Relevant bibliographies by topics / Semiconductor doping

Academic literature on the topic 'Semiconductor doping'

Author: Grafiati
Published: 4 June 2021
Last updated: 27 July 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Semiconductor doping.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Semiconductor doping"

1

Zeng, Yan, Guangchao Han, and Yuanping Yi. "Impact of n-Doping Mechanisms on the Molecular Packing and Electron Mobilities of Molecular Semiconductors for Organic Thermoelectrics." Organic Materials 4, no. 01 (January 2022): 1–6. http://dx.doi.org/10.1055/a-1729-5728.

Full text
Abstract:
Electrical conductivity is one of the key parameters for organic thermoelectrics and depends on both the concentration and mobility of charge carriers. To increase the carrier concentration, molecular dopants have to be added into organic semiconductor materials, whereas the introduction of dopants can influence the molecular packing structures and hence carrier mobility of the organic semiconductors. Herein, we have theoretically investigated the impact of different n-doping mechanisms on molecular packing and electron transport properties by taking (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI-H) and quinoid-dicyanomethylene-dipyrrolo-[3,4-c]pyrrole-1,4-diylidene)bis(thieno[3,2-b]thiophene (Q-DCM-DPPTT) respectively as representative n-dopant and molecular semiconductor. The results show that when the doping reactions and charge transfer spontaneously occur in the solution at room temperature, the oppositely charged dopant and semiconductor molecules will be tightly bound to disrupt the semiconductor to form long-range molecular packing, leading to a substantial decrease of electron mobility in the doped film. In contrast, when the doping reactions and charge transfer are activated by heating the doped film, the molecular packing of the semiconductor is slightly affected and hence the electron mobility remains quite high. This work indicates that thermally activated n-doping is an effective way to achieve both high carrier concentration and high electron mobility in n-type organic thermoelectric materials.
APA, Harvard, Vancouver, ISO, and other styles
2

Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (June 19, 2019): 1972. http://dx.doi.org/10.3390/ma12121972.

Full text
Abstract:
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.
APA, Harvard, Vancouver, ISO, and other styles
3

Liu, Ting, Chen Li, Beilei Yuan, Yang Chen, Haoming Wei, and Bingqiang Cao. "Dopant compensation in p-type doped MAPb1−xCuxI3 alloyed perovskite crystals." Applied Physics Letters 121, no. 1 (July 4, 2022): 012102. http://dx.doi.org/10.1063/5.0095370.

Full text
Abstract:
Tuning the optical and electrical properties of semiconductors by designed doping is the basis of most energy-related semiconductor optoelectronic devices. In this Letter, we report the dopant compensation effect of P-type doped MAPb1− x Cu xI3 alloyed perovskite crystals. MAPb1− xCu xI3 single crystals were prepared by the inverse temperature crystallization method using cupric chloride (CuCl2) as the doping source. By XRD, XPS, STEM, and photoluminescence (PL) spectra analyses, we demonstrate that the doped cupric (Cu2+) ions can partially substitute lead (Pb2+) ions and form Cu–Pb based crystal semiconductor alloys of MAPb1− xCu xI3 with tunable bandgap by controlling the Pb/Cu ratio. More detailed XPS analysis of the doped crystal shows that the Cu2+ ions in MAPb1− xCu xI3 are partially reduced by I− ions, and the coexistence of two valence states of Cu species (Cu2+ and Cu+) was observed in the doped crystals. Hall results of MAPb1− xCu xI3 semiconductors show that the presence of reduced Cu+ ions impels the change of conductive type from weak N-type to P-type obviously, while the resistivity of doped MAPb1− xCu xI3 increases significantly from 104 to 107 Ω cm. The defect-related optical fingerprints of cupric doped crystals were investigated in detail by temperature-dependent PL spectroscopy. The pristine MAPbI3 perovskite crystal exhibits intrinsic donor bound exciton (D0X) luminescence at low temperature (10 K), while the doped MAPb1− xCu xI3 perovskites exhibit donor-acceptor or bound exciton (A0X) peaks related to a Cu+ dopant in sequence with the increase in the Cu ion content. These results indicate that the doping of Cu2+/+ ions into the MAPb1− xCu xI3 crystal not only changes the semiconductor bandgap but also causes the dopant compensation.
APA, Harvard, Vancouver, ISO, and other styles
4

