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Journal articles on the topic 'Reverse Recovery; Diode; LDMOS'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Elhami Khorasani, Arash, Mark Griswold, and T. L. Alford. "Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode." IEEE Electron Device Letters 35, no. 11 (November 2014): 1079–81. http://dx.doi.org/10.1109/led.2014.2353301.

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2

KAZIMIERCZUK, MARIAN K. "REVERSE RECOVERY OF POWER pn JUNCTION DIODES." Journal of Circuits, Systems and Computers 05, no. 04 (December 1995): 589–606. http://dx.doi.org/10.1142/s0218126695000369.

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A quasi-steady state approximation is used to derive expressions for the waveforms of minority carrier charge stored in p+nn+ power junction diodes driven by large-signal sinusoidal and ramp voltages. These waveforms are derived by solving a diode charge-control differential equation. Using the charge waveforms, the storage time is determined and the diode current and voltage waveforms are predicted. It is shown that three frequency ranges can be distinguished: (1) low-frequency range in which the reverse recovery is negligible, (2) mid-frequency range in which the reverse recovery is detrimental, but the diode is still of practical value, and (3) high-frequency range where the diode does not exhibit its rectifying properties. A simple method for measuring the minority carrier lifetime is proposed. Experimental results are given for an MR826 fast-recovery pn junction diode and a 31DQ06 Schottky diode for operating frequencies of up to 10 MHz. The theoretical and experimental results were in good agreement.

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3

Banáš, Stanislav, Jan Divín, Josef Dobeš, and Václav Paňko. "Accurate diode behavioral model with reverse recovery." Solid-State Electronics 139 (January 2018): 31–38. http://dx.doi.org/10.1016/j.sse.2017.10.034.

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4

Lauritzen, P. O., and C. L. Ma. "A simple diode model with reverse recovery." IEEE Transactions on Power Electronics 6, no. 2 (April 1991): 188–91. http://dx.doi.org/10.1109/63.76804.

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5

Sun, Wei, and Da Ke Yang. "Automatic Measurement and Modeling Implementation of Diode Reverse Recovery." Applied Mechanics and Materials 385-386 (August 2013): 1300–1304. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1300.

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Diode reverse recovery current dissipation is the most important source of power dissipation for diodes used in fast switching converters or other power devices applications. As the reverse recovery current can peak at very high currents, this may cause the failures of other devices in the circuit. Therefore the Diode Reverse Recovery phenomena should no longer be ignored in device model and circuit simulations employing diodes. Automatic measurement of Diode Reverse Recovery time is becoming essential for mass production industrial process monitoring and device modeling. In this paper, a novel Sagittarius automatic Diode Reverse Recovery Time Measurement System was developed. This system has enabled the automation measurement and improved the measurement speed for about 5-7 times. A new Verilog A Diode Reverse Recovery model which can reflect the actual device characteristics was developed base on the data measured using this new system.

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6

Shao, Wei Hua, Xiao Ling Li, Hua Ping Jiang, Xuan Guo, Zheng Zeng, Li Ran, and Philip A. Mawby. "Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode." Materials Science Forum 963 (July 2019): 873–77. http://dx.doi.org/10.4028/www.scientific.net/msf.963.873.

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The nature of diode reverse recovery is analyzed in this paper, and the reverse recovery loss is evaluated in a BOOST PFC converter using a silicon (Si) or silicon carbide (SiC) diode in the forward branch. Mathematical models of the forward conduction and reverse recovery losses are established to assess the influence of Si and SiC diodes. To characterize and quantify the losses related to diode reverse recovery, an 85~265V AC to 400V DC, 2kW BOOST PFC prototype is built with switching frequencies of 65kHz. It is found that the reverse-recovery inherent in a Si diode cannot be neglected. The switching loss is substantially smaller when the diode is a SiC one. In order to investigate further, a double pulse test rig is established, with the switch and the diode being either Si or SiC. The experimental results demonstrate that with a SiC diode, not only the diode conduction losses but also the transistor turn-on loss is greatly reduced.

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7

Anwar, Mohammed Sadique, Prima Sukma Permata, Md Imran Siddiqui, Jung Ruey Tsai, Shao Ming Yang, and Gene Sheu. "Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery." Applied Mechanics and Materials 229-231 (November 2012): 2077–81. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2077.

