Relevant bibliographies by topics / Reliability characterization

Academic literature on the topic 'Reliability characterization'

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Published: 14 March 2023

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Journal articles on the topic "Reliability characterization"

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Amirabdollahian, Mahsa, and Bithin Datta. "Reliability Evaluation of Groundwater Contamination Source Characterization under Uncertain Flow Field." International Journal of Environmental Science and Development 6, no. 7 (2015): 512–18. http://dx.doi.org/10.7763/ijesd.2015.v6.647.

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Tsuchiya, Toshiyuki. "Reliability Characterization of MEMS Materials." IEEJ Transactions on Sensors and Micromachines 125, no. 7 (2005): 289–93. http://dx.doi.org/10.1541/ieejsmas.125.289.

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Song, William, Saibal Mukhopadhyay, and Sudhakar Yalamanchili. "Architectural Reliability: Lifetime Reliability Characterization and Management ofMany-Core Processors." IEEE Computer Architecture Letters 14, no. 2 (July 1, 2015): 103–6. http://dx.doi.org/10.1109/lca.2014.2340873.

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Yang, Q. J., H. L. J. Pang, Z. P. Wang, G. H. Lim, F. F. Yap, and R. M. Lin. "Vibration reliability characterization of PBGA assemblies." Microelectronics Reliability 40, no. 7 (July 2000): 1097–107. http://dx.doi.org/10.1016/s0026-2714(00)00036-6.

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Ekwueme, Chukwuma G., and Gary C. Hart. "Structural reliability characterization of precast concrete." Structural Design of Tall Buildings 3, no. 1 (March 1994): 13–35. http://dx.doi.org/10.1002/tal.4320030103.

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Lee, J. C., Chen Ih-Chin, and Hu Chenming. "Modeling and characterization of gate oxide reliability." IEEE Transactions on Electron Devices 35, no. 12 (1988): 2268–78. http://dx.doi.org/10.1109/16.8802.

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Cheng, Bowen, Dirk De Bruyker, Chris Chua, Kunal Sahasrabuddhe, Ivan Shubin, John E. Cunningham, Ying Luo, Karl F. Bohringer, Ashok V. Krishnamoorthy, and Eugene M. Chow. "Microspring Characterization and Flip-Chip Assembly Reliability." IEEE Transactions on Components, Packaging and Manufacturing Technology 3, no. 2 (February 2013): 187–96. http://dx.doi.org/10.1109/tcpmt.2012.2213250.

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Claeys, C., E. Simoen, J. M. Rafi, Marcelo A. Pavanello, and Joao A. Martino. "Physical Characterization and Reliability Aspects of MuGFETs." ECS Transactions 9, no. 1 (December 19, 2019): 281–94. http://dx.doi.org/10.1149/1.2766899.

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Sheikh, A. "A reliability model for fatigue life characterization." International Journal of Fatigue 17, no. 2 (February 1995): 121–28. http://dx.doi.org/10.1016/0142-1123(95)95891-j.

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Shaddock, David, and Liang Yin. "Reliability of High Temperature Laminates." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000100–000110. http://dx.doi.org/10.4071/hiten-session3b-paper3b_1.

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Printed circuit boards have been reported to have limited lifetime at 200 to 250°C. Characterization of high temperature laminates for application at 200 to 250°C was conducted to better quantify their lifetime using accelerated testing of key functional parameters. Eight high temperature laminates consisting of 3 material types was evaluated. Life testing was applied for via cyclic life, weight loss, peel strength, and surface insulation resistance. Via lifetime was characterization using Interconnect Stress Test (IST) coupons. Weight loss was measured at intervals during the life of the tests. Peel strength was tested using IPC IPC-TM-650 method 2.4.8c. Weight loss was characterized using isothermal aging. Comparison of lifetime is made between the laminate samples. The non-polyimide laminates exhibited the longer life times than polyimide laminates in most tests except peel strength. Peel strength is the life limiting parameter for the laminates. Parylene HT was found to improve stability in peel strength and weight loss of one PTFE laminate tested.
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Dissertations / Theses on the topic "Reliability characterization"

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Nam, David. "Characterization, Reliability and Packaging for 300 °C MOSFET." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/104896.

