Relevant bibliographies by topics / Semiconductors – Impurity distribution

Academic literature on the topic 'Semiconductors – Impurity distribution'

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Published: 4 June 2021
Last updated: 29 January 2023

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Journal articles on the topic "Semiconductors – Impurity distribution"

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Yakovlev, G. E., D. S. Frolov, and V. I. Zubkov. "Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique." Industrial laboratory. Diagnostics of materials 87, no. 1 (January 19, 2021): 35–44. http://dx.doi.org/10.26896/1028-6861-2021-87-1-35-44.

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The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor devices is impossible without a detail analysis of the processes occurring at the interfaces of heterojunctions. At the same time, the results largely depend on the purity of the starting materials and the technology of layer manufacturing. Moreover, the requirements to the composition and distribution of the impurity steadily get stringent. Therefore, the requirements regarding the methods of the impurity control and carrier distribution also become tougher both in the stage of laboratory development of the structure and in various stages of manufacturing of semiconductor devices. Electrochemical capacitance-voltage profiling is distinguished among the methods of electrical diagnostics of semiconductors by the absence of special preparation of the structures and deposition of the contacts to perform measurements, thus providing for gaining information not only about the impurity distribution but also about the distribution of free carriers. The goal of this work is to perform precise measurements of the profiles of free carrier distribution in semiconductor structures of different types, and demonstrate the measuring capabilities of a modern technique for concentration distribution diagnostics, i.e., electrochemical capacitance-voltage profiling. The method allows verification of the layer thickness in semiconductor heterostructures and provide a useful and informative feedback to technologists. To increase the resolution of the method and broad up the range of available test frequencies, a standard electrochemical profiler has been modified. Mapping data for GaAs substrate structure, the profiles of the concentration distribution of the majority charge carriers in SiC structures, GaAs structure with a p – n junction, pHEMT heterostructure, GaN heterostructure with multiple quantum wells, and in a silicon-based solar cell heterostructure are presented. The obtained results can be used to analyze the physical properties and phenomena in semiconductor devices with quantum-sized layers, as well as to improve and refine the parameters of existing electronic devices.
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E SILVA, E. A. DE ANDRADA, and I. C. DA CUNHA LIMA. "DENSITY OF STATES AND CHARGE DISTRIBUTION IN LIGHTLY DOPED AND COMPENSATED QUANTUM WELL." Modern Physics Letters B 03, no. 11 (July 20, 1989): 815–19. http://dx.doi.org/10.1142/s021798498900128x.

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In this letter we use a Semi-Classical Impurity Band Model and obtain by Monte Carlo simulation the density of states (DOS) and the impurity charge distribution inside a quantum well (QW) of Ga 1−x Al x As/GaAs . We show the existence of a Coulomb gap as has been observed in bulk semiconductors. The DOS is not very sensitive to the QW width close to the Coulomb gap, at least in the range from 1 to 4 times the Bohr radius, and shows a behavior D(E)∝|E−EF| which indicates a two-dimensional signature. We show that the neutral donors concentrate in the center of the well according to a distribution whose width and decay rate depend on the compensation and impurity concentration respectively. Those effects are expected to be observed by infra-red absorption experiments and useful in device diagnosis.
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DZHUMANOV, S., U. T. KURBANOV, and A. KURMANTAYEV. "POSSIBLE QUANTITATIVE CRITERIA FOR THE MOTT AND ANDERSON TRANSITIONS IN DOPED UNCOMPENSATED SYSTEMS." International Journal of Modern Physics B 21, no. 02 (January 20, 2007): 169–78. http://dx.doi.org/10.1142/s0217979207036552.

