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Academic literature on the topic 'RF high power amplifiers'

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Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "RF high power amplifiers"

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Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measures 73 percent efficiency of output of RF generator at 13.56MHZ and 478W output from DE375 MOSFET. The main reasons of power dissipation mainly are analyzed, and some measures are taken to improve them by the optimization principles and experimental results and the efficiency of the power output can reach above 70 percent.
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Gao, S. "High-efficiency class-F RF/microwave power amplifiers." IEEE Microwave Magazine 7, no. 1 (February 2006): 40–48. http://dx.doi.org/10.1109/mmw.2006.1614233.

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Jaehyok Yi, Youngoo Yang, Myungkyu Park, Wonwoo Kang, and Bumman Kim. "Analog predistortion linearizer for high-power RF amplifiers." IEEE Transactions on Microwave Theory and Techniques 48, no. 12 (2000): 2709–13. http://dx.doi.org/10.1109/22.899034.

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Vasic, Miroslav, Oscar Garcia, Jesus Angel Oliver, Pedro Alou, Daniel Diaz, and Jose Antonio Cobos. "Multilevel Power Supply for High-Efficiency RF Amplifiers." IEEE Transactions on Power Electronics 25, no. 4 (April 2010): 1078–89. http://dx.doi.org/10.1109/tpel.2009.2033186.

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Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
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Karsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim, and Mehmet Bozdogan. "High power RF operations studies at TARLA facility." Canadian Journal of Physics 97, no. 11 (November 2019): 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.

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Turkish Accelerator and Radiation Laboratory (TARLA) is a facility capable of accelerating an electron beam up to 40 MeV. Two beamlines were proposed to generate free-electron laser radiation and bremsstrahlung. The accelerator employs two normal conducting cavities, so-called buncher cavities: subharmonic buncher (SHB) and fundamental buncher (FB), and two cryomodules that house two TESLA cavities each. SHB operates in 260 MHz and FB in 1.3 GHz, and is powered by 1.5 kW and 500 W radio frequency (RF) amplifiers, respectively. Each TESLA cavity is driven by 18 kW saturated high-power solid-state amplifiers (SSA). In addition, a L band pulse compressor system is designed and implemented at the facility to actively promote high-power RF research. Currently, setup of a resonant ring test bench is approved to test the RF components under high power RF conditions. This paper describes the TARLA high power RF, RF controller, and network structures. High power tests and measurements of the RF components of the TARLA beamline are given. Outcomes from the operation of the L band pulse compressor are explained, and the resonant ring test stand is stated as a summary.
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Ortega-González, Francisco Javier. "New driver for high-efficiency switching RF power amplifiers." Microwave and Optical Technology Letters 43, no. 5 (October 5, 2004): 370–72. http://dx.doi.org/10.1002/mop.20472.

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Stopel, Alon, Mark Leibovitch, and Yoram Shapira. "Nonuniform RF Overstress in High-Power Transistors and Amplifiers." IEEE Transactions on Electron Devices 55, no. 4 (April 2008): 1067–73. http://dx.doi.org/10.1109/ted.2008.916719.

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Reveyrand, T., I. Ramos, and Z. Popović. "Time-reversal duality of high-efficiency RF power amplifiers." Electronics Letters 48, no. 25 (December 6, 2012): 1607–8. http://dx.doi.org/10.1049/el.2012.3004.

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (January 5, 2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.
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Dissertations / Theses on the topic "RF high power amplifiers"

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Srirattana, Nuttapong. "High-Efficiency Linear RF Power Amplifiers Development." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6899.

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Next generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier scheme by improving the efficiency at much lower power level. The proposed technique is supported by a new approach in device periphery calculation to reduce AM/AM distortion and a further improvement of linearity by the bias adaptation concept. The device periphery adjustment technique for efficiency enhancement of power amplifier integrated circuits is also proposed in this work. The concept is clearly explained together with its implementation on CMOS and SiGe RF power amplifier designs. Furthermore, linearity improvement technique using the cancellation of nonlinear terms is proposed for the CMOS power amplifier in combination with the efficiency enhancement technique. In addition to the efficiency enhancement of power amplifiers, a scalable large-signal MOSFET model using the modified BSIM3v3 approach is proposed. A new scalable substrate network model is developed to enhance the accuracy of the BSIM3v3 model in RF and microwave applications. The proposed model simplifies the modeling of substrate coupling effects in MOS transistor and provides great accuracy in both small-signal and large-signal performances.
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Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.

