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Journal articles on the topic 'Semiconductor optical amplifiers (SOAs)'

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Author: Grafiati

Published: 10 December 2022

Last updated: 29 January 2023

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1

Hasan, Muhnaad Abbas. "Design and Implement All-optical Logic Gates And by Using Semiconductor Optical Amplifiers (SOAs)." Journal of Advanced Research in Dynamical and Control Systems 12, no. 7 (July 20, 2020): 563–70. http://dx.doi.org/10.5373/jardcs/v12i7/20202039.

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2

Kotb, Amer. "Performance of All-Optical XNOR Gate Based on Two-Photon Absorption in Semiconductor Optical Amplifiers." Advances in Optical Technologies 2014 (December 31, 2014): 1–6. http://dx.doi.org/10.1155/2014/754713.

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All-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is realized by using Mach-Zehnder interferometers (MZIs) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor optical amplifiers (SOAs). The employed model takes into account the impact of amplified spontaneous emission (ASE), input pulse energy, pulsewidth, SOAs carrier lifetime, and linewidth enhancement factor (α-factor) on the gate’s output quality factor (Q-factor). The outcome of this study shows that the all-optical XNOR gate is indeed feasible with the proposed scheme at 250 Gb/s with both logical correctness and acceptable quality.

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3

Pavlovs, D., V. Bobrovs, M. Parfjonovs, A. Alsevska, and G. Ivanovs. "Investigation of Power Efficiency Changes in DWDM Systems Replacing Erbium-Doped Amplifiers By Semiconductor Optical Amplifiers." Latvian Journal of Physics and Technical Sciences 59, no. 1 (February 1, 2022): 44–52. http://dx.doi.org/10.2478/lpts-2022-0005.

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Abstract To evaluate potential utilization of semiconductor optical amplifiers (SOAs) as a wideband amplification alternative to erbium doped fibre amplifiers (EDFAs) in dense wavelength division multiplexed (DWDM) coherent systems, the authors discuss changes in power consumption levels required for a single bit transmission. The research evaluates the power efficiency parameter for WDM transmission systems using both amplification schemes – EDFAs that utilise standard C-band and SOAs assuming 75 nm amplification spectral band. The power efficiency levels have been estimated for five transmission spans with maximal distance of 640 km. The standard 50 GHz channel spacing has been chosen for both system configurations to allocate 100 Gbps dual-polarization quadrature phase shift keying (DP-QPSK) optical signals. The simulation schemes are described along with the critical parameters, derived from the recent relevant studies that should be taken into account considering usage of SOAs as in-line amplifiers.

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JAHROMI, HAMED DEHDASHTI, ALI BINAIE, ABBAS ZARIFKAR, and MOHAMMAD HOSSEIN SHEIKHI. "A NEW STRUCTURE FOR ALL-OPTICAL THREE-INPUT XOR LOGIC GATE BASED ON SEMICONDUCTOR OPTICAL AMPLIFIER MACH–ZEHNDER INTERFEROMETER." International Journal of Modern Physics B 28, no. 07 (February 20, 2014): 1450052. http://dx.doi.org/10.1142/s0217979214500520.

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In this paper the design and simulation of an all-optical three-input exclusive-OR (XOR) gate based on semiconductor optical amplifier-Mach–Zehnder interferometer (SOA-MZI) configuration is presented. This gate is constructed of three semiconductor optical amplifiers placed at the arms of the two coupled Mach–Zehnder interferometers. The outputs of these two MZIs are combined at the output port to form the final signal. The proposed scheme does not need a continuous wave (CW) laser for its operation and is designed so that the minimum number SOAs are employed. Theoretical analyses and simulations show that this structure acts as an all-optical three-input XOR logic gate which has many applications in optical data communications.

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5

Renaud, Thibaut, Heming Huang, Frédéric Grillot, and Dieter Bimberg. "Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers." Laser Physics Letters 19, no. 11 (October 7, 2022): 116202. http://dx.doi.org/10.1088/1612-202x/ac9595.

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Abstract The nonlinear features of both semiconductor optical amplifiers (SOAs) and semiconductor lasers, which are made from the same InAs/GaAs quantum dot (QD) wafers, are investigated in detail. By employing pump-probe driven four-wave mixing as an experimental tool, the wave conversion process shows notably different profiles for the two types of devices. Due to the contributions of ultrafast, sub-picosecond mechanisms, such as carrier heating and spectral hole burning, the pump-probe frequency can be easily tuned to the THz range. SOAs generally benefit more from sub-picosecond carrier dynamics, hence exhibiting a higher conversion efficiency (CE) in the THz range, compared to their laser diode counterparts. The discrepancy even exceeds 10 dB. In addition, laser experiments yield some differences from the amplifier ones, hence leading to a higher nonlinear CE at small detuning ranges. These results strongly improve our insight into the fundamental nonlinear properties of InAs/GaAs QD material, and contribute to the conception of novel devices for future on-chip applications in all-optical communication networks, such as signal wavelength conversion, mode-locking, and optical frequency comb generation.

