs quantum dots on these surfaces. The patterns have been achieved by electronic lithography in a cap resist and transferred into GaAs by chemical etching. Surface decontamination by a O2: SF6 micro-wave plasma has been demonstrated. Roughening upon in situ deoxidization has been prevented thanks to a low temperature H plasma treatment. Molecular beam epitaxy on these patterned surfaces has been studied. InAs quantum dots have been grown and lateral ordering has been attained. This preparation method has been shown to be efficient for GaAs selective regrowth on Si3N4/GaAs patterned surfaces
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Noguès-Delbos, Elise. "Densification de dépôts de zircone yttriée projetés par plasma d'arc Ar-H2 et N2-H2 pour leur utilisation dans l'industrie des semi-conducteurs." Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/f9f2a754-9ac0-4af7-ba80-4c3d38c21d1b/blobholder:0/2007LIMO4047.pdf.

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Dans l’industrie des semi-conducteurs, les puces électroniques, au cours de leur processus de fabrication, peuvent être revêtues d’un dépôt CVD et/ou PVD, réalisé dans des enceintes en quartz (bell jar). Après utilisation, ces dernières, recouvertes d’un dépôt « polluant », sont nettoyées dans une solution acide. Dans le but d’augmenter la durée de vie de ces enceintes et d’espacer les nettoyages, la société Edwards les protège d’un dépôt rugueux de zircone yttriée réalisé par projection plasma. Cependant, la porosité du dépôt protecteur entraîne une infiltration de la solution chimique de nettoyage jusqu’au quartz. Non seulement, le dépôt « polluant » est décapé, mais aussi le dépôt protecteur en zircone yttriée. L’objectif de cette thèse est de densifier le dépôt de zircone yttriée afin de le rendre imperméable à la solution chimique, permettant sa réutilisation en ne décapant que le dépôt « polluant ». La rugosité du dépôt doit, toutefois, rester élevée. La densification des dépôts va se faire à partir d’une optimisation des paramètres de projection - débit massique, pourcentage d’hydrogène, distance de tir,… - de la distribution granulométrique de la poudre, de la nature du gaz plasmagène (argon ou azote) et donc de la torche utilisée. Cette optimisation des conditions de tir est effectuée via l’étude des propriétés du plasma, telles que l’enthalpie et les fluctuations de tension aux bornes de la torche, et de leurs influences sur le traitement thermique des particules en vol, la formation des lamelles lors de leur écrasement et la construction des dépôts et leurs propriétés (en particulier leur porosité, rugosité et épaisseur)
In semiconductor industry, the electronic chips, during their manufacturing process, can be covered with CVD/PVD coatings, carried out inside bell jars. After use, these quartz chambers, layered with a contaminated coating, are cleaned inside an acid solution. In order to increase their time of life and the time between two cleanings, Edwards society masks the chambers with a rough yttria partially stabilized zirconia coating made by plasma spraying process. However, the chemical cleaning solution reaches the quartz substrate through the coating porosity. So, the protected coating is etched at the same time than the contaminated coating. The aim of this research work is to increase the coating density to make it cleanable, in order to remove only the contaminated layer. Nevertheless, the coating roughness must remain high. The coating densification is obtained by optimising the plasma spray parameters (mass flow rate, hydrogen percentage, stand-off distance…), the powder size distribution, the plasma gas mixture composition (argon or nitrogen) and so the plasma torch design. This optimisation of spray conditions is determined by studying plasma properties, such as its enthalpy and its voltage fluctuations, and their influences on the in-flight particle thermal treatment, the corresponding splat formation and the coating growth and properties (especially their porosity, roughness and thickness)
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Li, Xinhao S. M. Massachusetts Institute of Technology. "Modeling the effects of surface plasmon resonance on hot electron collection in a metallic-semiconductor photonic crystal device." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/111726.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2017.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 68-72).
Metallic-semiconductor Schottky hot carrier devices have been found as a promising solution to harvest photon with energy below the bandgap of semiconductor, which is of crucial importance for realizing efficient solar energy conversion. In recent years, extensive efforts have been devoted to utilizing surface plasmon resonance to improve light absorption by creating strong light-metal interaction, which generates hot electrons through nonradiative decay. However, how surface plasmon enhances the efficiency of hot electron collection is still debatable. This thesis studies the effects of surface plasmon resonance on hot electron collection in a metallic-semiconductor photonic crystal (MSPhC) designed by our group for efficient photoelectron-chemical energy conversion. In contrast to a broadband light absorption at the range from 400 nm to 800 nm, the sub-bandgap photoresponse shows a single peak centered at 590 nm, which is identified as the surface plasmon resonant wavelength of this device. We develop a theoretical model of hot electron generation, transport and injection in this device incorporating the effects of anisotropic hot electron momentum distribution caused by surface plasmon resonance. Near resonant wavelength, surface plasmon dominates the electric field in the thin Au layer, which generates hot electrons with high enough momentum preferentially normal to the Schottky interface. Through analyzing the energy, momentum and spatial distribution of generated hot electrons, we develop a model to estimate the internal quantum efficiency (IQE) of this device. The anisotropic hot electron momentum distribution largely enhances IQE and photoresponse near the resonant wavelength. Compared with the widely used Fowler's theory of Schottky internal photoemission, our model can better predict IQE of surface plasmon assisted hot electron collection. Combined with large scale photonic design tools, this quantum-level model could be applied for tuning and enhancing photoresponse of Schottky hot carrier devices.
by Xinhao Li.
S.M.
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Books on the topic "Semiconductors – Plasma effects"

1

1934-, Pilkuhn M. H., ed. High excitation and short pulse phenomena: Proceedings of the third Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 2-6 July 1984. Amsterdam: North Holland, 1985.