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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic drawbacks of CMOS technology. As an effort to overcome the challenges, the high-power handling T/R switches are introduced as the first part of this dissertation. The proposed differential switch topology and feed-forward capacitor helps reducing the voltage stress over the switch devices, enabling a linear power transmission. With the high-power T/R switches, a new transmitter front-end topology - differential PA and T/R switch topology with the multi-section PA output matching network - is also proposed. The multi-stage PA output matching network assists to relieve the voltage stress over the switch device even more, by providing a low switch operating impedance. By analyzing the power performance and efficiency of entire transmitter module, design methodology for the high-power handling and efficient transmitter module is established. Finally, the research in this dissertation provides low-cost, high-power handling, and efficient CMOS RF transmitter module for wireless applications.
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Yahyavi, Mehran. "On the design of high-efficiency RF Doherty power amplifiers." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/398236.

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Power amplifiers (PAs) are one of the most crucial elements in wireless standards becasue they are the most power hungry subsystems. These elements have to face an important issue, which is the power efficiency, a fact related with the output back-off (OBO). But the OBO depends on the kind of modulated signal, in proportion to the modulated signal peak-to-average power ratio (PAPR). The higuer is the data rate, the higer is the OBO, and consequently the lower is the efficiency. A low efficiency of PAs causes the waste of energy as heat. Furthermore, the trade-off between linearity and efficiency in PAs is another major issue. To cope with the undesired circumstances producing efficiency degradation, the Doherty power amplifier (DPA) is one of the useful techniques which provide high efficiency for high PAPR of modern communication signals. Nevertheless, the limited bandwidth (BW) of this kind of PAs (about 10% of fractional bandwidth) and its importance (in modern wireless systems such as LTE, WiMAX, Wi-Fi and satellite systems) have encouraged the researchers to improve this drawback in recent years. Some typical BW limiting factors effect on the performance of DPAs: i) quarter-wave length transformers, ii) phase compensation networks in/output matching circuits, iii) offset lines and device non-idealities; The quarter-wave length transformers performs as an inverter impedance in the load modulation technique of DPAs. The future objective in designing DPAs is to decrease the impact of these issues. In this context, this PhD-thesis is focused on improving fractional bandwidth of DPAs using the new methods that are related to impedance transformers instead of impedance inverters in the load modulation technique. This study is twofold. First, it is presented a novel DPA where a wideband GaN DPA in the 2.5 GHz band with an asymmetrical Wilkinson splitter. The impedance transformer of the proposed architecture is based on a matching network including a tapered line with multi-section transformer in the main stage. The BW of this DPA has ranged from 1.8 to 2.7 GHz. Plus, the obtained power efficiency (drain) is higher than 33% in the whole BW at both maximum and OBO power levels. Second, based on the benefits of the Klopfenstein taper, a promising DPA design is proposed where a Klopfenstein taper replaces the tapered line. In fact, this substitution results on reducing the reflection coefficient of the transformer. From a practical prototype realization of this novel Doherty-like PA in the 2.25 GHz band, this modification has demonstrated that the resulting DPA BW is increased in comparison to the conventional topology while keeping the efficiency figures. Moreover, this study also shows that the Klopfenstein taper based design allows an easy tuning of the group delay through the output reactance of the taper, resulting in a more straightforward adjustments than other recently published designs where the quarter-wave transformer is replaced by multi-section transmission lines (hybrid or similar). Experimental results have shown 43-54% of drain efficiency at 42 dBm output power, in the range of 1.7 to 2.75 GHz. Concretely, the results presented in this novel Doherty-like PA implies an specific load modulation technique that uses the mixed Klopfenstein tapered line together with a multi-section transformer in order to obtain high bandwidth with the usual efficiency in DPAs.