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Metal-insulator transitions (MITs) in doped uncompensated systems are investigated in the Mott–Hubbard and Anderson impurity models by considering the intercarrier correlation and screening effect of carriers in the same hydrogenic impurity center, the formation of the superlattices with different coordination numbers (z=6, 8 and 12) and by studying the effect of randomness in impurity distribution. We have obtained simple and quite general criteria for the Mott and Anderson transitions and used these criteria to describe quantitatively the correlation and disorder-induced MITs in doped semiconductors and high-T c cuprates. We examine the validity of the obtained criteria for the Mott and Anderson MITs in these doped systems. It is found that the newly derived criteria for the Mott MIT are well satisfied in doped semiconductors, but they cannot be used to describe the observed MITs in the hole-doped high-T c cuprates, whereas the newly derived criteria for the Anderson MIT are applicable equally to describe the MITs observed both in doped semiconductors (at weak and intermediate disorders) and in doped cuprates (at intermediate and strong disorders). The new criteria for the Anderson MIT are extended to the polaronic systems in p-type cuprates. Our results are in quantitative agreement with the existing well-established experimental data and shed more light on the different types of MITs that occur in doped uncompensated semiconductors and cuprates.
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Wei-Hua, Wang, and Zou Liang-Jian. "Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors." Chinese Physics Letters 23, no. 6 (May 30, 2006): 1588–91. http://dx.doi.org/10.1088/0256-307x/23/6/064.

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Muraguchi, Masakazu, Ryuho Nakaya, Souma Kawahara, Yoshitaka Itoh, and Tota Suko. "Investigation of features for prediction modeling of nanoscale conduction with time-dependent calculation of electron wave packet." Japanese Journal of Applied Physics 61, no. 4 (March 16, 2022): 044001. http://dx.doi.org/10.35848/1347-4065/ac45a5.

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Abstract A model to predict the electron transmission probability from the random impurity distribution in a two-dimensional nanowire system by combining the time evolution of the electron wave function and machine learning is proposed. We have shown that the intermediate state of the time evolution calculation is advantageous for efficient modeling by machine learning. The features for machine learning are extracted by analyzing the time variation of the electron density distribution using time evolution calculations. Consequently, the prediction error of the model is improved by performing machine learning based on the features. The proposed method provides a useful perspective for analyzing the motion of electrons in nanoscale semiconductors.
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Pennycook, S. J. "Electron Channeling Analysis and Z-C0ntrast Imaging of Dopants in Semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 43 (August 1985): 296–99. http://dx.doi.org/10.1017/s0424820100118369.

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The determination of dopant distribution and lattice location are key elements in the characterization of ion-implanted, thermally processed semiconductors. We present here two analytical techniques for this purpose. The first is a channeling technique for the determination of substitutional fractions of dopants or impurities in any crystal structure, and the second is a means for imaging and elemental mapping of heavy elements in light materials, even if they are in solution.Atom Location by Electron Channeling AnalysisIt has only recently been realized that the orientation dependence of characteristic x-ray emission close to a Bragg reflection, long regarded as a hindrance to accurate microanalysis, can form the basis of a powerful lattice location technique. The first studies of this kind located trace elements in layer structure minerals, where it was known that the only possible sites for the impurity lay within the layer planes A and/or B. These restraints exclude many materials and here a generalization to any crystal structure is described.
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Poklonski, N. A., S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, and N. I. Gorbachuk. "Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects." Devices and Methods of Measurements 12, no. 1 (March 19, 2021): 13–22. http://dx.doi.org/10.21122/2220-9506-2021-12-1-13-22.

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The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands, as well as to search for the possibility of their use in the Peltier element in the temperature range, when the transitions of electrons and holes from impurity atoms and/or intrinsic defects to the c- and v-bands can be neglected.For Peltier elements with electron hopping migration we propose: (i) an h-diode containing |d1)and |d2)-regions with hydrogen-like donors of two types in the charge states (0) and (+1) and compensating them hydrogen-like acceptors in the charge state (−1); (ii) a homogeneous semiconductor containing intrinsic t-defects in the charge states (−1, 0, +1), as well as ions of donors and acceptors to control the distribution of t-defects over the charge states. The band diagrams of the proposed Peltier elements in equilibrium and upon excitation of a stationary hopping electric current are analyzed.A model of the h-diode containing hydrogen-like donors of two types |d1) and |d2) with hopping migration of electrons between them for 50 % compensation by acceptors is considered. It is shown that in the case of the reverse (forward) electrical bias of the diode, the cooling (heating) of the region of the electric double layer between |d1)and |d2)-regions is possible.A Peltier element based on a semiconductor with point t-defects is considered. It is assumed that the temperature and the concentration of ions of hydrogen-like acceptors and donors are to assure all t-defects to be in the charge state (0). It is shown that in such an element it is possible to cool down the metal-semiconductor contact under a negative electric potential and to heat up the opposite contact under a positive potential.
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Portavoce, Alain, Khalid Hoummada, and Lee Chow. "Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements." Microscopy and Microanalysis 25, no. 2 (January 30, 2019): 517–23. http://dx.doi.org/10.1017/s1431927618015623.

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AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.
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Westwood, A. D. "Application of AEM to chemical and structural characterization of the AlN-Al2O3 and AlN-Al2O3-SiO2 Systems." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 318–19. http://dx.doi.org/10.1017/s0424820100137963.

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The thermal, electronic and mechanical properties of aluminum nitride (A1N) make it an attractive material to a number of technologically important areas; microelectronic packaging, high temperature semiconductors, opto-electronic and piezoelectric devices and structural ceramics. It is well established that the concentration and distribution of impurities can control the macroscopic properties of materials. A1N is a classic example, with oxygen (O) being the dominant controlling impurity. The role of O in point defect formation and its detrimental effect on thermal conductivity was first documented by Slack. Oxygen has subsequently been shown to cause the formation of two-dimensional extended defects of which two variants exist, planar and curved. Both defects have been identified as O-rich inversion domain boundaries (IDB´s) (Fig.l). Because of the controlling influence that O has on thermal conductivity, it is important to fully understand the defect structures and chemistries that exist as a result of O incorporation. A1N-A12O3 is a prototype system for understanding the role that non-stoichiometry (impurities) plays in IDB formation.
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Lei, X. L., and N. J. M. Horing. "Balance-Equation Approach to Hot-Carrier Transport in Semiconductors." International Journal of Modern Physics B 06, no. 07 (April 10, 1992): 805–936. http://dx.doi.org/10.1142/s0217979292000505.

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The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduction, including memory effects. The scattering mechanisms include impurity and phonon interactions along with dynamic nonlocal screening effects due to carrier-carrier interactions. Both linear and nonlinear resistivities are discussed in the degenerate and nondegenerate statistical regimes. Interesting phenomena such as electron cooling and thermal noise and diffusion are discussed as well. Semiconductor microstructure transport is described for both linear and nonlinear hot carrier conduction. In this connection, quasi-2D-systems, heterojunctions, and quantum well superlattices are treated with attention to steady state, transient and high frequency transport, including, for example, superlattice plasmon resonance structure. Type-II superlattice transport is reviewed as well as type-I, and electron-hole drag is treated in conjunction with negative minority electron mobility in a quantum well. Multivalley semiconductors are discussed in some detail. Furthermore, attention is also focused on the center-of-mass velocity fluctuation, Langevin-type equation and thermal noise and diffusion for microstructures and multivalley systems. A number of particularly important phenomena are examined from the balance-equation point of view, such as nonequilibrium phonons, higher order scattering effects and weak localization, hydrodynamic equations for weakly nonuniform systems, and the intracollisional field effect. Alternative formulations and interpretations of the balance-equation approach are reviewed. The distinction between this many-particle, isothermal, balance-equation theory and the noninteracting (single-particle) adiabatic transport theory is discussed to clarify issues subject to controversy in the literature. Finally, we give a brief review of recent developments in the balance-equation approach: investigation of the distribution function in balance-equation theory, improved calculations for GaAs/AlGaAs heterojunctions, extension of the balance equations to an abitrary energy band and recent work on superlattice miniband transport.
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Dissertations / Theses on the topic "Semiconductors – Impurity distribution"

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Erwin. "Electron eigenvalues and eigenfunctions for a nanochannel with a finite rectangular barrier." Virtual Press, 1994. http://liblink.bsu.edu/uhtbin/catkey/917032.

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Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The effects of size, strength and location of the impurity are discussed.In order to find the electronic transverse energy levels, wavefunctions and hopping integrals, two FORTRAN computer programs were developed. The first, called Program Data Input, writes the computational parameters to a data file. The second, Program Single Impurity, uses this data file in performing the calculations of the electronic transverse energy levels, eigenfunctions and hopping integrals.
Department of Physics and Astronomy
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Garcia, Jonathan C. "Alternate configurations for blocked impurity band detectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FGarcia.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, Dec. 2004.
Thesis Advisor(s): Nancy M. Haegel, Gamani Karunasiri. Includes bibliographical references (p. 43-45). Also available online.
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Hussain, Tahir. "Novel impurity distributions in GaAs devices by focused ion beam implantation." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241086.

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Wong-Leung, Jennifer. "The gettering of metals in silicon to defects induced by ion implantation." Phd thesis, 1997. http://hdl.handle.net/1885/145289.

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Roro, Kittessa Tolessa. "Influence of V and Mn doping on the electrical transport properties of A Cr +1.2 at.% Ga alloy." Thesis, 2008. http://hdl.handle.net/10210/1360.

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M.Sc.
Impurity resonance scattering effects are investigated in the Cr-Ga alloy system. This system has a triple point on its magnetic phase diagram where the paramagnetic (P), incommensurate (I) and commensurate (C) spin-density-wave (SDW) states co-exist. Alloying Cr with the nonmagnetic nontransitional element Ga affects the magnetic properties of Cr in a very unique way. In order to investigate the presence of resonant impurity scattering effects in binary Cr-Ga alloys, electrical resistivity measurements were carried out in the temperature range between 6 K and 85 K. The results of the investigation show: • A nonmonotonic increase in the residual resistivity of the Cr-Ga system with an increase in the Ga content, due to the presence of resonant impurity scattering of conduction electrons. • A low-temperature resistivity minimum observed in some of the Cr-Ga alloys, taken as further evidence for the presence of resonant impurity scattering effects on the conduction electrons. The impurity resonance scattering effects on the electrical resistivity of a Cr + 1.2 at.% Ga alloy, doped with V and Mn to tune the Fermi level through the impurity level, are also investigated. The investigation was complemented by thermal expansion and velocity of sound measurements in the temperature range 77 K to 450 K for the Cr + 1.2 at.% Ga alloy only. This specific Ga concentration was chosen to allow for studying resonant scattering effects in both the ISDW and CSDW phases of the system. This is possible because concentration of 1.2 at.% Ga is just above the triple point concentration. Doping with Mn to increase the electron concentration (eA) drives the alloy deeper into the CSDW phase region of the phase diagram, while doping with V, on the other hand, will drive the alloy towards the ISDW phase region. The results of the study are summarized as follows: • Two relatively sharp peaks, attributed to resonant impurity scattering effects, are observed in the curve of the residual resisitivity as a function of dopant concentration in the ISDW phase of the ternary (Cr0.988Ga0.012)1-xVx and (Cr0.988Ga0.012)1-yMny alloy systems. v • At 0 K the (Cr0.988Ga0.012)1-yMny alloy system transforms from the ISDW to the CSDW phase at y ≅ 0.0032, giving a CSDW phase for y > 0.0032. A peak is observed in the residual resistivity at about this Mn content. This peak can then either be ascribed to a jump occurring in the residual resistivity when the CSDW phase is entered from the ISDW phase or to resonant scattering effects. The conclusion is that the peak is rather related to the latter effect. • The resistivity as a function of temperature of the above two ternary alloy series show well-developed or weak minima at low temperatures for some of the samples. This is taken as further evidence of the influence of impurity resonant scattering effects on the resistivity of these alloys. • The resistivity and thermal expansion coefficient of the polycrystalline Cr0.988Ga0.012 alloy of the present study behaves anomalously close to the ISDW-CSDW phase transition temperature and warrant further investigation. The concentration-temperature magnetic phase diagram of the (Cr0.988Ga0.012)(Mn,V) alloy system was constructed from the magnetic transition temperatures obtained from electrical resistivity measurements. Theoretical analysis of the phase diagram was done using the two-band imperfect nesting model of Machida and Fujita. The results show: • A triple point at (0.21 at.% V, 225 K) where the ISDW, CSDW and P phases coexist on the magnetic phase diagram. • The curvature of all three theoretically calculated phase transition lines in the region of the triple point is of the same sign as that observed experimentally. • The theoretical fit is very good for the ISDW-P and ISDW-CSDW phase transition boundaries, while there is some discrepancy for the CSDW-P phase transition line. This may be attributed to the fact that the theory is one dimensional and that it does not include electron-hole pair breaking effects due to impurity scattering and also not effects of changes in the density of states due to alloying.
Dr. A.R.E Prinsloo Prof. H.L. Alberts
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Divekar, Prasad K. "Fourier deep level transient spectroscopy and its application to gold in silicon." Thesis, 2002. http://hdl.handle.net/1957/31712.

