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Relevant bibliographies by topics / Semiconductor alloys

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Academic literature on the topic 'Semiconductor alloys'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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Journal articles on the topic "Semiconductor alloys"

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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (October 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

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Stringfellow, G. B. "Order and Surface Processes in III-V Semiconductor Alloys." MRS Bulletin 22, no. 7 (July 1997): 27–32. http://dx.doi.org/10.1557/s0883769400033376.

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Semiconductor alloys have become increasingly useful during the last four decades because, through the use of alloys, the properties of semiconductors can be tailored by varying the composition to precisely match the requirements for specific electronic and photonic devices. In addition the use of alloys allows the production of special structures, such as quantum wells, that require rapid changes in bandgap energy during growth. This has led to so-called “bandgap engineering,” in which device designers and epitaxial growers are working together to produce structures having virtually atomic-scale dimensions.

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ONABE, Kentaro. "Compound semiconductor alloys." Nihon Kessho Gakkaishi 28, no. 2 (1986): 114–23. http://dx.doi.org/10.5940/jcrsj.28.114.

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Melrose, J. R. "Alloy scattering with correlation in semiconductor alloys." Semiconductor Science and Technology 2, no. 6 (June 1, 1987): 371–77. http://dx.doi.org/10.1088/0268-1242/2/6/009.

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Bernard, J. E. "Ordering in Semiconductor Alloys." Materials Science Forum 155-156 (May 1994): 131–48. http://dx.doi.org/10.4028/www.scientific.net/msf.155-156.131.

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Bernard, J. E., R. G. Dandrea, L. G. Ferreira, S. Froyen, S. ‐H Wei, and A. Zunger. "Ordering in semiconductor alloys." Applied Physics Letters 56, no. 8 (February 19, 1990): 731–33. http://dx.doi.org/10.1063/1.102695.

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Martins, José Luís, and Alex Zunger. "Ordering and decomposition in semiconductor alloys." Journal of Materials Research 1, no. 4 (August 1986): 523–26. http://dx.doi.org/10.1557/jmr.1986.0523.

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The stability of ordered semiconductor alloys has been studied, using total energy pseudopotential calculations. The ordered alloys are found to be stabilized with respect to disordered alloys via reduction of the internal strain and by chemical interactions. The Si–C and Si–Ge systems are used as illustrations, finding that ordered Six Ge1−x should be a metastable alloy, in agreement with experimental observations.

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Huang, Haishen, Kun Yang, Wan Zhao, Tingyan Zhou, Xiude Yang, and Bo Wu. "High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P)." Applied Sciences 9, no. 14 (July 18, 2019): 2859. http://dx.doi.org/10.3390/app9142859.

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In this paper, the structure and the electronic and magnetic properties of VFeScZ (Z = Sb, As, P) series alloys are systematically studied based on the Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation (GGA) calculation within the first-principles density functional theory. The results showed that VFeScSb and VFeScP are ferromagnetic semiconductors and VFeScAs exhibits half-metallic ferromagnetism under zero pressure. As the pressure increases, the narrow indirect gap of VFeScZ (Z = Sb, As, P) alloy gradually decreases, and gets close to zero, leading to spin gapless semiconductor (SGS) transition. The pressure phase transition point of VFeScSb, VFeScAs, and VFeScP alloy is 132 GPa, 58 GPa, and 32 GPa, respectively. As a result, the pressure effect provides an opportunity to tune the electronic properties of the alloys by external pressure. The present findings provide a technical method for us to actually use the Heusler alloy SGS.

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Kim, In Yea, Gi hwan Lim, Chae Yoon Kim, Min-Jeong Lee, Jaehun Kim, Dong Hyun Kim, and Jae-Hong Lim. "Fabrication and Characterization of Conductive FeCo@Au Nanowire Alloys for Semiconductor Connector." ECS Meeting Abstracts MA2022-02, no. 17 (October 9, 2022): 856. http://dx.doi.org/10.1149/ma2022-0217856mtgabs.