Los amplificadores de potencia (PAs) son uno de los elementos más importantes para los transmisores inalámbricos desde el punto de vista del consumo energético. Un aspecto muy importante es su eficiencia energética, un concepto relacionado con el back-off de salida (OBO), que a su vez viene condicionadpo por el PAPR de la señal modulada a amplificar. Una baja eficiencia de los PA hace que la pérdida de energía se manifieste en forma de calor. De hecho, esta cuestión conduce al incremento de los costes y tamaño, esto último por los radiadores. Además, el compromiso entre la linealidad y la eficiencia en los PA es otro problema importante. Para hacer frente a las circunstancias que producen la degradación de la eficiencia, el amplificador de potencia tipo Doherty (DPA) es una de las técnicas más útiles que proporcionan una buena eficiencia incluso para los altos PAPR comunes en señales de comunicación modernos. Sin embargo, el limitado ancho de banda (BW) de este tipo de PA (alrededor del 10% del ancho de banda fraccional) y su importancia (en los sistemas inalámbricos modernos, tales como LTE, WiMAX, Wi-Fi y sistemas de satélites) han animado a los investigadores para mejorar este inconveniente en los últimos años. Algunos aspectos típicos que limitan el BW en los DPA son: i) transformadores de longitud de cuarto de onda, ii) redes de compensación de fase y circuitos de adaptación de salida, iii) compensación de las líneas y los dispositivos no ideales. Los transformadores de cuarto de onda actuan como un inversor de impedancia en la técnica de modulación de carga de la DPA "("load modulation"). Concretamente, el objetivo futuro de diseño de DPA es disminuir el impacto de estos problemas. En este contexto, esta tesis doctoral se centra en mejorar el ancho de banda fraccional de DPA utilizando los nuevos métodos que están relacionados con el uso de transformadores de impedancias en vez de inversores en el subcircuito de modulación de carga. Este estudio tiene dos niveles. En primer lugar, se presenta una novedosa estructura del DPA de banda ancha usándose dispositivos de GaN en la banda de 2,5 GHz con un divisor Wilkinson asimétrico. El transformador de impedancias de la arquitectura propuesta se basa en una red de adaptación, incluyendo una línea cónica con múltiples secciones del transformador en la etapa principal. El BW de este DPA ha sido de 1,8 a 2,7 GHz. Además, se obtiene una eficiencia de drenador de más del 33% en todo el BW, tanto a nivel de potencia máxima como a nivel del OBO. En segundo lugar, aprovechando los beneficios de un adaptador de Klopfenstein, se propone un nuevo diseño del DPA. Con la sustitución de la lina conica por el Klopfenstein se reduce el coeficiente de reflexión de transformador de impedancias. Sobre un prototipo práctico de esta nueva estructura del Doherty, en la banda de 2,25 GHz, se ha demostrado que el BW resultante se incrementa en comparación con la topología convencional mientras se mantienen las cifras de eficiencia. Por otra parte, en este estudio se demuestra que el diseño basado en el Klopfenstein permite una afinación fácil del retardo de grupo a través de la reactancia de salida del taper, lo que resulta en un ajuste más sencillo que otros diseños publicados recientemente en el que el transformador de cuarto de onda se sustituye por multi-líneas de transmisión de la sección (híbridos o similar). Los resultados experimentales han mostrado un 43-54% de eficiencia de drenador sobre 42 dBm de potencia de salida, en el intervalo de 1,7 a 2,75 GHz. Concretamente, los resultados presentados en esta nueva estructura tipo-Doherty implican una técnica de modulación de carga que utiliza una combinación de un Klopfenstein junto con un transformador de múltiples secciones con el fin de obtener un alto ancho de banda con la eficiencia habitual en DPAs.
