Dissertations / Theses on the topic 'RF high power amplifiers'
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Srirattana, Nuttapong. "High-Efficiency Linear RF Power Amplifiers Development." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6899.
Full textKim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.
Full textYahyavi, Mehran. "On the design of high-efficiency RF Doherty power amplifiers." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/398236.
Full textLos amplificadores de potencia (PAs) son uno de los elementos más importantes para los transmisores inalámbricos desde el punto de vista del consumo energético. Un aspecto muy importante es su eficiencia energética, un concepto relacionado con el back-off de salida (OBO), que a su vez viene condicionadpo por el PAPR de la señal modulada a amplificar. Una baja eficiencia de los PA hace que la pérdida de energía se manifieste en forma de calor. De hecho, esta cuestión conduce al incremento de los costes y tamaño, esto último por los radiadores. Además, el compromiso entre la linealidad y la eficiencia en los PA es otro problema importante. Para hacer frente a las circunstancias que producen la degradación de la eficiencia, el amplificador de potencia tipo Doherty (DPA) es una de las técnicas más útiles que proporcionan una buena eficiencia incluso para los altos PAPR comunes en señales de comunicación modernos. Sin embargo, el limitado ancho de banda (BW) de este tipo de PA (alrededor del 10% del ancho de banda fraccional) y su importancia (en los sistemas inalámbricos modernos, tales como LTE, WiMAX, Wi-Fi y sistemas de satélites) han animado a los investigadores para mejorar este inconveniente en los últimos años. Algunos aspectos típicos que limitan el BW en los DPA son: i) transformadores de longitud de cuarto de onda, ii) redes de compensación de fase y circuitos de adaptación de salida, iii) compensación de las líneas y los dispositivos no ideales. Los transformadores de cuarto de onda actuan como un inversor de impedancia en la técnica de modulación de carga de la DPA "("load modulation"). Concretamente, el objetivo futuro de diseño de DPA es disminuir el impacto de estos problemas. En este contexto, esta tesis doctoral se centra en mejorar el ancho de banda fraccional de DPA utilizando los nuevos métodos que están relacionados con el uso de transformadores de impedancias en vez de inversores en el subcircuito de modulación de carga. Este estudio tiene dos niveles. En primer lugar, se presenta una novedosa estructura del DPA de banda ancha usándose dispositivos de GaN en la banda de 2,5 GHz con un divisor Wilkinson asimétrico. El transformador de impedancias de la arquitectura propuesta se basa en una red de adaptación, incluyendo una línea cónica con múltiples secciones del transformador en la etapa principal. El BW de este DPA ha sido de 1,8 a 2,7 GHz. Además, se obtiene una eficiencia de drenador de más del 33% en todo el BW, tanto a nivel de potencia máxima como a nivel del OBO. En segundo lugar, aprovechando los beneficios de un adaptador de Klopfenstein, se propone un nuevo diseño del DPA. Con la sustitución de la lina conica por el Klopfenstein se reduce el coeficiente de reflexión de transformador de impedancias. Sobre un prototipo práctico de esta nueva estructura del Doherty, en la banda de 2,25 GHz, se ha demostrado que el BW resultante se incrementa en comparación con la topología convencional mientras se mantienen las cifras de eficiencia. Por otra parte, en este estudio se demuestra que el diseño basado en el Klopfenstein permite una afinación fácil del retardo de grupo a través de la reactancia de salida del taper, lo que resulta en un ajuste más sencillo que otros diseños publicados recientemente en el que el transformador de cuarto de onda se sustituye por multi-líneas de transmisión de la sección (híbridos o similar). Los resultados experimentales han mostrado un 43-54% de eficiencia de drenador sobre 42 dBm de potencia de salida, en el intervalo de 1,7 a 2,75 GHz. Concretamente, los resultados presentados en esta nueva estructura tipo-Doherty implican una técnica de modulación de carga que utiliza una combinación de un Klopfenstein junto con un transformador de múltiples secciones con el fin de obtener un alto ancho de banda con la eficiencia habitual en DPAs.
