Relevant bibliographies by topics / Semiconductor opening switch

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers
  4. Reports

Academic literature on the topic 'Semiconductor opening switch'

Author: Grafiati
Published: 7 September 2024
Last updated: 31 July 2025

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Journal articles on the topic "Semiconductor opening switch"

1

Tu, Jing, Jinsheng Luo, and Rong Yang. "Mechanism of Semiconductor Opening Switch." Japanese Journal of Applied Physics 46, no. 3A (2007): 897–902. http://dx.doi.org/10.1143/jjap.46.897.

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Chauchard, E. A., C. C. Kung, Chi H. Lee, and M. J. Rhee. "Repetitive semiconductor opening switch and application to short pulse generation." Laser and Particle Beams 7, no. 3 (1989): 615–26. http://dx.doi.org/10.1017/s0263034600007588.

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We describe the operation of a repetitive semiconductor opening switch in conjunction with inductive energy storage systems. Different materials and switch configurations are examined. A new method of generating square pulses of nanosecond duration is implemented. It utilizes the opening switch and a current charged transmission line.
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3

Hashimshony, D., C. Cohen, A. Zigler, and K. Papadopoulos. "Switch opening time reduction in high power photoconducting semiconductor switches." Optics Communications 124, no. 5-6 (1996): 443–47. http://dx.doi.org/10.1016/0030-4018(95)00685-0.

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Jiang, Weihua. "Pulsed High-Voltage Generator using Semiconductor Opening Switch." IEEJ Transactions on Fundamentals and Materials 130, no. 6 (2010): 538–42. http://dx.doi.org/10.1541/ieejfms.130.538.

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Schoenbach, K. H., V. K. Lakdawala, R. Germer, and S. T. Ko. "An optically controlled closing and opening semiconductor switch." Journal of Applied Physics 63, no. 7 (1988): 2460–63. http://dx.doi.org/10.1063/1.341022.

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Lyubutin, S., M. Pedos, A. V. Ponomarev, et al. "High efficiency nanosecond generator based on semiconductor opening switch." IEEE Transactions on Dielectrics and Electrical Insulation 18, no. 4 (2011): 1221–27. http://dx.doi.org/10.1109/tdei.2011.5976119.

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Ivanov, Pavel A., and Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode." Materials Science Forum 740-742 (January 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm2 peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5
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Lyubutin, S. K., S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov. "Operation of a semiconductor opening switch at ultrahigh current densities." Semiconductors 46, no. 4 (2012): 519–27. http://dx.doi.org/10.1134/s106378261204015x.

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Gusev, A. I., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin, and B. G. Slovikovsky. "Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode." Review of Scientific Instruments 89, no. 11 (2018): 114702. http://dx.doi.org/10.1063/1.5052530.

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NAMIHIRA, Takao, Takashi SAKUGAWA, Sunao KATSUKI, and Hidenori AKIYAMA. "Pulsed Power Generator with Inductive-Energy Storage Using Semiconductor Opening Switch." Journal of Plasma and Fusion Research 81, no. 5 (2005): 355–58. http://dx.doi.org/10.1585/jspf.81.355.

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Dissertations / Theses on the topic "Semiconductor opening switch"

1

Degnon, Mawuena. "Étude des commutateurs semi-conducteurs à ouverture destinés à des applications de puissance pulsée avec des tensions de sortie allant jusqu'à 500 kV." Electronic Thesis or Diss., Pau, 2024. https://theses.hal.science/tel-04685830.

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Dans les systèmes de hautes puissances pulsées, le stockage inductif présente un avantage indéniable vis-à-vis du stockage capacitif du fait de sa plus forte densité d’énergie. L’exploitation de cet avantage nécessite toutefois l'utilisation d'un interrupteur à ouverture pour générer l'impulsion de tension. En outre, compte tenu de la demande croissante de générateurs impulsionnels fiables, en particulier pour les applications industrielles, il devient indispensable de recourir aux composants semi-conducteurs. La diode SOS (Semiconductor Opening Switch), développée dans les années 1990 à l'Ins
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Conference papers on the topic "Semiconductor opening switch"

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Spencer, H., B. Esser, J. Dickens, et al. "Development of a Circuit Modeling Capability for Semiconductor Opening Switch-Based Pulsed Power Systems." In 2024 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2024. https://doi.org/10.1109/ipmhvc55105.2024.11002823.

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Chauchard, E. A., M. J. Rhee, and Chi H. Lee. "Repetitive opening switches using optically activated semiconductors." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fu7.

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Optically activated semiconductor opening switches1 are anticipated to have unique characteristics of repetitive operation, fast opening time, and potential scalability. We have demonstrated the operation of optically activated semiconductors2 as fast opening switches. A semiconductor with high dark resistivity is maintained in a conductive state by continuous illumination with argon laser light. The opening of the switch is obtained by interrupting abruptly the light using a Pockels cell placed between two parallel polarizers. The opening speed is given either by the rise time of the Pockels
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Schoenbach, K. I., V. K. Lakdawala, S. T. Ko, M. S. Mazzola, and R. K. F. Germer. "Laser Controlled Semiconductor Closing And Opening Switch." In 1988 Los Angeles Symposium--O-E/LASE '88, edited by Raymond F. Askew. SPIE, 1988. http://dx.doi.org/10.1117/12.943642.

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Sugai, Taichi, Akira Tokuchi, and Weihua Jiang. "Experimental characteristics of semiconductor opening switch diode." In 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2014. http://dx.doi.org/10.1109/ipmhvc.2014.7287218.

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Roodenburg, B. "Current source semiconductor opening switch with parallel IGCTs." In Pulsed Power Seminar. IEE, 2003. http://dx.doi.org/10.1049/ic:20030074.

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Citrin, D. S., and T. B. Norris. "All-Optical Switching at 100-Gb/s Rates via Coherent Control of Excitons in a Semiconductor Microcavity." In Photonics in Switching. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/ps.1997.pthc5.

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Although it is well known that the bandwidth afforded by optical fibers exceeds 1 Tb/s, the bandwidth of networks presently implemented is in the 1-10 Gb/s range. Considerable improvements are required in components used for modulation and demodulation of signals in optical communications networks. A central problem to be solved for the deployment of 100-Gb/s systems is the development of appropriate all-optical switches. A number of optical switches based on semiconductors, in which a control pulse gates a signal pulse, have been demonstrated. However, one of the main problems with switches b
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Panchenko, Alexei N., Victor F. Tarasenko, and Alexei E. Tel'minov. "Gas discharge lasers pumped by generators with semiconductor opening switch." In International Conference on Lasers, Applications, and Technologies '07, edited by Vladislav Panchenko, Vladimir Golubev, Andrey Ionin, and Alexander Chumakov. SPIE, 2007. http://dx.doi.org/10.1117/12.753211.

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Panchenko, Alexei N. "Efficient discharge lasers pumped by double-discharge circuits with semiconductor opening switch." In 18th International Symposium on Gas Flow & Chemical Lasers & High Power Lasers, edited by Tanja Dreischuh, Petar A. Atanasov, and Nikola V. Sabotinov. SPIE, 2010. http://dx.doi.org/10.1117/12.878396.

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Stoudt, D. C., J. S. Kenney, and K. H. Schoenbach. "INDUCTIVE ENERGY STORAGE USING A FAST-OPENING BULK OPTICALLY CONTROLLED SEMICONDUCTOR SWITCH (BOSS)." In Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512892.

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Kotov, Yu A., G. B. Mesyats, S. N. Rukin, A. L. Filatov, and S. K. Lyubutin. "A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOLOGY: EXP." In Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512960.

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Reports on the topic "Semiconductor opening switch"

1

Lee, Chi H., and Moon-Jhong Rhee. Repetitive Opening Switches Using Optically Activated Semiconductors. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada190196.

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