Els amplificadors de potència (PA) són un dels elements més importants per els sistemes ràdio ja que sone ls principals consumidors d'energía. Un aspecte molt important és l'eficiència de l'amplificador, aspecte relacionat amb el back-off de sortida (OBO) que a la seva vegada ve condicionat pel PAPR del senyal modulat. Una baixa eficiència dels PA fa que la pèrdua d'energia en manifesti en forma de calor. De fet, aquesta qüestió porta a l'increment dels costos i grandària, degut als dissipadors de calor. A més, el compromís entre la linealitat i l'eficiència en els PA es un altre problema important. Per fer front a les circumstàncies que porten a la degradació de l'eficiència, l'amplificador de potència Doherty (DPA) és una de les tècniques més útils i que proporcionen una bona eficiència per als alts PAPR comuns en senyals de comunicació moderns. No obstant això, l'ample de banda limitat (BW) d'aquest tipus de PA (al voltant del 10% de l'ample de banda fraccional) i la seva importància (en els sistemes moderns, com ara LTE, WiMAX, Wi-Fi i sistemes de satèl·lits) han animat els investigadors per millorar aquest inconvenient en els últims anys. Alguns aspectes tipicament limitadors del BW en els DPA son: i) transformadors de longitud d'quart d'ona, ii) xarxes de compensació de fase en circuits / adaptacions de sortida, iii) compensació de les línies i els dispositius no ideals. Els transformadors de quart d'ona s'utilitzen com a inversors d'impedàncies en la tècnica de modulació de càrrega del DPA ("load modulation"). Concretament, l'objectiu futur de disseny d'DPA és disminuir l'impacte d'aquests problemes. En aquest context, aquesta tesi doctoral es centra en millorar l'ample de banda fraccional dels DPA utilitzant nous mètodes que estan relacionats amb l'ús de transformadors d'impedàncies, en comptes d'inversors, en el subcircuit de modulació de càrrega. Aquest treball té dos nivells. En primer lloc, es presenta un DPA novedós que fa servir dispositus GaN DPA a la banda de 2,5 GHz amb un divisor Wilkinson asimètric. El transformador d'impedàncies de l'arquitectura proposada es basa en una xarxa d'adaptació, incloent una línia cònica amb múltiples seccions del transformador en l'etapa principal. El BW d'aquest DPA ha mostrat ser d'1,8 a a 2,7 GHz. A més, s'obté una eficiència de drenador de més del 33% en tot el BW, tant a nivell de potència màxima com de OBO. En segon lloc, sobre la base dels beneficis del adaptador de Klopfenstein, un proposa un nou disseny on un Klopfenstein substitueix la anterior línia cònica. Aquesta substitució repercuteix en la reducció del coeficient de reflexió de transformador d'impedàncies.Des d'una realització pràctica (prototipus) d'aquest nou amplificador tipus Doherty a la banda de 2,25 GHz, s'ha demostrat que el BW resultant s'incrementa en comparació amb la topologia convencional mentre es mantenen les xifres d'eficiència. D'altra banda, en aquest estudi es demostra que el disseny basat en el Klopfenstein permet una afinació fàcil del retard de grup a través de la reactància de sortida de la forma cònica, el que resulta en un ajust més senzill que altres dissenys publicats recentment en què el transformador de quart d'ona es substitueix per multi-línies de transmissió de la secció (híbrids o similar). Els resultats experimentals han mostrat un 43-54% d'eficiència de drenador en 42 dBm de potència de sortida, en l'interval de 1,7-2,75 GHz. Concretament, els resultats presentats en aquest nou amplificador tipus Doherty impliquen una tècnica de modulació de càrrega específic que utilitza una combinació del Klopfenstein juntament amb un transformador de múltiples seccions per tal d'obtenir un alt ample de banda amb la usual eficiència en DPAs.
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Haapala, Linus, and Aleksander Eriksson. "RF High Power Amplifiers for FREIA – ESS : design, fabrication and measurements." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-263549.

