Journal articles: 'Semiconductors; Gallium Arsenide'

1

Brodsky, Marc H. "Progress in Gallium Arsenide Semiconductors." Scientific American 262, no. 2 (February 1990): 68–75. http://dx.doi.org/10.1038/scientificamerican0290-68.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Webb, J. D., D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, M. W. Wanlass, R. Noufi, and S. M. Vernon. "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer." Applied Spectroscopy 47, no. 11 (November 1993): 1814–19. http://dx.doi.org/10.1366/0003702934066019.

Full text

Abstract:

This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

APA, Harvard, Vancouver, ISO, and other styles

3

Kushibiki, Nobuo, Masami Tsukamoto, and Tomoki Erata. "Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors." Chemical Physics Letters 129, no. 3 (August 1986): 303–5. http://dx.doi.org/10.1016/0009-2614(86)80216-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Shi, Jing, James M. Kikkawa, Roger Proksch, Tilman Schäffer, David D. Awschalom, Gilberto Medeiros-Ribeiro, and Pierre M. Petroff. "Assembly of submicrometre ferromagnets in gallium arsenide semiconductors." Nature 377, no. 6551 (October 1995): 707–10. http://dx.doi.org/10.1038/377707a0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Fang, S. F., K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka. "Gallium arsenide and other compound semiconductors on silicon." Journal of Applied Physics 68, no. 7 (October 1990): R31—R58. http://dx.doi.org/10.1063/1.346284.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

Full text

Abstract:

Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

APA, Harvard, Vancouver, ISO, and other styles

7

Ryan, John. "Semiconductors: An optical Stark effect observed in gallium arsenide." Nature 324, no. 6095 (November 1986): 303. http://dx.doi.org/10.1038/324303a0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Stern, Michael, Vladimir Umansky, and Israel Bar-Joseph. "Exciton Liquid in Coupled Quantum Wells." Science 343, no. 6166 (January 2, 2014): 55–57. http://dx.doi.org/10.1126/science.1243409.

Full text

Abstract:

Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in gallium arsenide/aluminum gallium arsenide–coupled quantum wells. Above a critical density and below a critical temperature, the photogenerated electrons and holes separate into two phases: an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons and exhibits a short-range order, which is manifested in the photoluminescence line shape.

APA, Harvard, Vancouver, ISO, and other styles

9

LI, L. "SITE-SPECIFIC SURFACE CHEMISTRY OF GaAs (001)." Surface Review and Letters 07, no. 05n06 (October 2000): 625–29. http://dx.doi.org/10.1142/s0218625x00000786.

Full text

Abstract:

In this article, we summarize our studies of the surface chemistry of gallium arsenide as it pertains to the metal organic chemical vapor deposition of compound semiconductors. It has been found by scanning tunneling microscopy and vibrational spectroscopy that the adsorption of reactant molecules on reconstruted GaAs (001) surfaces is "site-specific." The adsorption sites on the semiconductor surface are revealed by the vibrational spectrum of adsorbed hydrogen. Studies of arsine adsorption have shown that it dissociatively adsorbs only on gallium sites and transfers hydrogen to the neighboring As atom. Studies of carbon doping with carbon tetrachloride have shown that adsorbed chlorine attacks the exposed gallium and generates volatile GaCl x species. The site-specific nature of this reaction leads to a dramatic change in the film morphology, with the formation of etch pits primarily distributed along the step edges.

APA, Harvard, Vancouver, ISO, and other styles

10

Hadi, Walid A., Reddiprasad Cheekoori, Michael S. Shur, and Stephen K. O’Leary. "Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride." Journal of Materials Science: Materials in Electronics 24, no. 2 (August 1, 2012): 807–13. http://dx.doi.org/10.1007/s10854-012-0818-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Chebotarev, S. N., V. A. Irkha, and Adnan A. A. Mohamed. "Low-Energy Ion Technique for Semiconductor Surface Preparation." Solid State Phenomena 284 (October 2018): 198–203. http://dx.doi.org/10.4028/www.scientific.net/ssp.284.198.

Full text

Abstract:

We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

APA, Harvard, Vancouver, ISO, and other styles

12

Murakami, Masanori. "Development of refractory ohmic contact materials for gallium arsenide compound semiconductors." Science and Technology of Advanced Materials 3, no. 1 (January 2002): 1–27. http://dx.doi.org/10.1016/s1468-6996(01)00150-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Omura, Minoru, Miyuki Hirata, Akiyo Tanaka, Mangen Zhao, Yuji Makita, Naohide Inoue, Kaoru Gotoh, and Noburu Ishinishi. "Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters." Toxicology Letters 89, no. 2 (December 1996): 123–29. http://dx.doi.org/10.1016/s0378-4274(96)03796-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

Full text

Abstract:

The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.

