Relevant bibliographies by topics / Semiconductor magnetooptics

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Semiconductor magnetooptics'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Semiconductor magnetooptics"

1

Belyanin, A. A., V. V. Kocharovsky, and Vl V. Kocharovsky. "Superradiance phenomenon in semiconductor magnetooptics." Solid State Communications 80, no. 3 (October 1991): 243–46. http://dx.doi.org/10.1016/0038-1098(91)90190-7.

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Adachi, Nobuyasu, Masahiro Inoue, Iwao Mogi, and Giyuu Kido. "High Field Magnetooptics of a Diluted Magnetic Semiconductor Cd1-xCoxSe." Journal of the Physical Society of Japan 64, no. 4 (April 15, 1995): 1378–84. http://dx.doi.org/10.1143/jpsj.64.1378.

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Zenkova, K. Yu, A. A. Zinchenko, and B. M. Nitsovich. "Nonlinear magnetooptical absorption in a semiconductor." Physics of the Solid State 43, no. 1 (January 2001): 17–18. http://dx.doi.org/10.1134/1.1340178.

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Savchuk, A. I., S. Yu Paranchych, I. D. Stolyarchuk, S. V. Medynskiy, V. I. Fediv, M. D. Andriychuk, Ye O. Kandyba, A. Perrone, and P. I. Nikitin. "Magnetooptical characterization of magnetic photorefractive semiconductors." Optical Materials 18, no. 1 (October 2001): 147–49. http://dx.doi.org/10.1016/s0925-3467(01)00153-7.

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Bassani, F., G. C. La Rocca, and S. Rodriguez. "Inversion asymmetry and hole magnetooptics in zinc-blende semiconductors." Physical Review B 37, no. 12 (April 15, 1988): 6857–67. http://dx.doi.org/10.1103/physrevb.37.6857.

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Seisyan, R. P., G. M. Savchenko, and N. S. Averkiev. "Diamagnetic exciton polariton in the interband magnetooptics of semiconductors." Semiconductors 46, no. 7 (July 2012): 873–77. http://dx.doi.org/10.1134/s1063782612070184.

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Gaj, Jan. "Magnetooptical Studies of Bulk Diluted Magnetic Semiconductors." Acta Physica Polonica A 80, no. 2 (August 1991): 171–78. http://dx.doi.org/10.12693/aphyspola.80.171.

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Kratzer, Joseph H., and John Schroeder. "Magnetooptic properties of semiconductor quantum dots in glass composites." Journal of Non-Crystalline Solids 349 (December 2004): 299–308. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.209.

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Imamura, M., Jin-Yong Ahn, K. Takashima, and S. Inoue. "Magnetooptical properties of diluted magnetic semiconductor CdMnCoTe films." IEEE Transactions on Magnetics 38, no. 5 (September 2002): 3237–39. http://dx.doi.org/10.1109/tmag.2002.802515.

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Akinaga, H., M. Mizuguchi, T. Manago, E. Gan'shina, A. Granovsky, I. Rodin, A. Vinogradov, and A. Yurasov. "Enchanced magnetooptical response of magnetic nanoclusters embedded in semiconductor." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 470–72. http://dx.doi.org/10.1016/s0304-8853(01)01067-8.

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Dissertations / Theses on the topic "Semiconductor magnetooptics"

1

Chang, Chin-chi. "Magneto-optical studies of semiconductor heterostructures." Thesis, University of Oxford, 1998. http://ora.ox.ac.uk/objects/uuid:f25fb6fb-18d9-4750-8ca2-191201c27fba.

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This thesis is primarily concerned with far infrared effects in semiconductor heterostructures. These properties have been studied as a function of magnetic fields at low temperature using various optical detection techniques. Cyclotron resonance has been studied in CdTe quantum wells. The results are compared with calculations using the memory function approach, which demonstrate that there is a large reduction in the resonant coupling due to level occupancy effects. Semimetallic GaSb/InAs superlattices have been studied by cyclotron resonance experiments. In samples with low InAs/GaSb ratios (~1), a pinning between the heavy hole subbands is predicted by theory which results in a suppression of heavy hole resonance at high magnetic fields. Photoluminescence measurements on a series of ultra-high mobility GaAs/AlGaAs heterojunctions have been performed. It has been found that the modulation caused by far infrared beam is entirely dependent on the filling factors, which is understood as the Landau level coupling effects between the subbands of 2DES. A GaAs/AlGaAs coupled quantum well photodiode has been studied by photoluminescence and photocurrent under the influence of far infrared beam. An enhancement of the photocurrent in the device is observed when the infrared photons are resonant with the intersubband transition between the anti-crossing electronic subbands of the coupled quantum wells, which makes the structure a potential tuneable far infrared detector. Most of the experimental works have been modelled with a k.p theory using momentum matrix approach. The self-consistency incorporated in this model proves to be useful while dealing with semimetallic or nonintrinsic systems. These calculations offer invaluable clues to the semiconductor heterostructures investigated.
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Nasir, F. "Electrical and optical properties of (Hg,Cd)Te accumulation layers." Thesis, University of Oxford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379839.

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Vaughan, Thomas Alexander. "Magneto-optics of InAs/GaSb heterostructures." Thesis, University of Oxford, 1995. http://ora.ox.ac.uk/objects/uuid:52b3d4c8-04f2-4ee8-b5a5-382934807722.

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The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in experimental and theoretical detail. The InAs/GaSb system is a type-II "crossed-gap" system, where the valence band edge of GaSb lies higher in energy than the conduction band edge of InAs. This leads to a region of energy above the InAs conduction band where conduction and hole states mix. Thin-layer superlattices remain semiconducting due to confinement effects, but thick-layer superlattices experience charge transfer which leads to intrinsic carrier densities approaching 1012 cm-2 per layer. Existing multi-band modeling techniques based on the k·p formalism are discussed, and a method of solving superlattice band structure (the "momentum-matrix" technique) is presented. The quantizing effects of the superlattice layers and applied magnetic fields are investigated, and the selection rules for optical transitions are derived. Standard cyclotron resonance (CR) is used to study effective masses in InAs/GaSb structures. The heavy hole mass is found to be strongly orientation-dependent, with a mass in the [111] orientation reduced 25% from the [001] mass. The electron mass is found to be roughly isotropic with respect to growth orientation, but shows variation with the InAs width due to quantum confinement effects. CR of InAs/GaSb heterojunctions display hitherto unexplained oscillations in linewidth, intensity, and effective mass. A model is proposed which explains the oscillations, based on the intrinsic nature of the InAs/GaSb system. CR is performed on an InAs/GaSb heterojunction using a free-electron laser, where due to the high intensities (on the order of MW/cm2) the absorption process saturates. This saturation allows for a determination of non-radiative relaxation lifetimes, and through the energy dependence of these lifetimes the magnetophonon effect is observed, allowing a direct measurement of LO-phonon-assisted energy relaxation rates. Coupling is introduced into the standard CR experiment, either by tilting the sample with respect to the magnetic field, or by applying a metal grating to the surface. These coupled CR experiments have striking qualitative results which allow for determination of subband separation energies and coupling matrix elements. Photoconductivity experiments are performed on thin-layer (semiconducting) superlattices, showing optical response at far-infrared wavelengths (5-20 μm). The results are compared with k·p calculations. One sample is processed for vertical transport, in which conduction occurs perpendicular to the superlattice layers. Strong optical response from this sample indicates the viability of InAs/GaSb-based far-infrared detectors. The momentum-matrix technique is used to predict optimum parameters for semiconducting superlattices with band gaps in the far-infrared. Semimetallic structures are studied via a multi-band self-consistent model, with results corroborating with and extending previous work. Intrinsic structures under applied magnetic field are modeled theoretically for the first time.
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Godoy, Marcio Peron Franco de. "Propriedades de pontos quânticos de InP/GaAs." [s.n.], 2006. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277715.

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Orientador: Fernando Iikawa
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-08-06T18:02:06Z (GMT). No. of bitstreams: 1 Godoy_MarcioPeronFrancode_D.pdf: 4057709 bytes, checksum: 0df1e56082150d4109dcf891f05d4da6 (MD5) Previous issue date: 2006
Resumo: Neste trabalho estudamos as propriedade estruturais e ópticas de pontos quânticos auto-organizados de InP crescidos sobre o substrato de GaAs. Esta estrutura apresenta o alinhamento de bandas tipo-II na interface, confinando o elétron no ponto quântico, enquanto o buraco mantém-se na barreira, próximo à interface devido à interação coulombiana atrativa. As amostras foram crescidas por epitaxia de feixe químico (CBE) no modo Stranskii-Krastanov. Os pontos quânticos apresentam raio médio de 25 nm e grande dispersão de altura (1-5 nm) e ocorre a relaxação parcial do parâmetro de rede, chegando a 2 %, em pontos quânticos superficiais. Do ponto de vista de propriedades ópticas, a fotoluminescência de pontos quânticos superficiais exibe uma eficiente emissão óptica, devido a baixa velocidade de recombinação dos estados superficiais do InP, e reflete a densidade e distribuição bimodal de tamanhos. Além disso, sua emissão óptica em função da intensidade de excitação exibe comportamento diverso em comparação com pontos quânticos cobertos com uma camada de GaAs. Em pontos quânticos cobertos, determinamos a energia de ativação térmica, que varia de 6 a 8 meV, e é associada à energia de ligação do éxciton ou energia de ionização do buraco. O decaimento temporal da luminescência de pontos quânticos é de 1,2 ns, um tempo relativamente curto para um ponto quântico tipo-II. A análise das propriedades magneto-ópticas em pontos quânticos individuais, inédita em QDs tipo-II, permitiu verificar que o fator-g do éxciton é praticamente constante, independentemente do tamanho dos QDs, devido ao fato dos buracos estarem levemente ligados. Por fim, mostramos a versatilidade do sistema acoplando-o a um poço quântico de InGaAs. Este acoplamento introduz mudanças na superposição das funções de onda do par elétron-buraco que permitem a manipulação do tempo de decaimento da luminescência e da energia de ligação excitônica
Abstract: We have investigated structural and optical properties of InP self-assembled quantum dots grown on GaAs substrate. This system presents a type-II band lineup where only electrons are confined in the InP quantum dots. The InP/GaAs quantum dots were grown by chemical beam epitaxy in the Stranskii-Krastanov mode. Our quantum dots present a mean radius of 25 nm and large height dispersion, 1-5 nm, and a partial relieve of the strain up to 2 % is observed. The photoluminescence spectra of surface quantum dots show an efficient optical emission, which is attributed to the low surface recombination velocity in InP. We observed a bimodal dispersion of the dots size distribution, giving rise to two distinct emission bands. A remarkable result is the relatively large blue shift of the emission band from uncapped samples as compared to those for capped dots. In capped quantum dots, we obtained the thermal activation energy, from 6 to 8 meV, which is associated to the exciton binding energy or hole ionization energy. The observed luminescence decay time is about 1.2 ns, relatively short decay time for type II system. We investigated magneto-optical properties using single-dot spectroscopy. The values of the exciton g factor obtained for a large number of single InP/GaAs dots are mainly constant independent of the emission energy and, therefore, of the quantum dot size. The result is attributed to the weak confinement of the holes in InP/GaAs QDs. We have also investigated structures where InP quantum dots are coupled to a InGaAs quantum well. This system permits the manipulation of the wave function overlap between electron-hole in order to control the optical emission decay time and exciton binding energy
Doutorado
Física
Doutor em Ciências
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5

Karraï, Khaled. "Etude de propriétés magnéto-optiques des hétérostructures de semiconducteurs III-V par spectroscopie submillimétrique." Grenoble 1, 1987. http://www.theses.fr/1987GRE10127.

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Interpretation des resultats experimentaux par un modele de transmission optique en presence de champ magnetique externe, developpe dans le formalisme de la fonction reponse; mise en evidence de l'absence d'interaction electron-phonon to etrange et d'une interpretation satisfaisante sans recours a l'interaction electron-phonon lo, indiquant l'importance de l'effet ecran dans la theorie de l'effet polaron resonnant. Etude de l'interaction spin-orbite induite par le champ electrique existant a l'interface; calcul des regles de selection des transitions entre niveaux de landau dans les differentes configurations magnetooptiques, differences par rapport aux semiconducteurs massifs
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Berroir, Jean-Marc. "Proprietes electroniques des superreseaux hgte-cdte." Paris 6, 1988. http://www.theses.fr/1988PA066074.

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Janda, Tomáš. "Dynamika spinové polarizace v polovodičích." Master's thesis, 2012. http://www.nusl.cz/ntk/nusl-305143.

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In this work we study ultrafast laser-induced magnetization dynamics in samples of ferromagnetic semiconductor Ga1−xMnxAs with a nominal concentration of Mn within the range of x = 0,015-0,14. To get information about magnetization movement we use magneto-optic phenomena PKE and MLD in a time-resolved pump & probe experiment. Thorough analysis of the measured magneto-optical signal allows us to disentangle contributions due to angular movement of magnetization and due to demagnetization and to reconstruct 3D motion of magnetization vector without any numerical modeling. First we explain the basis of this experimental method and we demonstrate its utilization on the measured data. After that we study angular movement of magnetization vector and its dependence on the external magnetic field, excitation intensity and Mn concentration. The pump pulse helicity dependent and independent dynamics were treated separately. In the case of demagnetization we have been able to observe not only its intensity and Mn doping dependence but also the magnetic field dependence, which has not been reported so far in the literature.
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Books on the topic "Semiconductor magnetooptics"

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Krevet, Rasmus. FIR-laser magnetooptics on Cr-based diluted magnetic semiconductors. Göttingen: Cuvillier Verlag, 1994.

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Donnerberg, Hansjörg. Atomic simulation of electrooptic and magnetooptic oxide materials. Berlin: Springer, 1999.

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Donnerberg, Hansjorg. Atomic Simulation of Electr00Ptic and Magnetooptic Oxide Materials. Springer-Verlag Telos, 1998.

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B, Carlin Donald, Connolly J. C, and Langley Research Center, eds. Linear laser diode arrays for improvement in optical disk recording. Hampton, Va: Langley Research Center, 1990.

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B, Carlin Donald, Connolly J. C, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., eds. Linear laser diode arrays for improvement in optical disk recording for space stations. [Washington, DC]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1990.

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Devreese, J. T. Theoretical Aspects and New Developments in Magneto-Optics. Springer, 2013.

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1929-, Landwehr G., and Rashba Ė I. 1927-, eds. Landau level spectroscopy. Amsterdam: North-Holland, 1991.

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Book chapters on the topic "Semiconductor magnetooptics"

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Pfeffer, P., and W. Zawadzki. "Interband Electron-Phonon Interaction in Magnetooptics of Hg1−xMnxTe." In High Magnetic Fields in Semiconductor Physics II, 522–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_80.

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Coquillat, D., J. P. Lascaray, A. Benhida, J. Deportes, A. K. Bhattacharjee, and R. Triboulet. "Magnetooptics at Γ and L Points of the Brillouin Zone and Magnetization Studies of Semimagnetic Semiconductors Cd1−xMnxTe and Zn1−xMnxTe with 0.01 < x < 0.73." In High Magnetic Fields in Semiconductor Physics II, 473–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_72.

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Lascaray, J. P. "Magnetooptic Properties of Wide Gap II1-xMnxVI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 169–90. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_7.

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Voisin, P. "Optical and Magnetooptical Absorption in Quantum Wells and Superlattices." In Heterojunctions and Semiconductor Superlattices, 73–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0_6.

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Frey, R., J. Frey, C. Meriaux, and C. Flytzanis. "Nonlinear Magnetooptics. The Photoinduced Faraday Rotation in Diluted Magnetic Semiconductors." In Guided Wave Nonlinear Optics, 75–86. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2536-9_6.

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Kutrowski, M., T. Wojtowicz, S. Kret, G. Karczewski, J. Kossut, R. Fiederling, B. König, et al. "Magnetooptical Properties of Graded Quantum Well Structures Made of Diluted Magnetic Semiconductors." In Optical Properties of Semiconductor Nanostructures, 237–46. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_25.

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Kossacki, P., D. Ferrand, A. Arnoult, J. Cibert, Y. Merle D’aubigné, A. Wasiela, S. Tatarenko, J. L. Staehli, and T. Dietl. "Magnetooptical Studies of Magnetic Ordering in Modulation Doped Quantum Well of Cd1-xMnxTe." In Optical Properties of Semiconductor Nanostructures, 225–35. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_24.

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Röthlein, P., G. Meyer, H. Pascher, and M. Tacke. "Coherent Anti-Stokes Raman Scattering and Magnetooptical Interband Transitions in Pb1−xEuxSe." In High Magnetic Fields in Semiconductor Physics II, 573–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_89.

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Kriechbaum, M., G. Bauer, E. J. Fantner, P. Pichler, H. Clemens, K. E. Ambrosch, H. Pascher, and M. v. Ortenberg. "Intra- and Interband Magnetooptical Investigations of PbTe/Pb1−xSnxTe Superlattices." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 543–46. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_120.

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Timofeev, V. B. "MAGNETOOPTICS OF 2D-ELECTRONS IN REGIME OF QUANTUM HALL EFFECT." In Lattice Dynamics and Semiconductor Physics, 428–59. WORLD SCIENTIFIC, 1989. http://dx.doi.org/10.1142/9789814368346_0020.

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Conference papers on the topic "Semiconductor magnetooptics"

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Krevet, R. "Magnetooptics on chromium-based diluted magnetic semiconductors." In 17th International Conference on Infrared and Millimeter Waves. SPIE, 2017. http://dx.doi.org/10.1117/12.2298229.

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Savchuk, A., M. Gavaleshko, and A. Lyakbovich. "Magnetooptical effects induced by exchange interaction In diluted magnetic semiconductors." In 1993 Digests of International Magnetics Conference. IEEE, 1993. http://dx.doi.org/10.1109/intmag.1993.642465.

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Zenkova, C. Yu, V. M. Kramar, N. K. Kramar, and O. V. Derevyanchuk. "Magnetooptical bistability of layer semiconductors in the field of exciton absorption." In SPIE Proceedings, edited by Malgorzata Kujawinska and Oleg V. Angelsky. SPIE, 2008. http://dx.doi.org/10.1117/12.797009.

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Tadić, M., and F. M. Peeters. "Exciton states and magnetooptical transitions in stacks of InGaAs/GaAs self-assembled quantum rings." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730158.

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Khoi Le, Van. "Electrical, Magnetic and Magnetooptical Properties of Bulk (Zn,Mn)Te Semimagnetic Semiconductor Doped with Phosphorus." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994126.

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