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Journal articles on the topic 'RF sputtering'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 March 2023

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1

Yokogawa, Yoshiyuki, Taishi Morishima, Mitunori Uno, Masakazu Kurachi, Yutaka Doi, Harumi Kawaki, and Masato Hotta. "Wettability and Durability of Si-O Coatings on Zirconia Substrate by RF-Magnetron Plasma Sputtering." Key Engineering Materials 782 (October 2018): 189–94. http://dx.doi.org/10.4028/www.scientific.net/kem.782.189.

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The wettability and durability of Si-O coatings prepared on zirconia substrate using radiofrequency magnetron sputtering (rf-sputtering) was studied. XRD analysis revealed no phase transformation of zirconia before/after rf-sputtering process. XPS spectroscopy showed that as-deposited films with a SiO2configuration was formed. EDX analysis indicated that the Si/Zr ratio was high and when magnetron rf-sputtering was performed using a plasma gas Ar+5% O2, which may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate. The wear testing using pin on disc wear apparatus was performed. The wettability and durability of Si-O coatings fabricated by magnetron radiofrequency magnetron sputtering (rf-sputtering) on zirconia substrate was studied. A plasma gas Ar+5% O2may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate

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2

Park, Min Woo, Wang Woo Lee, Jae Gab Lee, and Chong Mu Lee. "A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films." Materials Science Forum 546-549 (May 2007): 1695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1695.

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Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.

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3

Zhao, Haili, Jingpei Xie, and Aixia Mao. "Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering." Applied Sciences 9, no. 7 (April 3, 2019): 1395. http://dx.doi.org/10.3390/app9071395.

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Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.

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4

Biederman, H., P. Bílková, J. Ježek, P. Hlídek, and D. Slavínská. "RF magnetron sputtering of polymers." Journal of Non-Crystalline Solids 218 (September 1997): 44–49. http://dx.doi.org/10.1016/s0022-3093(97)00196-8.

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5

Stelmashuk, V., H. Biederman, D. Slavı́nská, M. Trchová, and P. Hlidek. "Rf magnetron sputtering of polypropylene." Vacuum 75, no. 3 (July 2004): 207–15. http://dx.doi.org/10.1016/j.vacuum.2004.02.007.

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6

Morohashi, Shin'ichi, Atsunori Matsuo, Toshihiro Hara, Shogo Tsujimura, and Masanori Kawanishi. "SiO2Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering." Japanese Journal of Applied Physics 40, Part 1, No. 8 (August 15, 2001): 4876–77. http://dx.doi.org/10.1143/jjap.40.4876.

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7

Ma, Wei Hong, and Chang Long Cai. "Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering." Advanced Materials Research 415-417 (December 2011): 1921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1921.

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Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.

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8

Jin, Chun Long, Ha Na Shim, Eou Sik Cho, and Sang Jik Kwon. "Effect of Pulsed-DC Power on the Zinc Oxide Window Layer of CIGS Solar Cells Deposited by In-Line Sputtering Methods." Advanced Materials Research 805-806 (September 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.131.

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Zinc oxide (ZnO) thin film was deposited on the glass substrate and cadmium-sulfide (CdS) thin film at room temperature by using an in-line pulsed-DC magnetron sputtering system. The sputtering process was carried out at various pulsed-DC power and radio frequency (RF) power from 400 W to 1 kW. From the thickness of the sputtered ZnO films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, for both pulsed-DC sputtered and RF sputtered ZnO films, the similar results were obtained in case of the energy band gaps and the structural characteristics such as adhesion to CdS. From the results, the ZnO films sputtered by pulsed-DC power are expected to be used in the fabrication process instead of RF power.

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9

Lee, Chong Mu, Choong Mo Kim, Sook Joo Kim, and Yun Kyu Park. "Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering." Key Engineering Materials 336-338 (April 2007): 581–84. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.581.

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ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.