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The FREIA laboratory is a Facility for REsearch Instrumentation and Acceleratior development at Uppsala University, Sweden, constructed recently to test and develop superconducting accelerating cavities and their high power RF sources. FREIA's activity target initially the European Spallation Source (ESS) requirements for testing spoke cavities and RF power stations, typically 400 kW per cavity. Different power stations will be installed at the FREIA laboratory. The first one is based on vacuum tubes and the second on a combination of solid state modules. In this context, we investigate different related aspects, such as power generation and power combination. For the characterization of solid state amplifier modules in pulsed mode, at ESS specifications, we implement a Hot Sparameter measurement set-up, allowing in addition the measurement of different parameters such as gain and efficiency. Two new solid state amplifier modules are designed, constructed and measured at 352 MHz, using commercially available LDMOS transistors. Preliminary results show a drain efficiency of 71 % at 1300 W pulsed output power. The effects of changing quiescent current (IDq) and drain voltage are investigated, aswell as the possibilities to combine several modules together.
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Jang, Haedong. "NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.

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Hietakangas, S. (Simo). "Design methods and considerations of supply modulated switched RF power amplifiers." Doctoral thesis, Oulun yliopisto, 2012. http://urn.fi/urn:isbn:9789514298363.

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Abstract This thesis studies the design methods and properties of supply-modulated switch-mode radio frequency power amplifiers. Besides simulation based studies and theory review, two amplifiers were designed: a discrete MESFET class E amplifier (0.5 W at 1 GHz), and an integrated pHEMT class E-1 amplifier (2.0 W at 1.6 GHz) with an on-chip resonator. The existing design methods of the resonant output network of switching amplifiers were reviewed and some extensions on the handling of nonlinear capacitances were proposed. The effects of varying supply voltage were studied and suggestions were given to minimize Vdd / AM and Vdd / PM distortion in supply modulated amplifiers. The implementation of the bias feed was also discussed resulting in proposing a combination of a short transmission line and a small inductor, which provides both fast supply modulation and little effect on harmonic impedances. The main contributions are related to the study of the input impedance of a class E power amplifier, where the effects of supply dependent input impedance and timing skew generated by injected harmonic distortion were analyzed. The stabilization of the amplifier was also discussed. Based on the findings, a push-pull class E amplifier with extra cross-coupled feedback capacitors and second harmonic traps at the gates appears to be a very good starting point for a further study
Tiivistelmä Tämä väitöstyö käsittelee radiotaajuuksilla toimivien käyttöjännitemoduloitujen kytkintehovahvistimien ominaisuuksia ja suunnittelumenetelmiä. Suunnittelumenetelmiin liittyvän katsauksen ja simulaatioihin perustuvan tutkimusten lisäksi kaksi vahvistinta toteutettiin väitöstutkimuksen aikana: diskreettikomponentein toteutettu E-luokan vahvistin (MESFET, 0.5 W ja 1 GHz) ja integroituna piirinä toteutettu käänteinen E-luokan vahvistin (pHEMT, 2.0 W ja 1.6 GHz), jonka lähdön resonaattoripiiri sisällytettiin integroituun piiriin. Kytkinvahvistimien suunnittelumenetelmiä verrattiin ja kehitettiin edelleen siten, että suunnitteluvaiheessa voidaan ottaa huomioon esim. transistoripiirin takaisinkytkennässä olevan kapasitanssin epälineaarisuus. Työssä tutkittiin myös käyttöjännitemodulaation vaikutusta kytkinvahvistimien toimintaan, ja tutkimuksen tuloksena annettiin muutamia ehdotuksia käyttöjänniteriippuvan amplitudi- (Vdd / AM) ja vaihemodulaation (Vdd / PM) vähentämiseksi. Lähdön biasointipiirin toteutukseen suositeltiin pienen kelan ja siirtolinjan yhdistelmää. Yhdistelmän avulla pyritään maksimoimaan modulaationopeus ja minimoimaan vaikutukset harmonisiin impedansseihin. Pääkohtina väitöksessä ovat E-luokan kytkinvahvistimesta saadut tutkimus- ja mittaushavainnot käyttöjännitteen funktiona muuttuvasta transistorin tuloimpedanssista sekä suurikokoisen transistorin tuloissa tapahtuvan, säröytymisen aiheuttaman tulosignaalien ajoitusvirheen analyysi. Näiden lisäksi vahvistimen stabiilisuuteen kiinnitettiin huomiota. Saatujen havaintojen perusteella voimme todeta, että push-pull -tyyppinen E-luokan vahvistin olisi mielenkiintoinen valinta jatkotutkimuksille
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Woo, Wangmyong. "Hybrid Digital/RF Envelope Predistortion Linearization for High Power Amplifiers in Wireless Communication Systems." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6924.

