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Books on the topic 'Semiconductor module'

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Author: Grafiati

Published: 14 March 2023

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1

International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.

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2

Corporation, Mitsubishi Electric. Mitsubishi semiconductors: Memories module : data book. Tokyo: Mitsubishi Electric Corporation, 1992.

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3

Corporation, Mitsubishi Electric. Mitsubishi semiconductors 1994: Memories module (data book). Tokyo: Mitsubishi Electric Corporation, 1994.

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4

International, Semikron, ed. Application manual power modules. Ilmenau: ISLE, 2000.

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5

P, Colino Ronald, ed. Power electronic modules: Design and manufacture. Boca Raton: CRC Press, 2005.

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6

Baranowski, Jerzy Hubert. Sekcyjne modele ładunkowe diod i tranzystorów bipolarnych. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1985.

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7

Snowden, Christopher M. Semiconductor device modelling. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1988.

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8

Christopher, Snowden, ed. Semiconductor device modelling. London: Springer-Verlag, 1989.

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9

Marvin, Coughran William, ed. Semiconductors. New York: Springer-Verlag, 1994.

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10

The stationary semiconductor device equations. Wien: Springer-Verlag, 1986.

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11

M, Snowden Christopher, and Miles R. E. 1943-, eds. Compound semiconductor device modelling. London: Springer-Verlag, 1993.

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12

Introduction to semiconductor device modelling. Singapore: World Scientific, 1986.

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13

E, Carroll John. Distributed feedback semiconductor lasers. London, UK: The Institution of Electrical Engineers, 1998.

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14

1957-, Ringhofer C. A., and Schmeiser C. 1958-, eds. Semiconductor equations. Wien: Springer-Verlag, 1990.

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15

Veprek, Ratko G. Computational modeling of semiconductor nanostructures for optelectronics. Konstanz: Hartung-Gorre, 2009.

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16

Kircher, R. Three-dimensional simulation of semiconductor devices. Basel: Birkhäuser Verlag, 1991.

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17

Kircher, R. Three-dimensional simulation of semiconductor devices. Basel: Birkhäuser Verlag, 1991.

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18

Kells, Kevin. General electrothermal semiconductor device simulation. Konstanz: Hartung-Gorre Verlag, 1994.

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19

Quantum-mechanical modeling of transport parameters for MOS devices. Konstanz: Hartnung-Gorre, 2006.

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20

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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21

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.

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22

1919-, Finlayson D. M., ed. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.

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23

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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24

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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25

Molenaar, J. Multigrid methods for semiconductor device simulation. Amsterdam, the Netherlands: Centrum voor Wiskunde en Informatica, 1993.

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26

M, Meyyappan, ed. Computational modeling in semiconductor processing. Boston: Artech House, 1995.

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27

Marchenko, Aleksey, and Mihail Nemcov. Electronics. ru: INFRA-M Academic Publishing LLC., 2023. http://dx.doi.org/10.12737/1587595.

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Abstract:

The material of module 2 "Electronics" is systematically presented in accordance with the modern university program of the discipline " Electrical Engineering and Electronics" for non-electrotechnical areas of training of bachelors and certified specialists. The element base of semiconductor electronics devices is considered: classification, voltage and frequency characteristics, features of the use of electronic devices in various operating modes are given. The principles of construction and functioning of typical analog, pulse and digital devices are described in detail. A separate chapter is devoted to the principles of converting light energy into electrical energy and vice versa, the design and operation of optoelectronic devices and fiber- optic lines of information transmission. Meets the requirements of the federal state educational standards of higher education of the latest generation. For students of higher educational institutions studying in non-electro- technical areas of bachelor's and graduate training.

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28

1955-, Selberherr Siegfried, Stippel H, Strasser E, and International Conference on Simulation of Semiconductor Devices and Processes (5th : 1993 : Technical University of Vienna, Austria), eds. Simulation of semiconductor devices and processes, vol. 5. Vienna: Springer-Verlag, 1993.

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29

Moglestue, C. Monte Carlo simulation of semiconductor devices. London: Chapman & Hall, 1993.

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30

Tomizawa, Kazutaka. Numerical simulation of submicron semiconductor devices. Boston: Artech House, 1993.

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31

Gruber, Harald. Learning and strategic product innovation: Theory and evidence for the semiconductor industry. Amsterdam: North-Holland, 1994.

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32

B, Elliot Thomas, ed. Trends in semiconductor research. Hauppauge, N.Y: Nova Science Publishers, 2005.

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33

B, Elliot Thomas, ed. Focus on semiconductor research. Hauppauge, N.Y: Nova Science Publishers, 2005.

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34

Transport equations for semiconductors. Berlin: Springer, 2009.

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35

Schneider, Lutz. Multidimensional modeling and simulation of wavelength-tunable semiconductor lasers. Konstanz: Hartung-Gorre, 2006.

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36

Wilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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37

L, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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38

L, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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39

Hisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.

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40

Odermatt, Stefan. Physics and simulation of semiconductor lasers: Static and dynamic characteristics. Konstanz: Hartung-Gorre, 2006.

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41

Balance equation approach to electron transport In semiconductors. Hackensack, NJ: World Scientific, 2008.

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42

Bürgler, Josef F. Discretization and grid adaptation in semiconductor device modeling. Konstanz: Hartung-Gorre, 1990.

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43

International Conference on Simulation of Semiconductor Processes and Devices (12th 2007 Vienna, Austria). Simulation of semiconductor processes and devices, 2007: SISPAD 2007. Wien: Springer Verlag, 2007.

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44

Jerome, Joseph W. Analysis of charge transport: A mathematical study of semiconductor devices. Berlin: Springer-Verlag, 1996.

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45

Engström, Olof. The MOS system. Cambridge: Cambridge University Press, 2014.

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46

International Workshop on the Numerical Modelling of Semiconductors (1st 1986 Los Angeles, Calif.). Fundamental research on the numerical modelling of semiconductor devices and processes: Papers from NUMOS I, the First International Workshop on the Numerical Modelling of Semiconductors, 11th-12th December 1986, Los Angeles, USA. Dún Laoghaire, Co. Dublin, Ireland: Boole, 1987.

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47

Duen, Ho Fat, and United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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48

Duen, Ho Fat, and United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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49

Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.

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50

International Conference on Simulation of Semiconductor Processes and Devices (2004 Munich, Germany). Simulation of semiconductor processes and devices 2004: SISPAD 2004. Wien: Springer, 2004.

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