Books on the topic 'Semiconductors; Gallium Arsenide'

Properties of aluminum gallium arsenide. London, United Kingdom: The Institution of Engineering and Technology, 2006.

Dave, Prochnow, ed. Experiments in gallium arsenide technology. Blue Ridge Summit, PA: Tab Books, 1988.

Gallium arsenide digital circuits. Boston: Kluwer Academic Publishers, 1990.

International Symposium on Gallium Arsenide and Related Compounds (18th 1991 Seattle, Wash.). Gallium arsenide and related compounds 1991: Proceedings of the eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9-12 September 1991. Bristol [England]: Institute of Physics, 1992.

E, Butner Steven, ed. Gallium arsenide digital integrated circuit design. New York: McGraw-Hill, 1990.

Long, Stephen I. Gallium arsenide digital integrated circuit design. New York: McGraw-Hill, 1990.

Williams, Ralph. Modern GaAs processing methods. 2nd ed. Boston: Artech House, 1990.

GaAs devices and circuits. New York: Plenum Press, 1987.

International Symposium on Gallium Arsenide and Related Compounds (12th 1985 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1985: Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September, 1985. Bristol: Published on behalf of the Institute of Physics by Hilger, 1986.

Kostylev, Sergeĭ Aleksandrovich. I͡A︡vlenii͡a︡ tokoperenosa v tonkoplenochnykh arsenidgallievykh strukturakh. Kiev: Nauk. dumka, 1990.

Williams, Ralph E. Modern GaAs processing methods. Boston: Artech House, 1990.

Vegas), International Symposium on Gallium Arsenide and Related Compounds (13th 1986 Las. Gallium arsenide and related compounds 1986: Proceedings of the Thirteenth International Symposium on Gallium Arsenide and Related Compounds held in Las Vegas, Nevada, 28 September-1 October 1986. Bristol: Institute of Physics, 1987.

de, Cremoux B., ed. Gallium arsenide and related compounds 1984: Invited and contributed papers from the Eleventh International Symposium on Gallium Arsenide and Related Compounds held in Biarritz, France, on 26-28 September, 1984. Bristol: Hilger, 1985.

Ashby, Carol Iris Hill, 1953- and Institution of Electrical Engineers, eds. Fabrication of GaAs devices. London: Institution of Electrical Engineers, 2005.

International Symposium on Gallium Arsenide and Related Compounds (14th 1987 Heraklion, Greece). Gallium arsenide and related compounds 1987: Proceedings of the Fourteenth International Symposium on Gallium Arsenide and Related Compounds held in Heraklion, Crete, 28 September-1 October 1987. [s.l.]: Institute of Physics, 1988.

Gallium arsenide IC technology: Principles and practice. Blue Ridge Summit, PA: TAB Professional and Reference Books, 1988.

Conference on Semiconducting and Insulating Materials (9th 1996 Toulouse, France). Semiconducting and insulating materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), April 29/May 3, 1996, Toulouse, France. New York: Institute of Electrical and Electronics Engineers, 1996.

Günter, Weimann, Rupprecht H. S, and Institute of Physics (Great Britain), eds. Gallium arsenide and related compounds 1993: Proceedings of the Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, 29 August-2 September, 1993. Bristol: Institute of Physics Pub., 1994.

International Symposium on Gallium Arsenide and Related Compounds (16th 1989 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1989: Proceedings of the Sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25-29 September 1989. Bristol, Eng: published under the Institute of Physics imprint by IOP Pub. Ltd., 1990.

International Symposium on Gallium Arsenide and Related Compounds (12th 1985 Karuizawa, Japan). Gallium Arsenide and Related Compounds 1985: Proceedings of the Twelfth International Symposium in Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September, 1985. Bristol: A. Hilger, 1985.

Germany) Symposium on Non-Stoichiometric III-V Compounds (3rd 2001 Erlangen. 3rd Symposium on Non-Stoichiometric III-V Compounds. Erlangen: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität, 2001.

Conference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Edited by Lendvay E and Magyar Tudományos Akadémia. [Aedermannsdorf], Switzerland: Trans Tech Publications, 1987.

Symposium, on Non-Stoichiometric III-V. Compounds (2nd 1999 Erlangen Germany). 2nd Symposium on Non-Stoichiometric III-V Compounds. Erlangen-Nürnberg: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität, 1999.

Germany) Symposium on Non-Stoichiometric III-V Compounds (1st 1998 Erlangen. Symposium on Non-Stoichiometric III-V Compounds. Erlangen: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg, 1998.

Conference on Semi-insulating III-V Materials. (4th 1986 Hakone, Japan). Semi-insulating III-V materials: Hakone 1986. Tokyo, Japan: OHM, 1986.

Conference, on Semi-insulating III-V. Materials (6th 1990 Toronto Ont ). Semi-insulating III-V materials, Toronto 1990: Proceedings of the 6th Conference on Semi-insulating III-V Materials, held in Toronto, Canada, 13-16 May, 1990. Bristol [England]: A. Hilger, 1990.

Conference on Semi-insulating III-V Materials (8th 1994 Warsaw, Poland). Semi-insulating III-V materials, Warsaw, Poland, 1994: Proceedings of the 8th Conference on Semi-insulating III-V Materials, Warsaw, Poland, June 6-10, 1994. Singapore: World Scientific, 1994.

International Symposium on Gallium Arsenide and Related Compounds (11th 1984 Biarritz, France). Gallium arsenide and related compounds, 1984: Invited and contributed papers from the Eleventh International Symposium on Gallium Arsenide and Related Compounds held at Biarritz, France, on 26-28 September 1984. Bristol, Eng: A. Hilger, 1985.

Kanopoulos, Nick. Gallium arsenide digital integrated circuits: A systems perspective. Englewood Cliffs, N.J: Prentice Hall, 1989.

Gallium arsenide digital integrated circuits: A systems perspective. Englewood Cliffs, N.J: Prentice Hall, 1989.

Lande, Simon. GaAs electronic materials and devices: A strategic study of markets, technologies, and companies worldwide. Edited by Szweda Ralph A. 2nd ed. Kidlington, Oxford, UK: Elsevier Advanced Technology, 1996.

T, Macrander A., ed. Materials aspects of GaAs and InP based structures. Englewood Cliffs, N.J: Prentice Hall, 1991.

International, Symposium on Compound Semiconductors (27th 2000 Monterey Calif ). 2000 IEEE International Symposium on Compound Semiconductors: Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors : held in Monterey, California, 2-5 October, 2000. Piscataway, New Jersey: IEEE, 2000.

International Symposium on Compound Semiconductors (27th 2000 Monterey, Calif.). 2000 IEEE International Symposium on Compound Semiconductors: Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors : held in Monterey, California, 2-5 October, 2000. Piscataway, NJ: IEEE, 2000.

European Gallium Arsenide and Other Compound Semiconductors Application Symposium (13th 2005 Paris, France). GAAS 2005 conference proceedings: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Monday 3rd & Tuesday 4th October 2005. London [UK]: Horizon House Publications, 2005.

Institute of Electrical and Electronics Engineers. and Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers), eds. 2003 International Symposium on Compound Semiconductors: 25-27 August, 2003, Holiday Inn on the Bay, San Diego, CA. Piscataway, N.J: IEEE, 2003.

GaAs Reliability Workshop (1999 Monterey, California). 1999 GaAs Reliability Workshop proceedings, sponsored by JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards, with technical co-sponsorship of the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc., October 17 1999, Monterey, California. Arlington, VA: JEDEC Solid State Technology Association, 1999.

Amsterdam, Netherlands) European Gallium Arsenide and Other Compound Semiconductors Application Symposium (12th 2004. GAAS 2004 conference proceedings: 12th European Gallium Arsenide and other compound semiconductors application symposium, Monday 11th & Tuesday 12th October 2004. London [UK]: Horizon House Publications, 2004.

Yasuhiko, Arakawa, and Institute of Physics (Great Britain), eds. Compound semiconductors 2001: Proceedings of the Twenty-Eighth International Symposium on Compound Semiconductors held in Tokyo, Japan, 1-4 October 2001. Bristol, U.K: Institute of Physics, 2002.

Look, D. C. Electrical characterization of gaAs materials and devices. Chichester: Wiley, 1989.

1956-, Kai Francis, ed. GaAs high-speed devices: Physics, technology, and circuit applications. New York: Wiley, 1994.

Electrical characterization of GaAs materials and devices. Chichester: Wiley, 1989.

Conference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.

C, Jagadish, and Welham N. J, eds. SIMC-XI: 2000 International Semiconducting and Insulating Materials Conference : 3-7 July, 2000, the Australian National University, Canberra, Australia. Piscataway, NJ: IEEE, 2000.

Gallium arsenide. New York: American Institute of Physics, 1987.

Gallium arsenide technology. Indianapolis, Ind., U.S.A: H.W. Sams, 1985.

Mun, Joseph. Gallium Arsenide Integrated Circuits. Butterworth-Heinemann Ltd, 1988.

service), INSPEC (Information, ed. Properties of gallium arsenide. 3rd ed. London: INSPEC, 1996.

Properties of gallium arsenide. 3rd ed. London: INSPEC, 1996.

1950-, Adachi Sadao, Institution of Electrical Engineers, and INSPEC (Information service), eds. Properties of aluminium gallium arsenide. London: IEE, INSPEC, 1993.