Relevant bibliographies by topics / Semiconductor nanocrystals

Academic literature on the topic 'Semiconductor nanocrystals'

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Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Semiconductor nanocrystals"

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Milliron, Delia J., Ilan Gur, and A. Paul Alivisatos. "Hybrid Organic–Nanocrystal Solar Cells." MRS Bulletin 30, no. 1 (January 2005): 41–44. http://dx.doi.org/10.1557/mrs2005.8.

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AbstractRecent results have demonstrated that hybrid photovoltaic cells based on a blend of inorganic nanocrystals and polymers possess significant potential for low-cost, scalable solar power conversion. Colloidal semiconductor nanocrystals, like polymers, are solution processable and chemically synthesized, but possess the advantageous properties of inorganic semiconductors such as a broad spectral absorption range and high carrier mobilities. Significant advances in hybrid solar cells have followed the development of elongated nanocrystal rods and branched nanocrystals, which enable more effective charge transport. The incorporation of these larger nanostructures into polymers has required optimization of blend morphology using solvent mixtures. Future advances will rely on new nanocrystals, such as cadmium telluride tetrapods, that have the potential to enhance light absorption and further improve charge transport. Gains can also be made by incorporating application-specific organic components, including electroactive surfactants which control the physical and electronic interactions between nanocrystals and polymer.
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Lin, Weyde M. M., Maksym Yarema, Mengxia Liu, Edward Sargent, and Vanessa Wood. "Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces." CHIMIA International Journal for Chemistry 75, no. 5 (May 28, 2021): 398–413. http://dx.doi.org/10.2533/chimia.2021.398.

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Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for process control and reproducibility. In this review, we use the example of well-studied lead sulfide (PbS) nanocrystals and describe the key advances in nanocrystal synthesis and thin-film fabrication that have enabled improvement in performance of photovoltaic devices. While research moves forward with novel nanocrystal materials, it is important to consider what decades of work on PbS nanocrystals has taught us and how we can apply these learnings to realize the full potential of nanocrystal solids as highly flexible materials systems for functional semiconductor thin-film devices. One key lesson is the importance of controlling and manipulating surfaces.
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Shen, Hao, Huabao Shang, Yuhan Gao, Deren Yang, and Dongsheng Li. "Efficient Sensitized Photoluminescence from Erbium Chloride Silicate via Interparticle Energy Transfer." Materials 15, no. 3 (January 30, 2022): 1093. http://dx.doi.org/10.3390/ma15031093.

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In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the semiconductor and erbium compound nanocrystals offers some important insights into the realization of efficient light emission for silicon-based integrated photonics.
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Alivisatos, A. Paul. "Semiconductor Nanocrystals." MRS Bulletin 20, no. 8 (August 1995): 23–32. http://dx.doi.org/10.1557/s0883769400045073.

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The following is an edited transcript of the presentation given by A. Paul Alivisatos, recipient of the Outstanding Young Investigator Award, at the 1995 MRS Spring Meeting in San Francisco.The work I will describe on semiconductor nanocrystals started with the realization that it is possible to precipitate a semiconductor out of an organic liquid. We can precipitate out a semiconductor as a colloid—a very small-sized semiconductor with reduced dimensionality—that will show large, quantum size effects. A dream at that time was to make an electronic material by such a process in a liquid beaker, by starting with an organic fluid and somehow injecting something into the fluid to make very small particles, which we could use in electronics. The materials we use in electronics today have perfect crystalline order. We are able to put in dopants very specifically, or control precisely their arrangements in space in enormously complicated ways. The level of purity of electronic materials is so high that making an electronic material in a wet chemistry approach seems almost impossible. If, in addition, we specify that the size must be controlled precisely, we recognize the project is a problem for basic research, yet not one ready for applications. Many fundamental problems arise if we try to make semiconductor particles, in a liquid, of such high quality that they can be used as electronic materials.
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Stein, Benjamin P. "Semiconductor nanocrystals." Physics Today 57, no. 6 (June 2004): 9. http://dx.doi.org/10.1063/1.4796571.

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SAPRA, SAMEER, RANJANI VISWANATHA, and D. D. SARMA. "ELECTRONIC STRUCTURE OF SEMICONDUCTOR NANOCRYSTALS: AN ACCURATE TIGHT-BINDING DESCRIPTION." International Journal of Nanoscience 04, no. 05n06 (October 2005): 893–99. http://dx.doi.org/10.1142/s0219581x05003851.