Lee, Hyeonju, Xue Zhang, Bokyung Kim, Jin-Hyuk Bae, and Jaehoon Park. "Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors." Materials 14, no. 20 (October 15, 2021): 6118. http://dx.doi.org/10.3390/ma14206118.

Full text
Abstract:
In order to implement oxide semiconductor-based complementary circuits, the improvement of the electrical properties of p-type oxide semiconductors and the performance of p-type oxide TFTs is certainly required. In this study, we report the effects of iodine doping on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. The CuO semiconductor films were fabricated using copper(II) acetate hydrate as a precursor to solution processing, and iodine doping was performed using vapor sublimated from solid iodine. Doped iodine penetrated the CuO film through grain boundaries, thereby inducing tensile stress in the film and increasing the film’s thickness. Iodine doping contributed to the improvement of the electrical properties of the solution-processed CuO semiconductor including increases in Hall mobility and hole-carrier concentration and a decrease in electrical resistivity. The CuO TFTs exhibited a conduction channel formation by holes, that is, p-type operation characteristics, and the TFT performance improved after iodine doping. Iodine doping was also found to be effective in reducing the counterclockwise hysteresis in the transfer characteristics of CuO TFTs. These results are explained by physicochemical reactions in which iodine replaces oxygen vacancies and oxygen atoms through the formation of iodide anions in CuO.
APA, Harvard, Vancouver, ISO, and other styles
5

Erwin, Steven C., Lijun Zu, Michael I. Haftel, Alexander L. Efros, Thomas A. Kennedy, and David J. Norris. "Doping semiconductor nanocrystals." Nature 436, no. 7047 (July 2005): 91–94. http://dx.doi.org/10.1038/nature03832.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Telford, Mark. "Doping semiconductor nanocrystals." Materials Today 8, no. 9 (September 2005): 10. http://dx.doi.org/10.1016/s1369-7021(05)71063-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Kim, Dongwook, Hyeonju Lee, Bokyung Kim, Sungkeun Baang, Kadir Ejderha, Jin-Hyuk Bae, and Jaehoon Park. "Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance." Materials 15, no. 19 (September 29, 2022): 6763. http://dx.doi.org/10.3390/ma15196763.

Full text
Abstract:
The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.
APA, Harvard, Vancouver, ISO, and other styles
8

Caccamo, Sebastiano, and Rosaria Anna Puglisi. "Carbon-Free Solution-Based Doping for Silicon." Nanomaterials 11, no. 8 (August 5, 2021): 2006. http://dx.doi.org/10.3390/nano11082006.

Full text
Abstract:
Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raised. In this paper, we use phosphoric acid as a precursor of the dopant. It does not contain carbon and has a smaller steric footprint than the molecules used in the literature, thus allowing a much higher predetermined surface density. We demonstrate doses of electrical carriers as high as 3 × 1015 #/cm2, with peaks of 1 × 1020 #/cm3, and high repeatability of the process, indicating an outstanding yield compared to traditional MD methods.
APA, Harvard, Vancouver, ISO, and other styles
9

Tavkhelidze, Avtandil, Larissa Jangidze, Zaza Taliashvili, and Nima E. Gorji. "G-Doping-Based Metal-Semiconductor Junction." Coatings 11, no. 8 (August 7, 2021): 945. http://dx.doi.org/10.3390/coatings11080945.

