Relevant bibliographies by topics / Semiconductor module

Academic literature on the topic 'Semiconductor module'

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Published: 14 March 2023

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Journal articles on the topic "Semiconductor module"

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Resutík, Patrik, and Slavomír Kaščák. "Compact 3 × 1 Matrix Converter Module Based on the SiC Devices with Easy Expandability." Applied Sciences 11, no. 20 (October 9, 2021): 9366. http://dx.doi.org/10.3390/app11209366.

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This paper discusses a new approach for building a compact all-in-one matrix converter module based on SiC semiconductors arranged in a common source connection. The used transistors are in the D2PAK package. The design of the module is divided into two parts, namely a power module designed at one-layer aluminum substrate printed circuit board (PCB) to ensure good thermal performance and voltage isolation between the module and heatsink. The second board is responsible for the SiC driving and is mounted at the top of the power PCB and consists of metal-oxide semiconductor field effect transistor (MOSFET) drivers, isolated power supplies, a current direction detection circuit, and current value sensors. In the paper, the proper function of the SiC MOSFET drivers, current direction detection, and current measurement sensors were evaluated. Finally, 3D design together with the final prototype is presented. The modules contain three bidirectional cells for interconnection three input voltage sources and one output phase. The uniqueness and novelty of the presented module are the compactness and easy expandability of the module to achieve higher power outputs and multiphase applications such as five phase machines.
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Seki, Kyoshiro, Yoshitaka Tsunekawa, Hiroshi Osada, Jun-Ichi Shida, and Koichi Murakami. "Multisensor module using magnetic semiconductor ferrite." Electronics and Communications in Japan (Part II: Electronics) 73, no. 4 (1990): 46–53. http://dx.doi.org/10.1002/ecjb.4420730406.

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Yau, Chin Horng, Wen Ren Jong, and H. H. Wang. "Design and Analysis of SCARA Substrate Transfer Robot for Semiconductor and FPD Processing Cluster Tools." Materials Science Forum 505-507 (January 2006): 331–36. http://dx.doi.org/10.4028/www.scientific.net/msf.505-507.331.

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The design criteria and dynamic analysis of SCARA substrate transfer robot for cluster tools have been investigated in this paper. The design criteria for SCARA robot to meet the application of semiconductor and flat panel display processing have been verified. The dynamic equations of decomposed modules of SCARA substrate transfer robot, such as arm module, friction module, servomotor module, harmonic drive module and belt module are formulated by Lagrange’s method respectively. Then, the dynamic equations are all built and simulated with MATLAB software. In addition, the elasticity characteristics of belt and harmonic drive are further discussed in this paper. In the aspect of control, the PID controller and force control method are both used to suppress the vibration and improve the transient response.
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Wang, Yangang, Yibo Wu, Xiaoping Dai, Steve Jones, and Guoyou Liu. "Investigation of Automotive Power Semiconductor Module Operates at Elevated Cooling Temperature." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000154–60. http://dx.doi.org/10.4071/hiten-session5-paper5_1.

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The degradation of performance and reliability of power semiconductor module with increment of temperature is an important issue to deal with in Hybrid and Electric Vehicles (HEV/EV) application. The high ambient and cooling temperatures are challenges to HEV/EV modules as the automotive industry is interested in cooling power electric system by sharing with engine's high temperature coolant. The elimination of low temperature cooling circuit has significant benefits to cost and volume/weight. However, the performance and reliability will be worsened to a large degree which may affect the feasibility of module application. In this work, an investigation is done to evaluate the electrical, thermal performance and reliability of a standard direct liquid cooled automotive IGBT module operates at 105°C coolant.
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Morgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.
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Anzai, Takeshi, Yoshinori Murakami, Shinji Sato, Hidekazu Tanisawa, Kohei Hiyama, Hiroki Takahashi, Fumiki Kato, and Hiroshi Sato. "Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices." Journal of Microelectronics and Electronic Packaging 12, no. 3 (July 1, 2015): 153–60. http://dx.doi.org/10.4071/imaps.464.

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This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.
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Xu Dan, 徐丹, 黄雪松 Huang Xuesong, 姜梦华 Jiang Menghua, 惠勇凌 Hui Yongling, 雷訇 Lei Hong, and 李强 Li Qiang. "500 W fiber-coupled semiconductor laser module." Infrared and Laser Engineering 45, no. 6 (2016): 0606003. http://dx.doi.org/10.3788/irla201645.0606003.

