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Journal articles on the topic 'Semiconductor alloys'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (October 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

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2

Stringfellow, G. B. "Order and Surface Processes in III-V Semiconductor Alloys." MRS Bulletin 22, no. 7 (July 1997): 27–32. http://dx.doi.org/10.1557/s0883769400033376.

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Semiconductor alloys have become increasingly useful during the last four decades because, through the use of alloys, the properties of semiconductors can be tailored by varying the composition to precisely match the requirements for specific electronic and photonic devices. In addition the use of alloys allows the production of special structures, such as quantum wells, that require rapid changes in bandgap energy during growth. This has led to so-called “bandgap engineering,” in which device designers and epitaxial growers are working together to produce structures having virtually atomic-scale dimensions.

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3

ONABE, Kentaro. "Compound semiconductor alloys." Nihon Kessho Gakkaishi 28, no. 2 (1986): 114–23. http://dx.doi.org/10.5940/jcrsj.28.114.

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4

Melrose, J. R. "Alloy scattering with correlation in semiconductor alloys." Semiconductor Science and Technology 2, no. 6 (June 1, 1987): 371–77. http://dx.doi.org/10.1088/0268-1242/2/6/009.

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5

Bernard, J. E. "Ordering in Semiconductor Alloys." Materials Science Forum 155-156 (May 1994): 131–48. http://dx.doi.org/10.4028/www.scientific.net/msf.155-156.131.

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6

Bernard, J. E., R. G. Dandrea, L. G. Ferreira, S. Froyen, S. ‐H Wei, and A. Zunger. "Ordering in semiconductor alloys." Applied Physics Letters 56, no. 8 (February 19, 1990): 731–33. http://dx.doi.org/10.1063/1.102695.

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7

Martins, José Luís, and Alex Zunger. "Ordering and decomposition in semiconductor alloys." Journal of Materials Research 1, no. 4 (August 1986): 523–26. http://dx.doi.org/10.1557/jmr.1986.0523.

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The stability of ordered semiconductor alloys has been studied, using total energy pseudopotential calculations. The ordered alloys are found to be stabilized with respect to disordered alloys via reduction of the internal strain and by chemical interactions. The Si–C and Si–Ge systems are used as illustrations, finding that ordered Six Ge1−x should be a metastable alloy, in agreement with experimental observations.

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8

Huang, Haishen, Kun Yang, Wan Zhao, Tingyan Zhou, Xiude Yang, and Bo Wu. "High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P)." Applied Sciences 9, no. 14 (July 18, 2019): 2859. http://dx.doi.org/10.3390/app9142859.

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In this paper, the structure and the electronic and magnetic properties of VFeScZ (Z = Sb, As, P) series alloys are systematically studied based on the Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation (GGA) calculation within the first-principles density functional theory. The results showed that VFeScSb and VFeScP are ferromagnetic semiconductors and VFeScAs exhibits half-metallic ferromagnetism under zero pressure. As the pressure increases, the narrow indirect gap of VFeScZ (Z = Sb, As, P) alloy gradually decreases, and gets close to zero, leading to spin gapless semiconductor (SGS) transition. The pressure phase transition point of VFeScSb, VFeScAs, and VFeScP alloy is 132 GPa, 58 GPa, and 32 GPa, respectively. As a result, the pressure effect provides an opportunity to tune the electronic properties of the alloys by external pressure. The present findings provide a technical method for us to actually use the Heusler alloy SGS.

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9

Kim, In Yea, Gi hwan Lim, Chae Yoon Kim, Min-Jeong Lee, Jaehun Kim, Dong Hyun Kim, and Jae-Hong Lim. "Fabrication and Characterization of Conductive FeCo@Au Nanowire Alloys for Semiconductor Connector." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 856. http://dx.doi.org/10.1149/ma2022-0217856mtgabs.