Full text
Abstract:
Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-probe method has been deployed to exclude the contribution of metal-semiconductor interface. The collected data show a considerably lower reverse current in p-type substrates with nanograting pattern. In the case of p+-type substrate, nanograting reduced the reverse current dramatically (by 1–2 orders of magnitude). However, the forward currents are not affected in both substrates. We explained these unusual I–V characteristics with G-doping theory and p-p(v) junction formation mechanism. The decrease of reverse current is explained by the drop of carrier generation rate which resulted from reduced density of quantum states within the G-doped region. Analysis of energy-band diagrams suggested that the magnitude of reverse current reduction depends on the relationship between G-doping depth and depletion width.
APA, Harvard, Vancouver, ISO, and other styles
10

Xu, Zhichao. "Research On Mg Doping in Nitride Semiconductor Materials." Highlights in Science, Engineering and Technology 71 (November 28, 2023): 254–58. http://dx.doi.org/10.54097/hset.v71i.12707.

Full text
Abstract:
Summarized the achievements of various model research directions in nitride Mg doped semiconductors in this thesis. Due to the Internal properties of Mg acceptors which resulting the low ionization rate of acceptor, and the low hole mobility in heavily Mg doped nitrides, the conductivity of Mg doped nitrides is limited. At present, research is divided into three categories of models, one is a new type of polarization model. This model adopts a built-in electron polarization ionization acceptor dopant in the bulk uniaxial semiconductor crystal, and provides an attractive solution for the problem of P-type and n-type doping in broadband gap semiconductors. The other two are the traditional thermal activation model. There are mainly ultra-high-pressure-annealing (UHPA) and multicycle rapid thermal annealing (MRTA) respectively. Both of these schemes can activate more Mg impurities, resulting in higher conductivity in nitrides. The principles, advantages and disadvantages, and future development prospects will be explained of these three models in this thesis.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Semiconductor doping"

1

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

Full text
Abstract:
The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and differential transmission spectra. The measured spectra reveal several beautiful effects which are attributed to the many-particle effects of electron-hole plasma. The spectra reveal: bandgap renormalization, broadening of the tail states and screening of the continuum states, state filling (spectral hole burning), thermalization of nonthermal carrier population distributions, band filling due to carrier relaxation of the thermal and nonthermal distributions, direct electron-hole recombination and long lived (>>100 ps) tail states which are attributed to electron trapping. Absorption edge dynamics discussed in this dissertation span 15 orders of magnitude.
APA, Harvard, Vancouver, ISO, and other styles
3

Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Daniels-Hafer, Carrie Lynn. "Electrochemical tuning of charge transport at inorganic semiconductor doped conjugated polymer interfaces through manipulation of electrochemical potential /." view abstract or download file of text, 2004.

Find full text
Abstract:
Thesis (Ph. D.)--University of Oregon, 2004.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 185-196). Also available for download via the World Wide Web; free to University of Oregon users.
APA, Harvard, Vancouver, ISO, and other styles
6

Los, Andrei. "Influence of carrier freeze-out on SiC Schottky junction admittance." Diss., Mississippi State : Mississippi State University, 2001. http://library.msstate.edu/etd/show.asp?etd=etd-03272001-120540.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Leong, Hank W. H. "Investigation of dopant profiles from capacitance-voltage measurements on Schottky diodes." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29997.

