Relevant bibliographies by topics / Resonant transition gate drive

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Resonant transition gate drive'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Resonant transition gate drive"

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Li, Q., and P. Wolfs. "The Power Loss Optimization of a Current Fed ZVS Two-Inductor Boost Converter With a Resonant Transition Gate Drive." IEEE Transactions on Power Electronics 21, no. 5 (September 2006): 1253–63. http://dx.doi.org/10.1109/tpel.2006.880345.

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Li, Quan, and Peter Wolfs. "The resonant half bridge dual converter with a resonant gate drive." Australian Journal of Electrical and Electronics Engineering 1, no. 3 (January 2004): 163–70. http://dx.doi.org/10.1080/1448837x.2004.11464103.

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Arntzen, B., and D. Maksimovic. "Switched-capacitor DC/DC converters with resonant gate drive." IEEE Transactions on Power Electronics 13, no. 5 (September 1998): 892–902. http://dx.doi.org/10.1109/63.712304.

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Zhihua Yang, Sheng Ye, and Yan-Fei Liu. "A New Dual-Channel Resonant Gate Drive Circuit for Low Gate Drive Loss and Low Switching Loss." IEEE Transactions on Power Electronics 23, no. 3 (May 2008): 1574–83. http://dx.doi.org/10.1109/tpel.2008.920877.

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Swamy, Mahesh M., Tsuneo Kume, and Noriyuki Takada. "An Efficient Resonant Gate-Drive Scheme for High-Frequency Applications." IEEE Transactions on Industry Applications 48, no. 4 (July 2012): 1418–31. http://dx.doi.org/10.1109/tia.2012.2200227.

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Yang, Zhihua, Sheng Ye, and Yan-Fei Liu. "A New Resonant Gate Drive Circuit for Synchronous Buck Converter." IEEE Transactions on Power Electronics 22, no. 4 (July 2007): 1311–20. http://dx.doi.org/10.1109/tpel.2007.900560.

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Hattori, Fumiya, Hirokatsu Umegami, and Masayoshi Yamamoto. "Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz." IET Circuits, Devices & Systems 11, no. 3 (January 16, 2017): 261–66. http://dx.doi.org/10.1049/iet-cds.2016.0244.

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Chen, Runruo, and Fang Zheng Peng. "A High-Performance Resonant Gate-Drive Circuit for MOSFETs and IGBTs." IEEE Transactions on Power Electronics 29, no. 8 (August 2014): 4366–73. http://dx.doi.org/10.1109/tpel.2013.2284836.

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Yahaya, N. Z., K. M. Begam, and M. Awan. "The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit." International Journal of Engineering and Technology 2, no. 1 (2010): 17–22. http://dx.doi.org/10.7763/ijet.2010.v2.93.

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Maezawa, Koichi, and Takashi Mizutani. "A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition." Japanese Journal of Applied Physics 32, Part 2, No.1A/B (January 15, 1993): L42—L44. http://dx.doi.org/10.1143/jjap.32.l42.

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Dissertations / Theses on the topic "Resonant transition gate drive"

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LI, QUAN, and q. li@cqu edu au. "HIGH FREQUENCY TRANSFORMER LINKED CONVERTERS FOR PHOTOVOLTAIC APPLICATIONS." Central Queensland University. N/A, 2006. http://library-resources.cqu.edu.au./thesis/adt-QCQU/public/adt-QCQU20060830.110106.

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This thesis examines converter topologies suitable for Module Integrated Converters (MICs) in grid interactive photovoltaic (PV) systems, and makes a contribution to the development of the MIC topologies based on the two-inductor boost converter, which has received less research interest than other well known converters. The thesis provides a detailed analysis of the resonant two-inductor boost converter in the MIC implementations with intermediate constant DC links. Under variable frequency control, this converter is able to operate with a variable DC gain while maintaining the resonant condition. A similar study is also provided for the resonant two-inductor boost converter with the voltage clamp, which aims to increase the output voltage range while reducing the switch voltage stress. An operating point with minimized power loss can be also established under the fixed load condition. Both the hard-switched and the soft-switched current fed two-inductor boost converters are developed for the MIC implementations with unfolding stages. Nondissipative snubbers and a resonant transition gate drive circuit are respectively employed in the two converters to minimize the power loss. The simulation study of a frequency-changer-based two-inductor boost converter is also provided. This converter features a small non-polarised capacitor in a second phase output to provide the power balance in single phase inverter applications. Four magnetic integration solutions for the two-inductor boost converter have also been presented and they are promising in reducing the converter size and power loss.
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Chen, Yuhui. "Resonant Gate Drive Techniques for Power MOSFETs." Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/10099.