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We report a quantitatively accurate description of the electronic structure of semiconductor nanocrystals using the sp3d5 orbital basis with the nearest neighbor and the next nearest neighbor interactions. The use of this model for II–VI and III–V semiconductors is reviewed in article. The excellent agreement of the theoretical predictions with the experimental results establishes the feasibility of using this model for semiconductor nanocrystals.
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Utterback, James K., Jesse L. Ruzicka, Helena R. Keller, Lauren M. Pellows, and Gordana Dukovic. "Electron Transfer from Semiconductor Nanocrystals to Redox Enzymes." Annual Review of Physical Chemistry 71, no. 1 (April 20, 2020): 335–59. http://dx.doi.org/10.1146/annurev-physchem-050317-014232.

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This review summarizes progress in understanding electron transfer from photoexcited nanocrystals to redox enzymes. The combination of the light-harvesting properties of nanocrystals and the catalytic properties of redox enzymes has emerged as a versatile platform to drive a variety of enzyme-catalyzed reactions with light. Transfer of a photoexcited charge from a nanocrystal to an enzyme is a critical first step for these reactions. This process has been studied in depth in systems that combine Cd-chalcogenide nanocrystals with hydrogenases. The two components can be assembled in close proximity to enable direct interfacial electron transfer or integrated with redox mediators to transport charges. Time-resolved spectroscopy and kinetic modeling have been used to measure the rates and efficiencies of the electron transfer. Electron transfer has been described within the framework of Marcus theory, providing insights into the factors that can be used to control the photochemical activity of these biohybrid systems. The range of potential applications and reactions that can be achieved using nanocrystal–enzyme systems is expanding, and numerous fundamental and practical questions remain to be addressed.
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Lazzari, Stefano, Milad Abolhasani, and Klavs F. Jensen. "Modeling of the formation kinetics and size distribution evolution of II–VI quantum dots." Reaction Chemistry & Engineering 2, no. 4 (2017): 567–76. http://dx.doi.org/10.1039/c7re00068e.

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Mukhina, Maria V., Vladimir G. Maslov, Ivan V. Korsakov, Finn Purcell Milton, Alexander Loudon, Alexander V. Baranov, Anatoly V. Fedorov, and Yurii K. Gun’ko. "Optically active II-VI semiconductor nanocrystals via chiral phase transfer." MRS Proceedings 1793 (2015): 27–33. http://dx.doi.org/10.1557/opl.2015.652.

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ABSTRACTWe report optically active ensembles of II-VI semiconductor nanocrystals prepared via chiral phase transfer, which is initiated by exchange of the original achiral ligands capping the nanocrystals surfaces for chiral L- and D-cysteine. We used this method to obtain ensembles of CdSe, CdS, ZnS:Mn, and CdSe/ZnS quantum dots and CdSe/CdS quantum rods exhibited Circular Dichroism (CD) and Circularly Polarized Luminescence (CPL) signals. The optically active nanocrystals revealed the CD and CPL bands strongly correlated with absorption and luminescence bands with unique band “pattern” for each material and the nanocrystal shape.
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Yang, C. C., and Qing Jiang. "Size Effect on the Bandgap of Semiconductor Nanocrystals." Solid State Phenomena 121-123 (March 2007): 1069–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.1069.

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The size-dependent valence-conduction bandgap of semiconductor nanocrystals are predicted based on a model for size-dependent cohesive energy, without any adjustable parameter. The model predicts an increase of the bandgap of semiconductors with decreasing crystalline sizes. It is found that the model predictions are in good agreement with the available experimental results for Si, ZnS, ZnSe, CdS, and CdSe nanocrystals.
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Dissertations / Theses on the topic "Semiconductor nanocrystals"

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Yerci, Selcuk. "Spectroscopic Characterization Of Semiconductor Nanocrystals." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608177/index.pdf.

