Dissertations / Theses on the topic 'Semiconductor optical amplifiers (SOAs)'
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Ultanir, Erdem. "STABLE SPATIAL SOLITONS IN SEMICONDUCTOR OPTICAL AMPLIFIERS." Doctoral diss., University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4468.
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A spatial soliton is a shape invariant self guided beam of light or a self induced waveguide. Spatial solitons appear as a result of the balance of diffraction and nonlinear focusing in asystem. They have been observed in many different conservative media in the last couple ofyears. Solitons are ubiquitous, because of the probability of using their interactions in opticaldata processing, communications etc. Up to now due to the power required to generate thesolitons, and the response times of the soliton supporting media, these special waves of naturecould not penetrate the applications arena. Semiconductors, with their resonant nonlinearities, arethought to be ideal candidates for fast switching, low power spatial solitons. In this dissertation it is shown theoretically and experimentally that it is possible toobserve stable spatial solitons in a periodically patterned semiconductor optical amplifier(PPSOA). The solitons have unique beam profiles that change only with system parameters, likepumping current, etc. Their coherent and incoherent interactions which could lead to all opticaldevices have been investigated experimentally and theoretically. The formation of filaments ormodulational instability has been studied theoretically and yielded analytical formulae forevaluating the filament gain and the maximum spatial frequencies in PPSOA devices. Furthermore, discrete array amplifiers have been analyzed numerically for discrete solitons, and the prospect of using multi peak discrete solitons as laser amplifiers is discussed.Ph.D.
Optics and Photonics
Optics and Photonics
Optics and Photonics
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Taki, Haidar. "On ultra-wideband over fiber transmission systems employing semiconductor optical amplifiers." Thesis, Brest, 2017. http://www.theses.fr/2017BRES0071/document.
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La technologie Ultra WideBand (UWB) sur fibre est une solution prometteuse pour répondre aux enjeux des futurs réseaux de communication WLAN/WPAN. Les caractéristiques de la fibre, incluant son énorme bande passante, offrent la possibilité d'une bonne qualité de service à longue portée. La propagation sans-fil UWB doit être réalisée sous des contraintes de densité spectrale de puissance particulières, imposées par l'autorité de régulation (FCC pour les Etats-Unis). La nouveauté de notre travail provient de I' exploitation des avantages d'un amplificateur optique à semi-conducteurs (SOA) afin d'obtenir une extension de portée à un coût et une complexité limités. Cependant, les effets non linéaires et le bruit d'émission spontanée amplifiée (ASE), intrinsèques à ce type de composant, sont susceptibles de dégrader la performance du système. La réduction de ces effets indésirables a donc été d'une importance centrale dans cette étude. Les non-linéarités du SOA ont été compensées en appliquant une solution de pré-distorsion analogique des formes d'ondes électriques. Un traitement basé sur phaser a également été proposé pour réduire simultanément I' influence de I'ASE et linéariser les caractéristiques du SOA, grâce à des opérations de chirping réparties entre l'émetteur et le récepteur. Avec la transmission Impulse Radio, en raison des propriétés temporelles des formats de modulation, des raies spectrales apparaissent, ce qui peut violer la limite FCC ou réduire I' efficacité énergétique. Une nouvelle technique de randomisation de formes d'ondes a été étudiée, qui s'est révélée efficace pour supprimer ces pics spectraux. Les trois approches ont montré un grand potentiel avec les formats On Off Keying et Pulse Position Modulation, à longue portée optique. Les performances d'une modulation différentielle Chaos Shift Keying ont finalement été examinées; une probabilité d'erreur inférieure a été obtenue expérimentalement en comparaison avec d'autres modulations non cohérentesUltra WideBand (UWB) over fiber is a promising technology for meeting the demands of future wireless local-area networks (WLANs) and wireless personal-area networks (WPANs). Thanks to the enormous bandwidth and fiber characteristics, a high communication quality may be established at long reach. UWB wireless propagation must be achieved with special power and spectral constraints fixed by the regulatory bodies (e.g. US Federal Communication Commission). The novelty of our work originates from exploiting the benefits of a Semiconductor Optical Amplifier (SOA) so as to get a reach extension at limited cost and complexity. However, the inherent nonlinear effects and Amplified Spontaneous Emission (ASE) noise associated to such device may affect the system performance.Overcoming these impairments has been of central importance in this study. SOA nonlinearities have been mitigated by applying analog pre-distortion in electrical domain. Phaser-based processing was also proposed to simultaneously reduce ASE influence and linearize SOA characteristics, thanks to up/down chirping performed on the transmitter/receiver sides. With Impulse Radio UWB transmission, due to the time properties of modulation patterns, discrete lines arise in the corresponding spectrum, which may violate FCC limit or reduce the power efficiency. A new shape randomization technique has been investigated, which proved to be effective in suppressing these spectral spikes. The three approaches have shown a great potential with On Off Keying and Pulse Position Modulation formats at long optical reach.The performance of Differential Chaos Shift Keying was finally examined in the over fiber system, a lower error probability was experimentally achieved in comparison with other non-coherent modulations
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Dionísio, Rogério Pais. "Advanced optical modulation and format conversion." Doctoral thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/12850.
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Doutoramento em Engenharia ElectrotécnicaOver the years, the increased search and exchange of information lead to an increase of traffic intensity in todays optical communication networks. Coherent communications, using the amplitude and phase of the signal, reappears as one of the transmission techniques to increase the spectral efficiency and throughput of optical channels. In this context, this work present a study on format conversion of modulated signals using MZI-SOAs, based exclusively on all- optical techniques through wavelength conversion. This approach, when applied in interconnection nodes between optical networks with different bit rates and modulation formats, allow a better efficiency and scalability of the network. We start with an experimental characterization of the static and dynamic properties of the MZI-SOA. Then, we propose a semi-analytical model to describe the evolution of phase and amplitude at the output of the MZI-SOA. The model’s coefficients are obtained using a multi-objective genetic algorithm. We validate the model experimentally, by exploring the dependency of the optical signal with the operational parameters of the MZI-SOA. We also propose an all-optical technique for the conversion of amplitude modulation signals to a continuous phase modulation format. Finally, we study the potential of MZI-SOAs for the conversion of amplitude signals to QPSK and QAM signals. We show the dependency of the conversion process with the operational parameters deviation from the optimal values. The technique is experimentally validated for QPSK modulation.
Nos últimos anos, a crescente procura e troca de informação tem levado ao aumento de tráfego nas redes de comunicação óticas atuais. As comunicações coerentes, com recurso à amplitude e fase do sinal, ressurgem como uma das técnicas de transmissão capazes de aumentar a eficiência espectral e o rendimento dos canais óticos. Nesse âmbito, este trabalho apresenta um estudo sobre a conversão de formatos de modulação de sinais, usando técnicas exclusivamente no domínio ótico, através de conversão de comprimento de onda, com base no MZI-SOA. Esta técnica, aplicada em nós óticos que interligam redes óticas com débitos binários distintos, permite uma maior escalabilidade e eficiência da rede. A tese começa por apresentar uma caracterização experimental detalhada das propriedades estáticas e dinâmicas do MZI-SOA. É depois proposto um modelo semi-analítico que descreve a evolução da amplitude e fase do sinal ótico à saída do MZI-SOA. Os coeficientes do modelo são obtidos recorrendo a um algoritmo genético multiobjectivo. O modelo é validado experimentalmente, explorando a dependência do sinal ótico com os parâmetros operacionais do MZI- SOA. Segue-se a proposta de uma técnica de conversão de formato de modulação de amplitude para modulação de fase contínua. Finalmente, é feito um estudo das potencialidades do MZI-SOA para conversão de formato de modulação de amplitude para modulação QPSK e QAM. Mostra-se a dependência da constelação do sinal com o desvio dos parâmetros operacionais, em torno do valor ótimo. A técnica é validada experimentalmente para modulação QPSK.
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Wen, Pengyue. "Vertical cavity semiconductor optical amplifiers /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3070991.
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Kelly, Anthony Edward. "Optimisation of semiconductor optical amplifiers for optical networks." Thesis, University of Strathclyde, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366966.
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Carbó, Meseguer Alexis. "Semiconductor optical amplifiers for ultra-wideband optical systems." Thesis, Evry, Institut national des télécommunications, 2018. http://www.theses.fr/2018TELE0010/document.
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Au cours des dernières décennies, le monde a subi une révolution majeure qui a profondément affecté comment on utilise les réseaux de communication. De nouveaux services et applications ont été apparus, tels que les réseaux sociaux, les jeux en ligne ou le streaming en direct, qui exigent une augmentation constante de la capacité des systèmes optiques. La motivation de ce travail est donc d'étudier la mise en œuvre d'un nouvel amplificateur SOA à très large bande avec une bande passante de plus de 100 nm afin d’étendre la capacité du système. L'utilisation de l'amplification SOA change complètement le paradigme dans la conception d'un système optique puisque toutes les dégradations ajoutées par la SOA doivent être considérées. Ainsi, la recherche d'un modèle analytique ou numérique capable de caractériser la nature non linéaire de ce dispositif est d'abord étudiée. Ensuite, on montre comment un SOA bien conçu peut non seulement amplifier un signal à large bande, mais également surmonter certains des principaux inconvénients du SOA devant EDFA. Finalement, on évalue la capacité de ce nouveau UWB SOA pour les applications d'interconnexion de centres de données avec deux expériences en transmettant jusqu'à 115 Tbps de données dans une liaison à bande passante continue de 100 nm sur 100 km de fibre et en testant la stabilité du système avec cartes de ligne en temps réelle entre deux points de présence (POP) de Facebook déployés dans la région parisienneOver the last few decades the world has undergone a major revolution that has deeply affected the way we use communication networks. New services and applications have appeared demanding a constant increase of the channel capacity. In this period, optical systems have been upgraded at pair with advanced signal processing techniques which have permitted the increase of the spectral efficiency approaching the system capacity to the fundamental limit. It is because is becoming extremely challenging to keep growing the system capacity by this means. In this work, an orthogonal direction is studied to further increase the fibre capacity: extending the optical bandwidth. With this purpose, the use of semiconductor optical amplifiers (SOA) is investigated to be implemented in future ultra-wideband (UWB) systems. The use of SOA amplification changes completely the paradigm in the design of an optical system since all the impairments added by the SOA must be considered. In this work, we assess the reservoir model, a simple yet powerful model, to analyze numerically the nonlinear regime of the SOA for WDM systems. We also show for the first that the linewidth enhancement factor of an SOA can be estimated with a coherent receiver. Finally, it is also studied how the correlation between channels degrades significantly the performance of the SOA and the inclusion of a decorrelation fibre is investigated. The conception of a UWB system is then studied. We characterize a novel ultra-wideband SOA developed by the French project CALIPSO which presents high gain in a 100-nm optical bandwidth with high output saturation power and 6-8 dB of noise figure. We analyze its nonlinear regime for WDM systems and we show for QPSK and 16 QAM modulation formats that the input saturation power can be overtaken by serveral dBs without important nonlinear penalty. On the other hand, a novel technique is studied to compensate fibre nonlinearities in UWB systems: the multicarrier multiplexing, which tries to exploit the concept of symbol rate optimization. Finally, we assess the capabilities of this novel UWB SOA for data-centre interconnection applications with two experiments transmitting up to 113 Tbps data troughput in a 100-nm continuous bandwidth link over 100 km of fibre and then testings is stability with real-time line cards between two points of presence (POP)of Facebook deployed in the Paris area
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Fews, Hayden Scott. "Multiwave mixing in semiconductor optical amplifiers." Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300912.
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Yao, Jianguo. "Optical switching using semiconductor laser amplifiers." Thesis, University of Essex, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260402.
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Annetts, Paul Julian. "Advanced applications of semiconductor optical amplifiers." Thesis, University of Bristol, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299275.
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Sosabowski, Jeremy. "Novel applications of semiconductor optical amplifiers." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613776.
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Constable, Julie Ann. "Semiconductor optical amplifiers for analogue applications." Thesis, University of Bath, 1993. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358046.
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Brenner, Tomas. "Monolithically integrated semiconductor optical amplifiers and optical mode adapters /." [S.l.] : [s.n.], 1994. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=10961.
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Vaughn, Mark Douglas. "Optical subcarrier multiplexed signal processing using semiconductor optical amplifiers." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/13327.
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Mankong, Ukrit. "Gain clamped semiconductor optical amplifiers for optical communications applications." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612028.
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Silveira, Tiago Gomes da. "All-optical processing systems based on semiconductor optical amplifiers." Doctoral thesis, Universidade de Aveiro, 2011. http://hdl.handle.net/10773/7028.
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Doutoramento em Engenharia ElectrotécnicaNesta tese investigam-se e desenvolvem-se dispositivos para processamento integralmente óptico em redes com multiplexagem densa por divisão no comprimento de onda (DWDM). O principal objectivo das redes DWDM é transportar e distribuir um espectro óptico densamente multiplexado com sinais de débito binário ultra elevado, ao longo de centenas ou milhares de quilómetros de fibra óptica. Estes sinais devem ser transportados e encaminhados no domínio óptico de forma transparente, sem conversões óptico-eléctrico-ópticas (OEO), evitando as suas limitações e custos. A tecnologia baseada em amplificadores ópticos de semicondutor (SOA) é promissora graças aos seus efeitos não-lineares ultra-rápidos e eficientes, ao potencial para integração, reduzido consumo de potência e custos. Conversores de comprimento de onda são o elemento óptico básico para aumentar a capacidade da rede e evitar o bloqueio de comprimentos de onda. Neste trabalho, são estudados e analisados experimentalmente métodos para aumentar a largura de banda operacional de conversores de modulação cruzada de ganho (XGM), a fim de permitir a operação do SOA para além das suas limitações físicas. Conversão de um comprimento de onda, e conversão simultânea de múltiplos comprimentos de onda são testadas, usando interferómetros de Mach-Zehnder com SOA. As redes DWDM de alto débito binário requerem formatos de modulação optimizados, com elevada tolerância aos efeitos nefastos da fibra, e reduzida ocupação espectral. Para esse efeito, é vital desenvolver conversores integramente ópticos de formatos de modulação, a fim de permitir a interligação entre as redes já instaladas, que operam com modulação de intensidade, e as redes modernas, que utilizam formatos de modulação avançados. No âmbito deste trabalho é proposto um conversor integralmente óptico de formato entre modulação óptica de banda lateral dupla e modulação óptica de banda lateral residual; este é caracterizado através de simulação e experimentalmente. Adicionalmente, é proposto um conversor para formato de portadora suprimida, através de XGM e modulação cruzada de fase. A interligação entre as redes de transporte com débito binário ultra-elevado e as redes de acesso com débito binário reduzido requer conversão óptica de formato de impulso entre retorno-a-zero (RZ) e não-RZ. São aqui propostas e investigadas duas estruturas distintas: uma baseada em filtragem desalinhada do sinal convertido por XGM; uma segunda utiliza as dinâmicas do laser interno de um SOA com ganho limitado (GC-SOA). Regeneração integralmente óptica é essencial para reduzir os custos das redes. Dois esquemas distintos são utilizados para regeneração: uma estrutura baseada em MZI-SOA, e um método no qual o laser interno de um GC-SOA é modulado com o sinal distorcido a regenerar. A maioria dos esquemas referidos é testada experimentalmente a 40 Gb/s, com potencial para aplicação a débitos binários superiores, demonstrado que os SOA são uma tecnologia basilar para as redes ópticas do futuro.
This thesis investigates and develops all-optical processing devices for wavelength division multiplexing networks (DWM) of the future. The ultimate goal of optical networks is to transport and deliver a densely multiplexed spectrum, populated by ultra-high bit rate signals over hundreds or thousands of kilometers of optical fiber. Such signals should be transported and routed transparently in the optical domain, without recurring to optic-electro-optic (OEO) conversions, avoiding its limitations and costs. Semiconductor optical amplifier (SOA) based technology is a promising building block due to its inherent ultra-fast and efficient non-linear effects, potential for integration, low power consumption and cost. Wavelength converters are the basic optical functionality to increase the network throughput and avoid wavelength blocking. Methods to increase the operation bandwidth of cross-gain modulation (XGM) converters are studied and experimentally assessed to enable operation beyond the physical constraints of SOA. Single and multi-wavelength conversion exploiting crossphase modulation (XPM) in Mach-Zehnder interferometer with semiconductor optical amplifiers (MZI-SOA) is tested. High bit rate DWDM networks require optimized modulation formats with enhanced tolerance to fiber impairments and reduced spectral tolerance. As a consequence, it is crucial to develop all-optical modulation formats between legacy on-off-keying networks and networks employing advanced modulation formats. An all-optical format converter between optical double sideband (ODSB) and optical vestigial sideband (OVSB) based on SOA self-phase modulation is proposed and thoroughly characterized by simulations and experimental tests. A converter, which uses a mix of XGM and XPM to allow simultaneous pulse and modulation format conversion to the carrier suppressed format, is proposed. The interface between ultra-high bit rate transport networks and lower bit rate access networks requires optical pulse format conversions between return-tozero (RZ) and non-return-to-zero (NRZ). Two different structures are proposed and investigated. The first is based on detuned filtering of XPM converted signal; while the second uses the dynamics of the internal laser of a gainclamped SOA. All-optical regeneration is one of the most sought functionalities to reduce network costs. Regeneration is achieved in this work through two simple setups: a MZI-SOA based structure, and a method in which the internal laser from a GC-SOA is modulated with the input distorted signal. Most applications are experimentally validated at 40 Gb/s, with potential for even higher bit rates, demonstrating that SOA can be one of the key elements for the next generation of optical networks.
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Liu, Lin. "Numerical study of semiconductor optical amplifiers for passive optical networks." Thesis, University of Strathclyde, 2013. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=20833.
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The motivation of this thesis is to better understand the characteristics of Semiconductor Optical Amplifiers (SOAs) and their use in the Passive Optical Networks (PON), particularly in packet equalisation. Following an introduction to physical principles and structure of SOAs the architecture of optical communication system especially PON is explained. The basic characteristics and key applications of SOAs are then discussed. In this study, the modelling of SOAs has been achieved at both system and device levels. In terms of high efficient system level SOA model, both co-propagation and counter-propagation models are employed to study the cross gain modulation of SOAs. The co-propagation system model has also been used to study the gain compression effect of SOAs. The direct modulation frequency response of a SOA is also investigated numerically. Alternatively, the detailed device level SOA model, which includes a wideband material gain coefficient taking the intraband relaxation effect into account and an efficiency-improved steady state algorithm, is proposed to study the DC characteristics of SOAs. Based on the detailed device level SOA model, the numerical model for the adjustable gain-clamped SOA (AGC-SOA) has been proposed to investigate both the steady state operation and the case where the gain of the AGC-SOA is dynamically modulated. Through theoretical analysis and experimental investigation, this study demonstrated that the gain of AGC-SOA would be dynamically modulated in response to the changes in packet amplitude in PONs.
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INAGANTI, MURALI. "DESIGN & SIMULATION OF INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER MODULATOR AND ITS USE IN WAVELENGTH DIVISION MULTIPLEXING PASSIVE OPTICAL ACCESS NETWORKS." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172863127.
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Song, Xibin. "Modelling and design of advanced semiconductor optical amplifiers." Thesis, University of York, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444693.
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McGeough, Jenny. "Semiconductor optical amplifiers to extend the reach of passive optical networks." Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3627/.
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This thesis reports on Semiconductor Optical Amplifiers (SOAs) and their use in optical communication systems; in particular improving the reach of Passive Optical Networks (PON). Following a comprehensive overview of the components of optical communication systems a PON is introduced and the standard of Gigabit-PON (GPON) explained. The concept of extending the reach of GPON through the introduction of amplification is presented and the business drivers of the telecommunication operators detailed. The physics of SOAs are described followed by the parameters used to characterise them. Carrier dynamics of SOAs are explained and the methods of measurement of the carrier dynamics are detailed including the spectrogram technique. This method simultaneously measures the gain and phase recovery which is desirable for applications in long range telecommunications which require unchirped signals with a fast response for both gain and phase. Parameters of commercially available SOAs are compared with the requirements to extend the reach of PONs. Following this the fabrication tolerances for SOAs insensitive to polarisation dependent gain (PDG) are modelled. Results from SOA modelling showed that the greatest contributing factor to PDG variation was the active region thickness error. In the context of bulk production this requires a realistic tolerance of ~10nm to maintain PDG of ~1dB. A polarisation insensitive high gain SOA is designed and experimentally measured. This SOA is measured in the context of GPON and shown to extend the reach of the current standard by a record margin of 28dB. The limitation of the improvement is attributed to gain modulation sourced intersymbol interference (the patterning effect). The patterning effect has been reported in literature to be reduced through the introduction of SOAs with an active region made from quantum dot (Qdot) material. A comparative study of the gain and phase recovery time and alpha factor of various dimensional SOAs is presented. Using the spectrogram method it is shown that reducing the power and increasing the bias of the SOA can reduce the carrier recovery time. A Qdot active region SOAs is shown to considerably reduce the gain recovery time compared to a bulk SOA of similar length. The active region of the Qdot SOA alludes to a faster carrier recovery time which could be beneficial to extend the reach of PONs without patterning. However as these are more difficult to fabricate in mass production it is unknown if they are a viable solution on a commercial scale. In the context of GPON a low alpha factor is desired for minimizing chirp and phase nonlinearities during amplification of short pulses. An alpha factor study is presented and the Qdot SOA was measured to have the lowest alpha factor which could be beneficial for reducing chirp in 10G-PON.
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Figueiredo, Rafael Carvalho 1982. "Ultrafast electro-optical switching of semiconductor optical amplifiers = modeling and experiments." [s.n.], 2015. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260748.
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Orientador: Evandro ConfortiTese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação
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Resumo: O desempenho de chaves eletro-ópticas baseadas em amplificadores ópticos a semicondutor (SOA), incluindo experimentos e simulações usando diferentes formatos de pulso na injeção de corrente elétrica, é apresentado. Quatro SOAs com características físicas distintas são analisados de acordo com seu comportamento de chaveamento. Em seguida, com o intuito de melhorar a resposta eletro-óptica dos SOAs, uma nova técnica de injeção de multi-impulso (MISIC ¿ Multi-Impulse Step Injected Current) é apresentada, alcançando tempo de subida ultrarrápido (115 ps) com baixo overshoot (< 30 %) e alto contraste óptico (30 dB). Os resultados obtidos podem permitir aplicações usando SOAs, por exemplo, como chaves eletro-ópticas em redes de Data Centers, reduzindo a latência de chaveamento entre os nós e compensando perdas por divisões do sinal. Além disso, os circuitos equivalentes para três diferentes SOAs (dois encapsulados e um sem encapsulamento) são propostos. Os modelos são validados através de comparações dos resultados numéricos e experimentais, com boa concordância. A modelagem é realizada em programas de análise de circuitos, exigindo pouco recurso computacional e possibilitando a inclusão dos elementos parasitas das montagens de micro-ondas e dos chips dos dispositivos
Abstract: The performance of electro-optical space switches based on semiconductor optical amplifiers (SOA), including experiments and simulations using different formats of the electrical current injection pulses, is presented. Four SOAs with distinct physical characteristics are analyzed according to their switching behavior. Then, to improve the SOAs¿ electro-optical response, a new Multi-Impulse Step Injected Current (MISIC) technique is presented, achieving ultrafast switching time (115 ps) with low overshoot (< 30 %) and high optical contrast (30 dB). The results obtained might enable SOA applications, for example, as electro-optical switches in Data Center Networks, reducing switching latency between nodes and compensating signal¿s splitting losses. Furthermore, the equivalent circuits for three different SOAs (one chip-on-carrier and two encapsulated) are proposed. The models are validated by comparisons involving numerical and experimental results, with good correspondence. The modeling is carried out using circuit analysis software, requiring small computational resources and enabling the inclusion of parasitic elements of SOA devices¿ chip and microwave mounts
Doutorado
Telecomunicações e Telemática
Doutor em Engenharia Elétrica
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Gauss, Veronica Andrea. "All-optical logic gates based on vertical cavity semiconductor optical amplifiers." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3386838.
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Thesis (Ph. D.)--University of California, San Diego, 2009.Title from first page of PDF file (viewed February 3, 2010). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Carns, Jennifer. "Semiconductor Optical Amplifier as a Phase Modulator for Short-Pulse Synthetic Aperture Ladar and Vibrometry." University of Dayton / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1335278035.
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Bollini, Laura. "Characterisation of semiconductor optical amplifiers through bias current modulation." Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407887.
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Evans, Ivan. "Nonlinearities and all-optical switching in semiconductor laser amplifiers." Thesis, University of Glasgow, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325471.
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Robinson, Bryan S. (Bryan Shawn) 1975. "All-optical switching using semiconductor amplifiers biased at transparency." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/28194.
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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.Includes bibliographical references (leaves 99-106).
by Bryan S. Robinson.
M.Eng.
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Hamamoto, Kiichi. "Active multi-mode-interferometer laser diodes and semiconductor optical amplifiers /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13822.
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Martin, Martin Raul. "Polarization Effects in Wavelength Converters based on Semiconductor Optical Amplifiers." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2007. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9638.
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Park, Jongwoon Huang W. P. "Modeling, simulation and performance optimization of wideband semiconductor optical amplifiers." *McMaster only, 2004.
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Zhang, Haijiang. "Nonlinear behavior and applications of vertical cavity semiconductor optical amplifiers." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2007. http://wwwlib.umi.com/cr/ucsd/fullcit?p3294741.
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Thesis (Ph. D.)--University of California, San Diego, 2007.Title from first page of PDF file (viewed November 21, 2007). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Kaunga-Nyirenda, Simeon. "Time-domain modelling of semiconductor optical amplifiers for nonlinear applications." Thesis, University of Nottingham, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.537627.
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Talli, Giuseppe. "Amplified spontaneous emission and gain dynamics in semiconductor optical amplifiers." Thesis, University of Essex, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.397730.
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Albrodt, Philipp. "Coherent beam combining of high-brightness tapered semiconductor optical amplifiers." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASO001.
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Des sources laser à semiconducteur avec une forte luminance sont requises pour de nombreuses applications directes et indirectes. L’augmentation de la puissance au-delà des limitations liées aux seuils de dommage se fait par des techniques de combinaison. La combinaison cohérente permet l’augmentation de la puissance tout en préservant les propriétés physiques des émetteurs individuels et est donc le concept idéal pour l’augmentation de la luminance. Les amplificateurs optiques avec une section évasée permettent d’atteindre des puissances élevées par émetteur tout en gardant une bonne qualité spatiale et sont donc les émetteurs idéaux pour l’augmentation de la luminance par combinaison cohérente.L’objectif de ce travail est le développement d’architectures simples et robustes pour la combinaison cohérente d’un petit nombre d’émetteurs de forte luminance. Différents designs d’amplificateurs à section évasée, développés et fabriqués par le Ferdinand-Braun-Institut (Berlin, Allemagne) dans le cadre d’une collaboration de recherche, sont évalués dans le contexte de la combinaison cohérente. La combinaison cohérente à forte puissance est étudiée en détail et démontrée en régime continu et impulsionnel. Le système développé, avec une puissance maximale de 23 W dans un faisceau présentant une qualité spatiale très élevée, se compare de manière avantageuse à d’autres expériences de combinaison cohérente de diodes laser.L’intérêt de la combinaison cohérente pour des applications nécessitant de fortes luminances est démontré par une augmentation de l’efficacité non-linéaire dans le cadre d’une expérience de doublement de fréquence. De plus, des architectures modulaires et compactes avec une très bonne stabilité sont développées et caractériséesAbstract Compact and efficient high-brightness semiconductor laser systems are demanded for direct and indirect applications. Power scaling beyond the limitations of material damage threshold requires combining multiple beams from independent emitters. Unlike other beam combining techniques, coherent beam combining (CBC) allows power and brightness scaling while maintaining all physical properties of the individual emitters and is therefore the ideal approach for brightness scaling. As they provide high powers with good beam quality, semi-conductor tapered lasers and amplifiers are a good starting block for power and brightness scaling in coherent beam combining setupsThis work targets the development of simple and robust coherent beam combining setups based on a few high power tapered amplifiers with optimized design. Different amplifier designs developed and fabricated within the framework of common research activities with the Ferdinand-Braun-Institut (Berlin, Germany) are investigated in details and tested in coherent beam combining architectures. Both continuous wave and pulsed quasi-continuous wave CBC is demonstrated and investigated at high powers. The achieved maximum power (23 W in QCW) in a nearly diffraction limited beam compares favourably to previous work on CBC with semiconductor emitters.The usefulness of CBC for applications requiring high brightness is demonstrated by an increased nonlinear conversion efficiency in single pass SHG setups. Furthermore, the work also targets the development of integrated modular setups with reduced footprint and improved stability
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Sánchez, Michael. "Nonlinear effects in vertical cavity semiconductor optical amplifiers and applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3112864.
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Wang, Dongxue Michael. "Optoelectronic device simulation optical modeling for semiconductor optical amplifiers and solid state lighting /." Diss., Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-03292006-132611/.
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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006.Buck, John, Committee Co-Chair ; Ferguson, Ian, Committee Chair ; Krishnamurthy,Vikram, Committee Member ; Chang, Gee-Kung, Committee Member ; Callen, W. Russell Jr., Committee Member ; Summers, Christopher, Committee Member.
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Bonk, René [Verfasser]. "Linear and Nonlinear Semiconductor Optical Amplifiers for Next-Generation Optical Networks / René Bonk." Karlsruhe : KIT Scientific Publishing, 2013. http://www.ksp.kit.edu.
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Wang, Jade P. (Jade Peilynn) 1979. "Demonstrating effective all-optical processing in ultrafast data networks using semiconductor optical amplifiers." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44907.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references.
The demand for bandwidth in worldwide data networks continues to increase due to growing Internet use and high-bandwidth applications such as video. All-optical signal processing is one promising technique for providing the necessary capacity and offers payload transparency, power consumption which scales efficiently with increasing bit rates, reduced processing latency, and ultrafast performance. In this thesis, we focus on using semiconductor optical amplifier-based logic gates to address both routing and regeneration needs in ultrafast data networks. To address routing needs, we demonstrate a scalable, multi-packet all-optical header processing unit operating at a line rate of 40 Gb/s. For this experiment, we used the ultrafast nonlinear interferometer (UNI) gate, a discrete optical logic gate which has been demonstrated at speeds of 100 Gb/s for bit-wise switching. However, for all-optical switching to become a reality, integration is necessary to significantly reduce the cost of manufacturing, installation, and operation. One promising integrated all-optical logic gate is the semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI). This gate has previously been demonstrated capable of up to 80 Gb/s bit-wise switching operation. To enable simple installation and operation of this gate, we developed a performance optimization method which can quickly and accurately pinpoint the optimal operating point of the switch. This eliminates the need for a time-intensive search over a large parameter space and significantly simplifies the operation of the switch. With this method, we demonstrate the ability of a single SOA-MZI logic gate to regenerate ultrafast pulses over 100 passes and 10,000 km in a regenerative loop. Ultimately, all-optical logic gates must be integrated on a single low-cost platform and demonstrated in cascaded, multi-gate operation for increased functionality.
(cont.) This requires low-loss monolithic integration. Our approach to this involves an asymmetric twin waveguide (ATG) design. This design also has the potential for high-yields as a result of a high tolerance for fabrication errors. We present our characterization results of ATG waveguides and proposals for future improvements.
by Jade P. Wang.
Ph.D.
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Wang, Haibo. "Semiconductor optical amplifier based optical switches for large scale integration." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609412.
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Ming, Tang Jian. "Nonlinear dynamical and spectral effects in semiconductor laser devices." Thesis, Bangor University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267445.
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Wang, Jin. "Pattern effect mitigation techniques for all-optical wavelength converters based on semiconductor optical amplifiers." Karlsruhe : Universitätsverlag, 2008. http://digbib.ubka.uni-karlsruhe.de/volltexte/1000009234.
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Akbar, Jehan. "High power mode locked lasers monolithically integrated with semiconductor optical amplifiers." Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3461/.
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This thesis is concerned with the design, fabrication and characterisation of high power semiconductor mode locked lasers (SMLLs), operating at ~ 1.5 μm. The devices are based on a novel epitaxial structure with three quantum wells (QW) in the active region. The novel epitaxial structure was based on a commercially available five-QW AlGaInAs/InP epitaxial structure, with the number of QWs reduced to increase the gain saturation energy and a farfield reduction layer (FRL), and a spacer layer were inserted in the n-cladding layer. SMLLs based on both the five-QW and three-QW material, were fabricated and comparatively investigated. The devices based on the three-QW material exhibited an increased average output power, as well as reduced RF linewidth and pulse widths. The average output power obtained in the mode locked operation from a 40 GHz MLL, based on this three-QW material was limited to 28 mW. Single mode ridge waveguide semiconductor optical amplifiers (SOAs) were monolithically integrated with the SMLLs, which increased the average output power to 130 mW. The devices performance was investigated at both the saturable absorber (SA) and SOA facets. Transform limited pulses with a minimum duration of 3.3 ps and a peak power of > 1 W were obtained at the SOA facet. To take advantage of the higher saturation output power of the tapered SOAs, SMLLs were monolithically integrated with 2° and 6° tapered SOAs, respectively. The devices integrated with 2° tapered SOAs were mounted on Aluminium Nitride (AlN) sub-mounts using Gold-Tin (AuSn) soldering for better heat sinking. These devices resulted in an average output power of 200 mW, with corresponding peak power > 1.2 W. The SMLLs integrated with 6° tapered SOAs, mounted on conventional brass sub-mounts resulted in a lower output power (105 mW), compared to the devices integrated with ridge waveguide and 2° tapered SOAs, respectively.
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Harris, Mitchell T. "Analysis of semiconductor optical amplifiers in VCSEL based wavelength division multiplexing communication /." abstract and full text PDF (free order & download UNR users only), 2007. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1446799.
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Thesis (M.S.)--University of Nevada, Reno, 2007."May, 2007." Includes bibliographical references (leaves 82-83). Online version available on the World Wide Web. Library also has microfilm. Ann Arbor, Mich. : ProQuest Information and Learning Company, [2007]. 1 microfilm reel ; 35 mm.
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Rabus, Dominik Gerhard. "Realization of optical filters using ring resonators with integrated semiconductor optical amplifiers in GaInAsP-InP." [S.l.] : [s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=964927349.
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Mathlouthi, Walid. "Performance improvement of SS-WDM passive optical networks using semiconductor optical amplifiers: Modeling and experiment." Thesis, Université Laval, 2010. http://www.theses.ulaval.ca/2010/28041/28041.pdf.
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Ghazisaeidi, Amirhossein. "Advanced Numerical Techniques for Design and Optimization of Optical Links Employing Nonlinear Semiconductor Optical Amplifiers." Thesis, Université Laval, 2011. http://www.theses.ulaval.ca/2011/27541/27541.pdf.
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Goossens, Mark. "Ultrafast organic lasers and solid-state amplifiers." Thesis, St Andrews, 2007. http://hdl.handle.net/10023/315.
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Lämmlin, Matthias. "GaAs-based semiconductor optical amplifiers with quantum dots as an active medium." [S.l.] : [s.n.], 2006. http://opus.kobv.de/tuberlin/volltexte/2007/1476.
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LI, XIAOXU. "WAVELENGTH-DIVISION-MULTIPLEXED TRANSMISSION USING SEMICONDUCTOR OPTICAL AMPLIFIERS AND ELECTRONIC IMPAIRMENT COMPENSATION." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4025.
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Over the last decade, rapid growth of broadband services necessitated research aimed at increasing transmission capacity in fiber-optic communication systems. Wavelength division multiplexing (WDM) technology has been widely used in fiber-optic systems to fully utilize fiber transmission bandwidth. Among optical amplifiers for WDM transmission, semiconductor optical amplifier (SOA) is a promising candidate, thanks to its broad bandwidth, compact size, and low cost. In transmission systems using SOAs, due to their large noise figures, high signal launching powers are required to ensure reasonable optical signal-to-noise ratio of the received signals. Hence the SOAs are operated in the saturation region and the signals will suffer from SOA impairments including self-gain modulation, self-phase modulation, and inter channel crosstalk effects such as cross-gain modulation, cross-phase modulation, and four-wave mixing in WDM. One possibility to circumvent these nonlinear impairments is to use constant-intensity modulation format in the 1310 nm window where dispersion is also negligible. In this dissertation, differential phase-shift keying (DPSK) WDM transmission in the 1310 nm window using SOAs was first considered to increase the capacity of existing telecommunication network. A WDM transmission of 4 x 10 Gbit/s DPSK signals over 540 km standard single mode fiber (SSMF) using cascaded SOAs was demonstrated in a recirculating loop. In order to increase the transmission reach of such WDM systems, those SOA impairments must be compensated. To do so, an accurate model for quantum-dot (QD) SOA must be established. In this dissertation, the QD-SOA was modeled with the assumption of overall charge neutrality. Static gain was calculated. Optical modulation response and nonlinear phase noise were studied semi-analytically based on small-signal analysis.
The quantitative studies show that an ultrafast gain recovery time of ~0.1 ps can be achieved when QD-SOAs are under high current injection, which leads to high saturation output power. However more nonlinear phase noise is induced when the QD-SOAs are used in the transmission systems operating at 10 Gbit/s or 40 Gbit/s. Electronic post-compensation for SOA impairments using coherent detection and digital signal processing (DSP) was investigated next in this dissertation. An on-off keying transmission over 100 km SSMF using three SOAs at 1.3 [micrometer] were demonstrated experimentally with direct detection and SOA impairment compensation. The data pattern effect of the signal was compensated effectively. Both optimum launching power and Q-factor were improved by 8 dB. For advanced modulation formats involving phase modulation or in transmission windows with large dispersion, coherent detection must be used and fiber impairments in WDM systems need to be compensated as well. The proposed fiber impairment compensation is based on digital backward propagation. The corresponding DSP implementation was described and the required calculations as well as system latency were derived. Finally joint SOA and fiber impairment compensations were experimentally demonstrated for an amplitude-phase-shift keying transmission.Ph.D.
Optics and Photonics
Optics and Photonics
Optics PhD
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MASTRAPA, GRETER CAPOTE. "CONTROL OF THE SATURATION POWER OF SEMICONDUCTOR OPTICAL AMPLIFIERS IN PULSED REGIME." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2015. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=26167@1.
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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIROCOORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR
PROGRAMA DE EXCELENCIA ACADEMICA
A crescente demanda do uso de sistemas de comunicação óptica, seja pelo aumento do número de usuários ou pela quantidade de informação enviada, requer um aumento substancial na necessidade de desenvolvimento de novos sistemas e componentes. A reectometria óptica no domínio do tempo (OTDR) é a técnica mais empregada para detecção de falhas em enlaces de fibra óptica. Em alguns tipos de rede óptica, como é o caso das redes ópticas passivas (PONs), as perdas nos enlaces são muito elevadas devido à presença de splitters, que dividem o sinal para cada usuário (no cenário FTTH) ou cada grupo de usuários (FTTB / FTTA), o que diminui consideravelmente a máxima distância atingida pelo OTDR. Em termos de componentes aplicados à comunicação óptica, aqueles utilizados para a amplificação óptica são de grande importância. Entre eles estão presentes os amplificadores ópticos de semicondutores. Uma forma de vencer as limitações impostas pelas altas perdas está no emprego de um amplificador óptico semicondutor (SOA), que ao mesmo tempo amplifica o sinal e funciona como uma chave, inibindo a emissão de ASE nos intervalos entre os pulsos do OTDR. Ainda assim, o ganho adicional pode ser insuficiente devido à baixa potência de saturação do SOA. Neste trabalho, será desenvolvido experimentalmente um método para superar a limitação de saturação de um SOA e permitir maiores ganhos de amplificação para pulsos de OTDR. O conceito básico consiste em se aproveitar do fato de que o ciclo de uso de um OTDR é relativamente baixo, o que permite subdividir os pulsos em sub-pulsos, amplificá-los um a um e depois recombiná-los, de forma transparente ao OTDR. Com base na ideia proposta acima, nesta dissertação de mestrado terão avaliados métodos usando a polarização e o comprimento de onda dos pulsos.
The growing demand of using optical communication systems, either by increasing the number of users or the amount of information sent, requires a substantial increase in the need to develop new systems and components. The optical time domain re ectometry (OTDR) is the most common technique for detecting faults in fiber optic links. In some types of optical network, such as passive optical networks (PONs), losses in the links are very high due to the presence of splitters that divide the signal to each user (in FTTH scenario) or each user group ( FTTB / FTTA), which considerably reduces the maximum distance reached by the OTDR. In terms of components used for optical communication, those used for optical amplification is of great importance. Among them are present optical semiconductor amplifiers. One way to overcome the limitations imposed by high losses is the use of a semiconductor optical amplifier (SOA), which at the same time amplifies the signal and acts as a key, inhibiting the emission ASE in the intervals between the OTDR pulses. Still, the additional gain may be insufficient due to low saturation power SOA. This work will develop experimentally a method to overcome the limitation of saturation of an SOA and allow higher amplification gains for OTDR pulse. The basic concept is to take advantage of the fact that the use of an OTDR cycle is relatively low, which allows to split the pulses into sub-pulses, amplify them one by one and then recombine them in a transparent manner to the OTDR. Based on the idea proposed above, this master thesis will be evaluated using methods polarization and wavelength of the pulses.
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Termos, Hassan. "Study of up & down conversion technique by all-optical sampling based on SOA-MZI." Thesis, Brest, 2017. http://www.theses.fr/2017BRES0021/document.
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La conversion de fréquence est une fonction clef présente dans divers contextes, particulièrement dans les systèmes mixtes photoniques-hyperfréquences. Aujourd’hui, la suprématie des réseaux optiques pour le transport de données à haut débit sur de grandes distances incite à l’intégration de telles fonctions dans le domaine optique afin de bénéficier des faibles pertes, larges bandes passantes, faibles poids et tailles propres aux technologies optiques. Dans ce travail, nous étudions un mélangeur tout-optique utilisant un composant SOA-MZI (Semiconductor Optical Amplifier Mach-Zehnder Interferometer) et une technique d’échantillonnage permettant la conversion vers les hautes et les basses fréquences. Le principe du mélange exploite les caractéristiques spectrales d’un signal échantillonné pour lequel des répliques du signal d’origine existent à différentes autres fréquences. Utiliser une telle technique pour la conversion de fréquences offre deux avantages : la conversion vers les hautes et les basses fréquences utilise la même configuration du mélangeur et la fréquence de l’oscillateur local peut être inférieure à la gamme des fréquences visées.L’implémentation d’une telle technique d’échantillonnage nécessite un interrupteur optique contrôlé optiquement.Comme cela est montré dans ce travail, un SOA-MZI peut jouer ce rôle. Selon la phase relative entre ses bras, un interféromètre Mach-Zehnder (MZI) peut transmettre ou non un signal optique d’entrée. En plaçant un SOA dans chaque bras de la structure MZI, la modulation croisée de la phase qui existe au sein d’un SOA est mise à profit pour contrôler l’état de l’interféromètre. Contrôlé par une source impulsionnelle optique, cet interrupteur optique permet d’échantillonner un signal optique porteur de données à modulation complexe. La conversion de fréquence de signaux mono et multi-porteuses dans le domaine 0,5-39,5 GHz a été obtenue avec succès. Par utilisation d’une configuration différentielle du SOA-MZI, des conversions vers les hautes et les basses fréquences jusqu’à un débit de 1 Gb/s ont pu être réaliséesFrequency mixing is a key function existing in different systems, especially in mixed photonic-microwave ones. Today, the supremacy of optical networks to carry high bitrate data over large distances motivates the optical implementation of such functions to benefit from the low loss, high bandwidth, low size and weight of optical technologies. In this work, we study a photonic mixer based on a SOA-MZI (Semiconductor Optical Amplifier Mach-Zehnder Interferometer) device and a sampling technique allowing both conversion towards high and low frequencies.The involved mixing principle exploits the spectral characteristics of a sampled signal in which replicas of the original spectrum exist at different other frequencies. Basing the frequency conversion on a sampling technique gives two advantages: the photonic mixer configuration is the same for up and down conversions, and the frequency of the local oscillator can be less than the addressed frequency range.The implementation of such a sampling technique needs an optically-controlled high-frequency optical switch. As shown in this work, a SOA-MZI can play this role. Depending on the relative phase between its arms, an interferometric structure (MZI) can transmit or cancel an optical input signal. By locating one SOA in each arm of the MZI structure, the cross-phase modulation that exists inside an SOA is exploited to optically control the optical switch state of the MZI.Controlled by an optical pulse source, this optical switch is able to sample an optical input signal carrying complexmodulated data. Frequency conversions of mono and multi-carrier signals in the range 0.5-39.5 GHz have been successfully achieved. By using a differential configuration of the SOA-MZI, both up and down conversions at bitrates up to 1 Gb/s are reached
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Besse, Pierre-André. "Modal reflectivities and new derivation of the basic equations for semiconductor optical amplifiers /." Zürich : ETH, 1992. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=9608.
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