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Journal articles on the topic 'Semiconductor magnetooptics'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Belyanin, A. A., V. V. Kocharovsky, and Vl V. Kocharovsky. "Superradiance phenomenon in semiconductor magnetooptics." Solid State Communications 80, no. 3 (October 1991): 243–46. http://dx.doi.org/10.1016/0038-1098(91)90190-7.

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2

Adachi, Nobuyasu, Masahiro Inoue, Iwao Mogi, and Giyuu Kido. "High Field Magnetooptics of a Diluted Magnetic Semiconductor Cd1-xCoxSe." Journal of the Physical Society of Japan 64, no. 4 (April 15, 1995): 1378–84. http://dx.doi.org/10.1143/jpsj.64.1378.

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3

Zenkova, K. Yu, A. A. Zinchenko, and B. M. Nitsovich. "Nonlinear magnetooptical absorption in a semiconductor." Physics of the Solid State 43, no. 1 (January 2001): 17–18. http://dx.doi.org/10.1134/1.1340178.

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4

Savchuk, A. I., S. Yu Paranchych, I. D. Stolyarchuk, S. V. Medynskiy, V. I. Fediv, M. D. Andriychuk, Ye O. Kandyba, A. Perrone, and P. I. Nikitin. "Magnetooptical characterization of magnetic photorefractive semiconductors." Optical Materials 18, no. 1 (October 2001): 147–49. http://dx.doi.org/10.1016/s0925-3467(01)00153-7.

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5

Bassani, F., G. C. La Rocca, and S. Rodriguez. "Inversion asymmetry and hole magnetooptics in zinc-blende semiconductors." Physical Review B 37, no. 12 (April 15, 1988): 6857–67. http://dx.doi.org/10.1103/physrevb.37.6857.

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6

Seisyan, R. P., G. M. Savchenko, and N. S. Averkiev. "Diamagnetic exciton polariton in the interband magnetooptics of semiconductors." Semiconductors 46, no. 7 (July 2012): 873–77. http://dx.doi.org/10.1134/s1063782612070184.

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7

Gaj, Jan. "Magnetooptical Studies of Bulk Diluted Magnetic Semiconductors." Acta Physica Polonica A 80, no. 2 (August 1991): 171–78. http://dx.doi.org/10.12693/aphyspola.80.171.

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8

Kratzer, Joseph H., and John Schroeder. "Magnetooptic properties of semiconductor quantum dots in glass composites." Journal of Non-Crystalline Solids 349 (December 2004): 299–308. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.209.

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9

Imamura, M., Jin-Yong Ahn, K. Takashima, and S. Inoue. "Magnetooptical properties of diluted magnetic semiconductor CdMnCoTe films." IEEE Transactions on Magnetics 38, no. 5 (September 2002): 3237–39. http://dx.doi.org/10.1109/tmag.2002.802515.

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10

Akinaga, H., M. Mizuguchi, T. Manago, E. Gan'shina, A. Granovsky, I. Rodin, A. Vinogradov, and A. Yurasov. "Enchanced magnetooptical response of magnetic nanoclusters embedded in semiconductor." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 470–72. http://dx.doi.org/10.1016/s0304-8853(01)01067-8.

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11

Buravtsova, V. E., E. A. Gan’shina, V. S. Gushchin, S. I. Kasatkin, A. M. Murav’ev, N. V. Plotnikova, and F. A. Pudonin. "Magnetic and magnetooptical properties of multilayer ferromagnet-semiconductor nanostructures." Physics of the Solid State 46, no. 5 (May 2004): 891–901. http://dx.doi.org/10.1134/1.1744968.

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12

Orlov, A. F., L. A. Balagurov, I. V. Kulemanov, N. S. Perov, E. A. Gan’shina, A. S. Semisalova, A. D. Rubacheva, V. I. Zinenko, Yu A. Agafonov, and V. V. Saraikin. "Magnetic and magnetooptical properties of ferromagnetic semiconductor GaN : Cr." Physics of the Solid State 54, no. 2 (February 2012): 283–86. http://dx.doi.org/10.1134/s1063783412020242.