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A semiconductor test socket is one of the essential components for final electrical and performance testing of semiconductors. Due to the miniaturization of semiconductors, fine pinching of test sockets is required, so research on connectors for semiconductor inspection capable of fine processing is being actively conducted. The connector for semiconductor inspection consists of a powder coated with conductive powder on a magnetic material and rubber, and an electrical signal is transmitted through the conductive powder. A finer pitch rubber test socket shall maintain the electrical characteristics (resistance) at the same level, even though a smaller conductive path is formed as the gap between conductive paths narrows to respond to the increase in demand for fine pitch products. Therefore, in this study, a technique for forming a conductive pathway between conductive powders to maintain the electrical properties of a semiconductor socket for fine pitch is introduced. In order to effectively improve a thin conductive path, a conductive nanowire was prepared to form a conductive pathway between conductive powders. Fig. 1 shows the schematic diagram for the fabrication of FeCo nanowires. FeCo nanowires were synthesized through electroplating using AAO (Anodic Aluminum Oxide) as a template, and Au as a conductive material was coated on the surface of FeCo wires through an electrochemical method to synthesize FeCo@Au. To uniformly coat Au on the surface of the FeCo wire during the coating process, sonication, vortex, and stay three methods were compared, as shown in Fig. 2. As a result of confirming the surface shape by SEM, the most uniform method was confirmed by the vortex method. In addition, the magnetic properties of FeCo@Au synthesized with a smooth surface were analyzed through VMS (Vibrating Sample Magnetometer). As a result, it can be confirmed that alignment through magnetism is possible. From these results, it was confirmed that the method of increasing the electrical conductivity by adding a wire to reduce resistance of semiconductor connector. Figure 1

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10

Ling, M. F., and D. J. Miller. "Band structure of semiconductor alloys." Physical Review B 38, no. 9 (September 15, 1988): 6113–19. http://dx.doi.org/10.1103/physrevb.38.6113.

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11

Woicik, J. "Bond lengths in semiconductor alloys." Journal of Synchrotron Radiation 6, no. 3 (May 1, 1999): 570–72. http://dx.doi.org/10.1107/s0909049598015556.

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12

Krishnamurthy, Srinivasan, M. A. Berding, A. Sher, and A. ‐B Chen. "Ballistic transport in semiconductor alloys." Journal of Applied Physics 63, no. 9 (May 1988): 4540–47. http://dx.doi.org/10.1063/1.340152.

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13

Dugaev, V. K., and P. P. Petrov. "Spinodal Decomposition in Semiconductor Alloys." physica status solidi (b) 153, no. 1 (May 1, 1989): 115–22. http://dx.doi.org/10.1002/pssb.2221530110.

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14

Zunger, Alex. "Spontaneous Atomic Ordering in Semiconductor Alloys: Causes, Carriers, and Consequences." MRS Bulletin 22, no. 7 (July 1997): 20–26. http://dx.doi.org/10.1557/s0883769400033364.

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For many years, it was believed that when two isovalent semiconductors are mixed, they will phase-separate (like oil and water) at low temperature, they will form a solid solution (like gin and tonic) at high temperatures, but they will never produce ordered atomic arrangements. This view was based on the analysis of the solid-liquid equilibria at high temperatures and on empirical observation of phase separation at low temperatures. These observations were further rationalized and legitimized by applying the classic (Hildebrand) solution models, which predicted just this type of behavior. These models showed that the observed behavior of the AxB1 − x alloys implied a positive excess enthalpy ΔH(x) = E(x) − xE(A) − (1 − x)E(B) (where E is the total energy) and that this positiveness (“repulsive A-B interactions”) resulted from the strain energy attendant upon packing two solids with dissimilar lattice constants. The larger the lattice mismatch, the more difficult it was to form the alloy. Common to these approaches (“regular solution theory,” “quasiregular solution theory,” “delta lattice-parameter model,” etc.) was the assumption that the enthalpy ΔH(x) of an alloy depends on its global composition x but not on the microscopic arrangement of atoms (e.g., ordered versus disordered). Thus, ordered and disordered configurations at the same compo sition x were tacitly assumed to have the same excess enthalpy ΔH(x). Clearly the option for ordering was eliminated at the outset. While these theories served to produce very useful depictions of the immiscibility of many semiconductor alloys (and continue to guide strategies of crystal growth), they also cemented the paradigm that semiconductor alloys don't order, they just phase-separate. This was true, at the time.

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15

Stringfellow, G. B. "Epitaxial growth of metastable semiconductor alloys." Journal of Crystal Growth 564 (June 2021): 126065. http://dx.doi.org/10.1016/j.jcrysgro.2021.126065.

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16

Demichelis, F., G. Kaniadakis, A. Tagliaferro, and E. Tresso. "Tetrahedrally bonded ternary amorphous semiconductor alloys." Physical Review B 40, no. 3 (July 15, 1989): 1647–51. http://dx.doi.org/10.1103/physrevb.40.1647.