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This work demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Qrr) increased linearly with number of fingers, device width and inductance.

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8

Lee, Kwang H., Aaron Park, Seongil Im, Yerok Park, Su H. Kim, Myung M. Sung, and Seungjun Lee. "Advantageous Reverse Recovery Behavior of Pentacene/ZnO Diode." Electrochemical and Solid-State Letters 13, no. 8 (2010): H261. http://dx.doi.org/10.1149/1.3428743.

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9

Asano, Katsunori, Atsushi Tanaka, Shuuji Ogata, Koji Nakayama, and Yoichi Miyanagi. "Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode." Materials Science Forum 717-720 (May 2012): 965–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.965.

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The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state loss by electron irradiation.

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10

Rahimo, M. T., and N. Y. A. Shammas. "Freewheeling diode reverse-recovery failure modes in IGBT applications." IEEE Transactions on Industry Applications 37, no. 2 (2001): 661–70. http://dx.doi.org/10.1109/28.913734.

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11

Wei Wen, Yim-Shu Lee, M. H. L. Chow, and D. K. W. Cheng. "Interleaved boost converter with zero diode reverse-recovery loss." IEEE Transactions on Aerospace and Electronic Systems 40, no. 4 (October 2004): 1271–85. http://dx.doi.org/10.1109/taes.2004.1386880.

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12

Wang, Bo. "Analysis of Reverse Recovery Characteristics of Anti-parallel Diode." IOP Conference Series: Earth and Environmental Science 766, no. 1 (June 1, 2021): 012046. http://dx.doi.org/10.1088/1755-1315/766/1/012046.

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13

Nakayama, Koji, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, and Tomonori Nakamura. "Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation." Materials Science Forum 527-529 (October 2006): 1359–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1359.

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Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.

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14

Elpelt, Rudolf, Bernd Zippelius, and Daniel Domes. "Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET." Materials Science Forum 858 (May 2016): 817–20. http://dx.doi.org/10.4028/www.scientific.net/msf.858.817.

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In switching applications with half-bridge like configurations the load current is commutated to the so-called reverse or body-diode of a switching device once each switching cycle. The bipolar charge generated in the switch in principle leads to a reverse recovery current and to additional losses. Though it is well known, that in silicon carbide these reverse recovery losses are very low compared to e.g. silicon devices, it turns out that depending on device structure and switching conditions the reverse recovery charge for the JFET may become larger than can be explainable by the stored bipolar charge. In this paper therefore we focus on a simulation study comparing the body-diode operation of common lateral channel silicon carbide JFET and MOSFET devices in a so-called double pulse measurement. It is shown, that the MOSFET body-diode operation still remains uncritical under very fast switching conditions, while the JFET body-diode exhibits a pronounced recovery current peak originating from a partial channel turn-on, and thus higher losses.

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15

Yang, Tian Peng, and Qi Shuang Ma. "Modeling of the Diode for Electromagnetic Compatibility (EMC) Based on Saber." Advanced Materials Research 462 (February 2012): 512–15. http://dx.doi.org/10.4028/www.scientific.net/amr.462.512.

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The diode model for EMC is built on the basis of lumped charge model. The model consists of forward recovery, reverse recovery and carrier recombination and is completed by MAST modeling language in Saber. The simulation results show that this model describes the forward and reverse recovery correctly.

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16

Tsukuda, M., K. Kawakami, K. Takahama, and I. Omura. "“Design for EMI” approach on power PiN diode reverse recovery." Microelectronics Reliability 51, no. 9-11 (September 2011): 1972–75. http://dx.doi.org/10.1016/j.microrel.2011.07.012.

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17

Ma, C. L., and P. O. Lauritzen. "A simple power diode model with forward and reverse recovery." IEEE Transactions on Power Electronics 8, no. 4 (October 1993): 342–46. http://dx.doi.org/10.1109/63.261002.

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18

Hahmady, Sara, and Stephen Bayne. "Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode." IEEE Access 8 (2020): 170588–94. http://dx.doi.org/10.1109/access.2020.3023641.

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19

Strollo, A. G. M. "Calculation of power diode reverse-recovery time for SPICE simulations." Electronics Letters 30, no. 14 (July 7, 1994): 1109–10. http://dx.doi.org/10.1049/el:19940770.

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20

Tseng, K. J., and S. Pan. "Modified charge-control equation for simulation of diode reverse recovery." Electronics Letters 32, no. 4 (1996): 404. http://dx.doi.org/10.1049/el:19960210.

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21

Kundu, Utsab, and Parthasarathi Sensarma. "Accurate Estimation of Diode Reverse-Recovery Characteristics From Datasheet Specifications." IEEE Transactions on Power Electronics 33, no. 10 (October 2018): 8220–25. http://dx.doi.org/10.1109/tpel.2018.2811380.

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22

Liu, Yue Yang, Hai Long Bao, Wen Yu Gao, Jun Liu, Yao Hua Wang, Rui Jin, Kun Shan Yu, Yu Zhang, and Jia Jie Che. "A Novel Fast Recovery Diode with Lower Emitter Efficiency." Applied Mechanics and Materials 433-435 (October 2013): 2222–26. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.2222.

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In this paper, a new structure of Fast Recovery Diode (FRD) and its manufacture methods were investigated. The active region designed by TCAD simulation software could achieve low emitter injection efficiency, and then reduce the peak reverse recovery current, improve the reverse recovery softness and increase working stability. Meanwhile, the effect of the P-body dose and carrier lifetime on the turn-off characteristic of FRD was also discussed. Taking an example of 3300V voltage grade devices for FRD, the reasonable P-body dose and carrier lifetime on the basis of the new structure were confirmed by simulations. This diode was suitable for the anti-parallel with power switch device (such as IGBT, GTO, etc.).

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23

Nakayama, Koji, Shuji Ogata, Toshihiko Hayashi, Tetsuro Hemmi, Atsushi Tanaka, Toru Izumi, Katsunori Asano, et al. "High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode." Materials Science Forum 778-780 (February 2014): 841–44. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.841.

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The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

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24

Nakayama, Koji, Atsushi Tanaka, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, and Hidekazu Tsuchida. "Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation." Materials Science Forum 717-720 (May 2012): 989–92. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.989.

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The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of diodes with the standard process or carbon implantation at room temperature show almost the same tendency. In the reverse recovery characteristics at 250 oC, pin diodes with carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics indicate that a recombination path other than the bulk carrier lifetime, such as the interfaces or the surface recombination, becomes dominant in the reverse recovery characteristics at room temperature.

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25

Kim, Junghun, and Kwangsoo Kim. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance." Energies 13, no. 18 (September 4, 2020): 4602. http://dx.doi.org/10.3390/en13184602.

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In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body diodes. The switching characteristics of the proposed MOSFET using the heterojunction diode as a freewheeling diode was compared to the power module with a conventional MOSFET and an external diode as a freewheeling diode. It is shown that the switching performance of the proposed structure exhibits equivalent characteristics compared to the power module, enabling the elimination of an external freewheeling diode in the power system.

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26

Xue, Peng, and Guicui Fu. "Analysis of the reverse recovery oscillation of superjunction MOSFET body diode." Solid-State Electronics 129 (March 2017): 81–87. http://dx.doi.org/10.1016/j.sse.2016.12.014.

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27

Liang, Y. C., and V. J. Gosbell. "Diode forward and reverse recovery model for power electronic SPICE simulations." IEEE Transactions on Power Electronics 5, no. 3 (July 1990): 346–56. http://dx.doi.org/10.1109/63.56526.

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28

Conway, N. J., and J. G. Lacy. "Integrated reverse-recovery model of the power bipolar diode for SPICE3." Electronics Letters 29, no. 15 (1993): 1392. http://dx.doi.org/10.1049/el:19930933.

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29

Ivanov, Pavel A., Oleg Kon'kov, Tatyana Samsonova, Alexander Potapov, and Igor Grekhov. "Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes." Materials Science Forum 858 (May 2016): 761–64. http://dx.doi.org/10.4028/www.scientific.net/msf.858.761.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) [1]. When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay between forward and reverse pulses.

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30

Sato, Shinji, Fumiki Kato, Hiroshi Hozoji, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET." Materials Science Forum 1004 (July 2020): 1115–22. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1115.

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In the conventional SiC-MOSFET, a PN junction diode is included between the source and drain. This P-N junction diode not only causes device degradation, but also generates a large reverse recovery surge voltage during high temperature operation. This surge voltage increases the electrical stress of the power converter, causing dielectric breakdown and control malfunction. We have developed a SBD integrated SiC-MOSFET. This MOSFET reduces the occurrence of reverse recovery surge voltage during high-temperature operation caused by inactivating the included PN junction diode. In this paper, we discuss the characteristics of the inverter composed of the developed SiC-MOSFET in high-temperature operation. As a result, the inverter using a SBD integrated SiC-MOSFET with the PN junction diode deactivated was able to reduce surge voltage at high temperature operation.

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31

Hayashi, Tetsuya, Hideaki Tanaka, Yoshio Shimoida, Satoshi Tanimoto, and Masakatsu Hoshi. "New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode." Materials Science Forum 483-485 (May 2005): 953–56. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.953.

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We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

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32

Irie, Hisaichi. "Additional Switching Loss Caused by Reverse Recovery Time of Free-Wheering Diode." IEEJ Transactions on Power and Energy 106, no. 3 (1986): 293. http://dx.doi.org/10.1541/ieejpes1972.106.293.

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33

Busatto, G., G. V. Persiano, A. G. M. Strollo, and P. Spirito. "Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode." Microelectronics Reliability 37, no. 10-11 (October 1997): 1507–10. http://dx.doi.org/10.1016/s0026-2714(97)00096-6.

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34

Li, Ping, Jingwei Guo, Shengdong Hu, Zhi Lin, and Fang Tang. "A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode." IEEE Transactions on Electron Devices 66, no. 10 (October 2019): 4309–13. http://dx.doi.org/10.1109/ted.2019.2936584.

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35

Shenai, K., and B. J. Baliga. "Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics." IEEE Transactions on Electron Devices 37, no. 4 (April 1990): 1167–69. http://dx.doi.org/10.1109/16.52458.

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36

Machida, Satoru, Yusuke Yamashita, Tadashi Misumi, and Takahide Sugiyama. "Effects of Trap Levels on Reverse Recovery Surge of Silicon Power Diode." Japanese Journal of Applied Physics 52, no. 4S (April 1, 2013): 04CP01. http://dx.doi.org/10.7567/jjap.52.04cp01.

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37

Park, Su-Mi, and Hong-Je Ryoo. "Pulsed Power Modulator With Active Pull-Down Using Diode Reverse Recovery Time." IEEE Transactions on Power Electronics 35, no. 3 (March 2020): 2943–49. http://dx.doi.org/10.1109/tpel.2019.2924586.

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38

Zha, Fengwei. "Research on transient simulation model of high power diode for commutating over-voltage." Modern Physics Letters B 32, no. 34n36 (December 30, 2018): 1840078. http://dx.doi.org/10.1142/s021798491840078x.

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Large transient surges called commutating over-voltage may be generated during the reverse recovery process of diode, which poses a severe threat to the system reliability. However, the commutating over-voltage theoretical calculations are so complicated that it is inconvenient to apply to engineering practice. The characteristics of diode commutating over-voltage are studied by using transient model simulation method. The diode simulation model including reverse recovery characteristics is created by adding a resistance, an inductance and a controlled current source to a common diode simulation model. By taking 1 kV/120 kA DC test system as the research object, the simulation model is created and a commutating over-voltage experiment has been carried out, the relative error between simulation value and measured value is within 8%. It turns out that the transient simulation model not only meets engineering accuracy requirement but also avoids complicated calculations.

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39

Korolkov, Oleg, Natalja Sleptsuk, Paul Annus, Raul Land, and Toomas Rang. "High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes." Materials Science Forum 858 (May 2016): 790–94. http://dx.doi.org/10.4028/www.scientific.net/msf.858.790.

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In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

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40

Kitai, Hidenori, Yasuo Hozumi, Hiromu Shiomi, Masaki Furumai, Kazuhiko Omote, and Kenji Fukuda. "Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension." Materials Science Forum 897 (May 2017): 451–54. http://dx.doi.org/10.4028/www.scientific.net/msf.897.451.

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The static and dynamic characteristics of 13-kV class 4H-SiC junction barrier Schottky (JBS) diodes with a three-zone junction termination extension (JTE) are presented. Using an anisotropy breakdown model, technology computer-aided design simulation of devices with a three-zone JTE agrees well with the obtained experimental results, correctly predicting a sharp drop in blocking voltage at high JTE acceptor concentrations. The forward voltage of the JBS diode at 75°C and a forward current of 500 mA is reduced to approximately one-ninth by that of 13 series-connected 1000-V Si PiN diodes. This suggests that conduction losses of traditional high-voltage circuits which conventionally use series-connected devices can be drastically reduced by replacing the series-connected devices with a single 13-kV class SiC JBS diode. Moreover, the reverse recovery current waveform of the 13-kV class SiC JBS diode shows that these diodes have lower reverse recovery losses than a 13-kV SiC PiN diode.

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41

Ivanov, Pavel A., and Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode." Materials Science Forum 740-742 (January 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm2 peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5 - 25 kA/cm2 in a time less than 0.3 ns.

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42

Choi, Woo-Young, Jung-Min Kwon, Eung-Ho Kim, Jong-Jae Lee, and Bong-Hwan Kwon. "Bridgeless Boost Rectifier With Low Conduction Losses and Reduced Diode Reverse-Recovery Problems." IEEE Transactions on Industrial Electronics 54, no. 2 (April 2007): 769–80. http://dx.doi.org/10.1109/tie.2007.891991.

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43

Hagino, Hiroyasu, and Noriyuki Soejima. "Analysis of Soft Reverse Recovery of Diode and the 2 Step Gradient Structure." IEEJ Transactions on Electronics, Information and Systems 115, no. 6 (1995): 835–44. http://dx.doi.org/10.1541/ieejeiss1987.115.6_835.

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44

Lin, Zhi, Shengdong Hu, Qi Yuan, Xichuan Zhou, and Fang Tang. "Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode." IEEE Electron Device Letters 38, no. 8 (August 2017): 1059–62. http://dx.doi.org/10.1109/led.2017.2713519.

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45

Garg, Sahil, Bipan Kaushal, Sanjeev Kumar, Shahrir Rizal Kasjoo, Santanu Mahapatra, and Arun K. Singh. "Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode." IEEE Transactions on Nanotechnology 18 (2019): 925–31. http://dx.doi.org/10.1109/tnano.2019.2939199.

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46

Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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Chen, Gang, Song Bai, A. Liu, Lin Wang, Run Hua Huang, Yong Hong Tao, and Yun Li. "Fabrication and Application of 1.7KV SiC-Schottky Diodes." Materials Science Forum 821-823 (June 2015): 579–82. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.579.

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High voltage 4H-SiC Ti Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5A/cm2at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF= 1.7 V and 15.8 A at VF= 3 V. The active area is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 3.08 mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 17 µm, and the doping concentration is 3.2 × 1015cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 µm ~ 1.3 µm and the width of the p-rings is 2.5 µm. We use the PECVD SixNy/SiO2as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse recovery current Irwas 1.26A and the reverse recovery time Trrwas 26ns when the diode was switched from 5A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrrof 16nC was obtained.

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Tarr, N. Garry. "Noninjecting, high-barrier junctions on p-type silicon." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 723–26. http://dx.doi.org/10.1139/p85-114.

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The fabrication of junctions with very low minority-carrier injection ratios and reasonably good diode characteristics on p-type silicon is reported. These junctions were formed by growing an ultrathin oxide layer on a monocrystalline substrate, depositing polysilicon heavily doped in situ with phosphorus over the oxide, overlaying the polysilicon with aluminum, and then annealing the resulting sandwich structure at temperatures in the range 400–450 °C. The junctions can exhibit leakage current densities below 10−6 A∙cm−2 at moderate reverse bias and reverse breakdown voltages in excess of 20 V. The absence of minority-carrier injection has been demonstrated by diode reverse recovery transient measurements and by the fabrication of bipolar transistors employing these junctions as emitters.

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Zhang, Q. J., G. Wang, Charlotte Jonas, Craig Capell, Steve Pickle, P. Butler, Daniel J. Lichtenwalner, et al. "Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed." Materials Science Forum 897 (May 2017): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.897.521.

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Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

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Lee, Byung-Hwa, Doo-Hyung Cho, and Kwang-Soo Kim. "50V Power MOSFET with Improved Reverse Recovery Characteristics Using an Integrated Schottky Body Diode." Journal of IKEEE 19, no. 1 (March 31, 2015): 94–100. http://dx.doi.org/10.7471/ikeee.2015.19.1.094.

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