Relevant bibliographies by topics / RF sputtering

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'RF sputtering'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 March 2023

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Journal articles on the topic "RF sputtering"

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Yokogawa, Yoshiyuki, Taishi Morishima, Mitunori Uno, Masakazu Kurachi, Yutaka Doi, Harumi Kawaki, and Masato Hotta. "Wettability and Durability of Si-O Coatings on Zirconia Substrate by RF-Magnetron Plasma Sputtering." Key Engineering Materials 782 (October 2018): 189–94. http://dx.doi.org/10.4028/www.scientific.net/kem.782.189.

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The wettability and durability of Si-O coatings prepared on zirconia substrate using radiofrequency magnetron sputtering (rf-sputtering) was studied. XRD analysis revealed no phase transformation of zirconia before/after rf-sputtering process. XPS spectroscopy showed that as-deposited films with a SiO2configuration was formed. EDX analysis indicated that the Si/Zr ratio was high and when magnetron rf-sputtering was performed using a plasma gas Ar+5% O2, which may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate. The wear testing using pin on disc wear apparatus was performed. The wettability and durability of Si-O coatings fabricated by magnetron radiofrequency magnetron sputtering (rf-sputtering) on zirconia substrate was studied. A plasma gas Ar+5% O2may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate
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Park, Min Woo, Wang Woo Lee, Jae Gab Lee, and Chong Mu Lee. "A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films." Materials Science Forum 546-549 (May 2007): 1695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1695.

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Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.
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Zhao, Haili, Jingpei Xie, and Aixia Mao. "Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering." Applied Sciences 9, no. 7 (April 3, 2019): 1395. http://dx.doi.org/10.3390/app9071395.

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Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.
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Biederman, H., P. Bílková, J. Ježek, P. Hlídek, and D. Slavínská. "RF magnetron sputtering of polymers." Journal of Non-Crystalline Solids 218 (September 1997): 44–49. http://dx.doi.org/10.1016/s0022-3093(97)00196-8.

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Stelmashuk, V., H. Biederman, D. Slavı́nská, M. Trchová, and P. Hlidek. "Rf magnetron sputtering of polypropylene." Vacuum 75, no. 3 (July 2004): 207–15. http://dx.doi.org/10.1016/j.vacuum.2004.02.007.

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Morohashi, Shin'ichi, Atsunori Matsuo, Toshihiro Hara, Shogo Tsujimura, and Masanori Kawanishi. "SiO2Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering." Japanese Journal of Applied Physics 40, Part 1, No. 8 (August 15, 2001): 4876–77. http://dx.doi.org/10.1143/jjap.40.4876.

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Ma, Wei Hong, and Chang Long Cai. "Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering." Advanced Materials Research 415-417 (December 2011): 1921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1921.

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Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.
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Jin, Chun Long, Ha Na Shim, Eou Sik Cho, and Sang Jik Kwon. "Effect of Pulsed-DC Power on the Zinc Oxide Window Layer of CIGS Solar Cells Deposited by In-Line Sputtering Methods." Advanced Materials Research 805-806 (September 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.131.

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Zinc oxide (ZnO) thin film was deposited on the glass substrate and cadmium-sulfide (CdS) thin film at room temperature by using an in-line pulsed-DC magnetron sputtering system. The sputtering process was carried out at various pulsed-DC power and radio frequency (RF) power from 400 W to 1 kW. From the thickness of the sputtered ZnO films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, for both pulsed-DC sputtered and RF sputtered ZnO films, the similar results were obtained in case of the energy band gaps and the structural characteristics such as adhesion to CdS. From the results, the ZnO films sputtered by pulsed-DC power are expected to be used in the fabrication process instead of RF power.
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Lee, Chong Mu, Choong Mo Kim, Sook Joo Kim, and Yun Kyu Park. "Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering." Key Engineering Materials 336-338 (April 2007): 581–84. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.581.

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ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.
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Watazu, Akira, Katsuhiko Kimoto, Sonoda Tsutomu, Kinya Tanaka, Tomoji Sawada, Minoru Toyoda, and Naobumi Saito. "Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets." Materials Science Forum 544-545 (May 2007): 495–98. http://dx.doi.org/10.4028/www.scientific.net/msf.544-545.495.