Full text
Abstract:
Measurement of the differential capacitance (C) of a Schottky diode as a function of voltage (V) is widely used to probe dopant profiles in semiconductors. However, the theory of the dopant profiling method is based on an approximation, and does not work well when the dopant concentration changes rapidly with distance. The region beyond the maximum of an implanted Gaussian profile is of particular interest in connection with ingot qualification tests for GaAs, and it is just there that the problem is the most serious. In this thesis, an investigation was made by numerical simulation on problems associated with the profiling method. Programs were written to calculate the differential capacitance-voltage relation for GaAs Schottky diodes with and without deep energy levels, and with a specified dopant distribution. The programs predict what the approximation method would indicate for the dopant profiles according to a set of canonical equations used in the profiling method. The predicted and the specified dopant profiles were then compared. Mainly ion-implanted dopant profiles in semiconductors were studied although doped epitaxial layers were also considered. For ion-implanted GaAs, the predicted dopant profiles were found to be about 10% lower near the peak region than the true dopant profiles, and the predicted profiles were confirmed to be too high in the tail region. For doped epitaxial layers, the predicted profile was found, in some cases, to give good estimates for the dopant concentrations on the high and low sides of the true step profile, but in some others, the predicted profiles were found to be totally misleading. For GaAs with deep levels, a method of calculating the differential capacitance was developed to take into account the fact that the deep levels do not respond to the 1 MHz a.c. signal normally used in the C(V) measurements. It is believed to simulate the experimental C(V) measurements more realistically. The tail sections of the predicted profiles were found to increase with the concentration of background shallow donor atoms in the deep-level-free semiconductor before ion-implantation, and with the number of impurity atoms which are channelled or diffused to the region during or after ion-implantation. This implies that although the profiling method is erroneous in the tail section, it can nevertheless be used on a comparative basis to indicate the level of background shallow dopant concentration, and the degree of channelling or diffusion. The effects of the substrate parameters in liquid encapsulated Czochralski (LEC) GaAs, which include the concentrations of EL2, net shallow acceptors, and sometimes Cr, have been investigated on the predicted dopant profiles for ion-implanted samples. Increases in Cr and net shallow acceptor concentrations were found to increase the steepness of the predicted dopant profile, while an increase in EL2 concentration has little effect. A method of estimating dopant activation efficiency in GaAs has been proposed. This method uses the author's second program to avoid underestimations of the activation efficiency in GaAs caused by the peak lowering in the predicted dopant profiles. The concept of Debye length in semi-insulating LEC GaAs was also discussed. The Debye length given by the standard formula for semiconductors with shallow donors and acceptors can become inapplicable when deep levels are present.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
APA, Harvard, Vancouver, ISO, and other styles
8

Sung, Talun. "Doping diamond by forced diffusion /." free to MU campus, to others for purchase, 1996. http://wwwlib.umi.com/cr/mo/fullcit?p9720551.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Chang, Ruey-dar. "Physics and modeling of dopant diffusion for advanced device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Myers, Joseph Kenneth. "Inverse doping profile analysis for semiconductor quality control." Diss., Wichita State University, 2009. http://hdl.handle.net/10057/2556.

Full text
Abstract:
Inverse doping pro le problems are linked to inverse conductivity problems under the assumptions of zero space charge and low injection. Unipolar inverse conductivity problems are analyzed theoretically via three uniqueness proofs, the rst of which has been published as a paper in Inverse Problems [34]. Also, optimized numerical methods are developed for solving the unipolar direct conductivity problem with a piecewise constant conductivity coe cient. Finally, the unipolar inverse conductivity problem is solved for inclusions de ned by as many as 9 parameters, or by as many as 120 parameters when an initial guess for each parameter is known with less than 10% error. Our free boundary identi cation algorithm produces a sequence of improved approximations in a way that provides both regularization and accelerated convergence towards the solution.
Thesis (Ph.D.)--Wichita State University, College of Liberal Arts and Sciences, Dept. of Mathematics and Statistics
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Semiconductor doping"

1

E, Levinshteĭn M., and Shur Michael, eds. Semiconductor technology: Processing and novel fabrication techniques. New York: Wiley, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Fred, Schubert E., ed. Delta-doping of semiconductors. Cambridge: Cambridge University Press, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Z, Indutnyĭ I., Kurik M. V, and Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), eds. Fotostimulirovannye vzaimodeĭstvii͡a︡ v strukturakh metall-poluprovodnik. Kiev: Nauk. dumka, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

S, Ashok, Materials Research Society Meeting, and Symposium on Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices (2005 : Francisco, Calif.), eds. Semiconductor defect engineering--materials, synthetic structures and devices II: Symposium held April 9-13, 2007, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2007.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

S, Zemskov V., and Institut metallurgii im. A.A. Baĭkova., eds. Legirovannye poluprovodnikovye materialy. Moskva: "Nauka", 1985.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

