Books on the topic 'Semiconductor doping'

E, Levinshteĭn M., and Shur Michael, eds. Semiconductor technology: Processing and novel fabrication techniques. New York: Wiley, 1997.

Fred, Schubert E., ed. Delta-doping of semiconductors. Cambridge: Cambridge University Press, 1996.

Z, Indutnyĭ I., Kurik M. V, and Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), eds. Fotostimulirovannye vzaimodeĭstvii͡a︡ v strukturakh metall-poluprovodnik. Kiev: Nauk. dumka, 1992.

S, Ashok, Materials Research Society Meeting, and Symposium on Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices (2005 : Francisco, Calif.), eds. Semiconductor defect engineering--materials, synthetic structures and devices II: Symposium held April 9-13, 2007, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2007.

S, Zemskov V., and Institut metallurgii im. A.A. Baĭkova., eds. Legirovannye poluprovodnikovye materialy. Moskva: "Nauka", 1985.

International, Conference on Ion Implantation Technology (12th 1998 Kyoto Japan). Ion implantation technology--1998: 1998 International Conference on Ion Implantation Technology : Proceedings, Kyoto, Japan, June 22-26, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.

International Conference on Ion Implantation Technology (10th 1994 Catania, Italy). Ion implantation technology-94: Proceedings of the Tenth International Conference on Ion Implantation Technology, Catania, Italy, June 13-17, 1994. Edited by Coffa S. Amsterdam: North-Holland, 1995.

Jian, Li, Yan Yixun, and National Renewable Energy Laboratory (U.S.), eds. Design of shallow p-type dopants in ZnO: Preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

International Conference on Ion Implantation Technology (9th 1992 Gainesville, Fla.). Ion implantation technology-92: Proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992. Edited by Downey D. F. Amsterdam: North-Holland, 1993.

International Conference on Ion Implantation Technology (11th 1996 Austin, Texas, USA). Ion implantation technology--96: Proceedings of the Eleventh International Conference on Ion Implantation Technology, Austin, Texas, USA, June 16-21, 1996. Edited by Ishida Emi. Piscataway, N.J: Institute of Electrical and Electronics Engineers, 1996.

Ryssel, Heiner. Ion implantation. Chichester: Wiley, 1986.

G, Seebauer Edmund, American Institute of Physics, and Plansee Metal (Firm), eds. Ion implantation technology: 17th International Conference on Ion Implantation Technology : IIT 2008, Monterey, California, 8-13 June 2008. Melville, N.Y: American Institute of Physics, 2008.

International Conference on Ion Implantation Technology (12th 1998 Kyoto, Japan). Ion implantation technology--98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998. Edited by Matsuo J and IEEE Electron Devices Society. Piscataway, N.J: Institute of Electrical and Electronics Engineers, 1999.

International Conference on Ion Implantation Technology (14th 2002 Taos, N.M.). Ion implantation technology: IIT2002 : 2002 International Conference on Ion Implantation Technology : proceedings : Taos, New Mexico, USA, 22-27 September, 2002. Edited by Brown B and Institute of Electrical and Electronics Engineers. Piscataway, N.J: IEEE, 2003.

J, Li, Yan Y, United States. Department of Energy, National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Scientific and Technical Information, and IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.), eds. Design of Shallow p-type Dopants in ZnO (Presentation). Washington, D.C: United States. Dept. of Energy, 2008.

J, Kirkby Karen, ed. Ion implantation technology: 16th International Conference on Ion Implantation Technology, IIT 2006, Marseille, France, 11-16 June 2006. Melville, N.Y: American Institute of Physics, 2006.

Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Konstanz: Hartung-Gorre, 2007.

Jet Propulsion Laboratory (U.S.), ed. An Ohmic model for charge transport in a semiconductor. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1990.

M, Moslehi Mehrdad, Singh Rajendra 1946-, Kwong Dim-Lee, and Society of Photo-optical Instrumentation Engineers., eds. Rapid thermal and integrated processing: 10-11 September 1991, San Jose, California. Bellingham, Wash: SPIE, 1992.

Baudrant, Annie. Silicon technologies: Ion implantation and thermal treatment. London: ISTE, 2011.

Ion implantation: Basics to device fabrication. Boston: Kluwer Academic Publishers, 1995.

National Renewable Energy Laboratory (U.S.) and IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.), eds. Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels: The case of Cu impurity in CdTe : preprint. Golden, CO]: National Renewable Energy Laboratory, 2011.

International, Conference on Ion Implantation in Semiconductors and Other Materials (7th 1983 Vilnius Lithuania). Ionnai͡a︡ implantat͡s︡ii͡a︡ v poluprovodnikakh i drugikh materialakh: Materialy VII-oĭ mezhdunarodnoĭ konferent͡s︡ii, Vilʹni͡u︡s, 26-28 senti͡a︡bri͡a︡ 1983 g. Vilʹni͡u︡s: Izdatelʹsko-redakt͡s︡ionnyĭ sovet Ministerstva vysshego i srednego spet͡s︡ialʹnogo obrazovanii͡a︡ Litovskoĭ SSR, 1985.

Tłaczała, Marek. Epitaksja MOVPE w technologii heterostruktur związków AIIIBV. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2002.

I, Current Michael, Sadana Devendra K, and Society of Photo-optical Instrumentation Engineers., eds. Advanced applications of ion implantation: January 23-25, 1985, Los Angeles, California. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1985.

Klarenbosch, Anton van. Shallow donors in n-GaAs: A FIR laser study. [Leiden?: s.n., 1990.

B, Fair Richard, ed. Rapid thermal processing: Science and technology. Boston: Academic Press, 1993.

B, Cowern Nicholas E., ed. Silicon front-end technology--materials processing and modelling. Warrendale, Pa: Materials Research Society, 1998.

K, Yeoh W., ed. Improvement of vortex pinning in MgB₂ by doping. New York: Nova Science Publishers, 2008.

IEEE International Conference on Advanced Thermal Processing of Semiconductors (15th 2007 Catania, Italy). 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors--RTP 2007: October 2-5, 2007, Grand Hotel Baia Verde, Catania, Italy. Piscataway, NJ: IEEE, 2007.

C, Gelpey Jeffrey, and IEEE Electron Devices Society, eds. 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors--RTP 2002: September 25-27, 2002, the Coast Plaza Hotel, Vancouver, Canada. Piscataway, NJ: IEEE, 2002.

Höfler, Alexander. Development and application of a model hierarchy for silicon process simulation. Konstanz: Hartung-Gorre, 1997.

Or.) IEEE International Conference on Advanced Thermal Processing of Semiconductors (12th 2004 Portland. 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors: RTP 2004 : September 28-30, 2004, Hilton Portland & Executive Tower, Portland, OR. Edited by Gelpey Jeffrey C and IEEE Electron Devices Society. Piscataway, N.J: IEEE, 2004.

International Conference on Advanced Thermal Processing of Semiconductors (9th 2001 Anchorage, Alaska). RTP 2001: 9th International Conference on Advanced Thermal Processing of Semiconductors : September 25-29, 2001, Hilton Anchorage, Alaska. Edited by DeWitt David P. 1934- and Institute of Electrical and Electronics Engineers. [Piscataway, New Jersey: IEEE], 2001.

Alaska) International Conference on Advanced Thermal Processing of Semiconductors (9th 2001 Hilton Anchorage. 9th International Conference on Advanced Thermal Processing of Semiconductors: RTP 2001 : September 25-29, 2001, Hilton Anchorage, Alaska. Edited by DeWitt David P. 1934-2005. Place of publication not identified]: RTP Conference, 2001.

Tej Singh, of Research Reactor Services Division, BARC. and Bhabha Atomic Research Centre, eds. Neutron transmutation doping technology of silicon and overview of trial irradiations at cirus reactor. Mumbai: Bhabha Atomic Research Centre, 2007.

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. Hauppauge, N.Y: Nova Science Publishers, 2009.

International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.

1946-, Singh Rajendra, Moslehi Mehrdad M, and Society of Photo-optical Instrumentation Engineers., eds. Rapid thermal and related processing techniques: 2-3 October 1990, Santa Clara, California. Bellingham, Wash., USA: SPIE, 1991.

1960-, Dierolf Volkmar, and Materials Research Society Meeting, eds. Rare-earth doping for advanced materials for photonic applications - 2011: Symposium held April 25-29, 2011, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2012.

Symposium H on Molecular Electronics: Doping and Recognition in Nanostructured Materials (1993 Strasbourg, France). Molecular electronics: Proceedings of Symposium H on Molecular Electronics: Doping and Recognition in Nanostructured Materials of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993. Amsterdam: North-Holland, 1993.

International Conference on Ion Implantation and Ion Beam Equipment (1990 Elenite, Bulgaria)]. Ion implantation and ion beam equipment: Proceedings of the international conference, Elenite, Bulgaria, September 24-30, 1990. Edited by Karpuzov D. S, Katardjiev I. V, and Todorov S. S. Singapore: World Scientific, 1991.

1955-, Gibson Ursula Jane, White Alice E, and Pronko Peter P, eds. Materials modification and growth using Ion beams: Symposium held April 21-23, 1987, Anaheim, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1987.

A, Steiner Myles, Kanevce Ana, National Renewable Energy Laboratory (U.S.), and IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.), eds. Using measurements of fill factor at high irradiance to deduce heterobarrier band offsets: Preprint. Golden, CO]: National Renewable Energy Laboratory, 2011.

R, Wilson Syd, Powell Ronald A, and Davies D. Eirug, eds. Rapid thermal processing of electronic materials: Symposium held April 21-23, 1987, Anaheim California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1987.

Larrabee, Robert D. Neutron Transmutation Doping of Semiconductor Materials. Springer, 2012.

Larrabee, Robert D. Neutron Transmutation Doping of Semiconductor Materials. Springer, 2013.

(Editor), Karen J. Kirkby, Russell M. Gwilliam (Editor), Andy Smith (Editor), and David Chivers (Editor), eds. Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (AIP Conference Proceedings / Accelerators, Beams, and Instrumentations). American Institute of Physics, 2006.

Schubert, E. F. Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2005.

Pawlak, B. J., M. Law, M. L. Pelaz, and K. Surugo. Doping Engineering for Front-End Processing: Volume 1070. University of Cambridge ESOL Examinations, 2014.