Els amplificadors de potència (PA) són un dels elements més importants per els sistemes ràdio ja que sone ls principals consumidors d'energía. Un aspecte molt important és l'eficiència de l'amplificador, aspecte relacionat amb el back-off de sortida (OBO) que a la seva vegada ve condicionat pel PAPR del senyal modulat. Una baixa eficiència dels PA fa que la pèrdua d'energia en manifesti en forma de calor. De fet, aquesta qüestió porta a l'increment dels costos i grandària, degut als dissipadors de calor. A més, el compromís entre la linealitat i l'eficiència en els PA es un altre problema important. Per fer front a les circumstàncies que porten a la degradació de l'eficiència, l'amplificador de potència Doherty (DPA) és una de les tècniques més útils i que proporcionen una bona eficiència per als alts PAPR comuns en senyals de comunicació moderns. No obstant això, l'ample de banda limitat (BW) d'aquest tipus de PA (al voltant del 10% de l'ample de banda fraccional) i la seva importància (en els sistemes moderns, com ara LTE, WiMAX, Wi-Fi i sistemes de satèl·lits) han animat els investigadors per millorar aquest inconvenient en els últims anys. Alguns aspectes tipicament limitadors del BW en els DPA son: i) transformadors de longitud d'quart d'ona, ii) xarxes de compensació de fase en circuits / adaptacions de sortida, iii) compensació de les línies i els dispositius no ideals. Els transformadors de quart d'ona s'utilitzen com a inversors d'impedàncies en la tècnica de modulació de càrrega del DPA ("load modulation"). Concretament, l'objectiu futur de disseny d'DPA és disminuir l'impacte d'aquests problemes. En aquest context, aquesta tesi doctoral es centra en millorar l'ample de banda fraccional dels DPA utilitzant nous mètodes que estan relacionats amb l'ús de transformadors d'impedàncies, en comptes d'inversors, en el subcircuit de modulació de càrrega. Aquest treball té dos nivells. En primer lloc, es presenta un DPA novedós que fa servir dispositus GaN DPA a la banda de 2,5 GHz amb un divisor Wilkinson asimètric. El transformador d'impedàncies de l'arquitectura proposada es basa en una xarxa d'adaptació, incloent una línia cònica amb múltiples seccions del transformador en l'etapa principal. El BW d'aquest DPA ha mostrat ser d'1,8 a a 2,7 GHz. A més, s'obté una eficiència de drenador de més del 33% en tot el BW, tant a nivell de potència màxima com de OBO. En segon lloc, sobre la base dels beneficis del adaptador de Klopfenstein, un proposa un nou disseny on un Klopfenstein substitueix la anterior línia cònica. Aquesta substitució repercuteix en la reducció del coeficient de reflexió de transformador d'impedàncies.Des d'una realització pràctica (prototipus) d'aquest nou amplificador tipus Doherty a la banda de 2,25 GHz, s'ha demostrat que el BW resultant s'incrementa en comparació amb la topologia convencional mentre es mantenen les xifres d'eficiència. D'altra banda, en aquest estudi es demostra que el disseny basat en el Klopfenstein permet una afinació fàcil del retard de grup a través de la reactància de sortida de la forma cònica, el que resulta en un ajust més senzill que altres dissenys publicats recentment en què el transformador de quart d'ona es substitueix per multi-línies de transmissió de la secció (híbrids o similar). Els resultats experimentals han mostrat un 43-54% d'eficiència de drenador en 42 dBm de potència de sortida, en l'interval de 1,7-2,75 GHz. Concretament, els resultats presentats en aquest nou amplificador tipus Doherty impliquen una tècnica de modulació de càrrega específic que utilitza una combinació del Klopfenstein juntament amb un transformador de múltiples seccions per tal d'obtenir un alt ample de banda amb la usual eficiència en DPAs.