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10

Watazu, Akira, Katsuhiko Kimoto, Sonoda Tsutomu, Kinya Tanaka, Tomoji Sawada, Minoru Toyoda, and Naobumi Saito. "Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets." Materials Science Forum 544-545 (May 2007): 495–98. http://dx.doi.org/10.4028/www.scientific.net/msf.544-545.495.

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Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

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11

Xiu, Xian Wu, Li Xu, and Cheng Qiang Zhang. "Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering." Advanced Materials Research 873 (December 2013): 426–30. http://dx.doi.org/10.4028/www.scientific.net/amr.873.426.

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Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

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12

Fribourg-Blanc, E., E. Cattan, D. Remiens, M. Dupont, and D. Osmont. "rf-sputtering of PMNT thin films." Le Journal de Physique IV 11, PR11 (December 2001): Pr11–145—Pr11–149. http://dx.doi.org/10.1051/jp4:20011123.

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13

Koenig, H. R., and L. I. Maissel. "Application of rf discharges to sputtering." IBM Journal of Research and Development 44, no. 1.2 (January 2000): 106–10. http://dx.doi.org/10.1147/rd.441.0106.

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14

Nomura, Ichirou, Takayuki Miyazaki, and Takeo Nishimura. "Novel method in rf bias sputtering." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, no. 1-4 (March 1989): 99–103. http://dx.doi.org/10.1016/0168-583x(89)90749-0.

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15

Wen, Dong Cherng, Chun Yao Hsu, and Chun Yuan Wu. "Effect of Sputtering Parameters on Photocatalytic Activity of Anatase TiO₂ Films Deposited at Room Temperature." Advanced Materials Research 518-523 (May 2012): 724–27. http://dx.doi.org/10.4028/www.scientific.net/amr.518-523.724.

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We have successfully deposited anatase TiO2thin films at room temperature on polycarbonate substrates by RF magnetron sputtering. Four deposition parameters including RF power, sputtering pressure, argon/oxygen ratio and deposition time were employed to realize the photocatalytic activities of TiO2films. The orthogonal array and analysis of variance (ANOVA) were adopted to determine the performance of the deposition process. The RF power was found to be the major factor affecting the photocatalytic properties. An increase in RF power could be improved the deposition rate, contact angle, and MB absorbance.

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16

Khalaf, Mohammed K. "Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films." Iraqi Journal of Physics (IJP) 15, no. 33 (January 8, 2019): 71–77. http://dx.doi.org/10.30723/ijp.v15i33.142.

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Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

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17

Zhao, Zhenqian, Min Yu Yin, Sang Jik Kwon, and Eou-Sik Cho. "Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS2 Thin Films on Soda-Lime Glass Substrates." Journal of Nanoscience and Nanotechnology 20, no. 8 (August 1, 2020): 4892–98. http://dx.doi.org/10.1166/jnn.2020.17849.

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For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS2 layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS2 layers sputtered at lower RF powers.

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18

Ni, Zegang, Yuan Zhong, Xingfu Tao, Wei Li, Huifang Gao, and Yan Yao. "Effects of Radio Frequency Bias on the Structure Parameters and Mechanical Properties of Magnetron-Sputtered Nb Films." Crystals 12, no. 2 (February 14, 2022): 256. http://dx.doi.org/10.3390/cryst12020256.

