Relevant bibliographies by topics / Semiconductor layer deposits

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Semiconductor layer deposits'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "Semiconductor layer deposits"

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Zuo, Jialin, Sean Tavakoli, Deepakkrishna Mathavakrishnan, et al. "Additive Manufacturing of a Flexible Carbon Monoxide Sensor Based on a SnO2-Graphene Nanoink." Chemosensors 8, no. 2 (2020): 36. http://dx.doi.org/10.3390/chemosensors8020036.

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Carbon monoxide (CO) gas is an odorless toxic combustion product that rapidly accumulates inside ordinary places, causing serious risks to human health. Hence, the quick detection of CO generation is of great interest. To meet this need, high-performance sensing units have been developed and are commercially available, with the vast majority making use of semiconductor transduction media. In this paper, we demonstrate for the first time a fabrication protocol for arrays of printed flexible CO sensors based on a printable semiconductor catalyst-decorated reduced graphene oxide sensor media. The
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Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputter
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Geiler, Hans D. "Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing." Materials Science Forum 573-574 (March 2008): 237–56. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.237.

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About 25years after inventing the laser annealing effects of ion implanted semiconductors a summary of the related physical phenomena is given. The field of application for short and selectively deposited energy pulses in controlled thermally activated processing is critically reviewed with the emphasis on electrical activation of implanted layers. Starting form the energy deposition and continuing to the excited transport phenomena a set of regimes can be described, which allows the classification of the variety of laser annealing methods and their different application. Within the scope of c
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Kutanov, Askar, Nurbek Sydyk uluu, and Zamirgul Kazakbaeva. "RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON." Interexpo GEO-Siberia 8 (2019): 52–56. http://dx.doi.org/10.33764/2618-981x-2019-8-52-56.

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Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.
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Wang, Shuhao, Junfeng Shen, Baisong Du, Kexin Xu, Zhengshuai Zhang, and Chengyu Liu. "The Relationship between Natural Pyrite and Impurity Element Semiconductor Properties: A Case Study of Vein Pyrite from the Zaozigou Gold Deposit in China." Minerals 11, no. 6 (2021): 596. http://dx.doi.org/10.3390/min11060596.

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Pyrite is a common sulfide mineral in gold deposits, and its unique thermoelectricity has received extensive attention in the field of gold exploration. However, there is still a lack of detailed research and direct evidence about how impurity elements affect mineral semiconductor properties. In this paper, combined with first-principles calculations, laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) mapping technology and in situ Seebeck coefficient scanning probe technology were used to study the law of changing semiconductor properties in pyrite containing impurity ele
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Zhang, Chun Min, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang, and David Wei Zhang. "Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing." Materials Science Forum 815 (March 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.815.8.

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A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.
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Kim, Jae Yoo. "The Stability Effect of Atomic Layer Deposition (ALD) of Al2O3 on CH3NH3PbI3 Perovskite Solar Cell Fabricated by Vapor Deposition." Key Engineering Materials 753 (August 2017): 156–62. http://dx.doi.org/10.4028/www.scientific.net/kem.753.156.

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The perovskite solar cells (PSCs) with Al2O3 passivation layer were fabricated and characterized. The PSC have some advantages of easier and cheaper fabrication process than that of conventional Si solar cells, III-V compound semiconductor solar cells, and organic solar cells. The perovskite light harvester, CH3NH3PbI3, was deposited by vapor deposition on [compact TiO2 / F-doped tin oxide (FTO) / glass]. The advantage of vapor deposition over solution process is expected to be able to offer the thin film with smoother surface over larger area. Then, Al2O3 passivation layer was deposited by at
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ARIFIN, Zainal, Syamsul HADI, Suyitno SUYITNO, Aditya Rio PRABOWO, and Singgih Dwi PRASETYO. "CHARACTERIZATION OF ZnO NANOFIBER ON DOUBLE-LAYER DYE-SENSITIZED SOLAR CELLS USING DIRECT DEPOSITION METHOD." Periódico Tchê Química 17, no. 36 (2020): 263–77. http://dx.doi.org/10.52571/ptq.v17.n36.2020.278_periodico36_pgs_263_277.pdf.