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With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.
Master of Science
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Jedi, Hur. "Resonant Gate-Drive Circuits for High-Frequency Power Converters." Wright State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=wright1546870469456974.

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Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.

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Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage controlled and normally-OFF – is the device of choice due to the easeof its implementation in designs using Si IGBTs.In this work the reliability of SiC devices, in particular that of the SiCMOSFET, has been investigated. First, the possibility of paralleling two discreteSiC MOSFETs is investigated and validated through static and dynamictests. Parallel-connection was found to be unproblematic. Secondly, drifts ofthe threshold voltage and forward voltage of the body diode of the SiC MOSFETare investigated through long-term tests. Also these reliability aspectswere found to be unproblematic. Thirdly, the impact of the package on thechip reliability is discussed through a modeling of the parasitic inductancesof a standard module and the impact of those inductances on the gate oxide.The model shows imbalances in stray inductances and parasitic elementsthat are problematic for high-speed switching. A long-term test on the impactof humidity on junction terminations of SiC MOSFETs dies and SiCSchottky dies encapsulated in the same standard package reveals early degradationfor some modules situated outdoors. Then, the short-circuit behaviorof three different types (bipolar junction transistor, junction field-effect transistor,and MOSFET) of 1.2 kV SiC switching devices is investigated throughexperiments and simulations. The necessity to turn OFF the device quicklyduring a fault is supported with a detailed electro-thermal analysis for eachdevice. Design guidelines towards a rugged and fast short-circuit protectionare derived. For each device, a short-circuit protection driver was designed,built and validated experimentally. The possibility of designing diode-lessconverters with SiC MOSFETs is investigated with focus on surge currenttests through the body diode. The discovered fault mechanism is the triggeringof the npn parasitic bipolar transistor. Finally, a life-cycle cost analysis(LCCA) has been performed revealing that the introduction of SiC MOSFETsin already existing IGBT designs is economically interesting. In fact,the initial investment is saved later on due to a higher efficiency. Moreover,the reliability is improved, which is beneficial from a risk-management pointof-view. The total investment over 20 years is approximately 30 % lower fora converter with SiC MOSFETs although the initial converter cost is 30 %higher.
Kiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre.

QC 20170524

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Xu, Kai. "A SERIES-PARALLEL RESONANT TOPOLOGY AND NEW GATE DRIVE CIRCUITS FOR LOW VOLTAGE DC TO DC CONVERTER." Thesis, 2008. http://hdl.handle.net/1974/1008.

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With rapid progress in microelectronics technology, high-performance Integrated Circuits (ICs) bring huge challenge to design the power supplies. Fast loop response is required to handle the high transient current of devices. Power solution size is demanded to reduce due to the size reduction of integrated circuits. The best way to meet these harsh requirements is to increase switching frequency of power supplies. Along with the benefits of increasing switching frequency, the power supplies will suffer from high switching loss and high gate charge loss as these losses are frequency dependant losses. This thesis investigates the best topology to minimize the switching loss. The Series-Parallel Resonant Converter (SPRC) with current-doubler is mainly analyzed for high frequency low voltage high current application. The advantages and disadvantages of SPRC with current-doubler are presented. A new adaptive synchronous rectifiers timing control scheme is also proposed. The proposed timing control scheme demonstrates it can minimize body diode conduction loss of synchronous rectifiers and therefore improve the efficiency of the converter. This thesis also proposes two families of new resonant gate drive circuits. The circuits recover a portion of gate drive energy that is total lost in conventional gate drive circuit. In addition to reducing gate charge loss, it also reduces the switching losses of the power switches. Detail operation principle, loss analysis and design guideline of the proposed drive circuits are provided. Simulation and experimental results are also presented.
Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2008-01-29 22:37:09.812
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Tschirhart, Darryl. "EFFICIENT CONTROL OF THE SERIES RESONANT CONVERTER FOR HIGH FREQUENCY OPERATION." Thesis, 2012. http://hdl.handle.net/1974/7452.

