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Journal articles on the topic 'Semiconductor Nanostructures - Growth'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Aseev, Aleksander Leonidovich, Alexander Vasilevich Latyshev, and Anatoliy Vasilevich Dvurechenskii. "Semiconductor Nanostructures for Modern Electronics." Solid State Phenomena 310 (September 2020): 65–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.65.

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin-related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high-resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single-photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single-electron and single-photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro-, nano, optoelectronics and quantum devices.

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2

Witt, Elena, Jürgen Parisi, and Joanna Kolny-Olesiak. "Selective Growth of Gold onto Copper Indium Sulfide Selenide Nanoparticles." Zeitschrift für Naturforschung A 68, no. 5 (May 1, 2013): 398–404. http://dx.doi.org/10.5560/zna.2013-0016.

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Hybrid nanostructures are interesting materials for numerous applications in chemistry, physics, and biology, due to their novel properties and multiple functionalities. Here, we present a synthesis of metal-semiconductor hybrid nanostructures composed of nontoxic I-III-VI semiconductor nanoparticles and gold. Copper indium sulfide selenide (CuInSSe) nanocrystals with zinc blende structure and trigonal pyramidal shape, capped with dodecanethiol, serve as an original semiconductor part of a new hybrid nanostructure. Metallic gold nanocrystals selectively grow onto vertexes of these CuInSSe pyramids. The hybrid nanostructures were studied by transmission electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, and UV-Vis-absorption spectroscopy, which allowed us conclusions about their growth mechanism. Hybrid nanocrystals are generated by replacement of a sacrificial domain in the CuInSSe part. At the same time, small selenium nanocrystals form that stay attached to the remaining CuInSSe/Au particles. Additionally, we compare the synthesis and properties of CuInSSe-based hybrid nanostructures with those of copper indium disulfide (CuInS2). CuInS2/Au nanostructures grow by a different mechanism (surface growth) and do not show any selectivity.

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3

Gnawali, Guna Nidha, Shankar P. Shrestha, Khem N. Poudyal, Indra B. Karki, and Ishwar Koirala. "Study on the effect of growth-time and seed-layers of Zinc Oxide nanostructured thin film prepared by the hydrothermal method for liquefied petroleum gas sensor application." BIBECHANA 16 (November 22, 2018): 145–53. http://dx.doi.org/10.3126/bibechana.v16i0.21557.

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Gas sensors are devices that can convert the concentration of an analytic gas into an electronic signal. Zinc oxide (ZnO) is an important n-type metal oxide semiconductor which has been utilized as gas sensor for several decades. In this work, ZnO nanostructured films were synthesized by a hydrothermal route from ZnO seeds and used as a liquefied petroleum gas (LPG) sensor. At first ZnO seed layers were deposited on glass substrates by using spin coating method, then ZnO nanostructured were grown on these substrates by using hydrothermal growth method for different time duration. The effect of growth time and seed layers of ZnO nanostructured on its structural, optical, and electrical properties was studied. These nanostructures were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy, and four probes sheet resistance measurement unit. The sensing performances of the synthetic ZnO nanostructures were investigated for LPG.XRD showed that all the ZnO nanostructures were hexagonal crystal structure with preferential orientation. SEM reviled that the size of nanostructure increased with increase in growth time. Band gap and sheet resistance for ZnO nanostructured thin film decreased with increase in growth time. ZnO nanostructured thin film showed high sensitivity towards LPG gas. The sensitivity of the film is observed to increase with increase in no of seed layers as well as growth time. The dependence of the LPG sensing properties on the different growth time of ZnO nanostructured was investigated. The sensing performances of the film were investigated by measured change in sheet resistance under expose to LPG gas. BIBECHANA 16 (2019) 145-153

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4

Zhang, Li-De, and Xiao-Sheng Fang. "Controlled Growth and Characterization Methods of Semiconductor Nanomaterials." Journal of Nanoscience and Nanotechnology 8, no. 1 (January 1, 2008): 149–201. http://dx.doi.org/10.1166/jnn.2008.n02.

