Journal articles: 'Semiconductor module'

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Resutík, Patrik, and Slavomír Kaščák. "Compact 3 × 1 Matrix Converter Module Based on the SiC Devices with Easy Expandability." Applied Sciences 11, no. 20 (October 9, 2021): 9366. http://dx.doi.org/10.3390/app11209366.

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This paper discusses a new approach for building a compact all-in-one matrix converter module based on SiC semiconductors arranged in a common source connection. The used transistors are in the D2PAK package. The design of the module is divided into two parts, namely a power module designed at one-layer aluminum substrate printed circuit board (PCB) to ensure good thermal performance and voltage isolation between the module and heatsink. The second board is responsible for the SiC driving and is mounted at the top of the power PCB and consists of metal-oxide semiconductor field effect transistor (MOSFET) drivers, isolated power supplies, a current direction detection circuit, and current value sensors. In the paper, the proper function of the SiC MOSFET drivers, current direction detection, and current measurement sensors were evaluated. Finally, 3D design together with the final prototype is presented. The modules contain three bidirectional cells for interconnection three input voltage sources and one output phase. The uniqueness and novelty of the presented module are the compactness and easy expandability of the module to achieve higher power outputs and multiphase applications such as five phase machines.

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Seki, Kyoshiro, Yoshitaka Tsunekawa, Hiroshi Osada, Jun-Ichi Shida, and Koichi Murakami. "Multisensor module using magnetic semiconductor ferrite." Electronics and Communications in Japan (Part II: Electronics) 73, no. 4 (1990): 46–53. http://dx.doi.org/10.1002/ecjb.4420730406.

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Yau, Chin Horng, Wen Ren Jong, and H. H. Wang. "Design and Analysis of SCARA Substrate Transfer Robot for Semiconductor and FPD Processing Cluster Tools." Materials Science Forum 505-507 (January 2006): 331–36. http://dx.doi.org/10.4028/www.scientific.net/msf.505-507.331.

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The design criteria and dynamic analysis of SCARA substrate transfer robot for cluster tools have been investigated in this paper. The design criteria for SCARA robot to meet the application of semiconductor and flat panel display processing have been verified. The dynamic equations of decomposed modules of SCARA substrate transfer robot, such as arm module, friction module, servomotor module, harmonic drive module and belt module are formulated by Lagrange’s method respectively. Then, the dynamic equations are all built and simulated with MATLAB software. In addition, the elasticity characteristics of belt and harmonic drive are further discussed in this paper. In the aspect of control, the PID controller and force control method are both used to suppress the vibration and improve the transient response.

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Wang, Yangang, Yibo Wu, Xiaoping Dai, Steve Jones, and Guoyou Liu. "Investigation of Automotive Power Semiconductor Module Operates at Elevated Cooling Temperature." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000154–60. http://dx.doi.org/10.4071/hiten-session5-paper5_1.

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The degradation of performance and reliability of power semiconductor module with increment of temperature is an important issue to deal with in Hybrid and Electric Vehicles (HEV/EV) application. The high ambient and cooling temperatures are challenges to HEV/EV modules as the automotive industry is interested in cooling power electric system by sharing with engine's high temperature coolant. The elimination of low temperature cooling circuit has significant benefits to cost and volume/weight. However, the performance and reliability will be worsened to a large degree which may affect the feasibility of module application. In this work, an investigation is done to evaluate the electrical, thermal performance and reliability of a standard direct liquid cooled automotive IGBT module operates at 105°C coolant.

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Morgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

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Anzai, Takeshi, Yoshinori Murakami, Shinji Sato, Hidekazu Tanisawa, Kohei Hiyama, Hiroki Takahashi, Fumiki Kato, and Hiroshi Sato. "Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices." Journal of Microelectronics and Electronic Packaging 12, no. 3 (July 1, 2015): 153–60. http://dx.doi.org/10.4071/imaps.464.

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This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.

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Xu Dan, 徐丹, 黄雪松 Huang Xuesong, 姜梦华 Jiang Menghua, 惠勇凌 Hui Yongling, 雷訇 Lei Hong, and 李强 Li Qiang. "500 W fiber-coupled semiconductor laser module." Infrared and Laser Engineering 45, no. 6 (2016): 0606003. http://dx.doi.org/10.3788/irla201645.0606003.

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8

Abdesselam, A., P. J. Adkin, P. P. Allport, J. Alonso, L. Andricek, F. Anghinolfi, A. A. Antonov, et al. "The ATLAS semiconductor tracker end-cap module." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 575, no. 3 (June 2007): 353–89. http://dx.doi.org/10.1016/j.nima.2007.02.019.