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Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.
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Dissertations / Theses on the topic "RF sputtering"

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Prasankumar, Rohit Prativadi 1975. "Novel saturable absorber devices grown using RF and magnetron RF sputtering." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80599.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
Includes bibliographical references (leaves 81-85).
by Rohit Prativadi Prasankumar.
S.M.
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Subramanian, Senthilnathan. "Characterization of cadmium zinc telluride solar cells by RF sputtering." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000429.

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Silva, Adilson Oliveira da. "Estudo da obtenção de filmes de anatásio utilizando rf-magnetron sputtering." Florianópolis, SC, 2000. http://repositorio.ufsc.br/xmlui/handle/123456789/78441.

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Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico.
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Filmes finos de TiO2 foram preparados pela técnica de RF-magnetron sputtering utilizando-se um alvo de rutilo. As camadas foram depositadas sobre substratos de Silício monocristalino e sílica vítrea, mantidos a temperatura ambiente. Primeiramente foi verificado a influência da fração molar de oxigénio na formação da estrutura dos filmes de TiO2. As frações testadas foram 25, 37,5 e 50 % de O2 na mistura gasosa oxigênio/argônio. Após o processo de deposição todas as amostras tiveram suas estruturas analisadas e indicaram a formação de camadas de filmes amorfos. Entretanto as mesmas amostras, após tratamentos térmicos nas temperaturas de 400 e 1000 °C, desenvolveram filmes cristalinos com a presença unicamente da fase rutilo. Dessa forma foi observado que as variações das doações molares de oxigênio não foram determinantes para a formação de filmes com a fase anatásio. Numa segunda etapa, SiO2 foi adicionada com impurezas na camada dos filmes- de TiO2. Placas de sílica vítrea foram disposta sobre o alvo de rutilo de forma a produzirem filmes com diferentes teores de sílica. As análises químicas das superfícies indicaram a obtenção de amostras de TiO2 com 15, 33 e 49 % de SiO2. Após o processo de deposição os filmes também apresentaram a formação de uma fase amorfa, porém as camadas depositadas sobre substratos de silício desenvolveram a fase anatásio após o tratamento térmico. Nas amostras de TiO2 com 15% SiO2 a fase anatásio cresceu juntamente com a fase rutilo, mas nos filmes com teores de 33 e 49% de sílica apenas o crescimento a fase anatásio foi observado. As mesmas formações não foram identificados nos- filmes depositados sobre substratos de sílica vítrea. Nesses substratos a única fase desenvolvida foi a do rutilo. Sendo assim é possível observar que a presença sílica tem uma grande influência nas transformações de fases dos filmes de TiO2, porém somente a sua adição não é suficiente para garantir a formação da fase anatásio. A interação da camada dos filmes com o substrato é também um dos fatores determinantes da estrutura final dos filmes de TiO2. Por fim verificou-se que a formação de filmes de TiO2 com deficiência em oxigênio podem favorecer a nucleação e o crescimento da fase anatásio.
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Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.

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With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as hardness and reduced modulus of the SiCN films. Surface morphology of the films was characterized by using atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. Further, the films were annealed in dry oxygen ambient in the temperature range of 400 – 900°C and characterized using XPS to investigate the chemical composition and oxidation kinetics at each annealing temperature. The surface roughness of these films was studied as a function of annealing temperature and film composition with the help of a "Veeco" optical profilometer. Nano-indentation studies indicated that the hardness and the reduced modulus of the film are sensitive to the N2/Ar ratio of gas flow during sputtering. AFM studies revealed that the films become smoother as the N2/Ar ratio is increased. XPS data indicated the existence of C-N phases in the as-deposited films. The study of oxidation kinetics of RF sputter deposited SiCN thin films, using XPS, suggest that N2 co-sputtering helps to suppress the formation of a surface oxide, by allowing un-bonded Si to bond with N and C inside the vacuum chamber as opposed to bonding with O in atmosphere.
M.S.M.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Mechanical Engineering
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Treharne, Robert E. "RF magnetron sputtering of transparent conducting oxides and CdTe/CdS solar cells." Thesis, Durham University, 2011. http://etheses.dur.ac.uk/3310/.

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The applicability of radio frequency magnetron sputtering (RFMS) for the development of: a) transparent conducting oxides (TCOs) and b) fully sputtered CdTe/CdS solar cells is demonstrated. TCO materials - In2O3:Sn (ITO), SnO2:F (FTO), ZnO:Al (AZO) and ZnO:F (FZO) - were investigated with respect to key deposition parameters in an attempt to generate films with low resistivities and high transmittances. Minimum resistivity values of 1.2 x 10^-4 Ohm.cm and 4.7 x 10^-4 Ohm.cm were achieved for films of ITO and AZO respectively while maintaining transmittances of > 80%. Such films are viable for incorporation into CdTe based solar cells as front contact layers. A model for the dielectric permittivity for TCO materials is presented based on classical Lorentz and Drude models of bound and free electron behaviour, and a model of inter-band transitions that describes behaviour in the vicinity of a direct band-gap. The model is successfully applied to the tting of transmittance data for TCO films and used to extract opto-electronic properties. The results of a fully-sputtered CdTe prototype device structure are presented; a maximum conversion eciency of 12.5% is achieved. Further investigations, via XRD, into the effect of sputter pressure on CdTe films indicates that a 10 mTorr Ar pressure is best for optimising device effciency. J-V-T and C-V measurements show that at room temperature, current transport in the sputtered devices is dominated by Shockley-Read-Hall recombination and that the CdTe layer, under zero applied bias, is fully depleted with a carrier concentration of 4 x 10^14 cm^-3. Cross-sectional SEM and TEM show that both CdS and CdTe layers undergo significant recrystallisation during post-deposition CdCl2 treatment. A multi-layer optical model of transmittance is developed based on a transfer matrix method and using optical data acquired from spectrophotometry and ellipsometry. The model is used to predict the fraction of transmitted light received by the CdTe absorber in a fully sputtered device and it is indicated that through further thinning of the CdS layer, to below 50 nm, significant gains in transmittance, upwards of 20%, may be achieved. It is established that the further development of sputtered CdTe/CdS solar cells requires a significant improvement in the uniformity of the current CdCl2 based post-deposition treatment.
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Ramalhadeiro, Rui Miguel Martins. "Estudo estrutural e ótico de filmes de ZnO/MgO por RF-sputtering." Master's thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/9300.

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Mestrado em Física
Este trabalho tem como objetivo o estudo estrutural e ótico de filmes de óxido de Zinco (ZnO) em substrato de óxido de Magnésio (MgO), em função das condições de crescimento por RF-sputtering (pulverização catódica de rádiofrequência). As condições de pressão parcial de O2 e temperatura do substrato são variáveis que influenciam bastante o crescimento de filmes finos de ZnO. A escolha do substrato cúbico de MgO, reside no facto deste material além de ser um óxido, possuir arranjo atómico não polar que poderá favorecer o crescimento de filmes finos de ZnO com orientações segundo o plano-m. Na análise estrutural foi usado difração de raio-X, mapas de espaço recíproco, figura de pólos por High Resolution X-Ray Difraction, “HRXRD” e espetroscopia de Raman permitindo observar a orientação dos planos de crescimento e a relação epitaxial entre o filme e o substrato. Na caracterização ótica é apresentada medidas de fotoluminescência em que se observa emissão excitónica para valores mais elevados de energia, assim como bandas largas não estruturadas para valores inferiores.
The aim of this work is the structural and optical characterization of samples of zinc oxide (ZnO) on substrates of magnesium oxide (MgO) in relation to growth conditions by RF-sputtering. The conditions for O2 partial pressure and substrate temperature are variables that influence the growth of ZnO thin films. The choice of cubic MgO substrates, besides being an oxide, possesses atomic non-polar arrangements that could favor the growth of ZnO thin films with m-plane orientations. In structural analysis was used X-ray diffraction, reciprocal space maps, pole figure by High Resolution X-Ray Diffraction, "HRXRD" and Raman spectroscopy allowing to observe the orientation of growth plans and the epitaxial relationship between film and substrate. In optical analyses was used photoluminescence as technique and it is observed for higher values of energy excitonic emission as well as unstructured broad bands for lower energy values.
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Peres, Marco António Baptista. "Estudo de defeitos em filmes finos de ZnO depositados por Rf-sputtering." Doctoral thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/13983.

