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Journal articles on the topic 'Resonantly enhanced modulators'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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1

Visagathilagar, Y. S., T. G. Nguyen, A. A. Mitchell, and M. W. Austin. "Systematic design approach for optimized resonantly enhanced Mach-zehnder Modulators." Journal of Lightwave Technology 24, no. 1 (January 2006): 555–62. http://dx.doi.org/10.1109/jlt.2005.860162.

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2

Thach Giang Nguyen, Y. S. Visagathilagar, and A. Mitchell. "Sensitivity analysis of process variations for resonantly enhanced modulators on LiNbO/sub 3/." Journal of Lightwave Technology 24, no. 5 (May 2006): 2199–206. http://dx.doi.org/10.1109/jlt.2006.872270.

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3

Gopalakrishnan, G. K., and W. K. Burns. "Performance and modeling of resonantly enhanced LiNbO/sub 3/ modulators for low-loss analog fiber-optic links." IEEE Transactions on Microwave Theory and Techniques 42, no. 12 (1994): 2650–56. http://dx.doi.org/10.1109/22.339810.

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4

Nguyen, T. G., A. Mitchell, and Y. S. Visagathilagar. "Investigation of Resonantly Enhanced Modulators on<tex>$hboxLiNbO_3$</tex>Using FEM and Numerical Optimization Technique." Journal of Lightwave Technology 22, no. 2 (February 2004): 526–33. http://dx.doi.org/10.1109/jlt.2003.821746.

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5

Shum, Chi Man, and Edward A. Whittaker. "Resonantly enhanced radio frequency electrooptic phase modulator." Applied Optics 29, no. 3 (January 20, 1990): 422. http://dx.doi.org/10.1364/ao.29.000422.

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6

Thach Giang Nguyen, A. Mitchell, and Y. S. Visagathilagar. "Demonstration of a numerically optimized resonantly enhanced Mach-zehnder Modulator." IEEE Photonics Technology Letters 18, no. 3 (February 2006): 454–56. http://dx.doi.org/10.1109/lpt.2005.863174.

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7

Ljungblad, Ulric, Tomas Lock, and Tor Sandstrom. "Resonantly enhanced addressing of a spatial light modulator micro-mirror array." Microelectronic Engineering 83, no. 4-9 (April 2006): 663–66. http://dx.doi.org/10.1016/j.mee.2005.12.031.

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8

Romero-García, Sebastian, Alvaro Moscoso-Mártir, Saeed Sharif Azadeh, Juliana Müller, Bin Shen, Florian Merget, and Jeremy Witzens. "High-speed resonantly enhanced silicon photonics modulator with a large operating temperature range." Optics Letters 42, no. 1 (December 22, 2016): 81. http://dx.doi.org/10.1364/ol.42.000081.

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9

Ju, Gun Wu, Byung Hoon Na, Yong-Hwa Park, Young Min Song, and Yong Tak Lee. "Recent Approaches for Broadening the Spectral Bandwidth in Resonant Cavity Optoelectronic Devices." Advances in Condensed Matter Physics 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/605170.

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Resonant cavity optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs), resonant cavity enhanced photodetectors (RCEPDs), and electroabsorption modulators (EAMs), show improved performance over their predecessors by placing the active device structure inside a resonant cavity. The effect of the optical cavity, which allows wavelength selectivity and enhancement of the optical field due to resonance, allows the devices to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. However, the narrow spectral bandwidth significantly reduces operating tolerances, which leads to severe problems in applications such as optical communication, imaging, and biosensing. Recently, in order to overcome such drawbacks and/or to accomplish multiple functionalities, several approaches for broadening the spectral bandwidth in resonant cavity optoelectronic devices have been extensively studied. This paper reviews the recent progress in techniques for wide spectral bandwidth that include a coupled microcavity, asymmetric tandem quantum wells, and high index contrast distributed Bragg-reflectors. This review will describe design guidelines for specific devices together with experimental considerations in practical applications.
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10

ZHANG, KE, HONGLI WANG, CHUN QIAO, and QI OUYANG. "NOISE INDUCED RESONANT TRANSITION BETWEEN TURING PATTERNS." International Journal of Modern Physics B 21, no. 15 (June 10, 2007): 2615–24. http://dx.doi.org/10.1142/s0217979207037259.

