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Dissertations / Theses on the topic 'Semiconductor'

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Published: 4 June 2021

Last updated: 1 August 2024

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1

Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

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Thesis (M.S.)--West Virginia University, 2004.
Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).

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2

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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3

Modi, Nihar Triplett Gregory Edward. "Thermal management in GaAs/AlGaAs laser diode structures." Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.

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Title from PDF of title page (University of Missouri--Columbia, viewed on Feb. 16, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis supervisor: Dr. Gregory Triplett. Includes bibliographical references.

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4

Ramamurthi, Vikram. "Analysis of production control methods for semiconductor research and development fabs using simulation /." Link to online version, 2004. https://ritdml.rit.edu/dspace/handle/1850/938.

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5

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A comparison with a plasma theory indicates that in GaAs, band filling and screening of the continuum-state Coulomb enhancement are the most efficient mechanisms, while in ZnSe, exciton screening and broadening are the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair of ZnSe at room temperature is comparable to that of bulk GaAs and the exciton recovery times are of the order of 100 ps or less. A systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs MQWs and the results of nonlinear optical switching and gain in a 58 A GaAs/AlGaAs MQW are reported and discussed. The maximum change in the refractive index is greatest for the MQWs with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 A MQW. A differential energy gain of 0.2 and the contrast of 4 are measured for a 58 MQW using 3 ns laser pulses. The linear and nonlinear optical properties of CdSe semiconductor microcrystallites grown under different heat treatments in borosilicate glasses are investigated. Pump-probe spectroscopic techniques and interferometric techniques were employed to study size quantization effects in these microcrystallites (quantum dots). Nonlinear optical properties due to the transitions between quantum confined electron and hole states are reported for low temperature and room temperature. A relatively large homogeneous linewidth is observed. Single beam saturation experiments for quantum confined samples were performed to study the optical nonlinearities as a function of microcrystallite size. Results indicate that the saturation intensity is larger for smaller size quantum dots.

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6

Calhoun, Kenneth Harold. "Thin film compound semiconductor devices for photonic interconnects." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15478.

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7

Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

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8

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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9

Sun, Yunlong. "Laser processing optimization for semiconductor based devices /." Full text open access at:, 1997. http://content.ohsu.edu/u?/etd,3.

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10

Los, Andrei. "Influence of carrier freeze-out on SiC Schottky junction admittance." Diss., Mississippi State : Mississippi State University, 2001. http://library.msstate.edu/etd/show.asp?etd=etd-03272001-120540.

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11

Schuerlein, Thomas John. "Chemisorption in organic semiconductor systems: Investigation of organic semiconductor-organic semiconductor and organic semiconductor-metal interfaces." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187068.

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The production of ordered thin films of organic monolayers is of general interest to the surface science community and of specific interest to our laboratory where the understanding of small molecule adsorption has been a long term goal. The production of ordered thin films may simplify the study of the interactions of adsorbate molecules on organic films. The production of ordered layers of aromatic hydrocarbons and dye molecules were performed under a variety of deposition conditions in an ultrahigh vacuum (UHV) environment. These films were studied with several UHV analytical techniques including low energy electron diffraction, photoelectron spectroscopies, thermal program desorption mass spectrometry and visible spectroscopy. The study of several aromatic hydrocarbons revealed that these molecules possess significant mobility on the Cu(100) surface, while adsorbing with their molecular plane parallel to the copper surface. A majority of phthalocyanine (Pc) molecules studied were observed to adsorb in a single packing structure at similar substrate temperatures for divalent metal centers and a slightly higher temperature for trivalent metal centers. Chloroaluminum phthalocyanine was determined to pack in a unique structure at 150°C and adopt the previously observed phthalocyanine structure at 175°C. It was determined that the perylene derivatives 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N, N-dimethyl-3,4,9,10-perylene-bis(carboxylimide) (DMPI) dissociatively interact with a Cu(100) surface while forming an epitaxial overlayer. These two structurally similar molecules were determined to possess different growth modes at the initial stages of growth, which was attributed to their different bulk packing structures. The electronic properties of a Pc-PTCDA heterostructure were investigated via ultraviolet photoelectron spectroscopy. The investigation correctly anticipated the diode behavior of this isotype heterostructure. This study also proved the validity of the electron affinity rule, developed for inorganic structures, for organic systems.