Haapala, Linus, and Aleksander Eriksson. "RF High Power Amplifiers for FREIA – ESS : design, fabrication and measurements." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-263549.
Full textJang, Haedong. "NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.
Full textHietakangas, S. (Simo). "Design methods and considerations of supply modulated switched RF power amplifiers." Doctoral thesis, Oulun yliopisto, 2012. http://urn.fi/urn:isbn:9789514298363.
Full textTiivistelmä Tämä väitöstyö käsittelee radiotaajuuksilla toimivien käyttöjännitemoduloitujen kytkintehovahvistimien ominaisuuksia ja suunnittelumenetelmiä. Suunnittelumenetelmiin liittyvän katsauksen ja simulaatioihin perustuvan tutkimusten lisäksi kaksi vahvistinta toteutettiin väitöstutkimuksen aikana: diskreettikomponentein toteutettu E-luokan vahvistin (MESFET, 0.5 W ja 1 GHz) ja integroituna piirinä toteutettu käänteinen E-luokan vahvistin (pHEMT, 2.0 W ja 1.6 GHz), jonka lähdön resonaattoripiiri sisällytettiin integroituun piiriin. Kytkinvahvistimien suunnittelumenetelmiä verrattiin ja kehitettiin edelleen siten, että suunnitteluvaiheessa voidaan ottaa huomioon esim. transistoripiirin takaisinkytkennässä olevan kapasitanssin epälineaarisuus. Työssä tutkittiin myös käyttöjännitemodulaation vaikutusta kytkinvahvistimien toimintaan, ja tutkimuksen tuloksena annettiin muutamia ehdotuksia käyttöjänniteriippuvan amplitudi- (Vdd / AM) ja vaihemodulaation (Vdd / PM) vähentämiseksi. Lähdön biasointipiirin toteutukseen suositeltiin pienen kelan ja siirtolinjan yhdistelmää. Yhdistelmän avulla pyritään maksimoimaan modulaationopeus ja minimoimaan vaikutukset harmonisiin impedansseihin. Pääkohtina väitöksessä ovat E-luokan kytkinvahvistimesta saadut tutkimus- ja mittaushavainnot käyttöjännitteen funktiona muuttuvasta transistorin tuloimpedanssista sekä suurikokoisen transistorin tuloissa tapahtuvan, säröytymisen aiheuttaman tulosignaalien ajoitusvirheen analyysi. Näiden lisäksi vahvistimen stabiilisuuteen kiinnitettiin huomiota. Saatujen havaintojen perusteella voimme todeta, että push-pull -tyyppinen E-luokan vahvistin olisi mielenkiintoinen valinta jatkotutkimuksille
Woo, Wangmyong. "Hybrid Digital/RF Envelope Predistortion Linearization for High Power Amplifiers in Wireless Communication Systems." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6924.
Full textRefai, Wael Yahia. "A Linear RF Power Amplifier with High Efficiency for Wireless Handsets." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/25886.
Full textPh. D.
Rascher, Jochen [Verfasser]. "RF Switch Design for Reconfigurable Power Amplifiers with High Back-off Efficiency in nm-CMOS Technologies / Jochen Rascher." München : Verlag Dr. Hut, 2015. http://d-nb.info/1074063171/34.
Full textBook, Stefan. "1kW Class-E solid state power amplifier for cyclotron RF-source." Thesis, Uppsala universitet, FREIA, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341693.
Full textDehghan, Nelo. "High resolution electric field probes with applications in high efficiency RF power amplifier design." Thesis, Cardiff University, 2014. http://orca.cf.ac.uk/73139/.
Full textCui, Xian. "Efficient radio frequency power amplifiers for wireless communications." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1195652135.
Full textNoonan, James (James Keating). "The design of a high efficiency RF power amplifier for an MCM process." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/32103.
Full textThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 91-92).
In this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could realistically be adapted to the MCM process with possible performance enhancement.
by James Noonan.
M.Eng.