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Doutoramento em Engenharia Física
Neste trabalho foram estudados diferentes filmes finos de ZnO depositados por Rf-Sputtering. Filmes finos de ZnO com diferentes propriedades óticas foram obtidos intencionalmente variando os parâmetros de deposição. De modo a correlacionar as propriedades óticas e estruturais com os parâmetros de deposição, foram utilizadas diferentes técnicas de caracterização avançadas, tais como, fotoluminescência, microscopia de força atómica, difração de raios- X e retrodispersão de Rutherford. Este trabalho centra-se na discussão e análise das bandas de emissão vermelha, verde e azul, comumente observadas em amostras de ZnO e cuja natureza tem sido objeto de grande controvérsia na literatura. A utilização de técnicas de caracterização estrutural revelou-se de extrema importância para correlacionar as propriedades físicas de composição e estrutura com os centros óticos observados nos filmes. Nesta base, foram propostos e discutidos diferentes modelos de recombinação ótica associados à qualidade estrutural dos filmes, considerando modelos de camadas que descrevem a heterogeneidade lateral e em profundidade. Desta análise verificou-se a presença de heterogeneidade estrutural e composicional, que aumenta a complexidade na compreensão da correlação dos parâmetros de deposição com as propriedades óticas dos filmes. Foi discutida a limitação e validade de diferentes modelos tendo em conta a presença da heterogeneidade existente nos filmes estudados. Este trabalho contribui assim para uma melhor compreensão da complexidade de interação dos diferentes defeitos e o seu efeito nas propriedades óticas, nomeadamente o papel dos defeitos de interface, na superfície, nas fronteiras de grão e junto ao substrato.
This thesis focuses on the study of different ZnO thin films deposited by Rf- Sputtering. Thin films deposited under different conditions were produced to deliberately induce distinct optical active centres. To correlate the optical and structural properties, different characterization techniques were used such as, Photoluminescence, X-ray Diffraction, Atomic Force Microscopy and Rutherford Backscattering Spectroscopy. The main purpose of this study is the investigation and discussion of the controversial red, green, and blue emission bands, often observed in ZnO samples. The structural and compositional characterization techniques showed to be of extreme importance to correlate the luminescence with the samples morphology, composition and structure. Based on temperature and excitation dependent photoluminescence models for the recombination centres were proposed and discussed. Considering layer models, the role of the samples heterogeneity in the optical properties was explored. This analysis confirms the presence of a compositional and structural heterogeneity, which increases the complexity of potential correlations between the deposition parameters, structural properties and optically active defects. The validity and limitation of the proposed models was studied and discussed. This thesis intends to contribute to a higher comprehension of the complexity of the interaction between different defects, and its effects on the optical properties.
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Campbell, Bryce W. "Preparation and characterization of lithium thiogermanate thin films using RF magnetron sputtering." [Ames, Iowa : Iowa State University], 2006.

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Bosco, Giácomo Bizinoto Ferreira 1987. "Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD." [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.

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Orientador: Leandro Russovski Tessler
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
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Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclotrônica de elétrons (ECR PECVD) e por pulverização catódica reativa em radiofrequência (reactive RF-Sputtering) ¿ com o propósito de avançar a investigação em fabricação de novos materiais e dos mecanismos da emissão de luz de íons de Tb quando diluídos em materiais baseados em silício. A fotoluminescência (PL) atribuída aos filmes de a-SiNx:H foi investigada em termos das condições de deposição e correlacionadas com suas propriedades estruturais e de recozimento pós-deposição. Entre as propriedades caracterizadas estão: estequiometria, taxa de deposição, índice de refração, coeficiente de extinção, bandgap ótico E04, concentração de térbio e vizinhança química presente ao redor de íons Tb3+. Concentrações de Tb da ordem de 1.8 at.% ou 1.4×?10?^21 at/cm^3 foram obtidas em amostras crescidas por Sputtering enquanto que concentrações de 14.0 at.%, ou da ordem ?10?^22 at/cm^3, puderam ser obtidas em amostras crescidas por ECR PECVD. Em Sputtering, a incorporação de Tb varia linearmente com a área recoberta por pastilhas de Tb4O7 em pó, enquanto que em PECVD, a incorporação de Tb é inversamente proporcional e pode ser ajustada sensivelmente pelo fluxo de gás SiH4. Forte emissão de luz, atribuída às transições eletrônicas em Tb3+ (PL do Tb), foi obtida em filmes não-recozidos que possuíam bandgap estequiométrico (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). Espectros de PL do Tb não mostraram mudanças significativas no formato e na posição dos picos de emissão devido a alterações na temperatura de recozimento, nas condições de deposição ou entre amostras crescidas por diferentes técnicas de deposição. Entretanto, esses parâmetros influenciaram fortemente a intensidade da PL do Tb. Estudos da estrutura fina de absorção de raios-X (XAFS) em filmes crescidos por sputtering mostraram a estabilidade da vizinhança química ao redor dos íons Tb3+ mesmo em altas temperaturas (1100ºC). Investigações por sonda atômica tomográfica (APT) não encontraram formação de nanoclusters envolvendo ou não Tb, mesmo após recozimentos em altas temperaturas. Isso sugere que a excitação de Tb3+ deve ocorrer através da própria matriz hospedeira amorfa e não por mudanças no campo cristalino e, portanto, na força de oscilador das transições eletrônicas do Tb3+. Caracterização da densidade de ligações Si-H por espectroscopia infravermelha a transformada de Fourier (FTIR) em filmes recozidos em diferentes temperaturas foi relacionada com a intensidade da PL do Tb. Ela mostra que um decréscimo na densidade das ligações Si-H, que está relacionada a um aumento na concentração de ligações pendentes de Si (Si-dbs), resulta em filmes com maior intensidade na PL do Tb. Portanto, isso sugere que a excitação de Tb3+ parece acontecer através de transições envolvendo Si-dbs e estados estendidos, o que é consistente com o modelo de excitação Auger por defeitos (DRAE)
Abstract: This work offers optical and structural characterization of terbium (Tb) doped hydrogenated amorphous silicon nitrides thin films (a-SiNx:H) grown by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) and reactive RF-Sputtering with the purpose of advancing the investigation in fabrication of novel materials and the mechanisms of light emission of Tb ions when embedded in Si-based materials. Photoluminescence (PL) of a-SiNx:H films were investigated and correlated with the deposition conditions, structural properties, and post-deposition thermal treatments (isochronal annealing under flow of N2). Among the characterized properties are: film stoichiometry, deposition rate, refractive index, extinction coefficient, optical bandgap, terbium concentration, and the chemical neighborhood around Tb ions. Tb concentrations of about 1.8 at.% or 1.4×?10?^21 at/cm^3 have been achieved in Sputtering system while concentrations of 14.0 at.%, or about ?10?^22 at/cm^3, could be achieved in ECR PECVD samples. In Sputtering, Tb incorporation varies linearly with the covered area of the Si target by Tb4O7 powder pellets, while in PECVD, Tb incorporation is inversely proportional to and can be sensitively adjusted through SiH4 gas flow. Bright PL attributed to Tb3+ electronic transitions (Tb PL) were obtained in as-deposited films with stoichiometric bandgaps (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). The Tb PL spectra did not show any significant change in shape and in PL peak positions due to alterations in annealing temperature, deposition conditions or due to the used deposition method. However, these parameters strongly affected Tb PL intensity. Studies of X-ray absorption fine structure (XAFS) in Sputtering grown films show the stability of the chemical neighborhood around Tb3+ under annealing conditions even after thermal treatments at temperatures as high as 1100ºC. Atom probe tomography (APT) investigation also found no formation of nanoclusters of any type (involving Tb ions or not) after high temperature annealing treatments suggesting that Tb3+ excitation should come from the amorphous host matrix itself and not by changes in crystal field and thus in oscillator strength of Tb3+ electronic transitions. Fourier transform infrared spectroscopy (FTIR) characterization of Si-H bond density in films treated atin different annealing temperatures were crossed correlated with Tb PL intensity. It shows that a decrease in Si-H bond density, related to increase in Si dangling bonds (Si-dbs) concentration, results in greater Tb PL intensity. Thus, it suggests that excitation of Tb3+ happens through transitions involving silicon dangling bonds and extended states, consistent with the defect related Auger excitation model (DRAE)
Doutorado
Física
Doutor em Ciências
142174/2012-2
010308/2014-08
CNPQ
CAPES
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Gignac, Lynne Marie. "Processing and characterization of RF sputtered alumina thin films." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184611.

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Abstract:
Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant variable controlling the growth of unetchable films. The films were categorized according to their degree of solubility in H₃PO₄ and were examined using various microanalytical characterization techniques. TEM analysis directly showed the existence of crystalline γ-Al₂O₃ in the film at the film-substrate interface. The γ-Al₂O₃ phase grew with a preferred orientation coincident with the substrate orientation--as in heteroepitaxial growth. The occurrence of this film phase was related to the oxygen partial pressure, the substrate material, and the substrate temperature and was believed to be the cause of the film's incomplete etching behavior.
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Books on the topic "RF sputtering"

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Hayes, John Richard. Validation of a plasma sheath model for use in RF sputtering systems. [s.l: The Author], 2003.

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Centre, Bhabha Atomic Research, ed. Development of a state-of-the-art R.F. sputtering coating system for the fabrication of multilayer x-ray mirrors. Mumbai: Bhabha Atomic Research Centre, 2000.

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Karner, Christine. Thin film characterisation of polycrystalline II-VI display phosphor materials prepared bypulsed laser deposition and RF sputtering. [s.l: The Author], 1997.

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Ang, Wie Ming. ACTFEL phosphor deposition by RF sputtering. 1992.

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Book chapters on the topic "RF sputtering"

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Tang, Hui Dong, Shou Hong Tan, and Zheng Ren Huang. "SiC Coatings Deposited by RF Magnetron Sputtering." In High-Performance Ceramics III, 1309–12. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-959-8.1309.

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Tamai, Fujio, and Yuji Kawakami. "Reflecting Multi-Layer Coatings by RF Sputtering." In Materials Science Forum, 309–14. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-980-6.309.

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Vasanelli, L., A. Valentini, A. Quirini, A. M. Mancini, and A. Losacco. "ZnO/CdTe Solar Cells Prepared by RF Sputtering." In Seventh E.C. Photovoltaic Solar Energy Conference, 635–40. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_113.

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Naoe, Hiroyuki, Satoru Kishida, Fumihiko Toda, Yuzuru Mitani, and Heizo Tokutaka. "Ba0.6Rb0.4 BiO Thin Films by RF Magnetron Sputtering." In Advances in Superconductivity X, 1011–14. Tokyo: Springer Japan, 1998. http://dx.doi.org/10.1007/978-4-431-66879-4_239.

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Hattori, Hisao, Hideo Itozaki, and Shuji Yazu. "(100) Oriented BSCCO Thin Film by RF Magnetron Sputtering." In Advances in Superconductivity III, 1049–52. Tokyo: Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_237.

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Singha, R. K., K. Das, S. Das, A. Dhar, and S. K. Ray. "Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering." In Semiconductor Photonics: Nano-Structured Materials and Devices, 89–91. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.89.

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Naoe, Hiroyuki, Yuzuru Mitani, Toshiyuki Kitagawa, Satoru Kishida, Fumihiko Toda, and Heizo Tokutaka. "Ba1-xRbxBiOy Thin Films Prepared by Rf Magnetron Sputtering." In Advances in Superconductivity XI, 1055–58. Tokyo: Springer Japan, 1999. http://dx.doi.org/10.1007/978-4-431-66874-9_247.

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Shimizu, Kenichi, and Tomoaki Mitani. "Application Example 16: On the Nature of rf-GD Sputtering." In New Horizons of Applied Scanning Electron Microscopy, 49–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_17.

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Díaz-Reyes, Joel, Roberto S. Castillo-Ojeda, and Javier Martínez-Juárez. "Characterization of Wurtzite Type ZnS Grown by RF Magnetron Sputtering." In Materials Characterization, 189–96. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15204-2_19.

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Van Cromphaut, C., V. G. de Resende, E. De Grave, L. Presmanes, I. Pasquet, and P. Thaillades. "ILEEMS of thin α-Fe2O3 films prepared by RF sputtering." In ISIAME 2008, 175–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01370-6_22.

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Conference papers on the topic "RF sputtering"

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Churton, B., L. Couëdel, A. A. Samarian, M. Mikikian, L. Boufendi, José Tito Mendonça, David P. Resendes, and Padma K. Shukla. "Dust Growth by RF Sputtering." In MULTIFACETS OF DUSTRY PLASMAS: Fifth International Conference on the Physics of Dusty Plasmas. AIP, 2008. http://dx.doi.org/10.1063/1.2996830.

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Biederman, H. "Plasma polymers prepared by rf sputtering." In IEE Seminar Plasma Polymerisation - Processing for the Future. IEE, 1999. http://dx.doi.org/10.1049/ic:19990163.

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Jing Li, Suntao Wu, and Junyong Kang. "ZnO films deposited by RF magnetron sputtering." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511390.

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Chiasera, Alessandro, Francesco Scotognella, Dominik Dorosz, Gianluca Galzerano, Anna Lukowiak, Davor Ristic, Giorgio Speranza, et al. "Glass based structures fabricated by rf-sputtering." In 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2017. http://dx.doi.org/10.23919/mipro.2017.7973384.

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Chiasera, A., F. Scotognella, S. Varas, I. Kriegel, G. Galzerano, L. Criante, A. Lukowiak, et al. "Dielectric multilayer structures fabricated by rf-sputtering." In 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8086607.

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German, J., and R. Lovro. "RF Sputtering of ITO on Rotary Cathodes." In Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2014. http://dx.doi.org/10.14332/svc14.proc.1828.

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Chiasera, A., C. Macchi, S. Mariazzi, S. Valligatla, S. Varas, M. Mazzola, N. Bazzanella, et al. "GeO2glass ceramic planar waveguides fabricated by RF-sputtering." In SPIE OPTO, edited by Michel J. F. Digonnet and Shibin Jiang. SPIE, 2014. http://dx.doi.org/10.1117/12.2042099.

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Adamiec, Krzysztof, Jaroslaw Rutkowski, S. Bednarek, and E. Michalski. "RF sputtering deposition of CdTe on GaAs substrate." In XII Conference on Solid State Crystals: Materials Science and Applications, edited by Antoni Rogalski, Jaroslaw Rutkowski, Andrzej Majchrowski, and Jerzy Zielinski. SPIE, 1997. http://dx.doi.org/10.1117/12.276217.

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Grozeva, Margarita G., and Nikola V. Sabotinov. "Sputtering capacitively coupled rf-excited copper ion laser." In Ninth International School on Quantum Electronics: Lasers--Physics and Applications, edited by Peter A. Atanasov. SPIE, 1996. http://dx.doi.org/10.1117/12.262909.

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Yu, Zhinong, Jin Xu, We Xue, Xia Li, and Jinwei Li. "The preparation of AZO films with RF sputtering." In International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, edited by Liwei Zhou. SPIE, 2007. http://dx.doi.org/10.1117/12.791173.

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Reports on the topic "RF sputtering"

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L.H. Ouyang, D.L. Rode, T. Zulkifli, B. Abraham-Shrauner, N. Lewis, and M.R. Freeman. GaAs Films Prepared by RF-Magnetron Sputtering. Office of Scientific and Technical Information (OSTI), August 2001. http://dx.doi.org/10.2172/821684.

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Tzeng, Yonhua, and Hongbin Zhu. Electron Assisted Deposition of Cubic Boron Nitride by RF Magnetron Sputtering. Fort Belvoir, VA: Defense Technical Information Center, April 1999. http://dx.doi.org/10.21236/ada362770.

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Coutts, T. J., X. Wu, and W. P. Mulligan. High performance transparent conducting films of cadmium indate prepared by RF sputtering. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/296769.

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Foster, C. M., R. Csencsits, P. M. Baldo, G. R. Bai, Z. Li, L. E. Rehn, L. A. Wills, and R. Hiskes. Epitaxial Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3}/SrRuO{sub 3} (x = 0, 0.35, 0.65) multilayer thin films on SrTiO{sub 3}(100) and MgO(100) prepared by MOCVD and RF sputtering. Office of Scientific and Technical Information (OSTI), February 1995. http://dx.doi.org/10.2172/52818.

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