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17

Levander, A. X., K. M. Yu, S. V. Novikov, A. Tseng, C. T. Foxon, O. D. Dubon, J. Wu, and W. Walukiewicz. "GaN1−xBix: Extremely mismatched semiconductor alloys." Applied Physics Letters 97, no. 14 (October 4, 2010): 141919. http://dx.doi.org/10.1063/1.3499753.

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18

Lee, Seongbok, and John D. Dow. "Electronic structure ofPb1−xSnxTe semiconductor alloys." Physical Review B 36, no. 11 (October 15, 1987): 5968–73. http://dx.doi.org/10.1103/physrevb.36.5968.

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19

Kuech, Thomas F., Luke J. Mawst, and April S. Brown. "Mixed Semiconductor Alloys for Optical Devices." Annual Review of Chemical and Biomolecular Engineering 4, no. 1 (June 7, 2013): 187–209. http://dx.doi.org/10.1146/annurev-chembioeng-061312-103359.

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20

Krishnamurthy, Srinivasan, A. Sher, M. Madou, and A. ‐B Chen. "Semiconductor alloys for fast thermal sensors." Journal of Applied Physics 64, no. 3 (August 1988): 1530–32. http://dx.doi.org/10.1063/1.341828.

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21

Schabel, Matthias C., and José Luriaas Martins. "Structural model for pseudobinary semiconductor alloys." Physical Review B 43, no. 14 (May 15, 1991): 11873–83. http://dx.doi.org/10.1103/physrevb.43.11873.

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22

Castner, T. G. "Critical conductivity for semiconductor–metal alloys." Physica B: Condensed Matter 284-288 (July 2000): 1679–81. http://dx.doi.org/10.1016/s0921-4526(99)02887-2.

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23

Höglund, A., C. W. M. Castleton, O. Eriksson, and S. Mirbt. "Controlling dopant solubility in semiconductor alloys." Journal of Physics: Conference Series 242 (July 1, 2010): 012014. http://dx.doi.org/10.1088/1742-6596/242/1/012014.

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24

Siol, Sebastian. "Accessing Metastability in Heterostructural Semiconductor Alloys." physica status solidi (a) 216, no. 15 (February 25, 2019): 1800858. http://dx.doi.org/10.1002/pssa.201800858.

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25

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.

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26

Kilanski, L., W. Dobrowolski, R. Szymczak, E. Dynowska, M. Wójcik, M. Romcevic, N. Romcevic, I. V. Fedorchenko, and S. F. Marenkin. "Chalcopyrite semimagnetic semiconductors: From nanocomposite to homogeneous material." Science of Sintering 46, no. 3 (2014): 271–81. http://dx.doi.org/10.2298/sos1403271k.

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Currently, complex ferromagnetic semiconductor systems are of significant interest due to their potential applicability in spintronics. A key feature in order to use semiconductor materials in spintronics is the presence of room temperature ferromagnetism. This feature was recently observed and is intensively studied in several Mn-alloyed II-IV-V2 group diluted magnetic semiconductor systems. The paper reviews the origin of room temperature ferromagnetism in II-IV-V2 compounds. In view of our recent reports the room temperature ferromagnetism in Mn-alloyed chalcopyrite semiconductors with more than 5 molar % of Mn is due to the presence of MnAs clusters. The solubility of magnetic impurities in bulk II-IV-V2 materials is of the order of a few percent, depending on the alloy composition. High values of the conducting hole - Mn ion exchange constant Jpd have significant value equal to 0.75 eV for Zn0.997Mn0.003GeAs2. The sample quality has significant effect on the magnetotransport of the alloy. The magnetoresistance of the alloy change main physical mechanism from spin-disorder scattering and weak localization for homogeneous samples to cluster-related geometrical effect observed for nanocomposite samples. The magnetoresistance of the II-IV-V2 alloys can be then tuned up to a few hundreds of percent via changes of the chemical composition of the alloy as well as a degree of disorder present in a material.

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27

NARAYANAMURTI, VENKATESH, and MICHAEL KOZHEVNIKOV. "THE ROLE OF BALLISTIC ELECTRON EMISSION MICROSCOPY FOR CHARACTERIZATION OF PHYSICAL PHENOMENA IN SEMICONDUCTOR ALLOYS AND QUANTUM STRUCTURES." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 55–74. http://dx.doi.org/10.1142/s012915640000009x.