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Abdesselam, A., P. J. Adkin, P. P. Allport, J. Alonso, L. Andricek, F. Anghinolfi, A. A. Antonov, et al. "The ATLAS semiconductor tracker end-cap module." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 575, no. 3 (June 2007): 353–89. http://dx.doi.org/10.1016/j.nima.2007.02.019.

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El-Awady, K., C. D. Schaper, and T. Kailath. "Programmable Thermal Processing Module for Semiconductor Substrates." IEEE Transactions on Control Systems Technology 12, no. 4 (July 2004): 493–509. http://dx.doi.org/10.1109/tcst.2004.824775.

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.
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Dissertations / Theses on the topic "Semiconductor module"

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Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)." Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&amp.

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In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot &ndash
wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that 
hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.

We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced.

This work explores the optical, structural and electronic properties of this promising material whose study &ndash
samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.
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Mayne, Anna Louise. "A study of ATLAS semiconductor tracker module distortions and event cleaning with tracking." Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554383.

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The search for new physics with the ATLAS detector at the LHC requires a thorough understanding of Standard Model physics and the performance of the detector. A reliable prediction of the Standard Model backgrounds combined with precise measurements of collision events at a previously unreachable centre of mass energy {/s = 7 TeV) in ATLAS provides excellent opportunities for new physics discoveries.
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Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.

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Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.
M.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
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Filsecker, Felipe. "Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848.

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This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.
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Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.

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The knowledge about the reliability of power electronics is necessary for the design of converters. Especially for offshore applications it is essential to know, which fatigue processes happen and how the lifetime can be estimated. Numerical simulation is an important tool for the development of power electronic systems. This thesis analyse the thermal and thermal-mechanical behaviour of packages for power semiconductor devices with the help of simulations. One topic is the evaluation of different thermal models. The main focus is on the description of the thermal cross-coupling between the devices and the influence to the lifetime estimation. The power module is a well established package for power semiconductor devices. It will be explained how the heating period of power cycles influences the failure mode of this package type. Additionally, it will evaluated how SiC devices and DAB substrates influence the power cycling capability. The press-pack is in focus for high power applications as the package short-circuits during an electrical failure without external auxiliary systems. However, the knowledge about the power cycling behaviour is currently limited. With the help of simulations this behaviour will be analysed and possible weak points will be also derived. In the end of the work it will be discussed, how the lifetime can be estimated with help of FEM simulations
Für die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
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Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.

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The knowledge about the reliability of power electronics is necessary for the design of converters. Especially for offshore applications it is essential to know, which fatigue processes happen and how the lifetime can be estimated. Numerical simulation is an important tool for the development of power electronic systems. This thesis analyse the thermal and thermal-mechanical behaviour of packages for power semiconductor devices with the help of simulations. One topic is the evaluation of different thermal models. The main focus is on the description of the thermal cross-coupling between the devices and the influence to the lifetime estimation. The power module is a well established package for power semiconductor devices. It will be explained how the heating period of power cycles influences the failure mode of this package type. Additionally, it will evaluated how SiC devices and DAB substrates influence the power cycling capability. The press-pack is in focus for high power applications as the package short-circuits during an electrical failure without external auxiliary systems. However, the knowledge about the power cycling behaviour is currently limited. With the help of simulations this behaviour will be analysed and possible weak points will be also derived. In the end of the work it will be discussed, how the lifetime can be estimated with help of FEM simulations.
Für die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
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7

Janík, Daniel. "Provozní parametry LED světelných zdrojů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316394.

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The aim of the thesis is to introduce the basic photometric quantities and operating parameters of LED light sources, according to which the light sources are evaluated and compared. The thesis examines effects of high temperature and elevated stress on LED retrofits and a design of measurement methods to measure these influences. According to the proposed methods, nine samples of light sources were measured and compared to each other on a basis of the measurements. Comparison was made from the point of view of the energy as well as the quality of the produced light. The results were also compared to the parameters specified by the producers.
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Grummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.

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Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively investigated and characterized to assess its viability for high-temperature power electronics applications. The reliability and durability of TLP die-attach was extensively investigated utilizing electrical resistivity measurement as an indicator of material diffusion in gold-indium TLP samples. Criteria of ensuring diffusive stability were also developed. Samples were fabricated by material deposition on glass substrates with variant Au–In compositions but identical barrier layers. They were stressed with thermal cycling to simulate their operating conditions then characterized and compared. Excess indium content in the die-attach was shown to have poor reliability due to material diffusion through barrier layers while samples containing suitable indium content proved reliable throughout the thermal cycling process. This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au–In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo-mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module.
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
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9

Dchar, Ilyas. "Conception d’un module d’électronique de puissance «Fail-to-short» pour application haute tension." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI042/document.