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We report a noise assisted and optimized resonant transition behavior between two metastable Turing pattern states in a piecewise FitzHu–Nagumo model. The response of the bistable Turing system to a weak periodic signal which modulates the attraction domain of the piecewise function is enhanced with the addition of noise. The quantity that measures the resonant transition between the bistable states and the periodicity of the Turing pattern shows a tent-shape dependence on the intensity of noise, which is the fingerprint of stochastic resonance. As the frequency of the signal is increased to be high enough, the coherent transition disappears.
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11

Zhang, Yaxin, Yuncheng Zhao, Shixiong Liang, Bo Zhang, Lan Wang, Tianchi Zhou, Wei Kou, et al. "Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface." Nanophotonics 8, no. 1 (November 27, 2018): 153–70. http://dx.doi.org/10.1515/nanoph-2018-0116.

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AbstractTerahertz (THz) science and technology promise unique applications in high-speed communications, high-accuracy imaging, and so on. To keep up with the demand for THz systems, THz dynamic devices should feature large phase shift modulation and high speed. To date, however, only a few devices can efficiently manipulate the phase of THz waves. In this paper, we demonstrate that efficient phase modulation of THz waves can be addressed by an active and enhanced resonant metamaterial embedded with a nanostructured 2D electron gas (2DEG) layer of a GaN high electron mobility transistor (HEMT). The enhanced resonant metaunit couples the traditional dipolar and inductance-capacitance resonances together to realize a coupling mode with enhanced resonance. Embedded with the nanostructured 2DEG layer of GaN HEMT, the resonance intensity and surface current circuit of the enhanced resonant mode in the metamaterial unit can be dynamically manipulated by the electrical control of the carrier distribution and depletion of the 3 nm 2DEG, leading to a phase shift greater than 150° in simulation. In the dynamic experiments, a 137° phase shift was achieved with an external controlling voltage of only several volts in the THz transmission mode. This work represents the first realization of a phase shift greater than 100° in a dynamic experiment in transmission mode using an active metamaterial structure with only a single layer. In addition, given the high-speed modulation ability of the HEMT, this concept provides a promising approach for the development of a fast and effective phase modulator in THz application systems.
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12

Nayak, Maheswar, P. C. Pradhan, and G. S. Lodha. "Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity." Journal of Applied Crystallography 48, no. 3 (May 9, 2015): 786–96. http://dx.doi.org/10.1107/s1600576715005877.

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Element-specific structural analysis at the buried interface of a low electron density contrast system is important in many applied fields. The analysis of nanoscaled Si/B4C buried interfaces is demonstrated using resonant X-ray reflectivity. This technique combines information about spatial modulations of charges provided by scattering, which is further enhanced near the resonance, with the sensitivity to electronic structure provided by spectroscopy. Si/B4C thin-film structures are studied by varying the position of B4C in Si layers. Measured values of near-edge optical properties are correlated with the resonant reflectivity profile to quantify the element-specific composition. It is observed that, although Si/B4C forms a smooth interface, there are chemical changes in the sputtered B4C layer. Nondestructive quantification of the chemical changes and the spatial distribution of the constituents is reported.
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13

Xiao-Hong, Yang, Han Qin, Ni Hai-Qiao, Huang She-Song, Du Yun, Peng Hong-Ling, Xiong Yong-Hua, Niu Zhi-Chuan, and Wu Rong-Han. "Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells." Chinese Physics Letters 23, no. 12 (November 29, 2006): 3376–79. http://dx.doi.org/10.1088/0256-307x/23/12/071.

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14

Li, Yuyu, Khwanchai Tantiwanichapan, Anna K. Swan, and Roberto Paiella. "Graphene plasmonic devices for terahertz optoelectronics." Nanophotonics 9, no. 7 (May 14, 2020): 1901–20. http://dx.doi.org/10.1515/nanoph-2020-0211.

