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Relevant bibliographies by topics / Semiconductor equations

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Academic literature on the topic 'Semiconductor equations'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Semiconductor equations"

1

Buot, F. A. "Generalized Semiconductor Bloch Equations." Journal of Computational and Theoretical Nanoscience 1, no. 2 (September 1, 2004): 144–68. http://dx.doi.org/10.1166/jctn.2004.012.

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Pospíšek, Miroslav. "Nonlinear boundary value problems with application to semiconductor device equations." Applications of Mathematics 39, no. 4 (1994): 241–58. http://dx.doi.org/10.21136/am.1994.134255.

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TALANINA, I. B. "EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS." Journal of Nonlinear Optical Physics & Materials 05, no. 01 (January 1996): 51–57. http://dx.doi.org/10.1142/s0218863596000064.

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The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.

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Dorey, A. P. "Rate Equations in Semiconductor Electronics." Electronics and Power 32, no. 9 (1986): 680. http://dx.doi.org/10.1049/ep.1986.0400.

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Sever, Michael, and Peter A. Markowich. "The Stationary Semiconductor Device Equations." Mathematics of Computation 49, no. 179 (July 1987): 306. http://dx.doi.org/10.2307/2008270.

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Markowich, P. A. "The stationary semiconductor device equations." Microelectronics Journal 26, no. 2-3 (March 1995): xxv—xxvi. http://dx.doi.org/10.1016/0026-2692(95)90018-7.

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Pospíšek, Miroslav. "Convergent algorithms suitable for the solution of the semiconductor device equations." Applications of Mathematics 40, no. 2 (1995): 107–30. http://dx.doi.org/10.21136/am.1995.134283.

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Nikonov, D. E., and G. I. Bourianoff. "Spin Gain Transistor in Ferromagnetic Semiconductors—The Semiconductor Bloch-Equations Approach." IEEE Transactions On Nanotechnology 4, no. 2 (March 2005): 206–14. http://dx.doi.org/10.1109/tnano.2004.837847.

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Combescot, M., O. Betbeder-Matibet, and M. N. Leuenberger. "Analytical approach to semiconductor Bloch equations." EPL (Europhysics Letters) 88, no. 5 (December 1, 2009): 57007. http://dx.doi.org/10.1209/0295-5075/88/57007.

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Frehse, J., and J. Naumann. "Stationary Semiconductor Equations Modeling Avalanche Generation." Journal of Mathematical Analysis and Applications 198, no. 3 (March 1996): 685–702. http://dx.doi.org/10.1006/jmaa.1996.0108.

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Dissertations / Theses on the topic "Semiconductor equations"

1

Murdoch, Thomas. "Galerkin methods for nonlinear elliptic equations." Thesis, University of Oxford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329932.

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Ferguson, R. C. "Numerical techniques for the drift-diffusion semiconductor equations." Thesis, University of Bath, 1996. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362239.

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Law, Clement K. "Semiconductor Laser Device-Level Characteristics." DigitalCommons@CalPoly, 2011. https://digitalcommons.calpoly.edu/theses/493.

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High-speed modulations of the semiconductor lasers are highly desirable in cost-effective optical communication systems. Developing the experimental setups to extract the characteristics of the semiconductor lasers is vital to the future of the optical research projects. In this thesis, integrated experimental setup designs have been developed to measure the characteristics of the Vertical Cavity Surface Emitting Laser (VCSEL), Distributed Feedback (DFB), and Fabry-Pérot (FP) lasers. The measurements of the DC characteristics are optical power versus drive current (L-I) curves (DFB, VCSEL) and optical spectra (FP, DFB, VCSEL). In addition, the high-speed optical detection measurement of the optoelectronic frequency responses for VCSEL and FP lasers, and relative intensity noise (RIN) for DFB and FP lasers have also been measured. Finally, the measurement of the frequency response of the optical pumping with 850nm VCSEL has been attempted.

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Besse, Pierre-André. "Modal reflectivities and new derivation of the basic equations for semiconductor optical amplifiers /." Zürich : ETH, 1992. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=9608.

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Hader, J., I. Kilen, S. W. Koch, and J. V. Moloney. "Non-equilibrium effects in VECSELs." SPIE-INT SOC OPTICAL ENGINEERING, 2017. http://hdl.handle.net/10150/625513.

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A systematic study of microscopic many-body dynamics is used to analyze a strategy for how to generate ultrashort mode locked pulses in the vertical external-cavity surface-emitting lasers with a saturable absorber mirror. The field propagation is simulated using Maxwell's equations and is coupled to the polarization from the quantum wells using the semiconductor Bloch equations. Simulations on the level of second Born-Markov are used to fit coefficients for microscopic higher order correlation effects such as dephasing of the polarization, carrier-carrier scattering and carrier relaxation. We numerically examine recent published experimental results on mode locked pulses, as well as the self phase modulation in the gain chip and SESAM.

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Dalton, Karen Sonya Helen. "Pulsed field studies of magnetotransport in semiconductor heterostructures." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325936.