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Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating to the gate oxide region of the MOSFET, which is exacerbated through high temperature conditions. In this thesis, high temperature effects on current-generation SiC MOSFETs are studied and analyzed. To achieve this, a high temperature package is created to achieve reliable operation of a SiC MOSFET at junction temperatures of 300 °C. The custom, high temperature package feasibility is verified through studying trends in SiC MOSFET behavior with increasing temperature up to 300 °C by static characterization. Additionally, the reliability of SiC MOSFETs at 300 °C is tested with accelerated lifetime bias tests.
M.S.
Electrical devices that are rated for high temperature applications demand a use of a material that is stable and reliable at the elevated temperatures. Silicon carbide (SiC) is such a material. Devices made from SiC are able to switch faster, have a superior efficiency, and are capable of operating at extreme temperatures much better than the currently widely used silicon (Si) devices. There are limitations on SiC certain structures of SiC devices, such as the metal oxide semiconductor field effect transistor (MOSFET), have inherent reliability issues related to the fabrication of the device. These reliability issues can get worse over higher temperature ranges. Therefore, studies must be made to determine the feasibility of SiC MOSFETs in high temperature applications. To do so, industry standard tests are conducted on newer generation SiC MOSFETs to ascertain their use for said conditions.
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Ali, Richard A. "Reliability and characterization of high voltage power capacitors." Thesis, Monterey, California: Naval Postgraduate School, 2014. http://hdl.handle.net/10945/41346.

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Approved for public release; distribution is unlimited.
Alternative energy products are an increasingly common sight on military bases in the United States. Energy product reliability affects the sustainability and cost-effectiveness of these systems, which must be tested by outside entities to ensure quality. The purpose of this thesis is to perform component level reliability testing on a high voltage power capacitor used in an electrical vehicle solar charging system. A component level characterization was performed to better understand the physical attributes of these capacitors. This investigation identified the expected component lifetime and conditions in which this component will become less reliable. Results are compared to those published by the manufacturer.
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Tallarico, Andrea Natale <1988&gt. "Characterization and Modeling of Semiconductor Power Devices Reliability." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amsdottorato.unibo.it/7990/1/Tallarico_PhD_Thesis.pdf.

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This thesis aims at studying, characterizing and modeling the trapping and de-trapping mechanisms occurring during the ON-state operation mode and leading to the degradation of semiconductor power devices. In this operating condition, the combined effect of moderate electric fields, high currents and temperatures due to self-heating effects can seriously affect the long-term reliability leading to device failure. Detailed analyses are performed on both silicon and gallium nitride based technologies by means of accelerated life test methods and electro-thermal simulations, aimed at understanding the physical origins of the degradation. In particular, this thesis provides the following contributions: i) the role of the interface and oxide trapped charge induced by negative bias temperature instability (NBTI) stress in p-channel Si-based U-MOSFETs is investigated. The impact of relevant electrical and physical parameters, such as stress voltage, recovery voltage and temperature, is accounted for and proper models are also proposed. In the field of innovative semiconductor power devices, this work focuses on the study of GaN-based devices. In particular, three different subtopics are considered: ii) a thermal model, accounting for the temperature dependence of the thermal boundary resistance (TBR), is implemented in TCAD simulator in order to realistically model self-heating effects in GaN-based power devices; iii) the degradation mechanisms induced by ON-state stress in GaN-based Schottky barrier diodes (SBDs) are proposed by analyzing their dependence on the device geometry; iv) the trapping mechanisms underlying the time-dependent gate breakdown and their effects on the performance of GaN-based power HEMTs with p-type gate are investigated, and an original empirical model representing the relationship between gate leakage current and time to failure is proposed.
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Xiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.

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The increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.

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Zheng, Hanguang. "Die-Attachment on Copper by Nanosilver Sintering: Processing, Characterization and Reliability." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/73312.