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9

El-Awady, K., C. D. Schaper, and T. Kailath. "Programmable Thermal Processing Module for Semiconductor Substrates." IEEE Transactions on Control Systems Technology 12, no. 4 (July 2004): 493–509. http://dx.doi.org/10.1109/tcst.2004.824775.

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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11

Tyler, Neil. "Tiny Bluetooth Low Energy Soc and Module." New Electronics 51, no. 20 (November 12, 2019): 9. http://dx.doi.org/10.12968/s0047-9624(22)61475-5.

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Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

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13

Wang, Fengzhe. "A Fast Drying Machine Based On Semiconductor Heat Pump." E3S Web of Conferences 252 (2021): 02024. http://dx.doi.org/10.1051/e3sconf/202125202024.

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The new latent heat recovery type semiconductor heat pump ground fast dryer is a kind of integrated semiconductor refrigeration module on the traditional dryer. We simulated the process of the wind being heated by the hot end of the semiconductor refrigeration module under different working conditions through ANSYS software, so as to obtain the best solution for the semiconductor refrigeration module. Using the principles of drying and air condensation, we calculated the influence of the drying rate, drying time, and the condensation effect of the cold end when the air at different hot end inlet wind speeds, ambient temperature and moisture content blows the same amount of moisture on the ground. Through energy-saving analysis, our design saves about 60% energy compared with traditional electric heating style hair dryers. In the case of the same input power, the outlet air temperature of the semiconductor heat pump ground rapid dryer is significantly higher than that of the electric heating hair dryer. Therefore, when the ground is dry with the same amount of moisture, the use of the new semiconductor heat pump ground rapid dryer can significantly shorten drying time, the best drying time shortening rate is as high as 70%.

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Dutta, Atanu, and Simon S. Ang. "Design of a Low Inductance Power Module Based on Low Temperature Co-fired Ceramic." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (May 1, 2016): 000032–38. http://dx.doi.org/10.4071/2016cicmt-tp2a1.

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Abstract Efficient, compact, and reliable power electronic modules are building blocks of modern day power electronic systems. In recent times, wide bandgap semiconductor devices, such as, silicon carbide (SiC) and gallium nitride (GaN), are widely investigated and used in the power electronic modules to realize power dense, highly efficient, and fast switching modules for various applications. For high power applications is it required to parallel and series several devices to achieve high current and high voltage specifications, which results in larger current conducting traces. One of the major obstacles in using these wideband gap power semiconductor devices are the internal module stray inductance that is associated with these current conducting traces. With increasing demand for higher switching frequency, the internal module parasitic inductance must be reduced to as minimum as possible in order to utilize the full potential of the wide bandgap devices. A multi-layer approach of low-temperature co-fired ceramic (LTCC) to package the wide bandgap devices is investigated. The multi-layer design freedom by using LTCC can be utilized to reduce the footprint of the overall power module, electrical interconnects, hence, reducing the package parasitic inductance. LTCC also facilitates high temperature operations and has a coefficient of thermal expansion matching with wide bandgap devices. In this paper, we report on a LTCC based power module design where LTCC is utilized as an isolation layer between the source and the drain of the power devices. A simulation based parasitic inductance analysis and electro-thermal-mechanical study is performed using ANSYS Workbench Tools to investigate the feasibility of this LTCC based design.

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15

Štěpánek, Jan, Luboš Streit, and Tomáš Komrska. "Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications." TRANSACTIONS ON ELECTRICAL ENGINEERING 7, no. 1 (March 30, 2020): 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.

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The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.

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Zhuravleva, O. V., A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, and R. V. Chernov. "Reliability estimate for semiconductor laser module ILPN-134." Semiconductors 44, no. 3 (March 2010): 359–65. http://dx.doi.org/10.1134/s1063782610030152.

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17

Moed, Shulamit. "EndCap module production of the ATLAS Semiconductor Tracker." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 560, no. 1 (May 2006): 75–78. http://dx.doi.org/10.1016/j.nima.2005.11.237.

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18

Ushifusa, Nobuyuki, Hiroich Shinohara, Kousei Nagayama, Satoru Ogihara, and Tasao Soga. "4821142 Ceramic multilayer circuit board and semiconductor module." Microelectronics Reliability 29, no. 6 (January 1989): iii. http://dx.doi.org/10.1016/0026-2714(89)90151-0.