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The measurement of the physical properties of individual semiconductor quantum objects at a length scale corresponding to the de Broglie wavelength of electrons in most semiconductors (a few mm) is a difficult challenge. Determination of spectroscopic properties of individual quantum objects buried below the surface is particularly daunting. In this paper we will review briefly recent progress in the use of BEEM (ballistic electron emission microscopy) for the study of semiconductor alloys and novel quantum objects. We will also discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. Examples of the use of this technique for studying buried heterojunctions will be presented. Potential modifications of the technique for imaging the optical emission under conditions of ballistic electron injection will also be discussed.

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28

Millunchick, J. Mirecki, R. D. Twesten, S. R. Lee, D. M. Follstaedt, E. D. Jones, S. P. Ahrenkiel, Y. Zhang, H. M. Cheong, and A. Mascarenhas. "Spontaneous Lateral Composition Modulation in III-V Semiconductor Alloys." MRS Bulletin 22, no. 7 (July 1997): 38–43. http://dx.doi.org/10.1557/s088376940003339x.

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The application of III-V semiconductor alloys in device structures is of importance for high-speed microelectronics and optoelectronics. These alloys have allowed the device engineer to tailor material parameters such as the bandgap and carrier mobility to the need of the device by altering the alloy composition. When using ternary or quaternary materials, the device designer presumes that the alloy is completely disordered, without any correlation between the atoms on the cation (anion) sublattice. However the thermodynamics of the alloy system often produce material that has some degree of macroscopic or microscopic ordering. Short-range ordering occurs when atoms adopt correlated neighboring positions over distances of the order of a few lattice spacings. This can be manifested as the preferential association of like atoms, as in clustering, or of unlike atoms, as in chemical ordering (e.g., CuPt ordering). Long-range ordering occurs over many tens of lattice spacings, as in the case of phase separation. In either short-range or long-range ordering, the band structure and the crystal symmetry are greatly altered. Therefore it is absolutely critical that the mechanisms be fully understood to prevent ordering when necessary or to exploit it when possible.

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29

Robertson, John. "Silicon versus the rest." Canadian Journal of Physics 92, no. 7/8 (July 2014): 553–60. http://dx.doi.org/10.1139/cjp-2013-0543.

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We review the material properties that allowed amorphous silicon to become the dominant large area semiconductor and then point out how amorphous oxide semiconductors could displace a-Si in thin film transistors, and how phase change materials, such as GeSbTe alloys, have provided an optical storage technology and will provide a nonvolatile electrical storage technology based on their unique properties.

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30

Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (June 1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.

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31

Khutsishvili, Elza, Nodar Kekelidze, Tengiz Qamushadze, Zurab Chubinashvili, Nana Kobulashvili, and Georgy Kekelidze. "InPAs Alloys Use for Electrical Engineering in Hard-radiation Environment." European Journal of Engineering and Technology Research 6, no. 1 (January 6, 2021): 31–35. http://dx.doi.org/10.24018/ejers.2021.6.1.1749.

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Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations have been focused on InPxAs1-x alloys. Investigating of electrical and optical characteristics and physical processes, flowing in heavily irradiated InPxAs1-x alloys under high fluences of high-energy electrons and fast neutrons, let us create new generation of radiation-resistant semiconductor materials for electrical engineering application in hard-radiation environment.

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32

Khutsishvili, Elza, Nodar Kekelidze, Tengiz Qamushadze, Zurab Chubinashvili, Nana Kobulashvili, and Georgy Kekelidze. "InPAs Alloys Use for Electrical Engineering in Hard-radiation Environment." European Journal of Engineering and Technology Research 6, no. 1 (January 6, 2021): 31–35. http://dx.doi.org/10.24018/ejeng.2021.6.1.1749.

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Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations have been focused on InPxAs1-x alloys. Investigating of electrical and optical characteristics and physical processes, flowing in heavily irradiated InPxAs1-x alloys under high fluences of high-energy electrons and fast neutrons, let us create new generation of radiation-resistant semiconductor materials for electrical engineering application in hard-radiation environment.

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33

Murthy, Vedam Rama, Alla Srivani, and G. Veera raghavaiah. "Physical Studies in III-Nitride Semiconductor Alloys." International Journal of Thin Films Science and Technology 6, no. 1 (January 1, 2017): 15–27. http://dx.doi.org/10.18576/ijtfst/060103.

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34

Wei, Su-Huai, and Alex Zunger. "Negative spin-orbit bowing in semiconductor alloys." Physical Review B 39, no. 9 (March 15, 1989): 6279–82. http://dx.doi.org/10.1103/physrevb.39.6279.