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6

Wu, Jian, Min Xue Wang, and Bing Bing Wu. "All-Optical Signal Processing Based on Nonlinear Effects in Semiconductor Optical Amplifiers." Advanced Materials Research 74 (June 2009): 39–43. http://dx.doi.org/10.4028/www.scientific.net/amr.74.39.

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In this paper, we report our recent studies on developing nonlinear techniques based on a single SOA for all-optical signal processing at high-speed, with a focus on simple configurations employing commercial SOAs for several key all-optical network applications. Our researches are based on nonlinear polarization rotation (NPR), four-wave mixing (FWM) and cross-phase modulation (XPM) effects in a single SOA. We propose and demonstrate applications of the nonlinear techniques in all-optical logic gates, multi-function format coversion, tunable Lyot birefringent filter and multi-channel optical time division multiplexed (OTDM) demultiplexing.

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7

MUKHERJEE, KOUSIK. "SEMICONDUCTOR OPTICAL AMPLIFIER BASED FREQUENCY ENCODED LOGIC GATES EXPLOITING NONLINEAR POLARIZATION ROTATION ONLY." Journal of Circuits, Systems and Computers 23, no. 09 (August 25, 2014): 1450130. http://dx.doi.org/10.1142/s0218126614501308.

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All optical frequency encoded logic gates NOT, OR and AND are proposed and described using polarization rotation in semiconductor optical amplifiers (SOAs). The switching power of the logic gates are very low and have capability to speed of 320 Gbps. The gates are easily integrable, simple in hardware and compatible to optical network. The input and output power requirement is included.

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8

Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (November 23, 2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

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9

Taleb, Hussein, Kambiz Abedi, and Saeed Golmohammadi. "Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model." Advances in OptoElectronics 2013 (March 7, 2013): 1–8. http://dx.doi.org/10.1155/2013/831852.

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A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes. Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.

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10

Han, Bingchen, Junyu Xu, Pengfei Chen, Rongrong Guo, Yuanqi Gu, Yu Ning, and Yi Liu. "All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers." Applied Sciences 11, no. 4 (February 7, 2021): 1499. http://dx.doi.org/10.3390/app11041499.

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An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

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11

Chang, Shu-Hao. "Patent Analysis of the Critical Technology Network of Semiconductor Optical Amplifiers." Applied Sciences 10, no. 4 (February 24, 2020): 1552. http://dx.doi.org/10.3390/app10041552.

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With the development of 5G, mobile communication, and optical communication technologies, semiconductor optical amplifiers (SOAs) have become an important research topic. However, most SOA-related studies have focused on a technical discussion or market research but have failed to indicate the critical SOA technologies and the SOA technology development trends. Therefore, this study analyzes SOA patents and constructs a technology network for SOA patents. The results indicate that the critical SOA technologies are mainly used in lasers, semiconductor lasers, light guides, electromagnetic wave transmission communication other than radio-wave communication, and devices controlling light sources. Among the five critical SOA technologies, lasers (H01S3) account for the highest percentage at 22.21%. Consequently, the critical technologies do not focus on specific technology fields but have characteristics of multiple technology fields. In addition, considerable development has occurred in semiconductor lasers in recent years. Finally, patentee analysis indicates that for SOA technologies, the public sector and academia play relatively weak roles in early technology development or following technology development. However, with the rapid development of mobile communication and optical communication, the government of each country can consider investing additional R&D funds and resources in the future. This study constructs a network model for patent technologies to explore the development tendencies for SOA technologies. This model can be used as a reference for R&D resource management and the promotion of new technologies.

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12

Tussupov, A. D., A. T. Tokhmetov, and N. I. Listopad. "Polarization diversity scheme for reach extension of WDM/TDM gigabit passive optical network up to 60 km using quantum dot semiconductor optical amplifiers." Doklady BGUIR 19, no. 4 (July 1, 2021): 80–84. http://dx.doi.org/10.35596/1729-7648-2021-19-4-80-84.

