Academic literature on the topic 'Resistive random-access memory, ReRAM'
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Journal articles on the topic "Resistive random-access memory, ReRAM"
Kim, Hyojung, Ji Su Han, Sun Gil Kim, Soo Young Kim, and Ho Won Jang. "Halide perovskites for resistive random-access memories." Journal of Materials Chemistry C 7, no. 18 (2019): 5226–34. http://dx.doi.org/10.1039/c8tc06031b.
Full textAkinaga, Hiroyuki, and Hisashi Shima. "Resistive Random Access Memory (ReRAM) Based on Metal Oxides." Proceedings of the IEEE 98, no. 12 (December 2010): 2237–51. http://dx.doi.org/10.1109/jproc.2010.2070830.
Full textShan, Yingying, Zhensheng Lyu, Xinwei Guan, Adnan Younis, Guoliang Yuan, Junling Wang, Sean Li, and Tom Wu. "Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites." Physical Chemistry Chemical Physics 20, no. 37 (2018): 23837–46. http://dx.doi.org/10.1039/c8cp03945c.
Full textChen, Yu-Li, Mon-Shu Ho, Wen-Jay Lee, Pei-Fang Chung, Babu Balraj, and Chandrasekar Sivakumar. "The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)." Nanotechnology 31, no. 14 (January 16, 2020): 145709. http://dx.doi.org/10.1088/1361-6528/ab62ca.
Full textLee, Hong Sub, Kyung Mun Kang, Woo Je Han, Tae Won Lee, Chang Sun Park, Yong June Choi, and Hyung Ho Park. "A Study on the Resistive Switching of La0.7Sr0.3MnO3 Film Using Spectromicroscopy." Applied Mechanics and Materials 597 (July 2014): 184–87. http://dx.doi.org/10.4028/www.scientific.net/amm.597.184.
Full textMoriyama, Takumi, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita. "Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results." MRS Advances 1, no. 49 (2016): 3367–72. http://dx.doi.org/10.1557/adv.2016.461.
Full textNakamura, Hisao, and Yoshihiro Asai. "Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models." Physical Chemistry Chemical Physics 18, no. 13 (2016): 8820–26. http://dx.doi.org/10.1039/c6cp00916f.
Full textLodhi, Anil, Shalu Saini, Anurag Dwivedi, Arpit Khandelwal, and Shree Prakash Tiwari. "Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM." Journal of Micromechanics and Microengineering 32, no. 4 (February 21, 2022): 044001. http://dx.doi.org/10.1088/1361-6439/ac521f.
Full textКрасников, Г. Я., О. М. Орлов, and В. В. Макеев. "ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"." Электронная техника. Серия 3. Микроэлектроника, no. 1 (2020): 42–46. http://dx.doi.org/10.7868/s2410993220010054.
Full textMin, Shin-Yi, and Won-Ju Cho. "Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation." Journal of Nanoscience and Nanotechnology 20, no. 8 (August 1, 2020): 4740–45. http://dx.doi.org/10.1166/jnn.2020.17805.
Full textDissertations / Theses on the topic "Resistive random-access memory, ReRAM"
Li, Yanlong. "The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/97191.
Full textM.S.