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Hybrid Digital/RF Envelope Predistortion Linearization for High Power Amplifiers in Wireless Communication Systems Wangmyong Woo 151 Pages Directed by Dr. J. Stevenson Kenney The objective of this research is to implement a hybrid digital/RF envelope predistortion linearization system for high-power amplifiers used in wireless communication systems. It is well known that RF PAs have AM/AM (amplitude modulation) and AM/PM (phase modulation) nonlinear characteristics. Moreover, the distortion components generated by a PA are not constant, but vary as a function of many input conditions such as amplitude, signal bandwidth, self-heating, aging, etc. Memory effects in response to past inputs cause a hysteresis in the nonlinear transfer characteristics of a PA. This hysteresis, in turn, creates uncertainty in predictive linearization techniques. To cope with these nonlinear characteristics, distortion variability, and uncertainty in linearization, an adaptive digital predistortion technique, a hybrid digital/RF envelope predistortion technique, an analog-based RF envelope predistortion technique, and a combinational digital/analog predistortion technique have been developed. A digital adaptation technique based on the error vector minimization of received PA output waveforms was developed. Also, an adaptive baseband-to-baseband test system for the characterization of RF PAs and for the validation of linearization algorithms was implemented in conjunction with the adaptation technique. To overcome disadvantages such as limited correction bandwidth and the need for a baseband input signal in digital predistortion, an adaptive, wideband RF envelope predistortion system was developed that incorporates a memoryless predistortion algorithm. This system is digitally controlled by a look-up table (LUT). Compared with conventional baseband digital approaches, this predistortion architecture has a correction bandwidth that is from 20 percent to 33 percent wider at the same clock speeds for third to fifth order IMDs and does not need a digital baseband input signal. For more accurate predistortion linearization for PAs with memory effects, an RF envelope predistortion system has been developed that uses a combination of analog-based envelope predistortion (APD) working in conjunction with digital LUT-based adaptive envelope predistortion (DPD). The resulting combination considerably decreases the computational complexity of the digital system and significantly improves linearity and efficiency at high power levels.
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Refai, Wael Yahia. "A Linear RF Power Amplifier with High Efficiency for Wireless Handsets." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/25886.

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This research presents design techniques for a linear power amplifier with high efficiency in wireless handsets. The power amplifier operates with high efficiency at the saturated output power, maintains high linearity with enhanced efficiency at back-off power levels, and covers a broadband frequency response. The amplifier is thus able to operate in multiple modes (2G/2.5G/3G/4G). The design techniques provide contributions to current research in handset power amplifiers, especially to the converged power amplifier architecture, to reduce the number of power amplifiers within the handset while covering all standards and frequency bands around the globe. Three main areas of interest in power amplifier design are investigated: high power efficiency; high linearity; and broadband frequency response. Multiple techniques for improving the efficiency are investigated with the focus on maintaining linear operation. The research applies a new technique to the handset industry, class-J, to improve the power efficiency while avoiding the practical issues that hinder the typical techniques (class-AB and class-F). Class-J has been implemented using GaN FET in high power applications. To our knowledge, this work provides the first implementation of class-J using GaAs HBT in a handset power amplifier. The research investigates the linearity, and the nature and causes of nonlinearities. Multiple concepts for improving the linearity are presented, such as avoiding odd-degree harmonics, and linearizing the relationship between the output current and the input voltage of the amplifier at the fundamental frequency. The concept of bias depression in HBT transistors is introduced with a bias circuit that reduces the bias-offset effect to improve linearity at high output power. A design methodology is presented for broadband matching networks, including the component loss. The methodology offers a quick and accurate estimation of component values, giving more degrees of freedom to meet the design specifications. It enables a trade-off among high out-of-band attenuation, number/size of components, and power loss within the network. Although the main focus is handset power amplifiers, most of the developed techniques can be applied to a wide range of power amplifiers.
Ph. D.
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Rascher, Jochen [Verfasser]. "RF Switch Design for Reconfigurable Power Amplifiers with High Back-off Efficiency in nm-CMOS Technologies / Jochen Rascher." München : Verlag Dr. Hut, 2015. http://d-nb.info/1074063171/34.