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Kilen, Isak Ragnvald, and Isak Ragnvald Kilen. "Non-Equilibrium Many-Body Influence on Mode-Locked Vertical External-Cavity Surface-Emitting Lasers." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626375.

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Vertical external-cavity surface-emitting lasers are ideal testbeds for studying the influence of the non-equilibrium many-body dynamics on mode locking. As we will show in this thesis, ultra short pulse generation involves a marked departure from Fermi carrier distributions assumed in prior theoretical studies. A quantitative model of the mode locking dynamics is presented, where the semiconductor Bloch equations with Maxwell’s equation are coupled, in order to study the influences of quantum well carrier scattering on mode locking dynamics. This is the first work where the full model is solved without adiabatically eliminating the microscopic polarizations. In many instances we find that higher order correlation contributions (e.g. polarization dephasing, carrier scattering, and screening) can be represented by rate models, with the effective rates extracted at the level of second Born-Markov approximations. In other circumstances, such as continuous wave multi-wavelength lasing, we are forced to fully include these higher correlation terms. In this thesis we identify the key contributors that control mode locking dynamics, the stability of single pulse mode-locking, and the influence of higher order correlation in sustaining multi-wavelength continuous wave operation.

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Podzimski, Reinold Ephraim [Verfasser]. "Shift currents in bulk GaAs and GaAs quantum wells analyzed by a combined approach of k.p perturbation theory and the semiconductor Bloch equations / Reinold Ephraim Podzimski." Paderborn : Universitätsbibliothek, 2016. http://d-nb.info/1123126739/34.

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Moussa, Jonathan Edward. "The Schroedinger-Poisson selfconsistency in layered quantum semiconductor structures." Link to electronic thesis, 2003. http://www.wpi.edu/Pubs/ETD/Available/etd-1124103-230904/.

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Penny, Melissa. "Mathematical modelling of dye-sensitised solar cells." Queensland University of Technology, 2006. http://eprints.qut.edu.au/16270/.

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This thesis presents a mathematical model of the nanoporous anode within a dyesensitised solar cell (DSC). The main purpose of this work is to investigate interfacial charge transfer and charge transport within the porous anode of the DSC under both illuminated and non-illuminated conditions. Within the porous anode we consider many of the charge transfer reactions associated with the electrolyte species, adsorbed dye molecules and semiconductor electrons at the semiconductor-dye- electrolyte interface. Each reaction at this interface is modelled explicitly via an electrochemical equation, resulting in an interfacial model that consists of a coupled system of non-linear algebraic equations. We develop a general model framework for charge transfer at the semiconductor-dye-electrolyte interface and simplify this framework to produce a model based on the available interfacial kinetic data. We account for the charge transport mechanisms within the porous semiconductor and the electrolyte filled pores that constitute the anode of the DSC, through a one- dimensional model developed under steady-state conditions. The governing transport equations account for the diffusion and migration of charge species within the porous anode. The transport model consists of a coupled system of non-linear differential equations, and is coupled to the interfacial model via reaction terms within the mass-flux balance equations. An equivalent circuit model is developed to account for those components of the DSC not explicitly included in the mathematical model of the anode. To obtain solutions for our DSC mathematical model we develop code in FORTRAN for the numerical simulation of the governing equations. We additionally employ regular perturbation analysis to obtain analytic approximations to the solutions of the interfacial charge transfer model. These approximations facilitate a reduction in computation time for the coupled mathematical model with no significant loss of accuracy. To obtain predictions of the current generated by the cell we source kinetic and transport parameter values from the literature and from experimental measurements associated with the DSC commissioned for this study. The model solutions we obtain with these values correspond very favourably with experimental data measured from standard DSC configurations consisting of titanium dioxide porous films with iodide/triiodide redox couples within the electrolyte. The mathematical model within this thesis enables thorough investigation of the interfacial reactions and charge transport within the DSC.We investigate the effects of modified cell configurations on the efficiency of the cell by varying associated parameter values in our model. We find, given our model and the DSC configuration investigated, that the efficiency of the DSC is improved with increasing electron diffusion, decreasing internal resistances and with decreasing dark current. We conclude that transport within the electrolyte, as described by the model, appears to have no limiting effect on the current predicted by the model until large positive voltages. Additionally, we observe that the ultrafast injection from the excited dye molecules limits the interfacial reactions that affect the DSC current.

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Books on the topic "Semiconductor equations"

1

Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. Semiconductor Equations. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2.

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1957-, Ringhofer C. A., and Schmeiser C. 1958-, eds. Semiconductor equations. Wien: Springer-Verlag, 1990.

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Jüngel, Ansgar. Quasi-hydrodynamic Semiconductor Equations. Basel: Birkhäuser Basel, 2001. http://dx.doi.org/10.1007/978-3-0348-8334-4.

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4

Rate equations in semiconductor electronics. Cambridge [Cambridgeshire]: Cambridge University Press, 1985.

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Markowich, Peter A. The Stationary Semiconductor Device Equations. Vienna: Springer Vienna, 1986.

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6

Markowich, Peter A. The stationary semiconductor device equations. Wien: Springer-Verlag, 1986.

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The stationary semiconductor device equations. Wien: Springer-Verlag, 1986.

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Markowich, Peter A. The Stationary Semiconductor Device Equations. Vienna: Springer Vienna, 1986. http://dx.doi.org/10.1007/978-3-7091-3678-2.

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Hagley, William Andre. Self-consistent solution of Schrödinger's and Poisson's equations for arbitrary semiconductor heterostructures. Ottawa: National Library of Canada, 1993.

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10

Transport equations for semiconductors. Berlin: Springer, 2009.

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Book chapters on the topic "Semiconductor equations"

1

Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "Introduction." In Semiconductor Equations, 1–2. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_1.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "Kinetic Transport Models for Semiconductors." In Semiconductor Equations, 3–82. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_2.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "From Kinetic to Fluid Dynamical Models." In Semiconductor Equations, 83–103. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_3.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "The Drift Diffusion Equations." In Semiconductor Equations, 104–74. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_4.

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Markowich, Peter A., Christian A. Ringhofer, and Christian Schmeiser. "Devices." In Semiconductor Equations, 175–244. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_5.

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v. Baltz, R. "Semiconductor Bloch Equations." In Semiconductor Optics, 771–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-38347-5_27.

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Böer, Karl W., and Udo W. Pohl. "Carrier-Transport Equations." In Semiconductor Physics, 847–95. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69150-3_22.

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Böer, Karl W., and Udo W. Pohl. "Carrier-Transport Equations." In Semiconductor Physics, 1–49. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-06540-3_22-1.

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Böer, Karl W., and Udo W. Pohl. "Carrier-Transport Equations." In Semiconductor Physics, 1–49. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_22-2.

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Böer, Karl W., and Udo W. Pohl. "Carrier-Transport Equations." In Semiconductor Physics, 1–49. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-06540-3_22-3.

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Conference papers on the topic "Semiconductor equations"

1

Mohamed, Norainon, Shaikh Nasir Shaikh Abd. Rahman, Muhamad Zahim Sujod, Mohd Shawal Jadin, and Raja Mohd Taufika Raja Ismail. "Iterative solution method in semiconductor equations." In 2008 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2008. http://dx.doi.org/10.1109/smelec.2008.4770394.

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Roy, C., S. Hughes, and Dmitry N. Chigrin. "Master equations for semiconductor cavity-QED." In THE FOURTH INTERNATIONAL WORKSHOP ON THEORETICAL AND COMPUTATIONAL NANOPHOTONICS: TaCoNa-Photonics 2011. AIP, 2011. http://dx.doi.org/10.1063/1.3644205.

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Kent, A. J., G. D'Alessandro, and J. G. McInerney. "Partial differential rate equations for semiconductor lasers." In Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676104.

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Klymenko, M. V., S. I. Petrov, I. M. Safonov, O. V. Shulika, and I. A. Sukhoivanov. "Semiconductor Bloch equations for quantum-cascade structures." In 2008 International Workshop "THz Radiation: Basic Research and Applications" (TERA). IEEE, 2008. http://dx.doi.org/10.1109/tera.2008.4673821.

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Podzimski, Reinold, Huynh Thanh Duc, Shekhar Priyadarshi, Christian Schmidt, Mark Bieler, and Torsten Meier. "Photocurrents in semiconductors and semiconductor quantum wells analyzed by k.p-based Bloch equations." In SPIE OPTO, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2016. http://dx.doi.org/10.1117/12.2208572.

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GREEN, K., and B. KRAUSKOPF. "SUDDEN TRANSITIONS TO CHAOS IN A SEMICONDUCTOR LASER WITH OPTICAL DELAY." In Proceedings of the International Conference on Differential Equations. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812702067_0101.

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G., Rohith, and Ajayan K.K. "Fractional Interpretation of Anomalous Diffusion and Semiconductor Equations." In 2012 International Symposium on Electronic System Design (ISED). IEEE, 2012. http://dx.doi.org/10.1109/ised.2012.25.

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Speciale, Nicolo, Rossella Brunettil, and Massimo Rudan. "Extending the Numerov Process to the Semiconductor Transport Equations." In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2019. http://dx.doi.org/10.1109/sispad.2019.8870513.

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GALLION, P., and G. DEBARGE. "Rate equations analysis of an injection-locked semiconductor laser." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.tui4.

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Klyukanov, A. A., Natalia A. Loiko, I. V. Babushkin, and V. Gurau. "Hartree-Fock semiconductor Bloch equations and charge density correlations." In XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), edited by Anatoly V. Andreev, Pavel A. Apanasevich, Vladimir I. Emel'yanov, and Alexander P. Nizovtsev. SPIE, 2002. http://dx.doi.org/10.1117/12.468964.

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Reports on the topic "Semiconductor equations"

1

Girndt, A., F. Jahnke, A. Knorr, S. W. Koch, and W. W. Chow. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/486170.

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Cui, Long Liang. Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada344464.

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