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A primarily software based Fourier Deep Level Transient Spectroscope (FDLTS) is built. The raw capacitance transient is acquired and digitized using capacitance meter HP4280A whereas the signal analysis is done using a customized software module. The software module calculates both the conventional DLTS spectrum and the Fourier DLTS spectrum. This home-made FDLTS set up was compared to a commercial conventional box-car DLTS system (Sula Technology's DLTS) as well as to a commercial Fourier DLTS system (Bio-rad) and it was found to be either equivalent to the commercial systems or even better in some respects. In one case, Fourier analysis using the home-made setup, led to the detection of a trap completely undetected by the commercial conventional DLTS. The FDLTS system together with the commercial conventional DLTS were used to study possible gold contamination in an industrial process. The study was accomplished by comparing conventional and Fourier DLTS spectra and corresponding calculated trap properties using Schottky barrier diodes fabricated on the suspect wafers and an intentionally gold diffused reference sample wafer. During the investigation minority carrier emission in DLTS using Schottky barrier diodes was observed. The study revealed the presence of some possible gold-like contamination which trapped minority carriers (i.e. electrons) in p type silicon.
Graduation date: 2003
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Kiger, Shanalyn. "Rutherford backscattering in ion-implanted and pulsed laser annealed Si and Ge." 1985. http://hdl.handle.net/2097/27521.

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Sheppard, Leigh Russell Materials Science &amp Engineering Faculty of Science UNSW. "Defect chemistry and charge transport in niobium-doped titanium dioxide." 2007. http://handle.unsw.edu.au/1959.4/40542.

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The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.
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Books on the topic "Semiconductors – Impurity distribution"

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Impurities in semiconductors: Solubility, migration, and interactions. Boca Raton: CRC Press, 2004.

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International Conference on Shallow Impurities in Semiconductors (5th 1992 Kobe, Japan). Shallow impurities in semiconductors: Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors : physics and control of impurities, Kobe, Japan, 5 to 8 August 1992. Edited by Taguchi Tsunemasa. Brookfield, Vt: Trans Tech Publications, 1993.

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International Conference on Shallow Impurities in Semiconductors (5th 1992 Kobe, Japan). Shallow impurities in semiconductors: Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors : "Physics and Control of Impurities", International Conference Center, Kobe, Japan, 5 to 8 August 1992. Edited by Taguchi Tsunemasa. Aedernabbsdorf, Switzerland: Trans Tech Publications, 1993.

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Berman, Lev Solomonovich. Purity control of semiconductors by the method of capacitance transient spectroscopy. St. Petersburg: "Electronic Integral Systems", 1995.

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Dreyhsig, Jörg. The multiplet problem of 3d transition metal impurities in semiconductors: General aspects and the specific properties of semiconductors doped with cobalt. Berlin: W & T Verlag, 1994.

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Orton, J. W. The electrical characterization of semiconductors: Measurement of minority carrier properties. London: Academic Press, 1990.

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S, Ashok, ed. Defect and impurity engineered semiconductors II: Symposium held April 13-17, 1998, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 1998.