Hiemstra, Stephen Reza. "A High Temperature Wideband Power Amplifier for a Downhole Communication System." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/78387.
Full textMaster of Science
Mußer, Markus [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker." Freiburg : Universität, 2015. http://d-nb.info/1123482640/34.
Full textSerebryakova, Elena [Verfasser], Matthias [Akademischer Betreuer] Hein, Irina Gutachter] Vendik, and Georg [Gutachter] [Fischer. "High-Power Comb-Line Filter Architectures for Switched-Mode RF Power Amplifier Systems / Elena Serebryakova ; Gutachter: Irina Vendik, Georg Fischer ; Betreuer: Matthias Hein." Ilmenau : TU Ilmenau, 2013. http://d-nb.info/1178184587/34.
Full textMahdavi, Sareh. "RF power amplifiers and MEMS varactors." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=112576.
Full textThe power amplifier consumes most of the power in a receiver/transmitter system (transceiver), and its output signal is directly transmitted by the antenna without further modification. Thus, optimizing the PA for low power consumption, increased linearity, and compact integration is highly desirable.
Micro-electromechanical systems enable new levels of performance in radio-frequency integrated circuits, which are not readily available via conventional IC technologies. They are good candidates to replace lossy, low Q-factor off-chip components, which have traditionally been used to implement matching networks or output resonator tanks in class AB, class F, or class E power amplifiers. The MEMS technologies also make possible the use of new architectures, with the possibility of flexible re-configurability and tunability for multi-band and/or multi-standard applications.
The major effort of this thesis is focused on the design and fabrication of an RF frequency class AB power amplifier in the SiGe BiCMOS 5HP technology, with the capability of being tuned with external MEMS varactors. The latter necessitated the exploration of wide-tuning range MEMS variable capacitors, with prototypes designed and fabricated in the Metal-MUMPS process.
An attempt is made to integrate the power amplifier chip and the MEMS die in the same package to provide active tuning of the power amplifier matching network, in order to keep the efficiency of the PA constant for different input power levels and load conditions.
Detailed simulation and measurement results for all circuits and MEMS devices are reported and discussed.
Al-Tahir, Hibah. "Multidimensional Measurements : on RF Power Amplifiers." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-729.
Full textAbstract
In this thesis, a measurement system was set to perform comprehensive measurements on RF power amplifiers. Data obtained from the measurements is then processed mathematically to obtain three dimensional graphs of the basic parameters affected or generated by nonlinearities of the amplifier i.e. gain, efficiency and distortion. Using a class AB amplifier as the DUT, two sets of signals – both swept in power level and frequency - were generated to validate the method, a two-tone signal and a WCDMA signal. The three dimensional plot gives a thorough representation of the behavior of the amplifier in any arbitrary range of spectrum and input level. Sweet spots are consequently easy to detect and analyze. The measurement setup can also yield other three dimensional plots of variations of gain, efficiency or distortion versus frequencies and input levels. Moreover, the measurement tool can be used to plot traditional two dimensional plots such as, input versus gain, frequency versus efficiency etc, making the setup a practical tool for RF amplifiers designers.
The test signals were generated by computer then sent to a vector signal generator that generates the actual signals fed to the amplifier. The output of the amplifier is fed to a vector signal analyzer then collected by computer to be handled. MATLAB® was used throughout the entire process.
The distortion considered in the case of the two-tone signals is the third order intermodulation distortion (IM3) whereas Adjacent Channel Power Ratio (ACPR) was considered in the case of WCDMA.
Condo, Neira Edith Graciela. "Multidimensional Measurements on RF Power Amplifiers." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-804.
Full textMeasurements are important to specify and verify properties for components, modules and systems. The specifications for a certain figure of merit are usually given in a numerical value or a two dimensional plot. However, there are some devices, like power amplifiers with certain figure of merits that depends on two or more working conditions, requiring a three dimensional plot.
This thesis presents a measurement method including graphical user interface of three parameters gain, efficiency and distortion when two-tone or WCDMA signals are used as an input to the PA.
McRory, John Godfrey. "Stacked GaAs FET RF power amplifiers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0002/NQ31049.pdf.
Full textYousefzadeh, Vahid. "Digitally controlled power converters for RF power amplifiers." Diss., Connect to online resource, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3219220.
Full textGhazaany, Tahereh S. "Design and implementation of adaptive baseband predistorter for OFDM nonlinear transmitter. Simulation and measurement of OFDM transmitter in presence of RF high power amplifier nonlinear distortion and the development of adaptive digital predistorters based on Hammerstein approach." Thesis, University of Bradford, 2011. http://hdl.handle.net/10454/5680.
Full textKufa, Jan. "Výkonový zesilovač pro pásmo krátkých vln." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-220347.
Full textFritzin, Jonas. "CMOS RF Power Amplifiers for Wireless Communications." Doctoral thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71852.
Full textFIGUEIREDO, TIAGO NASCIMENTO DE. "BROADBAND RF POWER AMPLIFIERS FOR MULTIBAND TRANSCEPTORS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2012. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=22900@1.
Full textEste trabalho descreve o desenvolvimento completo de um Amplificador de Potência de RF para Transceptores Multibanda. Em sua etapa inicial mostra um apanhado geral da teoria de todos os parâmetros relevantes para a medida de desempenho desses dispositivos, como potência, ganho e parâmetros de não linearidades. Em seguida são expostas as teorias básicas para o entendimento dos mecanismos para extração da máxima potência de um transistor, focando nos transistores de efeito de campo FET, incluindo a caracterização para regimes de alta potência. São apresentados os modos de operação de um amplificador de potência, focando nos chamados modos clássicos, dado que esses modos são convenientes para operação em banda larga. Para a correta operação de qualquer dispositivo que apresente ganho, a análise de estabilidade é apresentada com o procedimento de estabilização de transistores. A partir de todo o apanhado teórico, é desenvolvida uma metodologia de projeto de amplificadores de potência utilizando a ferramenta de simulação computacional Advanced Design System. Então, após toda a modelagem do amplificador, a construção e medidas são realizadas e boa concordância com a simulação foi obtida.
This work describes the full development of a RF Power Amplifier for Multiband Transceivers. In its initial stage shows an overview of the theory of all relevant parameters to measure the performance of these devices, like power, gain and nonlinearity parameters. Then it exposes the basic theories for the understanding of the mechanisms for extracting the maximum power of a transistor, focusing on field effect transistors FET, including characterization for regimes of high power. It presents the modes of operation of a power amplifier, focusing on so-called classical modes, since these modes are suitable for broadband operation. For proper operation of any device that presents gain, the stability analysis is presented with the stabilization procedure of transistors. From all theoretical basis, is developed a design methodology of power amplifiers using the computational simulation tool Advanced Design System. So after all the amp modeling, construction and measurements are performed and good agreement was obtained with the simulation.
Xiao, Ming. "Novel predistortion techniques for RF power amplifiers." Thesis, University of Birmingham, 2009. http://etheses.bham.ac.uk//id/eprint/510/.
Full textArumilli, Gautham Venkat. "RF breakdown effects in microwave power amplifiers." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/45612.
Full textThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 95-98).
Electrical stresses in the transistors of high-efficiency switching power amplifiers can lead to hot-electron-induced "breakdown" in these devices. This thesis explores issues related to breakdown in the Transcom TC2571 PHEMT, and the effects this has on the Draper Laboratory 2.3 GHz microwave power amplifier in which the transistor is used. Characterization of breakdown was performed under DC and RF drive conditions, and shows the surprising role of impact ionization at low temperatures in DC off-state breakdown, as well as the apparent prevalence of on-state breakdown under RF drive. DC characterization shows that breakdown walkout and recovery both proceed more quickly at higher temperatures, and also shows that breakdown stress might lead to the permanent creation of traps that degrade breakdown voltage. Walkout under RF drive decreases amplifier gain at lower levels of RF input drive, but appears to have no negative effect on amplifier saturated output power. The use of temperature-compensated input drive and a diode to clamp negative gate voltage swing are also explored as circuit design techniques that can mitigate device degradation due to breakdown stress.
by Gautham Venkat Arumilli.
M.Eng.
Lotter, Paul. "Development of feedforward RF power amplifier." Thesis, Cape Peninsula University of Technology, 2006. http://hdl.handle.net/20.500.11838/2206.
Full textElectronic communication systems have become an integral part of our everyday lives. RF (Radio Frequency) power amplifiers form part of the fundamental building blocks of an electronic communication system. RF power amplifiers can also be one of the major causes of distortion in an electronic communication system. This thesis describes the linearity requirement for a RF power amplifier that is used in a transmitter section of an electronic communication system. Furthermore, five different linearisation techniques are presented and their characteristics compared. Since a power amplifier employing the Feedforward linearisation technique was designed, built and tested, this thesis focuses on the Feedforward technique. The design methods for the various Feedforward components are presented. The measured parameters of the Feedforward linearised amplifier are compared with the measured parameters of a non-linearised amplifier.
Sadeghpour, Ghazaany Tahereh. "Design and implementation of adaptive baseband predistorter for OFDM nonlinear transmitter : simulation and measurement of OFDM transmitter in presence of RF high power amplifier nonlinear distortion and the development of adaptive digital predistorters based on Hammerstein approach." Thesis, University of Bradford, 2011. http://hdl.handle.net/10454/5680.
Full textGray, Blake Raymond. "Design of RF and microwave parametric amplifiers and power upconverters." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/43613.
Full textAn, Kyu Hwan. "CMOS RF power amplifiers for mobile wireless communications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31717.
Full textCommittee Chair: Laskar, Joy; Committee Member: Cressler, John; Committee Member: Kohl, Paul; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Caharija, Walter. "Dynamic Bias for RF Class A Power Amplifiers." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2009. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9998.
Full textThis thesis focuses on class A radio frequency power amplifiers in dynamic supply modulation architectures (dynamic bias). These are promising efficiency enhancement techniques where the device is driven harder by varying its bias signals. Non linearities that arise are considered as digitally compensated through, for example, digital predistortion (DPD). Bias signals are meant as functions of the PA?s output power level (P out). Therefore, the input power level (P in) as well as the feeding signals are thought as quantities the amplifier need to give a certain P out. The selected set of bias points the device sweeps through is called bias trajectory or bias path. A tool to find a suitable bias trajectory is developed considering the requirements a class A power amplifier should satisfy: high power added efficiency, acceptable gain and output phase variations as P out changes (allowing a DPD algorithm to be effective), low harmonic distortion and not too complicated bias signals patterns. The tool consists of two softwares: ADS and Matlab. ADS simulates the device under test while Matlab allows the user to analyze the data and find a suitable bias path. Once a trajectory is identified, ADS can sweep along it and give more information on linearity and efficiency through, for instance, 2-tone harmonic balance simulations. Note that only static characteristics are evaluated and memory effects disregarded. The path searching algorithm is then applied to a HBT transistor, at a frequency of 1.9GHz and to a complete pHEMT class A PA (frequency of 6Ghz). In both cases a suitable trajectory is identified and analyzed back in ADS. The Matlab plots are qualitatively similar to each other when switching form one device to another. The HBT transistor has then been tested in the laboratory and static measurements have been performed showing good agreement with simulations. Keywords: Bias trajectory, dynamic bias, efficiency, HBT, linearity, pHEMT, power amplifier
Zhang, Yucai. "Multiharmonic tuning behavior of MOSFET RF power amplifiers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63040.pdf.
Full textNarasimha, Raju Divya. "Study of ESD effects on RF power amplifiers." Master's thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4993.
Full textID: 029809372; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (M.S.)--University of Central Florida, 2011.; Includes bibliographical references.
