Relevant bibliographies by topics / Semiconductor optical amplifiers (SOAs)

Academic literature on the topic 'Semiconductor optical amplifiers (SOAs)'

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Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Semiconductor optical amplifiers (SOAs)"

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Hasan, Muhnaad Abbas. "Design and Implement All-optical Logic Gates And by Using Semiconductor Optical Amplifiers (SOAs)." Journal of Advanced Research in Dynamical and Control Systems 12, no. 7 (July 20, 2020): 563–70. http://dx.doi.org/10.5373/jardcs/v12i7/20202039.

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Kotb, Amer. "Performance of All-Optical XNOR Gate Based on Two-Photon Absorption in Semiconductor Optical Amplifiers." Advances in Optical Technologies 2014 (December 31, 2014): 1–6. http://dx.doi.org/10.1155/2014/754713.

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All-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is realized by using Mach-Zehnder interferometers (MZIs) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor optical amplifiers (SOAs). The employed model takes into account the impact of amplified spontaneous emission (ASE), input pulse energy, pulsewidth, SOAs carrier lifetime, and linewidth enhancement factor (α-factor) on the gate’s output quality factor (Q-factor). The outcome of this study shows that the all-optical XNOR gate is indeed feasible with the proposed scheme at 250 Gb/s with both logical correctness and acceptable quality.
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Pavlovs, D., V. Bobrovs, M. Parfjonovs, A. Alsevska, and G. Ivanovs. "Investigation of Power Efficiency Changes in DWDM Systems Replacing Erbium-Doped Amplifiers By Semiconductor Optical Amplifiers." Latvian Journal of Physics and Technical Sciences 59, no. 1 (February 1, 2022): 44–52. http://dx.doi.org/10.2478/lpts-2022-0005.

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Abstract To evaluate potential utilization of semiconductor optical amplifiers (SOAs) as a wideband amplification alternative to erbium doped fibre amplifiers (EDFAs) in dense wavelength division multiplexed (DWDM) coherent systems, the authors discuss changes in power consumption levels required for a single bit transmission. The research evaluates the power efficiency parameter for WDM transmission systems using both amplification schemes – EDFAs that utilise standard C-band and SOAs assuming 75 nm amplification spectral band. The power efficiency levels have been estimated for five transmission spans with maximal distance of 640 km. The standard 50 GHz channel spacing has been chosen for both system configurations to allocate 100 Gbps dual-polarization quadrature phase shift keying (DP-QPSK) optical signals. The simulation schemes are described along with the critical parameters, derived from the recent relevant studies that should be taken into account considering usage of SOAs as in-line amplifiers.
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JAHROMI, HAMED DEHDASHTI, ALI BINAIE, ABBAS ZARIFKAR, and MOHAMMAD HOSSEIN SHEIKHI. "A NEW STRUCTURE FOR ALL-OPTICAL THREE-INPUT XOR LOGIC GATE BASED ON SEMICONDUCTOR OPTICAL AMPLIFIER MACH–ZEHNDER INTERFEROMETER." International Journal of Modern Physics B 28, no. 07 (February 20, 2014): 1450052. http://dx.doi.org/10.1142/s0217979214500520.

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In this paper the design and simulation of an all-optical three-input exclusive-OR (XOR) gate based on semiconductor optical amplifier-Mach–Zehnder interferometer (SOA-MZI) configuration is presented. This gate is constructed of three semiconductor optical amplifiers placed at the arms of the two coupled Mach–Zehnder interferometers. The outputs of these two MZIs are combined at the output port to form the final signal. The proposed scheme does not need a continuous wave (CW) laser for its operation and is designed so that the minimum number SOAs are employed. Theoretical analyses and simulations show that this structure acts as an all-optical three-input XOR logic gate which has many applications in optical data communications.
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Renaud, Thibaut, Heming Huang, Frédéric Grillot, and Dieter Bimberg. "Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers." Laser Physics Letters 19, no. 11 (October 7, 2022): 116202. http://dx.doi.org/10.1088/1612-202x/ac9595.