Although the scaling of conventional memories such as volatile dynamic random access memory (DRAM) and non-volatile flash technology is becoming increasingly difficult, new types of non-volatile memories, such as resistive switching memories, have recently attracted the attention of both industry and academia. Resistive switching memory is considered as the next generation non-volatile memory because of its excellent scalability, high switching speed, simple structure and low power consumption. What’s more, ReRAM is also a promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. ReRAM shows unique nanoionics based filamentary switching mechanism. Besides the nonvolatile memory applications, resistive switching devices implement the formation of a memristor, which is the fourth basic electrical component and can be used for neuromorphic computing. First, we report the device property of Co based resistive switching devices with a structure of Cu/TaOX/Co layers. The I-V characteristics of the manufactured Cu/TaOX/Co devices shows very similar FORM, SET and RESET voltages for Cu conductive filaments compared with Pt device. However, the Co device has a significant smaller FORM, SET and RESET voltages for oxygen vacancy (VO) filaments, which can be partly attributed to the work function difference between Pt and Co of 13.5 eV and partly to the impaired integrity properties of Co vs Pt inert electrode. The main reason for the limit of SET-RESET operations is that high Joules heat dissipation. With high Joules heat accumulation, the maximum switching cycles of Co devices is up to 8 times, while in the case of Pt cases, it is almost unlimited. Secondly, we fabricated an organic ReRAM device with the structure Cu-doped PANI-CSA/O-AA/Al. Cu-doped PANI-CSA polymer electrode has been introduced for the first time as the top polymer electrode of a ReRAM device. Compared to inorganic ReRAM device, this polymer device can be operated at a significantly lower forming voltage than inorganic devices such as Cu/TaOX/Pt. We have demonstrated that our organic ReRAM is a promising candidate for environmentally friendly and flexible memory devices. Our results demonstrate the FORM operation of the polymer devices depend on the concentration of Cu+ ions as well as the thickness of the polymer top layer.
Schultz, Thomas. "ReRAM based platform for monitoring IC integrity and aging." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573576246158436.
Full textJovanovic, Natalija. "Bascules et registres non-volatiles à base de ReRAM en technologies CMOS avancées." Electronic Thesis or Diss., Paris, ENST, 2016. http://www.theses.fr/2016ENST0023.
Full textNon-volatile memories and flip-flops can improve the energy efficiency in battery-operated devices by eliminating the sleep-mode consumption, while maintaining the system state. Among emerging embedded NVM technologies, ReRAMs differentiate itself with a fast programming time, a simple CMOS-compatible structure and a good scalability. Previously proposed ReRAM-based non-volatile flip-flops (NVFF) have been implemented in 90nm or older CMOS nodes and suffer from CMOS reliability issues in scaled nodes due to high programming and forming voltages. This thesis makes the analysis of robust and reliable non-volatile design in 28nm CMOS node and below. It presents two novel thin-gate oxide CMOS design solutions for the programming of ReRAM devices. The programming circuits are applied in dual-voltage NVFF architecture which employs two ReRAM devices (2R). Alternative 1R NVFF architecture is also proposed in order to achieve higher density and lower consumption. With regard to the existing ReRAM technologies, given NVFF solutions are optimized for ReRAM programming conditions which improve endurance and minimize programming power. Statistical analysis of the FF core and its optimization was performed, to evaluate the best restore operation architectures which meet digital CMOS circuit design yield requirements. The NVFFs are implemented in 28nm CMOS FDSOI and benchmarked against a master slave flip-flop from a standard library and a data-retention flip-flop. Finally, to minimize the NVFF area overhead without impacting the robustness of \nv{} operations, multi-port non-volatile register file (NVRF) based on the 1R NVFF solution is proposed
Tan, Scott H. (Scott Howard). "Neuromorphic computing systems : crystalline resistive random access memory." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/127915.
Full textCataloged from the official PDF of thesis.
Includes bibliographical references (pages 129-142).
Neuromorphic computing is a promising approach for efficient electronics by shaping computer hardware like the human brain. At the core of neuromorphic architectures are artificial synapses, which store conductance states to weight collections of electrical spikes according to Kirchoff's laws and Ohm's law. This thesis presents Silicon (Si)-based crystalline resistive random-access memory (crystalline RRAM) artificial synapses for neuromorphic computing. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. To the best of the author's knowledge, crystalline RRAM reported in this thesis have the lowest switching variations compared to other RRAM types. Controlling metal movement in resistive switching materials is extremely challenging. This thesis demonstrates two strategies to improve nanoscale control in crystalline RRAM: 1) intrinsic semiconductor regulation and 2) active metal alloying.