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Die-attachment, as the first level of electronics packaging, plays a key role for the overall performance of the power electronics packages. Nanosilver sintering has becoming an emerging solder-free, environmental friendly die-attach technology. Researchers have demonstrated the feasibility of die-attachment on silver (Ag) or gold (Au) surfaces by pressure-less or low-pressure (< 5 MPa) nanosilver sintering. This study extended the application of nanosilver sintering die-attach technique to copper (Cu) surface. The main challenge of nanosilver sintering on Cu is the formation of thick Cu oxide during processing, which may lead to weak joints. In this study, different processes were developed based on the die size: for small-area dice (< 5 * 5 mm2), different sintering atmospheres (e.g. forming gas) were applied to protect Cu surface from oxidation; for large-area dice (> 5 * 5 mm2), a double-print, low-pressure (< 5 MPa) assisted sintering process was developed. For both processes, die-shear tests demonstrated die-shear strength can reach 40 MPa. The effects of different sintering parameters of the processing were analyzed by different material characterization techniques. With forming gas as sintering atmosphere, not only Cu surface was protected from oxidation, but also the organics in the paste were degraded with nanosilver particles as catalyst. External pressure applied in the processing not only increased the density of sintered Ag, but also enhanced the contact area of sintered-Ag/Cu interface. Microstructure of Ag/Cu interface were characterized by transmission electron microscopy (TEM). Characterization results indicate that Ag/Cu metallic bonds formed at the interface, which verified the high die-shear strength of the die-attachment. Thermal performance of nanosilver sintered die-attachment on Cu was evaluated. A system was designed and constructed for measuring both transient thermal impedance (Zth) and steady-state thermal resistance (Rth) of insulated gate bipolar transistor (IGBT) packages. The coefficient of variation (CV) of Zth measurement by the system was lower than 0.5%. Lead-free solder (SAC305) was applied in comparison of thermal performance with nanosilver paste. With same sample geometry and heating power level, nanosilver sintered joints on Cu showed in average 12.6% lower Zth and 20.1% lower Rth than SAC305 soldered joints. Great thermal performances of nanosilver sintering die-attachment on Cu were mainly due to the low thermal resistivity of sintered-Ag and the good bonding quality. Both passive temperature cycling and active power cycling tests were conducted to evaluate the reliability of nanosilver sintered joints on Cu. For passive temperature cycling tests (-40 - 125 C), the die-shear strengths of mechanical samples had no significant drop over 1000 cycles, and nanosilver sintered IGBT on Cu packages showed almost no change on Zth after 800 cycles. For active power cycling test (Tj = 45 - 175 C), nanosilver sintered IGBT on Cu assembly had a lifetime over 48,000 cycles. The failure point of the assembly was the detachment of the wirebonds. Great reliability performances of nanosilver sintered die-attachment on Cu were mainly due to the low mismatch of coefficient of thermal expansion (CTE) between sintered-Ag and Cu. Meanwhile, low inter-diffusion rate between Ag and Cu prevented the interface from the reliability issue related to Kirkendall voids, which often took place in tin (Sn) -based solder joints.
Ph. D.
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Luo, Wen. "Reliability characterization and prediction of high k dielectric thin film." Texas A&M University, 2004. http://hdl.handle.net/1969.1/3225.

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As technologies continue advancing, semiconductor devices with dimensions in nanometers have entered all spheres of human life. This research deals with both the statistical aspect of reliability and some electrical aspect of reliability characterization. As an example of nano devices, TaOx-based high k dielectric thin films are studied on the failure mode identification, accelerated life testing, lifetime projection, and failure rate estimation. Experiment and analysis on dielectric relaxation and transient current show that the relaxation current of high k dielectrics is distinctive to the trapping/detrapping current of SiO2; high k films have a lower leakage current but a higher relaxation current than SiO2. Based on the connection between polarization-relaxation and film integrity demonstrated in ramped voltage stress tests, a new method of breakdown detection is proposed. It monitors relaxation during the test, and uses the disappearing of relaxation current as the signal of a breakdown event. This research develops a Bayesian approach which is suitable to reliability estimation and prediction of current and future generations of nano devices. It combines the Weibull lifetime distribution with the empirical acceleration relationship, and put the model parameters into a hierarchical Bayesian structure. The value of the Bayesian approach lies in that it can fully utilize available information in modeling uncertainty and provide cogent prediction with limited resources in a reasonable period of time. Markov chain Monte Carlo simulation is used for posterior inference of the reliability projection and for sensitivity analysis over a variety of vague priors. Time-to-breakdown data collected in the accelerated life tests also are modeled with a bathtub failure rate curve. The decreasing failure rate is estimated with a non-parametric Bayesian approach, and the constant failure rate is estimated with a regular parametric Bayesian approach. This method can provide a fast and reliable estimation of failure rate for burn-in optimization when only a small sample of data is available.
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ZAMBELLI, Cristian. "ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES." Doctoral thesis, Università degli studi di Ferrara, 2012. http://hdl.handle.net/11392/2389431.

