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Academic literature on the topic 'Semiconductors; Gallium Arsenide'

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Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Semiconductors; Gallium Arsenide"

1

Brodsky, Marc H. "Progress in Gallium Arsenide Semiconductors." Scientific American 262, no. 2 (February 1990): 68–75. http://dx.doi.org/10.1038/scientificamerican0290-68.

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Webb, J. D., D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, M. W. Wanlass, R. Noufi, and S. M. Vernon. "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer." Applied Spectroscopy 47, no. 11 (November 1993): 1814–19. http://dx.doi.org/10.1366/0003702934066019.

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This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

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3

Kushibiki, Nobuo, Masami Tsukamoto, and Tomoki Erata. "Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors." Chemical Physics Letters 129, no. 3 (August 1986): 303–5. http://dx.doi.org/10.1016/0009-2614(86)80216-0.

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Shi, Jing, James M. Kikkawa, Roger Proksch, Tilman Schäffer, David D. Awschalom, Gilberto Medeiros-Ribeiro, and Pierre M. Petroff. "Assembly of submicrometre ferromagnets in gallium arsenide semiconductors." Nature 377, no. 6551 (October 1995): 707–10. http://dx.doi.org/10.1038/377707a0.

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5

Fang, S. F., K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka. "Gallium arsenide and other compound semiconductors on silicon." Journal of Applied Physics 68, no. 7 (October 1990): R31—R58. http://dx.doi.org/10.1063/1.346284.

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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

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7

Ryan, John. "Semiconductors: An optical Stark effect observed in gallium arsenide." Nature 324, no. 6095 (November 1986): 303. http://dx.doi.org/10.1038/324303a0.

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8

Stern, Michael, Vladimir Umansky, and Israel Bar-Joseph. "Exciton Liquid in Coupled Quantum Wells." Science 343, no. 6166 (January 2, 2014): 55–57. http://dx.doi.org/10.1126/science.1243409.

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Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in gallium arsenide/aluminum gallium arsenide–coupled quantum wells. Above a critical density and below a critical temperature, the photogenerated electrons and holes separate into two phases: an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons and exhibits a short-range order, which is manifested in the photoluminescence line shape.

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9

LI, L. "SITE-SPECIFIC SURFACE CHEMISTRY OF GaAs (001)." Surface Review and Letters 07, no. 05n06 (October 2000): 625–29. http://dx.doi.org/10.1142/s0218625x00000786.

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In this article, we summarize our studies of the surface chemistry of gallium arsenide as it pertains to the metal organic chemical vapor deposition of compound semiconductors. It has been found by scanning tunneling microscopy and vibrational spectroscopy that the adsorption of reactant molecules on reconstruted GaAs (001) surfaces is "site-specific." The adsorption sites on the semiconductor surface are revealed by the vibrational spectrum of adsorbed hydrogen. Studies of arsine adsorption have shown that it dissociatively adsorbs only on gallium sites and transfers hydrogen to the neighboring As atom. Studies of carbon doping with carbon tetrachloride have shown that adsorbed chlorine attacks the exposed gallium and generates volatile GaCl x species. The site-specific nature of this reaction leads to a dramatic change in the film morphology, with the formation of etch pits primarily distributed along the step edges.

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Hadi, Walid A., Reddiprasad Cheekoori, Michael S. Shur, and Stephen K. O’Leary. "Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride." Journal of Materials Science: Materials in Electronics 24, no. 2 (August 1, 2012): 807–13. http://dx.doi.org/10.1007/s10854-012-0818-2.

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Dissertations / Theses on the topic "Semiconductors; Gallium Arsenide"

1

Joyce, Timothy Bruce Frank. "The growth of gallium arsenide and gallium arsenide by chemical beam epitaxy." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240620.

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2

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.
Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.
Includes bibliographical references.
Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.
The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher.
The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained.
Mode of access: World Wide Web.
Various pagings ill

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3

Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

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Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been suggested to be the piezoelectric property of GaAs and stress in the substrate. Stress produced by the encapsulating dielectric film generates a polarization charge density in the substrate. If the magnitude of the polarization charge density is large enough to alter the channel doping profile, then the device characteristics are changed. In this thesis, the effects of stress on GaAs MESFET device characteristics were studied by modelling and experimental works. In the modelling part, polarization charge densities under the gate of an encapsulated MESFET were calculated by using the so called distributed force model and the edge concentrated model. The distributed force model is a much better model because it describes more realistically the stress distribution in the film and in the substrate. It should provide a much more accurate calculation of the induced polarization charge density. The results show that the polarizarition charge densities calculated by the two models have similar distribution pattern, but the magnitudes are very different. With an identical set of conditions, a much larger polarization charge density is predicted by the edge concentrated model. In addition, the distributed force model distinguishes different films by a "hardness" value, based on their elastic property, whereas the edge concentrated model does not. A film with a larger "hardness" value is predicted to generate a larger polarization charge density. Two types of film were considered, SiO₂ and Si₃N₄. Using bulk film characteristics, the calculations showed that Si0₂ film is "harder" than Si₃N₄ film. If an equal built-in stress value is assumed, then a larger polarization charge density is predicted for Si0₂ than for Si₃N₄ encapsulated substrates. In the experimental part, stress was applied to test devices by bending strips of GaAs wafers in a cantilever configuration. MESFETs tested were oriented in the [011] or the [011̅] direction. Both static stress and time-varying stress were applied. In the statics stress experiment, the changes in the barrier height and the C-V profile were measured. It was found that, with equal stress applied, Schottky barriers with a larger ideality factor showed a larger change in the barrier height. In the time-varying stress experiment, attempts were made to measure the effect of the polarization charge density on device characteristics by measuring changes in the drain-source current.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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5

Feng, Guofu. "Optical studies of ion-bombarded gallium arsenide." Diss., Virginia Polytechnic Institute and State University, 1989. http://hdl.handle.net/10919/54357.

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The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ_μ = Γ₀ + AL⁻¹, where Γ₀ (Γ_μ) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium.
Ph. D.

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6

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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7

Rutherford, William C. "Gallium arsenide integrated circuit modeling, layout and fabrication." Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26733.

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The object of the work described in this thesis was to develop GaAs integrated circuit modeling techniques based on a modified version of SPICE 2, then layout, fabricate, model and test ion implanted GaAs MESFET integrated sample and hold circuits. A large signal GaAs MESFET model was used in SPICE to evaluate the relative performance of inverted common drain logic (ICDL) digital integrated circuits compared to other circuit configurations. The integrated sample and hold subsequently referred to as an integrated sampling amplifier block(ISAB), uses a MESFET switch with either one or two guard gates to suppress strobe feedthrough. Performance guidelines suggested by the project sponsor indicate an optimal switch sampling pulse width capability of 25 ps with 5 ps rise and fall time. Guard gates are included in the switch layout to evaluate pulse feedthrough minimization. The project sponsor suggested -20 dB pulse feedthrough isolation and minimum sampling switch off isolation of -20 dB at 10 GHz as project guidelines. Simulations indicate that a 0.5 µm gate length process approaches the suggested performance guidelines. A mask layout was designed and modeled including both selective implant and refractory self aligned gate processes. The refractory self aligned gate process plasma etched t-gate structure produces a sub 0.5 µm gate length.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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8

MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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9

Goringe, Chris. "Computational modelling of reactions on gallium arsenide surfaces." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296894.

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10

Bates, Richard L. "Gallium arsenide radiation detectors for the ATLAS experiment." Thesis, University of Glasgow, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360170.

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Books on the topic "Semiconductors; Gallium Arsenide"

1

Properties of aluminum gallium arsenide. London, United Kingdom: The Institution of Engineering and Technology, 2006.

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Dave, Prochnow, ed. Experiments in gallium arsenide technology. Blue Ridge Summit, PA: Tab Books, 1988.

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3

Gallium arsenide digital circuits. Boston: Kluwer Academic Publishers, 1990.

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4

International Symposium on Gallium Arsenide and Related Compounds (18th 1991 Seattle, Wash.). Gallium arsenide and related compounds 1991: Proceedings of the eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9-12 September 1991. Bristol [England]: Institute of Physics, 1992.

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5

E, Butner Steven, ed. Gallium arsenide digital integrated circuit design. New York: McGraw-Hill, 1990.

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Long, Stephen I. Gallium arsenide digital integrated circuit design. New York: McGraw-Hill, 1990.

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7

Williams, Ralph. Modern GaAs processing methods. 2nd ed. Boston: Artech House, 1990.

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8

GaAs devices and circuits. New York: Plenum Press, 1987.

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International Symposium on Gallium Arsenide and Related Compounds (12th 1985 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1985: Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September, 1985. Bristol: Published on behalf of the Institute of Physics by Hilger, 1986.

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10

Kostylev, Sergeĭ Aleksandrovich. I͡A︡vlenii͡a︡ tokoperenosa v tonkoplenochnykh arsenidgallievykh strukturakh. Kiev: Nauk. dumka, 1990.

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Book chapters on the topic "Semiconductors; Gallium Arsenide"

1

Adachi, Sadao. "Gallium Arsenide (GaAs)." In Optical Constants of Crystalline and Amorphous Semiconductors, 213–26. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_22.

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Adachi, Sadao. "a-Gallium Arsenide (a-GaAs)." In Optical Constants of Crystalline and Amorphous Semiconductors, 692–97. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_67.

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3

Wilshaw, P. R., T. S. Fell, and G. R. Booker. "Recombination at Dislocations in Silicon and Gallium Arsenide." In Point and Extended Defects in Semiconductors, 243–56. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_18.

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Pepper, M., C. J. B. Ford, C. G. Smith, R. J. Brown, R. Newbury, H. Ahmed, D. G. Hasko, et al. "Aspects of One Dimensional Transport Effects in Gallium Arsenide Heterojunction Structures." In Resonant Tunneling in Semiconductors, 451–67. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2_42.

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Bronevoi, I. L., A. N. Krivonosov, and V. I. Perel’. "Phonon Oscillations in a Spectrum of Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse." In Hot Carriers in Semiconductors, 89–91. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_21.

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Liu, Dachun, Guozheng Zha, Liang Hu, and Wenlong Jiang. "Recovery of Gallium and Arsenic from Gallium Arsenide Semiconductor Scraps." In Energy Technology 2018, 319–30. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-72362-4_28.

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Ghione, G., F. Bonani, M. Pirola, and C. U. Naldi. "Noise Modelling in Semiconductor Devices." In Gallium Arsenide Technology in Europe, 228–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78934-2_17.

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Shur, Michael. "Gallium Arsenide versus Silicon — Applications and Modelling." In Semiconductor Device Modelling, 60–69. London: Springer London, 1989. http://dx.doi.org/10.1007/978-1-4471-1033-0_5.

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Yamauchi, H., K. Chiba, and K. Yoshida. "Biological monitoring of arsenic exposure in inorganic arsenic and gallium arsenide-exposed semiconductor workers." In Arsenic, 322–29. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5864-0_25.

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Carter, Dean E., and William T. Bellamy. "Toxicology of the Group III–V Intermetallic Semiconductor, Gallium Arsenide." In Biological Monitoring of Toxic Metals, 455–68. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-0961-1_21.

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Conference papers on the topic "Semiconductors; Gallium Arsenide"

1

Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barrier in the metal-semiconductor contact is investigated. Contacts with aluminum of the following semiconductors were selected as objects of research: indium arsenide(InAs), gallium arsenide (GaAs), indium antimonide(InSb), and cadmium sulfide(CDs). The choice of these crystals is due to the fact that the band gap of these semiconductors increases from U = 0.18 eV for indium arsenide to U =eV for cadmium sulfide, which corresponds to the task in this paper.

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2

Pugnet, Michel, Jacques H. Collet, and Laurent Nardo. "Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24390.

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Consigo, Harold Jeffrey M., Ricardo S. Calanog, and Melissa O. Caseria. "Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0496.

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Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

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Morris, M. L., B. Cook, and J. DiSilvestro. "Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0185.

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Abstract A forward voltage (Vf) snapback phenomenon was observed during the analysis of silicon doped gallium-arsenide (GaAs) light emitting diodes (LEOs). In this paper emphasis is placed on both the techniques used during the analysis and the information obtained. Apart from the standard curve tracer characterizations, and utilization of two microsection techniques, significance is placed on the use of a laser scanning microscope (LSM). The LSM has four main analys is features: photoemission (FE) microscopy, optical beam induced current (OBIC), confocal microscopy and infrared laser scanning microscopy [1]. The analysis of the LEOs utilizes two of these features, PE microscopy and OBlC analysis. These techniques are used in a complementary fashion to analyze the forward voltage snapback. The analysis reveals two independent wafer processing related issues, a junction anomaly and an unintentional phantom junction at the substrate to epi interface. Both phenomena can result in the LED Vf snapback.

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Haidar, R., Philippe Kupecek, Emmanuel Rosencher, Robert Triboulet, and Ph Lemasson. "New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching." In SPIE Proceedings, edited by Jaroslaw Rutkowski and Antoni Rogalski. SPIE, 2003. http://dx.doi.org/10.1117/12.519751.

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6

Kolner, Brian H. "Electro-Optic Sampling In Gallium Arsenide." In Semiconductor Conferences, edited by Ravinder K. Jain. SPIE, 1988. http://dx.doi.org/10.1117/12.940952.

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Norton, D. P., and P. K. Ajmera. "Photochemical Vapor Deposition Of Gallium Arsenide." In 1988 Semiconductor Symposium, edited by Harold G. Craighead and Jagdish Narayan. SPIE, 1988. http://dx.doi.org/10.1117/12.947391.

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8

Nagle, J., and David V. Morgan. "Silicon Nitride For Gallium Arsenide Integrated Circuits." In Semiconductor Conferences, edited by Sayan D. Mukherjee. SPIE, 1987. http://dx.doi.org/10.1117/12.941035.

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9

Saiz, Fernan, and Cristina H. Amon. "The Prediction of the Thermal Conductivity of Gallium Arsenide: A Molecular Dynamics Study." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48114.

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Gallium arsenide is the second most used semiconductor material with applications in light-emitting diodes, field-effect transistors, and integrated circuits. Thus, understanding and controlling the thermal conductivity of gallium arsenide is crucial to design devices for such applications. The goal of this study is to predict the thermal conductivity of gallium arsenide as a function of temperature and vacancy concentration. Thermal conductivities are predicted using an equilibrium molecular dynamics method based on the Green-Kubo formalism with temperatures between 300 K and 900 K and vacancy concentrations up to 0.5%. Our results show that the thermal conductivities of the vacancy-free system predicted by our model are in good agreement with experimental values around the Debye temperature. In addition, our model predicts that conductivities significantly decrease with increasing vacancy concentration. At 300 K conductivities drop by 39.5% with a 0.1% defect content and 74.4% with 0.5% respect to that of the pure system. The power spectra of thermal conductivities and heat current autocorrelation functions indicate that phonon scattering produced near the vacancies reduces the contribution of the acoustic frequencies. The density of states quantifies the decrease of acoustic and optic frequencies by increasing the vacancy concentration.

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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-Wave IR and Long-Wave IR, SWIR is reflected and absorbed by objects, which advantages SWIR imaging higher resolution due to better contrast. SWIR also has excellent imaging quality in low illumination environment and moon light or star light are good emitters outdoor at night. Another primary characteristic of SWIR is high penetration, providing effective imaging under hazy conditions. An Example for night vision between SWIR.

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Reports on the topic "Semiconductors; Gallium Arsenide"

1

Penn, John. Gallium Arsenide (GaAs) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication (ARL Tile #2). Fort Belvoir, VA: Defense Technical Information Center, September 2010. http://dx.doi.org/10.21236/ada529992.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Office of Scientific and Technical Information (OSTI), November 1995. http://dx.doi.org/10.2172/125360.

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Knoll, G. F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/111840.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), November 1995. http://dx.doi.org/10.2172/188626.

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5

In-depth survey report: control technology for gallium arsenide processing at Morgan Semiconductor, Garland, Texas. U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control and Prevention, National Institute for Occupational Safety and Health, June 1994. http://dx.doi.org/10.26616/nioshectb16315b.

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