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A semiconductor test socket is one of the essential components for final electrical and performance testing of semiconductors. Due to the miniaturization of semiconductors, fine pinching of test sockets is required, so research on connectors for semiconductor inspection capable of fine processing is being actively conducted. The connector for semiconductor inspection consists of a powder coated with conductive powder on a magnetic material and rubber, and an electrical signal is transmitted through the conductive powder. A finer pitch rubber test socket shall maintain the electrical characteristics (resistance) at the same level, even though a smaller conductive path is formed as the gap between conductive paths narrows to respond to the increase in demand for fine pitch products. Therefore, in this study, a technique for forming a conductive pathway between conductive powders to maintain the electrical properties of a semiconductor socket for fine pitch is introduced. In order to effectively improve a thin conductive path, a conductive nanowire was prepared to form a conductive pathway between conductive powders. Fig. 1 shows the schematic diagram for the fabrication of FeCo nanowires. FeCo nanowires were synthesized through electroplating using AAO (Anodic Aluminum Oxide) as a template, and Au as a conductive material was coated on the surface of FeCo wires through an electrochemical method to synthesize FeCo@Au. To uniformly coat Au on the surface of the FeCo wire during the coating process, sonication, vortex, and stay three methods were compared, as shown in Fig. 2. As a result of confirming the surface shape by SEM, the most uniform method was confirmed by the vortex method. In addition, the magnetic properties of FeCo@Au synthesized with a smooth surface were analyzed through VMS (Vibrating Sample Magnetometer). As a result, it can be confirmed that alignment through magnetism is possible. From these results, it was confirmed that the method of increasing the electrical conductivity by adding a wire to reduce resistance of semiconductor connector. Figure 1

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Ling, M. F., and D. J. Miller. "Band structure of semiconductor alloys." Physical Review B 38, no. 9 (September 15, 1988): 6113–19. http://dx.doi.org/10.1103/physrevb.38.6113.

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Dissertations / Theses on the topic "Semiconductor alloys"

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Quintero, Miguel A. "Investigation of some chalcopyrite semiconductor alloys." Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4787.

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Unsworth, Paul. "Spectroscopic studies of metal alloys and semiconductor interfaces." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343647.

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Cheng, Siu F. "Metalorganic vapor-phase epitaxy of compound semiconductor Alloys." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1495961311&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Farahmand, Maziar. "Advanced simulation of wide band gap semiconductor devices." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14777.

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Broomfield, Seth Emlyn. "Picosecond optical studies of solids." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253303.

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Yelgel, Ovgu Ceyda. "Thermoelectric properties of V-VI semiconductor alloys and nanocomposites." Thesis, University of Exeter, 2013. http://hdl.handle.net/10871/14110.