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Solar cells are capable of harvesting energy by converting solar heat into electrical energy through the photovoltaic process. A type of solar cell, namely dye-sensitized solar cells (DSSCs) which based on doublelayer photoanode is attracting researchers and engineers considering its characteristics, e.g., high efficiency, low cost, and available mass-production. The TiO2-ZnO double-layer semiconductor can be obtained from a nanofiber ZnO semiconductor which is deposited with a TiO2 nanoparticle semiconductor. In this study, the direct deposition method was applied using an electrospinning mac
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Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, et al. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach." Materials 13, no. 10 (2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established t
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Fragoudakis, Roselita, Michael A. Zimmerman, and Anil Saigal. "Application of a Ag Ductile Layer in Minimizing Si Die Stresses in LDMOS Packages." Key Engineering Materials 605 (April 2014): 372–75. http://dx.doi.org/10.4028/www.scientific.net/kem.605.372.

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Lateral Diffused Metal Oxide Semiconductors (LDMOS) normally have a Cu-W flange, whose CTE is matched to Si. Low cost Cu substrate material provides 2X high thermal conductivity, and along with a AuSi eutectic solder is recommended for optimal thermal performance. However, the CTE mismatch between Cu and Si can lead to failure of the semiconductor as a result of die fracture, due to thermal stresses developed during the soldering step of the manufacturing process. Introducing a Ag ductile layer is very important in minimizing such thermal stresses and preventing catastrophic failure of the sem
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Dissertations / Theses on the topic "Semiconductor layer deposits"

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Hetherington, C. "Transmission electron microscopy of GaAs/AlGaAs multilayers." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379967.

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Egede, Eforma Justin. "P-type Doping of Pulsed Laser Deposited WS2 with Nb." Thesis, University of North Texas, 2017. https://digital.library.unt.edu/ark:/67531/metadc1062806/.

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Layered transition metal dichalcogenides (TMDs) are potentially ideal semiconducting materials due to their in-plane carrier transport and tunable bandgaps, which are favorable properties for electrical and optoelectronic applications. However, the ability to make p-n junctions is the foundation of semiconductor devices, and therefore the ability to achieve reproducible p- and n-type doping in TMD semiconducting materials is critical. In this work, p-type substitutional doping of pulsed laser deposited WS2 films with niobium is reported. The synthesis technique of the PLD target with dopant in
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Mandre, Shyam K. "Controlling the emission properties of high power semiconductor lasers stabilization by optical feedback and coherence control." Berlin Logos-Verl, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=2833481&prov=M&dok_var=1&dok_ext=htm.

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Shahrjerdi, Davood 1980. "III-V channel MOS devices with atomic-layer-deposited high-k gate dielectrics : interface and carrier transport studies." 2008. http://hdl.handle.net/2152/18264.

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The performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been historically achieved through shrinking the gate length of transistors for over four decades. Addressing the current challenges with CMOS scaling, the 2005 edition of International Technology Roadmap for Semiconductors has predicted the need for so-called technology boosters involving new materials for the gate dielectric and the channel as well as innovative structures. Theoretical studies suggest that the incorporation of high-mobility channel materials such as germanium and III-Vs could outperfo
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Kuo, Chien-hung, and 郭建宏. "Fabrication of chemical vapor deposited SiC film and its metal-insulation layer-semiconductor device." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/59759455389588160125.

