Books on the topic 'Semiconductor alloys'

Chen, An-Ban, and Arden Sher, eds. Semiconductor Alloys. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0317-6.

Mascarenhas, Angelo, ed. Spontaneous Ordering in Semiconductor Alloys. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0631-7.

Mascarenhas, Angelo. Spontaneous Ordering in Semiconductor Alloys. Boston, MA: Springer US, 2002.

missing], [name. Spontaneous ordering in semiconductor alloys. New York, NY: Kluwer Academic/Plenum Publishers, 2003.

Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

Chen, An-Ban. Semiconductor alloys: Physics and materials engineering. New York: Plenum Press, 1995.

Chen, An-Ban. Semiconductor Alloys: Physics and Materials Engineering. Boston, MA: Springer US, 1996.

H, Sher Alvin, Chen A. -B, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Structural properties of bismuth-bearing semiconductor alloys. [Washington, D.C.?]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.

US/Japan Seminar on Alloy Semiconductor Physics and Electronics (1988 Hawaii). Alloy semiconductor physics and electronics: Proceedings of US/Japan Seminar on Alloy Semiconductor Physics and Electronics, Hawaii, 25-27 October 1988. Amsterdam: Elsevier Science Pub. Co., 1989.

Joachim, Piprek, ed. Nitride semiconductor devices: Principles and simulation. Weinheim: Wiley-VCH, 2007.

Nitride semiconductor devices: Fundamentals and applications. Weinheim, Germany: Wiley-VCH, 2013.

Morkoç, Hadis. Handbook of nitride semiconductors and devices. Weinheim: Wiley-VCH, 2008.

United States. National Aeronautics and Space Administration., ed. Electronic and total energy properties of ternary and quarternary semiconductor compounds, alloys and superlattices. [Washington, DC]: National Aeronautics and Space Administration, 1992.

Tan, A. C. Tin and solder plating in the semiconductor industry: A technical guide. London: Chapman & Hall, 1993.

B, Carlin Donald, Ettenberg Michael, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., eds. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Division, 1989.

Connolly, J. C. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications. Hampton, Va: Langley Research Center, 1989.

B, Carlin Donald, Ettenberg Michael, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., eds. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Division, 1989.

Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

Bell, L. D. Evidence of momentum conservation at a nonepitaxial metal/semiconductor interface using ballistic electron emission microscopy. [Washington, DC: National Aeronautics and Space Administration, 1996.

Morkoç, Hadis. Nitride Semiconductors and Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999.

1950-, Adachi Sadao, ed. Properties of group-IV, III-V and II-VI semiconductors. Chichester, England: John Wiley & Sons, 2005.

Properties of aluminum gallium arsenide. London, United Kingdom: The Institution of Engineering and Technology, 2006.

Adachi, Sadao. Properties of Semiconductor Alloys. Wiley & Sons, Incorporated, John, 2009.

Statistical Thermodynamics of Semiconductor Alloys. Elsevier, 2016. http://dx.doi.org/10.1016/c2015-0-00997-2.

Mascarenhas, Angelo. Spontaneous Ordering in Semiconductor Alloys. Springer, 2002.

Elyukhin, Vyacheslav A. Statistical Thermodynamics of Semiconductor Alloys. Elsevier, 2015.

Mascarenhas, Angelo. Spontaneous Ordering in Semiconductor Alloys. Springer, 2012.

Statistical Thermodynamics of Semiconductor Alloys. Elsevier Science & Technology Books, 2016.

Spontaneous Ordering in Semiconductor Alloys. Springer, 2012.

Mascarenhas, Angelo. Spontaneous Composition Modulation in Semiconductor Alloys. Wiley & Sons, Incorporated, John, 2002.

Chen, An-Ben. Semiconductor Alloys: Physics And Materials Engineering. Springer, 2011.

Capper, Peter, Safa Kasap, Sadao Adachi, and Arthur Willoughby. Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. Wiley & Sons, Limited, John, 2009.

Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. Wiley & Sons, Incorporated, John, 2009.

Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2019.

Chen, An-Ben, and Arden Sher. Semiconductor Alloys: Physics and Materials Engineering (Microdevices). Springer, 1995.

Tomashyk, Vasyl. Multinary Alloys Based on II-VI Semiconductors. Taylor & Francis Group, 2015.

Multinary Alloys Based on II-VI Semiconductors. Taylor & Francis Group, 2015.

Tomashyk, Vasyl. Multinary Alloys Based on Ii-Vi Semiconductors. Taylor & Francis Group, 2019.

Ternary Alloys Based on II-VI Semiconductor Compounds. Taylor & Francis Group, 2013.

Tomashyk, Vasyl, Petro Feychuk, and Larysa Shcherbak. Ternary Alloys Based on II-VI Semiconductor Compounds. Taylor & Francis Group, 2013.

Tomashyk, Vasyl, Petro Feychuk, and Larysa Shcherbak. Ternary Alloys Based on II-VI Semiconductor Compounds. Taylor & Francis Group, 2013.

Tomashyk, Vasyl, Petro Feychuk, and Larysa Shcherbak. Ternary Alloys Based on II-VI Semiconductor Compounds. Taylor & Francis Group, 2019.

Joyce, Bruce, Angelo Mascarenhas, David Follstaedt, and Tohru Suzuki. Self-Organized Processes in Semiconductor Alloys: Volume 583. University of Cambridge ESOL Examinations, 2014.

Tomashyk, Vasyl, Petro Feychuk, and Larysa Shcherbak. Ternary Alloys Based on II-VI Semiconductor Compounds. Taylor & Francis Group, 2013.

Piprek, Joachim. Nitride Semiconductor Devices: Principles and Simulation. Wiley & Sons, Incorporated, John, 2007.