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Abstract The nonlinear features of both semiconductor optical amplifiers (SOAs) and semiconductor lasers, which are made from the same InAs/GaAs quantum dot (QD) wafers, are investigated in detail. By employing pump-probe driven four-wave mixing as an experimental tool, the wave conversion process shows notably different profiles for the two types of devices. Due to the contributions of ultrafast, sub-picosecond mechanisms, such as carrier heating and spectral hole burning, the pump-probe frequency can be easily tuned to the THz range. SOAs generally benefit more from sub-picosecond carrier dynamics, hence exhibiting a higher conversion efficiency (CE) in the THz range, compared to their laser diode counterparts. The discrepancy even exceeds 10 dB. In addition, laser experiments yield some differences from the amplifier ones, hence leading to a higher nonlinear CE at small detuning ranges. These results strongly improve our insight into the fundamental nonlinear properties of InAs/GaAs QD material, and contribute to the conception of novel devices for future on-chip applications in all-optical communication networks, such as signal wavelength conversion, mode-locking, and optical frequency comb generation.
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Wu, Jian, Min Xue Wang, and Bing Bing Wu. "All-Optical Signal Processing Based on Nonlinear Effects in Semiconductor Optical Amplifiers." Advanced Materials Research 74 (June 2009): 39–43. http://dx.doi.org/10.4028/www.scientific.net/amr.74.39.

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In this paper, we report our recent studies on developing nonlinear techniques based on a single SOA for all-optical signal processing at high-speed, with a focus on simple configurations employing commercial SOAs for several key all-optical network applications. Our researches are based on nonlinear polarization rotation (NPR), four-wave mixing (FWM) and cross-phase modulation (XPM) effects in a single SOA. We propose and demonstrate applications of the nonlinear techniques in all-optical logic gates, multi-function format coversion, tunable Lyot birefringent filter and multi-channel optical time division multiplexed (OTDM) demultiplexing.
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MUKHERJEE, KOUSIK. "SEMICONDUCTOR OPTICAL AMPLIFIER BASED FREQUENCY ENCODED LOGIC GATES EXPLOITING NONLINEAR POLARIZATION ROTATION ONLY." Journal of Circuits, Systems and Computers 23, no. 09 (August 25, 2014): 1450130. http://dx.doi.org/10.1142/s0218126614501308.

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All optical frequency encoded logic gates NOT, OR and AND are proposed and described using polarization rotation in semiconductor optical amplifiers (SOAs). The switching power of the logic gates are very low and have capability to speed of 320 Gbps. The gates are easily integrable, simple in hardware and compatible to optical network. The input and output power requirement is included.
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Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (November 23, 2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).
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Taleb, Hussein, Kambiz Abedi, and Saeed Golmohammadi. "Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model." Advances in OptoElectronics 2013 (March 7, 2013): 1–8. http://dx.doi.org/10.1155/2013/831852.

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A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes. Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.
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Han, Bingchen, Junyu Xu, Pengfei Chen, Rongrong Guo, Yuanqi Gu, Yu Ning, and Yi Liu. "All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers." Applied Sciences 11, no. 4 (February 7, 2021): 1499. http://dx.doi.org/10.3390/app11041499.

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An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.
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Dissertations / Theses on the topic "Semiconductor optical amplifiers (SOAs)"

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Ultanir, Erdem. "STABLE SPATIAL SOLITONS IN SEMICONDUCTOR OPTICAL AMPLIFIERS." Doctoral diss., University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4468.

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A spatial soliton is a shape invariant self guided beam of light or a self induced waveguide. Spatial solitons appear as a result of the balance of diffraction and nonlinear focusing in asystem. They have been observed in many different conservative media in the last couple ofyears. Solitons are ubiquitous, because of the probability of using their interactions in opticaldata processing, communications etc. Up to now due to the power required to generate thesolitons, and the response times of the soliton supporting media, these special waves of naturecould not penetrate the applications arena. Semiconductors, with their resonant nonlinearities, arethought to be ideal candidates for fast switching, low power spatial solitons. In this dissertation it is shown theoretically and experimentally that it is possible toobserve stable spatial solitons in a periodically patterned semiconductor optical amplifier(PPSOA). The solitons have unique beam profiles that change only with system parameters, likepumping current, etc. Their coherent and incoherent interactions which could lead to all opticaldevices have been investigated experimentally and theoretically. The formation of filaments ormodulational instability has been studied theoretically and yielded analytical formulae forevaluating the filament gain and the maximum spatial frequencies in PPSOA devices. Furthermore, discrete array amplifiers have been analyzed numerically for discrete solitons, and the prospect of using multi peak discrete solitons as laser amplifiers is discussed.
Ph.D.
Optics and Photonics
Optics and Photonics
Optics and Photonics
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Taki, Haidar. "On ultra-wideband over fiber transmission systems employing semiconductor optical amplifiers." Thesis, Brest, 2017. http://www.theses.fr/2017BRES0071/document.

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La technologie Ultra WideBand (UWB) sur fibre est une solution prometteuse pour répondre aux enjeux des futurs réseaux de communication WLAN/WPAN. Les caractéristiques de la fibre, incluant son énorme bande passante, offrent la possibilité d'une bonne qualité de service à longue portée. La propagation sans-fil UWB doit être réalisée sous des contraintes de densité spectrale de puissance particulières, imposées par l'autorité de régulation (FCC pour les Etats-Unis). La nouveauté de notre travail provient de I' exploitation des avantages d'un amplificateur optique à semi-conducteurs (SOA) afin d'obtenir une extension de portée à un coût et une complexité limités. Cependant, les effets non linéaires et le bruit d'émission spontanée amplifiée (ASE), intrinsèques à ce type de composant, sont susceptibles de dégrader la performance du système. La réduction de ces effets indésirables a donc été d'une importance centrale dans cette étude. Les non-linéarités du SOA ont été compensées en appliquant une solution de pré-distorsion analogique des formes d'ondes électriques. Un traitement basé sur phaser a également été proposé pour réduire simultanément I' influence de I'ASE et linéariser les caractéristiques du SOA, grâce à des opérations de chirping réparties entre l'émetteur et le récepteur. Avec la transmission Impulse Radio, en raison des propriétés temporelles des formats de modulation, des raies spectrales apparaissent, ce qui peut violer la limite FCC ou réduire I' efficacité énergétique. Une nouvelle technique de randomisation de formes d'ondes a été étudiée, qui s'est révélée efficace pour supprimer ces pics spectraux. Les trois approches ont montré un grand potentiel avec les formats On Off Keying et Pulse Position Modulation, à longue portée optique. Les performances d'une modulation différentielle Chaos Shift Keying ont finalement été examinées; une probabilité d'erreur inférieure a été obtenue expérimentalement en comparaison avec d'autres modulations non cohérentes
Ultra WideBand (UWB) over fiber is a promising technology for meeting the demands of future wireless local-area networks (WLANs) and wireless personal-area networks (WPANs). Thanks to the enormous bandwidth and fiber characteristics, a high communication quality may be established at long reach. UWB wireless propagation must be achieved with special power and spectral constraints fixed by the regulatory bodies (e.g. US Federal Communication Commission). The novelty of our work originates from exploiting the benefits of a Semiconductor Optical Amplifier (SOA) so as to get a reach extension at limited cost and complexity. However, the inherent nonlinear effects and Amplified Spontaneous Emission (ASE) noise associated to such device may affect the system performance.Overcoming these impairments has been of central importance in this study. SOA nonlinearities have been mitigated by applying analog pre-distortion in electrical domain. Phaser-based processing was also proposed to simultaneously reduce ASE influence and linearize SOA characteristics, thanks to up/down chirping performed on the transmitter/receiver sides. With Impulse Radio UWB transmission, due to the time properties of modulation patterns, discrete lines arise in the corresponding spectrum, which may violate FCC limit or reduce the power efficiency. A new shape randomization technique has been investigated, which proved to be effective in suppressing these spectral spikes. The three approaches have shown a great potential with On Off Keying and Pulse Position Modulation formats at long optical reach.The performance of Differential Chaos Shift Keying was finally examined in the over fiber system, a lower error probability was experimentally achieved in comparison with other non-coherent modulations
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Dionísio, Rogério Pais. "Advanced optical modulation and format conversion." Doctoral thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/12850.

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Doutoramento em Engenharia Electrotécnica
Over the years, the increased search and exchange of information lead to an increase of traffic intensity in todays optical communication networks. Coherent communications, using the amplitude and phase of the signal, reappears as one of the transmission techniques to increase the spectral efficiency and throughput of optical channels. In this context, this work present a study on format conversion of modulated signals using MZI-SOAs, based exclusively on all- optical techniques through wavelength conversion. This approach, when applied in interconnection nodes between optical networks with different bit rates and modulation formats, allow a better efficiency and scalability of the network. We start with an experimental characterization of the static and dynamic properties of the MZI-SOA. Then, we propose a semi-analytical model to describe the evolution of phase and amplitude at the output of the MZI-SOA. The model’s coefficients are obtained using a multi-objective genetic algorithm. We validate the model experimentally, by exploring the dependency of the optical signal with the operational parameters of the MZI-SOA. We also propose an all-optical technique for the conversion of amplitude modulation signals to a continuous phase modulation format. Finally, we study the potential of MZI-SOAs for the conversion of amplitude signals to QPSK and QAM signals. We show the dependency of the conversion process with the operational parameters deviation from the optimal values. The technique is experimentally validated for QPSK modulation.
Nos últimos anos, a crescente procura e troca de informação tem levado ao aumento de tráfego nas redes de comunicação óticas atuais. As comunicações coerentes, com recurso à amplitude e fase do sinal, ressurgem como uma das técnicas de transmissão capazes de aumentar a eficiência espectral e o rendimento dos canais óticos. Nesse âmbito, este trabalho apresenta um estudo sobre a conversão de formatos de modulação de sinais, usando técnicas exclusivamente no domínio ótico, através de conversão de comprimento de onda, com base no MZI-SOA. Esta técnica, aplicada em nós óticos que interligam redes óticas com débitos binários distintos, permite uma maior escalabilidade e eficiência da rede. A tese começa por apresentar uma caracterização experimental detalhada das propriedades estáticas e dinâmicas do MZI-SOA. É depois proposto um modelo semi-analítico que descreve a evolução da amplitude e fase do sinal ótico à saída do MZI-SOA. Os coeficientes do modelo são obtidos recorrendo a um algoritmo genético multiobjectivo. O modelo é validado experimentalmente, explorando a dependência do sinal ótico com os parâmetros operacionais do MZI- SOA. Segue-se a proposta de uma técnica de conversão de formato de modulação de amplitude para modulação de fase contínua. Finalmente, é feito um estudo das potencialidades do MZI-SOA para conversão de formato de modulação de amplitude para modulação QPSK e QAM. Mostra-se a dependência da constelação do sinal com o desvio dos parâmetros operacionais, em torno do valor ótimo. A técnica é validada experimentalmente para modulação QPSK.
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Wen, Pengyue. "Vertical cavity semiconductor optical amplifiers /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3070991.

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Kelly, Anthony Edward. "Optimisation of semiconductor optical amplifiers for optical networks." Thesis, University of Strathclyde, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366966.

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Carbó, Meseguer Alexis. "Semiconductor optical amplifiers for ultra-wideband optical systems." Thesis, Evry, Institut national des télécommunications, 2018. http://www.theses.fr/2018TELE0010/document.

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Au cours des dernières décennies, le monde a subi une révolution majeure qui a profondément affecté comment on utilise les réseaux de communication. De nouveaux services et applications ont été apparus, tels que les réseaux sociaux, les jeux en ligne ou le streaming en direct, qui exigent une augmentation constante de la capacité des systèmes optiques. La motivation de ce travail est donc d'étudier la mise en œuvre d'un nouvel amplificateur SOA à très large bande avec une bande passante de plus de 100 nm afin d’étendre la capacité du système. L'utilisation de l'amplification SOA change complètement le paradigme dans la conception d'un système optique puisque toutes les dégradations ajoutées par la SOA doivent être considérées. Ainsi, la recherche d'un modèle analytique ou numérique capable de caractériser la nature non linéaire de ce dispositif est d'abord étudiée. Ensuite, on montre comment un SOA bien conçu peut non seulement amplifier un signal à large bande, mais également surmonter certains des principaux inconvénients du SOA devant EDFA. Finalement, on évalue la capacité de ce nouveau UWB SOA pour les applications d'interconnexion de centres de données avec deux expériences en transmettant jusqu'à 115 Tbps de données dans une liaison à bande passante continue de 100 nm sur 100 km de fibre et en testant la stabilité du système avec cartes de ligne en temps réelle entre deux points de présence (POP) de Facebook déployés dans la région parisienne
Over the last few decades the world has undergone a major revolution that has deeply affected the way we use communication networks. New services and applications have appeared demanding a constant increase of the channel capacity. In this period, optical systems have been upgraded at pair with advanced signal processing techniques which have permitted the increase of the spectral efficiency approaching the system capacity to the fundamental limit. It is because is becoming extremely challenging to keep growing the system capacity by this means. In this work, an orthogonal direction is studied to further increase the fibre capacity: extending the optical bandwidth. With this purpose, the use of semiconductor optical amplifiers (SOA) is investigated to be implemented in future ultra-wideband (UWB) systems. The use of SOA amplification changes completely the paradigm in the design of an optical system since all the impairments added by the SOA must be considered. In this work, we assess the reservoir model, a simple yet powerful model, to analyze numerically the nonlinear regime of the SOA for WDM systems. We also show for the first that the linewidth enhancement factor of an SOA can be estimated with a coherent receiver. Finally, it is also studied how the correlation between channels degrades significantly the performance of the SOA and the inclusion of a decorrelation fibre is investigated. The conception of a UWB system is then studied. We characterize a novel ultra-wideband SOA developed by the French project CALIPSO which presents high gain in a 100-nm optical bandwidth with high output saturation power and 6-8 dB of noise figure. We analyze its nonlinear regime for WDM systems and we show for QPSK and 16 QAM modulation formats that the input saturation power can be overtaken by serveral dBs without important nonlinear penalty. On the other hand, a novel technique is studied to compensate fibre nonlinearities in UWB systems: the multicarrier multiplexing, which tries to exploit the concept of symbol rate optimization. Finally, we assess the capabilities of this novel UWB SOA for data-centre interconnection applications with two experiments transmitting up to 113 Tbps data troughput in a 100-nm continuous bandwidth link over 100 km of fibre and then testings is stability with real-time line cards between two points of presence (POP)of Facebook deployed in the Paris area
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Fews, Hayden Scott. "Multiwave mixing in semiconductor optical amplifiers." Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300912.

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Yao, Jianguo. "Optical switching using semiconductor laser amplifiers." Thesis, University of Essex, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260402.

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Annetts, Paul Julian. "Advanced applications of semiconductor optical amplifiers." Thesis, University of Bristol, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299275.

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Sosabowski, Jeremy. "Novel applications of semiconductor optical amplifiers." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613776.

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Books on the topic "Semiconductor optical amplifiers (SOAs)"

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Semiconductor optical amplifiers. Singapore: World Scientific Pub., 2007.

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Semiconductor optical amplifiers. Boston: Kluwer Academic, 2002.

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Rostami, Ali, Hamed Baghban, and Reza Maram. Nanostructure Semiconductor Optical Amplifiers. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14925-2.

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Ghafouri-Shiraz, H. Fundamentals of laser diode amplifiers. Chichester: J. Wiley, 1996.

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Rostami, Ali. Nanostructure semiconductor optical amplifiers: Building blocks for all-optical processing. Heidelberg: Springer, 2011.

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Schmeckebier, Holger. Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44275-4.

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The principles of semiconductor laser diodes and amplifiers: Analysis and transmission line laser modeling. London: Imperial College Press, 2004.

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Ghafouri-Shiraz, H. Distributed feedback laser diodes: Principles and physical modeling. New York: Wiley, 1996.

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Ghafouri-Shiraz, H. Distributed feedback laser diodes: Principles and physical modeling. Chichester, West Sussex: Wiley, 1996.

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Connelly, Michael J. Semiconductor Optical Amplifiers. Springer London, Limited, 2007.

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Book chapters on the topic "Semiconductor optical amplifiers (SOAs)"

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Schmeckebier, Holger. "Introduction to Semiconductor Optical Amplifiers (SOAs)." In Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication, 13–34. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-44275-4_2.

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Rostami, Ali, and Reza Maram. "Application of SOA-Based Circuits in All-Optical Signal Processing and Switching." In Nanostructure Semiconductor Optical Amplifiers, 163–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14925-2_5.

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Agrawal, Govind P., and Niloy K. Dutta. "Optical Amplifiers." In Semiconductor Lasers, 487–529. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0481-4_11.

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Bonk, René, Thomas Vallaitis, Wolfgang Freude, Juerg Leuthold, Richard Penty, Anna Borghesani, and Ian F. Lealman. "Linear Semiconductor Optical Amplifiers." In Springer Series in Optical Sciences, 511–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-20517-0_12.

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Tijero, José-Manuel G., Antonio Pérez-Serrano, Gonzalo del Pozo, and Ignacio Esquivias. "Tapered Semiconductor Optical Amplifiers." In Handbook of Optoelectronic Device Modeling and Simulation, 697–714. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-22.

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Rostami, Ali, and Reza Maram. "Quantum-Dot Semiconductor Optical Amplifiers, Basic Principles, Design Methods, and Optical Characterizations." In Nanostructure Semiconductor Optical Amplifiers, 1–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14925-2_1.

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Rostami, Ali, and Reza Maram. "Simulation Methods of Quantum-Dot Semiconductor Optical Amplifiers." In Nanostructure Semiconductor Optical Amplifiers, 53–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14925-2_2.

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Rostami, Ali, and Reza Maram. "Techniques Toward High Speed Operation of Semiconductor Optical Amplifiers." In Nanostructure Semiconductor Optical Amplifiers, 71–107. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14925-2_3.

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Rostami, Ali, and Reza Maram. "Applications and Functionalities." In Nanostructure Semiconductor Optical Amplifiers, 109–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14925-2_4.

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Lingnau, Benjamin, and Kathy Lüdge. "Quantum-Dot Semiconductor Optical Amplifiers." In Handbook of Optoelectronic Device Modeling and Simulation, 715–46. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-23.

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Conference papers on the topic "Semiconductor optical amplifiers (SOAs)"

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Tsurugaya, Takuma, Tatsurou Hiraki, Takuma Aihara, Mitsumasa Nakajima, Koji Takeda, Toru Segawa, and Shinji Matsuo. "Cross-Gain Modulation-Based Reservoir Computing Using Membrane SOAs on Si-MZI." In CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.ss1d.2.

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We solve the Santa-Fe prediction task with reservoir computing utilizing cross-gain modulation in membrane semiconductor optical amplifiers (SOAs). SOAs are heterogeneously integrated on each arm of Si-based Mach-Zehnder interferometer to spatially separate the input/output ports.
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Jang, Bongyong, Jisan Lee, Dongsik Shim, Hyunil Byun, Changbum Lee, Kyunghyun Son, Yongchul Cho, et al. "Real-time imaging of mid-range LiDAR using single-chip beam scanner." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.ath2l.6.

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We demonstrate light-detection and ranging (LiDAR) operation detection ranges up to 30 m, 20 fps using fully integrated silicon photonic optical phased array with sparsely arranged semiconductor optical amplifiers (SOAs), for the first time.
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Chen, Y., L. M. Lunardi, C. Visone, E. Gonzales, S. Lumish, and D. Inniss. "Semiconductor Optical and Raman Amplifier (SOAR)." In Optical Amplifiers and Their Applications. Washington, D.C.: OSA, 2001. http://dx.doi.org/10.1364/oaa.2001.otuc3.

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Melo, A. M., K. Petermann, and C. Schubert. "Frequency vs. time-domain amplified spontaneous emission (ASE) noise modeling of semiconductor optical amplifiers (SOAs)." In 2003 European Quantum Electronics Conference. EQEC 2003 (IEEE Cat No.03TH8665). IEEE, 2003. http://dx.doi.org/10.1109/eqec.2003.1313889.

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Ahn, Soyeon, Gi Hyen Lee, Yeong Seo Kim, Min Su Kim, Ji Su Kim, Byeong Kwon Choi, Srinivas Pagidi, and Min Yong Jeon. "Fiber-optic Temperature Sensor based on Cholesteric Liquid Crystals using 1250 nm band, >220 nm Wideband Wavelength-swept Laser." In Optical Fiber Sensors. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/ofs.2022.w4.67.

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We present a cholesteric liquid crystal (CLC)-based optical fiber temperature sensor using a 1250 nm band wavelength-swept laser (WSL). The WSL is implemented using two semiconductor optical amplifiers (SOAs) with different center wavelengths connected in parallel in the form of a Mach-Zehnder interferometer in a laser resonator. At 3.6 kHz scanning frequency, the 10 dB bandwidth was about 223 nm from 1129 nm to 1352 nm. As the temperature of the CLC cell increased, the long-wavelength edge of the reflection band shifted to shorter wavelengths. The relationship between the temperature change and the central wavelength change of the reflection band was obtained to be almost linear.
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Wen, Pengyue, Michael Sanchez, Matthias Gross, Osman Kibar, and Sadik C. Esener. "New photon density rate equation for Fabry-Perot semiconductor optical amplifiers (FP SOAs)." In Symposium on Integrated Optoelectronic Devices, edited by Peter Blood, Marek Osinski, and Yasuhiko Arakawa. SPIE, 2002. http://dx.doi.org/10.1117/12.470522.

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Yamada, Minoru. "Noise in semiconductor optical amplifiers (SOA)." In 2016 IEEE 6th International Conference on Photonics (ICP). IEEE, 2016. http://dx.doi.org/10.1109/icp.2016.7509995.

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Hong, Wei, Dexiu Huang, Junqiang Sun, and Deming Liu. "Numerical simulation of recovery enhancement by a cw pump light in semiconductor optical amplifiers (SOAs)." In Asia-Pacific Optical and Wireless Communications 2002, edited by Constance J. Chang-Hasnain, YuXing Xia, and Kenichi Iga. SPIE, 2002. http://dx.doi.org/10.1117/12.480972.

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Ezra, Y. Ben, and B. I. Lembrikov. "All-optical memory based on quantum dot semiconductor optical amplifiers (QD-SOAs) for advanced modulation formats." In 2016 18th International Conference on Transparent Optical Networks (ICTON). IEEE, 2016. http://dx.doi.org/10.1109/icton.2016.7550364.

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Yoshimoto, N., K. Magari, Y. Kawaguchi, K. Kishi, O. Mitomi, Y. Kondo, Y. Kadota, et al. "4-channel polarization-insensitive semiconductor optical amplifier (SOA) gate array integrated with spot-size converters." In Optical Amplifiers and Their Applications. Washington, D.C.: OSA, 1997. http://dx.doi.org/10.1364/oaa.1997.sd15.

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Reports on the topic "Semiconductor optical amplifiers (SOAs)"

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DiJaili, S. P. Novel operation of semiconductor optical amplifier (SOA) for optoelectronic applications. Office of Scientific and Technical Information (OSTI), March 1996. http://dx.doi.org/10.2172/491215.

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Kalman, Robert F., Leonid G. Kazovsky, and Joseph W. Goodman. Space-Division Optical Switches Based on Semiconductor Optical Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada247616.

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Kalman, R. F., L. G. Kazovsky, and J. W. Goodman. Space Division Switches Based on Semiconductor Optical Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada247619.

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Yariv, Amnon. Semiconductor Based Transverse Bragg Resonance (TBR) Optical Amplifiers and Laser. Fort Belvoir, VA: Defense Technical Information Center, November 2005. http://dx.doi.org/10.21236/ada448611.

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Yariv, Amnon. Semiconductor Based Transverse Bragg Resonance (TBR) Optical Amplifiers and Lasers. Fort Belvoir, VA: Defense Technical Information Center, February 2007. http://dx.doi.org/10.21236/ada472485.

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Blumenthal, Daniel J. (BMDO) Modeling and Simulation of Multiwavelength Conversion in Semiconductor Laser Optical Amplifiers for Logic, Switching, Communication. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada413739.

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