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Improved transient performance and converter miniaturization are the major driving factors behind high frequency operation of switching power supplies. However, high speed operation is limited by topology, control, semiconductor, and packaging technologies. The inherent mitigation of switching loss in resonant converters makes them prime candidates for use when the limits of switching frequency are pushed. The goal of this thesis is to address two areas that practically limit the achievable switching frequency of resonant topologies. Traditional control methods based on single cycle response are impractical at high frequency; forcing the use of pulse density modulation (PDM) techniques. However, existing pulse density modulation strategies for resonant converters in dc/dc applications suffer from: • High semiconductor current stress. • Slow response and large filter size determined by the low modulating frequency. • Possibly operating at fractions of resonant cycles leading to switching loss; thereby limiting the modulating frequency. A series resonant converter with variable frequency PDM (VF-PDM) with integral resonant cycle control is presented to overcome the limitations of existing PDM techniques to enable efficient operation with high switching frequency and modulating frequency. The operation of the circuit is presented and analyzed, with a design procedure given to achieve fast transient performance, small filter size, and high efficiency across the load range with current stress comparable to conventional control techniques. It is shown that digital implementation of the controller can achieve favourable results with a clock frequency four times greater than the switching frequency. Driving the synchronous rectifiers is a considerable challenge in high current applications operating at high switching frequency. Resonant gate drivers with continuous inductor current experience excessive conduction loss, while discontinuous current drivers are subject to slow transitions and high peak current. Current source drivers suffer from high component count and increased conduction loss when applied to complementary switches. A dual-channel current source driver is presented as a means of driving two complementary switches. A single coupled inductor with discontinuous current facilitates low conduction loss by transferring charge between the MOSFET gates to reduce the number of semiconductors in the current path, and reducing the number of conduction intervals. The operation of the circuit is analyzed, and a design procedure based on minimization of the total synchronous rectifier loss is presented. Implementation of the digital logic to control the driver is discussed. Experimental results at megahertz operating frequencies are presented for both areas addressed to verify the theoretical results.
Thesis (Ph.D, Electrical & Computer Engineering) -- Queen's University, 2012-09-09 20:43:56.997
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Conference papers on the topic "Resonant transition gate drive"

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Jedi, Hur, Agasthya Ayachit, and Marian K. Kazimierczuk. "Resonant gate-drive circuit with reduced switching loss." In 2018 IEEE Texas Power and Energy Conference (TPEC). IEEE, 2018. http://dx.doi.org/10.1109/tpec.2018.8312090.

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Boonyaroonate, Wanida, and Viboon Chunkag. "Class E ZVS inverter with matching resonant circuit and resonant gate drive." In 2008 5th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2008. http://dx.doi.org/10.1109/ecticon.2008.4600611.

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Eberle, Wilson, Yan-Fei Liu, and P. C. Sen. "A Resonant Gate Drive Circuit with Reduced MOSFET Switching and Gate Losses." In IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics. IEEE, 2006. http://dx.doi.org/10.1109/iecon.2006.347843.

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Bathily, M., B. Allard, J. Verdier, and F. Hasbani. "Resonant gate drive for silicon integrated DC/DC converters." In 2009 IEEE Energy Conversion Congress and Exposition. ECCE 2009. IEEE, 2009. http://dx.doi.org/10.1109/ecce.2009.5316115.

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Phukan, Hillol, Pranjal Barman, Nilav Rupam Saikia, and Santanu Sharma. "Design and Development of Resonant Gate Drive Circuit for High Power Drive Applications." In 2021 International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT). IEEE, 2021. http://dx.doi.org/10.1109/icaect49130.2021.9392617.

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Xu, K., Y. F. Liu, and P. C. Sen. "A new resonant gate drive circuit with centre-tapped transformer." In 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005. IEEE, 2005. http://dx.doi.org/10.1109/iecon.2005.1568979.

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Swamy, Mahesh, Tsuneo J. Kume, and Noriyuki Takada. "An efficient resonant gate drive scheme for high frequency applications." In 2011 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2011. http://dx.doi.org/10.1109/ecce.2011.6064026.

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Tong, Zikang, Lei Gu, Kawin Surakitbovorn, and Juan M. Rivas-Davila. "Gate Drive for Very Fast Resonant Conversion using SiC Switch." In 2019 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2019. http://dx.doi.org/10.1109/ecce.2019.8912635.

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Grekov, Alexander, Hossein Ali Mohammadpour, Enrico Santi, and Alan Mantooth. "Design considerations for half- and full-bridge resonant gate drive topologies." In 2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2013. http://dx.doi.org/10.1109/pedg.2013.6785594.

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Xu, Kai, Yan-Fei Liu, and P. C. Sen. "A new resonant gate drive circuit utilizing leakage inductance of transformer." In IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics. IEEE, 2006. http://dx.doi.org/10.1109/iecon.2006.348031.

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