M.S.
Masters
Electrical Engineering and Computer Science
Engineering and Computer Science
Mahama, Abdul-Salim. "Switched-model Linearization Technique for RF Power Amplifiers." Thesis, Högskolan i Gävle, Avdelningen för elektronik, matematik och naturvetenskap, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495.
Full textAcimovic, Igor. "Contributions to the Design of RF Power Amplifiers." Thesis, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24406.
Full textLee, Joshua Khai Ho. "High performance transconductance amplifiers for high frequency RF applications." Thesis, Oxford Brookes University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.432702.
Full textJiang, Xufeng. "Envelope-tracking power supplies for RF power amplifiers in portable applications." Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3256446.
Full textYoon, Youngchang. "Reconfigurable CMOS RF power amplifiers for advanced mobile terminals." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/48987.
Full textHung, Tang Tat 1976. "Class-E power amplifiers and transmitters for RF applications." Thesis, McGill University, 2004. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=80020.
Full textAndersson, Tobias, and Johan Wahlsten. "Delta-Sigma Modulation Applied to Switching RF Power Amplifiers." Thesis, Linköping University, Department of Electrical Engineering, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9449.
Full textBackground:
The task of this thesis is to investigate the possibility of using non-linear high efficiency switching power amplifiers with spectrally efficient varying envelope modulation schemes and, if possible, further investigate such a solution on a high level.
The thesis focuses on the theory necessary to understand the technical issues related to power amplifiers and the procedures behind simulating and measuring the characteristics of different power amplifier configurations. The thesis also covers basic theory behind Delta-Sigma-modulators. The theory is needed to draw conclusions about the feasibility of using a Delta-Sigma-modulator as input to a switching amplifier.
Results:
Using a Delta-Sigma-modulated input to a switching amplifier inherently degrades the performance, mainly because of poor coding efficiency and high switching activity. However, by merely using a switching amplifier as a mixer it is shown to be possible to transmit a non-constant envelope signal, with digital logic. The resulting circuit is, however, not an amplifier and it should not be seen as the final result. As already mentioned: the result lies in the investigation of a using Delta-Sigma-modulator as input to a switching amplifier.
Conclusion:
From this investigation we believe that the widely known technique: pulse width modulation (PWM), together with a tuned switching amplifier and some linearization technique, for example pre-distortion, is a better way to go. Much effort should be put in understanding the fundamental limits and possibilities of an efficient tuned switching power amplifier.
Giesbers, David Mathew. "Adaptive digital polynomial predistortion linearisation for RF power amplifiers." Thesis, University of Canterbury. Electrical and Computer Engineering, 2008. http://hdl.handle.net/10092/2044.
Full textHanington, Gary Joseph. "Dynamic supply voltage RF power amplifiers for wireless applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1999. http://wwwlib.umi.com/cr/ucsd/fullcit?p9945782.
Full textAmin, Shoaib Amin. "Characterization and Linearization of Multi-channel RF Power Amplifiers." Licentiate thesis, KTH, Signalbehandling, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-157154.
Full textQC 20141217
Morris, Kevin Andrew. "RF power amplifier linearisation using predistortion techniques." Thesis, University of Bristol, 2000. http://hdl.handle.net/1983/02819fd3-4c63-41b7-b7b3-df70c1e4ba85.
Full textChen, Yi-Jan Emery. "Development of integrated RF CMOS power amplifiers for wireless communications." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/14821.
Full textGuimarães, Gabriel Teófilo Neves. "CMOS linear RF power amplifier with fully integrated power combining transformer." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/169084.