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35

Cade, N. A. "Band bowing in semiconductor alloys and superlattices." Semiconductor Science and Technology 2, no. 5 (May 1, 1987): 255–60. http://dx.doi.org/10.1088/0268-1242/2/5/002.

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36

Seĭsyan, R. P., V. A. Kosobukin, and M. S. Markosov. "Excitons and polaritons in AlGaAs semiconductor alloys." Semiconductors 40, no. 11 (November 2006): 1287–96. http://dx.doi.org/10.1134/s1063782606110078.

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37

Zhao, Wei, and Debdeep Jena. "Dipole scattering in highly polar semiconductor alloys." Journal of Applied Physics 96, no. 4 (August 15, 2004): 2095–101. http://dx.doi.org/10.1063/1.1767615.

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38

Tongay, Sefaattin, Deepa S. Narang, Jun Kang, Wen Fan, Changhyun Ko, Alexander V. Luce, Kevin X. Wang, et al. "Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2." Applied Physics Letters 104, no. 1 (January 6, 2014): 012101. http://dx.doi.org/10.1063/1.4834358.

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39

Srivastava, G. P., José Luis Martins, and Alex Zunger. "Atomic structure and ordering in semiconductor alloys." Physical Review B 31, no. 4 (February 15, 1985): 2561–64. http://dx.doi.org/10.1103/physrevb.31.2561.

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40

Sandu, Titus, and Radu I. Iftimie. "Bandgaps and band bowing in semiconductor alloys." Solid State Communications 150, no. 17-18 (May 2010): 888–92. http://dx.doi.org/10.1016/j.ssc.2010.01.046.

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41

Grundmann, Marius, and Christof P. Dietrich. "Lineshape theory of photoluminescence from semiconductor alloys." Journal of Applied Physics 106, no. 12 (December 15, 2009): 123521. http://dx.doi.org/10.1063/1.3267875.

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42

Bernard, James E., and Alex Zunger. "Optical bowing in zinc chalcogenide semiconductor alloys." Physical Review B 34, no. 8 (October 15, 1986): 5992–95. http://dx.doi.org/10.1103/physrevb.34.5992.

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43

Salamanca-Young, L., S. Nahm, M. Wuttig, D. L. Partin, and J. Heremans. "Stability of group IV-VI semiconductor alloys." Physical Review B 39, no. 15 (May 15, 1989): 10995–1000. http://dx.doi.org/10.1103/physrevb.39.10995.

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44

Edwards, A. M., M. C. Fairbanks, R. J. Newport, and S. J. Gurman. "Structural studies of amorphous semiconductor-metal alloys." Vacuum 41, no. 4-6 (January 1990): 1335–38. http://dx.doi.org/10.1016/0042-207x(90)93950-n.

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45

Rodriguez, Garrett V., and Joanna M. Millunchick. "Predictive modeling of low solubility semiconductor alloys." Journal of Applied Physics 120, no. 12 (September 28, 2016): 125310. http://dx.doi.org/10.1063/1.4962849.

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46

Berding, M. A., A. Sher, A. ‐B Chen, and W. E. Miller. "Structural properties of bismuth‐bearing semiconductor alloys." Journal of Applied Physics 63, no. 1 (January 1988): 107–15. http://dx.doi.org/10.1063/1.340499.

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47

Caetano, Clóvis, Marcelo Marques, Luiz G. Ferreira, and Lara K. Teles. "Anomalous lattice parameter of magnetic semiconductor alloys." Applied Physics Letters 94, no. 24 (June 15, 2009): 241914. http://dx.doi.org/10.1063/1.3154560.

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48

Woicik, J. C., J. G. Pellegrino, B. Steiner, K. E. Miyano, S. G. Bompadre, L. B. Sorensen, T. L. Lee, and S. Khalid. "Bond-Length Distortions in Strained Semiconductor Alloys." Physical Review Letters 79, no. 25 (December 22, 1997): 5026–29. http://dx.doi.org/10.1103/physrevlett.79.5026.

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Stringfellow, G. B. "Atomic ordering in III/V semiconductor alloys." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 4 (July 1991): 2182. http://dx.doi.org/10.1116/1.585761.

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Navamathavan, R., D. Arivuoli, G. Attolini, C. Pelosi, and Chi Kyu Choi. "Mechanical properties of InAs/InP semiconductor alloys." Applied Surface Science 253, no. 5 (December 2006): 2657–61. http://dx.doi.org/10.1016/j.apsusc.2006.05.029.

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