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Semiconductor nanocrystals are expected to play an important role in the development of new generation of microelectronic and photonic devices such as light emitting diodes and memory elements. Optimization of these devices requires detailed investigations. Various spectroscopic techniques have been developed for material and devices characterization. This study covers the applications of the following techniques for the analysis of nanocrystalline materials: Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, X-Ray Diffraction (XRD) and X-Ray Photoelectron (XPS). Transmission Electron Microscopy (TEM) and Secondary Ion Mass Spectrometry (SIMS) are also used as complementary methods. Crystallinity ratio, size, physical and chemical environment of the nanostructures were probed with these methods. Si and Ge nanocrystals were formed into the oxides Al2O3 and SiO2 by ion implantation, magnetron sputtering and laser ablation methods. FTIR and XPS are two methods used to extract information on the surface of the nanocrystals. Raman and XRD are non destructive and easy-to-operate methods used widely to estimate the crystallinity to amorphous ratio and the sizes of the nanocrystals. In this study, the structural variations of SiO2 matrix during the formation of Si nanocrystals were characterized by FTIR. The shift in position and changes in intensity of the Si-O-Si asymmetric stretching band of SiOx was monitored. An indirect metrology method based on FTIR was developed to show the nanocrystal formation. Ge nanocrystals formed in SiO2 matrix were investigated using FTIR, Raman and XRD methods. FTIR spectroscopy showed that Ge atoms segregate completely from the matrix at relatively low temperatures 900 oC. The stress between the Ge nanocrystals and the matrix can vary in samples produced by magnetron sputtering if the production conditions are slightly different. Si and Ge nanocrystals were formed into Al2O3 matrix by ion implantation of Si and Ge ions into sapphire matrix. Raman, XRD, XPS and TEM methods were employed to characterize the formed nanocrystals. XRD is used to estimate the nanocrystal sizes which are in agreement with TEM observations. The stress on nanocrystals was observed by Raman and XRD methods, and a quantitative calculation was employed to the Si nanocrystals using the Raman results. XPS and SIMS depth profiles of the sample implanted with Si, and annealed at 1000 oC were measured. Precipitation of Si atoms with the heat treatment to form the nanocrystals was observed using XPS. The volume fraction of the SiOx shell to the Si core in Si nanocrystals was found to be 7.9 % at projection range of implantation.
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Kudera, Stefan. "Formation of Colloidal Semiconductor Nanocrystals." Diss., lmu, 2007. http://nbn-resolving.de/urn:nbn:de:bvb:19-77315.

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Finlayson, C. E. "Optical characterisation of semiconductor nanocrystals." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599029.

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The achievement of luminescent nanocrystalline solid films, with good optical quality, will be crucial to the development of opto-electronic devices based on such materials. Although (CdSe)ZnS "core-shell" nanocrystals are typically found to have solution photoluminescence (PL) efficiencies in excess of 60%, the values associated with solid films are found to be an order of magnitude lower. Care of surface chemistry and control of nanocrystal/matrix interactions are of paramount importance. Furthermore, the PL efficiency exhibits a dependence on nanocrystal concentration consistent with a semi-quantitative model describing the effects of Förster energy transfer between nanocrystals and the associated trapping at surface sites. In addition to the ability to control optical properties by variation of the nanocrystal dimensions, it is also possible to alter the optical environment in which the nanocrystals are situated. By placing films of nanocrystals into high-Q, planar microcavities, it is possible to produce significant alteration of photoluminescence into very narrow resonant modes of the cavity. This is an important technical step towards the realisation of a nanocrystal laser. The combination of robust semiconductor emitters with the convenience of solution processing also offers considerable advantages over conventional molecular beam epitaxy (MBE) techniques. Finally, the PL emission from close-packed core-shell nanocrystalline thin films under intense picosecond UV excitation is studied. Strong, stable line-narrowing features are observed as the excitation intensity is increased, both at 77K and at room temperature; these are attributed to waveguiding and amplified spontaneous emission (ASE) in the films. Such behaviour would usually be considered as the signature of optical gain. Lasing from microcavities based on these films has yet to be observed, however, and a semi-empirical model of line-narrowing threshold intensities and cavity-photon lifetimes suggests that higher gain, lower losses or greater cavity finesse may be required for this.
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Fairclough, Simon Michael. "Carrier dynamics within semiconductor nanocrystals." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:857f624d-d93d-498d-910b-73cce12c4e0b.