Full textThis work presents the design of a fully integrated Radio-frequency (RF) linear Power Amplifier( PA) in complementary metal-oxide silicon (CMOS) technology. In this work we analyse the challenges in CMOS PA design as well as the state-of-the-art solutions. One such challenge presented by this technology is the low supply voltage and high-loss passives, which pose severe limits on the output power and efficiency achieved with traditional PA design methods and load impedance transformation networks. This issue is addressed by the use of on-chip, highly efficient power combining networks such as the one in this work: A series combining transformer (SCT). The problem of using CMOS becomes even more critical for recent communications standards that require high transmitter linearity such as the ones used for wireless local area network (WLAN) or 3G and 4G mobile communications. This requirement is such that the PA operate at a high power back-off from its optimum operating point, degrading efficiency. To address this problem linearization techniques such as digital pre-distortion can be used in order to decrease the necessary power back-off. In this work an analog technique of AM-PM distortion compensation is used to linearize the capacitance at the input of the amplifier’s transistors and reduce this type of distortion that severely impacts the error vector magnitude (EVM) of the signal. The design process is detailed and aims to make evident the trade-offs of PA design and particularly the impact of harmonic termination and the quality of passives on the load transformation network, the series combining transformer design is optimized for common-mode impedance tuning used for 2nd harmonic termination. The circuit has only a single amplifying stage due to its area being limited to 1:57 x 1:57 mm2 and the design is very constrained by this fact. The PA simulated performance is analyzed under various metrics. It achieves a simulated maximum output power of 24:4 dBm with a drain efficiency of 24:53% and power added efficiency (PAE) of 22%. The PA has a very flat power gain of 15:8 0:1 dB throughout the 2.4 GHz industrial, scientific and medical (ISM) band and is unconditionally stable with 4:9. The PA has a compression point of OP1dB = 20:03 dBm and the signal has a non-linear phase shift of = 1:2o up to this output power. A two-tone intermodulation test with 3dB back-off from OP1dB has a ratio of third-order intermodulation to fundamental of IMD3 = 24:22 dB, and lower and upper fifth order intermodulation to fundamental of IMD5Lower = 48:16 dB and IMD5Upper = 49:8 dB. Finally the PA is shown to satisfy the requirements for operation within the institute of electrical and electronic engineers (IEEE) 802.11g standard. It achieves an average output power of 15:4 dBm while having an EVM of 5:43% or 25:3 dB while satisfying the output spectrum mask for all channels.
Kolcuoglu, Turusan. "Linearization Of Rf Power Amplifiers With Memoryless Baseband Predistortion Method." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613213/index.pdf.
Full textMyoung, Suk Keun. "Low frequency feedforward and predistortion linearization of RF power amplifiers." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1150416616.
Full textOgunnika, Olumuyiwa Temitope 1978. "Efficiency enhancement techniques for RF and millimeter wave power amplifiers." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78455.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (p. 123-126).
Power amplifiers are the circuit blocks in wireless transceivers that require the largest power budget because of their relatively low efficiencies. RF designers cannot depend solely on the development better semiconductor devices in advanced deeply scaled process technologies to obtain improved power amplifier performance. The development of new and better circuits, architectures and design methodologies to maximally exploit the available semiconductor devices is very important as well. This thesis investigates a number of techniques that can be used to improve the efficiency of power amplifiers and break the power-frequency tradeoff in power amplifier design. The first technique emphasizes the use of a class E tuned output network as an efficiency enhancement tool for power amplifiers regardless of their bias conditions. A Class E tuned CMOS power amplifier (PA) operating in the 60 GHz band was designed. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA were implemented in a 32 nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8 dB (10 dB), and saturated output power > 9 dBm (12.5 dBm) were measured at 60 GHz from the single-ended (differential) PA with 0.9 V supply. The second technique investigated the efficacy of resistance compression networks in an energy recycling network operating at multi-gigahertz frequencies. The resistance compression network reduces the variation in resonant rectifier input impedance seen at the isolation port of an isolating power combiner. The system was operated at 2.14 GHz and was built around Schottky barrier diodes custom fabricated in a 0.13 [mu]m CMOS process. It is the first experimental demonstration that resistance compression networks can be used for energy recycling in multi-gigahertz applications.
by Olumuyiwa Temitope Ogunnika.
Ph.D.