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13

Kotova, L. V., A. V. Platonov, V. N. Kats, T. S. Shamirzaev, R. André, and V. P. Kochereshko. "Nonreciprocal Optical and Magnetooptical Effects in Semiconductor Quantum Wells." Physics of the Solid State 60, no. 11 (November 2018): 2269–75. http://dx.doi.org/10.1134/s1063783418110148.

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14

De Salvo, E., and R. Girlanda. "Wave Vector Dependent Magnetooptics in Semiconductors Linear and Nonlinear Interband Transitions." physica status solidi (b) 165, no. 1 (May 1, 1991): 255–68. http://dx.doi.org/10.1002/pssb.2221650122.

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15

Izuhara, T., J. Fujita, A. Levy, and R. M. Osgood. "Integration of magnetooptical waveguides onto a III-V semiconductor surface." IEEE Photonics Technology Letters 14, no. 2 (February 2002): 167–69. http://dx.doi.org/10.1109/68.980494.

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16

Savchuk, A. I., M. P. Gavaleshko, A. M. Lyakhovich, and P. I. Nikitin. "Magnetooptical effects induced by exchange interaction in diluted magnetic semiconductors." IEEE Transactions on Magnetics 29, no. 6 (November 1993): 3399–401. http://dx.doi.org/10.1109/20.280827.

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17

Kessler, F. R., R. Schulz, and B. Sievers. "Microphysical Analysis of the Magnetooptical Interband Effects of Amorphous Semiconductor Films." physica status solidi (b) 173, no. 2 (October 1, 1992): 765–73. http://dx.doi.org/10.1002/pssb.2221730230.

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18

TOROPOV, A. A., YA V. TERENT'EV, A. V. LEBEDEV, P. S. KOP'EV, S. V. IVANOV, T. KOYAMA, K. NISHIBAYASHI, A. MURAYAMA, and Y. OKA. "SPIN DYNAMICS IN III-V/II-VI: Mn HETEROVALENT QUANTUM WELLS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2739–49. http://dx.doi.org/10.1142/s0217979209062293.

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We report on the spectroscopic magnetooptical studies of spin dynamics in diluted magnetic semiconductor (DMS) GaAs / AlGaAs / ZnSe / ZnCdMnSe heterovalent double quantum wells (QW). The transients of circularly polarized photoluminescence in an external magnetic field are detected in the structures with different widths of the GaAs QW. The analysis of the data, performed within the rate-equation model, has allowed separate estimations of the spin relaxation rate of localized electrons and holes. The spin flip of the electrons confined in the DMS ZnCdMnSe QW is faster than 20 ps, whereas the spin flip of the heavy hole localized in the GaAs QW is as long as ~9 ns. The long spin flip of the holes is presumably governed by their strong 3-dimensional localization.

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19

Lamari, Saadi, and L. J. Sham. "Theory of magnetooptical properties in quantum wells of narrow-gap semiconductors." Physical Review B 38, no. 14 (November 15, 1988): 9810–18. http://dx.doi.org/10.1103/physrevb.38.9810.

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20

Zenkova, C. Yu, A. V. Derevyanchuk, V. M. Kramar, and N. K. Kramar. "Magnetooptical bistability of a layered semiconductor in the region of exciton absorption." Optics and Spectroscopy 104, no. 2 (February 2008): 213–17. http://dx.doi.org/10.1134/s0030400x08020112.

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21

Izuhara, T., J. Fujita, M. Levy, and R. M. Osgood. "Correction to "Integration of magnetooptical waveguides onto a III-V semiconductor surface"." IEEE Photonics Technology Letters 14, no. 3 (March 2002): 420. http://dx.doi.org/10.1109/lpt.2002.986833.

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22

Betzig, E. "Near-field optical microscopy/spectroscopy of discrete quantum emitters." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 1060–61. http://dx.doi.org/10.1017/s0424820100173030.