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This thesis explores how the carrier dynamics within semiconductor nanocrystals can be directly engineered through specific core-shell design. Emphasis is placed on how material characteristics, such as strain or alloying at a core-shell interface, can influence the exciton energies and the recombination dynamics within semiconductor nanocrystals. This study synthesises type-II heterojunction ZnTe/ZnSe core-shell nanocrystals via a diethyl zinc-free synthesis method, producing small size distributions and quantum yields as high as 12%. It was found that the 7% lattice mismatch between the core and shell materials places limitations on the range of structures in which coherent growth is achieved. By developing compositional and strained atomistic core-shell models a variety of physical and optical properties could be simulated and has led to a clear picture of the core-shell architecture to be built. This characterisation provides evidence that the low bulk modulus ZnTe cores are compressed by the higher bulk modulus smaller lattice constant ZnSe shells. Further studies show how strain is manifested in structures with 'sharp' core-shell interfaces and how intentional alloying the interface can influence the growth and exciton energies. A (2-6)-band effective mass model was able to distinguish between the as-grown 'sharp' and 'alloyed' interfaces which indicated that strain accentuates the redshift of the excitonic state whilst reduced strain within an alloyed interface sees a reduced redshift. Single nanocrystal spectroscopy investigations of brightly emitting single graded alloyed nanocrystals and of a size series of commercially available CdSe/ZnS nanocrystals showed almost no fluorescence intermittency (nearly 'non-blinking'). These investigations also identified trion recombination as the main mechanism within the blinking 'off' state. Ultimately this thesis adds to the growing understanding of how specific core-shell architectures manipulate the electronic structure and develops techniques to identify specific material characteristics and how these characteristics influence the physical and optical properties within semiconductor nanocrystals.
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Lau, Pick Chung. "Novel Applications of Semiconductor Nanocrystals." Diss., The University of Arizona, 2013. http://hdl.handle.net/10150/297024.

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We have investigated ways of modifying a common water soluble CdTe NCs to become non-photobleaching. Such NCs are capable of responding reversibly to an inter-switching of the oxygen and argon environments over multiple hours of photoexcitation. They are found to quench upon exposure to oxygen, but when the system is purged with argon, their photoluminescence (PL) revives to the original intensity. Such discovery could potentially be used as oxygen nanosensors. These PL robust CdTe NCs immobilized on glass substrates also exhibit significant changes in their PL when certain organic/bio molecules are placed in their vicinity (nanoscale). This novel technique also known as NC-organic molecule close proximity imaging (NC-cp imaging) has found to provide contrast ratio greater by a factor of 2-3 compared to conventional fluorescence imaging technique. PL of NCs is recoverable upon removal of these organic molecules, therefore validating these NCs as potential all-optical organic molecular nanosensors and, upon optimization, ultimately serving as point detectors for purposes of super-resolution microscopy (with proper instrumentation). No solvents are required for this sensing mechanism since all solutions were dried under argon flow. Furthermore, core graded shell CdSe/CdSeₓS(1-x)/CdS giant nanocrystal (g-NCs) were found to have very robust PL temperature response. At a size of 10.2 nm in diameter, these g-NCs undergo PL drop of only 30% at 355K (normalized to PL intensity at 85K). In comparison, the core step shells CdSe/CdS g-NCs at the same diameter exhibit 80% PL drop at 355K. Spectral shifting and broadening were acquired and found to be 5-10 times and 2-4 times smaller respectively than the standard CdSe core and CdSe/CdS core shell NCs. It is also discovered that these core graded shell g-NCs are largely nonblinking and have insignificant photoluminescence decay even after exciting the samples at very high irradiance (44 kW/cm²) for over an hour. These types of g-NCs have great potential to be used as the active medium for temperature insensitive laser devices in the visible range or temperature insensitive bioprobes for bioimaging applications.
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Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.

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Sher, Pin-Hao. "Carrier Dynamics in Single Semiconductor Nanocrystals." Thesis, University of Oxford, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.514991.

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Hewa-Kasakarage, Nishshanka Niroshan. "Charge Separation in Heterostructured Semiconductor Nanocrystals." Bowling Green State University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1275766369.

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Klinkova, Anna. "Cation Exchange Reactions in Semiconductor Nanocrystals." Bowling Green State University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1308392960.

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Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

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Books on the topic "Semiconductor nanocrystals"

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Efros, Alexander L., David J. Lockwood, and Leonid Tsybeskov, eds. Semiconductor Nanocrystals. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9.

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1938-, Ėfros A. L., Lockwood David J, and Tsybeskov Leonid, eds. Semiconductor nanocrystals: From basic principles to applications. New York: Kluwer Academic / Plenum Publishers, 2003.

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Chen, Tupei, and Yang Liu, eds. Semiconductor Nanocrystals and Metal Nanoparticles. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &: CRC Press, 2016. http://dx.doi.org/10.1201/9781315374628.

