Relevant bibliographies by topics / RF Plasma CVD

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'RF Plasma CVD'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "RF Plasma CVD"

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Hay, Stephen O., Ward C. Roman, and Meredith B. Colket. "CVD diamond deposition processes investigation: CARS diagnostics/modeling." Journal of Materials Research 5, no. 11 (November 1990): 2387–97. http://dx.doi.org/10.1557/jmr.1990.2387.

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We have applied Coherent Anti-Stokes Raman Spectroscopy (CARS), using a narrowband, scanned colinear configuration, to measure temperatures, relative concentrations, and detect species in low pressure CVD of polycrystalline diamond. CARS measurements were obtained for methane, hydrogen, and acetylene in either or both a rf plasma reactor and a hot filament reactor. In the rf PACVD experiments a mixture of 1% CH4 in H2 was used at a total pressure of 5 torr. The rf power input to the plasma was 300 watts and the H2 and CH4 flow rates were 99 and 1 seem, respectively. As acetylene (C2H2) has been proposed as an intermediate in diamond growth, it was selected for the initial series of measurements. In the absence of rf power, a sensitivity of 5 mtorr was observed; in the plasma downstream of the rf coils, no observable signal attributable to C2H2 was evident. This places an upper limit to conversion of methane to acetylene at 20%, a figure representing the observed sensitivity to C2H2. In the hot filament reactor, the gas flow was 200 sccm of 1% CH4 in H2 at a total pressure of 150 torr. Under these conditions, C2H2 was detectable. Absolute concentrations were not calculated, but the observed spectra are within an order of magnitude of our sensitivity limit. This allows estimation of the C2H2 partial pressure near the substrate as 5–50 mtorr or from 0.66 to 6.6% conversion from methane. In view of this low conversion percentage, the absence of a signal in the rf experiments must be taken as inconclusive. CARS spectra of methane were also obtained in both reactors. In the rf reactor, under similar conditions to those described previously, the methane relative concentration decreased to 25% as the rf power was increased from zero to 400 watts. In the hot filament reactor, CH4 CARS signal profiles were obtained as a function of axial distance from the hot filament, and parametrically as a function of filament temperature. Comparison of these profiles, in which the observed signal decayed monotonically as the filament was approached and increased monotonically downstream of the filament, was made with theoretical calculations. This comparison showed that the fluctuations were attributable to temperature/pressure effects and not to chemistry. To determine if the observed depletion in the rf plasma was similarly attributable, the CARS signal of hydrogen was observed as a function of axial distance downstream of the rf coil centerline and parametrically as a function of rf power. In contrast to expected behavior in the thermal hot filament reactor, little rotational excitation was observed in the plasma. Rotational temperatures were assigned to hydrogen based upon comparison with theoretically derived spectra. At 450 watts of rf power, rotational temperatures of 340 K were observed 4 to 6 cm downstream of the coil, the region where the 25% decrease in CH4 was observed. Little or no density fluctuations accrue due to these temperatures, indicating that the observed depletion in methane signal is attributable to decomposition or chemical reaction in the plasma. In summary, CARS is applicable to reactant species (CH4) axial profiling in both reactors, but can be limited by sensitivity in the detection of intermediate or product species (C2H2). In addition, CARS thermometry can be utilized to profile the rotational temperatures of selected species.
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YAMAMOTO, Masaoki, Masayuki FUKUI, and Takayuki SHIBATA. "Properties of carbonous films synthesized by RF plasma CVD." Journal of the Japan Society for Precision Engineering 55, no. 12 (1989): 2222–27. http://dx.doi.org/10.2493/jjspe.55.2222.

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Mannan, Md Abdul, Masamitsu Nagano, Norie Hirao, and Yuji Baba. "Hexagonal BCN Films Prepared by RF Plasma-enhanced CVD." Chemistry Letters 37, no. 1 (January 5, 2008): 96–97. http://dx.doi.org/10.1246/cl.2008.96.