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F, Lazneva Ė. Lazernai͡a︡ desorbt͡s︡ii͡a︡. Leningrad: Izd-vo Leningradskogo universiteta, 1990.

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Cheung, Kin P. Plasma charging damage. London: Springer, 2001.

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International Symposium on Plasma Process-Induced Damage (4th 1999 Monterey, Calif.). 1999 4th International Symposium on Plasma Process-Induced Damage: May 9-11, 1999, Monterey, California, USA. Edited by Dao, Leanne Thuy Lien, 1958-, Koyanagi Mitsumasa, Hook Terence, IEEE Electron Devices Society, American Vacuum Society, and Ōyō Butsuri Gakkai. Sunnyvale, CA: Northern California Chapter of the American Vacuum Society, 1999.

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International Symposium on Plasma Process-Induced Damage (8th 2003 Corbeil-Essonnes, France). 2003 8th International Symposium on Plasma- and Process-Induced Damage: April 24-25, 2003, Corbeil-Essonnes, France. Edited by Eriguchi Koji, Krishnan S, Hook Terence, IEEE Electron Devices Society, and Ōyō Butsuri Gakkai. Pisctaway, N.J: IEEE, 2003.

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Koyanagi, Mitsumasa. 2000 5th International Symposium on Plasma Process-Induced Damage: May 22-24, 2000, Santa Clara, California, USA. Santa Clara, California: Northern California Chapter of the American Vacuum Society, 2000.

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International, Symposium on Plasma Process-Induced Damage (1st 1996 Santa Clara Calif ). 1996 1st International Symposium on Plasma Process-Induced Damage: 13-14 May 1996, Santa Clara, California, USA. Sunnyvale, CA: Northern California Chapter of the American Vacuum Society, 1996.

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Terence, Hook, Eriguchi Koji, Gabriel Calvin T, American Vacuum Society, IEEE Electron Devices Society, and Ōyō Butsuri Gakkai, eds. 2002 7th International Symposium on Plasma- and Process-Induced Damage: June 5-7, 2002, Maui, Hawaii, USA. Santa Clara, California: AVS, 2002.

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International Symposium on Plasma Process-Induced Damage (3rd 1998 Honolulu, Hawaii). 1998 3rd International Symposium on Plasma Process-Induced Damage: June 4-5, 1998, Honolulu, Hawaii, USA. Edited by Nakamura Moritaka, Dao, Leanne Thuy Lien, 1953-, Hook Terence, IEEE Electron Devices Society, American Vacuum Society, and Ōyō Butsuri Gakkai. Sunnyvale, CA: Northern California Chapter of the American Vacuum Society, 1998.

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2001 6th International Symposium on Plasma- and Process-Induced Damage: May 13-15, 2001, Monterey, California, USA. Santa Clara, CA: Northern California Chapter of the American Vacuum Society, 2001.

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Book chapters on the topic "Semiconductors – Plasma effects"

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Gupta, Rita, N. Balkan, and B. K. Ridley. "Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability." In Negative Differential Resistance and Instabilities in 2-D Semiconductors, 127–39. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2822-7_8.

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Tiwari, Sandip. "Remote processes." In Semiconductor Physics, 632–48. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0019.

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This chapter discusses remote processes that influence electron transport and manifest themselves in a variety of properties of interest. Coulomb and phonon-based interactions have appeared in many discussions in the text. Coulomb interactions can be short range or long range, but phonons have been treated as a local effect. At the nanoscale, the remote aspects of these interactions can become significant. An off-equilibrium distribution of phonons, in the limit of low scattering, will lead to the breakdown of the local description of phonon-electron coupling. Phonons can drag electrons, and electrons can drag phonons. Soft phonons—high permittivity—can cause stronger electron-electron interactions. So, plasmon scattering can become significant. Remote phonon scattering too becomes important. These and other such changes are discussed, together with phonon drag’s consequences for the Seebeck effect, as illustrated through the coupled Boltzmann transport equation. The importance of the zT coefficient for characterizing thermoelectric capabilities is stressed.
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"Nano-Tech Electronic Applications." In Emerging Nanotechnology Applications in Electrical Engineering, 279–313. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-8536-8.ch010.