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Rodrigues, Ema G., Robert F. Herrick, James Stewart, Helena Palacios, Francine Laden, William Clark, and Elizabeth Delzell. "Case–control study of brain and other central nervous system cancer among workers at semiconductor and storage device manufacturing facilities." Occupational and Environmental Medicine 77, no. 4 (February 4, 2020): 238–48. http://dx.doi.org/10.1136/oemed-2019-106120.

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ObjectiveThis study evaluated the relationship between brain and other central nervous system cancer (‘CNS cancer’) and exposures at two semiconductor and electronic module manufacturing facilities and at a storage device manufacturing facility.MethodsThe case–control study, nested in a cohort of 126 836 employees, compared 120 CNS cancer cases and 1028 matched controls with respect to employment in 10 process groups and estimated cumulative exposure to 31 known or possible carcinogens.ResultsCNS cancer was associated with module manufacturing operations at two facilities. Module manufacturing is a process that begins with production of ceramic substrates followed by attachment of completed semiconductor chips and metal-containing circuitry resulting in a high performing electronic device. Positive associations with the highest tertile of estimated cumulative exposure were found for several chemicals, including 2-butoxyethanol, cyclohexanone, ortho-dichlorobenzene, cadmium, molybdenum, trichloroethylene and vinyl chloride.ConclusionsResults suggested positive associations between CNS cancer and specific operations and chemicals experienced in the semiconductor and electronic module manufacturing industry. However, lack of external support for these findings precludes a causal interpretation, and the observed associations may have been due to chance.

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Krismadinata, Rudi Mulya, and Monica Danni Juwita. "E-learning Courseware Development for Power Electronics Course." International Journal of Interactive Mobile Technologies (iJIM) 16, no. 03 (February 10, 2022): 66–81. http://dx.doi.org/10.3991/ijim.v16i03.27723.

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Based on the results of studies in the power electronics course, it shows that learning outcomes in the power components of semiconductors and inverter systems are not satisfactory. Innovation in teaching materials is an alternative to increasing this competency. This paper purposes a learning module through e-learning that is valid, practical, and effective, therefore it can improve student learning outcomes and motivation. This study uses a research and development method with the Plomp development model. The research subjects were electrical engineering education students taking power electronics courses. The data analysis technique used is descriptive analysis technique to describe the validity, practicality, and effectiveness of the learning module through e-learning. The result of the research is a learning module through e-learning that is valid, practical, and effective on the component material of semiconductor and inverter power systems that can improve student learning outcomes and learning motivation

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Chen, Zheng, Yiying Yao, Wenli Zhang, Dushan Boroyevich, Khai Ngo, Paolo Mattavelli, and Rolando Burgos. "Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications." Journal of Microelectronics and Electronic Packaging 13, no. 2 (April 1, 2016): 39–50. http://dx.doi.org/10.4071/imaps.503.

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This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

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Papanu, Victor. "Comparative Test Data for TIM Materials for LED Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000655–83. http://dx.doi.org/10.4071/2012dpc-ta41.

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Developments in thermal interface materials (TIMs) continue across the industry with a variety of different types of materials. Thermal and mechanical design engineers are often confronted with the need to select which type or category of TIM material is the most appropriate for a specific LED module application, which can be confusing, and how to determine which materials provide the best thermal performance. The next step is understanding which TIM material types meet requirements for ease of shipping, handling, placement, cost, and rework. These are important distinctions, in addition to thermal performance. This presentation will illustrate comparative testing results for a set of thermal interface materials (TIMs) in different categories, using different TIM testing procedures. Test data prepared using three different test methods will be compared:1. ASTM D5470-06 with known temperatures and clamping forces;2. In-situ testing with industry-standard semiconductor modules, at known temperatures and estimated clamping forces;3. In-situ testing utilizing a thermal test vehicle (TTV) for TIM2 performance for a processor module. In-situ testing has been performed at an independent power semiconductor manufacturer, using both industry-standard and commonly-available modules and a custom-designed module with a relatively small footprint, capable of high operating junction temperatures. This testing data can illustrate how different types of TIM materials perform in laboratory testing conditions, for precise comparisons on thermal performance alone; and how different types of materials perform in what are termed as “in-situ” test procedures. This term is used for application-specific conditions, where additional variables are encountered in the testing (such as non-flat surface conditions and unknown clamping force values), which is significantly different from the laboratory conditions used to generate ASTM D-5470 test values. The comparative testing that has been undertaken will be described, showing that images of various power semiconductors with several different materials tend to correlate with the thermal resistance of materials measured with the ASTM D 5470-06 method. These thermal interface materials were also tested on a TTV supplied by a major processor module. The relevance of the thermal imaging, the TTV and the ASTM values will be discussed. This presentation is intended to illustrate the differences in experimental data from one TIM material to another, as well as the differences in testing procedures.