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12

Mahadavan, Malina. "Analytical aspects of metal semiconductor barriers based on organic semiconductors." Thesis, University of Liverpool, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490804.

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Over recent years, research into organic semiconductors has intensified considerably due to the increasing commercial viability of inexpensive, flexible, large area electronic applications. In particular, the introduction of a new generation of small molecule based organic semiconductors has increased the possibility of achieving high field effect mobilities. So far pentacene seems to be the most promising candidate since it yields field effect mobilities that are comparable to that of hydrogenated amorphous silicon (a-Si:H). Recently, a mobility larger than 1.2 cm2y-fs-l and an on/off ratio greater than 108 was reported for a thin film transistor (TFT) made with triisopropylsilyl pentacene (TIPSpentacene) as the active material. The solution processability of TIPS-pentacene is advantageous since solution-processed organic TFTs are needed to pave the way for low cost manufacturing approaches such as inkjet printing and roll-to-roll processing. One ofthe main potential applications for organic materials is in low cost radio frequency identification (RFID) tags operating at a frequency of 13.56MHz. The high frequency op~ration of RFID tags will be most demanding on the rectifying component of the circuit which can be based either on a TFT or a rectifying diode. This thesis is primarily concerned with analysing metal semiconductor barriers made with a variety of organic semiconductors such as highly regioregular poly(3-hexylthiophene) (p3HT), polytriarylamine (PTAA) (S 1105) and vacuum-deposited pentacene. The work includes a review of the various charge transport models proposed along with a discussion on the Meyer Neldel Rule (MNR) which is a commonly occurring phenomenon in organic semiconductors. A simple analytical model that demonstrates the empirical relationship between mobility and carrier density is also developed. This general dependency is formally known as the Universal Mobility Law (UML). The electrical characteristics of Schott)..)' junctions made between aluminium and various organic solids are investigated. Both P3HT and PTAA are highly disordered semiconductors whilst pentacene is a small molecule organic semiconductor akin to polycrystalline inorganic solids. The analysis of the pentacene vertical diode is thus extensively based on the model developed by Eccleston. The AI-PTAA Schott)..)' diode is found to not only yield a high rectification ratio but also an extremely low off current which suggests that the device is most suitable for low current circuit operations. In contrast, diodes based on P3HT and pentacene demonstrate much weaker rectifYing properties. Nevertheless, in these diodes, the non-saturation of the reverse currents allows the dopant densities ofthe materials to be determined. The new current density expression developed for organic based Schottk.')' diodes allows the characteristic temperature of the exponential distribution of intrinsic carriers (To) and states (Te) to be determined directly from the forward current density voltage characteristic. The Meyer Neldel energy representing the exponential density of states (DOS) is then obtained using the value of TeÃ‚Â• In general, the !\tIN energy estimated from the exponential current regime ofthe diodes range between 30 meV and 35 meV. Special attention is given to the saturation current region of the diodes as relatively high currents are needed to satisfY the demands ofRFID related circuits. The saturation current of the as-synthesised P3HT diode was found to obey Ohm's law over the entire applied voltage range. In contrast, the PTAA and pentacene diodes demonstrate a transition from ohmic to space charge limited (SCL) conduction with increasing applied bias. The saturation current regime of these diodes is modelled using the new SCL current expression developed for disordered materials. The intrinsic value of Te determined for both diodes suggests the absence of dopant states at higher energies. The effects of changing the back metal/organic interface and further with doping with 2,3-dichloro-5,6-dicyano-I,4-benzoquinone (DDQ) on the saturation region ofAI-PTAA Schottk.')' diodes are also studied. Finally, the temperature variation of the current density voltage characteristics of assynthesised P3HT and PTAA Schottk.')' diodes are analysed. Below room temperature, the distinct fall in the forward exponential slope leads to much larger ideality factors 1/. This is attributed to the non-ideal behaviour of the Schottk.')' barrier interface with decreasing temperature. The anomalous rise in 1/ is attributed to a number of possibilities including the presence of extrinsic trapping states, carriers taking alternative routes to other potential barriers and the lack of validity of the flat quasi Fermi level approximation. Modelling the saturation current region of the PTAA diode with the new SCL current expression yields a self-consistent value of Te at relatively high temperatures. The steep decline in the Meyer Neldel energy observed at lower temperatures is mainly attributed to the formation of a potential barrier at the back metal/organic interface.