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Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned about the electrical characterization, physics, modeling and reliability of innovative non-volatile memories, addressing most of the proposed alternative to the floating-gate based memories which currently are facing a technology dead end. Throughout the chapters of this thesis it will be provided a detailed characterization of the envisioned replacements for the common NOR and NAND Flash technologies into the near future embedded and MPSoCs (Multi Processing System on Chip) systems. In Chapter 1 it will be introduced the non-volatile memory technology with direct reference on nowadays Flash mainstream, providing indications and comments on why the system designers should be forced to change the approach to new memory concepts. In Chapter 2 it will be presented one of the most studied post-floating gate memory technology for MPSoCs: the Phase Change Memory. The results of an extensive electrical characterization performed on these devices led to important discoveries such as the kinematics of the erase operation and potential reliability threats in memory operations. A modeling framework has been developed to support the experimental results and to validate them on projected scaled technology. In Chapter 3 an embedded memory for automotive environment will be shown: the SimpleEE p-channel memory. The characterization of this memory proven the technology robustness providing at the same time new insights on the erratic bits phenomenon largely studied on NOR and NAND counterparts. Chapter 4 will show the research studies performed on a memory device based on the Nano-MEMS concept. This particular memory generation proves to be integrated in very harsh environment such as military applications, geothermal and space avionics. A detailed study on the physical principles underlying this memory will be presented. In Chapter 5 a successor of the standard NAND Flash will be analyzed: the Charge Trapping NAND. This kind of memory shares the same principles of the traditional floating gate technology except for the storage medium which now has been substituted by a discrete nature storage (i.e. silicon nitride traps). The conclusions and the results summary for each memory technology will be provided in Chapter 6. Finally, on Appendix A it will be shown the results of a recently started research activity on the high level reliability memory management exploiting the results of the studies for Phase Change Memories.
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Rieske, Ralf. "Characterization of attenuation and reliability of PCB integrated optical waveguides." Templin Detert, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=3017300&prov=M&dok_var=1&dok_ext=htm.

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Le, Huy X. P. "Characterization of hot-carrier reliability in analog sub-circuit design." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41379.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
Includes bibliographical references (leaves 52-54).
by Huy X.P. Le.
M.Eng.
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Engelbert, Carl Robert. "Statistical characterization of graphite fiber for prediction of composite structure reliability." Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA238020.

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Thesis (M.S. in Aeronautical Engineering)--Naval Postgraduate School, June 1990.
Thesis Advisor(s): Wu, Edward M. "June 1990." Description based on signature page as viewed on October 21, 2009. DTIC Identifier(s): Graphite fiber strength testing, graphite fiber statistical evaluation. Author(s) subject terms: Graphite fiber strength testing, graphite fiber statistical evaluation, composite reliability predictions. Includes bibliographical references (p. 78-79). Also available in print.
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Books on the topic "Reliability characterization"

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McCauley, James W., and Volker Weiss, eds. Materials Characterization for Systems Performance and Reliability. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4.

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Material Characterization for Systems Performance and Reliability (Conference) (1984 Lake Luzerne, N.Y.). Materials characterization for systems performance and reliability. New York: Plenum, 1986.

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Sagamore Army Materials Research Conference (31st 1984 Lake Luzerne, N.Y.). Materials characterization for systems performance and reliability. New York: Plenum Press, 1986.

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McCauley, James W. Materials Characterization for Systems Performance and Reliability. Boston, MA: Springer US, 1986.

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Rajeshuni, Ramesham, Society of Photo-optical Instrumentation Engineers., and Semiconductor Equipment and Materials International., eds. Reliability, testing, and characterization of MEMS/MOEMS: 22-24 October 2001, San Francisco, USA. Bellingham, Wash: SPIE, 2001.

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D, Todd M., U.S. Nuclear Regulatory Commission. Office of Nuclear Regulatory Research. Division of Engineering., and Oak Ridge National Laboratory, eds. A characterization of check valve degradation and failure experience in the nuclear power industry. Washington, DC: Division of Engineering, Office of Nuclear Regulatory Research, U.S. Nuclear Regulatory Commission, 1993.