APA, Harvard, Vancouver, ISO, and other styles

15

Williams, J. S., Y. Chen, J. Wong-Leung, A. Kerr, and M. V. Swain. "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters." Journal of Materials Research 14, no. 6 (June 1999): 2338–43. http://dx.doi.org/10.1557/jmr.1999.0310.

Full text

Abstract:

Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation pressures and does not appear to undergo phase transformation on loading and unloading. Indentation of compound semiconductors is also studied and the load/unload behavior at room temperature is quite different from that of silicon. Both gallium arsenide and indium phosphide, for example, undergo slip-induced plasticity above a critical load.

APA, Harvard, Vancouver, ISO, and other styles

16

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, Cristian Porneala, Xiangyang Song, Jie Fu, and Rouzbeh Sarrafi. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

Full text

Abstract:

Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this paper we will discuss some of the recent laser scribing/dicing techniques and how adequate selection of laser parameters and beam delivery optics allows for a high quality high throughput singulation process for the various materials listed above.

APA, Harvard, Vancouver, ISO, and other styles

17

Жуков, Н. Д., А. И. Михайлов, and Д. С. Мосияш. "О механизме и особенностях полевой эмиссии в полупроводниках." Физика и техника полупроводников 53, no. 3 (2019): 340. http://dx.doi.org/10.21883/ftp.2019.03.47285.8612.

Full text

Abstract:

AbstractThe field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is investigated by scanning tunneling microscopy. From the correspondence of the functional dependence of the I – V characteristic to the theory, the emission mechanism is determined as direct tunneling through a depleted or enriched subsurface layer at the voltages V < 1 V and the tunneling emission from the surface electronic states at the voltages V > 1 V. A field-emission threshold of (1–5) × 10^6 V/cm is obtained, which is significantly lower than the values for metals and carbon. The determining factors of this emission mechanism are the Schottky effect, the localization and size quantization of “light” electrons in the surface area of III–V semiconductors, and the presence of a subsurface depletion layer in silicon. According to the data obtained for the values of the field-emission threshold, indium antimonide in the form of submicron grain particles is the most efficient field emitter.

APA, Harvard, Vancouver, ISO, and other styles

18

Cowley, Alan H., and Richard A. Jones. "Single-Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors." Angewandte Chemie International Edition in English 28, no. 9 (September 1989): 1208–15. http://dx.doi.org/10.1002/anie.198912081.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Moulins, Anthony, Roberto Dugnani, and Ricardo J. Zednik. "Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography." Engineering Failure Analysis 123 (May 2021): 105313. http://dx.doi.org/10.1016/j.engfailanal.2021.105313.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Богацкая, А. В., Н. В. Кленов, П. М. Никифорова, А. М. Попов, and А. Е. Щеголев. "Резонансное болометрическое детектирование широкополосных сигналов терагерцевого диапазона частот." Письма в журнал технической физики 47, no. 17 (2021): 50. http://dx.doi.org/10.21883/pjtf.2021.17.51388.18850.

Full text

Abstract:

We discuss the detection of broadband radiation in the terahertz frequency range by a bolometric method using heterostructures consisting of a sequence of conducting and dielectric layers of doped and undoped semiconductors (gallium arsenide, germanium). This structure forms a photonic crystal with allowed and forbidden bands (absorption and transmission ranges). By selecting the thicknesses of the conductive and non-conductive layers and the doping levels, it is possible to form spectral intervals of effective absorption, which allows detecting pulses in the frequency range >10^12 Hz with a spectral width of the order of the carrier frequency.

APA, Harvard, Vancouver, ISO, and other styles

21

Ivanda, M., I. Hartmann, and W. Kiefer. "Boson peak in the Raman spectra of amorphous gallium arsenide: Generalization to amorphous tetrahedral semiconductors." Physical Review B 51, no. 3 (January 15, 1995): 1567–74. http://dx.doi.org/10.1103/physrevb.51.1567.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Bakkar, Ashraf. "Electrochemical Synthesis of Silicon and Gallium Arsenide Photovoltaic Thin Films: A Critical Review and a Novel Approach." Materials Science Forum 1008 (August 2020): 84–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1008.84.