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碩士<br>國立高雄大學<br>電機工程學系碩士班<br>101<br>In the thesis, the SiC films deposited on Si substrate prepared by chemical vapor deposition method were studied. The SiCl4 and CH4 sources were used as the precursors in the deposition process. Film deposition rate and morphology were studied. Under certain conditions, the deposition rate around 2.8 nm/s can be achieved. With film thickness increasing, smoother surface can be observed with surface roughness less than 10 - 20 nm。 With following device process, the Au-SiC-Si device was fabricated. The electrical properties were investigated. With the deposite
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Chang, Chu-Jen, and 張居仁. "Photo-Response of Metal-Oxide-Semiconductor Capacitance with Atomic Layer Deposited High-K Dielectric as Gate Insulator." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/04069515428761367866.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>99<br>In this thesis, metal-oxide-semiconductor capacitors (MOSC) with high-k dielectric HfO2 deposited by atomic layer deposition (ALD) were fabricated, and indium tin oxide (ITO) prepared by sputtering was used as the gate metal material. By taking advantage of the transparent and conductive characteristics of the indium tin oxide, the MOSC was shined with visible light and its capacitance-voltage (C-V) characteristic was measured before and after illumination. Photo-response of the MOSC subjected to high-energy -ray irradiation was also carried out in this work
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Lin, Li-Chien, and 林立騫. "Investigations of Aluminum oxide/Germanium Metal-Oxide-Semiconductor Devices Deposited by Atomic Layer Deposition at Different Temperatures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/3ye53j.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>104<br>In this thesis, the 7 nm of Aluminum oxide Al2O3 was deposited on n-type Germanium wafer at 150℃, 200℃, and 250℃. Then 80 nm of Ni was deposited on Al2O3 as top electrode and 150 nm of Au-Sb is deposited on backside of Germanium wafer by thermal evaporator. Form a Metal-Oxide-Semiconductor device with structure of Ni/Al2O3/n-Germanium/AuSb. The as-deposited samples at different temperatures are noted as Td150, Td200, and Td250.The samples with post-deposition annealing treatment are noted as PDA-Td150, PDA-Td200, and PDA-Td250. In electronic analysis, the h
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Shun-KaiYang and 楊舜凱. "AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/m3be56.

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碩士<br>國立成功大學<br>奈米積體電路工程碩士學位學程<br>107<br>AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be a dominant candidate for post-Si next generation power applications due to their impressive performance, such as high saturation electron velocity, high breakdown electric field and high carrier density. In this work, gate field plate is used to increase the device’s breakdown voltage. In order to reduce gate leakage current, ALD deposited HfAlO is used as gate dielectric. In addition, nitrogen plasma is used to improve the surface quality of the sample. In this work, the AlGaN/Ga
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Tsou, Ping-Han, and 鄒秉翰. "Study on Electrical and Chemical Characteristics of Indium Gallium Arsenide Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Al2O3 Gate Dielectric." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/83430312867733492767.

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碩士<br>國立交通大學<br>電子工程學系 電子研究所<br>101<br>In the beginning of the thesis, we have mainly studied the interface between (100)-oriented In0.53Ga0.47As channel layer and Al2O3 (atomic layer deposition, ALD). Poor interface and oxide qualities may cause high frequency dispersion, Fermi level pinning, and high gate leakage current. In order to improve interface and gate oxide qualities, different thermal treatments are applied to the capacitors, such as post-metallization annealing (PMA), forming gas annealing (FGA), and post deposition annealing (PDA). Firstly, we study the difference between the cap
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Chen, Min-Hao, and 陳旻浩. "High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited oxide and metal gate stacks." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/v44mrk.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>105<br>GaAs-based III-V compound semiconductors are one of the most promising channel material to extend Moore’s law beyond the limits of Si because of their high electron mobility. Owing to higher electron mobility and higher saturation velocity than Si, lots of efforts have been driven in perfecting the structure of High-κ/Metal-Gate on III-V material to achieve high performance and low power dissipation metal-oxide-semiconductor field-effect-transistors (MOSFETs). Therefore, the interface between III-V semiconductor and high-κ dielectric is the key issue to be so
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Book chapters on the topic "Semiconductor layer deposits"

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Apanasevich, S. P., F. V. Karpushko, and G. V. Sinitsyn. "Optical Bistability in Vacuum-Deposited Semiconductor Fabry-Perot Interferometers." In Laser Optics of Condensed Matter. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4615-7341-8_59.

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Calabretta, Michele, Alessandro Sitta, Salvatore Massimo Oliveri, and Gaetano Sequenzia. "Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device." In Lecture Notes in Mechanical Engineering. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70566-4_10.

