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Relevant bibliographies by topics / Semiconductors; Fabry-Perot cavity devices

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Academic literature on the topic 'Semiconductors; Fabry-Perot cavity devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Semiconductors; Fabry-Perot cavity devices"

1

Khidhir, Ali Hassan. "Optimum diameter for laser beam and effect of temperature rise on the optical bistability hysteresis loops." Iraqi Journal of Physics (IJP) 18, no. 45 (May 30, 2020): 32–39. http://dx.doi.org/10.30723/ijp.v18i45.520.

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In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.

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Casalino, M., G. Coppola, M. Iodice, I. Rendina, and L. Sirleto. "Near-Infrared All-Silicon Photodetectors." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/139278.

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We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.

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Markina, Daria I., Anatoly P. Pushkarev, Ivan I. Shishkin, Filipp E. Komissarenko, Alexander S. Berestennikov, Alexey S. Pavluchenko, Irina P. Smirnova, et al. "Perovskite nanowire lasers on low-refractive-index conductive substrate for high-Q and low-threshold operation." Nanophotonics 9, no. 12 (June 24, 2020): 3977–84. http://dx.doi.org/10.1515/nanoph-2020-0207.

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AbstractOver the last five years, inorganic lead halide perovskite nanowires have emerged as prospective candidates to supersede standard semiconductor analogs in advanced photonic designs and optoelectronic devices. In particular, CsPbX3 (X = Cl, Br, I) perovskite materials have great advantages over conventional semiconductors such as defect tolerance, highly efficient luminescence, and the ability to form regularly shaped nano- and microcavities from solution via fast crystallization. However, on the way of electrically pumped lasing, the perovskite nanowires grown on transparent conductive substrates usually suffer from strong undesirable light leakage increasing their threshold of lasing. Here, we report on the integration of CsPbBr3 nanowires with nanostructured indium tin oxide substrates possessing near-unity effective refractive index and high conductivity by using a simple wet chemical approach. Surface passivation of the substrates is found out to govern the regularity of the perovskite resonators’ shape. The nanowires show room-temperature lasing with ultrahigh quality factors (up to 7860) which are up to four times higher than that of similar structures on a flat indium tin oxide layer, resulting in more than twofold reduction of the lasing threshold for the nanostructured substrate. Numerical modeling of eigenmodes of the nanowires confirms the key role of low-refractive-index substrate for improved light confinement in the Fabry–Pérot cavity which results in superior laser performance.

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Huang, Cheng-Ping, and Che-Ting Chan. "Deep subwavelength Fabry-Perot resonances." EPJ Applied Metamaterials 1 (2014): 2. http://dx.doi.org/10.1051/epjam/2014003.

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Confinement of light by subwavelength objects facilitates the realization of compact photonic devices and the enhancement of light-matter interactions. The Fabry-Perot (FP) cavity provides an efficient tool for confining light. However, the conventional FP cavity length is usually comparable to or larger than the light wavelength, making them inconvenient for many applications. By manipulating the reflection phase at the cavity boundaries, the FP cavity length could be made much smaller than the wavelength. In this review, we consider the subwavelength FP resonance in a plasmonic system composed of a slit grating backed with a ground plane, covering the spectral range from microwave to THz and infrared regime. For very narrow slit width and spacer thickness, a typical zero-order and deep subwavelength FP resonance in the metallic slits can be strongly induced. Moreover, due to the subwavelength FP resonance, greatly enhanced electromagnetic pressure can also be induced in the system. The sign and magnitude of the electromagnetic pressure are dominated by the field penetration effect in the metal as well as the field enhancement in the FP cavities. The effect promises a variety of potential applications, such as detecting tiny motions and driving the mechanical oscillations.

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Ruan, Chunkao, Yongyi Chen, Li Qin, Peng Jia, Yugang Zeng, Yue Song, Yuxin Lei, Zhijun Zhang, Nan Zhang, and Zaijin Li. "Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm." Applied Sciences 11, no. 4 (February 8, 2021): 1531. http://dx.doi.org/10.3390/app11041531.

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The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

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Lear, Kevin L., and Eric D. Jones. "Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (July 2002): 497–501. http://dx.doi.org/10.1557/mrs2002.166.