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One-dimensional (1D) semiconductor nanomaterials attract much attention because they are ideal systems for investigation and studying the relationship between properties and structures and having extensive application future in the high technical field. They are expected to play an important role in fabrication of the next generation nanocircuits, nanotools, nanowires lasers, photon tunneling devices, near-field photo-waveguide devices, etc. This article described controlled growth, characterization of structures and morphologies and properties of 1D semiconductor nanomaterials based on our previous works. This article is organized into two parts: The first part is complicated nanostructures of semiconductors, which includes coaxial nanocables, heterostructure nanowires and nanowires with metal–semiconductor junction behavior, hierarchical structures, doping of the nanowires and nanobelts, porous materials and periodically twined nanowires and asymmetrical polytypic nanobelts. The second part contains semiconductor nanoarrays based on anodic alumina membrane (AAM) templates. Finally, we propose that further investigation of the influence of nanomaterial morphologies on properties and how to design the morphology of nanostructures to meet the property requirements of nanodevices are our future research directions in this field.

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5

López-López, Máximo, Esteban Cruz-Hernández, Isaac Martínez-Velis, Juan Salvador Rojas-Ramírez, Manolo Ramirez-Lopez, and Álvaro Orlando Pulzara-Mora. "Self Assembly of semiconductor nanostructures." Respuestas 12, no. 2 (May 16, 2016): 47–51. http://dx.doi.org/10.22463/0122820x.570.

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Abstract In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.Keywords : Quantum wires, quantum dots; selfassembly; molecular beam epitaxy.

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6

Tan, Che, Chu Qin, and Bryce Sadtler. "Light-directed growth of metal and semiconductor nanostructures." Journal of Materials Chemistry C 5, no. 23 (2017): 5628–42. http://dx.doi.org/10.1039/c7tc00379j.

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7

Wen, Zhuoqun, Yiping Wang, Zhizhong Chen, and Jian Shi. "Chemical Vapor Growth of Silicon Phosphide Nanostructures." MRS Advances 5, no. 31-32 (November 25, 2019): 1653–60. http://dx.doi.org/10.1557/adv.2019.437.

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ABSTRACTIn the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO2/Si substrate. SiP islands with lateral size up to 20 μm and showing well-defined Raman signals were grown on SiO2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.

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8

Gyanwali, Gunanidhi. "Studying the Effect of Seed-layers of Zinc Oxide Nanostructured Thin Film for Liquefied Petroleum Gas Sensor Application." Molung Educational Frontier 10 (December 31, 2020): 41–49. http://dx.doi.org/10.3126/mef.v10i0.34056.

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Gas sensors are devices that can convert the concentration of an analyte gas into an electronic signal. Zinc oxide (ZnO) is one of the most important n-type metal oxide semiconductor which has been utilized as gas sensor for many years. In this work, ZnO nanostructured films were synthesized by a hydrothermal growth from ZnO seeds and used as a liquefied petroleum gas (LPG) sensor. At first ZnO seed layers were deposited on glass substrates by using spin coating method, then ZnO nanostructured were grown on these substrates by using hydrothermal growth method. The effect of seed layers of ZnO nanostructured on its structural, optical, and electrical properties was studied. These nanostructures were characterized by scanning electron microscopy, X-ray diffraction, optical spectroscopy, and sheet resistance measurement unit. The sensing performances of the synthetic ZnO nanostructures were investigated for LPG. XRD showed that all the ZnO nanostructures were hexagonal crystal structure. ZnO nanostructured thin film showed high sensitivity towards LPG gas. The sensitivity of the film is observed to increase with increase in number of seed layers. The sensitivity of the film was investigated by measured change in sheet resistance under with LPG gas.

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9

Kohno, H., T. Iwasaki, and S. Takeda. "Metal-mediated growth of alternate semiconductor–insulator nanostructures." Solid State Communications 116, no. 11 (October 2000): 591–94. http://dx.doi.org/10.1016/s0038-1098(00)00389-6.

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10

Suwito, Galih R., Vladimir G. Dubrovskii, Zixiao Zhang, Weizhen Wang, Sofiane Haffouz, Dan Dalacu, Philip J. Poole, Peter Grutter, and Nathaniel J. Quitoriano. "Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures." Nanomaterials 13, no. 5 (February 27, 2023): 894. http://dx.doi.org/10.3390/nano13050894.

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Controlling the morphology and composition of semiconductor nano- and micro-structures is crucial for fundamental studies and applications. Here, Si-Ge semiconductor nanostructures were fabricated using photolithographically defined micro-crucibles on Si substrates. Interestingly, the nanostructure morphology and composition of these structures are strongly dependent on the size of the liquid–vapour interface (i.e., the opening of the micro-crucible) in the CVD deposition step of Ge. In particular, Ge crystallites nucleate in micro-crucibles with larger opening sizes (3.74–4.73 μm2), while no such crystallites are found in micro-crucibles with smaller openings of 1.15 μm2. This interface area tuning also results in the formation of unique semiconductor nanostructures: lateral nano-trees (for smaller openings) and nano-rods (for larger openings). Further TEM imaging reveals that these nanostructures have an epitaxial relationship with the underlying Si substrate. This geometrical dependence on the micro-scale vapour–liquid–solid (VLS) nucleation and growth is explained within a dedicated model, where the incubation time for the VLS Ge nucleation is inversely proportional to the opening size. The geometric effect on the VLS nucleation can be used for the fine tuning of the morphology and composition of different lateral nano- and micro-structures by simply changing the area of the liquid–vapour interface.

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11

Kamarozaman, Nur Syahirah, Mohd Nor Asiah, Z. Aznilinda, Raudah Abu Bakar, Sukreen Hana Herman, and M. Rusop. "Effect of TiO₂ Seed Layer Thickness to the Growth of TiO₂ Nanostructures by Immersion Method for Memristive Device Application." Applied Mechanics and Materials 393 (September 2013): 63–67. http://dx.doi.org/10.4028/www.scientific.net/amm.393.63.

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TiO2 nanostructures were successfully grown on TiO2 thin film by solution-based method at low temperature. TiO2 thin film as a seed layer for the nanostructures growth was deposited on ITO substrate by RF magnetron sputtering method at 40 and 60 nm thicknesses. Then the TiO2 nanostructures were synthesized on the samples by keeping them floating with TiO2 layer facing down the vessel in 10M NaOH solution at 80°C for 45 min. Effect of seed layer thickness to the growth of TiO2 nanostructure and its memristive behaviour were investigated. Surface morphology and current-voltage measurement for its memristive behaviour were measured by FESEM image and Keithley 4200 semiconductor characterization system. It was found that 60 nm-TiO2 thin film result in the formation of dandelion-like morphology of TiO2 nanowires and gives better memristive behavior with larger switching loops when positive voltage was applied to the sample.

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12

Pinion, Christopher W., Joseph D. Christesen, and James F. Cahoon. "Understanding the vapor–liquid–solid mechanism of Si nanowire growth and doping to synthetically encode precise nanoscale morphology." Journal of Materials Chemistry C 4, no. 18 (2016): 3890–97. http://dx.doi.org/10.1039/c5tc03898g.

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Bottom-up, chemical methods to control the morphology of semiconductor nanostructures are a promising complement to the top-down fabrication techniques that currently dominate the semiconductor industry.

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13

Tseng, Tseung Yuen. "ZnO Nanostructures for Sensor Applications." Solid State Phenomena 185 (February 2012): 1–4. http://dx.doi.org/10.4028/www.scientific.net/ssp.185.1.

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The wide-gap semiconductor ZnO with nanostructures such as nanoparticles, nanorods, nanowires has high potential for a variety of sensor applications. This paper reviews the recent developments of ZnO one dimentional nanostructures for future gas sensor applications. Presented first is the factors contributing to the high performances of gas sensors using such nanostructures. Then various fabrication methods of the ZnO nanostructures including vapor phase growth, solution growth, and template-assisted growth are introduced. The characterization and properties of the ZnO nanostructures-based gas sensors are described. The basic mechanisms for explaining the behaviors of the gas sensors are also discussed.

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14

Chowdhury, Sisir, Nripendra N. Halder, and P. Banerji. "Growth and Characterization of MOCVD Grown Gallium Phosphide Nanostructures on Silicon Substrates." Advanced Materials Research 716 (July 2013): 281–85. http://dx.doi.org/10.4028/www.scientific.net/amr.716.281.

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Gallium Phosphide (GaP) nanostructures were grown on p-Si substrates by Metal Organic Chemical Vapor Deposition (MOCVD) to study the structure of low dimensional IIIV semiconductor on Si substrates. It is found that at a temperature of 540 °C, nanostructures with diameter 4080 nm and height 515 nm were obtained. The density of the nanostructures was found to be 1014 m-2. The UV-Vis-NIR spectra showed a blue shift of band gap. Photoluminescence measurements also confirmed the band gap enhancement.

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15

Leach, Gary W., Sasan V. Grayli, Finlay MacNab, Xin Zhang, and Saeid Kamal. "Hot Electron Extraction Enabled By Single-Crystal Metal Films and Nanostructures." ECS Meeting Abstracts MA2022-01, no. 13 (July 7, 2022): 925. http://dx.doi.org/10.1149/ma2022-0113925mtgabs.

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In contrast to conventional photovoltaic devices which rely on bulk semiconductor material absorption and separation of electron-hole pairs, surface plasmon-based solar energy harvesting employs rectifying metal/dielectric interfaces to capture light and separate charges. Here, we describe the requirements for efficient hot electron extraction in plasmonic photovoltaic devices and demonstrate a new scalable and environmentally friendly electroless deposition method for single-crystal epitaxial noble metals films and nanostructures. The method produces ultra-smooth, low loss, single-crystal noble metal films ideal for subtractive patterning of nanostructures through ion beam milling, and high definition, sub-wavelength single crystal nanostructures through lithographic patterning methods. We describe the nucleation and growth of these metal films and nanostructures in the absence and presence of anionic shape-control agents and examine the role of specific anions in determining the resulting film and nanostructure morphologies via scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). These effects have been exploited to yield large area patterned, and shape-controlled nanoarrays of single crystal metal nanostructures for plasmonic and metamaterial applications. These approaches offer new and cost effective routes to achieve crystalline, shape-controlled surface nanostructure to enable efficient hot electron extraction for energy harvesting and catalysis applications and new noble metal alloys for improved electrocatalysis.

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16

Wang, Jyh-Liang, Po-Yu Yang, Tsang-Yen Hsieh, Chuan-Chou Hwang, and Miin-Horng Juang. "pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/152079.

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Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

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17

Shvets, V. A. "Accuracy of ellipsometric monitoring during growth of semiconductor nanostructures." Optics and Spectroscopy 107, no. 5 (November 2009): 780–83. http://dx.doi.org/10.1134/s0030400x09110150.

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18

Denault, L., R. Klinger, ST Taylor, A. Alizadeh, C. Keimel, D. Hays, K. Krishnan, et al. "Templated Growth of Semiconductor Nanostructures through Block Copolymer Lithography." Microscopy and Microanalysis 12, S02 (July 31, 2006): 604–5. http://dx.doi.org/10.1017/s1431927606066086.

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19

Mathur, Sanjay, and Sven Barth. "One-Dimensional Semiconductor Nanostructures: Growth, Characterization and Device Applications." Zeitschrift für Physikalische Chemie 222, no. 2-3 (February 2008): 307–17. http://dx.doi.org/10.1524/zpch.2008.222.2-3.307.

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20

Schallenberg, T., C. Schumacher, and L. W. Molenkamp. "Projective techniques for the growth of compound semiconductor nanostructures." physica status solidi (a) 195, no. 1 (January 2003): 232–37. http://dx.doi.org/10.1002/pssa.200306291.

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21

SINGH, TRILOK, D. K. PANDYA, and R. SINGH. "GROWTH OF CdO AND ZnCdO-BASED NOVEL NANOSTRUCTURES USING ELECTROCHEMICAL DEPOSITION." International Journal of Nanoscience 10, no. 04n05 (August 2011): 827–31. http://dx.doi.org/10.1142/s0219581x11009258.

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CdO and ZnCdO alloy semiconductor nanostructures were obtained by means of cathodic deposition. Crystalline nanostructures of CdO and cadmium doped ZnO with cadmium concentration ranging from about 25% to 75% were electrodeposited onto the tin doped indium oxide (ITO) conducting glass substrates and subsequently annealed in air at 300°C and 600°C, respectively. X-ray diffraction showed that the nanostructures were of cubic crystallographic structure for CdO and at low doping concentration it showed wurtzite structure. Energy dispersive X-ray spectroscopy (EDS) results demonstrated that Cd , Zn and O elements existed in the deposited nanostructures. The incorporation of Cd content in the ZnO resulted in the band gap tuning of about 0.94 eV.

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22

Bai, Hua, Fang Ye, Qing Lv, Guangcheng Xi, Junfang Li, Haifeng Yang, and Chongqing Wan. "An in situ and general preparation strategy for hybrid metal/semiconductor nanostructures with enhanced solar energy utilization efficiency." Journal of Materials Chemistry A 3, no. 28 (2015): 14550–55. http://dx.doi.org/10.1039/c5ta03612g.

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23

Oh, Hongseok. "Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices." Ceramist 25, no. 4 (December 31, 2022): 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.

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Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or mechanical flexibility. In this paper, growth, structural properties, and optoelectronic device applications of semiconductor nanostructures or thin films which are heteroepitaxially grown on large-scale 2D nanomaterials are reviewed.

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24

Yang, Peidong. "The Chemistry and Physics of Semiconductor Nanowires." MRS Bulletin 30, no. 2 (February 2005): 85–91. http://dx.doi.org/10.1557/mrs2005.26.

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AbstractThe following article is based on the Outstanding Young Investigator Award presentation given by Peidong Yang of the University of California, Berkeley, on April 14, 2004, at the Materials Research Society Spring Meeting in San Francisco.Yang was cited for “innovative synthesis of a broad range of nanowires and nanowireheterostructure materials, and the discovery of optically induced lasing in individual nanowire devices.” One-dimensional nanostructures are of both fundamental and technological interest.They not only exhibit interesting electronic and optical properties associated with their low dimensionality and the quantum confinement effect, but they also represent critical components in potential nanoscale devices. In this article, the vapor–liquid–solid crystal growth mechanism will be briefly introduced for the general synthesis of nanowires of different compositions, sizes, and orientation. Unique properties, including light-emission and thermoelectricity, will be discussed. In addition to the recent extensive studies on “single-component” nanowires, of increasing importance is incorporating different interfaces and controlling doping profiles within individual single-crystalline nanowires. Epitaxial growth plays a significant role in fabricating such nanowire heterostructures. Recent research on superlattice nanowires and other nanostructures with horizontal junctions will be presented. The implication of these heterojunction nanowires in light-emission and energy conversion will be discussed. Ways to assemble these one-dimensional nanostructures will also be presented.

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25

Kanitkar, Prajakta, Manmeet Kaur, Shashwati Sen, Aditee Joshi, Vivek Kumar, S. K. Gupta, and J. V. Yakhmi. "Growth and gas-sensing studies of metal oxide semiconductor nanostructures." International Journal of Nanotechnology 7, no. 9/10/11/12 (2010): 883. http://dx.doi.org/10.1504/ijnt.2010.034696.

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26

Bimberg, D., F. Heinrichsdorff, N. N. Ledentsov, and V. A. Shchukin. "Self-organized growth of semiconductor nanostructures for novel light emitters." Applied Surface Science 159-160 (June 2000): 1–7. http://dx.doi.org/10.1016/s0169-4332(00)00152-5.

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27

Weng, X., W. Ye, S. J. Clarke, R. S. Goldman, V. Rotberg, A. Daniel, and R. Clarke. "Matrix-seeded growth of nitride semiconductor nanostructures using ion beams." Journal of Applied Physics 97, no. 6 (March 15, 2005): 064301. http://dx.doi.org/10.1063/1.1847726.

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28

Tan, Chaoliang, Zhiyuan Zeng, Xiao Huang, Xianhong Rui, Xue-Jun Wu, Bing Li, Zhimin Luo, et al. "Liquid-Phase Epitaxial Growth of Two-Dimensional Semiconductor Hetero-nanostructures." Angewandte Chemie International Edition 54, no. 6 (December 21, 2014): 1841–45. http://dx.doi.org/10.1002/anie.201410890.

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29

Tan, Chaoliang, Zhiyuan Zeng, Xiao Huang, Xianhong Rui, Xue-Jun Wu, Bing Li, Zhimin Luo, et al. "Liquid-Phase Epitaxial Growth of Two-Dimensional Semiconductor Hetero-nanostructures." Angewandte Chemie 127, no. 6 (December 21, 2014): 1861–65. http://dx.doi.org/10.1002/ange.201410890.

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30

Long, Gen, Kenneth Sabalo, Natalie MacDonald, Michael Beattie, and Mostafa Sadoqi. "Photocurrent Enhancement by Introducing Gold Nanoparticles in Nanostructures Based Heterojunction Solar Cell Device." MRS Advances 2, no. 15 (2017): 817–24. http://dx.doi.org/10.1557/adv.2017.146.

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ABSTRACTIn this paper, we report a first hand study of plasmon-enhanced photocurrent observed in hybrid nanostructures based heterojunction solar cell. The heterojunction solar cell was fabricated, using chemically synthesized narrow gap, IV-VI group semiconductor nanoparticles (PbS) of 3∼6nm diameter, wide gap semiconductor ZnO nanowires of 500nm∼1 μm length and ∼50nm diameter, and gold nanoparticles (∼5nm to 30nm), by spin-coating (∼20cycles) onto FTO glasses, in ambient conditions (25°C, 1atm). The synthesized nanostructures were characterized by XRD, UV-VIS absorption, SEM, TEM, solar simulator, etc. Nanostructures of variant sizes were integrated in to the heterojunction devices to study the effects on photocurrent and solar cell performance. The sizes, lengths, thickness of nanostructures were optimized to have best solar cell devices. The effects of fabrication conditions (such as growth temperature, growth time, anneal temperature, ligand treatments, in air or in N2, etc.) on device performance were also studied. The architecture of film stack, i.e., the positions of Au nanoparticles and PbS nanoparticles were also studied. It was confirmed that introducing Au nanopartiles with proper size would lead to the increase of photocurrent. The key challenges were to minimize the trap states and optimize the interface of nanostructures.

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31

Fissel, Andreas. "Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC." Materials Science Forum 483-485 (May 2005): 163–68. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.163.

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The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

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32

Ziembicki, Jakub, Paweł Scharoch, Maciej P. Polak, Michał Wiśniewski, and Robert Kudrawiec. "Band parameters of group III–V semiconductors in wurtzite structure." Journal of Applied Physics 132, no. 22 (December 14, 2022): 225701. http://dx.doi.org/10.1063/5.0132109.

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The properties of most III–V semiconductor materials in the wurtzite structure are not known because of their metastable character. However, recent advances in the growth of III–V wurtzite nanorods open new perspectives for applications. In this work, we present a systematic computational study of bulk wurtzite III–V semiconductors, using predictive ab initio methods, to provide a necessary base knowledge for studying the nanostructures. The most important physical properties of bulk systems, i.e., lattice constants, elasticity, spontaneous polarization, piezoelectricity, band structures, deformation potentials, and band offsets, have been studied. Comparison with the available experimental and theoretical data shows the high credibility of our results. Moreover, we provide a complete set of parameters for a six-band [Formula: see text] model, which is widely used for simulating devices based on semiconductor heterostructures.

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Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, Jihae Park, and Serge Zhuiykov. "Plasmonic Nanodomains Decorated on Two-Dimensional Oxide Semiconductors for Photonic-Assisted CO2 Conversion." Materials 16, no. 10 (May 11, 2023): 3675. http://dx.doi.org/10.3390/ma16103675.

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Plasmonic nanostructures ensure the reception and harvesting of visible lights for novel photonic applications. In this area, plasmonic crystalline nanodomains decorated on the surface of two-dimensional (2D) semiconductor materials represent a new class of hybrid nanostructures. These plasmonic nanodomains activate supplementary mechanisms at material heterointerfaces, enabling the transfer of photogenerated charge carriers from plasmonic antennae into adjacent 2D semiconductors and therefore activate a wide range of visible-light assisted applications. Here, the controlled growth of crystalline plasmonic nanodomains on 2D Ga2O3 nanosheets was achieved by sonochemical-assisted synthesis. In this technique, Ag and Se nanodomains grew on 2D surface oxide films of gallium-based alloy. The multiple contribution of plasmonic nanodomains enabled the visible-light-assisted hot-electron generation at 2D plasmonic hybrid interfaces, and therefore considerably altered the photonic properties of the 2D Ga2O3 nanosheets. Specifically, the multiple contribution of semiconductor–plasmonic hybrid 2D heterointerfaces enabled efficient CO2 conversion through combined photocatalysis and triboelectric-activated catalysis. The solar-powered acoustic-activated conversion approach of the present study enabled us to achieve the CO2 conversion efficiency of more than 94% in the reaction chambers containing 2D Ga2O3-Ag nanosheets.

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Reznik, R. R., K. P. Kotlyar, A. I. Khrebtov, and G. E. Cirlin. "Features of the MBE growth of nanowires with quantum dots on the silicon surface." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012032. http://dx.doi.org/10.1088/1742-6596/2086/1/012032.

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Abstract The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.

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35

Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, and Serge Zhuiykov. "Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions." Coatings 13, no. 6 (June 3, 2023): 1041. http://dx.doi.org/10.3390/coatings13061041.

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Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for application in nanofabrication technology. Plasma-enhanced atomic layer deposition (PE-ALD) enabled the deposition of ultra-thin nanostructures at low-growth temperatures. The present study used the PE-ALD process for the deposition of atomically thin crystalline ß-Ga2O3 films for heterointerface engineering at 2D metal-semiconductor heterojunctions. Via the control of plasma gas composition and ALD temperature, the wafer-scaled deposition of ~5.0 nm thick crystalline ß-Ga2O3 at Au/Ga2O3-TiO2 heterointerfaces was achieved. Material characterization techniques showed the effects of plasma composition and ALD temperature on the properties and structure of Ga2O3 films. The following study on the electronic characteristics of Au/Ga2O3-TiO2 2D heterojunctions confirmed the tunability of this metal/semiconductor polarized junction, which works as functional electron channel layer developed based on tunable p-n junctions at 2D metal/semiconductor interfaces.

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Petkov, Nikolay, Barbara Platschek, Michael A. Morris, Justin D. Holmes, and Thomas Bein. "Oriented Growth of Metal and Semiconductor Nanostructures within Aligned Mesoporous Channels." Chemistry of Materials 19, no. 6 (March 2007): 1376–81. http://dx.doi.org/10.1021/cm0627239.

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Silveira, J. P., J. M. Garcia, and F. Briones. "Surface stress effects during MBE growth of III–V semiconductor nanostructures." Journal of Crystal Growth 227-228 (July 2001): 995–99. http://dx.doi.org/10.1016/s0022-0248(01)00966-6.

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Madhukar, Anupam. "Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures." Thin Solid Films 231, no. 1-2 (August 1993): 8–42. http://dx.doi.org/10.1016/0040-6090(93)90701-p.

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Wang, Zumin, Lin Gu, Fritz Phillipp, Jiang Y. Wang, Lars P. H. Jeurgens, and Eric J. Mittemeijer. "Metal-Catalyzed Growth of Semiconductor Nanostructures Without Solubility and Diffusivity Constraints." Advanced Materials 23, no. 7 (December 27, 2010): 854–59. http://dx.doi.org/10.1002/adma.201002997.

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40

Xu, Bo, Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." Materials Science Forum 475-479 (January 2005): 1783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1783.

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This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

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Tomitori, Masahiko, and Toyoko Arai. "Germanium Nanostructures on Silicon Observed by Scanning Probe Microscopy." MRS Bulletin 29, no. 7 (July 2004): 484–87. http://dx.doi.org/10.1557/mrs2004.143.

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AbstractScanning tunneling microscopy and noncontact atomic force microscopy have been used to observe germanium growth on Si(001) and Si(111). The atomically resolved images provide invaluable information on heteroepitaxial film growth from the viewpoints of both industrial application and basic science. We briefly review the history of characterizing heteroepitaxial elemental semiconductor systems by means of scanning probe microscopy (SPM), where the Stranski–Krastanov growth mode can be observed on the atomic scale:the detailed phase transition from layer-by-layer growth to three-dimensional cluster growth was elucidated by the use of SPM. In addition, we comment on the potential of SPM for examining the spectroscopic aspects of heteroepitaxial film growth, through the use of SPM tips with well-defined facets.

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Millán, Brenda Carolina Pérez, César Eduardo Cea Montufar, Fabián Mendoza Hernández, and Erasto Vergara Hernández. "Photoluminescence of Silver-Doped ZnO Nanostructures." Key Engineering Materials 945 (May 19, 2023): 11–16. http://dx.doi.org/10.4028/p-64j9qy.

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The present work reviews the results of the photoluminescence (PL) study of silver-doped ZnO nanostructures synthesized by both physical and chemical methods. ZnO is a semiconductor with a binding energy of 60 meV, which ensures efficient near-band-edge band emission at a temperature of 300K and ultraviolet emission of bulk ZnO, and ZnO has a bandgap energy of 3.37 eV at room temperature. By tuning the growth process parameters of silver-doped ZnO nanostructures, the optical properties of ZnO can be controlled for use in various optoelectronic components, biosensors, blue-emitting diodes, and even white light sensors.

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Lu, Yi Ren, T. Ling, X. W. Du, P. F. Yin, H. Zhang, and X. Y. Chen. "One Step Growth of Semiconductor CdS Uniform Branched Nanowire on FTO." Applied Mechanics and Materials 472 (January 2014): 744–49. http://dx.doi.org/10.4028/www.scientific.net/amm.472.744.

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Recentaly, semiconductor nanowires (NWs) exhibit unique electrical, optical, and mechanical properties. Single crystalline CdS uniform branched Nanowire was synthesized by a simple, template-free, low-temperature synthesis of CdS uniform branched Nanowires with the hexagonal wurtzite phase from powder CdS under chemical vapor deposition (CVD) technique is demonstrated. It is shown through extensive spectroscopic and structural characterization that the nanostructures we prepared was branched morphology. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) used to study the crystalline structure, composition and morphology of different samples results for this series of Bi2S3seeds reveal major reaction consequences. Vaporliquidsolid (VLS) processes were proposed for the growth of the CdS uniform branched Nanowire. The results presented here presented the capacity to engineer nanowire p-n junctions exchange interactions via this strategies. Keywords:nanowire,Semiconductor,CVD

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Sakuraba, Masao, Katsutoshi Sugawara, and Junichi Murota. "Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures." ECS Transactions 25, no. 7 (December 17, 2019): 229–36. http://dx.doi.org/10.1149/1.3203960.

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Sharma, Vikas, Tapan Kumar Das, P. Ilaiyaraja, Athrey C Dakshinamurthy, and Sudakar C. "Growth of Sb2S3 semiconductor thin film on different morphologies of TiO2 nanostructures." Materials Research Bulletin 131 (November 2020): 110980. http://dx.doi.org/10.1016/j.materresbull.2020.110980.

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Glas, F., J. Coelho, G. Patriarche, and G. Saint-Girons. "Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures." Journal of Crystal Growth 275, no. 1-2 (February 2005): e1647-e1653. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.219.

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47

Coelho, J., G. Patriarche, F. Glas, I. Sagnes, and G. Saint-Girons. "Dislocation networks adapted to order the growth of III-V semiconductor nanostructures." physica status solidi (c) 2, no. 6 (April 2005): 1933–37. http://dx.doi.org/10.1002/pssc.200460528.

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48

Kabongo, Guy L., Gugu H. Mhlongo, and Mokhotjwa S. Dhlamini. "Unveiling Semiconductor Nanostructured Based Holmium-Doped ZnO: Structural, Luminescent and Room Temperature Ferromagnetic Properties." Nanomaterials 11, no. 10 (October 4, 2021): 2611. http://dx.doi.org/10.3390/nano11102611.

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This research work describes the synthesis of ZnO nanostructures doped with Ho3+ ions using a conventional sol–gel synthesis method. The nanostructured produced exhibited a wurtzite hexagonal structure in both ZnO and ZnO:Ho3+ (0.25, 0.5, 0.75 mol%) samples. The change in morphology with addition of Ho3+ dopants was observed, which was assigned to Ostwald ripening effect occurring during the nanoparticles’ growth. The photoluminescence emission properties of the doped samples revealed that Ho3+ was emitting through its electronic transitions. Moreover, reduced surface defects were observed in the Holmium doped samples whose analysis was undertaken using an X-ray Photoelectron Spectroscopy (XPS) technique. Finally, enhanced room temperature ferromagnetism (RT-FM) for Ho3+-doped ZnO (0.5 mol%) samples with a peak-to-peak line width of 452 G was detected and found to be highly correlated to the UV–VIS transmittance results.

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Lai, Zhiqiang, Yanjie Guo, and Peihui Yang. "Facile Synthesis, Characterization, Nanocrystal Growth and Photoluminescence Properties of GeS Nanowires." Nano 11, no. 12 (December 2016): 1650140. http://dx.doi.org/10.1142/s179329201650140x.

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As a IV–VI semiconductor, GeS is winning wide attention for its excellent properties. However, few examples of GeS nanostructures, especially those with photoluminescence (PL) properties, have been reported. After the optimization of reaction conditions, including time and temperature, the GeS nanowires with PL properties are synthesized a green, facile hydrothermal route without using any toxic reagent. These materials are characterized by transmission and scanning electron microscopy (TEM and SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), etc. With the average diameter of [Formula: see text]200[Formula: see text]nm and the length ranging from 1–25[Formula: see text][Formula: see text]m, the resulting GeS nanowires have relatively smooth surface and round top, and are oriented along [100] facet. The growth mechanism of GeS nanowires is investigated, and the understanding of their growth mechanism could provide helpful guidance for designing experimental conditions rationally to synthesize nanowires. Due to their special nanostructure, these nanowires possess very good fluorescent properties, which indicates that these nanowires have potential to apply in future optical nanodevices.

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Fricke, Jörg, Richard Nötzel, Uwe Jahn, Zhichuan Niu, Hans-Peter Schönherr, Manfred Ramsteiner, and Klaus H. Ploog. "Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures." Journal of Applied Physics 86, no. 5 (September 1999): 2896–900. http://dx.doi.org/10.1063/1.371138.

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