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Due to its highly unreactive nature and advanced biocompatibility, niobium (Nb) coating films are increasingly being used to improve the corrosion resistance and biocompatibility of base implant materials. However, Nb films have relatively low yield strengths and surface hardness; therefore, it is necessary to explore a simple and low-cost method to improve their mechanical properties. Magnetron sputtering is a commonly used tool for Nb film deposition. Applying substrate bias can introduce Ar+ bombard to the film surface, which is effective to improve the film’s mechanical properties. As the direct current (DC) bias-sputtering tool requires an extra DC power supply, applying the negative bias by a radio frequency (RF) power source (usually installed in the sputtering system to conduct substrate pre-cleaning) will be more economical and convenient. Moreover, the RF bias was accompanied with higher ion density and energy compared to the DC bias. In this study, Nb films were deposited on silicon wafers by magnetron sputtering under different RF bias powers. The effects of the RF bias on the structural parameters and mechanical properties of the films were studied via stress measurements, X-ray diffraction, and indentation tests. The results show that the RF bias can change the crystal distribution, grain size, and lattice parameter of the film, as well as the mechanical properties. The stress of the Nb film was compressive; it increased markedly when an RF power was applied and saturated when the RF power was over 40 W. The hardness of the film increased from 4.17 GPa to 5.34 GPa with an elevating RF power from 0 W to 60 W. This study aimed to enhance the mechanical properties of the Nb films deposited by RF-biased sputtering, which provides wider potentials for Nb film as protective coatings for medical–biological implant bodies. Although the research was carried out on Si substrates to facilitate the study of film stress, we believe that the evolution trends of our results will also apply to other metal substrates, because the measured film mechanical properties are intrinsic.

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19

NOIKAEW, Busarin, Laksana WANGMOOKLANG, Saisamorn NIYOMSOAN, and Siriporn LARPKIATTAWORN. "Preparation of transparent alumina thin films deposited by RF magnetron sputtering." Journal of Metals, Materials and Minerals 31, no. 2 (June 27, 2021): 96–103. http://dx.doi.org/10.55713/jmmm.v31i2.1066.

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Alumina (Al2O3) thin films were prepared by RF magnetron sputtering technique using Al2O3 ceramic target. Effects of sputtering powers and oxygen gas mixtures were investigated and the optimized coating condition was applied on semi-precious gemstones. RF sputtering powers were varied to optimize the transparency of the films. Besides, the oxygen gas mixtures were also studied at the optimized sputtering power with a constant sputtering pressure. Optical and physical properties of the thin films were investigated using UV-Vis Spectrophotometer, FESEM, XRF, GIXRD, XRR including a microscratch tester. The Al2O3 films were highly transparent in the visible region in form of an amorphous phase with granular structure of the surface morphology. Thickness of the films decreased significantly with an introduction of the oxygen gas in the sputtering process but slowly decreased with further addition of the oxygen gas. Density of the film changed linearly with the variation of the oxygen gas mixtures. The semi-precious gemstones gained higher scratch resistance after the Al2O3 thin films coating. To enhance the scratch resistance and maintain the aesthetic appearance of the semi-precious gemstones, the most optimum deposition condition for the Al2O3 thin film coating was determined for the RF magnetron sputtering technique at room temperature.

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20

Liu, Jiaqi, Kazuya Tajima, Imane Abdellaoui, Muhammad Monirul Islam, Shigeru Ikeda, and Takeaki Sakurai. "Effect of Radio-Frequency Power on the Composition of BiVO4 Thin-Film Photoanodes Sputtered from a Single Target." Energies 14, no. 8 (April 10, 2021): 2122. http://dx.doi.org/10.3390/en14082122.

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BiVO4 films were fabricated by radio frequency (RF) sputtering from a single target. The deposited BiVO4 films were found to be rich in Bi, and the reason for the Bi-richness was investigated. It was inferred from the Monte Carlo simulation that, during sputtering, the transfer process of target atoms through argon gas played a major role in this phenomenon. The transfer process resulted in an imbalanced ratio of Bi and V, arising from the difference in atom mass and interaction radius. The high RF power was found to be effective in adjusting the Bi/V ratio, influencing the sputtering yield. This type of preferential sputtering was maintained by the diffusion of target atoms from the bulk to the surface. BiVO4 films with monoclinic scheelite crystal structures were obtained at high RF power values and found to exhibit photocatalytic performances beneficial for photoanodic applications.

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21

Huguenin-Love, James, Noel T. Lauer, Rodney J. Soukup, Ned J. Ianno, Štepan Kment, and Zdenek Hubička. "The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode." Materials Science Forum 645-648 (April 2010): 131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.131.