Full text

Abstract:

This paper presents, firstly, an overview of results arisen worldwide on semiconductive thin films used in photovoltaic (PV) cells as a function of time and efficiency. Secondly, the paper demonstrates the electrodeposition of silicon and gallium arsenide films suggested for PV cells, with a focus on electrodeposition from ionic liquids. Ionic liquids, due to their wide electrochemical window, are used for the electrodeposition of elements and compounds impossible to be electrodeposited from aqueous solutions. Finally, a new approach, referred to a recent patent by the author, is illustrated to facilitate the practical electrodeposition of semiconductors from ionic liquids that can be suggested for industrial applications.

APA, Harvard, Vancouver, ISO, and other styles

23

Sareen, Rob. "Semiconductor X-Ray Detectors." Microscopy Today 6, no. 6 (August 1998): 8–12. http://dx.doi.org/10.1017/s1551929500068152.

Full text

Abstract:

Detection of characteristic x-rays is a fascinating and challenging subject. From its early beginnings with gas proportional counters it has evolved, like many branches of technology, into the use of a variety of semiconductors.The lithium compensated silicon detector [Si(Li)] has been the predominant measuring tool over the last two decades, in the last five years, increasing numbers of high purity germanium detectors (HPG) have appeared and more recently a plethora of new materials and concepts are seeing a successful introduction. Among these newer materials are compound semiconductors like mercuric iodide, cadmium telluride, cadmium zinc telluride, gallium arsenide, lead iodide, indium phosphide and diamond. Among the new concepts are Bolometers, Transition Edge Detectors, Drift Detectors, PIN Diodes, CCD arrays and PN CCD arrays.

APA, Harvard, Vancouver, ISO, and other styles

24

Nan, Junyi, Min Li, Ling Zhang, Shuai Yuan, Boqu He, and Heping Zeng. "Terahertz and Photoelectron Emission from Nanoporous Gold Films on Semiconductors." Nanomaterials 9, no. 3 (March 12, 2019): 419. http://dx.doi.org/10.3390/nano9030419.

Full text

Abstract:

Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO2 substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates.

APA, Harvard, Vancouver, ISO, and other styles

25

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (February 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

Full text

Abstract:

The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.

APA, Harvard, Vancouver, ISO, and other styles

26

Rorison, J. M., and D. C. Herbert. "Electron-electron interaction in semiconductors with application to hot-electron transistors in silicon and gallium arsenide." Journal of Physics C: Solid State Physics 19, no. 21 (July 30, 1986): 3991–4010. http://dx.doi.org/10.1088/0022-3719/19/21/006.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

COWLEY, A. H. "ChemInform Abstract: Organometallic Chemical Vapor Deposition of Gallium Arsenide and Related Semiconductors Using Novel Organometallic Precursors." ChemInform 22, no. 52 (August 22, 2010): no. http://dx.doi.org/10.1002/chin.199152326.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

ROBINSON, A. L. "A Silicon Solution for Gallium Arsenide IC's: Epitaxial growth of crystalline gallium arsenide layers on silicon wafers could combine the best properties of both semiconductors in future high-speed microelectronic chips." Science 232, no. 4752 (May 16, 1986): 826–28. http://dx.doi.org/10.1126/science.232.4752.826.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Braun, Robert, Nora Schönberger, Svenja Vinke, Franziska Lederer, Jörn Kalinowski, and Katrin Pollmann. "Application of Next Generation Sequencing (NGS) in Phage Displayed Peptide Selection to Support the Identification of Arsenic-Binding Motifs." Viruses 12, no. 12 (November 27, 2020): 1360. http://dx.doi.org/10.3390/v12121360.

Full text

Abstract:

Next generation sequencing (NGS) in combination with phage surface display (PSD) are powerful tools in the newly equipped molecular biology toolbox for the identification of specific target binding biomolecules. Application of PSD led to the discovery of manifold ligands in clinical and material research. However, limitations of traditional phage display hinder the identification process. Growth-based library biases and target-unrelated peptides often result in the dominance of parasitic sequences and the collapse of library diversity. This study describes the effective enrichment of specific peptide motifs potentially binding to arsenic as proof-of-concept using the combination of PSD and NGS. Arsenic is an environmental toxin, which is applied in various semiconductors as gallium arsenide and selective recovery of this element is crucial for recycling and remediation. The development of biomolecules as specific arsenic-binding sorbents is a new approach for its recovery. Usage of NGS for all biopanning fractions allowed for evaluation of motif enrichment, in-depth insight into the selection process and the discrimination of biopanning artefacts, e.g., the amplification-induced library-wide reduction in hydrophobic amino acid proportion. Application of bioinformatics tools led to the identification of an SxHS and a carboxy-terminal QxQ motif, which are potentially involved in the binding of arsenic. To the best of our knowledge, this is the first report of PSD combined with NGS of all relevant biopanning fractions.