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A subwavelength sized source or detector of visible light can be raster scanned in close proximity to the surface of a sample to generate images at a resolution well beyond the classical diffractional limit. Applications of the resultant technique, near-field scanning optical microscopy (NSOM), include fluorescence imaging of fixed cells, mode profiling of semiconductor lasers, and high density magnetooptic data storage. The focus of this presentation, however, will be on the more recent use of NSOM in the identification and characterization of discrete quantum emitters from within an ensemble.Two such systems will be discussed. The first involves the detection and characterization of single fluorescent molecules. The usual difficulty with single molecule detection is not the inherently weak luminescence signal from each molecule, but rather the large background from impurity luminescence and Raman scattering within the excitation volume. NSOM greatly reduces this volume and hence the resultant background, yielding sensitivity of 0.005 molecules.

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23

Yokoi, Hideki, Tetsuya Mizumoto, Takashi Sakai, Takafumi Ohtsuka, and Yoshiaki Nakano. "Surface Micromachining in Optical Isolator with Semiconductor Guiding Layer for Enhancement of Magnetooptic Effect." Japanese Journal of Applied Physics 42, Part 1, No. 8 (August 15, 2003): 5094–97. http://dx.doi.org/10.1143/jjap.42.5094.

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24

Rey-de-Castro, R., D. Wang, A. Verevkin, A. Mycielski, and R. Sobolewski. "<tex>$hboxCd_1-xhboxMn_xhboxTe$</tex>Semimagnetic Semiconductors for Ultrafast Spintronics and Magnetooptics." IEEE Transactions On Nanotechnology 4, no. 1 (January 2005): 106–12. http://dx.doi.org/10.1109/tnano.2004.840164.

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25

La Rocca, G. C., S. Rodriguez, and F. Bassani. "Anisotropy and interference effects in magnetooptical transitions inp-type zinc-blende semiconductors." Physical Review B 38, no. 14 (November 15, 1988): 9819–29. http://dx.doi.org/10.1103/physrevb.38.9819.

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26

Hui-Chuan Hung, Chien-Jang Wu, Tzong-Jer Yang, and Shoou-Jinn Chang. "Magnetooptical Effects in Wave Properties for a Semiconductor Photonic Crystal at Near-Infrared." IEEE Photonics Journal 4, no. 3 (June 2012): 903–11. http://dx.doi.org/10.1109/jphot.2012.2200669.

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27

Ueda, Kazuhiko, Hiromasa Shimizu, and Masaaki Tanaka. "Magnetooptical Kerr Effect of Semiconductor-Based Multilayer Structures Containing a GaAs:MnAs Granular Thin Film." Japanese Journal of Applied Physics 42, Part 2, No. 8A (August 1, 2003): L914—L917. http://dx.doi.org/10.1143/jjap.42.l914.

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28

Schubert, Mathias, Tino Hofmann, and Craig M. Herzinger. "Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures." Thin Solid Films 455-456 (May 2004): 563–70. http://dx.doi.org/10.1016/j.tsf.2003.11.215.

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29

Hutchings, David C., Barry M. Holmes, Cui Zhang, Prabesh Dulal, Andrew D. Block, Sang-Yeob Sung, Nicholas C. A. Seaton, and Bethanie J. H. Stadler. "Quasi-Phase-Matched Faraday Rotation in Semiconductor Waveguides With a Magnetooptic Cladding for Monolithically Integrated Optical Isolators." IEEE Photonics Journal 5, no. 6 (December 2013): 6602512. http://dx.doi.org/10.1109/jphot.2013.2292339.

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30

Krichevtsov, B. B. "Temperature Dependence of Magnetooptic Effects in Rare-Earth Magnetic Semiconductor γ-Dy[sub 2]S[sub 3]." Physics of the Solid State 47, no. 2 (2005): 293. http://dx.doi.org/10.1134/1.1866409.