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Les convertisseurs de forte puissance sont des éléments critiques des futurs réseaux HVDC. À ce titre, leur fiabilité et leur endurance sont primordiales. La défaillance d’un composant se produit soit en circuit ouvert, ou en court-circuit. Le composant défaillant en circuit ouvert est inadmissible pour les convertisseurs utilisant une topologie de mise en série. En particulier, dans certaines applications HVDC, les modules doivent être conçus de telle sorte que lorsqu'une défaillance se produit, le module défaillant doit se comporter comme un court-circuit et supporter ainsi le courant nominal qui le traverse. Un tel comportement est appelé “défaillance en court-circuit” ou “failure-to-short-circuit”. Actuellement, tous les modules de puissance ayant un mode de défaillance en court-circuit disponibles dans le commerce utilisent des semi-conducteurs en silicium. Les potentialités des semi-conducteurs en carbure de silicium (SiC) poussent, aujourd’hui, les industriels et les chercheurs à mener des investigations pour développer des modules Fail-to-short à base des puces SiC. C’est dans ce contexte que se situe ce travail de thèse, visant à concevoir un module à base de puces SiC offrant un mode de défaillance de court-circuit. Pour cela nous présentons d’abord une étude de l’énergie de défaillance des puces SiC, afin de définir les plages d’activation du mécanisme Fail-to-short. Ensuite, nous démontrons la nécessité de remplacer les interconnexions classiques (fils de bonding) par des contacts massifs sur la puce. Enfin, une mise en œuvre est présentée au travers d’un module “demi pont” à deux transistors MOSFET
The reliability and endurance of high power converters are paramount for future HVDC networks. Generally, module’s failure behavior can be classified as open-circuit failure and short-circuit failure. A module which fails to an open circuit is considered as fatal for applications requiring series connection. Especially, in some HVDC application, modules must be designed such that when a failure occurs, the failed module still able to carry the load current by the formation of a stable short circuit. Such operation is referred to as short circuit failure mode operation. Currently, all commercially available power modules which offer a short circuit failure mode use silicon semiconductors. The benefits of SiC semiconductors prompts today the manufacturers and researchers to carry out investigations to develop power modules with Fail-to-short-circuit capability based on SiC dies. This represents a real challenge to replace silicon power module for high voltage applications in the future. The work presented in this thesis aims to design a SiC power module with failure to short-circuit failure mode capability. The first challenge of the research work is to define the energy leading to the failure of the SiC dies in order to define the activation range of the Fail-to-short mechanism. Then, we demonstrate the need of replacing the conventional interconnections (wire bonds) by massive contacts. Finally, an implementation is presented through a "half bridge" module with two MOSFETs
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10

Guiheneuf, Vincent. "Approche multi-physique du vieillissement des matériaux pour application photovoltaïque." Thesis, Paris Est, 2017. http://www.theses.fr/2017PESC1091/document.