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This chapter contains the theories and effective parameters for developing the electronic applications by using nanotechnology techniques. This chapter sheds light on developing characterization of surface plasmon resonance (SPR) sensor, organic light emitting diode (OLED), thin-film transistors (TFTs), compact microstrip patch antenna, semiconductors, resistive memories, memory ram, chemical sensors, biosensors, and super capacitors. Furthermore, this chapter contains the detailed literature of the effects of different types and concentrations of nanoparticles for developing characterization of electronic applications. Finally, this chapter draws attention to the recommendations for investment in electronic applications by using nanotechnology techniques.
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Tiwari, Sandip. "Light interactions with semiconductors." In Semiconductor Physics, 454–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0012.

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This chapter examines how electromagnetic waves—light, photons—interact with semiconductors through coupling between the electromagnetic wave and dipoles of various kinds and analyzed via a dipole interaction Hamiltonian. Phenomena in the energy range of micro eV to several eVs are explored, stressing surface interactions, absorption, emission and luminescence. The first involves coupled plasmon interactions. Absorption and emission arise across energy and through multiple mechanisms. Free carrier processes are pronounced for low energy. Direct electron-photon interactions—a direct transition—can involve allowed transitions and forbidden transitions across the gap. Indirect transitions of both these varieties can arise in phonon-assisted processes. Oscillator strength is fleshed out. Field dependence, doping dependence and temperature dependence are analyzed, broadening the discussion to the Franz-Keldysh effect as well as dependence due to impurities, excitons, plasmons and crystal oscillations, to unravel the dielectric function and reflectivity’s behavior at high frequencies and restrahlen often observed.
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Ridley, B. K., and M. Al-Mudares. "THE EFFECT OF HOT PHONONS AND COUPLED PHONON-PLASMON MODES ON SCATTERING-INDUCED NDR IN QUANTUM WELLS." In Hot Carriers in Semiconductors, 683–85. Elsevier, 1988. http://dx.doi.org/10.1016/b978-0-08-036237-3.50088-7.

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Khmyrova, Irina. "Study of Plasma Effects in HEMT-like Structures for THz Applications by Equivalent Circuit Approach." In Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems. InTech, 2010. http://dx.doi.org/10.5772/8757.

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Eom, Sukeun, Min-woo Kong, and Kwang-seok Seo. "Development and Characterization of High-Quality HfO2/InGaAs MOS Interface." In Recent Advances in Nanophotonics - Fundamentals and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.92424.

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The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.
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Eriguchi, Koji. "Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors." In Molecular Dynamics - Studies of Synthetic and Biological Macromolecules. InTech, 2012. http://dx.doi.org/10.5772/36394.

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Conference papers on the topic "Semiconductors – Plasma effects"

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Lee, Kyung Dong, Min Gu Kang, Young Do Kim, Sung Ju Tark, Sungeun Park, Donghwan Kim, Jisoon Ihm, and Hyeonsik Cheong. "Effects of in-situ NH[sub 3] post plasma treatment on the surface passivation layer." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666328.

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Fedorov, I. A. "Exchange Effects on Electronic States in QWs with e-h Plasma in an Electric Field." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994559.

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Kim, Jae-Min, S. J. Lim, Doyoung Kim, Hyungjun Kim, Jisoon Ihm, and Hyeonsik Cheong. "The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666664.

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Hu, L. C., Y. W. Lin, C. J. Wang, T. C. Wei, C. R. Yang, C. C. Lee, J. Y. Chang, I. C. Chen, and Tomi T. Li. "Plasma diagnostics of resonance magnetic field effects on a-Si:H thin films deposition using electron cyclotron resonance plasma." In 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153464.

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Sakowicz, M., J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Köhler, G. Valušis, et al. "The Role of Gated and Ungated Plasma in THz Detection by Field Effect Transistors." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295529.

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Young, Jeffrey F., and Paul J. Kelly. "Coulomb scattering of hot electrons with electron-hole plasmas in GaAs: quantitative effects of dynamic screening (Invited Paper)." In Semiconductors '92, edited by David Yevick. SPIE, 1992. http://dx.doi.org/10.1117/12.60486.

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Kawakami, Retsuo, Masahito Niibe, Yoshitaka Nakano, and Takashi Mukai. "Effect of ultraviolet light-assisted CF4 plasma irradiation on AlGaN thin film surface." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528682.

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Crouse, David T. "Surface plasmon effects in metal-semiconductor-metal photodetectors." In Optics East, edited by Joachim Piprek. SPIE, 2004. http://dx.doi.org/10.1117/12.571350.

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Wang, Kui, Ji Hong Zhang, Yu Shan Chi, Zhi Hao Ji, Hui Yuan Pei, Yi Zhen Zhu, Quan Bo Li, and Jun Huang. "Effects of bias RF pulsing plasma in implant layer BARC etch process." In 2016 China Semiconductor Technology International Conference (CSTIC). IEEE, 2016. http://dx.doi.org/10.1109/cstic.2016.7464002.

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Kow-Ming Chang, Bwo-Ning Chen, and Shih-Ming Huang. "The effects of plasma treatment on the thermal stability of HfAlOx thin films." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422320.

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Reports on the topic "Semiconductors – Plasma effects"

1

Sanchez, Erik. Modeling of the Surface Plasmon Resonance (SPR) Effect for a Metal-Semiconductor (M-S) Junction at Elevated Temperatures. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6508.

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