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Fu, Shancan, Guoliang Wang, and Feng Xiao. "Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology." Journal of Physics: Conference Series 2370, no. 1 (November 1, 2022): 012012. http://dx.doi.org/10.1088/1742-6596/2370/1/012012.

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This paper presents a degradation behavior of high-power semiconductor modules, i.e., IGBT, with sintered silver by power cycle test and thermal cycle test. The electrical characteristics, such as on-state voltage drop, thermal resistance and leakage current, were studied. For power cycle test, the IGBT module still has an acceptable electrical performance after the 30 K power cycles. No noticeable changes can be found in the die-attach layer, while the DBC-attach layer begins to fail after 30 K power cycles. For the thermal cycling test, the electrical characteristics of the IGBT module were only tested within the first 300 cycles because the Al2O3 DBC substrate failed first before the failure of the bonding layers. Finally, finite element methods (FEM) were used to analyze thermal and mechanical stress distribution and failure mechanism of the bonding layers.

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Hunt, Bob. "The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000214–21. http://dx.doi.org/10.4071/hitec-bhunt-wa22.

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This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

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Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.

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Wang, Wei, Long Qing Zou, Hua Xu, You Wei An, Pei Fa Jia, Bo Li, and Yuan Luo. "A Design Method of Multiple Protocols Communication Module in Semiconductor Equipment Simulation Platform." Advanced Materials Research 462 (February 2012): 516–23. http://dx.doi.org/10.4028/www.scientific.net/amr.462.516.

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This paper presents a design method for communication module design in semiconductor equipment simulation platform. There are several kinds of standardized protocols in semiconductor equipments intra communication, the method with which these standardized protocols can be configured and integrated in single simulation platform. These protocols can be configured statically and dynamically respectively. In static state, protocol configuration provides various protocols for chosen and edit. In the dynamic state, the virtual devices can be communicated with control system with communication module. As a case study, a process chamber system simulator with designed the communication module has been illustrated. The designed communication module accomplishes the data transmission between control system and the chamber simulation system. The devices in chamber system receive the instruction form control system and execute the required actions. The experiment results show that the simulation platform is feasible and effective.

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Seal, Sayan, Michael D. Glover, and H. Alan Mantooth. "The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (May 1, 2016): 000065–72. http://dx.doi.org/10.4071/2016cicmt-tp2b1.

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Abstract This paper presents the plan and initial feasibility studies for an Integrated Wire Bondless Power Module (IWPM). Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices themselves owing to the advent of wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). SiC has capabilities of operating at much higher temperatures and faster switching speeds as compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high performance package of sufficient reliability. This paper lays the foundation for an electronic package which is designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability.

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Zhao, Ge, Yu Zhang, Yue Yang Liu, Jia Jie Che, Wen Yu Gao, Rui Jin, and Kun Shan Yu. "A Simulation Method of Pressure-Stress Affects Power Press Pack FRD Chip Forward Voltage." Applied Mechanics and Materials 433-435 (October 2013): 2121–24. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.2121.

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Press Pack IGBTs modules have the characteristics of easy series connection and double side cooling widely used in industry, electric power, smart grid and other fields. Press Pack FRD (Fast Recovery Diode) chips is a component of Press Pack IGBTs module. In the actual operating conditions, the electrical parameters of FRD device will change in the electrical properties under pressure-stress, especially the Forward Voltage (VF) parameters. This change of the VF parameters will have adverse effect on the reliability of FRD chip and the overall module. In this paper, according to the stress of physical model of semiconductor material silicon were analyzed, proposed method to stress effect on the VF parameter of the FRD simulation analysis software.

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ANZAI, Takeshi, Yoshinori MURAKAMI, Shinji SATO, Hidekazu TANISAWA, Kohei HIYAMA, Hiroki TAKAHASHI, Fumiki KATO, and Hiroshi SATO. "Sandwich Structured Power Module for High Temperature SiC Power Semiconductor Devices." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000757–62. http://dx.doi.org/10.4071/isom-wp54.

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A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.

