Journal articles: 'Semiconductor layer deposits'

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Zuo, Jialin, Sean Tavakoli, Deepakkrishna Mathavakrishnan, Taichong Ma, Matthew Lim, Brandon Rotondo, Peter Pauzauskie, Felippe Pavinatto, and Devin MacKenzie. "Additive Manufacturing of a Flexible Carbon Monoxide Sensor Based on a SnO2-Graphene Nanoink." Chemosensors 8, no. 2 (May 28, 2020): 36. http://dx.doi.org/10.3390/chemosensors8020036.

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Carbon monoxide (CO) gas is an odorless toxic combustion product that rapidly accumulates inside ordinary places, causing serious risks to human health. Hence, the quick detection of CO generation is of great interest. To meet this need, high-performance sensing units have been developed and are commercially available, with the vast majority making use of semiconductor transduction media. In this paper, we demonstrate for the first time a fabrication protocol for arrays of printed flexible CO sensors based on a printable semiconductor catalyst-decorated reduced graphene oxide sensor media. These sensors operate at room temperature with a fast response and are deposited using high-throughput printing and coating methods on thin flexible substrates. With the use of a modified solvothermal aerogel process, reduced graphene oxide (rGO) sheets were decorated with tin dioxide (SnO2) nanoscale deposits. X-ray diffraction data were used to show the composition of the material, and high-resolution X-ray photoelectron spectroscopy (XPS) characterization showed the bonding status of the sensing material. Moreover, a very uniform distribution of particles was observed in scanning (SEM) and transmission electron microscopy (TEM) images. For the fabrication of the sensors, silver (Ag) interdigitated electrodes were inkjet-printed from nanoparticle inks on plastic substrates with 100 µm linewidths and then coated with the SnO2-rGO nanocomposite by inkjet or slot-die coating, followed by a thermal treatment to further reduce the rGO. The detection of 50 ppm of CO in nitrogen was demonstrated for the devices with a slot-die coated active layer. A response of 15%, response time of 4.5 s, and recovery time of 12 s were recorded for these printed sensors, which is superior to other previously reported sensors operating at room temperature.

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Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

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Geiler, Hans D. "Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing." Materials Science Forum 573-574 (March 2008): 237–56. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.237.

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About 25years after inventing the laser annealing effects of ion implanted semiconductors a summary of the related physical phenomena is given. The field of application for short and selectively deposited energy pulses in controlled thermally activated processing is critically reviewed with the emphasis on electrical activation of implanted layers. Starting form the energy deposition and continuing to the excited transport phenomena a set of regimes can be described, which allows the classification of the variety of laser annealing methods and their different application. Within the scope of controlled thermally activated processes in nanometer dimensions old phenomena like phase transitions in strong non-equilibrium to create metastable states or producing dissipative structures by nonlinear coupling effects with self-organization are taken into account for device generations beyond 45nm. The challenges and disadvantages of laser annealing methods for planar semiconductor technology will be elaborated with respect to the current progress in laser development.

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Kutanov, Askar, Nurbek Sydyk uluu, and Zamirgul Kazakbaeva. "RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON." Interexpo GEO-Siberia 8 (2019): 52–56. http://dx.doi.org/10.33764/2618-981x-2019-8-52-56.

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Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.

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Wang, Shuhao, Junfeng Shen, Baisong Du, Kexin Xu, Zhengshuai Zhang, and Chengyu Liu. "The Relationship between Natural Pyrite and Impurity Element Semiconductor Properties: A Case Study of Vein Pyrite from the Zaozigou Gold Deposit in China." Minerals 11, no. 6 (June 1, 2021): 596. http://dx.doi.org/10.3390/min11060596.

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Pyrite is a common sulfide mineral in gold deposits, and its unique thermoelectricity has received extensive attention in the field of gold exploration. However, there is still a lack of detailed research and direct evidence about how impurity elements affect mineral semiconductor properties. In this paper, combined with first-principles calculations, laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) mapping technology and in situ Seebeck coefficient scanning probe technology were used to study the law of changing semiconductor properties in pyrite containing impurity elements such as As, Co, Ni, and Cu. The results showed that pyrite containing arsenic is a P-type semiconductor, and pyrites containing Ni, Co, Cu, and other elements are N-type semiconductors. When P-type pyrites containing As were supplemented with Ni, Cu, and other elements, the semiconductor type changed to N-type. However, Co addition did not change the semiconductor type of arsenic-rich pyrite. Pyrite formed under different temperature conditions tended to be enriched with different combinations of impurity elements, leading to the relative accumulation of P-type or N-type pyrites.

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Zhang, Chun Min, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang, and David Wei Zhang. "Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing." Materials Science Forum 815 (March 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.815.8.

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A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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Kim, Jae Yoo. "The Stability Effect of Atomic Layer Deposition (ALD) of Al₂O₃ on CH₃NH₃PbI₃ Perovskite Solar Cell Fabricated by Vapor Deposition." Key Engineering Materials 753 (August 2017): 156–62. http://dx.doi.org/10.4028/www.scientific.net/kem.753.156.