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Thermoelectric materials are materials which are capable of converting heat directly into electricity and vice versa. They have long been used in electric power generation and solid-state cooling. The performance of a thermoelectric device determined by the dimensionless figure of merit (ZT) of the material, defined as ZT = (S2 σ/κ)T, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. The total thermal conductivity consists of contribution from electrons, electron-hole pairs and phonons. Since the 1960s, the best thermoelectric material has been Bi2Te3 alloys, with a ZT of 1.0 at room temperature. In recent years, the idea of using nanotechnology has opened up the possibility of engineering materials at nanoscale dimensions to achieve higher values of ZT in other words to have more efficient thermoelectric devices. This thesis starts with a broad introduction to thermoelectricity including various thermoelectric effects and their applications. The state-of-the-art thermoelectric materials and the optimisation methods to enhance the value of ZT have also been reviewed. A systematic theoretical modelling of the thermoelectric properties of three dimensional bulk semiconductors has been presented in Chapter 2. Electronic properties (Fermi level, Seebeck coefficient, and electrical resistivity) and thermal conductivity contribution from carriers (donor electrons or acceptor holes) have been derived by using the nearly-free electron approximation and the Fermi-Dirac statistics. Other thermal conductivity contributions originated from electron-hole pairs and phonons have also been described in detail. In Chapter 3, this theoretical study is extended to two dimensional semiconducting quantum well structures bearing in mind that the Fermi level should change with the temperature as well as the quantum well width and additional interface scattering mechanisms (interface mass-mixing and interface dislocation scatterings) should be included for the definition of anharmonic scattering rate. Thermoelectric properties of n-type (Bi2Te3)0.85(Bi2Se3)0.15 single crystals doped with 0.1 wt.% CuBr and 0.2 wt.% SbI3 and p-type (Bi2Te3)x(Sb2Te3)1−x single crystals doped with 3 wt.% Te (0.18 ≤ x ≤ 0.26) have been explored in Chapter 4 and 5, respectively. It has been found that p-type Bi2Te3 based alloys showed higher values of ZT due to their larger power factor (S2σ) and smaller thermal conductivity values. These calculations have concluded that the influence of the composition range of semiconductor alloys together with its type and amount of dopant plays an important role in enhancing the ZT. In Chapter 6, a detailed theoretical investigation and comparision of the thermal conductivities of these single crystals have been reported including frequency dependence of the phonon thermal conductivity for different temperatures. In Chapter 7, based on temperature and well width dependent Fermi level, a full theory of thermoelectric properties has been investigated for n-type 0.1 wt.% CuBr doped Bi2Se3/Bi2Te3/Bi2Se3 and p-type 3 wt.% Te doped Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems. Different values of well thicknesses have been considered for both types of quantum well systems to study the effect of confinement on all thermoelectric transport coefficients. It has been found that reducing the well thickness has a pronounced effect on enhancing the ZT. Compared to bulk single crystals studied in Chapter 4 and 5, significantly higher thermoelectric figure of merits have been estimated theoretically for both n- and p-type semiconducting quantum well systems. For the n-type Bi2Se3/Bi2Te3/Bi2Se3 quantum well system with taking 7 nm well width the maximum value of ZT has been estimated to be 0.97 at 350 K and for the p-type Sb2Te3/Bi2Te3/Sb2Te3 quantum well with well width 10 nm the highest value of the ZT has been found to be 1.945 at 440 K. Chapter 8 briefly recapitulates the results presented in this thesis and outlines possibilities for future work.

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Bulbul, Mahir Mehmet. "Raman spectroscopy of GaN epilayers and InGaAlAs quaternary semiconductor alloys." Thesis, University of Essex, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242232.

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Roberts, Victoria. "The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.

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Gateru, Robert Gitumbo. "Memory switching in ion bombarded hydrogenated amorphous silicon alloys." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/842936/.

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Electrical, forming and switching characteristics of metal-semiconductor-metal (MSM) memory switches of ion bombarded hydrogenated amorphous silicon (a-Si:H) and its alloys are presented. MSM devices for memory switching applications are known to be characterised by instabilities as well as non-uniformity and irreproducibility of the forming and switching characteristics. It is believed that the presence of defect states in the semiconductor layer plays a significant role in the observation of memory switching in these MSM devices. Gas-phase doping and current stressing of the semiconductor are some of the techniques that have been used in the past to introduce mid-gap defect states. In this work, we use for the first time, ion bombardment as a novel tool for defect introduction into the semiconductor material of the MSM devices and we compare the electrical, forming and switching characteristics of these devices to those fabricated using the previous techniques mentioned above. A significant observation is that as the density of defects is increased in the semiconductor film with increasing implantation dose, conduction in the devices changes from barrier-controlled thermionic emission to bulk controlled where carriers hop through the defect states in a Poole-Frenkel manner. This transformation eliminates problems associated with Schottky barriers such as quality of contacts, oxidation, etc. In the forming characteristics, not only do we report enhanced uniformity of the forming voltages (VF) but also the magnitude of VF is observed to vary systematically with the implantation dose used. The ON states and switching characteristics in the bombarded devices are also observed to be much more stable presumably as a result of the uniformity of the defects introduced by ion bombardment. We report also an enhanced switching ratio in the ion bombarded devices, especially after partial annealing of the bombardment induced Si dangling bond defects.

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Radulescu, Fabian. "Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge : a microstructure study /." Full text open access at:, 2000. http://content.ohsu.edu/u?/etd,226.

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Books on the topic "Semiconductor alloys"

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Chen, An-Ban, and Arden Sher, eds. Semiconductor Alloys. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0317-6.

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Mascarenhas, Angelo, ed. Spontaneous Ordering in Semiconductor Alloys. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0631-7.

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Mascarenhas, Angelo. Spontaneous Ordering in Semiconductor Alloys. Boston, MA: Springer US, 2002.