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Peng, X., and D. M. P. Mingos, eds. Semiconductor Nanocrystals and Silicate Nanoparticles. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/b11020.

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Optical properties of semiconductor nanocrystals. Cambridge, UK: Cambridge Unviersity Press, 1998.

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X, Peng, Mingos, D. M. P., 1944-, and Bard Allen J, eds. Semiconductor nanocrystals and silicate nanoparticles. Berlin: Springer, 2005.

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Nanocrystals and quantum dots of group IV semiconductors. Stevenson Ranch, Calif: American Scientific Publishers, 2010.

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Quantum materials: Lateral semiconductor nanostructures, hybrid systems and nanocrystals. Berlin: Springer, 2010.

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B, Elliot Thomas, ed. New research on semiconductors. New York: Nova Science Publishers, 2006.

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W, Wise Frank, ed. Selected papers on semiconductor quantum dots. Bellingham, Wash: SPIE Press, 2005.

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Book chapters on the topic "Semiconductor nanocrystals"

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Zhu, Yimei, Hiromi Inada, Achim Hartschuh, Li Shi, Ada Della Pia, Giovanni Costantini, Amadeo L. Vázquez de Parga, et al. "Semiconductor Nanocrystals." In Encyclopedia of Nanotechnology, 2394. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100747.

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Borrelli, N. F. "Photonic Applications of Semiconductor-Doped Glasses." In Semiconductor Nanocrystals, 1–51. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_1.

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Efros, Alexander. "Auger Processes in Nanosize Semiconductor Crystals." In Semiconductor Nanocrystals, 52–72. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_2.

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Klimov, Victor I. "Carrier dynamics, optical nonlinearities, and optical gain in nanocrystal quantum dots." In Semiconductor Nanocrystals, 73–111. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_3.

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Brunner, Karl, and Artur Zrennert. "Novel Device Applications of Stranski-Krastanov Quantum Dots." In Semiconductor Nanocrystals, 112–51. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_4.

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Diener, J., N. Künzner, E. Gross, G. Polisski, and D. Kovalev. "Porous Silicon as an Open Dielectric Nanostructure: an Ensemble of Aspheric Silicon Nanocrystals." In Semiconductor Nanocrystals, 152–208. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_5.

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Tsybeskov, Leonid, and David J. Lockwood. "Nanocrystalline Silicon-Silicon Dioxide Superlattices: Structural and Optical Properties." In Semiconductor Nanocrystals, 209–38. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_6.

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Norris, David J., and Yurii A. Vlasov. "Quantum Dot Photonic Crystals." In Semiconductor Nanocrystals, 239–60. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3677-9_7.

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Erdem, Onur, and Hilmi Volkan Demir. "Colloidal Semiconductor Nanocrystals." In Oriented Self-Assembly of Colloidal Semiconductor Nanoplatelets on Liquid Interfaces, 5–13. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-7052-8_2.

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Gardelis, Spiros. "Silicon Nanocrystals." In Semiconductor Nanocrystals and Metal Nanoparticles, 191–213. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315374628-6.

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Conference papers on the topic "Semiconductor nanocrystals"

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Infante, Ivan. "Ligand Engineering in Colloidal Semiconductor Nanocrystals." In Internet NanoGe Conference on Nanocrystals. València: Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.incnc.2021.046.

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Shcheglov, K. V., C. M. Yang, and H. A. Atwater. "Photoluminescence and Electroluminescence of Ge-Implanted Si/SiO2/Si Structures." In Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.msab3.

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Although it was observation of efficient photoluminescence [PL] from porous silicon that prompted numerous investigations into the optoelectronic properties of group IV semiconductor nanocrystals, there is interest in other related materials which are more robust in various chemical and thermal ambients and which can be easily incorporated into standard silicon VLSI processing. A promising approach that meets the above requisites is synthesis of semiconductor nanocrystals in an SiO2 matrix accomplished by various techniques. In this letter we report on the fabrication of a Ge nanocrystal-based electroluminescent device using ion implantation and precipitation.
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Wang, Xiaoyong, Xiaofan Ren, Keith Kahen, Megan A. Hahn, Manju Rajeswaran, Sara Maccagnano-Zacher, John Silcox, George E. Cragg, Alexander L. Efros, and Todd D. Krauss. "Non-blinking Semiconductor Nanocrystals." In Laser Science. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/ls.2009.lstuj4.