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Optical absorption of impurities and defects in semiconducting crystals: Hydrogen-like centres. Heidelberg: Springer, 2010.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. CRC, 2004.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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Book chapters on the topic "Semiconductors – Impurity distribution"

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HLLIBRAND, J., and R. D. GOLD. "DETERMINATION OF THE IMPURITY DISTRIBUTION IN JUNCTION DIODES FROM CAPACITANCE-VOLTAGE MEASUREMENTS." In Semiconductor Devices: Pioneering Papers, 191–98. WORLD SCIENTIFIC, 1991. http://dx.doi.org/10.1142/9789814503464_0019.

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Akhbarifar, Sepideh. "Quantum Physical Interpretation of Thermoelectric Properties of Ruthenate Pyrochlores." In Thermoelectricity - Recent Advances, New Perspectives and Applications [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99260.

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Lead- and lead-yttrium ruthenate pyrochlores were synthesized and investigated for Seebeck coefficients, electrical- and thermal conductivity. Compounds A2B2O6.5+z with 0 ≤ z < 0.5 were defect pyrochlores and p-type conductors. The thermoelectric data were analyzed using quantum physical models to identify scattering mechanisms underlying electrical (σ) and thermal conductivity (κ) and to understand the temperature dependence of the Seebeck effect (S). In the metal-like lead ruthenates with different Pb:Ru ratios, σ (T) and the electronic thermal conductivity κe (T) were governed by ‘electron impurity scattering’, the lattice thermal conductivity κL (T) by the 3-phonon resistive process (Umklapp scattering). In the lead-yttrium ruthenate solid solutions (Pb(2-x)YxRu2O(6.5±z)), a metal–insulator transition occurred at 0.2 moles of yttrium. On the metallic side (<0.2 moles Y) ‘electron impurity scattering’ prevailed. On the semiconductor/insulator side between x = 0.2 and x = 1.0 several mechanisms were equally likely. At x > 1.5 the Mott Variable Range Hopping mechanism was active. S (T) was discussed for Pb-Y-Ru pyrochlores in terms of the effect of minority carrier excitation at lower- and a broadening of the Fermi distribution at higher temperatures. The figures of merit of all of these pyrochlores were still small (≤7.3 × 10−3).
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Capper, P., E. S. O'Keefe, C. Maxey, D. Dutton, P. Mackett, C. Butler, and I. Gale. "Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis." In Selected Topics in Group IV and II–VI Semiconductors, 104–18. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50107-8.

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Conference papers on the topic "Semiconductors – Impurity distribution"

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Nelayev, Vladislav V., G. V. Litvinovich, and Bronislav B. Sevruk. "Impurity distribution in layered semiconductor structures by means of IR nondestructive diagnostics." In International Workshop on New Approaches to High Tech Materials: Nondestructive Testing and Computer Simulations in Materials Scienc, edited by Alexander I. Melker. SPIE, 1998. http://dx.doi.org/10.1117/12.299572.

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Hirota, Jun, Shiro Takeno, Yuji Yamagishi, and Yasuo Cho. "Novel Carrier Measurement Methodology for Floating Gate of Sub-20 nm Node Flash Memory Using Scanning Nonlinear Dielectric Microscopy." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0547.

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Abstract:
Abstract The transistor structure of memory devices and other cutting-edge semiconductor devices has become extremely minute and complicated owing primarily to advances in process technology and employment of three-dimensional structures. Among the various approaches to improve the device performance and functionality, optimizing the carrier distribution is considered to be quite effective. This study focuses on scanning nonlinear dielectric microscopy (SNDM), a capacitance-based scanning probe microscopy technique. First, to evaluate SNDM's potential for high-resolution measurement, the most commonly used metal coated tip with a tip radius of 25 nm was used to measure a quite low-density impurity distribution. Then, after confirming that the SNDM's S/N ratio was sufficiently high for the smaller probe tip, an ultra-fine diamond probe tip with a nominal tip radius of lesser than 5nm as an SNDM probe tip to measure sub-20 nm node flash memory cell transistors was employed. Successful results were obtained and are reported.
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