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AbstractThis issue of MRS Bulletin presents a review of the progress that vertical-cavity surface-emitting lasers (VCSELs) have made throughout the wavelength spectrum. A VCSEL is a semiconductor laser diode in which light propagates normal to the epitaxial layers. In its older cousin, the Fabry—Pérot laser, light propagates in the plane of the epitaxial layers and reflects from mirrors formed by cleaving a crystal facet across the active layers. No cleaving is required for VCSEL mirrors, which are formed from multiple layers of epitaxially grown or otherwise-deposited thin films. The simple twist in the direction of the laser beam with respect to the epitaxial layers is responsible for most of the unique attributes of VCSELs, which arise from their short cavity length, their completely lithographically defined cross section, and their reliance on only wafer-scale processes for device fabrication. The articles in this issue cover a range of topics, including blue devices, short-wavelength communications lasers, recent advances in 1.3-μm VCSELs, fundamental materials issues related to distributed Bragg reflectors, theoretical quantum-well gain calculations, and work on quantum-dot VCSELs.

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Sikdar, Debabrata, and Alexei A. Kornyshev. "An electro-tunable Fabry–Perot interferometer based on dual mirror-on-mirror nanoplasmonic metamaterials." Nanophotonics 8, no. 12 (November 8, 2019): 2279–90. http://dx.doi.org/10.1515/nanoph-2019-0317.

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AbstractMirror-on-mirror nanoplasmonic metamaterials, formed on the basis of voltage-controlled reversible self-assembly of sub-wavelength-sized metallic nanoparticles (NPs) on thin metallic film electrodes, are promising candidates for novel electro-tunable optical devices. Here, we present a new design of electro-tunable Fabry–Perot interferometers (FPIs) in which two parallel mirrors – each composed of a monolayer of NPs self-assembled on a thin metallic electrode – form an optical cavity, which is filled with an aqueous solution. The reflectivity of the cavity mirrors can be electrically adjusted, simultaneously or separately, via a small variation of the electrode potentials, which would alter the inter-NP separation in the monolayers. To investigate optical transmittance from the proposed FPI device, we develop a nine-layer-stack theoretical model, based on our effective medium theory and multi-layer Fresnel reflection scheme, which produces excellent match when verified against full-wave simulations. We show that strong plasmonic coupling among silver NPs forming a monolayer on a thin silver-film substrate makes reflectivity of each cavity mirror highly sensitive to the inter-NP separation. Such a design allows the continuous tuning of the multiple narrow and intense transmission peaks emerging from an FPI cavity via electro-tuning the inter-NP separation in situ – reaping the benefits from both inexpensive bottom-up fabrication and energy-efficient tuning.

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Probert, P. J., and J. E. Carroll. "Lumped circuit model for prediction of linewidth in fabry perot and DFB lasers, including external cavity devices." IEE Proceedings J Optoelectronics 136, no. 1 (1989): 22. http://dx.doi.org/10.1049/ip-j.1989.0007.

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Takahashi, Toshiaki, Yong-Joon Choi, Kazuaki Sawada, and Kazuhiro Takahashi. "A ppm Ethanol Sensor Based on Fabry–Perot Interferometric Surface Stress Transducer at Room Temperature." Sensors 20, no. 23 (November 30, 2020): 6868. http://dx.doi.org/10.3390/s20236868.

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Disease screening by exhaled breath diagnosis is less burdensome for patients, and various devices have been developed as promising diagnostic methods. We developed a microelectromechanical system (MEMS) optical interferometric surface stress sensor to detect volatile ethanol gas at room temperature (26~27 °C) with high sensitivity. A sub-micron air gap in the optical interferometric sensor reduces interference orders, leading to increased spectral response associated with nanomechanical deflection caused by ethanol adsorption. The sub-micron cavity was embedded in a substrate using a transfer technique of parylene-C nanosheet. The sensor with a 0.4 µm gap shows a linear stable reaction, with small standard deviations, even at low ethanol gas concentrations of 5–110 ppm and a reversible reaction to the gas concentration change. Furthermore, the possibility of detecting sub-ppm ethanol concentration by optimizing the diameter and thickness of the deformable membrane is suggested. Compared with conventional MEMS surface stress gas sensors, the proposed optical interferometric sensor demonstrated high-sensitivity gas detection with exceeding the detection limit by two orders of magnitude while reducing the sensing area.

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SCHMIDT, OLIVER, PETER KIESEL, MICHAEL BASSLER, and NOBLE JOHNSON. "CHIP-SIZE WAVELENGTH DETECTORS." International Journal of High Speed Electronics and Systems 17, no. 04 (December 2007): 661–70. http://dx.doi.org/10.1142/s0129156407004862.