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The perovskite solar cells (PSCs) with Al2O3 passivation layer were fabricated and characterized. The PSC have some advantages of easier and cheaper fabrication process than that of conventional Si solar cells, III-V compound semiconductor solar cells, and organic solar cells. The perovskite light harvester, CH3NH3PbI3, was deposited by vapor deposition on [compact TiO2 / F-doped tin oxide (FTO) / glass]. The advantage of vapor deposition over solution process is expected to be able to offer the thin film with smoother surface over larger area. Then, Al2O3 passivation layer was deposited by atomic layer deposition (ALD) on the CH3NH3PbI3 light harvester. Al2O3 passivation layer was expected to prevent the CH3NH3PbI3 light harvester from oxidation and improve the solar cell efficiency, and ALD has been one of the most effective methods to deposit Al2O3 thin film for last 25 years. The atomic layer deposited Al2O3 layer thickness was optimized from the solar cell characterization. The optimized power conversion efficiency (PCE) and Al2O3 thickness were ~8.0 % and ~10.0 nm, respectively.

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ARIFIN, Zainal, Syamsul HADI, Suyitno SUYITNO, Aditya Rio PRABOWO, and Singgih Dwi PRASETYO. "CHARACTERIZATION OF ZnO NANOFIBER ON DOUBLE-LAYER DYE-SENSITIZED SOLAR CELLS USING DIRECT DEPOSITION METHOD." Periódico Tchê Química 17, no. 36 (December 20, 2020): 263–77. http://dx.doi.org/10.52571/ptq.v17.n36.2020.278_periodico36_pgs_263_277.pdf.

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Solar cells are capable of harvesting energy by converting solar heat into electrical energy through the photovoltaic process. A type of solar cell, namely dye-sensitized solar cells (DSSCs) which based on doublelayer photoanode is attracting researchers and engineers considering its characteristics, e.g., high efficiency, low cost, and available mass-production. The TiO2-ZnO double-layer semiconductor can be obtained from a nanofiber ZnO semiconductor which is deposited with a TiO2 nanoparticle semiconductor. In this study, the direct deposition method was applied using an electrospinning machine. The intention is to directly capture the liquid of electro-jet spun from PVA/Zn(Ac)2 solution onto fluorine-doped tin oxide (FTO) glass. The glass itself is coated with a TiO2 nanoparticle semiconductor. The investigation was addressed to obtain the best tip distance to the collector and the best flow rate in the electrospinning process. The subject environment was designated on the manufacturing process of nanofiber ZnO semiconductors used as double-layer DSSC photoanodes. Variations in flow rates of 3, 4, 5, 6, 7, and 8 μL/minute were applied in the observation. Furthermore, collaboration with the tip to collector distances using a variation of 3, 4, 5, 6, 7, and 8 cm was also considered in this study. Based on these parameters, the effects of the electrospinning process on the morphology of the directly deposited ZnO nanofiber semiconductor were obtained. The results showed that a flow rate of 4 μL/minute and a tip distance to the collector of 8 cm produced a small diameter and uniform morphology. This morphology allowed ZnO nanofibers to have better color absorption and electron excitation. Thus, it was directly proportional to the high efficiency of double-layer DSSCs. The performance value for the 4 μL/min discharge was 2.39%, and the performance value for the 8 cm needle tip distance to the collector was 1.61%.

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Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, Kengo Terai, Shuhei Sugii, Hironobu Hayashi, Naoki Aratani, Mitsuharu Suzuki, and Hiroko Yamada. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach." Materials 13, no. 10 (May 18, 2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established toward obtaining desirable thin-film morphology via this unconventional method. Herein, we evaluate a new windmill-shaped molecule with anthryl blades, 1,3,5-tris(5-(anthracen-2-yl)thiophen-2-yl)benzene, which is designed to deposit via the photoprecursor approach for use as the p-sublayer in p–i–n-type organic photovoltaic devices (OPVs). The new compound is superior to the corresponding precedent p-sublayer materials in terms of forming smooth and homogeneous films, thereby leading to improved performance of p–i–n OPVs. Overall, this work demonstrates the effectiveness of the windmill-type architecture in preparing high-quality semiconducting thin films through the photoprecursor approach.

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Fragoudakis, Roselita, Michael A. Zimmerman, and Anil Saigal. "Application of a Ag Ductile Layer in Minimizing Si Die Stresses in LDMOS Packages." Key Engineering Materials 605 (April 2014): 372–75. http://dx.doi.org/10.4028/www.scientific.net/kem.605.372.

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Lateral Diffused Metal Oxide Semiconductors (LDMOS) normally have a Cu-W flange, whose CTE is matched to Si. Low cost Cu substrate material provides 2X high thermal conductivity, and along with a AuSi eutectic solder is recommended for optimal thermal performance. However, the CTE mismatch between Cu and Si can lead to failure of the semiconductor as a result of die fracture, due to thermal stresses developed during the soldering step of the manufacturing process. Introducing a Ag ductile layer is very important in minimizing such thermal stresses and preventing catastrophic failure of the semiconductor. Ag is a ductile material electroplated on the Cu substrate to absorb stresses developed during manufacturing due to the CTE mismatch between Si and Cu. The Ag layer thickness affects the magnitude of the resulting thermal stresses. This study attempts to measure the yield strength of the Ag layer, and examines the optimal layer thickness to minimize die stresses and prevent failure. The yield stress of the ductile layer deposited on a Cu flange was measured by nanoindentation. The Oliver and Pharr method was applied to obtain modulus of elasticity and yield depth of Ag. A finite element analysis of the package was performed in order to map die stress distribution for various ductile layer thicknesses. The analysis showed that increasing the ductile layer thickness up to 0.01 - 0.02 mm, decreases the Si die stresses.