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Cette thèse explore le vieillissement des modules photovoltaïques (PV) à base de silicium cristallin via une approche multi-matériaux. L’objectif premier est de déterminer les mécanismes de dégradation mis en jeu durant l’exploitation des modules PV et ainsi d’être à même de proposer des solutions technologiques améliorant leur durabilité. Pour cela, des tests de vieillissement accéléré ont été réalisés sur le verre, la cellule PV au silicium cristallin et le mini-module PV composé du verre, d’un polymère encapsulant et de la cellule silicium.Leurs propriétés fonctionnelles sont systématiquement évaluées et le suivi dans le temps de ces indicateurs permet de définir des lois de vieillissement. En parallèle, des caractérisations physico-chimiques sont réalisées pour définir les mécanismes de dégradations des différents constituants du module. L‘étude de la chaleur humide sur le verre a permis de mettre en évidence une dégradation de surface via un processus d’hydratation du réseau vitreux et un phénomène de lixiviation du sodium qui engendre une augmentation de la transmittance du verre. La cellule PV présente des performances électriques et une réflectance dégradées suite à l’exposition aux radiations UV dues à un processus de photo-oxydation de la couche antireflet SiNx. Il a également été établit qu’une puissance UV élevée peut aussi favoriser un phénomène de régénération des performances électriques. Le vieillissement du mini-module sous UV a montré du phénomène de dégradation photo-induite (LID) engendrant une légère diminution des performances électriques dès la première exposition alors que l’impact de la chaleur humide sur les performances électriques est nul après 2000 heures d’exposition
This thesis investigates the aging of photovoltaic (PV) modules based on crystalline silicon technology via a multi-material approach. The first objective is to determine the degradation mechanisms involved during the operation of the PV modules and thus to be able to propose technological solutions improving their durability. For this purpose, accelerated aging tests were carried out on the glass, the crystalline silicon PV cell and the PV mini-module composed of glass, a polymeric encapsulant and the silicon cell.Their functional properties are systematically evaluated and the follow-up of these indicators allows to define aging laws. In parallel, physicochemical characterizations are carried out to determine the degradation mechanisms of the different components of the module. The study of damp heat on glass throws into evidence a surface degradation with a hydration process of the silica network and a leaching phenomenon of the sodium which involves an increase of the glass transmittance. The PV cell exhibits a deterioration of the electrical performance and reflectance after UV radiation exposure due to a photo-oxidation process of the SiNx antireflection layer. It has also been established that high UV power can also promote a regeneration phenomenon of electrical performances. The aging of the mini-module under UV shows the phenomenon of photo-induced degradation (LID) generating a slight decrease in the electrical performance from the first exposure whereas the impact of damp heat on the electrical performance is null after 2000 hours
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Books on the topic "Semiconductor module"

1

International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.

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Corporation, Mitsubishi Electric. Mitsubishi semiconductors: Memories module : data book. Tokyo: Mitsubishi Electric Corporation, 1992.

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Corporation, Mitsubishi Electric. Mitsubishi semiconductors 1994: Memories module (data book). Tokyo: Mitsubishi Electric Corporation, 1994.

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International, Semikron, ed. Application manual power modules. Ilmenau: ISLE, 2000.

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P, Colino Ronald, ed. Power electronic modules: Design and manufacture. Boca Raton: CRC Press, 2005.

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Baranowski, Jerzy Hubert. Sekcyjne modele ładunkowe diod i tranzystorów bipolarnych. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1985.

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Snowden, Christopher M. Semiconductor device modelling. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1988.

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Christopher, Snowden, ed. Semiconductor device modelling. London: Springer-Verlag, 1989.

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Marvin, Coughran William, ed. Semiconductors. New York: Springer-Verlag, 1994.

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The stationary semiconductor device equations. Wien: Springer-Verlag, 1986.

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Book chapters on the topic "Semiconductor module"

1

Großmann, E., U. Hilbk, and K. Peters. "Thermal Tunable Minimized Semiconductor Laser-Module." In Micro System Technologies 90, 465–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_66.

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Yagi, Atsushi. "Semiconductor Models." In Springer Monographs in Mathematics, 345–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04631-5_8.

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Strauch, Dieter. "MgO: Bulk and Shear Moduli." In Semiconductors, 45–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53620-9_11.

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Fu, Ying. "Semiconductor Materials." In Physical Models of Semiconductor Quantum Devices, 1–66. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7174-1_1.

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Chen, Li, and Michael Dreher. "Quantum Semiconductor Models." In Partial Differential Equations and Spectral Theory, 1–72. Basel: Springer Basel, 2011. http://dx.doi.org/10.1007/978-3-0348-0024-2_1.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "Kinetic Transport Models for Semiconductors." In Semiconductor Equations, 3–82. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_2.

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Sever, Michael. "Symmetric Forms of Energy — Momentum Transport Models." In Semiconductors, 365–76. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8410-6_21.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "From Kinetic to Fluid Dynamical Models." In Semiconductor Equations, 83–103. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_3.

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Su, P., and B. A. Unger. "Temperature Cycling Tests o Laser Modules." In Semiconductor Device Reliability, 363–78. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_21.

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Schenk, Andreas. "Metal-Semiconductor Contact." In Advanced Physical Models for Silicon Device Simulation, 252–80. Vienna: Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6494-5_4.

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Conference papers on the topic "Semiconductor module"

1

O'Neill, James A. "Infrared diagnostics for semiconductor process monitoring." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56649.

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Gottscho, Richard A., Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson, et al. "Light scattering methods for semiconductor process monitoring and control." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56644.

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Poulin, M., S. Ayotte, C. Latrasse, Y. Painchaud, J. F. Cliche, A. Babin, M. Aubé, et al. "Compact narrow linewidth semiconductor laser module." In SPIE Defense, Security, and Sensing, edited by Mark Dubinskii and Stephen G. Post. SPIE, 2009. http://dx.doi.org/10.1117/12.818802.