APA, Harvard, Vancouver, ISO, and other styles

30

Aktik, C., J. Beerens, S. Blain, and A. Bsiesy. "Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 893–97. http://dx.doi.org/10.1139/p92-141.

Full text

Abstract:

The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical reactor that was developed by the authors employs conventional precursors such as trimethylgallium and arsine. By carefully choosing the growth parameters, we were able to grow high-quality GaAs epilayers with good surface morphology at temperatures as low as 510 °C. The carbon incorporation is shown to decrease with decreasing growth temperature without deterioration of the film quality. By carefully controlling the purity of the sources and the gas flow dynamics, we reduced the deep level impurity concentration and obtained reproducible n-type material with residual net donor concentration of 4.4 × 1014 cm−3 and mobility of 92 000 cm2 V−1 s−1 at 77 K.

APA, Harvard, Vancouver, ISO, and other styles

31

Yoon, Jongseung. "III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics." MRS Advances 2, no. 30 (2017): 1591–96. http://dx.doi.org/10.1557/adv.2017.139.

Full text

Abstract:

ABSTRACTDue to their highly favorable materials properties such as direct bandgap, appropriate bandgap energy against solar spectrum, and ability to form multiple junctions, epitaxially grown III-V compound semiconductors such as gallium arsenide have provided unmatched performance over silicon in solar energy harvesting. However, their large-scale deployment in terrestrial photovoltaics remains as a daunting challenge mainly due to the high cost of growing device-quality epitaxial materials. In this regard, releasable multilayer epitaxial growth in conjunction with printing-based deterministic materials assemblies represents a promising approach that can overcome this challenge but also create novel engineering designs and device functionalities, each with significant practical values in photovoltaic technologies. This article will provide an overview of recent advances in materials design, fabrication concept, and nanophotonic light management of multilayer-grown nanomembrane-based GaAs solar cells aiming for high performance, cost-efficient platforms of III-V photovoltaics.

APA, Harvard, Vancouver, ISO, and other styles

32

Oates, W. A., and H. Wenzl. "Temperature-chemical potential diagrams for the representation of defect and phase equilibria in compound semiconductors—application to gallium arsenide." Journal of Physics and Chemistry of Solids 49, no. 11 (January 1988): 1363–71. http://dx.doi.org/10.1016/0022-3697(88)90220-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Gogotsi, Yury G., Vladislav Domnich, Sergey N. Dub, Andreas Kailer, and Klaus G. Nickel. "Cyclic Nanoindentation and Raman Microspectroscopy Study of Phase Transformations in Semiconductors." Journal of Materials Research 15, no. 4 (April 2000): 871–79. http://dx.doi.org/10.1557/jmr.2000.0124.

Full text

Abstract:

This paper supplies new interpretation of nanoindentation data for silicon, germanium, and gallium arsenide based on Raman microanalysis of indentations. For the first time, Raman microspectroscopy analysis of semiconductors within nanoindentations is reported. The given analysis of the load-displacement curves shows that depth-sensing indentation can be used as a tool for identification of pressure-induced phase transformations. Volume change upon reverse phase transformation of metallic phases results either in a pop-out (or a kink-back) or in a slope change (elbow) of the unloading part of the load-displacement curve. Broad and asymmetric hysteresis loops of changing width, as well as changing slope of the elastic part of the loading curve in cyclic indentation can be used for confirmation of a phase transformation during indentation. Metallization pressure can be determined as average contact pressure (Meyer's hardness) for the yield point on the loading part of the load-displacement curve. The pressure of the reverse transformation of the metallic phase can be measured from pop-out or elbow on the unloading part of the diagram. For materials with phase transformations less pronounced than in Si, replotting of the loaddisplacement curves as average contact pressure versus relative indentation depth is required to determine the transformation pressures and/or improve the accuracy of data interpretation.

APA, Harvard, Vancouver, ISO, and other styles

34

Poklonski, N. A., A. N. Dzeraviaha, and S. A. Vyrko. "Localization by an external magnetic field of electrons on the ions of hydrogen-like donors in non-degenerate semiconductors." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 56, no. 2 (July 8, 2020): 239–52. http://dx.doi.org/10.29235/1561-2430-2020-56-2-239-252.