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TSAKADZE, E., K. OSTRIKOV, Z. TSAKADZE, N. JIANG, R. AHMAD, and S. XU. "CONTROL AND DIAGNOSTICS OF INDUCTIVELY COUPLED PLASMAS FOR CHEMICAL VAPOUR DEPOSITION ON NANOCOMPOSITE CARBON NITRIDE-BASED FILMS." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 1143–47. http://dx.doi.org/10.1142/s0217979202011019.

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Control and diagnostics of low-frequency (~ 500 kHz) inductively coupled plasmas for chemical vapor deposition (CVD) of nano-composite carbon nitride-based films is reported. Relation between the discharge control parameters, plasma electron energy distribution/probability functions (EEDF/EEPF), and elemental composition in the deposited C-N based thin films is investigated. Langmuir probe technique is employed to monitor the plasma density and potential, effective electron temperature, and EEDFs/EEPFs in Ar + N2 + CH4 discharges. It is revealed that varying RF power and gas composition/pressure one can engineer the EEDFs/EEPFs to enhance the desired plasma-chemical gas-phase reactions thus controlling the film chemical structure. Auxiliary diagnostic tools for study of the RF power deposition, plasma composition, stability, and optical emission are discussed as well.
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Inao, Takuro, Masahiko Kumadaki, Kohki Satoh, Masaki Yoshino, and Hidenori Itoh. "Deposition of Boron Nitride Films using RF Plasma CVD Method." IEEJ Transactions on Fundamentals and Materials 134, no. 6 (2014): 397–401. http://dx.doi.org/10.1541/ieejfms.134.397.

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Kashem, Abul, Masaki Matsushita, and Shinzo Morita. "RF Plasma CVD of C-S Compound under Hydrogen Dilution." Journal of Photopolymer Science and Technology 13, no. 1 (2000): 47–49. http://dx.doi.org/10.2494/photopolymer.13.47.

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Jie, Jiang, and Liu Chenzan. "Diamond-like carbon thin films prepared by rf-plasma CVD." Vacuum 42, no. 16 (1991): 1058. http://dx.doi.org/10.1016/0042-207x(91)91327-k.

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MITSUI, Akira, and Akio KATO. "Preparation of SiC Powders by CVD Method Using RF-Plasma." Journal of the Ceramic Association, Japan 94, no. 1089 (1986): 517–20. http://dx.doi.org/10.2109/jcersj1950.94.1089_517.

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Mitomo, Tohru, Tomohiro Ohta, Hiroaki Sasaki, Kenichi Ohtsuka, and Yasuhiro Habu. "Deposition of amorphous-carbon films by RF plasma CVD method." KAGAKU KOGAKU RONBUNSHU 17, no. 2 (1991): 305–12. http://dx.doi.org/10.1252/kakoronbunshu.17.305.

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Mitsui, Akira, and Akio Kato. "Preparation of SiC powders by CVD method using RF-plasma." International Journal of High Technology Ceramics 3, no. 1 (January 1987): 85. http://dx.doi.org/10.1016/0267-3762(87)90071-3.

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Dissertations / Theses on the topic "RF Plasma CVD"

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Bránecký, Martin. "Tenké vrstvy připravené v RF doutnavém výboji a jejich fyzikálně-chemické vlastnosti." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221284.

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Theoretical part of this master thesis was focused on literature recherché dealing with the formation of thin films, plasma, plasma analyses using mass spectrometry and plasma polymerization. Further, this section describes the analysis of thin films using optical methods such as spectroscopic ellipsometry and FT-IR spectrometry. Experimental part describes the materials which are used for the preparation of thin films as well as a description of the equipment for preparation of thin films using a technology of plasma-enhanced chemical vapor deposition (PE-CVD). Control of deposition conditions and monitoring of plasma with its products result in high reproducibility of thin films. The last part of the thesis describes the results of measurement of the first group of samples and their ellipsometric, mass spectrometry and FT-IR evaluation with respect to the deposition conditions.
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Orlandi, Francesco. "Applicazione e Confronto di Modelli Computazionali Turbolenti per l'Analisi dei Fenomeni Fluidodinamici in Camera di Reazione di una Sorgente di Plasma Termico di Tipo ICP-RF per la Produzione di Nanoparticelle." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019.