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van Os, C. F. A., and Brian N. Chapman. "In-situ monitoring of semiconductor wafer temperature using infrared interferometry." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56657.

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Viloria, Gregory, and Richard N. Savage. "Application of optical emission diagnostics and control related to semiconductor processing." In Process Module Metrology, Control and Clustering, edited by Cecil J. Davis, Irving P. Herman, and Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56652.

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Fan, Yingmin, Dandan Zhou, Hongtao Chong, Bin Zhao, Peng Wang, Ke Yuan, Chung-en Zah, and Xingsheng Liu. "VCSEL line-beam module for LiDAR applications." In Semiconductor Lasers and Applications XI, edited by Yikai Su, Werner H. Hofmann, and Wei Li. SPIE, 2021. http://dx.doi.org/10.1117/12.2601496.

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Ezzahri, Y., R. Singh, K. Fukutani, Z. Bian, A. Shakouri, G. Zeng, J. E. Bowers, J. M. Zide, and A. C. Gossard. "Transient Thermal Characterization of ErAs/In0.53Ga0.47As Thermoelectric Module." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33880.

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Abstract:
Embedded metallic nanoparticles in semiconductors have recently been proven to be of great interest for thermoelectric applications. These metallic nanoparticles play the role of scattering centers for phonons and a source of doping for electrons; they reduce simultaneously the thermal conductivity and increase the thermoelectric power factor of the semiconductor. It has also shown that metal/semiconductor heterostructures can be used to break the crystal momentum symmetry for hot electrons in thermionic devices, then increasing the number of electrons participating in transport. A thermoelectric module of 200 N-P pairs of InGaAlAs with embedded ErAs metallic nanoparticles has been fabricated. Network Identification by Deconvolution (NID) technique is then applied for transient thermal characterization of this thermoelectric module. The combination of this new representation of the dynamic behavior of the packaged device with high resolution thin film temperature measurement allows us to obtain information about heat transfer within the thermoelectric module. This is used to extract the thermal resistances and heat capacitances of the module.
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Ang, Simon S., and Hao Zhang. "High temperature power electronic module packaging." In 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153443.

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Spiessberger, S., M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, G. Erbert, and G. Trankle. "Narrow-linewidth high-power semiconductor-based laser module." In 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942619.

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Stockmeier, Manz, and Steger. "Novel high power semiconductor module for trench IGBTs." In IC's. IEEE, 2004. http://dx.doi.org/10.1109/wct.2004.240148.

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Reports on the topic "Semiconductor module"

1

Sfyrla, Anna. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker. Office of Scientific and Technical Information (OSTI), March 2008. http://dx.doi.org/10.2172/935479.

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Gardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada291809.

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Gardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada301555.

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Wright, Alan F., Normand A. Modine, Stephen R. Lee, and Stephen M. Foiles. Compact Models for Defect Diffusivity in Semiconductor Alloys. Office of Scientific and Technical Information (OSTI), September 2017. http://dx.doi.org/10.2172/1395644.

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Wang, H., H. Q. Hou, and B. E. Hammons. Anomalous normal mode oscillations in semiconductor microcavities. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/468579.

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Pinczuk, Aron, and Shalom J. Wind. Artificially Structured Semiconductors to Model Novel Quantum Phenomena. Office of Scientific and Technical Information (OSTI), January 2018. http://dx.doi.org/10.2172/1416872.

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Gardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices: Theory and Computations. Fort Belvoir, VA: Defense Technical Information Center, August 1998. http://dx.doi.org/10.21236/ada358049.

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Belenky, Gregory, and Sergey Suchalkin. Electrically Tunable Mid-Infrared Single-Mode High-Speed Semiconductor Laser. Fort Belvoir, VA: Defense Technical Information Center, November 2010. http://dx.doi.org/10.21236/ada544757.

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Wu, Z. C., Daniel A. Jelski, Thomas F. George, L. Nanai, and I. Hevesi. Model of Laser-Induced Deposition on Semiconductors from Liquid Electrolytes. Fort Belvoir, VA: Defense Technical Information Center, April 1989. http://dx.doi.org/10.21236/ada207097.

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Ruden, P. P., and Darryl L. Smith. Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel. Office of Scientific and Technical Information (OSTI), April 2007. http://dx.doi.org/10.2172/1304691.

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