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Book, Stefan. "1kW Class-E solid state power amplifier for cyclotron RF-source." Thesis, Uppsala universitet, FREIA, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341693.

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This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. The results for 100 MHz operation show a power added efficiency of 82% at 1200 W pulsed power output. For operation at 102 MHz results show a power added efficiency of 86% at 1050 W pulsed power output. Measurements of the drain- and gate voltage waveforms provide validation of Class-E operation.
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Books on the topic "RF high power amplifiers"

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1944-, Giannini Franco, and Limiti Ernesto, eds. High efficiency RF and microwave solid state power amplifiers. Chichester, West Sussex, U.K: J. Wiley, 2009.

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Hella, Mona Mostafa. RF CMOS power amplifiers: Theory, design, and implementation. Boston: Kluwer Academic Publishers, 2002.

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Hella, Mona Mostafa. RF CMOS power amplifiers: Theory, design and implementation. Boston: Kluwer Academic Publishers, 2002.

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Analog circuit design: Scalable analog circuit design, high-speed D/A converters, RF power amplifiers. New York: Springer, 2011.

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Casier, Herman. Analog Circuit Design: Sensors, Actuators and Power Drivers; Integrated Power Amplifiers from Wireline to RF; Very High Frequency Front Ends. Dordrecht: Springer Science + Business Media B.V, 2008.

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RF power amplifiers. Chichester, West Sussex, U.K: Wiley, 2008.

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Kazimierczuk, Marian K. RF Power Amplifiers. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118844373.

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O, Sokal Nathan, ed. Switchmode RF power amplifiers. Amsterdam: Elsevier/Newnes, 2007.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. Linear CMOS RF Power Amplifiers. Boston, MA: Springer US, 2014. http://dx.doi.org/10.1007/978-1-4614-8657-2.

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Schreurs, Dominique. RF power amplifier behavioral modeling. Cambridge: Cambridge University Press, 2008.

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Book chapters on the topic "RF high power amplifiers"

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Ramos, João, and Michiel Steyaert. "High Voltage Devices for RF Power Amplifiers: An Advantage?" In Analog Circuit Design, 177–200. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4020-2805-2_9.

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Ricotti, Giulio, Dario Bianchi, Fabio Quaglia, and Sandro Rossi. "Design and Technology for Very High-Voltage Opamps." In Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems, 175–86. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-21185-5_10.

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Thiruarayanan, Raghavasimhan, David Ruffieux, and Christian Enz. "PLL-Free, High Data Rate Capable Frequency Synthesizers." In Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems, 225–37. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-21185-5_13.

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Sokal, Nathan O. "Class-E High-Efficiency RF/Microwave Power Amplifiers: Principles of Operation, Design Procedures, and Experimental Verification." In Analog Circuit Design, 269–301. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/0-306-47950-8_14.

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Sjöland, Henrik. "Inductorless RF CMOS Power Amplifiers." In Highly Linear Integrated Wideband Amplifiers, 129–43. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-4056-4_9.

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Yip, Peter C. L. "Power Amplifiers." In High-Frequency Circuit Design and Measurements, 119–38. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-6950-9_7.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Design." In Linear CMOS RF Power Amplifiers, 101–51. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_6.

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Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Specifications." In Design and Control of RF Power Amplifiers, 25–46. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_3.

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Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Classifications." In Design and Control of RF Power Amplifiers, 47–69. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_4.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Metrics." In Linear CMOS RF Power Amplifiers, 11–28. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_2.

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Conference papers on the topic "RF high power amplifiers"

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Pasour, John. "High-Power, Annular-Beam Klystron Amplifiers." In HIGH ENERGY DENSITY AND HIGH POWER RF:5TH Workshop on High Energy Density and High Power RF. AIP, 2002. http://dx.doi.org/10.1063/1.1498178.