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13

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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14

OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

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The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and differential transmission spectra. The measured spectra reveal several beautiful effects which are attributed to the many-particle effects of electron-hole plasma. The spectra reveal: bandgap renormalization, broadening of the tail states and screening of the continuum states, state filling (spectral hole burning), thermalization of nonthermal carrier population distributions, band filling due to carrier relaxation of the thermal and nonthermal distributions, direct electron-hole recombination and long lived (>>100 ps) tail states which are attributed to electron trapping. Absorption edge dynamics discussed in this dissertation span 15 orders of magnitude.

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15

Johnson, William A. "What constitutes national security in the semiconductor industry? a look at the competing views surrounding DoD's support of semiconductuors /." Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA241699.

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Thesis (M.S. in Financial Management)--Naval Postgraduate School, December 1990.
Thesis Advisor(s): Gates, William. Second Reader: Terasawa, Katsuaki. "December 1990." Description based on title screen as viewed on March 31, 2010. DTIC Identifier(s): Semiconductor Industry, Budgets, Department Of Defense, Theses. Author(s) subject terms: Semiconductors, National Security, Federal Economic Intervention. Includes bibliographical references (p. 69-71). Also available in print.

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16

Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.

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17

Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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18

Kelkar, Kapil S. "Semiconductor modeling for multi-layer, high field photo switch using sub-bandgap photons /." free to MU campus, to others for purchase, 2004. http://wwwlib.umi.com/cr/mo/fullcit?p1421147.

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19

Bode, Christopher Allen. "Run-to-run control of overlay and linewidth in semiconductor manufacturing." Digital version:, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008281.

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20

Mashigo, Donald. "Raman spectroscopy of ternary III-V semiconducting films." Thesis, Nelson Mandela Metropolitan University, 2009. http://hdl.handle.net/10948/1011.

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The III-V semiconductor compounds (i.e. In Ga As x 1-x , 1 x x InAs Sb - , In Ga Sb x 1-x and Al Ga As x 1-x ) have been studied using room temperature Raman spectroscopy. X-ray diffraction has been used as a complementary characterization technique. In this study all the III-V semiconductor compounds were grown by metal organic chemical vapour deposition (MOCVD) on GaAs and GaSb substrates. The layers were studied with respect to composition, strain variation and critical thickness. Raman spectroscopy has been employed to assess the composition dependence of optical phonons in the layers. The alloy composition was varied, while the thickness was kept constant in order to investigate compositional effects. A significant frequency shift of the phonon modes were observed as the composition changed. The composition dependence of the phonon frequencies were described by linear and polynomial expressions. The results of this study were compared with previous Raman and infrared work on III-V semiconductor compounds. Strain relaxation in InGaAs and InGaSb has been investigated by Raman and X-ray diffraction. Measurements were performed on several series of layers. For each series, the thickness was varied, while keeping the composition constant. For a given composition, the layer thicknesses were such that some layers should be fully strained, some partially relaxed and some fully relaxed. The Raman peak shifts and XRD confirm that a layer grows up to the critical thickness and then releases the strain as the thickness increases. Critical layer thickness values measured in this study were compared with published data, in which various techniques had been used to estimate the critical thickness.

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21

Krishnamurthy, Nicole Andrea. "Mixed material integration for high speed applications." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/14684.

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22

Daniels-Hafer, Carrie Lynn. "Electrochemical tuning of charge transport at inorganic semiconductor doped conjugated polymer interfaces through manipulation of electrochemical potential /." view abstract or download file of text, 2004.

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Thesis (Ph. D.)--University of Oregon, 2004.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 185-196). Also available for download via the World Wide Web; free to University of Oregon users.

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23

Allsop, Nicholas. "Semiconductor nanoparticles." Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400549.

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24

Lane, R. L. "Semiconductor electrochemistry." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.370280.