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Grigoropoulos, C. P., and W. E. Dutcher. "Moving Front Fixing in Thin Film Laser Annealing." Journal of Heat Transfer 114, no. 1 (February 1, 1992): 271–77. http://dx.doi.org/10.1115/1.2911257.

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The process of laser melting and recrystallization of thin silicon films, which are deposited on amorphous substrates, is capable of improving the semiconductor electrical and crystalline properties. The process is controlled by the intensity of the laser beam, the material translation speed, and the thermal and radiative properties of the semiconductor layer and the encapsulating structure. Accurate theoretical modeling of the associated phase change process is essential for optimal material processing. This paper presents a numerical model implementing a front-fixing approach and body-fitted curvilinear grids to analyze the heat transfer and the induced crystallization rates in thin film laser annealing. The results are compared to experimental data and reasonable agreement is obtained. Further improvements depend upon knowledge of thin film thermal and optical properties.

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Daniel, T. O., U. E. Uno, K. U. Isah, and U. Ahmadu. "Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application." Revista Mexicana de Física 67, no. 2 Mar-Apr (July 15, 2021): 263–68. http://dx.doi.org/10.31349/revmexfis.67.263.

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This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film. SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.

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Dominguez, J. E., L. Fu, and X. Q. Pan. "TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films." Microscopy and Microanalysis 7, S2 (August 2001): 1220–21. http://dx.doi.org/10.1017/s1431927600032177.

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Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.

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Жуков, Н. Д., М. И. Шишкин, and А. Г. Роках. "Плазменное отражение в мультизеренном слое узкозонных полупроводников." Письма в журнал технической физики 44, no. 8 (2018): 102. http://dx.doi.org/10.21883/pjtf.2018.08.45973.17010.

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AbstractQualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

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Rajput, Deepak, Lino Costa, Kathleen Lansford, George M. Murray, and WilliamH Hofmeister. "Laser-Assisted Deposition of Transition Metal Coatings on Graphite." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 2 (July 1, 2018): 158–66. http://dx.doi.org/10.1515/rams-2018-0060.

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Abstract This paper reports the deposition of transition metal coatings on graphite by laser melting a pre-placed layer of powder particles using a continuous wave (CW) laser. Titanium, zirconium, and niobium coatings were successfully deposited on semiconductor grade graphite plates using the laser induced surface improvement (LISI) approach. The coatings produced were characterized using scanning electron microscope, energy dispersive spectrometry, X-ray diffraction, microhardness testing, and secondary ion mass spectrometry. Results show the formation of crack-free and dense transition metal coatings and the presence of carbide phases at the coating-graphite interface.

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Sánchez Vergara, María Elena, Lorena Ramírez Vargas, Citlalli Rios, Bertha Molina, and Roberto Salcedo. "Investigation of Structural and Optoelectronic Properties of Organic Semiconductor Film Based on 8-Hydroxyquinoline Zinc." Electronics 10, no. 2 (January 8, 2021): 117. http://dx.doi.org/10.3390/electronics10020117.

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In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent density-functional theory (TDDFT) calculations. The comparison and analysis of the experimental and theoretical absorption spectra indicate that the optical bandgap of the photoactive layer is 2.4 eV. Additionally, a flexible photo device was manufactured with the active layer ZnQ2-TCNQ, and its electrical behavior was evaluated under dark and light conditions. The results show a significant change in the behavior of the device when radiation is eliminated; the layer is light sensitive. The electrical resistance in the flexible photo device is associated with the optical behavior of the materials that constitute the active layer.

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Sánchez Vergara, María Elena, Lorena Ramírez Vargas, Citlalli Rios, Bertha Molina, and Roberto Salcedo. "Investigation of Structural and Optoelectronic Properties of Organic Semiconductor Film Based on 8-Hydroxyquinoline Zinc." Electronics 10, no. 2 (January 8, 2021): 117. http://dx.doi.org/10.3390/electronics10020117.

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In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent density-functional theory (TDDFT) calculations. The comparison and analysis of the experimental and theoretical absorption spectra indicate that the optical bandgap of the photoactive layer is 2.4 eV. Additionally, a flexible photo device was manufactured with the active layer ZnQ2-TCNQ, and its electrical behavior was evaluated under dark and light conditions. The results show a significant change in the behavior of the device when radiation is eliminated; the layer is light sensitive. The electrical resistance in the flexible photo device is associated with the optical behavior of the materials that constitute the active layer.

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Agarwal, Aanchal, Wei-Yang Tien, Yu-Sheng Huang, Ragini Mishra, Chang-Wei Cheng, Shangjr Gwo, Ming-Yen Lu, and Lih-Juann Chen. "ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation." Nanomaterials 10, no. 9 (August 27, 2020): 1680. http://dx.doi.org/10.3390/nano10091680.