The first strategy relies on using defects to regulate resistive switching. Epitaxially-grown Silicon-Germanium (SiGe) on Si permits resistive switching via dislocations. Defect-selective chemical etching can increase ON/OFF ratio while maintaining low variations. The second approach to improve crystalline RRAM is active metal alloying. Pure silver (Ag) exhibits high mobility in Si due to thermodynamic repulsion between Ag and Si. Thermodynamic instability of Ag in Si induces poor weight stability, especially in low conductance states. This thesis demonstrates that adding a small amount of copper (Cu) to pure Ag can enhance weight stability because Cu can act as a bridge between Ag and Si to alleviate thermodynamic repulsion. Convolutional filtering and weight storage with 32 x 32 crystalline RRAM crossbar arrays are experimentally demonstrated using this approach. While these results are extremely promising, 2D crossbar scaling is limited by sneak currents.
Stacking artificial synapses in 3D could maximize scaling potential. However, 3D crystalline RRAM cannot be fabricated with single-crystalline materials that require high growth temperatures. Poly-crystalline Si could form 3D crystalline RRAM, however, resistive switching performance is inferior to single-crystalline RRAM, possibly due to free bonds. This thesis demonstrates hydrogen passivation can fix this problem. Hydrogenated doped poly-crystalline/micro-crystalline Si are presented as suitable materials for 3D neuromorphic computing cores. To conclude this thesis, monolithic character classifiers with micro-crystalline imaging and computing units are designed.
by Scott H. Tan.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Mechanical Engineering
Chowdhury, Madhumita. "NiOx Based Resistive Random Access Memories." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812.
Full textLong, Branden Michael. "Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1365166054.
Full textParks, Jared D. "Hardware Authentication Enhancement of Resistive Random Access Memory Physical Unclonable Functions." Thesis, Northern Arizona University, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10253956.
Full textAdvancements in microprocessors and sensor technologies have led to many innovations in the Internet of Things (IoT). These developments have both improved the quality of life for individuals and led to a need for securing users' information. This is especially true in devices such as pacemakers, cars, and credit cards, which can provide information that can harm users. To protect users from hackers who want this information, Physical Unclonable Functions (PUFs) can be used. Memory-based PUF are especially useful, as they can be readily implemented on most systems without much effort or additional hardware. This device is also unique in that it is very difficult to clone and hackers will have a hard time reading the contents of the device. Resistive Random Access Memory (ReRAM) PUFs in particular provide a similar manufacturing process to current Flash technologies, making them easily integrated into current technologies. On top of being similar to manufacture, ReRAM devices are also lower power than flash, allowing them to be used in low power devices such as Radio Frequency Identification Tags. While this is an advantage, ReRAM devices are currently limited in use since they vary greatly in different operating conditions. In this paper, a statistical model is proposed to account for shifts that occur at different temperatures. To generate the model, a mean square error linear regression analysis was performed, and found that these devices can be loosely represented as mean shifted Gaussian distributions at different temperatures. This model allows for a better understanding of how the system will perform during the challenge response pair authentication process. It was also found that the error rate can be reduced to near zero using this method, but may need improvement due to the limitations of this data-set. These limitations can be seen with the bit error rate, however these were improved using multi-state soft decoding. This process compared a ternary and eight state grouping, which allows for a better understanding of how each cell affects the array. Along with the statistical model the system will have minimal burden on the servers during the challenge response process, as it is computationally simple. Future works will include an implementation of this system to further allow ReRAM to become a more powerful technology, and help innovate the IoT.
Valverde, Lucas. "Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory »." Mémoire, Université de Sherbrooke, 2014. http://hdl.handle.net/11143/6041.
Full textKuan-LunFu and 傅冠倫. "Investigating the Plausibility of Integrating the Resistive Random-Access Memory (ReRAM) with Vertically-Coupled Microdisk Resonator (VCMR)." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/xu7ppb.
Full textYou-KuiHu and 胡宥奎. "Impact of Ultraviolet Light Radiation on the Switching Characteristics of Resistive Random-Access Memory (ReRAM) Devices of Different Dimensions." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/z7d3x8.
Full text國立成功大學
微電子工程研究所
107
Resistive switching memory is a system in which the resistance of a material can be modulated between two nonvolatile states by applying an electrical pulse, which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile memory feature. These devices are some of the most promising candidates for the next generation of non-volatile computer memories, while other plausible applications have also been sought such as bio-inspired neuromorphic systems. There have been a handful of studies on light controllable resistance switching, which concludes that optical illumination can improve switching properties or be an enabler for resistance switching. In these studies, the ultraviolet (UV) irradiation was used to control the resistance by modulating the current. Among the materials considered, nickel oxide (NiO) potentially have a broad perspective in optical applications due to their relatively wide bandgap, high mobility, high transparency, remarkably good electrical and optical characteristics. Indium tin oxide (ITO) has well light transmittance and low resistance, which is suitable for illumination. In order to operate ReRAM in UV spectroscopic regime, the top and bottom electrode materials are made of ITO conductive film in order to facilitate the transmission of the UV irradiation. The spectral transparency of electrodes and reliable device performance are keys to ensuring its continual applicability. It is foreseeable in the future that unique applicability of ReRAM in UV will make its headway as a key component in many optoelectronic displaying products. The present research focuses on using Radio Frequency Magnetron Sputtering and sol-gel processing method to prepare NiO active layers. Then, the DC Magnetron Sputtering method is also adopted to deposit indium tin oxide (ITO) top electrode for the realization of the semi-transparent ReRAM devices and their current-voltage characteristics are subsequently evaluated. Specifically, a series of reliability tests have shown that the fabricated memories have endured up to 100 switching cycles. Here, the samples of the largest dimensions prepared by the Magnetron Sputtering method show that the current contrast ratio between high (HRS) and low (LRS) resistance state at 0.1V has achieved more than three orders of magnitude. Furthermore, the retention time measurement has also demonstrated that the memory storage capability of these ReRAMs remain in excellent operating condition after surviving more than 10,000 seconds of the test while the smallest size devices have yielded a substantially less data retention capability. In comparison, the typical memory state of the ReRAM fabricated by sol-gel processing method could not sustain more than 8,000 seconds. Finally, the extent of UV irradiation impact on ReRAM is then investigated. Major attention are concentrated in finding out a correlation between the UV responsivity and switching characteristics for NiO ReRAMs under study at low bias voltage. We found that the memory states associated with the ReRAM of the smallest feature sizes could be toggled relatively easy by UV irradiation at the smallest size.
Books on the topic "Resistive random-access memory, ReRAM"
Yu, Shimeng. Resistive Random Access Memory (RRAM). Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8.
Full textBook chapters on the topic "Resistive random-access memory, ReRAM"
Yu, Shimeng. "RRAM Characterization and Modeling." In Resistive Random Access Memory (RRAM), 21–34. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_3.
Full textYu, Shimeng. "Introduction to RRAM Technology." In Resistive Random Access Memory (RRAM), 1–7. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_1.
Full textYu, Shimeng. "RRAM Array Architecture." In Resistive Random Access Memory (RRAM), 35–54. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_4.
Full textYu, Shimeng. "RRAM Device Fabrication and Performances." In Resistive Random Access Memory (RRAM), 9–19. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02030-8_2.
Full textPuglisi, F. M. "Noise in Resistive Random Access Memory Devices." In Noise in Nanoscale Semiconductor Devices, 87–133. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37500-3_3.
Full textZhuo, Victor Yiqian, Zhixian Chen, and King Jien Chui. "Resistive Random Access Memory Device Physics and Array Architectures." In Emerging Non-volatile Memory Technologies, 319–43. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-6912-8_10.
Full textGilmer, David C., and Gennadi Bersuker. "Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)." In Nanostructure Science and Technology, 71–92. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-91896-9_3.
Full textSribhuvaneshwari, H., and K. Suthendran. "A Novel March C2RR Algorithm for Nanoelectronic Resistive Random Access Memory (RRAM) Testing." In Communications in Computer and Information Science, 578–89. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-5950-7_48.