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Le Thomas, N., O. Schops, U. Woggon, M. V. Artemyev, M. Kazes, and U. Banin. "CQED with semiconductor nanocrystals." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4629163.

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Sakhatskyi, Kostiantyn, Maryna Bodnarchuk, Eberhard Lehmann, Bernhard Walfort, Adrian Losko, Federico Montanarella, Kyle McCall, et al. "Fast Neutron Imaging with Semiconductor Nanocrystal Scintillators." In Internet NanoGe Conference on Nanocrystals. València: Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.incnc.2021.024.

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Mei, Guang, Scott Carpenter, L. E. Felton, and P. D. Persans. "Size dependence of quantum Stark effect in CdSxSe1-x nanocrystals." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.wt5.

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We report experimental electromodulation results on various sized CdS x Se1- x nanocrystals doped in a glass matrix. The samples were made by heat treatment and annealing of as-received filter glass from Schott. The size of the nanocrystals can be controlled from 40 to 200Å in diameter by annealing time. Transmission electron microscopy and absorption measurements were performed to get the size and volume fraction of semiconductor nanocrystals in the sample. Raman experiments indicated that the samples are CdS0.44Se0.56 and that the composition does not change with nanocrystal size. Electromodulation experiments were performed, and two strong peaks from the quantum-confined excitons were observed.
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Le Thomas, N., O. Schöps, U. Woggon, M. V. Artemyev, M. Kazes, and U. Banin. "Cavity QED with semiconductor nanocrystals." In Laser Science. Washington, D.C.: OSA, 2006. http://dx.doi.org/10.1364/ls.2006.lwe2.

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Osovsky, Ruth, Dima Cheskis, Viki Kloper, Leonid Fradkin, Aldona Sashchiuk, Martin Kroner, and Efrat Lifshitz. "Multiexcitons in Colloidal Semiconductor Nanocrystals." In International Quantum Electronics Conference. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.ifa2.

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Nataraj, Latha, Aaron Jackson, Lily Giri, Clifford Hubbard, and Mark Bundy. "Doped group-IV semiconductor nanocrystals." In 2013 IEEE International Nanoelectronics Conference (INEC). IEEE, 2013. http://dx.doi.org/10.1109/inec.2013.6466028.

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Banin, U., J. C. Lee, A. A. Guzelian, and A. P. Alivisatos. "Size Dependent Electronic Level Structure of Colloidal InAs Nanocrystal Quantum Dots." In Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.ctua.2.

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Abstract:
Semiconductor nanocrystals serve as model systems for evolution of bulk properties from the solid state to the molecular regime.1 In this work we study a fundamental question related with quantum confinement in semiconductors - the evolution of the electronic level structure with size in InAs nanocrystals.
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Reports on the topic "Semiconductor nanocrystals"

1

Hamad, K. S., R. Roth, and A. P. Alivisatos. Photoemission studies of semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603477.

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Fu, Aihua. Developing New Nanoprobes from Semiconductor Nanocrystals. Office of Scientific and Technical Information (OSTI), January 2006. http://dx.doi.org/10.2172/918615.

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Zhu, Xiaoyang. Extracting hot carriers from photoexcited semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1095091.

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Zhu, Xiaoyang. Extracting hot carriers from photoexcited semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1165192.

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Kadavanich, Andreas V. The structure and morphology of semiconductor nanocrystals. Office of Scientific and Technical Information (OSTI), November 1997. http://dx.doi.org/10.2172/588578.

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Klimov, Victor. Semiconductor Nanocrystals: Tiny Particles with “Quantum Powers”. Office of Scientific and Technical Information (OSTI), May 2021. http://dx.doi.org/10.2172/1784668.

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Chan, Emory Ming-Yue. Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors. Office of Scientific and Technical Information (OSTI), January 2006. http://dx.doi.org/10.2172/926707.

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Fedin, Igor. Colloidal Semiconductor Nanocrystals: Surface Chemistry, Photonics, and Electronics. Office of Scientific and Technical Information (OSTI), February 2020. http://dx.doi.org/10.2172/1599021.

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Fedin, Igor. Colloidal Semiconductor Nanocrystals: Surface Chemistry, Photonics, and Electronics. Office of Scientific and Technical Information (OSTI), February 2020. http://dx.doi.org/10.2172/1601369.

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Sadtler, Bryce F. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations. Office of Scientific and Technical Information (OSTI), May 2009. http://dx.doi.org/10.2172/970575.

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