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Gigabit passive optical networks (GPON) are the most advanced technology. The data transfer rate is 2.5 Gbps for downstream and 1.25 Gbps for upstreams. But this network architecture has a limited physical network length of 20 km. This is due to the high budgetary losses of the network. This restriction of access makes the network difficult to access for subscribers located far from the facilities of the telecom operator, and coverage of remote settlements is quite costly (cost of design work, fiber, laying of fiber-optic cable), thereby complicating the elimination of the digital divide between the city, the suburbs and the countryside. To solve this problem, it is proposed to use quantum dot semiconductor optical amplifiers (QD-SOA), which will expand the GPON reach up to 60 km, which is the limit for the logical length under the current protocols. Quantum dot semiconductor optical amplifiers are promising devices for optical communication technology, but for commercial use they have one disadvantage. They are polarization sensitive. In this paper the authors constructed a polarization diversity scheme to avoid polarization sensitivity of QD-SOAs.

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13

Yamashita, Shinji, Yuichi Nakazaki, Ryosei Konishi, and Osamu Kusakari. "Wide and Fast Wavelength-Swept Fiber Laser Based on Dispersion Tuning for Dynamic Sensing." Journal of Sensors 2009 (2009): 1–12. http://dx.doi.org/10.1155/2009/572835.

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We have developed a unique wide and fast wavelength-swept fiber laser for dynamic and accurate fiber sensing. The wavelength tuning is based on the dispersion tuning technique, which simply modulates the loss/gain in the dispersive laser cavity. By using wideband semiconductor optical amplifiers (SOAs), the sweep range could be as wide as∼180 nm. Since the cavity contains no mechanical components, such as tunable filters, we could achieve very high sweep rate, as high as∼200 kHz. We have realized the swept lasers at three wavelength bands, 1550 nm, 1300 nm, and 800 nm, using SOAs along with erbium-doped fiber amplifiers (EDFAs), and in two laser configurations, ring and linear ones. We also succeeded in applying the swept laser for a dynamic fiber-Bragg grating (FBG) sensor system. In this paper, we review our researches on the wide and fast wavelength-swept fiber lasers.

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14

Sahbudin, U. K., M. H. A. Wahid, M. A. M. Azidin, N. A. M. Ahmad Hambali, N. R. Yusof, and M. M. Shahimin. "High Speed All-Photonic Flip-Flop Operation at a Single Wavelength." Applied Mechanics and Materials 815 (November 2015): 390–93. http://dx.doi.org/10.4028/www.scientific.net/amm.815.390.

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This work is based on dual Mach-Zehnder interferometer with semiconductor optical amplifiers in both arms. The proposed flip-flop operates at a single wavelength. A bidirectional coupler is placed at the end of the system to observe the output at set and reset terminals. The signals modulate the injected photon rate in the SOAs thus forming photonic flip-flop function. The photon injection rate is modulated due to self-gain modulation and self-phase modulation that occur in the SOAs towards demonstrating optical bistability. Switching between states of the flip-flop occur at full width half maximum of 32 ps. The output power of this flip-flop is around 24.5 mW. It is observed that the switching energy can be adjusted to a low level by decreasing the injected currents into the SOAs. The injection and the input power are the two parameters that govern the whole operation of the designed flip-flop.

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15

M. Alatwi, Aadel, and Ahmed Nabih Zaki Rashed. "A pulse amplitude modulation scheme based on in-line semiconductor optical amplifiers (SOAs) for optical soliton systems." Indonesian Journal of Electrical Engineering and Computer Science 21, no. 2 (February 1, 2021): 1014. http://dx.doi.org/10.11591/ijeecs.v21.i2.pp1014-1021.

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<p>The objective of this work is to simulate a pulse amplitude modulation (PAM) scheme based on in-line semiconductor optical amplifiers for optical soliton systems. The max. power for soliton systems, based on various bits/symbol PAM modulation schemes after a fiber length of 100 km, is simulated and clarified. In addition to the max. Q factor for soliton systems, PAM modulation schemes with various in-line SOA injection currents and a fiber length of 100 km are also simulated and demonstrated in the results. The total electrical power after photo-detectors for soliton systems, based on PAM modulation schemes with various in-line SOA injection currents and a fiber length of 100 km, is also simulated and clarified in the results. The study emphasizes that the higher the SOA injection current, the higher the electrical power and the lower the Q factor that can be achieved in the soliton system.</p>

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16

Chowdhury, Tasnuva, and Mohammad Nasir Uddin. "OCDMA System Using Two Code Keying Encryption Introducing a SOA Based CMUX And CDEMUX Over a WDM System." AIUB Journal of Science and Engineering (AJSE) 18, no. 1 (May 31, 2019): 11–17. http://dx.doi.org/10.53799/ajse.v18i1.17.

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This paper introduces an Optical Code Division multiplexing (OCDMA) system using two code keying encryptions. In this paper proposed OCDMA system is designed using Semiconductor optical amplifiers (SOAs) which has nonlinear character and can implementor different logic functions. SOA based 2 × 1 Codeword Multiplexer (CMUX) is designed to multiplex the user data and a 1 × 2 Codeword DE Multiplexer (CDEMUX) to demodulate the user data. Then a multiple user access is provided using WDM system to design the whole OCDMA system. Transmission distance of 70 km is achieved with acceptable bit error rate and Q factor. Open eye diagram is also verified at the receiving end.

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17

Songnian Fu, Wen-De Zhong, P. P. Shum, and Chinlon Lin. "Frequency Multiplication of Microwave Signals by Self-Induced Nonlinear Polarization Rotation in Semiconductor Optical Amplifiers (SOAs)." IEEE Photonics Technology Letters 21, no. 15 (August 2009): 1081–83. http://dx.doi.org/10.1109/lpt.2009.2022634.

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18

Jang, Jun Yeong, Min Su Kim, Chang-Lin Li, and Tae Hee Han. "Power and Signal-to-Noise Ratio Optimization in Mesh-Based Hybrid Optical Network-on-Chip using Semiconductor Optical Amplifiers." Applied Sciences 9, no. 6 (March 25, 2019): 1251. http://dx.doi.org/10.3390/app9061251.

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To address the performance bottleneck in metal-based interconnects, hybrid optical network-on-chip (HONoC) has emerged as a new alternative. However, as the size of the HONoC grows, insertion loss and crosstalk noise increase, leading to excessive laser source output power and performance degradation. Therefore, we propose a low-power scalable HONoC architecture by incorporating semiconductor optical amplifiers (SOAs). An SOA placement algorithm is developed considering insertion loss and crosstalk noise. Furthermore, we establish a worst-case crosstalk noise model of SOA-enabled HONoC and induce optimized SOA gains with respect to power consumption and performance, respectively. Extensive simulations for worst-case signal-to-noise ratio (SNR) and power consumption are conducted under various traffic patterns and different network sizes. Simulation results show that the proposed SOA-enabled HONoC architecture and the associated algorithm help sustain the performance as network size increases without additional laser source power.

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19

Lee, Gi Hyen, Soyeon Ahn, Jinhwa Gene, and Min Yong Jeon. "1.1-µm Band Extended Wide-Bandwidth Wavelength-Swept Laser Based on Polygonal Scanning Wavelength Filter." Sensors 21, no. 9 (April 27, 2021): 3053. http://dx.doi.org/10.3390/s21093053.

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We demonstrated a 1.1-µm band extended wideband wavelength-swept laser (WSL) that combined two semiconductor optical amplifiers (SOAs) based on a polygonal scanning wavelength filter. The center wavelengths of the two SOAs were 1020 nm and 1140 nm, respectively. Two SOAs were connected in parallel in the form of a Mach-Zehnder interferometer. At a scanning speed of 1.8 kHz, the 10-dB bandwidth of the spectral output and the average power were approximately 228 nm and 16.88 mW, respectively. Owing to the nonlinear effect of the SOA, a decrease was observed in the bandwidth according to the scanning speed. Moreover, the intensity of the WSL decreased because the oscillation time was smaller than the buildup time. In addition, a cholesteric liquid crystal (CLC) cell was fabricated as an application of WSL, and the dynamic change of the first-order reflection of the CLC cell in the 1-µm band was observed using the WSL. The pitch jumps of the reflection band occurred according to the electric field applied to the CLC cell, and instantaneous changes were observed.

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WANG, LI, MUGUANG WANG, SHUQIN LOU, and WEI-PING HUANG. "PATTERN EFFECT MITIGATION IN HIGH-SPEED ALL-OPTICAL SWITCH BASED ON CROSS-GAIN MODULATION IN TWO SOAs WITH DIFFERENT BANDGAPS." Modern Physics Letters B 24, no. 19 (July 30, 2010): 2031–40. http://dx.doi.org/10.1142/s0217984910024493.

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Two cascaded semiconductor optical amplifiers (SOAs) with different bandgaps are proposed as an all-optical switch based on cross-gain modulation (XGM) to reduce the pattern effect inflicted by a carrier-lifetime-related long-lived gain recovery tail. We numerically investigate the device gain recovery dynamics in such setup excited by 100 Gbit/s pseudorandom return-to-zero control signal at 1520 nm for different probe wavelengths. The preliminary simulation results indicate that the pattern effect in a SOA in which control pulses are localized in gain region can be reduced by a concatenated SOA in which control pulses are situated in the absorption region. This compensation principle is always valid when the bit rate is beyond 100 Gbit/s.

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21

Goki, Imran, Porzi, Toccafondo, Fresi, Cavaliere, and Potì. "Lossless WDM PON Photonic Integrated Receivers Including SOAs." Applied Sciences 9, no. 12 (June 15, 2019): 2457. http://dx.doi.org/10.3390/app9122457.

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The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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Lee, Gi Hyen, Soyeon Ahn, Min Su Kim, Sang Won Lee, Ji Su Kim, Byeong Kwon Choi, Srinivas Pagidi, and Min Yong Jeon. "Output Characterization of 220 nm Broadband 1250 nm Wavelength-Swept Laser for Dynamic Optical Fiber Sensors." Sensors 22, no. 22 (November 16, 2022): 8867. http://dx.doi.org/10.3390/s22228867.

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Broadband wavelength-swept lasers (WSLs) are widely used as light sources in biophotonics and optical fiber sensors. Herein, we present a polygonal mirror scanning wavelength filter (PMSWF)-based broadband WSL using two semiconductor optical amplifiers (SOAs) with different center wavelengths as the gain medium. The 10-dB bandwidth of the wavelength scanning range with 3.6 kHz scanning frequency was approximately 223 nm, from 1129 nm to 1352 nm. When the scanning frequency of the WSL was increased, the intensity and bandwidth decreased. The main reason for this is that the laser oscillation time becomes insufficient as the scanning frequency increases. We analyzed the intensity and bandwidth decrease according to the increase in the scanning frequency in the WSL through the concept of saturation limit frequency. In addition, optical alignment is important for realizing broadband WSLs. The optimal condition can be determined by analyzing the beam alignment according to the position of the diffraction grating and the lenses in the PMSWF. This broadband WSL is specially expected to be used as a light source in broadband distributed dynamic FBG fiber-optic sensors.

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23

Liu, Lin, Craig Michie, Anthony E. Kelly, and Ivan Andonovic. "Detailed Theoretical Model for Adjustable Gain-Clamped Semiconductor Optical Amplifier." International Journal of Optics 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/764084.

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The adjustable gain-clamped semiconductor optical amplifier (AGC-SOA) uses two SOAs in a ring-cavity topology: one to amplify the signal and the other to control the gain. The device was designed to maximize the output saturated power while adjusting gain to regulate power differences between packets without loss of linearity. This type of subsystem can be used for power equalisation and linear amplification in packet-based dynamic systems such as passive optical networks (PONs). A detailed theoretical model is presented in this paper to simulate the operation of the AGC-SOA, which gives a better understanding of the underlying gain clamping mechanics. Simulations and comparisons with steady-state and dynamic gain modulation experimental performance are given which validate the model.

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Rodriguez-Colina, Enrique, Michael Pascoe-Chalke, and Miguel Lopez-Guerrero. "Performance Trade-Offs for Wavelength Striping Optical Switching Using a Novel Star Architecture." Advances in Optical Technologies 2016 (February 11, 2016): 1–12. http://dx.doi.org/10.1155/2016/1875357.

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This work describes various performance trade-offs that arise from the use of a technique for optical switching under various network topologies. Such switching operation can be summarized as follows: (a) user data are divided into fixed-length fragments, (b) each fragment is assigned to a different wavelength, and (c) all wavelengths are simultaneously switched to the egress links. This concept of dividing user data into several wavelengths to be simultaneously switched is called wavelength striping and its purpose is to reduce latency and increase throughput for short distance interconnects. We depart from previous work where a building block implementing this basic switching function has been built around semiconductor optical amplifiers (SOAs). In this paper, we investigate diverse trade-offs that arise from the use of this switching approach in different network topologies. One of the main issues addressed in this paper is the relation between cascadability and bit error rate (BER). In this case, our results indicate that a switch fabric can cascade up to five stages without exceeding a BER of 10−9 and without incurring in power budget problems. We also show that the performance degradation, introduced by cascading SOAs, can be compensated with a star interconnect architecture that is introduced. Other issues addressed in this paper are the effect of scalability on cost and the effect of latency on TCP performance and reliability.

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Nehrir, Amin R., Kevin S. Repasky, John L. Carlsten, Michael D. Obland, and Joseph A. Shaw. "Water Vapor Profiling Using a Widely Tunable, Amplified Diode-Laser-Based Differential Absorption Lidar (DIAL)." Journal of Atmospheric and Oceanic Technology 26, no. 4 (April 1, 2009): 733–45. http://dx.doi.org/10.1175/2008jtecha1201.1.

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Abstract A differential absorption lidar (DIAL) instrument for automated profiling of water vapor in the lower troposphere has been designed, tested, and is in routine operation at Montana State University. The laser transmitter for the DIAL instrument uses a widely tunable external cavity diode laser (ECDL) to injection seed two cascaded semiconductor optical amplifiers (SOAs) to produce a laser transmitter that accesses the 824–841-nm spectral range. The DIAL receiver utilizes a 28-cm-diameter Schmidt–Cassegrain telescope; an avalanche photodiode (APD) detector; and a narrowband optical filter to collect, discriminate, and measure the scattered light. A technique of correcting for the wavelength-dependent incident angle upon the narrowband optical filter as a function of range has been developed to allow accurate water vapor profiles to be measured down to 225 m above the surface. Data comparisons using the DIAL instrument and collocated radiosonde measurements are presented demonstrating the capabilities of the DIAL instrument.

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Shi, Bin, Nicola Calabretta, and Ripalta Stabile. "Emulation and modelling of semiconductor optical amplifier-based all-optical photonic integrated deep neural network with arbitrary depth." Neuromorphic Computing and Engineering 2, no. 3 (September 1, 2022): 034010. http://dx.doi.org/10.1088/2634-4386/ac8827.

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Abstract We experimentally demonstrate the emulation of scaling of the semiconductor optical amplifier (SOA) based integrated all-optical neural network in terms of number of input channels and layer cascade, with chromatic input at the neuron and monochromatic output conversion, obtained by exploiting cross-gain-modulation effect. We propose a noise model for investigating the signal degradation on the signal processing after cascades of SOAs, and we validate it via experimental results. Both experiments and simulations claim that the all-optical neuron (AON), with wavelength conversion as non-linear function, is able to compress noise for noisy optical inputs. This suggests that the use of SOA-based AON with wavelength conversion may allow for building neural networks with arbitrary depth. In fact, an arbitrarily deep neural network, built out of seven-channel input AONs, is shown to guarantee an error minor than 0.1 when operating at input power levels of −20 dBm/channel and with a 6 dB input dynamic range. Then the simulations results, extended to an arbitrary number of input channels and layers, suggest that by cascading and interconnecting multiple of these monolithically integrated AONs, it is possible to build a neural network with 12-inputs/neuron 12 neurons/layer and arbitrary depth scaling, or an 18-inputs/neuron 18-neurons/layer for single layer implementation, to maintain an output error <0.1. Further improvement in height scalability can be obtained by optimizing the input power.

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27

Martín González, Laura, Sjoerd van der Heide, Xuwei Xue, John van Weerdenburg, Nicola Calabretta, Chigo Okonkwo, Josep Fàbrega, and Michela Svaluto Moreolo. "Programmable Adaptive BVT for Future Optical Metro Networks Adopting SOA-Based Switching Nodes." Photonics 5, no. 3 (August 13, 2018): 24. http://dx.doi.org/10.3390/photonics5030024.

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Adaptive Sliceable-Bandwidth Variable Transceivers (S-BVTs) are key enablers for future optical networks. In particular, those based on Discrete MultiTone (DMT) modulation and Direct Detection (DD) can be considered a flexible solution suitable to address the cost efficiency requirement of optical metro networks. In this paper, we propose to use a cost-effective S-BVT option/implementation in optical metro networks adopting switching nodes based on Semiconductor Optical Amplifier (SOA) technology. Bit loading (BL) and power loading (PL) algorithms are applied to the Digital Signal Processing (DSP) modules, to maximize the performance and/or the capacity as well as enhance the flexibility and adaptability of the system. Our analysis considers switching nodes based on SOAs with and without filtering elements and fiber spans of 25 km. We present the results up to 100 km, with and without SOA-based nodes. Firstly, we analyze the adaptive BVT transmission using the Margin Adaptive (MA) BL/PL algorithm at a fixed bit rate of 28 Gb/s. The possibility of controlling the SOAs current is a key factor to face the transmission impairments due to the fiber and the filtering elements. We also analyze the system considering Rate Adaptive (RA) transmission at a fixed target Bit Error Rate (BER) of 3.8 × 10−3, showing that a maximum capacity above 34 Gb/s can be achieved for a single span of 25 km. Although the cascading of filtering elements still constitutes a limiting factor, we show that an improvement of the net bit rate performance can be obtained thanks to the combined use of BVT and SOA technology at the switching nodes, resulting in a promising approach for designing future optical metro networks.

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Chen, Lanlan. "Secure Data Sequence Recognition of All-Optical High-Speed Network Using Semiconductor Optical Amplifier." Journal of Nanoelectronics and Optoelectronics 16, no. 10 (October 1, 2021): 1667–74. http://dx.doi.org/10.1166/jno.2021.3124.

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Semiconductor optical amplifier (SOA) has nonlinear optical effect and integration advantages, and is widely used in all-optical logic gates. Hence, it is used in the identification of all-optical high-speed network security data sequences. First, the SOA model is established and then simplified based on the existing model. On this basis, the identification model of all-optical high-speed network security data sequence is established, and the concept of integrated turbo-switch is introduced. The structure of the turbo-switch is analyzed. Then, an integrated turbo-switch architecture based on SOA-Mach Zehnder interferometer (MZI) is proposed, and its performance is verified by simulation. A data sequence recognition method for all-optical high-speed network security is proposed based on the integrated acceleration switch, and the difficulty of result recognition is analyzed. The simulation results of integrated turbo-switch show that when 1550 nm light passes through MZI, the interference can be almost completely cancelled, and the corresponding phase difference of 1538 nm light is less than 3 radians, that is, some light can pass through MZI. After the bias current of SOA of upper and lower arms of SOA-MZI is properly adjusted, MZI can play the function of tunable filter. Adjusting the bias current of SOA1 and SOA2 in the turbo-switch can control the “overshoot” program in the gain recovery curve, make SOA2 in a saturated working state, optimize the gain recovery curve, and improve the SOArelated mode effect, so that the turbo-switch can also output a more stable waveform under continuous “1” input. The recognition difficulty test shows that the target sequence after the cycle and the data sequence to be recognized are used for the “Exclusive NOR” operation, and the “AND gate” is added to realize the data sequence recognition and reduce the recognition difficulty.

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29

Eisenstein, G. "Semiconductor optical amplifiers." IEEE Circuits and Devices Magazine 5, no. 4 (July 1989): 25–30. http://dx.doi.org/10.1109/101.29899.

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30

Olsson, N. A. "Semiconductor optical amplifiers." Proceedings of the IEEE 80, no. 3 (March 1992): 375–82. http://dx.doi.org/10.1109/5.135354.

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31

Amarasinghe, Dimali, Arvydas Ruseckas, Graham A. Turnbull, and Ifor D. W. Samuel. "Organic Semiconductor Optical Amplifiers." Proceedings of the IEEE 97, no. 9 (September 2009): 1637–50. http://dx.doi.org/10.1109/jproc.2009.2023250.

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32

Mehra, Rekha. "Optical computing with semiconductor optical amplifiers." Optical Engineering 51, no. 8 (July 25, 2012): 080901. http://dx.doi.org/10.1117/1.oe.51.8.080901.

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33

COSTANZO-CASO, PABLO A., YIYE JIN, SERGIO GRANIERI, and AZAD SIAHMAKOUN. "OPTICAL BISTABILITY IN A NONLINEAR SOA-BASED FIBER RING RESONATOR." Journal of Nonlinear Optical Physics & Materials 20, no. 03 (September 2011): 281–92. http://dx.doi.org/10.1142/s021886351100608x.

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A novel optical inverted bistable switch based on a nonlinear fiber ring resonator (FRR) containing a semiconductor optical amplifier (SOA) has been analyzed and experimentally demonstrated. Optical bistability is obtained due to the transmission characteristics of the resonator and the SOA's gain characteristics. A complete theoretical analysis and supporting simulations are presented. A prototype is demonstrated using commercial optical components. Experimental results show switching performance with falling times lower than 10 ns.

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34

Akiyama, T., M. Sugawara, and Y. Arakawa. "Quantum-Dot Semiconductor Optical Amplifiers." Proceedings of the IEEE 95, no. 9 (September 2007): 1757–66. http://dx.doi.org/10.1109/jproc.2007.900899.

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35

Dutta, N. K., Q. Wang, G. Zhu, J. Jaques, A. B. Piccirilli, and J. Leuthold. "Semiconductor Optical Amplifiers-Functional Applications." Journal of Optics 33, no. 4 (December 2004): 197–219. http://dx.doi.org/10.1007/bf03354765.

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36

Ding, Ying, Qiang Kan, Jun-ling Wang, Jiao-qing Pan, Fan Zhou, Wei-xi Chen, and Wei Wang. "Broad-band semiconductor optical amplifiers." Journal of Luminescence 122-123 (January 2007): 208–11. http://dx.doi.org/10.1016/j.jlumin.2006.01.094.

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37

Jiang, L. A., E. P. Ippen, U. Feiste, S. Diez, E. Hilliger, C. Schmidt, and H. G. Weber. "Sampling pulses with semiconductor optical amplifiers." IEEE Journal of Quantum Electronics 37, no. 1 (2001): 118–26. http://dx.doi.org/10.1109/3.892733.

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38

Morris, R. A., P. A. Goud, and C. G. Englefield. "Gain stabilization of semiconductor optical amplifiers." Canadian Journal of Electrical and Computer Engineering 16, no. 4 (October 1991): 140–42. http://dx.doi.org/10.1109/cjece.1991.6591702.

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39

Asghari, M., I. H. White, and R. V. Penty. "Wavelength conversion using semiconductor optical amplifiers." Journal of Lightwave Technology 15, no. 7 (July 1997): 1181–90. http://dx.doi.org/10.1109/50.596964.

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40

Li, X., M. J. Adams, D. Alexandropoulos, and I. F. Lealman. "Gain recovery in semiconductor optical amplifiers." Optics Communications 281, no. 13 (July 2008): 3466–70. http://dx.doi.org/10.1016/j.optcom.2008.02.032.

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41

ADAMS, M. J. "OPTICAL BISTABILITY IN SEMICONDUCTOR LASER AMPLIFIERS." Le Journal de Physique Colloques 49, no. C2 (June 1988): C2–57—C2–61. http://dx.doi.org/10.1051/jphyscol:1988213.

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42

Adams, M. J., J. V. Collins, and I. D. Henning. "Analysis of semiconductor laser optical amplifiers." IEE Proceedings J Optoelectronics 132, no. 1 (1985): 58. http://dx.doi.org/10.1049/ip-j.1985.0012.

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43

Dente, G. C., and M. L. Tilton. "Modeling broad-area semiconductor optical amplifiers." IEEE Journal of Quantum Electronics 29, no. 1 (1993): 76–88. http://dx.doi.org/10.1109/3.199247.

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44

Sharfin, W. F., and M. Dagenais. "Optical switching of semiconductor laser amplifiers." Applied Physics B Photophysics and Laser Chemistry 46, no. 1 (May 1988): 35–41. http://dx.doi.org/10.1007/bf00698652.

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45

KIRIHARA, TOSHIO, and HIROAKI INOUE. "InP-BASED OPTICAL SWITCH ARRAYS USING SEMICONDUCTOR OPTICAL AMPLIFIERS." International Journal of High Speed Electronics and Systems 07, no. 01 (March 1996): 85–124. http://dx.doi.org/10.1142/s0129156496000050.

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We present a review of optical switch arrays using semiconductor optical amplifiers. The combination of active and passive switching components and of gate and booster amplifiers is discussed from the viewpoint of the relation between their designs and switching characteristics: loss compensation, crosstalk, spontaneous emission noise, and gain saturation. Demonstrations of carrier-injection type single-slip structure ( S 3) switch with traveling amplifier (COSTA) were reviewed to illustrate the device integration techniques and their potential usefulness in large-scale photonic switching systems even in the presence of spontaneous emission from integrated optical amplifiers.

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46

Khaleghi, Hamidreza, Ammar Sharaiha, Thierry Rampone, Pascal Morel, and Mikael Guegan. "Semiconductor Optical Amplifiers in Coherent Optical-OFDM Systems." IEEE Photonics Technology Letters 24, no. 7 (April 2012): 560–62. http://dx.doi.org/10.1109/lpt.2012.2183346.

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47

Spiekman, Leo H. "Semiconductor optical amplifiers for reconfigurable optical networks (Invited)." Journal of Optical Networking 6, no. 11 (2007): 1247. http://dx.doi.org/10.1364/jon.6.001247.

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48

Durhuus, T., B. Mikkelsen, C. Joergensen, S. Lykke Danielsen, and K. E. Stubkjaer. "All-optical wavelength conversion by semiconductor optical amplifiers." Journal of Lightwave Technology 14, no. 6 (June 1996): 942–54. http://dx.doi.org/10.1109/50.511594.

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49

Peppas, Kostas P., Anthony C. Boucouvalas, Zabih Ghassemloy, Mohhamad-Ali Khalighi, Kostas Yiannopoulos, and Nikos C. Sagias. "Semiconductor optical amplifiers for underwater optical wireless communications." IET Optoelectronics 11, no. 1 (February 1, 2017): 15–19. http://dx.doi.org/10.1049/iet-opt.2016.0010.

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50

KANG, K. I., I. GLESK, and P. R. PRUCNAL. "ULTRAFAST OPTICAL TIME DEMULTIPLEXERS USING SEMICONDUCTOR OPTICAL AMPLIFIERS." International Journal of High Speed Electronics and Systems 07, no. 01 (March 1996): 125–51. http://dx.doi.org/10.1142/s0129156496000062.

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The operating principle of the utilization of resonant optical nonlinearities in recently demonstrated ultra-fast all-optical interferometric switching devices is presented. Optimum switching windows expected from these devices are investigated with a simple theoretical analysis. The experimental results of these devices are presented along with the nonlinear optical properties of a semiconductor optical amplifier. The information from the experimental results of the nonlinear optical properties are used to address a problem associated with a saturation of the semiconductor optical amplifier by an incoming ultra-high bit rate data stream. We also discuss the advantages and disadvantages in different operation modes — same or different wavelengths for the control and data signals. Finally, we discuss the relative advantages and disadvantages among these devices.

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