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Il presente studio è stato realizzato per operare un confronto, in ambito CFD, tra diversi modelli di turbolenza applicati a una geometria ridotta di torcia al plasma industriale di tipo ICP-RF, basato sul modello PL-35 di Tekna Inc. Lo studio è stato svolto all’interno del software FLUENT utilizzando delle UDF per caratterizzare le proprietà termofisiche del plasma. Il primo metodo utilizzato è un k-epsilon modificato secondo Bolot, dal quale, dopo aver validato i campi delle grandezze caratteristiche e l’attendibilità dei risultati sulla base di studi precedenti, si è ottenuto un campo simmetrico e ben delineato di turbolenza stazionaria. Il confronto con un k-epsilon standard ha chiarito il fondamentale apporto del termine sorgente aggiuntivo di Bolot per modellare correttamente la turbolenza e fornire il giusto campo di temperatura. Si sono poi utilizzati due metodi LES, WALE e Dinamico, e confrontati i risultati. La fiamma di plasma è risultata più verosimilmente realistica ma i campi di temperatura sono risultati troppo elevati nella regione a più alta temperatura, ovvero in ingresso in camera di reazione. I LES fino all’entrata in camera di reazione risultano concordi col modello k-epsilon ma successivamente la modellazione del fenomeno turbolento porta ad una elevata dissipazione di energia cinetica turbolenta che porta a valori del campo di temperatura troppo elevati. L’utilizzo invece del k-omega e del RSM, che hanno fornito campi completamente irrealistici, ha dimostrato l’inutilità di utilizzare tali metodi per sistemi simili data l’inadeguatezza dei suddetti modelli per tali sistemi. Il confronto dei modelli LES col k-epsilon rende necessario la modifica di tali modelli in un futuro per poter integrare gli effetti correttivi del termine sorgente di Bolot nel termine Cs di questi, in modo da poter unire la correttezza del modello k-epsilon con la risoluzione e il realismo tipico di questi modelli.
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Chang-WeiChen and 陳昶瑋. "Microwave Plasma CVD Nanodiamond and Its Application to RF MEMS Capacitive Switches." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/02237981579789795565.

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碩士
國立成功大學
微電子工程研究所碩博士班
98
In this research, we deposit nanodiamond films by Microwave Plasma Chemical Vapor Deposition. Nanodiamond used as dielectric layer of RF MEMS capacitive switches. The major problem need to be solved is charging effect, and it also limit the life time of switches. After operation many times, switches would induce pull-in voltage shift and stiction problem. We use nanodiamond films as dielectric material to prevent the charging effect of switches. We controlled graphite phase concentration of nanodiamond films by using different growth conditions to lower dc resistivity. It can allow charges to escape from dielectric layers quickly and increase the reliability of switches. In order to find the best growth condition of nanodiamond films for switches, we analyzed nanodiamond films by some equipment, including Raman spectrum, Scanning Electron Microscope and Atomic Force Microscope..We fabricated MIM capacitors by Si3N4 and nanodiamond to perform DC measurement and transient current measurements. We designed four structures of RF MEMS capacitive switches and analyzed their pull-in voltage and capacitance ratio by C-V measurement. Additionally, we discussed about actuation properties and charging effect of switches with Si3N4 and nanodiamond as dielectric, respectively.
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Conference papers on the topic "RF Plasma CVD"

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Vikharev, A. "Investigation of the Millimeter-Wave Plasma Assisted CVD Reactor." In HIGH ENERGY DENSITY AND HIGH POWER RF: 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158797.

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Jiang, Jie, and Chen Z. Liu. "Diamond-like carbon thin films prepared by rf-plasma CVD." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47311.

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Takechi, Kazushige, Hiroyuki Uchida, Hiroshi Hayama Akira Kodama, and Yoshimi Watabe. "A-Si:H TFTs Fabricated with Gated rf-discharge Plasma-CVD Technology." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.lc-8.

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ATAEV, B. M., A. M. BAGAMADOVA, I. K. KAMILOV, V. V. MAMEDOV, A. K. OMAEV, and S. SH MAKHMUDOV. "LOW-TEMPERATURE CVD GROWTH OF ZnO FILMS STIMULATED BY RF-DISCHARGE PLASMA." In Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0032.

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Ha, Peter C. T., D. R. McKenzie, M. M. M. Bilek, E. D. Doyle, and P. K. Chu. "Intrinsic Stress of DLC Film Prepared by RF Plasma CVD and Filteredcathodic ARC PVD." In IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science. IEEE, 2005. http://dx.doi.org/10.1109/plasma.2005.359498.

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Ikeda, Kishimoto, Hirose, and Numasawa. ""TOP-PECVD": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma." In Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307362.

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Hiramatsu, M., K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori, and T. Goto. "Diamond film formation using RF plasma CVD assisted by water vapor enhanced hydrogen radical source." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531623.

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Rivero III, Jose. "CNT Metamaterial Fabrication 3D Printing Mask Process." In MME Undergraduate Research Symposium. Florida International University, 2022. http://dx.doi.org/10.25148/mmeurs.010567.

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The demand for clean energy is rising with the global population. Renewable energy sources, such as solar, will play a key role in the years ahead. Solar energy has a key problem with energy storage as the energy produced during peak solar hours must be used immediately or stored. Carbon Nanotubes (CNTs) have unique electrostatic properties, similar to metals, capable of producing and storing electric energy in the form of a capacitor. The CNTs are to be arranged in a pattern using 3D printing to generate a Split Ring Resonator (SRR) metamaterial. Past research has shown generating CNT SRR patterns is possible using a Focused Ion Beam (FIB). FIB allows for limited sample size to be patterned for CNT growth. On the other hand, 3D printed shadow masks enable SRR patterns on a larger sample size. Today’s 3D printing technology cannot achieve the same resolution as FIB patterning yet are capable of producing larger samples. In the present research, a 3D model of a shadow mask with the desired SRR pattern was created using Fusion 360 and printed using Phrozen Sonic Mini 8K 3D printer. For the CNT synthesis process, first, heat-treated Silicon Oxide substrate was placed into a RF magnetic sputtering to deposit the first catalyst film of Aluminum Oxide using Argon plasma. The sample then was removed from the chamber to place the mask on and placed back in to sputter an Iron catalyst layer. The sample was then taken to a thermal catalytic chemical vapor deposition (CVD) chamber in which it was annealed to 730° C and afterwards exposed to acetylene gas to generate CNTs.
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Ravera, G. L., S. Ceccuzzi, A. Cardinali, R. Cesario, F. Mirizzi, G. Schettini, and A. A. Tuccillo. "Thin CVD-diamond RF Pill-Box vacuum windows for LHCD systems." In RADIOFREQUENCY POWER IN PLASMAS: Proceedings of the 20th Topical Conference. American Institute of Physics, 2014. http://dx.doi.org/10.1063/1.4864592.

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Mostaghimi, Javad, Sanaz Arabzadeh Esfarjani, Seth Dworkin, Benoit Simard, Keun Su Kim, Gervais Soucy, and Ali Shahverdi. "CFD Simulation of Single-walled Carbon Nanotube Growth in an RF Induction Thermal Plasma Process." In 42nd AIAA Plasmadynamics and Lasers Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2011. http://dx.doi.org/10.2514/6.2011-3600.

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