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25

Dias, N. L. "Semiconductor photoelectrochemistry." Thesis, Imperial College London, 1988. http://hdl.handle.net/10044/1/47025.

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26

Nielsen, Michael. "Semiconductor nanoplasmonics." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/55102.

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The weak optical nonlinearities of natural materials restrict device sizes in photonic integrated circuits to dimensions far larger than conventional electronics. By exploiting the strong coupling between photons and collective electron oscillations in metals, plasmonics can confine light far below the Abbe diffraction limit. This increased confinement leads to enhanced nonlinear interactions that can be used for a wide range of applications. This thesis examines the integration of plasmonic components into semiconductor photonic architectures in order to utilize the strong light-matter interactions inherent in plasmonics to improve the performance of photonic integrated circuits. In order to study integrated plasmonic devices, free-space laser light must first be coupled into the optical devices. To this end, a directional plasmonic-photonic coupler was designed to efficiently couple ultrashort pulses on-chip. Then, silicon hybrid gap plasmon waveguides (HGPWs) were studied for their waveguiding properties which includes the transition from photonic-like to plasmonic-like properties depending on gap width. Three-photon absorption photoluminescence in selectively deposited quantum dots showed the viability of these waveguides for extreme nanofocusing, which can be used to enhance light-matter interactions. With the capability for high light intensities comes the possibility of nonlinear applications such as frequency mixing in the HGPWs. Four-wave mixing (FWM) in these waveguides was thus first explored theoretically and found to be promising, with conversion efficiencies comparable to photonic devices, and with no reliance upon phase-matching or dispersion considerations. The Z-scan measurement technique was utilized to explore organic polymers for the high nonlinearity and low refractive index necessary for plasmonics. Solution processing of such films is also advantageous for integrating the nonlinear material within nanoscopic gaps. Finally, once a suitable nonlinear polymer was found, FWM in the HGPWs was explored experimentally. These findings give further evidence of the capabilities of plasmonics to enable strong light-matter interactions in extremely small volumes.

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27

Vandersand, James Dennis. "Growth of 6H-SiC homoepitaxy on substrates off-cut between the [01-10] planes." Master's thesis, Mississippi State : Mississippi State University, 2002. http://library.msstate.edu/etd/show.asp?etd=etd-11072002-095154.

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28

Li, Bin. "Electrical bistability in organic semiconductors and spin injection using organic magnetic semiconductor." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1334864514.

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29

Tallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.

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30

Tull, Elizabeth J. "Non symmetric semiconductor insulator semiconductor junctions between q particles." Thesis, University of Bristol, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251147.

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31

Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been suggested to be the piezoelectric property of GaAs and stress in the substrate. Stress produced by the encapsulating dielectric film generates a polarization charge density in the substrate. If the magnitude of the polarization charge density is large enough to alter the channel doping profile, then the device characteristics are changed. In this thesis, the effects of stress on GaAs MESFET device characteristics were studied by modelling and experimental works. In the modelling part, polarization charge densities under the gate of an encapsulated MESFET were calculated by using the so called distributed force model and the edge concentrated model. The distributed force model is a much better model because it describes more realistically the stress distribution in the film and in the substrate. It should provide a much more accurate calculation of the induced polarization charge density. The results show that the polarizarition charge densities calculated by the two models have similar distribution pattern, but the magnitudes are very different. With an identical set of conditions, a much larger polarization charge density is predicted by the edge concentrated model. In addition, the distributed force model distinguishes different films by a "hardness" value, based on their elastic property, whereas the edge concentrated model does not. A film with a larger "hardness" value is predicted to generate a larger polarization charge density. Two types of film were considered, SiO₂ and Si₃N₄. Using bulk film characteristics, the calculations showed that Si0₂ film is "harder" than Si₃N₄ film. If an equal built-in stress value is assumed, then a larger polarization charge density is predicted for Si0₂ than for Si₃N₄ encapsulated substrates. In the experimental part, stress was applied to test devices by bending strips of GaAs wafers in a cantilever configuration. MESFETs tested were oriented in the [011] or the [011̅] direction. Both static stress and time-varying stress were applied. In the statics stress experiment, the changes in the barrier height and the C-V profile were measured. It was found that, with equal stress applied, Schottky barriers with a larger ideality factor showed a larger change in the barrier height. In the time-varying stress experiment, attempts were made to measure the effect of the polarization charge density on device characteristics by measuring changes in the drain-source current.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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32

Erwin. "Electron eigenvalues and eigenfunctions for a nanochannel with a finite rectangular barrier." Virtual Press, 1994. http://liblink.bsu.edu/uhtbin/catkey/917032.