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Kosenko, Roman, Liisa Liivik, Andrii Chub, and Oleksandr Velihorskyi. "Comparative Analysis of Semiconductor Power Losses of Galvanically Isolated Quasi-Z-Source and Full-Bridge Boost DC-DC Converters." Electrical, Control and Communication Engineering 8, no. 1 (July 1, 2015): 5–12. http://dx.doi.org/10.1515/ecce-2015-0001.

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Abstract This paper compares semiconductor losses of the galvanically isolated quasi-Z-source converter and full-bridge boost DC-DC converter with active clamping circuit. Operation principle of both converters is described. Short design guidelines are provided as well. Results of steady state analysis are used to calculate semiconductor power losses for both converters. Analytical expressions are derived for all types of semiconductor power losses present in these converters. The theoretical results were verified by means of numerical simulation performed in the PSIM simulation software. Its add-on module “Thermal module” was used to estimate semiconductor power losses using the datasheet parameters of the selected semiconductor devices. Results of calculations and simulation study were obtained for four operating points with different input voltage and constant input current to compare performance of the converters in renewable applications, like photovoltaic, where input voltage and power can vary significantly. Power loss breakdown is detailed and its dependence on the converter output power is analyzed. Recommendations are given for the use of the converter topologies in applications with low input voltage and relatively high input current.

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Fukuchi, Tomonori, Youichi Arai, Fusao Watanabe, Shinji Motomura, Shin'ichiro Takeda, Yousuke Kanayama, Hiromitsu Haba, Yasuyoshi Watanabe, and Shuichi Enomoto. "A Digital Signal Processing Module for Ge Semiconductor Detectors." IEEE Transactions on Nuclear Science 58, no. 2 (April 2011): 461–67. http://dx.doi.org/10.1109/tns.2011.2109968.

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32

Yang, Gui Lin. "Design of the Thermoelectric Generator." Advanced Materials Research 143-144 (October 2010): 543–46. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.543.

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Thermoelectric Generator is a device using the widespread natural temperature to generate electricity. On the basis of investigations and experiments, this paper fully expounded thermoelectric generator’s significance, system block diagram, circuits, operational principle, application foregrounds and etc. Semiconductor thermoelectric module and the controller compose the thermoelectric generator, semiconductor thermoelectric power modules change heat energy into electric energy, the electric energy is stored in the controller's battery by the charging circuit. The controller has many functions such as current limiting, under voltage and other functions. At the same time, we had also designed the step-up circuit, in this way, the thermoelectric generator can output higher voltage. The experiment results and application show the thermoelectric generator has good performance and powerful function, it is worth spreading.

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Sun, Wanjun, Lijiao Yang, Jianan Xie, Xiaxia Zhang, Yang Sha, Shuai Mi, and Tao Lin. "Thermal analysis and package optimization for the multi-wavelength laser bar module." Journal of Physics: Conference Series 2370, no. 1 (November 1, 2022): 012006. http://dx.doi.org/10.1088/1742-6596/2370/1/012006.

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To meet the demand of the laser application market for semiconductor laser function diversification, this paper proposes a handheld multi-wavelength laser stack packaging module. The 808 nm, 915 nm, and 980 nm semiconductor laser bars are selected for the integrated assembly of the multi-wavelength module. However, with the continuous increase of the optical power density of the integrated packaging module, thermal management has become a key factor affecting the performance and life of the device. In this paper, the finite element analysis method is used to analyze the influence of the arrangement of three laser stripe chips in the stacked packaging structure on the heat dissipation of the multi-wavelength module. The simulation results show that the heat dissipation efficiency of the multi-wavelength module can be improved by 13.74 % by changing the arrangement of chips. A back heat dissipation packaging structure with higher heat dissipation efficiency is proposed, and the influence of chip arrangement and working mode on the thermal characteristics of the device in the new packaging structure is simulated and analyzed. According to the simulation results, a chip arrangement that can make the heat dissipation effect of the multi-wavelength module achieve the best is determined.

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Чэн, Чаншань, and Антон Александрович Голянин. "Designing a Cooler With Natural Cold for A 100 kW Semiconductor Power Converter." Bulletin of Science and Practice, no. 8 (August 15, 2022): 317–24. http://dx.doi.org/10.33619/2414-2948/81/34.