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missing], [name. Spontaneous ordering in semiconductor alloys. New York, NY: Kluwer Academic/Plenum Publishers, 2003.

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Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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Chen, An-Ban. Semiconductor alloys: Physics and materials engineering. New York: Plenum Press, 1995.

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Chen, An-Ban. Semiconductor Alloys: Physics and Materials Engineering. Boston, MA: Springer US, 1996.

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H, Sher Alvin, Chen A. -B, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Structural properties of bismuth-bearing semiconductor alloys. [Washington, D.C.?]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.

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US/Japan Seminar on Alloy Semiconductor Physics and Electronics (1988 Hawaii). Alloy semiconductor physics and electronics: Proceedings of US/Japan Seminar on Alloy Semiconductor Physics and Electronics, Hawaii, 25-27 October 1988. Amsterdam: Elsevier Science Pub. Co., 1989.

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Book chapters on the topic "Semiconductor alloys"

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Chen, An-Ban, and Arden Sher. "Crystal Structures." In Semiconductor Alloys, 1–20. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_1.

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Chen, An-Ban, and Arden Sher. "Bonding in Ordered Structures." In Semiconductor Alloys, 21–40. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_2.

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Chen, An-Ban, and Arden Sher. "Elasticity." In Semiconductor Alloys, 41–65. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_3.

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Chen, An-Ban, and Arden Sher. "Alloy Statistics and Phase Diagrams." In Semiconductor Alloys, 67–121. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_4.

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Chen, An-Ban, and Arden Sher. "Band Structure Theory." In Semiconductor Alloys, 123–73. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_5.

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Chen, An-Ban, and Arden Sher. "Transport." In Semiconductor Alloys, 175–231. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_6.

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Chen, An-Ban, and Arden Sher. "Band Structures of Selected Semiconductors and Their Alloys." In Semiconductor Alloys, 233–331. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_7.

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Chen, An-Ban, and Arden Sher. "Problems." In Semiconductor Alloys, 333–40. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-0317-6_8.

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Mascarenhas, Angelo, Hyeonsik M. Cheong, M. J. Seong, and Francesc Alsina. "Phonons in Ordered Semiconductor Alloys." In Spontaneous Ordering in Semiconductor Alloys, 391–422. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0631-7_14.

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Gaspard, J. P., C. Bichara, A. Pellegatti, R. Céolin, and R. Bellissent. "Melting of Elemental and Compound Semiconductors: A Semiconductor-Metal Transition?" In Metallic Alloys: Experimental and Theoretical Perspectives, 129–38. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1092-1_15.

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Conference papers on the topic "Semiconductor alloys"

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Madan, Arun. "Amorphous Semiconductor Alloys." In 1985 Technical Symposium East, edited by Satyen K. Deb. SPIE, 1985. http://dx.doi.org/10.1117/12.948200.

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Jones, Eric D., and L. Ralph Dawson. "Photoluminescence Studies Of InGaAlAs Quaternary Alloys." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947428.

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Drummond, T. J., E. D. Jones, H. P. Hjalmarson, and B. L. Doyle. "Growth And Characterization Of GaAs/AlAs Superlattice Alloys." In Semiconductor Conferences, edited by Robert L. Gunshor and Hadis Morkoc. SPIE, 1987. http://dx.doi.org/10.1117/12.940988.

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Bajaj, K. K., and D. C. Reynolds. "An Overview Of Optical Characterization Of Semiconductor Structures And Alloys." In Semiconductor Conferences, edited by Orest J. Glembocki, Fred H. Pollak, and Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940884.

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El-Masry, N. A. "Ordered-disordered ternary III-V semiconductor alloys." In Semiconductors '92, edited by Roger J. Malik, Chris J. Palmstrom, Salah M. Bedair, Harold G. Craighead, and Randall L. Kubena. SPIE, 1992. http://dx.doi.org/10.1117/12.137642.

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Huang, Changhe, Zhenzhong Yu, and Dingyuan Tang. "Optical Absorption In Low P-Type Hg 0.8 Cd 0.2 Te Alloys." In Semiconductor Conferences, edited by Sayan D. Mukherjee. SPIE, 1987. http://dx.doi.org/10.1117/12.941039.