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L, Veteran Janice, ed. Silicon materials--processing, characterization and reliability: Symposium held April 1-5, 2002, San Francisco, California, U.S.A. Warrendale, PA: Materials Research Society, 2002.

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1952-, Tanner Danelle Mary, Ramesham Rajeshuni, and Society of Photo-optical Instrumentation Engineers., eds. Reliability, testing, and characterization of MEMS/MOEMS III: 26-28 January, 2004, San Jose, California, USA. Bellingham, Wash: SPIE, 2004.

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Hartzell, Allyson L. Reliability, packaging, testing, and characterization of MEMS/MOEMS VII: 21-22 January 2008, San Jose, California, USA. Bellingham, Wash: SPIE, 2008.

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1952-, Tanner Danelle Mary, Ramesham Rajeshuni, Society of Photo-optical Instrumentation Engineers., Semiconductor Equipment and Materials International., Solid State Technology (Organization), and Sandia National Laboratories, eds. Reliability, packaging, testing, and characterization of MEMS/MOEMS IV: 24-25 January 2005, San Jose, California, USA. Bellingham, Wash: SPIE, 2005.

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Book chapters on the topic "Reliability characterization"

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Varde, Prabhakar V., and Michael G. Pecht. "Risk Characterization." In Springer Series in Reliability Engineering, 15–29. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0090-5_2.

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Klebanov, Lev, and Gabor Szekely. "Characterization of Distributions in Reliability." In Recent Advances in Reliability Theory, 105–15. Boston, MA: Birkhäuser Boston, 2000. http://dx.doi.org/10.1007/978-1-4612-1384-0_7.

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Green, Robert E. "Nondestructive Materials Characterization." In Materials Characterization for Systems Performance and Reliability, 31–58. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_3.

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Soares, J. C. "Nuclear Methods in the Characterization of Semiconductor Reliability." In Semiconductor Device Reliability, 291–300. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_15.

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Romero, Paulo, and Martins Maciel. "Workload Characterization." In Performance, Reliability, and Availability Evaluation of Computational Systems, Volume 2, 445–526. Boca Raton: Chapman and Hall/CRC, 2023. http://dx.doi.org/10.1201/9781003306030-12.

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Lau, John H., and Ning-Cheng Lee. "Solder Joint Characterization." In Assembly and Reliability of Lead-Free Solder Joints, 299–354. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3920-6_5.

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Sato, Takashi, and Hiromitsu Awano. "On-Chip Characterization of Statistical Device Degradation." In Circuit Design for Reliability, 69–92. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-4078-9_5.

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Wachtman, John B. "Materials Characterization at a University." In Materials Characterization for Systems Performance and Reliability, 475–78. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_26.

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Smyth, D. M. "Compositional Characterization Of Dielectric Oxides." In Materials Characterization for Systems Performance and Reliability, 59–68. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_4.

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Hagnauer, Gary L. "Polymers and Polymer Precursor Characterization." In Materials Characterization for Systems Performance and Reliability, 189–243. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2119-4_9.

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Conference papers on the topic "Reliability characterization"

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Suehle, J. S. "Reliability characterization of ultra-thin film dielectrics." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56786.

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Weide-Zaage, Kirsten, Yuqi Tan, and Verena Hein. "Thick AlCu-metal reliability characterization." In 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2018. http://dx.doi.org/10.1109/eurosime.2018.8369904.

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Hartzell, Allyson L., and David J. Woodilla. "MEMS reliability, characterization, and test." In Micromachining and Microfabrication, edited by Rajeshuni Ramesham. SPIE, 2001. http://dx.doi.org/10.1117/12.442987.

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"Poster session: Reliability and characterization." In 2014 IEEE 29th International Conference on Microelectronics (MIEL). IEEE, 2014. http://dx.doi.org/10.1109/miel.2014.6842153.

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Wategaonkar, Dhanashri N., and Vivek S. Deshpande. "Characterization of reliability in WSN." In 2012 World Congress on Information and Communication Technologies (WICT). IEEE, 2012. http://dx.doi.org/10.1109/wict.2012.6409215.