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Предметом исследования является конструкция охладителя с естественной холодопроизводительностью для полупроводникового силового преобразователя мощностью 100 кВт. Целью данной работы является разработка охладителя с возможностью естественного охлаждения для полупроводникового силового преобразователя мощностью 100 кВт и оценка его практических свойств. В ходе исследования и испытаний охладителя полупроводникового силового преобразователя мощностью 100 кВт были определены параметры, которые стали основой для математического моделирования. В обобщаются ключевые вопросы и текущее состояние исследований в области силовых полупроводниковых модулей, включая вопросы теплового проектирования модулей и теплового моделирования. Степень реализации полная. В процессе разработки опытного устройства достигнуто снижение потерь энергозатрат и снижение взрывопожароопасности промышленного производства, что в свою очередь позволит повысить эффективность изобретения и снизить себестоимость его производства. Повышение эффективности - снижение потерь электропотребления, снижение взрывопожароопасности промышленных производств из-за перегрева силовых полупроводников. The subject of the study is the design of a cooler with natural cooling capacity for a 100 kW semiconductor power converter. The purpose of this thesis is to design a cooler with natural cooling capability for a 100 kW semiconductor power converter and to evaluate its practical effects. We summarize the demand for power semiconductor devices for new applications in power electronics in recent years. During the study and testing of the cooler for the 100 kW semiconductor power converter, the parameters that became the basis for mathematical modeling were determined. In this paper, we summarize the key issues and the current state of research on power semiconductor modules, including module thermal design and thermal modeling issues. The degree of realization is complete. In the process of developing the experimental device, reduction of energy consumption losses and reduction of explosion and fire hazards in industrial production facilities was achieved, which in turn will increase the efficiency of the invention and reduce its production costs. Development of efficiency - reduction of power consumption losses, reduction of explosion and fire hazards in industrial production facilities due to overheating of power semiconductors.

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Sun, Shou Lei, Gui Tang Wang, Ying Ge Li, and Zheng Li. "Research on Testing Technology of CMOS Camera Module." Applied Mechanics and Materials 378 (August 2013): 408–12. http://dx.doi.org/10.4028/www.scientific.net/amm.378.408.

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After the completion of the CMOS(Complementary Metal-Oxide-Semiconductor Transistor) camera module assembly,in order to test the image quality of module. In this paper, based on the ISO12233 standard chart proposing a CMOS camera module modulation transfer function MTF (modulation transfer function) of test method, MTF average value calculated for each module with high contrast and grayscale method, and validation processing to detect unqualified imaging module. The results show that MTF detection method used in this paper can quickly and accurately detect the quality camera module, and stable and reliable, playing an important role to found the quality problems and improve the efficiency of production.

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Han, Yi Lun, Zong Bing Zhang, and Xue Lei Wen. "Visual Intelligent Vehicle Control System’s Design Based on PC9S12XS128 MCU." Advanced Materials Research 562-564 (August 2012): 1571–74. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.1571.

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In this paper, PC9S12XS128 MCU produced by Freescale Semiconductor Co., Ltd is used as the core control unit to designed a intelligent vehicle, which can be free to follow the line of travel. The main control system including motor drive module, server drive module, the path identification module, power module, etc..Through compare a variety of hardware control program, use the best program to take control of car model’s speed and direction. Experimental results show that the intelligent vehicle designed can antomatic driving on the path of human plan accuracy.

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Ning, Puqi, Fred Wang, and Khai D. T. Ngo. "High Temperature SiC Power Module Electrical Evaluation Procedure." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000336–42. http://dx.doi.org/10.4071/hitec-pning-tha13.

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In order to take full advantage of SiC semiconductor devices, high temperature device packaging needs to be developed. The potential defects in design and fabrication procedure are detailed and their detection steps in the electrical evaluation are presented. The established systematic testing procedure can rapidly detect defects and reduce the risk in high temperature packaging testing. The multi-chip module development procedure is also presented and demonstrated with an example.

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Seal, Sayan, Michael D. Glover, and H. Alan Mantooth. "The Design and Evaluation of an Integrated Wire Bond-less Power Module using a Low Temperature Co-fired Ceramic Interposer." Journal of Microelectronics and Electronic Packaging 13, no. 4 (October 1, 2016): 169–75. http://dx.doi.org/10.4071/imaps.514.

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This article presents the plan and initial feasibility studies for an Integrated Wire Bond-less Power Module. Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices owing to the advent of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride. SiC has capabilities of operating at much higher temperatures and faster switching speeds compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High-performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high-performance package of sufficient reliability. This article lays the foundation for an electronic package designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability. The interconnections between the gate drive circuitry and the power devices were implemented using a low temperature cofired ceramic interposer.

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Machado da Silva, Jamir, Renan Eduardo da Silva, José Rui Camargo, and Ederaldo Godoy Junior. "Optimization of a Thermoelectric Air Conditioning Systems." Defect and Diffusion Forum 336 (March 2013): 111–20. http://dx.doi.org/10.4028/www.scientific.net/ddf.336.111.

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This paper studies the optimization of a thermoelectric cooling system of air. Based on both results obtained experimentally and from a mathematical model, we evaluated the available features of thermoelectric modules and parameters subject to optimization. In the thermoelectric cooling air process based on the effect discovered by Jean Peltier Charles Athanase in 1834, when an electrical current is conducted through a semiconductor junction between two materials with different properties, heat is absorbed and dissipated. Thermoelectric modules are made of semiconductor materials and sealed between two plates. According to the shape of the plate, the current flow cools the one hand and the other is heated. The most important parameters to evaluate the efficiency of the thermoelectric cooling is the coefficient of performance, the rate of heat transfer and temperature difference between the maximum possible to the cold and hot sides of the thermoelectric module. In this evaluation were used thermoelectric modules and heat sinks, commercially available temperature sensors and a software for obtaining, storing and comparing the data. The prototype auxiliary allows the surface temperatures of thermoelectric modules of the hot and cold sides, the air inlet and outlet temperatures of the heat sink sides of the hot and cold air flow, the voltage and the electrical current to be applied to the modules. A simulation is performed using two air flows at a speed controlled for the hot and cold sides of the module and a set of tests for various modules, i.e. one, two, three and four coupled in parallel. Using this system, the performance data is analyzed making it possible to check the power, voltage and electrical current to maximize the coefficient of performance of the system.

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Sato, Shinya, Hidekazu Tanisawa, Takeshi Anzai, Hiroki Takahashi, Yoshinori Murakami, Fumiki Kato, Kinuyo Watanabe, and Hiroshi Sato. "Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range." Materials Science Forum 858 (May 2016): 1066–69. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1066.

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In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

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Donghan Lee, Gwan-Chong Joo, Kwang-Ryong Oh, Hee-Tae Lee, Nam Hwang, Sang-Hwan Lee, Seong-Su Park, Min-Kyu Song, and Seung-Goo Kang. "Fabrication of semiconductor optical switch module using laser welding technique." IEEE Transactions on Advanced Packaging 23, no. 4 (2000): 672–80. http://dx.doi.org/10.1109/6040.883757.

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Raja, Arslan S., Junqiu Liu, Nicolas Volet, Rui Ning Wang, Jijun He, Erwan Lucas, Romain Bouchandand, Paul Morton, John Bowers, and Tobias J. Kippenberg. "Chip-based soliton microcomb module using a hybrid semiconductor laser." Optics Express 28, no. 3 (January 21, 2020): 2714. http://dx.doi.org/10.1364/oe.28.002714.

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43

Wood-Hi Cheng, Maw-Tyan Sheen, Chih-Pen Chien, Hung-Lun Chang, and Jao-Hwa Kuang. "Reduction of fiber alignment shifts in semiconductor laser module packaging." Journal of Lightwave Technology 18, no. 6 (June 2000): 842–48. http://dx.doi.org/10.1109/50.848395.

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44

Vertiy, A. A., I. V. Ivanchenko, N. A. Popenko, S. I. Tarapov, and V. P. Shestopalov. "High frequency module and semiconductor research in low-temperature range." International Journal of Infrared and Millimeter Waves 12, no. 10 (October 1991): 1195–203. http://dx.doi.org/10.1007/bf01008562.

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Matsumori, Tadayoshi, Atsushi Kawamoto, and Tsuguo Kondoh. "Topology optimization for thermal stress reduction in power semiconductor module." Structural and Multidisciplinary Optimization 60, no. 6 (August 2, 2019): 2615–20. http://dx.doi.org/10.1007/s00158-019-02341-4.

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Giaretto, Valter, and Elena Campagnoli. "The Elusive Thomson Effect in Thermoelectric Devices. Experimental Investigation from 363 K to 213 K on Various Peltier Modules." Metals 10, no. 2 (February 23, 2020): 291. http://dx.doi.org/10.3390/met10020291.