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Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

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22

Jeon, Yong-Su, Yeo-Chun Yun, and Seong-Su Kim. "Microstructure and Electrical Properties of In2O3Thin Films Fabricated by RF Magnetron Sputtering." Korean Journal of Materials Research 12, no. 4 (April 1, 2002): 290–95. http://dx.doi.org/10.3740/mrsk.2002.12.4.290.

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23

Yao, Yan Ping, and Bao Xue Bo. "Composition Study of Amorphous In_xAs_1-x Films Prepared by Radio-Frequency Sputtering." Applied Mechanics and Materials 568-570 (June 2014): 1653–57. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1653.

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Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-InAs) films have been achieved at higher working pressure when the substrate temperature and RF power are increased respectively. The films composition is controlled by transport phenomena of sputtered atoms from the target to the substrate and by substrate surface dynamics. We study how to improve the sputtering parameters in order to obtain stoichiometric a-InAs films.

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24

Park, Sang-Shik. "Preparation and Electrical Properties of BiFeO3Films by RF Magnetron Sputtering." Korean Journal of Materials Research 19, no. 5 (May 27, 2009): 253–58. http://dx.doi.org/10.3740/mrsk.2009.19.5.253.

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25

Xu, Li Hai, Yu Xing Xu, Cong Wang, and Tian Min Wang. "Preparation and Properties of Ce_0.9Sm_0.1O_1.95 as the Electrolytes of IT-SOFC." Key Engineering Materials 336-338 (April 2007): 398–400. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.398.

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Sm0.1Ce0.9O1.95 (SDC) films, as promising electrolyte materials, have been successfully prepared on Al2O3 ceramic substrates by RF magnetron sputtering growth. The relationship between sputtering parameters and film microstructure was discussed. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the morphology and crystal structure of the SDC films. The SEM images show that the crystallinity becomes better and better with the increase of sputtering power from 100W to 300W. X-ray diffraction patterns indicate that the thin SDC electrolyte film on the Al2O3 ceramic substrate grows preferentially along the (111) compact plane with a pure fluorite structure when the RF power reaches 300W. After annealing treatment at 600°C and 800°C, respectively, it can be seen that SDC film becomes denser with few pinholes at the annealing temperature of 800°C. High oxygen ion conductivity (1.46×10-2 Scm-1) of the SDC film was obtained when the RF sputtering power and annealing temperature were 300W and 800°C, respectively.

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26

Hwang, Shun Fa, and Wen Bin Li. "PZT Thin Films Deposited by RF Magnetron Sputtering." Applied Mechanics and Materials 302 (February 2013): 8–13. http://dx.doi.org/10.4028/www.scientific.net/amm.302.8.

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PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

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27

Homma, Yoshio, and Sukeyoshi Tsunekawa. "Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias." Journal of The Electrochemical Society 132, no. 6 (June 1, 1985): 1466–72. http://dx.doi.org/10.1149/1.2114145.

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28

Tumanov, N. A., D. V. Kirillov, and E. V. Vorob’ev. "Investigation of a high-frequency magnetron sputtering system operation modes during copper thin films deposition." Journal of Physics: Conference Series 2270, no. 1 (May 1, 2022): 012055. http://dx.doi.org/10.1088/1742-6596/2270/1/012055.

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Abstract The results of studying the radio frequency (RF) magnetron sputtering (MS) operation parameters during copper sputtering are presented. A comparison of the growth rate dependence on power during the operation of MS is made in RF and DC modes. The pressure dependences of the RFMS growth rate and bias target voltage are obtained. The prospect of using RFMS for deposition of smooth coatings is shown.

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29

LI, WENHAO. "SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING." Surface Review and Letters 25, no. 02 (February 2018): 1850051. http://dx.doi.org/10.1142/s0218625x18500518.