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Reczek, W., F. Bonner, and B. Murphy. "Reliability of latchup characterization procedures." In International Conference on Microelectronic Test Structures. IEEE, 1990. http://dx.doi.org/10.1109/icmts.1990.67879.

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Gossner, Harald, and Alessandro Paccagnella. "Session 14: Characterization, reliability, and yield - ESD/memory reliability." In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796687.

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Demertzi, Melina, Bardia Zandian, Ricardo Rojas, and Murali Annavaram. "Benchmarking ISA reliability to intermittent errors." In 2012 IEEE International Symposium on Workload Characterization (IISWC). IEEE, 2012. http://dx.doi.org/10.1109/iiswc.2012.6402906.

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Keller, R. R., M. C. Strus, A. N. Chiaramonti, Y. L. Kim, Y. J. Jung, D. T. Read, David G. Seiler, et al. "Reliability Testing of Advanced Interconnect Materials." In FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011. AIP, 2011. http://dx.doi.org/10.1063/1.3657900.

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Liu, Ji, and Huiyang Zhou. "Reliability Modeling of NISQ- Era Quantum Computers." In 2020 IEEE International Symposium on Workload Characterization (IISWC). IEEE, 2020. http://dx.doi.org/10.1109/iiswc50251.2020.00018.

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Reports on the topic "Reliability characterization"

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Spratt, Randolph W. STOVL Fighter Propulsion Reliability, Maintainability and Supportability Characterization. Fort Belvoir, VA: Defense Technical Information Center, March 1990. http://dx.doi.org/10.21236/ada224221.

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Yang, Benjamin Bing-Yeh, Jose Luis Cruz-Campa, Gad S. Haase, Paiboon Tangyunyong, Edward Isaac Colr, Murat Okandan, and Gregory N. Nielson. Defect localization, characterization and reliability assessment in emerging photovoltaic devices. Office of Scientific and Technical Information (OSTI), April 2014. http://dx.doi.org/10.2172/1177042.

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Kramer, K. Status Quo of PVT Characterization. Edited by Korbinian Kramer,. IEA SHC Task 60, September 2020. http://dx.doi.org/10.18777/ieashc-task60-2020-0004.

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Report B1: This report therefore aims at displaying the Status Quo of PVT Characterization in order to support PVT technology in its further development and applications. The report is hence of interest for researchers as well as public and private sector stakeholders. A key finding is that the reliability and durability of PVT modules are especially challenged at elevated temperatures and higher humidity loads. The test methods available from the IEC and ISO standards are covering the specifics of PV and ST module’s, most of which are similar for PVT modules, too.
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Robert W Youngblood. Treatment of Passive Component Reliability in Risk-Informed Safety Margin Characterization FY 2010 Report. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1004257.

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French, Roger, Bryan Huey, Alexandra Longacre, Michael Martin, Thomas Moran, Oleg Kolosov, Eric Schneller, et al. Reliability and Power Degradation Rates of PERC Modules Using Differentiated Packaging Strategies and Characterization Tools. Office of Scientific and Technical Information (OSTI), June 2021. http://dx.doi.org/10.2172/1804123.

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Johnson, D. R., R. W. McClung, M. A. Janney, and W. M. Hanusiak. Needs assessment for nondestructive testing and materials characterization for improved reliability in structural ceramics for heat engines. Office of Scientific and Technical Information (OSTI), August 1987. http://dx.doi.org/10.2172/6185356.

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Boring, Ronald, Diego Mandelli, Martin Rasmussen, Sarah Herberger, Thomas Ulrich, Katrina Groth, and Curtis Smith. Integration of Human Reliability Analysis Models into the Simulation-Based Framework for the Risk-Informed Safety Margin Characterization Toolkit. Office of Scientific and Technical Information (OSTI), June 2016. http://dx.doi.org/10.2172/1371517.

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Boesch, F. T., A. Satyanarayana, and C. L. Suffel. Some Alternate Characterizations of Reliability Domination. Fort Belvoir, VA: Defense Technical Information Center, January 1990. http://dx.doi.org/10.21236/ada264594.

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Baral, Aniruddha, Jeffery Roesler, and Junryu Fu. Early-age Properties of High-volume Fly Ash Concrete Mixes for Pavement: Volume 2. Illinois Center for Transportation, September 2021. http://dx.doi.org/10.36501/0197-9191/21-031.