International, Conference on Ion Implantation Technology (12th 1998 Kyoto Japan). Ion implantation technology--1998: 1998 International Conference on Ion Implantation Technology : Proceedings, Kyoto, Japan, June 22-26, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

International Conference on Ion Implantation Technology (10th 1994 Catania, Italy). Ion implantation technology-94: Proceedings of the Tenth International Conference on Ion Implantation Technology, Catania, Italy, June 13-17, 1994. Edited by Coffa S. Amsterdam: North-Holland, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Jian, Li, Yan Yixun, and National Renewable Energy Laboratory (U.S.), eds. Design of shallow p-type dopants in ZnO: Preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

International Conference on Ion Implantation Technology (9th 1992 Gainesville, Fla.). Ion implantation technology-92: Proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992. Edited by Downey D. F. Amsterdam: North-Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

International Conference on Ion Implantation Technology (11th 1996 Austin, Texas, USA). Ion implantation technology--96: Proceedings of the Eleventh International Conference on Ion Implantation Technology, Austin, Texas, USA, June 16-21, 1996. Edited by Ishida Emi. Piscataway, N.J: Institute of Electrical and Electronics Engineers, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Semiconductor doping"

1

Hilleringmann, Ulrich. "Doping Techniques." In Silicon Semiconductor Technology, 81–102. Wiesbaden: Springer Fachmedien Wiesbaden, 2023. http://dx.doi.org/10.1007/978-3-658-41041-4_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Maan, J. C. "Doping Superlattices." In Heterojunctions and Semiconductor Superlattices, 146–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0_11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Böer, Karl W. "Doping and Junction Formation." In Survey of Semiconductor Physics, 963–97. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_30.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Pernot, Julien, Fabrice Donatini, and Pierre Tchoulfian. "Doping and Transport." In Wide Band Gap Semiconductor Nanowires 1, 99–123. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984321.ch5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Hueting, Raymond J. E., and Gaurav Gupta. "Electrostatic Doping and Devices." In Springer Handbook of Semiconductor Devices, 371–89. Cham: Springer International Publishing, 2012. http://dx.doi.org/10.1007/978-3-030-79827-7_11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Gossard, A. C. "Modulation Doping of Semiconductor Heterostructures." In Molecular Beam Epitaxy and Heterostructures, 499–531. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3_14.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Fukata, Naoki. "Impurity Doping in Semiconductor Nanowires." In Fundamental Properties of Semiconductor Nanowires, 143–81. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-9050-4_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Crowne, F., T. L. Reinecke, and B. V. Shanabrook. "Excitons in Semiconductor Doping Superlattices." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 363–66. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_79.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Mertens, R. "Heavy Doping Effects and Their Influence on Silicon Bipolar Transistors." In Semiconductor Silicon, 309–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_25.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Zittel, W. "Simulation of Laser-Assisted Doping of Silicon — The Temperature Distribution." In Semiconductor Silicon, 80–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Semiconductor doping"

1

Saxena, Avadh, and J. D. Gunton. "Quasi-One-Dimensional Doping Superlattices." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940821.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Iyer, D., A. Messinger, R. Crowder, Y. Zhang, O. Amster, S. Friedman, Y. Yang, and F. Stanke. "Measurement of Dielectric Constant and Doping Concentration of a Cross-Sectioned Device by Quantitative Scanning Microwave Impedance Microscopy." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0613.