Full text

Abstract:

In the quasi-classical approximation of quantum mechanics a model for the localization of conduction electrons on the ions of hydrogen-like donors in an external magnetic field was developed. The thermal ionization energy of donors in lightly doped and moderately compensated crystals of gallium arsenide and indium antimonide of n-type was calculated depending on the induction of the external magnetic field. In contrast to the known theoretical works (which use variational methods for solving the Schrödinger equation), a simple analytical expression is proposed for the ionization energy of the donor in the magnetic field, which quantitatively agrees with the known experimental data. It is shown that the magnitude of the magnetic field induced by the orbital motion of the electron around the ion core of the donor is negligible compared to the external field and does not contribute to the ionization energy of donors.

APA, Harvard, Vancouver, ISO, and other styles

35

Rieger, M., P. Kocevar, P. Lugli, P. Bordone, L. Reggiani, and S. M. Goodnick. "Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. II. Non-Ohmic transport inn-type gallium arsenide." Physical Review B 39, no. 11 (April 15, 1989): 7866–75. http://dx.doi.org/10.1103/physrevb.39.7866.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Poklonski, Nikolai A., Sergey A. Vyrko, and Aliaksandr N. Dzeraviaha. "Thermal ionization energy of hydrogen-like impurities in semiconductor materials." Journal of the Belarusian State University. Physics, no. 2 (June 4, 2020): 28–41. http://dx.doi.org/10.33581/2520-2243-2020-2-28-41.

Full text

Abstract:

In the work the dependence of the thermal ionization energy of hydrogen-like donors and acceptors on their concentration in n- and p-type semiconductors is analyzed analytically and numerically. The impurity concentrations and temperatures at which the semiconductors are on the insulator side of the concentration insulator – metal phase transition (Mott transition) are considered. It is assumed that impurities in the crystal are distributed randomly (according to Poisson), and their energy levels are distributed normally (according to Gauss). In the quasi-classical approximation, it is shown, for the first time, that the decrease in the ionization energy of impurities mainly occurs due to the joint manifestation of two reasons. Firstly, from the excited states of electrically neutral impurities, a quasicontinuous band of allowed energy values is formed for c-band electrons in an n-type crystal (or for v-band holes in a p-type crystal). This reduces the energy required for the thermally activated transition of electron from the donor to the c-band (for the transition of the hole from the acceptor to the v-band). Secondly, from the ground (unexcited) states of impurities a classical impurity band is formed, the width of which at low temperatures is determined only by the concentration of impurity ions. In moderately compensated semiconductors (when the ratio of the concentration of minority impurities to the concentration of majority impurities is less than 50 %) the Fermi level is located closer to the edge of the band of allowed energy values than the middle of the impurity band, that issue reduces thermal ionization energy of impurities from states in the vicinity of the Fermi level (transition of electron from a donor to the c-band, or hole from an acceptor to the v-band). Previously, these two causes of decrease in the thermal ionization energy due to increase in the concentration of impurities were considered separately. The results of calculations according to the proposed formulas are quantitatively agree with the known experimental data for a number of semiconductor materials (germanium, silicon, diamond, gallium arsenide and phosphide, silicon carbide, zinc selenide) with a moderate compensation ratio.

APA, Harvard, Vancouver, ISO, and other styles

37

Pereira, Maria Cecília Barbosa, and Clóves Gonçalves Rodrigues. "Comparativo da mobilidade eletrônica do arseneto de gálio com outros semicondutores / Comparison of the electronic mobility of gallium arsenide with other semiconductors." Brazilian Journal of Business 3, no. 2 (June 2, 2021): 1853–60. http://dx.doi.org/10.34140/bjbv3n2-037.

Full text

Abstract:

Neste trabalho inicialmente foi discutida a importância dos materiais semicondutores e algumas de suas características. Em seguida foi utilizada uma consagrada equação diferencial, obtida por meio de uma teoria cinética quântica não linear, para determinar a mobilidade eletrônica do semicondutor arseneto de gálio e o resultado foi comparado com a mobilidade de outros semicondutores conhecidos. Foi possível concluir que o arseneto de gálio possui uma mobilidade muito maior que os demais semicondutores, o que permite uma operação muito mais rápida em dispositivos eletrônicos.

APA, Harvard, Vancouver, ISO, and other styles

38

Mukhokosi, Emma P., Gollakota V. S. Manohar, Tadaaki Nagao, Saluru B. Krupanidhi, and Karuna K. Nanda. "Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review." Micromachines 11, no. 8 (July 31, 2020): 750. http://dx.doi.org/10.3390/mi11080750.

Full text

Abstract:

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

APA, Harvard, Vancouver, ISO, and other styles

39

Chin, G. Y. "Views on an Electronic Materials Education." MRS Bulletin 12, no. 4 (June 1987): 47–48. http://dx.doi.org/10.1557/s0883769400067804.

Full text

Abstract:

Electronic materials constitutes a sub-field of materials. Therefore the issues raised concerning an electronic materials education must necessarily be viewed in the broader context of a comprehensive materials education. Yet electronic materials do differ from other subfields in several ways.First, unlike the traditional metals, ceramics and polymers, which are defined primarily by chemical composition, electronic materials are defined by functions, i.e., they are used in devices that provide electronic functions. As such, electronic materials encompass metals, ceramics, and polymers as well as semiconductors.Second, workers employed in electronic materials industries come from a diverse set of academic disciplines. They are physicists, chemists, chemical engineers, electrical engineers, and mechanical engineers as well as metallurgists, ceramists, and materials science and engineering (MSE) graduates. Thus activities in the electronic materials industries represent an extreme case of interdisciplinary activity which is characteristic of MSE.Third, the electronic materials industries play a dominant role in world economy today and the technology is changing at a dizzying pace. Thus issues in education in electronic materials become more challenging than other subfields and may require fresh and nontraditional approaches.When speaking of electronic materials, one generally thinks of semiconductors, such as silicon and more recently gallium arsenide, that are used in microelectronic devices.

APA, Harvard, Vancouver, ISO, and other styles

40

Chen, Wei Ting, Yung Chuan Chu, Jian Ming Wei, Lung Chang Tsai, Fang Chang Tsai, Chun Ping Lin, and Chi Min Shu. "Gallium and Arsenic Recovery from Waste Gallium Arsenide by Wet Refined Methods." Advanced Materials Research 194-196 (February 2011): 2115–18. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2115.

Full text

Abstract:

This study was focused on the recovery of gallium arsenide (GaAs) from semiconductor fabrication sludge. Wet refined methods were applied to recover gallium (Ga) including acid leaching, purified isolation, electrolysis, and coagulation. The result showed that leaching Ga with nitric acid (HNO3) was more efficient than with sulfuric acid (H2SO4). GaAs could be leached with 4 N HNO3 to obtain 100% Ga+ and arsenic (As—). The pH was adjusted with sodium hydroxide (NaOH). Then, the solution was extracted by di(2-ethylhexyl) phosphoric acid (D2EHPA) and was back extracted by H2SO4. In this way, Ga extraction efficiency was 80%. At the end of the process, electrolysis was applied to recover Ga. The resulting electrolysis efficiency with nickel-copper was only 56% and its purity was 92%. To further increase the recovery of Ga, the leaching solution was adjusted to alkaline solution and was then electrolyzed with platinum-stainless steel. In this way, recovery and purity could be as high as 90% and 94%, respectively. The removal of arsenic was 86% when the leaching solution was added with ferrous sulfate heptahydrate (Fe2(SO4)3‧xH2O) to form iron arsenate (AsFeO4).

APA, Harvard, Vancouver, ISO, and other styles

41

Akimov, Ilya A., G. V. Astakhov, R. I. Dzhioev, K. V. Kavokin, V. I. Korenev, Y. G. Kusrayev, D. R. Yakovlev, M. Bayer, and L. W. Molenkamp. "Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms." Solid State Phenomena 168-169 (December 2010): 47–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.47.

Full text

Abstract:

The GaAs doped with donors manifests long times of spin relaxation, while in the case of acceptors (or magnetic impurities) spin relaxation rate increases markedly, in accordance with theoretical predictions. From the practical point of view, this situation is unfavorable, since the devices based on spin degrees of freedom require long times of the spin memory. Therefore semiconductors such as p-GaAs were not considered as promising materials for spintronics. In the present work this conclusion is refuted by means of investigation of the spin dynamics of electrons in epitaxial layers of gallium arsenide doped with Mn impurities. In spite of the expectations, we have discovered the suppression of the spin relaxation of electrons in GaAs:Mn by two orders of magnitude. This effect is a consequence of compensation of the hole and manganese effective magnetic fields due to the antiferromagnetic interaction. The analogous results obtained for the case of GaAs quantum well doped with Mn [R. C. Myers, et al., Nature Materials 7, 203 (2008)] were interpreted as the result of the spin precession of magnetic acceptors rather than electrons. Through separate measurements of g-factor by means of time resolved spectroscopy it has been proved that long times of spin relaxation in p-GaAs:Mn relate to electrons and not to magnetic acceptors. The oscillation frequency of the angle of Kerr rotation depends linearly on the magnetic field and complies with g=0.46±0.02, i.e. the electronic g-factor.

APA, Harvard, Vancouver, ISO, and other styles

42

Glass, J. T., B. A. Fox, D. L. Dreifus, and B. R. Stoner. "Diamond for Electronics: Future Prospects of Diamond SAW Devices." MRS Bulletin 23, no. 9 (September 1998): 49–55. http://dx.doi.org/10.1557/s0883769400029377.

Full text

Abstract:

From a commercialization standpoint, electronic applications have been particularly elusive for diamond. Market estimates of $560 million per year by the year 2000 indicate the original enthusiasm in this area. Now such projections seem unreasonably optimistic, and even a niche commercial application in the area of electronics would be considered a success. However when taken in a broader context, this extended time frame for commercialization is not at all unusual for new technologies, and many new advances have continued to bolster the enthusiasm of diamond electronics research groups. Diamond has such an extensive list of exceptional properties that it continues to be a candidate for numerous electronic applications from heat spreaders to detectors to microvacuum tubes.A variety of theoretical calculations established diamond's potential in the early years of CVD-diamond research. As shown in Table I, figures of merit indicated that diamond's potential far exceeded the potential of more common semiconductors such as silicon and gallium arsenide for certain applications. Typically these applications revolved around high power or high temperature. However more accurate assessments of diamond's capability after further development uncovered several issues with many electronic applications of interest: (1) n-Type doping: Although scattered reports of n-type doping have been made a high-quality, low-resistance n-type material is not available, limiting the potential applications for diamond.(2) Deep activation of p-type carriers: At reasonable dopant levels, the activation energy for p-type carriers is approximately 0.3 eV, causing diamond to be highly resistive and sensitive to temperature variations at normal operating temperatures.

APA, Harvard, Vancouver, ISO, and other styles

43

Nguyen, Chi H., Chao Zeng, Scott Boitano, Jim A. Field, and Reyes Sierra-Alvarez. "Cytotoxicity Assessment of Gallium- and Indium-Based Nanoparticles Toward Human Bronchial Epithelial Cells Using an Impedance-Based Real-Time Cell Analyzer." International Journal of Toxicology 39, no. 3 (March 31, 2020): 218–31. http://dx.doi.org/10.1177/1091581820914255.

Full text

Abstract:

The semiconductor manufacturing sector plans to introduce III/V film structures (eg, gallium arsenide (GaAs), indium arsenide (InAs) onto silicon wafers due to their high electron mobility and low power consumption. Aqueous solutions generated during chemical and mechanical planarization of silicon wafers can contain a mixture of metal oxide nanoparticles (NPs) and soluble indium, gallium, and arsenic. In this work, the cytotoxicity induced by Ga- and In-based NPs (GaAs, InAs, Ga2O3, In2O3) and soluble III-V salts on human bronchial epithelial cells (16HBE14o-) was evaluated using a cell impedance real-time cell analysis (RTCA) system. The RTCA system provided inhibition data at different concentrations for multiple time points, for example, GaAs (25 mg/L) caused 60% inhibition after 8 hours of exposure and 100% growth inhibition after 24 hours. Direct testing of As(III) and As(V) demonstrated significant cytotoxicity with 50% growth inhibition concentrations after 16-hour exposure (IC50) of 2.4 and 4.5 mg/L, respectively. Cell signaling with rapid rise and decrease in signal was unique to arsenic cytotoxicity, a precursor of strong cytotoxicity over the longer term. In contrast with arsenic, soluble gallium(III) and indium(III) were less toxic. Whereas the oxide NPs caused low cytotoxicity, the arsenide compounds were highly inhibitory (IC50 of GaAs and InAs = 6.2 and 68 mg/L, respectively). Dissolution experiments over 7 days revealed that arsenic was fully leached from GaAs NPs, whereas only 10% of the arsenic was leached out of InAs NPs. These results indicate that the cytotoxicity of GaAs and InAs NPs is largely due to the dissolution of toxic arsenic species.

APA, Harvard, Vancouver, ISO, and other styles

44

D. M, Okpaga. "Investigating the Impacts of Temperature on the Electronic Conductivity of Si AND GaAs." International Journal for Research in Applied Science and Engineering Technology 9, no. 8 (August 31, 2021): 2807–13. http://dx.doi.org/10.22214/ijraset.2021.37861.

Full text

Abstract:

Abstract: This work explains the impacts of temperature on the electronic conductivity of silicon and gallium arsenide. Illustrations of how conductivity varies at different temperatures were depicted using equations and graphs. The effective use of semiconductor materials depends on the proper fabrication of the material about its temperature dependence. Also, the analysis of the variation of electronic conductivity in both silicon and that of gallium arsenide with a small band gap is performed towards analyzing the impacts of this on silicon and gallium arsenide. Keywords: Temperature, Silicon, Gallium Arsenide, Conductivity, Variation.

APA, Harvard, Vancouver, ISO, and other styles

45

Chen, Wei-Sheng, Ko-Wei Tien, Li-Pang Wang, Cheng-Han Lee, and Yi-Fan Chung. "Recovery of Gallium from Simulated GaAs Waste Etching Solutions by Solvent Extraction." Sustainability 12, no. 5 (February 27, 2020): 1765. http://dx.doi.org/10.3390/su12051765.

Full text

Abstract:

Gallium arsenide is used in semiconductor industries worldwide. Numerous waste etching solutions are produced during the processes of GaAs wafer production. Therefore, a complete and eco-friendly technology should be established to recover gallium as a gallium chloride solution and remove arsenic ion from waste GaAs etching solution. In this study, the gallium trichloride and arsenic trisulfide powders were dissolved in ammonia solutions to prepare the simulated solutions, and the pH value was adjusted to pH 2 by nitric acid. In the extraction step, the GaAs etching solutions were extracted using 0.5 M Cyanex 272 solutions in kerosene at pH 2 and 0.1 O/A ratio for 5 min. The extraction efficiency attained 77.4%, which had an optimal ratio of concentration, and the four steps extraction efficiency attained 99.5%. After extraction, iron sulfate heptahydrates were added into the raffinate, and the arsenic ions were precipitated. The removed rate attained 99.9% when the Fe/As ratio was 10. In the stripping step, the organic phase was stripped with 0.5 M hydrochloric acid at 1 O/A ratio for 3 min, and 97.5% gallium was stripped. Finally, the purity of gallium chloride solution was 99.95% and the gallium was seven times the concentration of the etching solutions.

APA, Harvard, Vancouver, ISO, and other styles

46

Novosyadlyi, S. P., and V. S. Huzik. "Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS." Фізика і хімія твердого тіла 16, no. 3 (September 15, 2015): 599–605. http://dx.doi.org/10.15330/pcss.16.3.599-605.

Full text

Abstract:

Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).

APA, Harvard, Vancouver, ISO, and other styles

47

Fetisov, Leonid, Dmitri Chashin, Dmitri Saveliev, Daria Plekhanova, Ludmila Makarova, and Alexandr Stognii. "Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures." EPJ Web of Conferences 185 (2018): 07005. http://dx.doi.org/10.1051/epjconf/201818507005.

Full text

Abstract:

The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.

APA, Harvard, Vancouver, ISO, and other styles

48

Mcghee, Laurence, Irene Nicol, Robert D. Peacock, Max I. Robertson, Paul R. Stevenson, and John M. Winfield. "Halogen etching of group 13–15 (3–5) semiconductors and its relevance to chemical–mechanical polishing. The reactions of dibromine, dichlorine and sodium hypochlorite with gallium arsenide and related materials." Journal of Materials Chemistry 7, no. 12 (1997): 2421–26. http://dx.doi.org/10.1039/a706242g.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

SPINARDI, GRAHAM. "The limits to ‘spin-off’: UK defence R & D and the development of gallium arsenide technology." British Journal for the History of Science 45, no. 1 (October 20, 2011): 97–121. http://dx.doi.org/10.1017/s000708741100063x.

Full text

Abstract:

AbstractUK defence R & D played a leading role in the development of gallium arsenide and other III–V semiconductor materials. Often touted as the semiconductor of the future because of its potential for high-speed computing, gallium arsenide had unique properties compared to silicon that made it attractive for military applications. Some consumer applications were also developed, and these eventually became significant with its use in mobile phone handsets in the mid-1990s. However, despite the apparent advantage of close links to the defence establishments and early access to expertise in III–V technologies, UK companies had limited success in these civil markets, preferring instead to focus on defence procurement.

APA, Harvard, Vancouver, ISO, and other styles

50

Drygaś, Mariusz, Piotr Jeleń, Marta Radecka, and Jerzy F. Janik. "Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN." RSC Advances 6, no. 47 (2016): 41074–86. http://dx.doi.org/10.1039/c6ra05706c.

Full text

Abstract:

Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH₃ at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Semiconductors; Gallium Arsenide'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles