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1
Khidhir, Ali Hassan. "Optimum diameter for laser beam and effect of temperature rise on the optical bistability hysteresis loops." Iraqi Journal of Physics (IJP) 18, no. 45 (May 30, 2020): 32–39. http://dx.doi.org/10.30723/ijp.v18i45.520.
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In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.
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Casalino, M., G. Coppola, M. Iodice, I. Rendina, and L. Sirleto. "Near-Infrared All-Silicon Photodetectors." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/139278.
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We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.
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Markina, Daria I., Anatoly P. Pushkarev, Ivan I. Shishkin, Filipp E. Komissarenko, Alexander S. Berestennikov, Alexey S. Pavluchenko, Irina P. Smirnova, et al. "Perovskite nanowire lasers on low-refractive-index conductive substrate for high-Q and low-threshold operation." Nanophotonics 9, no. 12 (June 24, 2020): 3977–84. http://dx.doi.org/10.1515/nanoph-2020-0207.
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AbstractOver the last five years, inorganic lead halide perovskite nanowires have emerged as prospective candidates to supersede standard semiconductor analogs in advanced photonic designs and optoelectronic devices. In particular, CsPbX3 (X = Cl, Br, I) perovskite materials have great advantages over conventional semiconductors such as defect tolerance, highly efficient luminescence, and the ability to form regularly shaped nano- and microcavities from solution via fast crystallization. However, on the way of electrically pumped lasing, the perovskite nanowires grown on transparent conductive substrates usually suffer from strong undesirable light leakage increasing their threshold of lasing. Here, we report on the integration of CsPbBr3 nanowires with nanostructured indium tin oxide substrates possessing near-unity effective refractive index and high conductivity by using a simple wet chemical approach. Surface passivation of the substrates is found out to govern the regularity of the perovskite resonators’ shape. The nanowires show room-temperature lasing with ultrahigh quality factors (up to 7860) which are up to four times higher than that of similar structures on a flat indium tin oxide layer, resulting in more than twofold reduction of the lasing threshold for the nanostructured substrate. Numerical modeling of eigenmodes of the nanowires confirms the key role of low-refractive-index substrate for improved light confinement in the Fabry–Pérot cavity which results in superior laser performance.
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Huang, Cheng-Ping, and Che-Ting Chan. "Deep subwavelength Fabry-Perot resonances." EPJ Applied Metamaterials 1 (2014): 2. http://dx.doi.org/10.1051/epjam/2014003.
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Confinement of light by subwavelength objects facilitates the realization of compact photonic devices and the enhancement of light-matter interactions. The Fabry-Perot (FP) cavity provides an efficient tool for confining light. However, the conventional FP cavity length is usually comparable to or larger than the light wavelength, making them inconvenient for many applications. By manipulating the reflection phase at the cavity boundaries, the FP cavity length could be made much smaller than the wavelength. In this review, we consider the subwavelength FP resonance in a plasmonic system composed of a slit grating backed with a ground plane, covering the spectral range from microwave to THz and infrared regime. For very narrow slit width and spacer thickness, a typical zero-order and deep subwavelength FP resonance in the metallic slits can be strongly induced. Moreover, due to the subwavelength FP resonance, greatly enhanced electromagnetic pressure can also be induced in the system. The sign and magnitude of the electromagnetic pressure are dominated by the field penetration effect in the metal as well as the field enhancement in the FP cavities. The effect promises a variety of potential applications, such as detecting tiny motions and driving the mechanical oscillations.
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Ruan, Chunkao, Yongyi Chen, Li Qin, Peng Jia, Yugang Zeng, Yue Song, Yuxin Lei, Zhijun Zhang, Nan Zhang, and Zaijin Li. "Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm." Applied Sciences 11, no. 4 (February 8, 2021): 1531. http://dx.doi.org/10.3390/app11041531.
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The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.
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Lear, Kevin L., and Eric D. Jones. "Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (July 2002): 497–501. http://dx.doi.org/10.1557/mrs2002.166.
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AbstractThis issue of MRS Bulletin presents a review of the progress that vertical-cavity surface-emitting lasers (VCSELs) have made throughout the wavelength spectrum. A VCSEL is a semiconductor laser diode in which light propagates normal to the epitaxial layers. In its older cousin, the Fabry—Pérot laser, light propagates in the plane of the epitaxial layers and reflects from mirrors formed by cleaving a crystal facet across the active layers. No cleaving is required for VCSEL mirrors, which are formed from multiple layers of epitaxially grown or otherwise-deposited thin films. The simple twist in the direction of the laser beam with respect to the epitaxial layers is responsible for most of the unique attributes of VCSELs, which arise from their short cavity length, their completely lithographically defined cross section, and their reliance on only wafer-scale processes for device fabrication. The articles in this issue cover a range of topics, including blue devices, short-wavelength communications lasers, recent advances in 1.3-μm VCSELs, fundamental materials issues related to distributed Bragg reflectors, theoretical quantum-well gain calculations, and work on quantum-dot VCSELs.
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Sikdar, Debabrata, and Alexei A. Kornyshev. "An electro-tunable Fabry–Perot interferometer based on dual mirror-on-mirror nanoplasmonic metamaterials." Nanophotonics 8, no. 12 (November 8, 2019): 2279–90. http://dx.doi.org/10.1515/nanoph-2019-0317.
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AbstractMirror-on-mirror nanoplasmonic metamaterials, formed on the basis of voltage-controlled reversible self-assembly of sub-wavelength-sized metallic nanoparticles (NPs) on thin metallic film electrodes, are promising candidates for novel electro-tunable optical devices. Here, we present a new design of electro-tunable Fabry–Perot interferometers (FPIs) in which two parallel mirrors – each composed of a monolayer of NPs self-assembled on a thin metallic electrode – form an optical cavity, which is filled with an aqueous solution. The reflectivity of the cavity mirrors can be electrically adjusted, simultaneously or separately, via a small variation of the electrode potentials, which would alter the inter-NP separation in the monolayers. To investigate optical transmittance from the proposed FPI device, we develop a nine-layer-stack theoretical model, based on our effective medium theory and multi-layer Fresnel reflection scheme, which produces excellent match when verified against full-wave simulations. We show that strong plasmonic coupling among silver NPs forming a monolayer on a thin silver-film substrate makes reflectivity of each cavity mirror highly sensitive to the inter-NP separation. Such a design allows the continuous tuning of the multiple narrow and intense transmission peaks emerging from an FPI cavity via electro-tuning the inter-NP separation in situ – reaping the benefits from both inexpensive bottom-up fabrication and energy-efficient tuning.
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Probert, P. J., and J. E. Carroll. "Lumped circuit model for prediction of linewidth in fabry perot and DFB lasers, including external cavity devices." IEE Proceedings J Optoelectronics 136, no. 1 (1989): 22. http://dx.doi.org/10.1049/ip-j.1989.0007.
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Takahashi, Toshiaki, Yong-Joon Choi, Kazuaki Sawada, and Kazuhiro Takahashi. "A ppm Ethanol Sensor Based on Fabry–Perot Interferometric Surface Stress Transducer at Room Temperature." Sensors 20, no. 23 (November 30, 2020): 6868. http://dx.doi.org/10.3390/s20236868.
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Disease screening by exhaled breath diagnosis is less burdensome for patients, and various devices have been developed as promising diagnostic methods. We developed a microelectromechanical system (MEMS) optical interferometric surface stress sensor to detect volatile ethanol gas at room temperature (26~27 °C) with high sensitivity. A sub-micron air gap in the optical interferometric sensor reduces interference orders, leading to increased spectral response associated with nanomechanical deflection caused by ethanol adsorption. The sub-micron cavity was embedded in a substrate using a transfer technique of parylene-C nanosheet. The sensor with a 0.4 µm gap shows a linear stable reaction, with small standard deviations, even at low ethanol gas concentrations of 5–110 ppm and a reversible reaction to the gas concentration change. Furthermore, the possibility of detecting sub-ppm ethanol concentration by optimizing the diameter and thickness of the deformable membrane is suggested. Compared with conventional MEMS surface stress gas sensors, the proposed optical interferometric sensor demonstrated high-sensitivity gas detection with exceeding the detection limit by two orders of magnitude while reducing the sensing area.
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SCHMIDT, OLIVER, PETER KIESEL, MICHAEL BASSLER, and NOBLE JOHNSON. "CHIP-SIZE WAVELENGTH DETECTORS." International Journal of High Speed Electronics and Systems 17, no. 04 (December 2007): 661–70. http://dx.doi.org/10.1142/s0129156407004862.
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Chip-size wavelength detectors are described that can resolve the spectrum of the incident light with high accuracy over a broad spectral range. The devices can be configured either as compact spectrometers or precise wavelength shift detectors. Applications that are anticipated to benefit from the spectrometers include reagentless optical identification of analytes in fluidic and aerosol samples. The wavelength shift detector is widely applicable as read-out instrument for optical sensors in which a stimulus (e.g., temperature, strain, PH-value, etc.) results in a wavelength shift of an optical output signal, examples include the interrogation system for Fiber Bragg Grating sensors, photonic crystal sensors, Fabry-Perot type sensors, and sensors in which an analyte influences a laser cavity and thereby its emission wavelength.
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Liu, Xiaoyi, Jinbo Gao, Yanchao Wang, Xiaoyi Wang, Haigui Yang, Haixiang Hu, Jinsong Gao, Tarik Bourouina, and Tianhong Cui. "Simultaneous field enhancement and loss inhibition based on surface plasmon polariton mode hybridization." Nanophotonics 9, no. 9 (April 22, 2020): 2809–16. http://dx.doi.org/10.1515/nanoph-2020-0023.
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AbstractIn common plasmonic configurations, energy loss and field enhancement are mutually restricted. In a vast majority of cases, high confinement goes together with high loss, which is a serious limitation for some applications. In an attempt of breaking this rule, which holds true for surface plasmon polariton (SPP) resonators, a multilayer trench grating microstructure with an asymmetric waveguide is considered. It supports both Fabry-Perot (FP) and cavity modes, whose hybridization exhibits unusual properties. The electric field enhancement was modulated by regulating the corresponding absorption and radiation quality factors. At the same time, energy loss was reduced, which is fundamentally ascribed to the mutual recycling of radiation energy between FP and cavity resonators. The maximum total quality factor and strongest field enhancement were both observed at the vicinity of quasi-static limit, thereby signifying that the structure exhibited simultaneous optimizations of field enhancement and loss inhibition, which is crucial to the design of high-quality SPP-based devices.
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Casalino, M., G. Coppola, M. Gioffrè, M. Iodice, L. Moretti, I. Rendina, and L. Sirleto. "Microcavity Silicon Photodetectors at 1.55 μm." Advances in OptoElectronics 2011 (December 19, 2011): 1–10. http://dx.doi.org/10.1155/2011/965967.
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The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.
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Khidhir, Ali Hassan. "Optimization Procedures using Effect of Etalon Finesse and Driving Term on Optical Bistability." Iraqi Journal of Physics (IJP) 18, no. 44 (February 27, 2020): 17–24. http://dx.doi.org/10.30723/ijp.v18i44.498.
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In this work, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). Because of a trade off between the etalon finesse values and driving terms, an optimization procedures have been done on the InSb etalon/CO laser parameters, using critical switching irradiance (Ic) via simulation systems of optimization procedures of optical cavity. in order to achieve the minimum switching power and faster switching time, the optimization parameters of the finesse values and driving terms on optical bistability and switching dynamics must be studied.
In addition, for different values of a cavity finesse (for example, F = 25 and 2.37) the switching intensity takes low values with a high finesse etalon compared to a high switching intensity with a low finesse etalon. So, the minimum switching power for a low finesse etalon is ⁓0.785mW, and is about 0.0785mW for a high finesse etalon. The driving term peak of a high finesse etalon becomes higher and the slowing down region becomes less, leading to a fast switching as compared with a slow switching in a low finesse etalon. So that, the minimum switching time was about 300ns for a low finesse etalon, and about 150ns for a high finesse etalon.
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Salvatori, Stefano, Gennaro Salvatore Ponticelli, Sara Pettinato, Silvio Genna, and Stefano Guarino. "High-Pressure Sensors Based on Laser-Manufactured Sintered Silicon Carbide." Applied Sciences 10, no. 20 (October 13, 2020): 7095. http://dx.doi.org/10.3390/app10207095.