Full text
Abstract:
Abstract Scanning microwave impedance microscopy (sMIM) is an emerging technique that can provide detailed information beyond that of conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the investigation and failure analysis (FA) of semiconductor devices. Integration of new dielectric materials at lower levels of the device structure with the need for quantification of dielectric and dopants in semiconductor devices with sub-micron spatial resolution pushes the practical boundaries of typical atomic force microscopy (AFM) electrical modes. sMIM can measure both linear and non-linear materials (insulators and doped semiconductors, respectively) simultaneously. sMIM has a linear response to log k (dielectric number) and log N (doping concentration) making it an ideal method for providing quantitative measurements of semiconductor devices over a large range of values. This work demonstrates an example of a practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant calibration sample is used to calibrate the sMIM prior to performing the measurements on an “unknown” production device. We utilize nanoscale C-V data to establish a calibration curve for both n- and p-type carriers and apply the calibration curve to an “unknown” device, presenting the measurements in units of doping concentration.
APA, Harvard, Vancouver, ISO, and other styles
3

Bauer, G., and W. Jantsch. "PbTe-Doping Superlattices - Physics And Applications." In 1988 Semiconductor Symposium, edited by Federico Capasso, Gottfried H. Doehler, and Joel N. Schulman. SPIE, 1988. http://dx.doi.org/10.1117/12.947300.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ackley, D. E., H. Lee, N. Nouri, and C. Colvard. "AlGaAs Doping Superlattices Grown By MBE." In 1988 Semiconductor Symposium, edited by Federico Capasso, Gottfried H. Doehler, and Joel N. Schulman. SPIE, 1988. http://dx.doi.org/10.1117/12.947303.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Ruden, P. Paul. "Electrical And Optical Properties Of Semiconductor Doping Superlattices." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940818.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Chang-Hasnain, C. J., G. Hasnain, G. H. Dohler, N. M. Johnson, J. N. Miller, J. R. Whinnery, and A. Dienes. "Tunable Electroabsorption And Electroluminescence In GaAs Doping Superlattices." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940819.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Schetzina, J. F., R. N. Bicknell, N. C. Giles, and R. L. Harper. "Photoassisted Mbe: A New Approach To Substitutional Doping." In Semiconductor Conferences, edited by Robert L. Gunshor and Hadis Morkoc. SPIE, 1987. http://dx.doi.org/10.1117/12.940997.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Stracquadanio, G., C. Drago, V. Romano, and G. Nicosia. "Doping profile optimization in semiconductor design." In 2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009). IEEE, 2009. http://dx.doi.org/10.1109/icecs.2009.5410984.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

ALÌ, G., I. TORCICOLLO, and S. VESSELLA. "INVERSE DOPING PROBLEMS FOR SEMICONDUCTOR DEVICES." In Proceedings of the 13th Conference on WASCOM 2005. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773616_0002.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Borschel, C., R. Niepelt, S. Geburt, and C. Ronning. "Ion beam doping of semiconductor nanowires." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424451.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Semiconductor doping"

1

Moll, Amy Jo. Carbon doping of III-V compound semiconductors. Office of Scientific and Technical Information (OSTI), September 1994. http://dx.doi.org/10.2172/10196996.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Nguyen, Thuc-Quyen. Understanding Lewis Acid Doping Mechanisms in Novel Organic Semiconductors. Office of Scientific and Technical Information (OSTI), March 2022. http://dx.doi.org/10.2172/1854606.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Ihlefeld, Jon, Elizabeth A. Paisley, Beechem, Thomas Edwin,, and Andrew Armstrong. Fundamental Science of Doping and Defects in Ga2O3 for Next Generation Power Semiconductors. Office of Scientific and Technical Information (OSTI), October 2016. http://dx.doi.org/10.2172/1563071.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Parkinson, Bruce A., and He Jianghua. Combinatorial Discovery and Optimization of the Composition, Doping and Morphology of New Oxide Semiconductors for Efficient Photoelectrochemical Water Splitting. Office of Scientific and Technical Information (OSTI), January 2015. http://dx.doi.org/10.2172/1167006.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Schubert, Fred. Workshop on Doping, Dopants and Low Field Carrier Dynamics in Wide Gap Semiconductors Held in Copper Mountain Resort, Copper Mountain, CO on April 2-6, 2000. Meeting Program and Abstract Book. Fort Belvoir, VA: Defense Technical Information Center, March 2000. http://dx.doi.org/10.21236/ada375866.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Semiconductor doping' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography