Journal articles: 'RF high power amplifiers'

1

Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measures 73 percent efficiency of output of RF generator at 13.56MHZ and 478W output from DE375 MOSFET. The main reasons of power dissipation mainly are analyzed, and some measures are taken to improve them by the optimization principles and experimental results and the efficiency of the power output can reach above 70 percent.

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2

Gao, S. "High-efficiency class-F RF/microwave power amplifiers." IEEE Microwave Magazine 7, no. 1 (February 2006): 40–48. http://dx.doi.org/10.1109/mmw.2006.1614233.

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Jaehyok Yi, Youngoo Yang, Myungkyu Park, Wonwoo Kang, and Bumman Kim. "Analog predistortion linearizer for high-power RF amplifiers." IEEE Transactions on Microwave Theory and Techniques 48, no. 12 (2000): 2709–13. http://dx.doi.org/10.1109/22.899034.

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Vasic, Miroslav, Oscar Garcia, Jesus Angel Oliver, Pedro Alou, Daniel Diaz, and Jose Antonio Cobos. "Multilevel Power Supply for High-Efficiency RF Amplifiers." IEEE Transactions on Power Electronics 25, no. 4 (April 2010): 1078–89. http://dx.doi.org/10.1109/tpel.2009.2033186.

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Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

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Karsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim, and Mehmet Bozdogan. "High power RF operations studies at TARLA facility." Canadian Journal of Physics 97, no. 11 (November 2019): 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.

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Turkish Accelerator and Radiation Laboratory (TARLA) is a facility capable of accelerating an electron beam up to 40 MeV. Two beamlines were proposed to generate free-electron laser radiation and bremsstrahlung. The accelerator employs two normal conducting cavities, so-called buncher cavities: subharmonic buncher (SHB) and fundamental buncher (FB), and two cryomodules that house two TESLA cavities each. SHB operates in 260 MHz and FB in 1.3 GHz, and is powered by 1.5 kW and 500 W radio frequency (RF) amplifiers, respectively. Each TESLA cavity is driven by 18 kW saturated high-power solid-state amplifiers (SSA). In addition, a L band pulse compressor system is designed and implemented at the facility to actively promote high-power RF research. Currently, setup of a resonant ring test bench is approved to test the RF components under high power RF conditions. This paper describes the TARLA high power RF, RF controller, and network structures. High power tests and measurements of the RF components of the TARLA beamline are given. Outcomes from the operation of the L band pulse compressor are explained, and the resonant ring test stand is stated as a summary.

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Ortega-González, Francisco Javier. "New driver for high-efficiency switching RF power amplifiers." Microwave and Optical Technology Letters 43, no. 5 (October 5, 2004): 370–72. http://dx.doi.org/10.1002/mop.20472.

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Stopel, Alon, Mark Leibovitch, and Yoram Shapira. "Nonuniform RF Overstress in High-Power Transistors and Amplifiers." IEEE Transactions on Electron Devices 55, no. 4 (April 2008): 1067–73. http://dx.doi.org/10.1109/ted.2008.916719.

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Reveyrand, T., I. Ramos, and Z. Popović. "Time-reversal duality of high-efficiency RF power amplifiers." Electronics Letters 48, no. 25 (December 6, 2012): 1607–8. http://dx.doi.org/10.1049/el.2012.3004.

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (January 5, 2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

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11

Eroglu, A. "N-way planar high-power combiner design for RF power amplifiers." IET Science, Measurement & Technology 2, no. 2 (March 1, 2008): 61–67. http://dx.doi.org/10.1049/iet-smt:20070033.

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12

Sriram, S., A. Ward, J. Henning, and S. T. Allen. "SiC MESFETs for High-Frequency Applications." MRS Bulletin 30, no. 4 (April 2005): 308–11. http://dx.doi.org/10.1557/mrs2005.79.

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AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

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Radivojevic, Z., K. Andersson, J. A. Bielen, P. J. van der Wel, and J. Rantala. "Operating limits for RF power amplifiers at high junction temperatures." Microelectronics Reliability 44, no. 6 (June 2004): 963–72. http://dx.doi.org/10.1016/j.microrel.2004.02.014.

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14

Ozen, Mustafa, Rik Jos, Christer M. Andersson, Mustafa Acar, and Christian Fager. "High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 59, no. 11 (November 2011): 2931–42. http://dx.doi.org/10.1109/tmtt.2011.2163729.

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15

Guan, Lei, Ray Kearney, Chao Yu, and Anding Zhu. "High-performance digital predistortion test platform development for wideband RF power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 2 (March 11, 2013): 149–62. http://dx.doi.org/10.1017/s1759078713000184.

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In this paper, a complete design procedure, together with robust system validation approaches, is presented for implementing a high-performance re-configurable digital predistortion (DPD) test platform for compensating for nonlinear distortion and memory effects induced by radio frequency (RF) power amplifiers (PAs) in the transmitters of modern wireless communication systems. This hardware and software co-operated test system not only enables effective validation for DPD algorithm development, but also provides a high-performance and reliable hardware-based linearization test platform. The experimental test was applied on a medium power Doherty amplifier, which was designed for 3 G/4 G wireless communication base stations. By applying our DPD algorithms on the proposed platform, more than 30 dB improvements in adjacent channel power ratio can be achieved for Universal Mobile Telecommunications System and long-term evolution signal excitations.

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Landin, Per N., Kurt Barbé, Wendy Van Moer, Magnus Isaksson, and Peter Händel. "Two novel memory polynomial models for modeling of RF power amplifiers." International Journal of Microwave and Wireless Technologies 7, no. 1 (April 2, 2014): 19–29. http://dx.doi.org/10.1017/s1759078714000397.

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Two novel memory polynomial models are derived based on physical knowledge of a general power amplifier (PA). The derivations are given in detail to facilitate derivations of other model structures. The model error in terms of normalized mean square error (NMSE) and adjacent channel error power ratio (ACEPR) of the novel model structures are compared to that of established models based on the number of parameters using data measured on two different amplifiers, one high-power base-station PA and one low-power general purpose amplifier. The novel models show both lower NMSE and ACEPR for any chosen number of parameters compared to the established models. The low model errors make the novel models suitable candidates for both modeling and digital predistortion.

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17

Mohadeskasaei, Seyed Alireza, Jianwei An, Yueyun Chen, Zhi Li, Sani Umar Abdullahi, and Tie Sun. "Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers." ETRI Journal 39, no. 1 (February 1, 2017): 51–61. http://dx.doi.org/10.4218/etrij.17.0116.0440.

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18

Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

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This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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Rymanov, V., M. Palandöken, S. Dülme, T. Tekin, and A. Stöhr. "Compact Photonic Package for High-Power E-Band (60–90 GHz) Photoreceiver Modules." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000883–86. http://dx.doi.org/10.4071/isom-2013-thp43.

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In this work, we present a novel photonic package for high-power photoreceiver modules operating within the E-band (60–90 GHz). The developed Kovar package features a compact size of only 6×3.5×2 cm3 and comprises an optical single-mode fiber (SMF) input, DC bias supply connections and a WR-12 output for coupling out of the radio frequency (RF) signal. As integration platform, a RF laminate submount with implemented planar bias-T based upon grounded coplanar waveguide (GCPW) transmission line circuitry is used for efficient mmW propagation, concluding in a GCPW-to-WR-12-transition. Finite element method (FEM) simulations have been carried out to analyze the frequency range of interest. Besides applied adhesive and wire bonding approaches for assembly inside the package, the RF submount exhibits sections for hybrid integration of single components, e.g. of a high-frequency waveguide photodiode. Optionally, up to two high-electron-mobility-transistor (HEMT) power amplifiers can be integrated within the GCPW circuitry. In addition, the RF laminate is mounted on a brass platform. For uniform thermal expansion within the module, a Peltier element is integrated. Concerning the saturation output power of given HEMT amplifiers, e.g. in the order of +17.5 dBm, corresponding power levels are achievable for packaged devices. For instance, an output RF power of only −19.5 dBm within the 71–76 GHz band is required from the photodiode in conjunction with two cascaded HEMT amplifiers, which results in a total gain of ~37 dB. A small series of the introduced device has been already fabricated. First experimental achievements with in-house fabricated modules will be presented.

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20

Watkins, Gavin T., and Konstantinos Mimis. "High linearity lead-lag style envelope modulator for RF power amplifiers." International Journal of Microwave and Wireless Technologies 8, no. 3 (April 1, 2015): 463–70. http://dx.doi.org/10.1017/s1759078715000525.

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A new split frequency envelope modulator for envelope tracking radio-frequency power amplifiers is proposed based on a lead-lag network. By mathematically deriving the transfer functions of the lead-lag modulator and the conventional split frequency type, the lead-lag is shown to have a significantly flatter phase response. The frequency response of the two modulators is verified by simulation, where the phase transient of the lead-lag is significantly less than the 360° of the conventional type. They are further simulated with a 3 MHz bandwidth 3GPP long-term evolution (LTE) signal and the lead-lag shown to reduce the modulator's normalized root-mean-square error (NRMSE) from −27.3 to −39.2 dB. A practical demonstrator was developed around an existing high-efficiency modulator architecture. To maintain system efficiency synthetic impedance was incorporated in the low-frequency switched mode power supply (SMPS) path. This was achieved with voltage and current feedback around the SMPS. The dynamic wideband signal response was investigated by applying a 3 MHz LTE envelope signal to the modulator and comparing the input and output signals. The measured NRMSE was improved from −27.5 to −30.0 dB by adopting the lead-lag structure and the dynamic frequency response verifies correct operation.

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Stopel, A., A. Khramtsov, S. Solodky, A. Fainbrun, and Yoram Shapira. "Direct Monitoring of RF Overstress in High-Power Transistors and Amplifiers." IEEE Electron Device Letters 28, no. 5 (May 2007): 357–59. http://dx.doi.org/10.1109/led.2007.895437.

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22

Kobayashi, H., J. M. Hinrichs, and P. M. Asbeck. "Current-mode class-D power amplifiers for high-efficiency RF applications." IEEE Transactions on Microwave Theory and Techniques 49, no. 12 (2001): 2480–85. http://dx.doi.org/10.1109/22.971639.

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23

Aloisio, Marinella, Piero Angeletti, and Salvatore D'Addio. "Accurate Modeling and Analysis of Isolation Performance in Multiport Amplifiers." Active and Passive Electronic Components 2012 (2012): 1–4. http://dx.doi.org/10.1155/2012/738367.

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A Multiport Amplifier (MPA) is an implementation of the satellite power amplification section that allows sharing the payload RF power among several beams/ports and guarantees a highly efficient exploitation of the available DC satellite power. This feature is of paramount importance in multiple beam satellite systems where the use of MPAs allows reconfiguring the RF output power among the different service beams in order to handle unexpected traffic unbalances and traffic variations over time. This paper presents Monte Carlo simulations carried out by means of an ESA in-house simulator developed in Matlab environment. The objective of the simulations is to analyse how the MPA performance, in particular in terms of isolation at the MPA output ports, is affected by the amplitude and phase tracking errors of the high power amplifiers within the MPA.

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Ali, Firas M., Mahmuod H. Al-Muifraje, and Thamir R. Saeed. "An Analytic Design Approach to Inverse Class-F RF Power Amplifiers." Engineering and Technology Journal 38, no. 2A (February 25, 2020): 211–25. http://dx.doi.org/10.30684/etj.v38i2a.301.

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The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

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Ahmed, Sajjad, Mohammad Saad El Dine, Guillaume Neveux, Tibault Reveyrand, Denis Barataud, and Jean-Michel Nebus. "4-Channel, time-domain measurement system using track and hold amplifier for the characterization and linearization of high-power amplifiers." International Journal of Microwave and Wireless Technologies 4, no. 1 (November 17, 2011): 71–79. http://dx.doi.org/10.1017/s1759078711000973.

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We propose in this paper a 4-channel time-domain test bench for the characterization and linearity enhancement of microwave power amplifiers (PAs). The proposed time-domain measurement system utilizes four track and hold amplifiers (THAs) for direct subsampling of radiofrequency (RF) signals. The use of wideband THAs to replace samplers or mixers enables reducing analog IF circuit complexity. It permits direct digitization of RF signals like CW, two-tone and pulsed modulated signals, bringing more flexibility in the receiver's performance by enhancing the dynamic range and bandwidth. This test bench is capable of completely extracting the phase, amplitude, and transfer characteristics of non-linear devices excited with CW or modulated RF signals. In this work, two-tone transfer characteristics of a 50 W GaN HEMT Nitronex PA were extracted and processed for applying digital pre-distortion linearization to enhance linearity performance. Time-domain envelope and carrier waveforms (voltage and current) along with third-order inter-modulation distortion (IMD) products with and without digital pre-distortion scheme are also presented.

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SCHLECHTWEG, M. "HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 393–411. http://dx.doi.org/10.1142/s0129156400000404.

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For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.

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Besombes, Florent, Raphaël Sommet, Julie Mazeau, Edouard Ngoya, and Jean-Paul Martinaud. "Implementation of electrothermal system-level model for RF power amplifiers in Scilab/Scicos environment." International Journal of Microwave and Wireless Technologies 1, no. 6 (December 2009): 489–95. http://dx.doi.org/10.1017/s1759078709990602.

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This paper presents a behavioral electrothermal model implementation for high RF power amplifiers dedicated to the simulation of radar application in the Scilab/Scicos environment. This model, based on the direct coupling between a behavioral electrical model and a physics-based reduced thermal model, allows to predict nonlinear effects, high-frequency memory effects, and thermal effects due to the amplifier self-heating. System model implementation in Scilab/Scicos platform allows fast time domain simulation with very good convergence properties.

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Nam, Hyosung, Taejoo Sim, and Junghyun Kim. "A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators." Electronics 9, no. 9 (August 26, 2020): 1378. http://dx.doi.org/10.3390/electronics9091378.

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This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper–tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz.

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Zhang, Xiangyin, Xiaodong Zhu, Ying Liu, and Youxi Tang. "A High-Accuracy Metric for Predicting the Power De-Rating of RF Power Amplifiers." IEEE Microwave and Wireless Components Letters 25, no. 5 (May 2015): 346–48. http://dx.doi.org/10.1109/lmwc.2015.2409983.

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Mimis, Konstantinos, and Gavin Tomas Watkins. "Impact of time misalignment and input signal statistics in dynamically load-modulated amplifiers." International Journal of Microwave and Wireless Technologies 7, no. 3-4 (June 2015): 327–37. http://dx.doi.org/10.1017/s1759078715000914.

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The effect of time misalignment between the radiofrequency (RF) input and tunable matching network control signal in dynamically load-modulated power amplifiers (Pas) is investigated in theory and practice. Moreover, the impact of different input signal statistics is considered. A simple amplifier model is used for the study, based on which the impact on output power, efficiency, and linearity is explored with various generic multi-tone signals. Furthermore, to experimentally verify the results, a 10 W dynamically load-modulated RF PA is measured. As expected, proper synchronization of the signals is crucial, especially as channel bandwidth increases. Additionally, it is shown that the input signal characteristics, such as the amplitude distribution, are important. Moreover, the prototype RF PA is measured with a 1.4 MHz long-term evolution (LTE) signal delivering an average output power of 33.9 dBm with 46% efficiency. Finally, high efficiency and linearity is maintained over output power by scaling the drain supply voltage.

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Kwak, Myoungbo, Donald F. Kimball, Calogero D. Presti, Antonino Scuderi, Carmelo Santagati, Jonmei J. Yan, Peter M. Asbeck, and Lawrence E. Larson. "Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 60, no. 6 (June 2012): 1850–61. http://dx.doi.org/10.1109/tmtt.2012.2184128.

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32

Cripps, S. C., P. J. Tasker, A. L. Clarke, J. Lees, and J. Benedikt. "On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers." IEEE Microwave and Wireless Components Letters 19, no. 10 (October 2009): 665–67. http://dx.doi.org/10.1109/lmwc.2009.2029754.

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Chung, S., R. Ma, and K. H. Teo. "Design considerations on wideband envelope termination for high efficiency RF power amplifiers." Electronics Letters 52, no. 6 (March 2016): 460–62. http://dx.doi.org/10.1049/el.2015.4328.

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34

Mathew Oduka, Ugbede, and Felix Kelechi Opara. "Design of a high power, energy efficient RF inverse class F power amplifier using GaN HEMT." International Journal of Academic Research 5 (October 15, 2013): 162–67. http://dx.doi.org/10.7813/2075-4124.2013/5-5/a.23.

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35

Kühn, Jutta, Markus Musser, Friedbert van Raay, Rudolf Kiefer, Matthias Seelmann-Eggebert, Michael Mikulla, Rüdiger Quay, Thomas Rödle, and Oliver Ambacher. "Design and realization of GaN RF-devices and circuits from 1 to 30 GHz." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 115–20. http://dx.doi.org/10.1017/s175907871000019x.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

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BACHIR, SMAIL, NICUSOR CALINOIU, and CLAUDE DUVANAUD. "LINEARIZATION OF RF POWER AMPLIFIERS USING ADAPTIVE KALMAN FILTERING ALGORITHM." Journal of Circuits, Systems and Computers 20, no. 06 (October 2011): 1001–18. http://dx.doi.org/10.1142/s0218126611007724.

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In this paper, a new linearization algorithm of power amplifier (PA), based on Kalman filtering theory is proposed for obtaining fast convergence of the adaptive digital predistortion. The proposed method uses the real-time digital processing of baseband signals to compensate the nonlinearities and memory effects in radio-frequency power amplifier. To reduce the complexity of computing in classical Kalman filtering, a sliding time-window has been inserted which combines offline measurement and online parameter estimation with high sampling time to track the changes in the PA characteristics. The performance of the proposed linearization scheme is evaluated through simulation and experiments. Using digital signal processing, experimental results with commercial power amplifier are presented for multicarrier signals to demonstrate the effectiveness of this new approach.

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Gao, Huai, Haitao Zhang, Huinan Guan, Li-Wu Yang, and G. P. Li. "A compact composite transistor as a novel RF power cell for high-linearity power amplifiers." Microwave and Optical Technology Letters 45, no. 6 (2005): 483–85. http://dx.doi.org/10.1002/mop.20859.

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Kim, Seung-Yong, and Choong-Mo Nam. "RF High Power Amplifier Module using AlN Substrate." Journal of the Korean Institute of Electrical and Electronic Material Engineers 22, no. 10 (October 1, 2009): 826–31. http://dx.doi.org/10.4313/jkem.2009.22.10.826.

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Diet, A., M. Villegas, and G. Baudoin. "EER–LINC RF transmitter architecture for high PAPR signals using switched power amplifiers." Physical Communication 1, no. 4 (December 2008): 248–54. http://dx.doi.org/10.1016/j.phycom.2008.11.001.

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Upadhyay, R., M. K. Badapanda, A. Tripathi, and M. Lad. "Low voltage high current modular DC power supply for solid state RF amplifiers." Journal of Instrumentation 16, no. 03 (March 4, 2021): P03010. http://dx.doi.org/10.1088/1748-0221/16/03/p03010.

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Bhuiyan, Mohammad Arif Sobhan, Md Torikul Islam Badal, Mamun Bin Ibne Reaz, Maria Liz Crespo, and Andres Cicuttin. "Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview." Electronics 8, no. 5 (April 29, 2019): 477. http://dx.doi.org/10.3390/electronics8050477.

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Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency (RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to the required output power. The signal is amplified to make it sufficiently high for the transmitter to propagate the required distance to the receiver. Attempted advancements of PA have focused on attaining high-performance RF signals for transmitters. Such PAs are expected to require low power consumption while producing a relatively high output power with a high efficiency. However, current PA designs in nanometer and micrometer complementary metal–oxide semiconductor (CMOS) technology present inevitable drawbacks, such as oxide breakdown and hot electron effect. A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and medical) band applications.

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Yang, Hsin Chia, and Mu Chun Wang. "Extensive 6.0-18.0 GHz Frequency Low Noise Amplifiers Integrated to Form LC-Feedback Oscillators." Advanced Materials Research 225-226 (April 2011): 1075–79. http://dx.doi.org/10.4028/www.scientific.net/amr.225-226.1075.

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Low Voltage supplied radio-frequency (RF) CMOS devices by TSMC 0.18 micron process are used for the RF circuit designs of low noise amplifiers. Three components, low noise amplifiers (LNA), Class-E power amplifiers (PA), and LC oscillator simultaneously working at 6.0 to 18.0 GHz, are explored. The scenario combining two matched amplifiers, LNA and PA, and then amplifying the coupled signals from the oscillators is proven to be working. LNA usually runs prior to PA to suppress the noises, and thus the whole set functions like an integrated LNA, whose forward gain may be promoted as high as at least over 40 dB just as expected. At 6.0, 12.0 and 18.0 GHz, magnitudes of both S11 and S22 in the Smith Chart are deliberately tuned to approach to zero as shown. And Noise Figure determined to be 1.175 gives promising integrated circuit.

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Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, and Edward Yi Chang. "The Evolution of Manufacturing Technology for GaN Electronic Devices." Micromachines 12, no. 7 (June 23, 2021): 737. http://dx.doi.org/10.3390/mi12070737.

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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Fehri, Bilel, and Slim Boumaiza. "Application of embedding dimension estimation to Volterra series-based behavioral modeling and predistortion of wideband RF power amplifier." International Journal of Microwave and Wireless Technologies 5, no. 2 (February 7, 2013): 115–22. http://dx.doi.org/10.1017/s1759078713000056.

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This paper expounds the systematic modeling of the behavior of radio frequency (RF) power amplifiers (PAs) exhibiting nonlinear, dynamic behavior. The approach begins with an analysis of the PA output signal to deduce the minimum embedding parameters required to accurately model its response, particularly the nonlinearity order and memory effects depth. The knowledge of the RF PA is then exploited in limiting the number of kernels consequently addressing the complexity of the Volterra series which has been the key hindrance to its wider practical adoption. In the proposed Volterra series model, performance is assessed and compared to memory polynomial model and dynamic deviation reduction Volterra models when used to linearize different high-power amplifiers driven with wideband signals of bandwidth up to 40 MHz. Significant linearization performance is achieved using a reduced number of kernels.

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M. A. Eid, Mahmoud, Ashraf S. Seliem, Ahmed Nabih Zaki Rashed, Abd El-Naser A. Mohammed, Mohamed Yassin Ali, and Shaimaa S. Abaza. "Duobinary modulation/predistortion techniques effects on high bit rate radio over fiber systems." Indonesian Journal of Electrical Engineering and Computer Science 21, no. 2 (February 1, 2021): 978. http://dx.doi.org/10.11591/ijeecs.v21.i2.pp978-986.

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<span>The work has presented duobinary modulation and predistortion techniques for the radio over fiber system enhancement for achieving security level. Duobinary modulation technique has more compact modulated spectral linewidth with standard non return to zero modulation code. Different NRZ/RZ rectangle shape employed that are namely exponential rectangle shape (ERS), and Gaussian rectangle shape (GRS) for different transmission bit rates. Switching bias voltage, and switching RF voltage based LiNbO<sub>3</sub> modulator are changed to measure the performance parameters of the radio over fiber (RoF) system. Predistortion technique improves the linearity of transmitter amplifiers and it is considered as a power efficiency technique. The optimum values of the Q-factor, data error rate (BER), electrical power, signal gain, noise figure, and light signal/noise ratio are achieved with 8 Volt for both switching biases/switching RF signal at 100 GHz. Signal quality/BER and electrical power after the receiver enhancement ratio by using this technique at different RF signal frequencies. </span>

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Gracia Sáez, Raúl, and Nicolás Medrano Marqués. "LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output." Electronics 8, no. 11 (November 1, 2019): 1260. http://dx.doi.org/10.3390/electronics8111260.

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In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design.

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Hühn, Florian, Andreas Wentzel, and Wolfgang Heinrich. "A new modulator for digital RF power amplifiers utilizing a wavetable approach." International Journal of Microwave and Wireless Technologies 9, no. 6 (July 2017): 1251–60. http://dx.doi.org/10.1017/s1759078717000770.

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This paper presents for the first time a wavetable-based coding scheme to generate a high-speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time domain handling capabilities of the pulse forming circuit. Key features are a greatly improved output spectrum purity in comparison with common digital modulators, the ability to adjust the modulator to any given pulse forming hardware and a built-in signal correction option that comes without additional computational cost. To give a first impression on the modulators behavior and its possibilities to adapt to different hardware constraints, simulations are carried out for different parameter variations and for different baseband bandwidths. Furthermore, the proposed concept is emulated with an arbitrary waveform generator to gather additional measurement data. For a 5 MHz wideband code division multiple access (WCDMA) signal (6.5 dB peak-to-average power ratio) at 900 MHz, an error vector magnitude (EVM) of 0.26% and better than >58 dB adjacent channel leakage ratio (ACLR) were recorded. To the authors’ knowledge, these are the best values achieved so far for a single-bit coding scheme without digital predistortion that still maintains maximum power coding efficiency.

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Sarker, Md, and Ickhyun Song. "Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology." Electronics 9, no. 5 (May 8, 2020): 772. http://dx.doi.org/10.3390/electronics9050772.

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For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

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Oppermann, M., K. Widmer, R. Reber, H. Sledzik, P. Schuh, U. Schmid, B. Bunz, S. Chartier, K. Drüeke, and M. Bedenbecker. "GaN based RF Modules - Demands & Needs for Packaging." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000896–99. http://dx.doi.org/10.4071/isom-2011-tha1-paper4.

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GaN/SiC based powerbars and MMICs are the youngest semiconductor devices which have arrived in the field of Radio Frequency modules and applications, e.g. radar, communication links and high power transmitters and amplifiers. Nearly 5 years ago, the first GaN devices were used in the fields of telecommunication equipment, mainly in base-station amplifiers and today GaN devices are more and more part of modern radar applications, like T/R (Transmit/Receive) modules in AESA (Active Electronically Scanned Array) antennas. The main advantages of GaN/SiC semiconductor devices in comparison to GaAs-devices are the higher bandwidth, higher robustness level and the higher operation voltage. Another big issue of GaN is the higher power density, with in minimum 4 times higher values compared to GaAs. Therefore the assembly of GaN MMICs and powerbars on heatsinks and module-baseplates is a big challenge for soldering technology. An absolute minimum of voids between backside of the GaN/SiC devices and the heatsink is necessary to guarantee an optimised heat transfer during operation. Different package materials and technologies are on the market and big international package suppliers deal with new material combinations, like sandwich structures of Cu and Mo. Materials like Al-diamond are used for heatsink materials and with special tests and measurements the results of heat transfer studies will be shown. In this paper examples of power amplifiers, operating in the frequency range of 2–6 GHz and 6–18GHz, and a typical X-Band Frontend will be shown and the RF results will be discussed.

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El-Hamamsy, S. A. "Design of high-efficiency RF Class-D power amplifier." IEEE Transactions on Power Electronics 9, no. 3 (May 1994): 297–308. http://dx.doi.org/10.1109/63.311263.

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Journal articles on the topic 'RF high power amplifiers'

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