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High-volume fly ash concrete (HVFAC) is more cost-efficient, sustainable, and durable than conventional concrete. This report presents a state-of-the-art review of HVFAC properties and different fly ash characterization methods. The main challenges identified for HVFAC for pavements are its early-age properties such as air entrainment, setting time, and strength gain, which are the focus of this research. Five fly ash sources in Illinois have been repeatedly characterized through x-ray diffraction, x-ray fluorescence, and laser diffraction over time. The fly ash oxide compositions from the same source but different quarterly samples were overall consistent with most variations observed in SO3 and MgO content. The minerals present in various fly ash sources were similar over multiple quarters, with the mineral content varying. The types of carbon present in the fly ash were also characterized through x-ray photoelectron spectroscopy, loss on ignition, and foam index tests. A new computer vision–based digital foam index test was developed to automatically capture and quantify a video of the foam layer for better operator and laboratory reliability. The heat of hydration and setting times of HVFAC mixes for different cement and fly ash sources as well as chemical admixtures were investigated using an isothermal calorimeter. Class C HVFAC mixes had a higher sulfate imbalance than Class F mixes. The addition of chemical admixtures (both PCE- and lignosulfonate-based) delayed the hydration, with the delay higher for the PCE-based admixture. Both micro- and nano-limestone replacement were successful in accelerating the setting times, with nano-limestone being more effective than micro-limestone. A field test section constructed of HVFAC showed the feasibility and importance of using the noncontact ultrasound device to measure the final setting time as well as determine the saw-cutting time. Moreover, field implementation of the maturity method based on wireless thermal sensors demonstrated its viability for early opening strength, and only a few sensors with pavement depth are needed to estimate the field maturity.
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Warrick, Arthur, Uri Shani, Dani Or, and Muluneh Yitayew. In situ Evaluation of Unsaturated Hydraulic Properties Using Subsurface Points. United States Department of Agriculture, October 1999. http://dx.doi.org/10.32747/1999.7570566.bard.

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The primary information for accurately predicting water and solute movement and their impact on water quality is the characterization of soil hydraulic properties. This project was designed to develop methods for rapid and reliable estimates of unsaturated hydraulic properties of the soil. Particularly, in situ methodology is put forth, based on subsurface point sources. Devices were designed to allow introduction of water in subsurface settings at constant negative heads. The ability to operate at a negative head allows a direct method of finding unsaturated soil properties and a mechanism for eliminating extremely rapid preferential flow from the slow matrix flow. The project included field, laboratory and modeling components. By coupling the measurements and the modeling together, a wider range of designs can be examined, while at the same time realistic performance is assured. The developed methodology greatly expands the possibilities for evaluating hydraulic properties in place, especially for measurements in undisturbed soil within plant rooting zones. The objectives of the project were (i) To develop methods for obtaining rapid and reliable estimates of unsaturated hydraulic properties in situ, based on water distribution from subsurface point sources. These can be operated with a constant flow or at a constant head; (ii) To develop methods for distinguishing between matrix and preferential flow using cavities/permeameters under tension; (iii) To evaluate auxiliary measurements such as soil water content or tensions near the operating cavities to improve reliability of results; and (iv: To develop numerical and analytical models for obtaining soil hydraulic properties based on measurements from buried-cavity sources and the auxiliary measurements. The project began in July 1995 and was terminated in November 1998. All of the objectives were pursued. Three new subsurface point sources were designed and tested and two old types were also used. Two of the three new designs used a nylon cloth membrane (30 mm) arranged in a cylindrical geometry and operating at a negative water pressure (tension). A separate bladder arrangement allowed inflation under a positive pressure to maintain contact between the membrane and the soil cavity. The third new design used porous stainless steel (0.5 and 5 mm) arranged in six segments, each with its own water inlet, assembled to form a cylindrical supply surface when inflated in a borehole. The "old" types included an "off-the-shelf" porous cup as well as measurements from a subsurface drip emitter in a small subsurface cavity. Reasonable measurements were made with all systems. Sustained use of the cloth membrane devices were difficult because of leaks and plugging problems. All of the devices require careful consideration to assure contact with the soil system. Steady flow was established which simplified the analysis (except for the drip emitter which used a transient analysis).
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