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At steady state, in the governing equation of one-stage thermoelectric cooler, the heat resulting from Fourier conduction is balanced by heat generation due to the Joule and Thomson effects inside semiconductors. Since the heat flux observed at the junction of a semiconductor, r pair includes the Peltier effect and the Fourier heat flux caused by both the aforementioned contributions, the Thomson effect is easily masked by the Joule heat, which makes it elusive. With the aim of highlighting the contribution of the Thomson effect, measurements were carried out in the temperature range from 363 K to 213 K on different Peltier modules. The temperature dependence of the Seebeck and Thomson coefficients was evaluated as well as the electrical resistivity, and thermal conductivity of the Peltier modules examined. The results obtained show that the temperature dependence of the thermoelectric properties can reduce the cooling capacity of the Peltier module compared to what is declared in the technical datasheets of the commercial devices. The analyses allow us to conclude that an increase in the Thomson effect could have a positive effect on the performance of the Peltier only if it were possible to reduce the Joule contribution simultaneously.

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OSONE, Yasuo, Norio NAKAZATO, Yasunari UMEMOTO, and Mikio NEGISHI. "Thermal Design of Power Semiconductor Modules for Mobile Communication System (Numerical Estimation of Module Thermal Resistance)." Transactions of the Japan Society of Mechanical Engineers Series B 71, no. 708 (2005): 2139–46. http://dx.doi.org/10.1299/kikaib.71.2139.

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Shin, Woo, Suk Ko, Hyung Song, Young Ju, Hye Hwang, and Gi Kang. "Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature." Energies 11, no. 9 (September 12, 2018): 2416. http://dx.doi.org/10.3390/en11092416.

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Bypass diodes have been widely utilized in crystalline silicon (c-Si) photovoltaic (PV) modules to maximize the output of a PV module array under partially shaded conditions. A Schottky diode is used as the bypass diode in c-Si PV modules due to its low operating voltage. In this work, we systematically investigated the origin of bypass diode faults in c-Si PV modules operated outdoors. The temperature of the inner junction box where the bypass diode is installed increases as the ambient temperature increases. Its temperature rises to over 70 °C on sunny days in summer. As the temperature of the junction box increases from 25 to 70 °C, the leakage current increases up to 35 times under a reverse voltage of 15 V. As a result of the high leakage current of the bypass diode at high temperature, melt down of the junction barrier between the metal and semiconductor has been observed in damaged diodes collected from abnormally functioning PV modules. Thus, it is believed that the constant leakage current applied to the junction caused the melting of the junction, thereby resulting in a failure of both the bypass diode and the c-Si PV module.

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Gadzhieva, S. M., T. A. Chelushkina, D. S. Gadzhiev, P. S. Magomedova, and I. M. Kurbanov. "Precision thermoelectric semiconductor sensor." Herald of Dagestan State Technical University. Technical Sciences 48, no. 4 (February 9, 2022): 6–15. http://dx.doi.org/10.21822/2073-6185-2021-48-4-6-15.

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Objective. The aim of the study is to develop a precision thermoelectric semiconductor sensor. Method. In the course of the study, a balanced method was applied, based on the fact that instead of a temperature difference, the thermal module will measure the coincidence of temperatures. Result. The use of a thermoelectric semiconductor sensor practically reduces the error when measuring the temperature of the environment or the object under study. The thermoelectric semiconductor sensor with the Peltier effect can operate in an economical mode, without wasting energy for measuring the temperature. Conclusion. The thermoelectric semiconductor sensor operates in an adaptive temperature measurement mode, allowing you to adjust a functional sensor to measure temperature with the required accuracy depending on the object under study, as well as stabilize the melt or boiling boundary in a container in contact with a digital thermoelectric device.

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Alizadeh, Rana, Kaoru Uema Porter, Tom Cannon, and Simon S. Ang. "Fabrication of Ceramic Interposers for Module Packaging." Journal of Microelectronics and Electronic Packaging 17, no. 2 (April 1, 2020): 67–72. http://dx.doi.org/10.4071/imaps.1114553.

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Abstract In this study, low-temperature cofired ceramic (LTCC) and 3D-printed ceramic interposers are designed and fabricated for a double-sided power electronic module. The interposer acts as electrical insulation between two direct-bond copper (DBC) power substrates as well as mechanical support to evenly distribute the weight of the top DBC substrate onto the entire bottom DBC substrate instead of directly onto the bare power semiconductor die. A novel LTCC fabrication process for 14 layers of green tapes with premachined recesses and holes is developed. A similar interposer is 3D printed using a ceramic resin. Finally, the fabricated LTCC and 3D-printed interposers are compared.

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Journal articles on the topic 'Semiconductor module'

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