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31

Murayama, Akihiro, Kyoko Hyomi, Mio Sakuma, and Izuru Souma. "Fabrication and Magnetooptical Properties of Nanostructures of Diluted Magnetic Semiconductors Integrated with Glass Thin Films." Japanese Journal of Applied Physics 45, no. 6A (June 8, 2006): 5311–16. http://dx.doi.org/10.1143/jjap.45.5311.

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32

Suisky, D., F. Neugebauer, J. Röseler, and S. Rex. "Multiple-Band Envelope-Function Approximation for the Magnetooptical Anisotropy of Excitons in Strained Semimagnetic Semiconductors." Acta Physica Polonica A 82, no. 5 (November 1992): 861–64. http://dx.doi.org/10.12693/aphyspola.82.861.

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33

Totoki, Machiko, Tetsuya Mizumoto, Toshihiko Nakamura, Kouichi Maru, and Yoshiyuki Naito. "Direct Bonding between InP and $\bf Gd_{3}Ga_{5}O_{12}$ for Integrating Semiconductor and Magnetooptic Devices." Japanese Journal of Applied Physics 34, Part 1, No. 2A (February 15, 1995): 510–14. http://dx.doi.org/10.1143/jjap.34.510.

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34

Banshchikov, A. G., A. V. Kimel’, V. V. Pavlov, R. V. Pisarev, N. S. Sokolov, and Th Rasing. "Generation of second optical harmonic and magnetooptical Kerr effect in ferromagnet-semiconductor heterostructures CaF2/MnAs/Si(111)." Physics of the Solid State 42, no. 5 (May 2000): 909–17. http://dx.doi.org/10.1134/1.1131311.

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35

Geist, F., H. Pascher, N. Frank, G. Bauer, and M. Kriechbaum. "Coherent anti stokes Raman scattering and magnetooptical interband- transitions in superlattices of diluted magnetic IV–VI semiconductors." Superlattices and Microstructures 12, no. 4 (January 1992): 477–80. http://dx.doi.org/10.1016/0749-6036(92)90304-n.

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36

Stier, A. V., N. P. Wilson, K. A. Velizhanin, J. Kono, X. Xu, and S. A. Crooker. "Magnetooptics of Exciton Rydberg States in a Monolayer Semiconductor." Physical Review Letters 120, no. 5 (February 1, 2018). http://dx.doi.org/10.1103/physrevlett.120.057405.

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37

Hofmann, Tino, Marius Grundmann, Craig M. Herzinger, Mathias Schubert, and Wolfgang Grill. "Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures." MRS Proceedings 744 (2002). http://dx.doi.org/10.1557/proc-744-m5.32.

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ABSTRACTIn accord with the Drude model, the free-carrier contribution to the dielectric function at infrared wavelengths is proportional to the ratio of the free-carrier concentration N and the effective mass m*, and the product of the optical mobility μ and m*. Typical infrared optical experiments are therefore sensitive to the free-carrier mass, but determination of m* from the measured dielectric function requires an independent experiment, such as an electrical Hall-effect measurement, which provides either N or μ. Highly-doped zincblende III-V-semiconductors exposed to a strong external magnetic field exhibit non-symmetric magnetooptical birefringence, which is inversely proportional to m*. If the spectral dependence of the magnetooptical dielectric function tensor is known, the parameters N, m* and μ can be determined independently from optical measurements alone. Generalized ellipsometry measures three complex-valued ratios of normalized Jones matrix elements, from which the individual tensor elements of the dielectric function of arbitrarily anisotropic materials in layered samples can be reconstructed. We present the application of generalized ellipsometry to semiconductor layer structures at far-infrared wavelengths, and determine the magnetooptical dielectric function for n-GaAs and n-AlGaInP for wavelengths from 100 μm to 15 μm. We obtain the effective electron mass and mobility results of GaAs in excellent agreement with results obtained from Hall-effect and Shubnikov-de-Haas experiments. The effective electron mass in disordered n-AlGaInP obtained here is in very good agreement with previous k·p calculations. (Far)-infrared magnetooptic generalized ellipsometry may open up new avenues for non-destructive characterization of free-carrier properties in complex semiconductor heterostructures.

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38

Mizumoto, Tetsuya, and Hideki Yokoi. "Waveguide Optical Isolators Fabricated by Wafer Bonding." MRS Proceedings 834 (2004). http://dx.doi.org/10.1557/proc-834-j4.3.

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ABSTRACTWafer bonding of a magnetooptic garnet crystal to III-V compound semiconductor and LiNbO3 is discussed for the application to waveguide optical isolators. Two types of waveguide isolators, an interferometric isolator and a semileaky isolator, are discussed. The interferometric isolator uses nonreciprocal phase shift and is composed of the GaInAsP guiding layer. The isolator has the advantage of integratability with optical active devices. The semileaky isolator composed of a magnetooptic garnet guiding and LiNbO3 upper cladding layer has the advantages of large fabrication tolerance and wide operating wavelength range. The performance of isolators is also demonstrated.

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39

Tsai, Chen S., and Jun Su. "Magnetooptic Waveguide Material Structures and Devices." MRS Proceedings 597 (1999). http://dx.doi.org/10.1557/proc-597-163.

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AbstractRecent advances in the techniques for preparation of Ce-doped yttrium iron garnet (YIG) films on gadolinium gallium garnet (GGG) and semiconductor substrates, hybrid material structures of YIG/GGG- gallium arsenide (GaAs) combination, and the resulting microwave and guided-wave magnetooptic (MO) devices are presented. For example, high-efficiency MO Bragg cell modulators using the YIG/GGG-alumina material structure have been realized using a non-uniform bias magnetic field as well as an electronic feedback. Such MO modulators are being used to construct integrated optic devices such as optical scanners, switches, and frequency shifters. Also, a wideband microwave bandstop filter with a carrier frequency tuning range as high as 2.5 to 23.0 GHz using the YIG/GGG-GaAs material structure has been realized. The same material structure can be employed to perform MO Bragg diffraction experiment at ultrahigh carrier frequencies.

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40

"Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors." Key Engineering Materials 65 (January 1992): 125–32. http://dx.doi.org/10.4028/www.scientific.net/kem.65.125.

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41

Sung, Sang-Yeob, Na-Hyoung Kim, and Bethanie J. H. Stadler. "Magneto-Optic Materials for Integrated Applications." MRS Proceedings 768 (2003). http://dx.doi.org/10.1557/proc-768-g4.6.

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AbstractAll of the materials necessary for integrated isolators were grown and the application of 2D photonic crystal structures to isolators has been explored. Magnetooptical garnets were grown monolithically by reactive rf sputtering. MgO was used as a substrate because it will useful for future buffer layers and optical claddings. The chemical, structural, and optical properties of the resulting films were analyzed. In order to incorporate photonic crystal structures into the magneto-optic integration scheme, we have calculated a range of radii and spacings necessary to fabricate YIG/air structures with 2D photonic bandgaps using an advanced plane-wave expansion technique. Selfassembled alumina nanostructures have been grown with similar symmetries as those calculated, namely hexagonal close-packed pores. These nanostructures were grown onto semiconductor and oxide substrates in order to demonstrate their use as RIE masks in fabricating photonic crystals. The nanostructures can also be transferred into YIG using separate alumina masks. However, the actual structures grown in this work were smaller than those required for telecommunications due to power supply limitations. For biasing the magneto-optical elements, sputtering was used to monolithically integrate permanent SmCo magnet films using semiconductor-friendly processing. These magnets were sufficient for biasing our magneto-optical waveguides. The chemical, structural and magnetic properties of these materials, as well as total integration with SiO2 cladding layers were analyzed.

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42

Mycielski, Andrzej. "II-VI Compounds with Fe - New Family of Semimagnetic Semiconductors." MRS Proceedings 89 (1986). http://dx.doi.org/10.1557/proc-89-159.

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AbstractSeveral experimental methods: absorption, photoemission and transport measurements were used to determine the energy position of substitutional Fe2+ (3d6) donor state in the band structure of the semimagnetic semiconductor Hg1-v-xCdvFexSe for 0≤v≤0.7 and v+x=l, and x≤0.15. For v≤0.40, Fe2+(3d6) level is a resonant donor located in the conduction band. For v=O (HgSe) we obtain 230 meV for the position of Fe2+(3d6) level with respect to the bottom of the conduction band which coincides with the position of the Fermi level for electron concentration N ≅5x1018 cm-3. Surprisingly, the mobility of free electrons (T∼4.2K) is abnormally high and the Dingle temperature measured in quantum magnetoresistivity oscillations (SdH effect) and magnetooptical measurements is abnormally low. Because of the Coulomb interaction between the ionized donors, at low T, there will appear some correlation of their positions. This may lead to a kind of “liquefying” of the system of ions and to its “crystallisation” (i.e. formation of a superlattice or hyperlattice of ionized donors) at even lower T. The space-ordering of ionized donors influences dramatically the free-carrier scattering and correspondingly explains the high mobility and low Dingle temperature. Finally, we shall also present some magnetic properties of these new semimagnetic materials.

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43

Hutchings, David C., and Barry M. Holmes. "Quasi-Phase Matching Magneto-Optical Waveguides." MRS Proceedings 1291 (2011). http://dx.doi.org/10.1557/opl.2011.337.

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ABSTRACTPhotonic integration has proved remarkably successful in combining multiple optical devices onto a single chip with the benefits of added functionality, and reduction in costs, arising from the replacement of manual assembly and alignment of individual components with lithographic techniques. However, the incorporation of optical isolators and related non-reciprocal devices within standard optoelectronic wafer platforms is exceptionally challenging. Preferred magneto-optic materials cannot be exploited as waveguide core layers on semiconductor wafers due to a lower refractive index. Another difficulty is the phase velocity mismatch as a consequence of the inherent structural birefringence associated with waveguide geometries.Our approach to the integration of an optical isolator with a III-V semiconductor laser involves combining a nonreciprocal mode converter with a reciprocal mode converter, based on an asymmetric profiled rib waveguide, fabricated by Reactive Ion Etching. We demonstrate that suitably tapered waveguides can be employed to connect the mode converter to other sections thereby avoiding problems caused by mode-matching and reflections from the section interfaces.The nonreciprocal mode converter is formed from a continuation of the III-V semiconductor waveguide core with a magneto-optic upper cladding so that Faraday rotation occurs through the interaction of the evanescent tail. The phase velocity mismatch due to the waveguide birefringence is overcome using a quasi-phase-matching approach. Lithography is used to pattern the top cladding so that the film immediately on top of the waveguide core alternates between magnetooptic and a non-magneto-optic dielectric of a similar refractive index. Our first demonstrations used a dielectric (silica or silicon nitride) patterned by etching, or lift-off, on top of a GaAs rib waveguide, over which was deposited a magneto-optic film. This film was deposited by sputtering from a Ce:YIG target and demonstrated magnetic hysteresis, but, as it was not annealed, it was believed to consist of Ce:YIG and/or gamma iron oxide microcrystallites embedded in an amorphous matrix. With quasi-phase-matching periods of 110–160 μm and a waveguide length of 8 mm, we were able to demonstrate up to 12% non-reciprocal TE- to TM-mode conversion around a wavelength of 1.3 μm using the remanent magnetisation.In order to enhance the magneto-optic effect it is desirable to anneal such films. However the mismatch in thermal expansion coefficients results in a catastrophic failure of samples with large area film coverage. This problem has been shown to be alleviated by patterning the YIG film. Unfortunately wet-etching of YIG also etches (Al)GaAs and, therefore, the development of a lift-off process for YIG deposition has been undertaken. Initial results are promising with ∼100 μm×2.5 μm YIG sections deposited on a GaAs layer which remain intact after an anneal in an oxygen atmosphere.

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