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El-Jaroudi, Rasha H., Kyle M. McNicholas, Brent A. Bouslog, Iram E. Olivares, Rachel C. White, Joshua A. McArthur, and Seth R. Bank. "Boron Alloys for GaAs-based 1.3μm Semiconductor Lasers." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_si.2019.sth4o.7.

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Sweeney, Stephen J. "Bismide-alloys for higher efficiency infrared semiconductor lasers." In 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC). IEEE, 2010. http://dx.doi.org/10.1109/islc.2010.5642728.

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Zhang, Jing, Hua Tong, Juan A. Herbsommer, and Nelson Tansu. "Analysis of thermoelectric properties of AlInN semiconductor alloys." In SPIE OPTO, edited by Bernd Witzigmann, Fritz Henneberger, Yasuhiko Arakawa, and Alexandre Freundlich. SPIE, 2011. http://dx.doi.org/10.1117/12.875995.

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Léonard, François. "Optoelectronics in two-dimensional semiconductor alloys (Presentation Recording)." In SPIE Nanoscience + Engineering, edited by Nobuhiko P. Kobayashi, A. Alec Talin, M. Saif Islam, and Albert V. Davydov. SPIE, 2015. http://dx.doi.org/10.1117/12.2190303.

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Reports on the topic "Semiconductor alloys"

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Sher, A., M. van Schilfgaarde, A. B. Chen, and M. Berding. Fracture and Hardness of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, November 1986. http://dx.doi.org/10.21236/ada176800.

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Wu, Junqiao. Band anticrossing effects in highly mismatched semiconductor alloys. Office of Scientific and Technical Information (OSTI), January 2002. http://dx.doi.org/10.2172/806122.

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Wright, Alan F., Normand A. Modine, Stephen R. Lee, and Stephen M. Foiles. Compact Models for Defect Diffusivity in Semiconductor Alloys. Office of Scientific and Technical Information (OSTI), September 2017. http://dx.doi.org/10.2172/1395644.

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Stevenson, D. A. CrystaL Growth and Mechanical Properties of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, April 1988. http://dx.doi.org/10.21236/ada198153.

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Stevenson, David A. Crystal Growth and Mechanical Properties of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, November 1989. http://dx.doi.org/10.21236/ada216697.

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Lambrecht, Walter R. Modeling of Wide Band Gap Semiconductor Alloys and Related Topics. Fort Belvoir, VA: Defense Technical Information Center, August 2000. http://dx.doi.org/10.21236/ada389496.

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Billinge, S. J. L., and M. F. Thorpe. Local Atomic Structure of Semiconductor Alloys Using Pair Distribution Function Analysis. Office of Scientific and Technical Information (OSTI), June 2002. http://dx.doi.org/10.2172/795601.

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Ding, Yungui. Theoretical study of the noble metals on semiconductor surfaces and Ti-base shape memory alloys. Office of Scientific and Technical Information (OSTI), July 1994. http://dx.doi.org/10.2172/10189837.

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Hunt, Will, Saif Khan, and Dahlia Peterson. China’s Progress in Semiconductor Manufacturing Equipment. Center for Security and Emerging Technology, March 2021. http://dx.doi.org/10.51593/20190018.

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To reduce its dependence on the United States and its allies for semiconductors, China is building domestic semiconductor manufacturing facilities by importing U.S., Japanese, and Dutch semiconductor manufacturing equipment. In the longer term, it also hopes to indigenize this equipment to replace imports. U.S. and allied policy responses to China’s efforts will significantly affect its prospects for success in this challenging task.

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Khan, Saif M., Alexander Mann, and Dahlia Peterson. The Semiconductor Supply Chain: Assessing National Competitiveness. Center for Security and Emerging Technology, January 2021. http://dx.doi.org/10.51593/20190016.

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Semiconductors are a key component in fueling scientific progress, promoting economic advancement, and ensuring national security. This issue brief summarizes each component of the semiconductor supply chain and where the United States and its allies possess the greatest leverage. A related policy brief, “Securing Semiconductor Supply Chains,” recommends policy actions to ensure the United States maintains this leverage and uses it to promote the beneficial use of emerging technologies, such as artificial intelligence.

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