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Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent and the crystal orientation in Cu2O thin films mainly depend on the temperature exchange, which contribute to the variation of the film morphology. Moreover, the gas flow has an effect on the valence of the copper ion in the film and the sputtering power mainly affects the growth rate of the films. This research promotes a more specific scheme to deposit proper Cu2O thin films with proper morphology and useful properties.

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30

Phelps, Justin Ryan, Ashwin Kumar Saikumar, Reza Abdolvand, and Kalpathy B. Sundaram. "Comparison of RF and High Impulse Magnetron Sputtered Gallium-Doped Zinc Oxide Thin Films." Coatings 13, no. 1 (December 31, 2022): 71. http://dx.doi.org/10.3390/coatings13010071.

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For the first time in the literature, the material properties of gallium-doped zinc oxide, grown from a high impulse magnetron sputtering system (HiPIMS), are reported. These material properties are compared to those of a typical radio frequency (RF) sputtering deposition. The films were grown without thermal assistance and were compared across multiple average deposition powers. The films’ resistivity, crystallinity, absorption coefficient, band gap, and refractive index were measured for each of the samples. It was observed that very similar results could be obtained between the HiPIMS and RF sputtering processes under the same average power conditions. It was found that the RF depositions demonstrated a slightly higher band gap and deposition rate as well as lower resistivity and optical absorption coefficient. Band gaps and grain size were found to increase with the power of the deposition for both HiPIMS and RF. These values ranged between 3.45 eV and 3.79 eV and 9 nm and 23 nm in this study, respectively. The absorption coefficient and resistivity were both found to decline with increasing power in both methods but reached minimums of 2800 cm−1 and 0.94 mOhm-cm, respectively, when sputtered using an RF power supply.

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31

Yu, Jie, Wen Hui Ma, Hang Sheng Lin, Hong Yan Sun, Xiu Hua Chen, and Bin Yang. "Fabrication of LSGM Thin Film Electrolyte on LSCM Anode by RF Magnetron Sputtering for IT-SOFC." Materials Science Forum 675-677 (February 2011): 81–84. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.81.

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La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) thin film electrolytes were fabricated on La0.7Sr0.3Cr0.5Mn0.5O3-δ (LSCM) porous anodes by radio-frequency (RF) magnetron sputtering. The formation and microstructure of LSGM thin films were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The effects of different sputtering conditions, such as Ar gas pressure, substrate temperature and sputtering power, on the performance of LSGM electrolyte film were estimated. Dense LSGM thin film electrolytes with thickness of about 2μm, which are compatible with LSCM-based anodes and without crack, have been successfully fabricated on LSCM-based anode supports by RF magnetron sputtering when sputtering power density is 5.2W·cm-2, Ar gas pressure is 5Pa and substrate temperature is 300°C. It is found that high sputtering power density and high Ar gas pressure, as well as high substrate temperature, are beneficial to deposition of dense electrolyte thin film, close bonding of electrolyte thin film with anode substrate, and formation of large three phase boundaries between anode and electrolyte.

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32

Achoi, M. F., Mohd Nor Asiah, Mohamad Rusop, and Saifollah Abdullah. "A Comparative Study of TiO₂ Nanocoated Mild Steel Surface Properties between Short and Long Sputtering Time of RF Magnetron." Advanced Materials Research 667 (March 2013): 562–68. http://dx.doi.org/10.4028/www.scientific.net/amr.667.562.

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TiO2 nanocoated mild steel surface has been successfully prepared via 100 watt of RF magnetron sputtering by using TiO2 target and sputtering condition was performed in 80sccm argon gas. The studied was done in comparing the surface properties of TiO2 nanocoated mild steel between short term and long term sputtering time at 5 and 60 minutes, respectively. From the results, we have found that the long-term sputtering time producing good surface coating with lower surface roughness at 0.033 nm with thickness in nanometer scale is 169 nm via AFM. Through Auger study revealed that the coating attributed Ti and O elements at energy of 383.48 eV and 483.44 eV, respectively. It was also showed that the intensity of that element high at about 100k a.u. in long-term compared to 55k a.u. short-term of sputtering time. It is thus showed that producing coating depends upon manipulation of parameter in RF magnetron sputtering.

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33

da Cunha, António F., F. Kurdzesau, and Pedro M. P. Salomé. "Cu(In,Ga)Se₂ Prepared by a 2 and 3-Stage Hybrid RF-Magnetron Sputtering and Se Evaporation Method: Properties and Solar Cell Performance." Materials Science Forum 514-516 (May 2006): 93–97. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.93.

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The potential of RF-magnetron sputtering to achieve high quality Cu(In,Ga)Se2 (CIGS) thin films and efficient solar cells with the goal of using a single technique for all solar cell processing steps is explored. The end point detection method was adapted to RF-magnetron deposition of CIGS in two- or three stages sputtering process. It allows the control of the final composition of the deposited layers in a reproducible way. The influence of substrate temperature and Ar pressure during the deposition on the surface and crossectional morphology of CIGS films was studied for two and three-stage sputtering process sequence. The solar cells prepared with films deposited by two-stage sputtering nave showed a better performance with maximum efficiency above 8 %.

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34

Tang, Hui Dong, Shou Hong Tan, and Zheng Ren Huang. "SiC Coatings Deposited by RF Magnetron Sputtering." Key Engineering Materials 280-283 (February 2007): 1309–12. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1309.

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Amorphous SiC coatings were deposited by RF magnetron sputtering from a sintered SiC target onto Si(100) substrate at room temperature. The influence of RF power on the surface morphology and the RMS surface roughness of the resulting SiC coatings was studied by using atomic force microscopy. Two types of surface morphologies were obtained. The corresponding forming mechanisms were also discussed.

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35

MASUDA, Haruho, Kyoichiro YASUDA, Michihiko TAKEDA, and Akira YOSHIDA. "Preparation of ZnSe films by RF sputtering." SHINKU 30, no. 5 (1987): 481–84. http://dx.doi.org/10.3131/jvsj.30.481.

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36

Cho, Jaekyong, Manabu Gomi, and Masanori Abe. "Ferromagnetic (LaSr)MnO3Films Deposited by RF Sputtering." Japanese Journal of Applied Physics 29, Part 1, No. 9 (September 20, 1990): 1686–89. http://dx.doi.org/10.1143/jjap.29.1686.

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37

Yazawa, Ichiro, Norio Terada, Katsuhiro Matsutani, Ryoji Sugise, Masatoshi Jo, and Hideo Ihara. "Orientation of CaCuO2Thin Films in RF Sputtering." Japanese Journal of Applied Physics 29, Part 2, No. 4 (April 20, 1990): L566—L568. http://dx.doi.org/10.1143/jjap.29.l566.

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38

Ramos, Manuel, John Nogan, Manuela Ortíz-Díaz, Jose L. Enriquez-Carrejo, Claudia A. Rodriguez-González, Jose Mireles-Jr-Garcia, Carlos Ornelas, and Abel Hurtado-Macias. "Mechanical properties of RF-sputtering MoS2thin films." Surface Topography: Metrology and Properties 5, no. 2 (June 12, 2017): 025003. http://dx.doi.org/10.1088/2051-672x/aa7421.

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39

Paven-Thivet, Le, C. Malibert, Ph Houdy, and P. A. Albouy. "RF-sputtering deposition of Al/Al2O3 multilayers." Thin Solid Films 336, no. 1-2 (December 1998): 373–76. http://dx.doi.org/10.1016/s0040-6090(98)01288-7.

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40

Mechnich, Peter. "Y2SiO5 coatings fabricated by RF magnetron sputtering." Surface and Coatings Technology 237 (December 2013): 88–94. http://dx.doi.org/10.1016/j.surfcoat.2013.08.015.

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41

Carabias, I., A. Martinez, M. A. Garcia, E. Pina, J. M. Gonzalez, A. Hernando, and P. Crespo. "Magnetostrictive thin films prepared by RF sputtering." Journal of Magnetism and Magnetic Materials 290-291 (April 2005): 823–25. http://dx.doi.org/10.1016/j.jmmm.2004.11.373.

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42

Silva Filho, José Maria Clemente da, Nelson Fabián Villegas Borrero, Gustavo Alexandre Viana, Rafael Borges Merlo, and Francisco Chagas Marques. "Lead Iodide Thin Films via rf Sputtering." Crystal Growth & Design 20, no. 3 (January 24, 2020): 1531–37. http://dx.doi.org/10.1021/acs.cgd.9b01250.

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43

Spencer, AG, and RP Howson. "Rf oscillations in dc planar sputtering magnetrons." Vacuum 38, no. 6 (January 1988): 497–98. http://dx.doi.org/10.1016/0042-207x(88)90595-7.

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44

Homma, Yoshio, Sukeyoshi Tunekawa, Akira Satou, and Tomoguki Terada. "Planarization Mechanism of RF‐Biased Al Sputtering." Journal of The Electrochemical Society 140, no. 3 (March 1, 1993): 855–60. http://dx.doi.org/10.1149/1.2056173.

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45

Tamai, Fujio, and Yuji Kawakami. "Reflecting Multi-Layer Coatings by RF Sputtering." Materials Science Forum 502 (December 2005): 309–14. http://dx.doi.org/10.4028/www.scientific.net/msf.502.309.

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This work is concerned with the proposition of high contrast multi-layer structure for the fabrication of reflecting surface in the visible range. The multi-layer SiO2/Ta2O5 system has superior heat resistance and reflecting properties. Ta2O5 and SiO2 thin films were prepared by RF plasma sputtering in Ar-O2 mixed gas using Ta2O5 and SiO2 target respectively. Secondary ion mass spectroscopy and SEM observation were performed in order to investigate the multi-layer structure. The XRD and XPS analyses were also performed in order to investigate the crystal structure and the chemical state of the films. The optical constants of Ta2O5 single film were investigated by the ellipsometric analysis. Using the Ta2O5 film doped Bi2O3 for a reflecting multi-layer structure improved the reflecting properties and the heat resistance of the multi-layer system because of the high refractive index of the doped film.

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Malavasi, L., M. C. Mozzati, G. Chiodelli, C. B. Azzoni, and G. Flor. "RF sputtering deposition of MgMn2O4spinel thin films." Journal of Materials Science 39, no. 5 (March 2004): 1671–75. http://dx.doi.org/10.1023/b:jmsc.0000016168.47812.88.

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Miyazaki, Takayuki, and Sadao Adachi. "Low‐temperature silicon homoepitaxy by rf sputtering." Journal of Applied Physics 72, no. 11 (December 1992): 5471–73. http://dx.doi.org/10.1063/1.351991.

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48

Yasuda, K., A. Yoshida, M. Takeda, H. Masuda, and I. Akasaki. "Boron nitride films prepared by RF sputtering." physica status solidi (a) 90, no. 1 (July 16, 1985): K7—K9. http://dx.doi.org/10.1002/pssa.2210900146.

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49

CHAHBOUN, N., K. ELASSALI, A. KHIARA, E. AMEZIANE, and T. BEKKAY. "Growth of CuAlTe2 films by RF sputtering." Solar Energy Materials and Solar Cells 32, no. 2 (February 1994): 213–18. http://dx.doi.org/10.1016/0927-0248(94)90305-0.

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50

Choopun, Supab, Niyom Hongsith, Sornchai Tanunchai, Torranin Chairuangsri, Chatchai Krua-in, Somsorn Singkarat, Thirapat Vilaithong, Pongsri Mangkorntong, and Nikorn Mangkorntong. "Single-crystalline ZnO nanobelts by RF sputtering." Journal of Crystal Growth 282, no. 3-4 (September 2005): 365–69. http://dx.doi.org/10.1016/j.jcrysgro.2005.05.020.

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