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ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molecular beam epitaxy (MBE). Meanwhile, a WO3 dielectric interlayer was deposited between the ZnO nanowires and Al film, via e-beam technique, to prevent the optical loss from dominating the metallic region. The metal–oxide–semiconductor (MOS) structured SPP laser, with an optimal WO3 insulating layer thickness of 3.6 nm, demonstrated an ultra-low threshold laser operation (lasing threshold of 0.79 MW cm−2). This threshold value was nearly eight times lower than that previously reported in similar ZnO/Al2O3/Al plasmonic lasers, which were ≈2.4 and ≈3 times suppressed compared to the SPP laser, with WO3 insulating layer thicknesses of 5 nm and 8 nm, respectively. Such suppression of the lasing threshold is attributed to the WO3 insulating layer, which mediated the strong confinement of the optical field in the subwavelength regime.

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Sarnet, Tiina, Timo Hatanpää, Mikko Laitinen, Timo Sajavaara, Kenichiro Mizohata, Mikko Ritala, and Markku Leskelä. "Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process." Journal of Materials Chemistry C 4, no. 3 (2016): 449–54. http://dx.doi.org/10.1039/c5tc03079j.

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Xing, Weilong, Jie Chen, Yingying Liang, Ye Zou, Yimeng Sun, Wei Xu, and Daoben Zhu. "Optimization of the thermoelectric performance of layer-by-layer structured copper-phthalocyanine (CuPc) thin films doped with hexacyano-trimethylene-cyclopropane (CN6-CP)." RSC Advances 9, no. 55 (2019): 31840–45. http://dx.doi.org/10.1039/c9ra06381a.

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Mohammed, Suzan B., Hayder J. Abdulrahman, and Ayoub A. Bazzaz. "Tuning Hybrid Nano-semiconductor-glass Via High Intensity Laser." NeuroQuantology 19, no. 7 (August 11, 2021): 35–40. http://dx.doi.org/10.14704/nq.2021.19.7.nq21081.

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Conceptually, the high intensity laser represents the simplest thin film deposition techniques that consists of both a target and a substrate holders housed in a vacuum chamber with a high powered pulsed laser as the external energy source for evaporation of target material (Semiconductor Glass). Using deposit thin laser films three ranges of frequencies were produced: (0-15,000 mJ/cm2) as a result tuning of semiconductor was satisfying condition, while the second, 0-33,000 mJ/cm2 as a result tuning of semiconductor had a stable condition and the last 0-100,000 mJ/cm2 as a result tuning of semiconductor was unstable condition. The results demonstrate a decrease in resistance due to charging the semiconductor glass by high intensity laser as well as a superior charge efficiency and lifetime of semiconductor glass coated cells compared to high intensity laser. The current increase in the charge appeared proportional with extra energy stored of the semiconductor glass coated electrodes at 2Co (>23%) in comparison with control. It is concluded that an increase in the capacity of semiconductor glass may address the main difficulty for utilizing the high intensity laser chemistry for future demands.

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Hussin, Rosniza, Xiang Hui Hou, and Kwang Leong Choy. "Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition." Defect and Diffusion Forum 329 (July 2012): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ddf.329.159.

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Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

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Peacock, Anna C., Stuart J. MacFarquhar, Yohann Franz, Antoine F. J. Runge, Sakellaris Mailis, Swe Z. Oo, Vinita Mittal, Harold M. H. Chong, and Ozan Aktas. "Laser processed semiconductors for integrated photonic devices -INVITED." EPJ Web of Conferences 238 (2020): 01001. http://dx.doi.org/10.1051/epjconf/202023801001.

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We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with other photonic or electronic layers. We demonstrate the formation of waveguides via crystallization of pre-patterned silicon components and functional microstructures through crystallization and compositional tuning of silicon-germanium alloy films. These results open a route for the fabrication of high density, multi-functional integrated optoelectronic chips.

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Banerjee, Sneha, Rajendra Dahal, and Ishwara Bhat. "Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices." MRS Advances 1, no. 50 (2016): 3379–90. http://dx.doi.org/10.1557/adv.2016.386.

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ABSTRACT Three II-VI wide bandgap compound semiconductors have been investigated for surface passivation of various photovoltaic devices. First part of this work focuses on the surface passivation of HgCdTe IR detectors using CdTe. A new metalorganic chemical vapor deposition (MOCVD) process has been developed that involves depositing CdTe films at much lower temperature (< 175°C) than the conventional processes used till now. Deposition rate as high as 420nm/h was obtained using this novel experimental setup. Favorable conformal coverage on high aspect ratio HgCdTe devices along with a significant minority carrier lifetime improvement was obtained. Another II-VI semiconductor, namely, CdS was investigated as a surface passivant for HgCdTe IR detectors. It was deposited by MOCVD as well as atomic layer deposition (ALD) and was studied for optimal conformal coverage on high aspect ratio structures. Surface passivation of p-type Si wafer has also been demonstrated using p-ZnTe grown by MOCVD, for possible application in solar cells. Preliminary work showed a remarkable improvement in the minority carrier lifetime of Si light absorbing layer after passivation with a thin layer of ZnTe.

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Sheng, Jiazhen, Dong-won Choi, Seung-Hwan Lee, Jozeph Park, and Jin-Seong Park. "Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states." Journal of Materials Chemistry C 4, no. 32 (2016): 7571–76. http://dx.doi.org/10.1039/c6tc01199c.

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Gao, Xian, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang, et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes." Advanced Materials Research 1118 (July 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.

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Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

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Yang, B., and E. Pan. "Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green’s Function Approach." Journal of Applied Mechanics 70, no. 2 (March 1, 2003): 161–68. http://dx.doi.org/10.1115/1.1544540.

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We present an efficient and accurate continuum-mechanics approach to predict the elastic fields in multilayered semiconductors due to buried quantum dots (QDs). Our approach is based on a novel Green’s function solution in anisotropic and linearly elastic multilayers, derived within the framework of generalized Stroh formalism and Fourier transforms, in conjunction with the Betti’s reciprocal theorem. By using this approach, the induced elastic fields due to QDs with general misfit strains are expressed as a volume integral over the QDs domains. For QDs with uniform misfit strains, the volume integral involved is reduced to a surface integral over the QDs boundaries. Further, for QDs that can be modeled as point sources, the induced elastic fields are then derived as a sum of the point-force Green’s functions. In the last case, the solution of the QD-induced elastic field is analytical, involving no numerical integration, except for the evaluation of the Green’s functions. As numerical examples, we have studied a multilayered semiconductor system of QDs made of alternating GaAs-spacer and InAs-wetting layers on a GaAs substrate, plus a freshly deposited InAs-wetting layer on the top. The effects of vertical and horizontal arrays of QDs and of thickness of the top wetting layer on the QD-induced elastic fields are examined and some new features are observed that may be of interest to the designers of semiconductor QD superlattices.

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Hultman, L., C. H. Choi, R. Kaspi, R. Ai, and S. A. Barnett. "Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 686–87. http://dx.doi.org/10.1017/s0424820100176563.

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III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

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Litz-Montanaro, Lisa. "The Art of Tungsten Etching in Semiconductor Chips." Microscopy Today 7, no. 2 (March 1999): 24–25. http://dx.doi.org/10.1017/s1551929500063902.

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In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semiconductor changes. While there are many tools that assist in these analytical pursuits, such as RIE (reactive ion etching - a dry etching technique), ion milling, and microcleaving, the wet chemical etching of tungsten is sometimes more reproducible than RIE techniques.

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30

Jeong, Suk Hoon, Heon Deok Seo, Boum Young Park, Jae Hong Park, Sung Min Park, Sang Chul Kim, Kee Ho Kim, and Hae Do Jeong. "Electro-Chemical Mechanical Deposition for Planarization of Cu Interconnect." Key Engineering Materials 326-328 (December 2006): 389–92. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.389.

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As copper technology moves from pilot to volume manufacturing, semiconductor fabrication is focused on methods to improve device yield. In especially semiconductor manufacturing, electrochemically deposited copper is the material of choice for advanced interconnect applications. Electrochemical deposition (ECD) employs copper plating electrolytes with organic additives to achieve bottom-up filling of small vias and trench with high aspect-ratios. However, for features with small aspect-ratios, the ECD process yields conformal layers because the additives and the bottom-up fill mechanism are not operative in such large features. So, ECD process does not achieve within-die and within-wafer planarity of the deposited copper layer. For planarization of large features and obtaining globally and locally flat films, an electro-chemical mechanical deposition (ECMD) method has been employed. ECMD process is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves simultaneous ECD roles and mechanical sweeping of the substrate surface. Copper layer deposited by the ECMD process grows preferentially in cavities on the wafer surface yielding flat profiles and much reduced overburden thickness. Preferential deposition into the cavities on the substrates surface may be achieved through two different mechanisms. The first mechanism is more mechanical in nature and it involves material removal from the top surface. The second mechanism is more chemical in nature and it involves enhancing deposition into the cavities where mechanical sweeping does not reach, and reducing deposition onto surfaces that are swept. Planar layers obtained by the ECMD technique are suitable for low stress material removal processes. Planar layers also yield improved parametric results in device structures after the material removal step. In this study, we demonstrate mechanical role of pad gives effects in ECMD process. So we evaluate gap-filling and planarization between ECMD and ECD.

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31

Vizza, Martina, Andrea Giaccherini, Walter Giurlani, Maurizio Passaponti, Nicola Cioffi, Rosaria Picca, Antonio De Luca, et al. "Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method." Metals 9, no. 2 (January 24, 2019): 122. http://dx.doi.org/10.3390/met9020122.

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This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.

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32

Kikuchi, Kenji, Shigeyuki Imura, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota, and Eiji Ohta. "Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor." MRS Proceedings 1635 (2014): 83–88. http://dx.doi.org/10.1557/opl.2014.104.

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ABSTRACTWe examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at an applied voltage of over 8 V. However, this structure had sensitivity only in the ultraviolet light region due to the much lower carrier density of the Ga2O3 layer. We therefore used a tin-doped Ga2O3 (Ga2O3:Sn) layer deposited by pulsed laser deposition (PLD) for the n-type layer to increase the carrier density. The sensitivity of the visible region was observed in the Ga2O3:Sn/CIGS hetero-junction. We also investigated the influence of the laser frequency of the PLD on the transmittance of Ga2O3:Sn and the quantum efficiency of this hetero-junction. Ga2O3:Sn film deposited at a 0.1-Hz laser repetition rate had higher transmittance than at a 10-Hz repetition rate. The Ga2O3:Sn/CIGS hetero-junction also had a higher quantum efficiency with the lower rate (50%) than with the higher rate (30%).

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Peng, W., O. Seitz, R. A. Chapman, E. M. Vogel, and Y. J. Chabal. "Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al2O3 protective layer." Applied Physics Letters 101, no. 5 (July 30, 2012): 051605. http://dx.doi.org/10.1063/1.4742168.

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34

Bian, Ji Ming, Xiao Min Li, Xiang Dong Gao, and Wei Dong Yu. "Growth and Characterization of High Quality MgO Thin Films by Ultrasonic Spray Pyrolysis." Key Engineering Materials 280-283 (February 2007): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1171.

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Ultrasonic spray pyrolysis has been applied to deposit MgO thin films on Si(100) and quartz glass substrate. The microstructures and properties of the as-grown MgO thin films were examined by X-ray diffraction, scanning electron microscopy, spectrophotometer and semiconductor resistivity meter. The results indicates that the MgO thin films deposited under optimal conditions shows smooth and dense surface without visible pores or defects over the substrate, and as well as good thickness uniformity. Almost completely (100)-oriented MgO films with the transmission higher than 90% in UV/VIS region and the resistivity at least in the order of 107Ω-cm were obtained. MgO thin film with such a crystal quality seems to be very suitable for acting as a buffer layer for the subsequent epitaxial growth of films.

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35

Huang, Jie, Hengji Zhang, Antonio Lucero, Lanxia Cheng, Santosh KC, Jian Wang, Julia Hsu, Kyeongjae Cho, and Jiyoung Kim. "Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)." Journal of Materials Chemistry C 4, no. 12 (2016): 2382–89. http://dx.doi.org/10.1039/c5tc03714j.

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Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic–inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature.

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36

Leyva Esqueda, Mariel, María Sánchez Vergara, José Álvarez Bada, and Roberto Salcedo. "CuPc: Effects of its Doping and a Study of Its Organic-Semiconducting Properties for Application in Flexible Devices." Materials 12, no. 3 (January 31, 2019): 434. http://dx.doi.org/10.3390/ma12030434.

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This study refers to the doping of organic semiconductors by a simple reaction between copper phthalocyanine and tetrathiafulvalene or tetracyanoquinodimethane. The semiconductor films of copper phthalocyanine, doped with tetrathiafulvalene donor (CuPc-TTF) and tetracyanoquinodimethane acceptor (CuPc-TCNQ) on different substrates, were prepared by vacuum evaporation. The structure and morphology of the semiconductor films were studied with infrared (IR) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The absorption spectra for CuPc-TTF, recorded in the 200–900 nm UV–vis region for the deposited films, showed two peaks: a high energy peak, around 613 nm, and a second one, around 695 nm, with both peaks corresponding to the Q-band transition of the CuPcs. From the spectra, it can also be seen that CuPc-TTF has a B-band at around 330 nm and has a bandgap of approximately 1.4 eV. The B-band in the CuPc-TCNQ spectrum is quite similar to that of CuPc-TTF; on the other hand, CuPc-TCNQ does not include a Q-band in its spectrum and its bandgap value is of approximately 1.6 eV. The experimental optical bandgaps were compared to the ones calculated through density functional theory (DFT). In order to prove the effect of dopants in the phthalocyanine semiconductor, simple devices were manufactured and their electric behaviors were evaluated. Devices constituted by the donor-acceptor active layer and by the hollow, electronic-transport selective layers, were deposited on rigid and flexible indium tin oxide (ITO) substrates by the vacuum sublimation method. The current–voltage characteristics of the investigated structures, measured in darkness and under illumination, show current density values of around 10 A/cm2 for the structure based on a mixed-PET layer and values of 3 A/cm2 for the stacked-glass layered structure. The electrical properties of the devices, such as carrier mobility (μ) were obtained from the J–V characteristics. The mobility values of the devices on glass were between 1.59 × 109 and 3.94 × 1010 cm2/(V·s), whereas the values of the devices on PET were between 1.84 × 109 and 4.51 × 109 cm2/(V·s). The different behaviors of the rigid and flexible devices is mainly due to the effect of the substrate.

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Ismail, Lyly Nyl, Saifullah Ali Harun, Habibah Zulkefle, Sukreen Hana Herman, and Mohamad Rusop Mahmood. "Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer." Advanced Materials Research 832 (November 2013): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.832.270.

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We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

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Ye, Jian Min. "Application of Wide Band Oxide Semiconductor in Bulk Heterojunction Solar Cells." Applied Mechanics and Materials 198-199 (September 2012): 64–67. http://dx.doi.org/10.4028/www.scientific.net/amm.198-199.64.

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To minimize interfacial power losses, thin layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/Al solar cells. The interfacial NiO layer is deposited by radio frequency (RF) magnetron sputtering deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 2.5% and enhances the fill factor to 56% and the open-circuit voltage (Voc) to 605 mV versus ones without NiO buffering layer control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

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Danilov, Y. A., Alexei V. Kudrin, O. V. Vikhrova, and B. N. Zvonkov. "Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition." Solid State Phenomena 168-169 (December 2010): 245–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.245.

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Laser deposition method was used for growing ferromagnetic semiconductor and half-metal compound layers. GaMnAs and InMnAs layers were grown by alternating laser ablation of solid targets (semiconductor and Mn) in hydrogen and arsine flow. The layers exhibited ferromagnetic properties (detected by Hall effect measurements) from 10 K to room temperature (for InMnAs). Half-metal compound layers were deposited by the techniques of reactive laser deposition (MnAs, MnP) and alternating laser deposition (MnSb). The half-metal layers exhibit ferromagnetism at temperatures up to 300 K.

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de Oliveira Machado, Diego Henrique, Emerson Aparecido Floriano, Luis Vicente de Andrade Scalvi, and Margarida Juri Saeki. "Investigation of Photoinduced Electrical Properties in the Heterojunction TiO₂/SnO₂." Advanced Materials Research 975 (July 2014): 201–6. http://dx.doi.org/10.4028/www.scientific.net/amr.975.201.

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TiO2/SnO2 thin films heterostructures are grown by the sol-gel-dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550°C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100°C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. Electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65eV) seems to excite the most external layer whereas a InGaN LED (2.75eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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42

Егоркин, В. И., С. В. Оболенский, В. Е. Земляков, А. А. Зайцев, and В. И. Гармаш. "Исследование ионной имплантации азота через слой нитрида кремния для межприборной изоляции силовых GaN/Si-транзисторов." Письма в журнал технической физики 47, no. 18 (2021): 15. http://dx.doi.org/10.21883/pjtf.2021.18.51465.18805.

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This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage.

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43

Grigoropoulos, C. P., W. E. Dutcher, and K. E. Barclay. "Radiative Phenomena in CW Laser Annealing." Journal of Heat Transfer 113, no. 3 (August 1, 1991): 657–62. http://dx.doi.org/10.1115/1.2910615.

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Recrystallization of thin semiconductor films can yield improved electrical and crystalline properties. Recrystallization is often effected by using a laser source to melt the semiconductor film, which has been deposited on an amorphous insulating substrate. Although temperature measurement data would be valuable for the processing of materials on a microscopic scale, very few such measurements have been presented. It is the intent of this paper to demonstrate work toward the development of completely noninvasive experimental methods for in situ quantitative analysis of the laser annealing process, based on the acquisition of surface radiative data.

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Pavlov, Michael, Mitchell Coffin, Danni Lin, and Eugene Shalyt. "Voltammetric Detection of Low Copper Concentrations in Nickel Plating Baths." International Symposium on Microelectronics 2016, no. 1 (October 1, 2016): 000050–53. http://dx.doi.org/10.4071/isom-2016-tp24.

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Abstract Nickel electroplating is widely used in semiconductor manufacturing, primarily during the packaging stage. It is not used as a final coating, but instead as a barrier layer to prevent formation of copper–tin intermetallic compounds that affect the reliability of solder joints. The nickel is deposited from baths containing nickel salt (in relatively high concentrations), boric acid, and other ions. The quality of the deposited nickel is highly dependent on the composition of the plating bath. Metallic contaminants are acceptable when their concentrations are below approximately 30 ppm. Copper, lead, zinc, and cadmium, even in relatively small quantities (higher than 30 ppm) produce a dull, black, or skip plate condition in the low-current-density areas. These metals may be removed from the plating solution by low-current-density dummy plating, but a sensitive and accurate analytical method must be used to determine when to treat the bath. Copper is considered a main contaminant due to its higher concentrations in the bath and its most detrimental effect on the nickel deposit. To prevent plating defects, the bath contaminants must be monitored.

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45

Cheng, Fei, Emanuele Verrelli, Fahad A. Alharthi, Satyajit Das, Thomas D. Anthopoulos, Khue T. Lai, Neil T. Kemp, Mary O'Neill, and Stephen M. Kelly. "Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors." RSC Advances 10, no. 43 (2020): 25540–46. http://dx.doi.org/10.1039/d0ra04445h.

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A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO₂ nanorods and zinc oxide as the semiconductor, also deposited from solution.

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Yu, H. P., H. Luo, T. T. Liu, and G. Y. Jing. "Deposit heterogeneity and the dynamics of the organic semiconductors P3HT and PCBM solution under evaporation." Modern Physics Letters B 29, no. 09 (April 10, 2015): 1550028. http://dx.doi.org/10.1142/s0217984915500281.

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The formation of organic semiconductor layer is the key procedure in the manufacture of organic photovoltaic solar cell, in which the natural evaporation of the solvent from the polymer solution plays the essential role for the conversion efficiency. Here, poly(3-hexylthiophene) ( P3HT ) and fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester ( PCBM ), as two types of semiconductor polymers, were selected as the active layer to form the deposit by drying the blend solution drops on the substrate. We explored the influences of droplet size and solute concentration on the homogeneity of the deposit. Additionally, the spatial distribution of molecular chains and grains and the instability of the droplet morphology during the drying were investigated. The results showed that the "coffee-ring" phenomenon occurred forming an annular deposit at the outermost edge and the width of the annular ring increased linearly with the concentration of the P3HT solution, until a saturation plateau is approached. On the other hand, the PCBM deposition presented a circular disk at low concentration, but displayed a sudden instability for an irregular perimeter at a critical concentration and there existed a second critical concentration above which the deposit exhibited the return of the stable circular shape. The results have an instructive impact on the performance of the device and the formation of fine structures during the process of printing, film preparation and painting.

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Elmasly, Saadeldin E. T., Luca Guerrini, Joseph Cameron, Alexander L. Kanibolotsky, Neil J. Findlay, Karen Faulds, and Peter J. Skabara. "Synergistic electrodeposition of bilayer films and analysis by Raman spectroscopy." Beilstein Journal of Organic Chemistry 14 (August 21, 2018): 2186–89. http://dx.doi.org/10.3762/bjoc.14.191.

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A novel methodology towards fabrication of multilayer organic devices, employing electrochemical polymer growth to form PEDOT and PEDTT layers, is successfully demonstrated. Moreover, careful control of the electrochemical conditions allows the degree of doping to be effectively altered for one of the polymer layers. Raman spectroscopy confirmed the formation and doped states of the PEDOT/PEDTT bilayer. The electrochemical deposition of a bilayer containing a de-doped PEDTT layer on top of doped PEDOT is analogous to a solution-processed organic semiconductor layer deposited on top of a PEDOT:PSS layer without the acidic PSS polymer. However, the poor solubility of electrochemically deposited PEDTT (or other electropolymerised potential candidates) raises the possibility of depositing a subsequent layer via solution-processing.

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Moon, Jeong Hyun, Kuan Yew Cheong, Da Il Eom, Ho Keun Song, Jeong Hyuk Yim, Jong Ho Lee, Hoon Joo Na, Wook Bahng, Nam Kyun Kim, and Hyeong Joon Kim. "Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)." Materials Science Forum 556-557 (September 2007): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.643.

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We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

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Dhingra, Mansi, Sadhna Shrivastava, P. Senthil Kumar, and S. Annapoorni. "Electrical Coupling of Organic/Inorganic Semiconductor Interfaces: A Comparative Study." Advanced Materials Research 974 (June 2014): 210–14. http://dx.doi.org/10.4028/www.scientific.net/amr.974.210.

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The present work attempts to investigate the interfacial phenomenon occurring between two dissimilar materials and in particular organic and inorganic hybrid materials. Layer by layer hybrid heterostructures are fabricated by electro-deposition technique. Here, ZnO thin films are deposited using potentiostatic mode using regulated DC voltage supply fixed at-1.0 V (with respect to the reference electrode) with platinum sheet (99.99% purity) used as the counter electrode and ITO-coated glass used as a working electrode. The as obtained ZnO films are then used as substrates for deposition of organic layer. Two conducting polymers namely polyaniline (PANI) and polypyrrole (PPy) are deposited by electro-deposition method on ZnO to form ZnO/PANI and ZnO/PPy interfaces. The two interfaces are compared for their photoconducting response. These studies are further correlated with the properties that the two interfaces share.

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SONG, WOOJIN, KYUBONG JUNG, DOO-MAN CHUN, SUNG-HOON AHN, and CAROLINE SUNYONG LEE. "DEPOSITION OF Al2O3 POWDERS USING NANO-PARTICLE DEPOSITION SYSTEM." Surface Review and Letters 17, no. 02 (April 2010): 189–93. http://dx.doi.org/10.1142/s0218625x10013710.

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In this paper, alumina film was deposited using supersonic micronozzle in nano-particle deposition System (NPDS). Powder deposition at room temperature is important in the field of film deposition since high processing temperature can be a serious limitation for the deposition on flexible substrate. Previously, many studies have been reported on particle deposition, such as aerosol deposition method (ADM) or cold spray method. However, these deposition methods cannot be applied to various types of powders. Recently, NPDS using aluminum nozzle was designed to resolve these problems but it cannot deposit precise patterns less than 1 mm. In this study, alumina particles were deposited using Silicon-based micronozzle in NPDS. Three-dimensional silicon micronozzle was fabricated using semiconductor processing method, specifically deep reactive ion etching (DRIE) method. The silicon micronozzle fabricated by Bosch process is advantageous over the conventionally used nozzle, since the hardness of silicon is higher than that of aluminum and the lifetime can be increased. In this study, alumina nano-particles were accelerated to supersonic level at the neck of micronozzle and deposited on the substrate in a low vacuum condition. The film characteristics were evaluated using field-emission scanning electronic microscope (FE-SEM) and alpha step to measure its thickness of the deposited layer. The deposition result showed that alumina powders were successfully deposited using the fabricated micronozzle by means of NPDS.

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Journal articles on the topic 'Semiconductor layer deposits'

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