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AbstractElectrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional compound such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (~20 µm) copper layer. Warpage has been experimental characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. A linear Finite Element Model (FEM) has been developed to predict the geometrically stress-curvature relation, comparing results with analytical models.
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Ye, Peide D., Yi Xuan, Yanqing Wu, and Min Xu. "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model." In Fundamentals of III-V Semiconductor MOSFETs. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_7.

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Venkatesan, T., S. Bhattacharya, C. Doughty, et al. "Pulsed Laser Deposited Metal-Oxide Based Superconductor, Semiconductor and Dielectric Heterostructures and Superlattices." In Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1727-2_13.

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Robinson Azariah John Chelliah, Cyril, and Rajesh Swaminathan. "Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition." In Practical Applications of Laser Ablation. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96161.

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The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.
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"Photoluminescence study of ZnO thin films deposited by pulsed laser ablation." In Compound Semiconductors 2004. CRC Press, 2005. http://dx.doi.org/10.1201/9781482269222-95.

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"Effect of annealing on the optical parameters in pulsed laser deposited vanadium pentoxide thin films." In Compound Semiconductors 2001. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-87.

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Linnik, Oksana, Nataliia Chorna, Nataliia Smirnova, et al. "Pulsed Laser-Deposited TiO2-based Films: Synthesis, Electronic Structure and Photocatalytic Activity." In Semiconductor Photocatalysis - Materials, Mechanisms and Applications. InTech, 2016. http://dx.doi.org/10.5772/62637.

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Wasserman, A., R. Beserman, and K. Dettmer. "Thickness measurements of Si1−xGex thin layers deposited on Si mesa structures." In Selected Topics in Group IV and II–VI Semiconductors. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50027-9.

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Draissia, Mohamed, and Mohamed Y. Debili. "Mechanical properties of metastable r.f magnetron sputter-deposited Al1-xCux thin films." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50073-1.

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Conference papers on the topic "Semiconductor layer deposits"

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Smith, S. W., K. G. McAuliffe, and J. F. Conley. "Atomic layer deposited Al2O3/Ta2O5 nanolaminate capacitors." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378151.

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Garduno, S. I., M. Estrada, I. Hernandez, et al. "Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2." In 2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC). IEEE, 2015. http://dx.doi.org/10.1109/ropec.2015.7395135.

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Yoshitugu, Koji, Masahiro Horita, Mustunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka. "High pressures water vapor annealing for atomic-layer-deposited Al2O3 on GaN." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528842.

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Ertley, C. D., O. H. W. Siegmund, T. Cremer, et al. "Developments in atomic layer deposited microchannel plates." In 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD). IEEE, 2016. http://dx.doi.org/10.1109/nssmic.2016.8069880.

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Minkov, I. P., S. Simeonov, A. Szekeres, et al. "Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films." In 2014 International Semiconductor Conference (CAS). IEEE, 2014. http://dx.doi.org/10.1109/smicnd.2014.6966404.

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Simeonov, S., I. Minkov, A. Szekeres, et al. "Trap space charge limited current in pulsed laser deposited AlN:Cr films." In 2009 International Semiconductor Conference (CAS 2009). IEEE, 2009. http://dx.doi.org/10.1109/smicnd.2009.5336703.

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Simeonov, S., S. Bakalova, E. Kafedjiiska, et al. "Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures." In 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.283992.

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Yanqing Wu, Shurui Wang, Yi Xuan, Tian Shen, Peide D. Ye, and James A. Cooper. "Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422377.

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Kalkofen, Bodo, Mindaugas Silinskas, Marco Lisker, Y. S. Kim, and Edmund P. Burte. "Atomic layer deposited solid sources for doping of high aspect ratio semiconductor structures." In 2018 18th International Workshop on Junction Technology (IWJT). IEEE, 2018. http://dx.doi.org/10.1109/iwjt.2018.8330296.

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Das, Anindita, Sanatan Chattopadhyay, Goutam K. Dalapati, Dongzhi Chi, and M. K. Kumar. "Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.924341.

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