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Rodgers, John. "Harmonic Gain and Noise in Frequency-Multiplying Gyro-Amplifiers." In HIGH ENERGY DENSITY AND HIGH POWER RF: 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635125.

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Virdee, A. S. "Amplifier design for high efficiency performance." In IEE Seminar Microwave and RF Power Amplifiers. IEE, 2000. http://dx.doi.org/10.1049/ic:20000662.

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Miao, Y. "Prebunching Of Electrons In Harmonic-Multiplying Cluster-Cavity Gyro-Amplifiers." In HIGH ENERGY DENSITY AND HIGH POWER RF: 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635149.

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Jones, Jeff. "High power integration for RF infrastructure power amplifiers." In 2009 IEEE Radio and Wireless Symposium (RWS). IEEE, 2009. http://dx.doi.org/10.1109/rws.2009.4957406.

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FitzPatrick, D. "Design of a high power solid state amplifier to replace TWTAs in airborne applications." In IEE Seminar Microwave and RF Power Amplifiers. IEE, 2000. http://dx.doi.org/10.1049/ic:20000659.

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Kashif, A., C. Svensson, and Q. Wahab. "High Power LDMOS Transistor for RF-Amplifiers." In 2007 International Bhurban Conference on Applied Sciences & Technology. IEEE, 2007. http://dx.doi.org/10.1109/ibcast.2007.4379896.

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Vidkjaer, Jens. "Series-tuned high efficiency RF-power amplifiers." In 2008 IEEE MTT-S International Microwave Symposium Digest - MTT 2008. IEEE, 2008. http://dx.doi.org/10.1109/mwsym.2008.4633106.

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Vasic, M., O. Garcia, J. A. Oliver, P. Alou, D. Diaz, and J. A. Cobos. "Switching capacities based envelope amplifier for high efficiency RF amplifiers." In 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433590.

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Raab, F. H. "Switching transients in class-D RF power amplifiers." In 7th International Conference on High Frequency Radio Systems and Techniques. IEE, 1997. http://dx.doi.org/10.1049/cp:19970787.

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Reports on the topic "RF high power amplifiers"

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Rutledge, David. High-Efficiency, Class-E RF Power Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, April 2001. http://dx.doi.org/10.21236/ada393787.

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Rose, M. F., L. C. Chow, and J. H. Johnson. Thermal management of space-based, high-power solid-state RF amplifiers. Final report. Office of Scientific and Technical Information (OSTI), August 1990. http://dx.doi.org/10.2172/376392.

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Luhmann, N. C., and Jr. Stable High-Power Harmonic Gyro-Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, September 1994. http://dx.doi.org/10.21236/ada293697.

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Yu, Charles X., Steven J. Augst, Shawn M. Redmond, Kris C. Goldizen, Daniel V. Murphy, Antonio Sanchez, and Tso Y. Fan. Coherent Combining of High-Power Yb Fiber Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, April 2011. http://dx.doi.org/10.21236/ada569704.

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Rodwell, Mark, and Umesh K. Mishra. High Power Broadband Amplifiers for 1-18 GHz Naval Radar. Fort Belvoir, VA: Defense Technical Information Center, June 2002. http://dx.doi.org/10.21236/ada403109.

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Ozalas, Matthew T. High Efficiency Class-F MMIC Power Amplifiers at Ku-Band. Fort Belvoir, VA: Defense Technical Information Center, January 2005. http://dx.doi.org/10.21236/ada456277.

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Zaltsman A. Energy Recovery Linac: High Power RF Systems. Office of Scientific and Technical Information (OSTI), February 2010. http://dx.doi.org/10.2172/1061965.

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Nantista, C. Overmoded Waveguide Components for High-Power RF. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/826768.

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Zaltsman, A. R&D ERL: High power RF systems. Office of Scientific and Technical Information (OSTI), January 2010. http://dx.doi.org/10.2172/1013459.

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Pritzkau, David P. Possible High Power Limitations From RF Pulsed Heating. Office of Scientific and Technical Information (OSTI), November 1998. http://dx.doi.org/10.2172/9969.

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