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Chip-size wavelength detectors are described that can resolve the spectrum of the incident light with high accuracy over a broad spectral range. The devices can be configured either as compact spectrometers or precise wavelength shift detectors. Applications that are anticipated to benefit from the spectrometers include reagentless optical identification of analytes in fluidic and aerosol samples. The wavelength shift detector is widely applicable as read-out instrument for optical sensors in which a stimulus (e.g., temperature, strain, PH-value, etc.) results in a wavelength shift of an optical output signal, examples include the interrogation system for Fiber Bragg Grating sensors, photonic crystal sensors, Fabry-Perot type sensors, and sensors in which an analyte influences a laser cavity and thereby its emission wavelength.

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Dissertations / Theses on the topic "Semiconductors; Fabry-Perot cavity devices"

1

Tang, Chee Fai. "A study of the temperature dependent optical properties of InGaAsP-based multiple quantum wells and multilayer structures." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362008.

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Afshar, Abolfazl Mozaffari. "Optical properties of semiconductors quantum microcavity structures." Thesis, University of Sheffield, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298196.

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Stamatescu, Laurentiu. "Antiphase dynamics in solid state lasers with Fabry-Perot cavity / by Laurentiu Stamatescu." 2003. http://hdl.handle.net/2440/22000.

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Bibliography: leaves 154-156.
156 leaves : ill. (some col.) ; 30 cm.
Title page, contents and abstract only. The complete thesis in print form is available from the University Library.
This thesis describes the construction of a low-power end pumped Nd:YAG laser and the subsequent theoretical and experimental investigation of the antiphase dynamics exhibited by the laser. The end pumped laser was modelled by extending the classical model of Tang Statz deMars to non-uniform pump along the active medium. The anomalous threshold behaviour of the laser, where modes with lower gain can supass modes with higher gain as the pump power increases, was accounted for. The antiphase dynamics were explored by modulating the pump power and measuring the transfer functions from this input to various outputs. The laser's response to various sources of noise was also studied.
Thesis (Ph.D.)--University of Adelaide, School of Chemistry and Physics, Discipline of Physics and Mathematical Physics, 2003?

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Conference papers on the topic "Semiconductors; Fabry-Perot cavity devices"

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Saha, A. K., and T. Suhara. "Demonstration of Two-Wavelength Lasing in a GaAsP Ring/Fabry-Perot Composite Cavity Semiconductor Laser." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.a-7-7.

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Bimberg, D., N. N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V. M. Ustinov, P. S. Kopev, Z. I. Alferov, and J. A. Lott. "Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711736.

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Jiao, Wenting, and Junqiang Sun. "Integrated optical filter consisting of micro-ring resonator embedded in Fabry-Perot cavity." In 2020 International Conference on Optoelectronic Materials and Devices, edited by Siting Chen and Pei Wang. SPIE, 2021. http://dx.doi.org/10.1117/12.2592271.

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Liu, Yunqi, and Kin Seng Chiang. "Fiber-Bragg-grating cavity sensor based on a self-seeded Fabry-Perot laser diode." In Passive Components and Fiber-based Devices III. SPIE, 2006. http://dx.doi.org/10.1117/12.689261.

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Lopera, Jhon A., Ana M. Cárdenas, Gladys A. Quintero, Juan D. Zapata, and Jhon J. Granada Torres. "Low-reflective Fabry-Perot Laser Diode Cavity as a Colorless Source on a WDM-PON System." In Photonic Networks and Devices. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/networks.2020.netu2b.3.

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Li, Zhaosong, Dan Lu, and Yiming He. "A waveguide loss measurement method based on the reflected interferometric pattern of a Fabry-Perot cavity." In Integrated Optics: Devices, Materials, and Technologies XXII, edited by Sonia M. García-Blanco and Pavel Cheben. SPIE, 2018. http://dx.doi.org/10.1117/12.2288922.

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Coppola, Giuseppe, Mario Iodice, Nunzia Saffioti, Rocco C. Zaccuri, Maurizio Indolfi, Ivo Rendina, Alessandra Rocco, and Pietro Ferraro. "Fiber Bragg grating sensor monitoring with thermally tuned Fabry-Perot cavity integrated in an all-silicon rib waveguide." In Integrated Optoelectronic Devices 2005, edited by Joel A. Kubby and Ghassan E. Jabbour. SPIE, 2005. http://dx.doi.org/10.1117/12.590650.

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