Full textNagata, Takahiro. "Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure." In NIMS Monographs, 41–67. Tokyo: Springer Japan, 2020. http://dx.doi.org/10.1007/978-4-431-54850-8_4.
Full textTak, Sheetal, and Madan Mali. "Efficient Resistive Defect Detection Technique for Performance Enhancement of Static Random Access Memory." In Lecture Notes in Electrical Engineering, 815–22. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-3690-5_75.
Full textConference papers on the topic "Resistive random-access memory, ReRAM"
Kinoshita, K., R. Koishi, T. Moriyama, K. Kawano, H. Miyashita, S. S. Lee, and S. Kishida. "Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory (ReRAM)." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.o-3-4.
Full textStellari, Franco, Ernest Y. Wu, Takashi Ando, Martin M. Frank, and Peilin Song. "Photon Emission Microscopy of HfO2 ReRAM Cells." In ISTFA 2021. ASM International, 2021. http://dx.doi.org/10.31399/asm.cp.istfa2021p0115.
Full textChuang, Ricky W., Kuan-Lun Fu, and Zhe-Ya Zheng. "The integrated vertically coupled resistive random-access memory (ReRAM)-based microdisk resonator and the relevant performance evaluation." In Integrated Optics: Devices, Materials, and Technologies XXIV, edited by Sonia M. García-Blanco and Pavel Cheben. SPIE, 2020. http://dx.doi.org/10.1117/12.2545479.
Full textChuang, Ricky W., Ming-Cheng Huang, You-Kui Hu, and Zhe-Ya Zheng. "The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices." In Integrated Optics: Devices, Materials, and Technologies XXIV, edited by Sonia M. García-Blanco and Pavel Cheben. SPIE, 2020. http://dx.doi.org/10.1117/12.2545485.
Full textChuang, Ricky W., Zhe-Ya Zheng, Cheng-Liang Huang, and Bo-Liang Liu. "Vertically-waveguide-coupled BaTiO3-based microdisk optical resonator equipped with the functionality of resistive random-access memory (ReRAM)." In Integrated Optics: Devices, Materials, and Technologies XXV, edited by Sonia M. García-Blanco and Pavel Cheben. SPIE, 2021. http://dx.doi.org/10.1117/12.2579129.
Full textShima, Hisashi, and Hiro Akinaga. "In-situ nanoscale characterization of annealing effect on TiN/Ti/HfOx/TiN Structure for Resistive Random Access Memory (ReRAM)." In 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2012. http://dx.doi.org/10.1109/nano.2012.6322064.
Full textShiraishi, K., M. Y. Yang, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, et al. "Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.a-7-1.
Full textYu-Tao Li, Hai-Ming Zhao, He Tian, Xue-Feng Wang, Wen-Tian Mi, Yi Yang, and Tian-Ling Ren. "Novel graphene-based resistive random access memory." In 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2016. http://dx.doi.org/10.1109/icsict.2016.7998952.
Full textSong, Guanghui, Kui Cai, Xingwei Zhong, Jiang Yu, and Jun Cheng. "Coding for Resistive Random-Access Memory Channels." In GLOBECOM 2020 - 2020 IEEE Global Communications Conference. IEEE, 2020. http://dx.doi.org/10.1109/globecom42002.2020.9322291.
Full textWu, Wenjuan, Xin Tong, Rong Zhao, Luping Shi, Hongxin Yang, and Yee-Chia Yeo. "Novel bipolar TaOx-based Resistive Random Access Memory." In 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS). IEEE, 2011. http://dx.doi.org/10.1109/nvmts.2011.6137095.
Full textReports on the topic "Resistive random-access memory, ReRAM"
Chin, Matthew L., Matin Amani, Terrence P. O'Regan, A. G. Birdwell, and Madan Dubey. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. Fort Belvoir, VA: Defense Technical Information Center, August 2015. http://dx.doi.org/10.21236/ada623815.
Full text