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In this work Sintered Silicon Carbide (S-SiC) samples have been used to fabricate fiber-optic-coupled pressure sensors. The sensor structure reproduces a low-finesse Fabry–Perot (FP) interferometer. Laser manufacturing of cylindrical S-SiC samples was performed to define the thin membrane geometry of sensors. FP cavity is defined by the end-face of a single mode fiber and the S-SiC diaphragm surface. Hence, pressure is evaluated by measuring the cavity depth by a dedicated optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of S-SiC, in terms of high hardness, low thermal expansion, and high thermal conductivity, realized devices have been characterized up to 20 MPa. Experimental results demonstrate that produced sensors exhibit a non-linearity around ±0.6%F.S. and a high input dynamics. The all-optic sensing system proposed in this work would represent a good alternative to conventional solutions based on piezoelectric effects, overcoming the drawback related to electromagnetic interference on the acquired signals. In addition, the mechanical characteristics of S-SiC allow the use of the sensor in both automotive and aerospace hostile environments as pressure monitors in combustion engines.
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Guo, Wenfeng, Jianxun Liu, Jinrong Liu, Gao Wang, Guanjun Wang, and Mengxing Huang. "A Single-Ended Ultra-Thin Spherical Microbubble Based on the Improved Critical-State Pressure-Assisted Arc Discharge Method." Coatings 9, no. 2 (February 22, 2019): 144. http://dx.doi.org/10.3390/coatings9020144.
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Hollow core microbubble structures are good candidates for the construction of high performance whispering gallery microresonator and Fabry-Perot (FP) interference devices. In the previous reports, most of interest was just focused on the dual-ended microbubble, but not single-ended microbubble, which could be used for tip sensing or other special areas. The thickness, symmetry and uniformity of the single-ended microbubble in previous reports were far from idealization. Thus, a new ultra-thin single-ended spherical microbubble based on the improved critical-state pressure-assisted arc discharge method was proposed and fabricated firstly in this paper, which was fabricated simply by using a commercial fusion splicer. The improvement to former paper was using weak discharge and releasing pressure gradually during the discharging process. Thus, the negative influence of gravity towards bubble deformation was decreased, and the fabricated microbubble structure had a thin, smooth and uniform surface. By changing the arc discharge parameters and the fiber position, the wall thicknesses of the fabricated microbubble could reach the level of 2 μm or less. The fiber Fabry-Perot (FP) interference technique was also used to analyze the deformation characteristic of microbubble under difference filling pressures. Finding the ends of the microbubbles had a trend of elongation with axial compression when the filling pressure was increasing. Its sensitivity to the inner pressure of microbubble samples was about ~556 nm/MPa, the bubble wall thickness was only of about 2 μm. Besides, a high whispering gallery mode (WGM) quality factor that up to 107 was realized by using this microbubble-based resonator. To explain the upper phenomenon, the microbubble was modeled and simulated with the ANSYS software. Results of this study could be useful for developing new single-ended whispering gallery mode micro-cavity structure, pressure sensors, etc.
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Maciak, Erwin. "Low-Coherence Interferometric Fiber Optic Sensor for Humidity Monitoring Based on Nafion® Thin Film." Sensors 19, no. 3 (February 2, 2019): 629. http://dx.doi.org/10.3390/s19030629.
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The main aim of this work was the design and development simple fiber optic Fabry-Perot interferometer (FPI) sensor devices for relative humidity (RH) sensing with emphasis on high sensitivity and good stability. The RH fiber FPI sensor is fabricated by coating the end of a cleaved standard multi-mode (MM) fiber with hydrophilic Nafion® sensing film. The Nafion® thin film acts as an active resonance cavity of the low-coherence interferometric sensing structure. The fringe pattern, which is caused by interfering light beam in the Nafion® thin film will shift as the RH changes because the water molecules will swell the Nafion® film and thus change optical pathlength of the sensing structure. The operating principle of a FPI sensor based on the adsorption and desorption of water vapour in the Nafion® and the limitations of this sensor type are discussed in this work. The fiber optic hygrometer was tested in the visible (400–900 nm) region of spectra for measurement of relative humidity (RH) in the range of 5.5–80% at room temperature (RT) in air. The fiber optic humidity sensor has a very short response time (t90 = 5–80 s) and a fast regeneration time (t10 = 5–12 s) as good as commercial sensors.
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Azzam, Shaimaa I., and Alexander V. Kildishev. "Time-domain dynamics of reverse saturable absorbers with application to plasmon-enhanced optical limiters." Nanophotonics 8, no. 1 (November 23, 2018): 145–51. http://dx.doi.org/10.1515/nanoph-2018-0139.
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AbstractAn advanced full-wave time-domain numerical model for reverse saturable absorption (RSA) is presented and verified. Rate equations describing atomic relaxations and excitation dynamics are coupled to the Maxwell equations by using a Lorentzian oscillator, which models the kinetics-dependent light–matter interactions. The presented novel technique provides a versatile multiphysics framework for designing complex structures and integrating diverse material models that were not previously possible. The multiphysics framework allows capturing the behavior of the RSA materials embedded in artificial photonic nanostructures that cannot be analyzed with established techniques such as the Beer–Lambert law. To showcase the importance of the full-wave RSA analysis coupled to carrier kinetics, we analyze two plasmon-enhanced optical limiters: a metal grating and a Fabry–Perot cavity-like structure where we decrease the unenhanced limiter threshold by a factor of 3 and 13, respectively. This is a promising approach for developing RSA devices operating at reduced illumination levels and thereby significantly expanding their area of applicability to areas such as protective eyewear and automatically dimmed windows. By exploring the dynamic behavior of a given RSA system, this framework will provide critical insights into the design of transformative photonic devices and their complementary optical characterization, and serve as an invaluable utility for guiding the development of synthetic absorbing materials. We believe that our multiphysics models are crucial enabling tools that lay a necessary foundation for the numerical machinery required for the realization and optimization of optical limiting and all-optical switching systems.
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Castagna, Maria E., Salvatore Coffa, Mariantonietta Monaco, Anna Muscara', Liliana Caristia, Simona Lorenti, and Alberto Messina. "High Efficiency Light Emission Devices in Silicon." MRS Proceedings 770 (2003). http://dx.doi.org/10.1557/proc-770-i2.1.
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AbstractWe report on the fabrication and performances of the most efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 μm electroluminescence at 300K with a 10% external quantum efficiency, comparable to that of standard light emitting diodes using III-V semiconductors. Emission at different wavelenghts has been achieved incorporating different rare earths (Ce, Tb, Yb, Pr) in the gate dielectric. The external quantum efficiency depends on the rare earth ions incorporated and ranges from 10% (for an Tb doped MOS) to 0.1% (for an Yb doped MOS). RE excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light emitting MOS devices have been fabricated using Er-doped SRO (Silicon Rich Oxide) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 0.2%. In these devices Er pumping occurs part by hot electrons and part by energy transfer from the Si nanostructures to the rare earth ions, depending by Si excess in the film. Si/SiO2 Fabry-Perot microcavities have been fabricated to enhance the external quantum emission along the cavity axis and the spectral purity of emission from the films that are used as active media to realize a Si based RCLED (resonant cavity light emitting diode). These structures are realized by chemical vapour deposition on a silicon substrate. The microcavities are tuned at different wavelengths: 540nm, 980nm and 1540nm (characteristic emission wavelengths respectively for Tb, Yb and Er). The reflectivity of the microcavities is of 97% and the quality factor ranges from 60 (for the cavity tuned at 980nm) to 95 (for the cavities tuned at 540nm and 1540nm).
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Yang, Wu, Chonglei Zhang, Jiaqi Zeng, and Wei Song. "Ultrasonic signal detection based on Fabry–Perot cavity sensor." Visual Computing for Industry, Biomedicine, and Art 4, no. 1 (April 8, 2021). http://dx.doi.org/10.1186/s42492-021-00074-0.
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AbstractAcoustic/ultrasonic sensors are devices that can convert mechanical energy into electrical signals. The Fabry–Perot cavity is processed on the end face of the double-clad fiber by a two-photon three-dimensional lithography machine. In this study, the outer diameter of the core cladding was 250 μm, the diameter of the core was 9 μm, and the microcavity sensing unit was only 30 μm. It could measure ultrasonic signals with high precision. The characteristics of the proposed ultrasonic sensor were investigated, and its feasibility was proven through experiments. Its design has a small size and can replace a larger ultrasonic detector device for photoacoustic signal detection. The sensor is applicable to the field of biomedical information technology, including medical diagnosis, photoacoustic endoscopy, and photoacoustic imaging.
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Khidhir, Ali H. "Effect of Surface Recombination on Diffusion Length and Active Cavity Life time." Iraqi Journal of Science, December 29, 2020, 3215–20. http://dx.doi.org/10.24996/ijs.2020.61.12.9.
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This work presents an analytical study for simulating a Fabry-Perot Bi-stable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonite (InSb). Depending on the obtained results and because of a trade-off between the optical path length of the sample and active cavity lifetime, an optimization procedure was applied on the InSb etalon/CO laser parameters; critical switching irradiance (Ic) was applied via simulation systems of optimization procedures of optical cavity (Matlap program was used to study the optical Bi-stability of a nonlinear Fabry-Perot cavity). In order to achieve minimum switching power and faster switching time, the optimization surface recombination on the diffusion length and effective cavity lifetime was studied.
In addition, for a specific absorption value 400 cm-1, the lifetime coefficient values were 0.33 , 0.091 , 0.0172 ns for sample thickness (D) = 500 , 60 , 20 mm, respectively. Also, for a bulk recombination time (Tl) of 200 ns, specific absorption (α) of 50 cm1, and D of 20 mm, the surface recombination speed value was 2.845 x 105 cm/sec, whereas the active lifetime, which is defined as the thickness over the surface recombination speed (sυ) (D/2sυ), was equal to 3.5ns.
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Abedini Dereshgi, Sina, Thomas G. Folland, Akshay A. Murthy, Xianglian Song, Ibrahim Tanriover, Vinayak P. Dravid, Joshua D. Caldwell, and Koray Aydin. "Lithography-free IR polarization converters via orthogonal in-plane phonons in α-MoO3 flakes." Nature Communications 11, no. 1 (November 13, 2020). http://dx.doi.org/10.1038/s41467-020-19499-x.
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AbstractExploiting polaritons in natural vdW materials has been successful in achieving extreme light confinement and low-loss optical devices and enabling simplified device integration. Recently, α-MoO3 has been reported as a semiconducting biaxial vdW material capable of sustaining naturally orthogonal in-plane phonon polariton modes in IR. In this study, we investigate the polarization-dependent optical characteristics of cavities formed using α-MoO3 to extend the degrees of freedom in the design of IR photonic components exploiting the in-plane anisotropy of this material. Polarization-dependent absorption over 80% in a multilayer Fabry-Perot structure with α-MoO3 is reported without the need for nanoscale fabrication on the α-MoO3. We observe coupling between the α-MoO3 optical phonons and the Fabry-Perot cavity resonances. Using cross-polarized reflectance spectroscopy we show that the strong birefringence results in 15% of the total power converted into the orthogonal polarization with respect to incident wave. These findings can open new avenues in the quest for polarization filters and low-loss, integrated planar IR photonics and in dictating polarization control.
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Chen, Ying, Jinggang Cao, Yangmei Xu, Xinbei Gao, and Jinchao Xie. "Study on Fano resonance sensing characteristics of double-baffle MDM waveguide coupled disk cavity with absorption material." Modern Physics Letters B, November 5, 2020, 2150065. http://dx.doi.org/10.1142/s0217984921500652.
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A metal-dielectric-metal (MDM) waveguide coupled disk cavity structure with bimetallic baffle is proposed, which bases on the transmission characteristics of surface plasmon polaritons (SPPs) in subwavelength structure, and the absorption material InGaAsP is filled in the Fabry–Perot (F-P) cavity and disk cavity. The Fano resonance is an asymmetric spectral line formed by the destructive interference between the wide continuous state generated by the F-P resonator and the narrow discrete state interference generated by the disk cavity. Based on the coupled mode theory, the formation mechanism of the Fano resonance of the structure is qualitatively analyzed. The structure was simulated by finite element method to quantitatively analyze the influence of structural parameters and absorption material InGaAsP on the refractive index sensing characteristics. The proposed sensor yields sensitivity higher than 1360 nm/refractive index unit (RIU) and a figure of merit of [Formula: see text] by optimizing the geometry parameters and filling the absorption material InGaAsP. This structure has potential applications for high integration of nanosensors, slow-light devices, and nano-optical switches.