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AbstractPlasmonic excitations, consisting of collective oscillations of the electron gas in a conductive film or nanostructure coupled to electromagnetic fields, play a prominent role in photonics and optoelectronics. While traditional plasmonic systems are based on noble metals, recent work has established graphene as a uniquely suited materials platform for plasmonic science and applications due to several distinctive properties. Graphene plasmonic oscillations exhibit particularly strong sub-wavelength confinement, can be tuned dynamically through the application of a gate voltage, and span a portion of the infrared spectrum (including mid-infrared and terahertz (THz) wavelengths) that is not directly accessible with noble metals. These properties have been studied in extensive theoretical and experimental work over the past decade, and more recently various device applications are also beginning to be explored. This review article is focused on graphene plasmonic nanostructures designed to address a key outstanding challenge of modern-day optoelectronics – the limited availability of practical, high-performance THz devices. Graphene plasmons can be used as a means to enhance light–matter interactions at THz wavelengths in a highly tunable fashion, particularly through the integration of graphene resonant structures with additional nanophotonic elements. This capability is ideally suited to the development of THz optical modulators (where absorption is switched on and off by tuning the plasmonic resonance) and photodetectors (relying on plasmon-enhanced intraband absorption or rectification of charge-density waves), and promising devices based on these principles have already been reported. Novel radiation mechanisms, including light emission from electrically excited graphene plasmons, are also being explored for the development of compact narrowband THz sources.
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15

Qin, Feng, Zeqiang Chen, Xifang Chen, Zao Yi, Weitang Yao, Tao Duan, Pinghui Wu, Hua Yang, Gongfa Li, and Yougen Yi. "A Tunable Triple-Band Near-Infrared Metamaterial Absorber Based on Au Nano-Cuboids Array." Nanomaterials 10, no. 2 (January 24, 2020): 207. http://dx.doi.org/10.3390/nano10020207.

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In this article, we present a design for a triple-band tunable metamaterial absorber with an Au nano-cuboids array, and undertake numerical research about its optical properties and local electromagnetic field enhancement. The proposed structure is investigated by the finite-difference time domain (FDTD) method, and we find that it has triple-band tunable perfect absorption peaks in the near infrared band (1000–2500 nm). We investigate some of structure parameters that influence the fields of surface plasmons (SP) resonances of the nano array structure. By adjusting the relevant structural parameters, we can accomplish the regulation of the surface plasmons resonance (SPR) peaks. In addition, the triple-band resonant wavelength of the absorber has good operational angle-polarization-tolerance. We believe that the excellent properties of our designed absorber have promising applications in plasma-enhanced photovoltaic, optical absorption switching and infrared modulator optical communication.
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16

Jacqueline, Sébastien, Catherine Bunel, and Laurent Lengignon. "Enhancement of ESD performances of Silicon Capacitors for RFID solutions." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000085–89. http://dx.doi.org/10.4071/2380-4505-2020.1.000085.

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Abstract Radio-Frequency IDentification devices such as smart cards and RFID tags are based on the presence of a resonant tuned LC circuit associated to the RFID Integrated Circuit (IC). The use of discrete capacitor, external to the IC gives greater flexibility and design freedom. In the race of miniaturization, manufacturers of RFID devices always require smaller electronic components. To save space and in the same time improve performances, capacitors are exposed to height and volume constraints. In the same time, the capacitor has to withstand ESD stresses that can occur during the assembly of the device and during operation. Murata has developed a unique thin capacitor technology in silicon. This paper reports the development of a range of low profile capacitors with enhanced ESD performances. The manufacturing process optimization and the design adjustments will be presented here. The process was optimized by taking into account the main electrical parameters: leakage current, breakdown voltage, capacitance density, capacitance accuracy, Equivalent Series Resistance (ESR) and Self-Resonant Frequency (SRF). The dielectric stack was defined in order to integrate up to 330pF in 0402 case. The process architecture, based on accurate planar capacitor with thick dielectric will be discussed. With this architecture there is no constraint to reach low thickness, such as 100μm or even lower. The ESD threshold of each Silicon Capacitor was investigated with design variations associated to Human Body Model measurements. A Single Project Wafer (SPW) was founded with 36 different capacitor designs. Design modulations specifically addressed the orientation and position of the contacts openings. Special care was taken to maximize the width of the contact holes and metal tracks. A mosaic approach, constructed out of a massive network of parallelized elementary cells was also implemented, so that the charges of the ESD pulse do not concentrate at the same place, leading to electrical failure. Examples of defects due to ESD stress will be shown with failure analysis cross-sections and ways to enhance the ESD threshold by design will be illustrated.
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17

Yang, Jianfan, Tian Qin, Fangxing Zhang, Xianfeng Chen, Xiaoshun Jiang, and Wenjie Wan. "Multiphysical sensing of light, sound and microwave in a microcavity Brillouin laser." Nanophotonics 9, no. 9 (June 24, 2020): 2915–25. http://dx.doi.org/10.1515/nanoph-2020-0176.

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AbstractLight, sound, and microwave are important tools for many interdisciplinary applications in a multi-physical environment, and they usually are inefficient to be detected simultaneously in the same physical platform. However, at the microscopic scale, these waves can unexpectedly interact with the same microstructure through resonant enhancement, making it a unique hybrid micro-system for new applications across multiple physical channels. Here we experimentally demonstrate an optomechanical microdevice based on Brillouin lasing operation in an optical microcavity as a sensitive unit to sense external light, sound, and microwave signals in the same platform. These waves can induce modulations to the microcavity Brillouin laser (MBL) in a resonance-enhanced manner through either the pressure forces including radiation pressure force or thermal absorption, allowing several novel applications such as broadband non-photovoltaic detection of light, sound-light wave mixing, and deep-subwavelength microwave imaging. These results pave the way towards on-chip integrable optomechanical solutions for sensing, free-space secure communication, and microwave imaging.
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18

Grinblat, Gustavo, Haizhong Zhang, Michael P. Nielsen, Leonid Krivitsky, Rodrigo Berté, Yi Li, Benjamin Tilmann, et al. "Efficient ultrafast all-optical modulation in a nonlinear crystalline gallium phosphide nanodisk at the anapole excitation." Science Advances 6, no. 34 (August 2020): eabb3123. http://dx.doi.org/10.1126/sciadv.abb3123.

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High–refractive index nanostructured dielectrics have the ability to locally enhance electromagnetic fields with low losses while presenting high third-order nonlinearities. In this work, we exploit these characteristics to achieve efficient ultrafast all-optical modulation in a crystalline gallium phosphide (GaP) nanoantenna through the optical Kerr effect (OKE) and two-photon absorption (TPA) in the visible/near-infrared range. We show that an individual GaP nanodisk can yield differential reflectivity modulations of up to ~40%, with characteristic modulation times between 14 and 66 fs, when probed at the anapole excitation (AE). Numerical simulations reveal that the AE represents a unique condition where both the OKE and TPA contribute with the same modulation sign, maximizing the response. These findings highly outperform previous reports on sub–100-fs all-optical switching from resonant nanoscale dielectrics, which have demonstrated modulation depths no larger than 0.5%, placing GaP nanoantennas as a promising choice for ultrafast all-optical modulation at the nanometer scale.
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19

Ullah, Zaka, Gunawan Witjaksono, Illani Nawi, Nelson Tansu, Muhammad Irfan Khattak, and Muhammad Junaid. "A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications." Sensors 20, no. 5 (March 4, 2020): 1401. http://dx.doi.org/10.3390/s20051401.

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Exceptional advancement has been made in the development of graphene optical nanoantennas. They are incorporated with optoelectronic devices for plasmonics application and have been an active research area across the globe. The interest in graphene plasmonic devices is driven by the different applications they have empowered, such as ultrafast nanodevices, photodetection, energy harvesting, biosensing, biomedical imaging and high-speed terahertz communications. In this article, the aim is to provide a detailed review of the essential explanation behind graphene nanoantennas experimental proofs for the developments of graphene-based plasmonics antennas, achieving enhanced light–matter interaction by exploiting graphene material conductivity and optical properties. First, the fundamental graphene nanoantennas and their tunable resonant behavior over THz frequencies are summarized. Furthermore, incorporating graphene–metal hybrid antennas with optoelectronic devices can prompt the acknowledgment of multi-platforms for photonics. More interestingly, various technical methods are critically studied for frequency tuning and active modulation of optical characteristics, through in situ modulations by applying an external electric field. Second, the various methods for radiation beam scanning and beam reconfigurability are discussed through reflectarray and leaky-wave graphene antennas. In particular, numerous graphene antenna photodetectors and graphene rectennas for energy harvesting are studied by giving a critical evaluation of antenna performances, enhanced photodetection, energy conversion efficiency and the significant problems that remain to be addressed. Finally, the potential developments in the synthesis of graphene material and technological methods involved in the fabrication of graphene–metal nanoantennas are discussed.
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20

Hamza, A. M., and W. Lyatsky. "The Alfvén resonator revisited." Annales Geophysicae 28, no. 2 (February 2, 2010): 359–66. http://dx.doi.org/10.5194/angeo-28-359-2010.

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Abstract. Two models for a magnetosphere-ionosphere coupling feedback instability in the lower magnetosphere are studied. In both models the instability arises because of the generation of an Alfvén wave from growing arc-like structures in the ionospheric conductivity. The first model is based on the modulation of precipitating electrons by field-aligned currents of the upward moving Alfvén wave (Modulation Model). The second model takes into consideration the reflection of the Alfvén wave from a maximum of the Alfvén velocity at about 3000 km altitude (Reflection Model). The growth of structures in both models takes place when the ionization function associated with upward field aligned current is shifted from the edges of enhanced conductivity structures to their centers. Such a shift arises because the structures move along the ionosphere at a velocity different from the E×B drift velocity. As a result, field-aligned currents of upward propagating Alfvén wave at some altitude appear shifted with respect to the edges of the structures. Although both models may work, the growth rate for the first model, as based on the modulation of the precipitating accelerated electrons, for typical conditions, may be tens or more times larger than that for the second model based on the Alfvén wave reflection. The proposed models can provide the growth of both single and periodic structures. When applied to auroral arc generation the studied instability leads to high growth rates and narrow arcs. The physical mechanism is mostly suitable for the generation of auroral arcs with widths of the order of 1 km and less. The growth rate of the instability for such structures can be as large as 0.3 s−1. In the case of periodic structures, their motion must lead to the generation of magnetic pulsations with periods of about 1–6 s, which is close to the expected period of Alfvén resonant oscillations in the lower magnetosphere. However, these oscillations (for the first and most effective model MM) are not exactly Alfvén resonant oscillations. These oscillations are modulations in the ionospheric density, which propagate along the ionospheric currents and not along the magnetic field lines.
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21

Dwivedi, Ankur, Arnab Banerjee, Sondipon Adhikari, and Bishakh Bhattacharya. "Optimal electromechanical bandgaps in piezo-embedded mechanical metamaterials." International Journal of Mechanics and Materials in Design 17, no. 2 (February 13, 2021): 419–39. http://dx.doi.org/10.1007/s10999-021-09534-0.

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AbstractElastic mechanical metamaterials are the exemplar of periodic structures. These are artificially designed structures having idiosyncratic physical properties like negative mass and negative Young’s modulus in specific frequency ranges. These extreme physical properties are due to the spatial periodicity of mechanical unit cells, which exhibit local resonance. That is why scientists are researching the dynamics of these structures for decades. This unusual dynamic behavior is frequency contingent, which modulates wave propagation through these structures. Locally resonant units in the designed metamaterial facilitate bandgap formation virtually at any frequency for wavelengths much higher than the lattice length of a unit. Here, we analyze the band structure of piezo-embedded negative mass metamaterial using the generalized Bloch theorem. For a finite number of the metamaterial units coupled equation of motion of the system is deduced, considering purely resistive and shunted inductor energy harvesting circuits. Successively, the voltage and power produced by piezoelectric material along with transmissibility of the system are computed using the backward substitution method. The addition of the piezoelectric material at the resonating unit increases the complexity of the solution. The results elucidate, the insertion of the piezoelectric material in the resonating unit provides better tunability in the band structure for simultaneous energy harvesting and vibration attenuation. Non-dimensional analysis of the system gives physical parameters that govern the formation of mechanical and electromechanical bandgaps. Optimized numerical values of these system parameters are also found for maximum first attenuation bandwidth. Thus, broader bandgap generation enhances vibration attenuation, and energy harvesting can be simultaneously available, making these structures multifunctional. This exploration can be considered as a step towards the active elastic mechanical metamaterials design.
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22

"Finite amplitude thermal convection with spatially modulated boundary temperatures." Proceedings of the Royal Society of London. Series A: Mathematical and Physical Sciences 449, no. 1937 (June 8, 1995): 459–78. http://dx.doi.org/10.1098/rspa.1995.0053.

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Finite amplitude thermal convection in a fluid layer between two horizontal walls with different fixed mean temperatures is considered when spatially modulated temperatures with amplitudes L 1 * and L u * are prescribed at the lower and upper walls, respectively. The nonlinear steady problem is solved by a perturbation technique, and the preferred mode of convection is determined by a stability analysis. In the case of a resonant wavelength excitation, regular or non-regular multi-modal pattern convection can be preferred for some ranges of L 1 * and L u *, provided the wave vectors for such patterns are contained in a certain subset of the wave vectors representing a linear combination of modulated upper and lower boundary temperatures. In the case of non-resonant wavelength excitation, a three (two) dimensional solution in the form of multi-modal (rolls) pattern convection can be preferred, even if the boundary modulations are one (two) or two (one) dimensional, provided the wavelengths of the modulations are not too small. Heat transported by convection can be enhanced by boundary modulations in some ranges of L 1 * and L u *.
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23

Milošević, Milan M., Weining Man, Geev Nahal, Paul J. Steinhardt, Salvatore Torquato, Paul M. Chaikin, Timothy Amoah, Bowen Yu, Ruth Ann Mullen, and Marian Florescu. "Hyperuniform disordered waveguides and devices for near infrared silicon photonics." Scientific Reports 9, no. 1 (December 2019). http://dx.doi.org/10.1038/s41598-019-56692-5.

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AbstractWe introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.
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24

Rueda, Alfredo, William Hease, Shabir Barzanjeh, and Johannes M. Fink. "Electro-optic entanglement source for microwave to telecom quantum state transfer." npj Quantum Information 5, no. 1 (November 28, 2019). http://dx.doi.org/10.1038/s41534-019-0220-5.

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AbstractWe propose an efficient microwave-photonic modulator as a resource for stationary entangled microwave-optical fields and develop the theory for deterministic entanglement generation and quantum state transfer in multi-resonant electro-optic systems. The device is based on a single crystal whispering gallery mode resonator integrated into a 3D-microwave cavity. The specific design relies on a new combination of thin-film technology and conventional machining that is optimized for the lowest dissipation rates in the microwave, optical, and mechanical domains. We extract important device properties from finite-element simulations and predict continuous variable entanglement generation rates on the order of a Mebit/s for optical pump powers of only a few tens of microwatts. We compare the quantum state transfer fidelities of coherent, squeezed, and non-Gaussian cat states for both teleportation and direct conversion protocols under realistic conditions. Combining the unique capabilities of circuit quantum electrodynamics with the resilience of fiber optic communication could facilitate long-distance solid-state qubit networks, new methods for quantum signal synthesis, quantum key distribution, and quantum enhanced detection, as well as more power-efficient classical sensing and modulation.
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