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Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The effects of size, strength and location of the impurity are discussed.In order to find the electronic transverse energy levels, wavefunctions and hopping integrals, two FORTRAN computer programs were developed. The first, called Program Data Input, writes the computational parameters to a data file. The second, Program Single Impurity, uses this data file in performing the calculations of the electronic transverse energy levels, eigenfunctions and hopping integrals.
Department of Physics and Astronomy

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Vasdekis, Andreas E. "Microresonators for organic semiconductor and fluidic lasers." Thesis, St Andrews, 2007. http://hdl.handle.net/10023/375.

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Buzzo, Marco. "Dopant imaging and profiling of wide bandgap semiconductor devices /." Konstanz : Hartung-Gorre, 2007. http://www.loc.gov/catdir/toc/fy0715/2007427206.html.

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Kelly, Leah L. "Electronic Structure and Dynamics at Organic Semiconductor / Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566997.

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In this dissertation, I present the results of my research on a prototypical interface of the metal oxide ZnO and the organic semiconductor C₆₀. I establish that the physics at such oxide / organic interfaces is complex and very different from the extensively investigated case of organic semiconductor / metal interfaces. The studies presented in this dissertation were designed to address and improve the understanding of the fundamental physics at such hybrid organic / inorganic interfaces. Using photoemission spectroscopies, I show that metal oxide defect states play an important role in determining the interfacial electronic properties, such as energy level alignment and charge carrier dynamics. In particular, I show that for hybrid interfaces, electronic phenomena are sensitive to the surface electronic structure of the inorganic semiconductor. I also demonstrate applications of photoemission spectroscopies which are unique in that they allow for a direct comparison of ultrafast charge carrier dynamics at the interface and the electronic structure of defect levels. The research presented here focuses on a achieving a significant understanding of the realistic and device relevant C₆₀ / ZnO hybrid interface. I show how the complex surface structure of ZnO can be modified by simple experimental protocols, with direct and dramatic consequences on the interfacial energy level alignment, carrier dynamics and carrier collection and injection efficiencies. As a result of this careful study of the electronic structure and dynamics at the C₆₀ / ZnO interface, a greater understanding of the role of gap states in interface hybridization and charge carrier localization is obtained. This dissertation constitutes a first step in achieving a fundamental understanding of hybrid interfacial electronic properties.

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36

Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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Farner, William Robert. "On-chip probe metrology /." Online version of thesis, 2008. http://hdl.handle.net/1850/6207.

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38

Isaev, Leonid. "Spontaneous polarization effects in nanoscale systems based on narrow-gap semiconductors." Virtual Press, 2005. http://liblink.bsu.edu/uhtbin/catkey/1328116.

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In the framework of the two-band (Dirac) model, we analyze the electronic structure of nanoscale systems, based on narrow-gap semiconductors of Pb,_xSnx (Se, S) type. Themain attention is paid to the influence of properties of the surface, encoded in appropriate boundary conditions, on the size-quantized spectrum. From this point of view we consider two types of systems: spherical (quantum dots) and quasi one-dimensional (films).It is shown that the spectrum of the spherical quantum dot consists not only of usual size-quantized states, located above the gap edge, but also surface modes residing inside the gap. Such states manifest themselves in the far infrared part of the absorption spectrum, the measurement of which allows one to extract information about the dot surface.Next, we consider a film with the energy gap modulated in the <111> (growth) direction. It is shown that the spectrum of the infinite crystal possesses a supersymmetrical structure. The film boundaries, generally speaking, destroy the supersymmetry, i.e. size-quantized subbands turn out to be spin-split. However, there exists a class of boundary conditions that do not lift spin degeneracy. Physically, in this case there is no band mismatch at interfaces. Our central statement, therefore, consists of the following: even when the inversion symmetry is destroyed by the bulk inhomogeneity, the spin-splitting of the spectrum is a purely surface effect. This is illustrated on a simple example, when the energy gap varies linearly over the film width.Finally, we investigate the role of boundary conditions in the problem of scattering of spinor waves by a quantum dot. It is shown that the existence of surface states greatly modifies the scattering data; in particular, outgoing waves may turn out to be fully polarized.
Department of Physics and Astronomy

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39

Chan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.

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40

West, Matthew K. "Diffusion of sulfur into natural diamond : characterization and applications in radiation detection /." free to MU campus, to others for purchase, 1999. http://wwwlib.umi.com/cr/mo/fullcit?p9964011.

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41

Moussa, Jonathan Edward. "The Schroedinger-Poisson selfconsistency in layered quantum semiconductor structures." Link to electronic thesis, 2003. http://www.wpi.edu/Pubs/ETD/Available/etd-1124103-230904/.

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Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)." Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&amp.

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In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot &ndash
wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that
hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.

We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced.

This work explores the optical, structural and electronic properties of this promising material whose study &ndash
samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.

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Bennett, Donald John. "Semiconductor process modelling." Thesis, University of the West of Scotland, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259677.

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Erwin, Grant. "Compact semiconductor lasers." Thesis, University of Glasgow, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.479040.

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Chikan, Viktor. "Layered semiconductor nanoparticles /." Search for this dissertation online, 2002. http://wwwlib.umi.com/cr/ksu/main.

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Bishop, Sarah R. "Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces." Diss., [La Jolla] : University of California, San Diego, 2010. http://wwwlib.umi.com/cr/ucsd/fullcit?p3397565.

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Thesis (Ph. D.)--University of California, San Diego, 2010.
Title from first page of PDF file (viewed April 7, 2010). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.

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Jimenez, David Jesus Fermin. "Semiconductor photoelectrochemistry : multi-electron transfer processes at illuminated semiconductor-electrolyte interfaces." Thesis, University of Bath, 1996. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319217.

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Wang, Yue. "Low threshold organic semiconductor lasers and their application as explosive sensors." Thesis, University of St Andrews, 2012. http://hdl.handle.net/10023/3491.

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This thesis presents studies of organic semiconductor lasers, including their operation when pumped by a light-emitting diode (LED), and their application as explosive sensors. The photophysics and amplified spontaneous emission (ASE) of star-shaped oligofluorene truxene molecules were investigated. These materials exhibit high gain and low optical loss in thin-film waveguides. Low ASE thresholds were achieved with the truxene T3 and T4. Second-order distributed feedback (DFB) lasers were fabricated, with pump threshold intensities below 0.5 kW/cm² and broad tunability of the emission. DFB lasers were demonstrated with a novel polymer BBEHP-PPV, pumped by a pulsed commercial InGaN LED. The laser emission occurred at 533 nm for peak drive current above 15 A. The output beams and pulse-dynamics of the lasers were investigated for the first time, along with a 'double-threshold' phenomenon that was observed in this long-pulse pumping regime. BBEHP-PPV lasers based on various types of diffractive resonators were also fabricated by UV nanoimprint-lithography (NIL). By optimising the resonator design and the fabrication, and the pump-beam geometry, polymer laser thresholds of ~60 W/cm², the lowest recorded for NIL lasers, were demonstrated, enabling them to be pumped by pulsed commercial LEDs and custom micro-LED arrays. One promising application of organic lasers is in explosive sensing. A polymer of intrinsic microporosity (PIM-1) was used to detect nitroaromatic vapours. Rapid detection of dinitrobenzene (DNB) of low vapour pressure was achieved by monitoring the photoluminescence and laser emission during exposure. In addition, a CMOS time-resolved fluorescence lifetime microsystem with a commercial green-emitting copolymer was used as a novel, portable sensor to detect DNB vapour. An InGaN LED pumped BBEHP-PPV laser was also used as a miniature sensor to detect 10 ppb of DNB. These highly sensitive hybrid sensors could be used in humanitarian demining, complementing existing technologies leading to improvement in the detection of hazardous objects.

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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Malins, David Brendan. "Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures /." St Andrews, 2007. http://hdl.handle.net/10023/404.

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