Journal articles: 'Reference circuit'

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Latenko, V. I., I. A. Ornatsky, S. O. Fil, and Ie O. Zaitsev. "DIGITAL CONVERTERS METROLOGICAL SPECIFICATION FOR RESISTANT THERMAL THERMOSENSORS COMPARE." Tekhnichna Elektrodynamika 2021, no. 1 (January 14, 2021): 84–89. http://dx.doi.org/10.15407/techned2021.01.084.

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In this paper presents comparative metrological analysis of two options for connecting Pt100 resistive temperature sensors to high-precision analog-to-digital converters is carried out: a proportional circuit in which the reference resistor serves to form the reference voltage, and a canonical 4-wire circuit where the resistance of the reference resistor is measured in the same way as the resistance of the temperature sensor are presented. It is shown that the error of the one-stroke proportional circuit is determined by the long-term instability of the gain, while the resulting error of the push-pull canonical circuit is determined by the short-term instability of several elements. The insignificant advantage of the canonical circuit with the accuracy of conversion and in the absence of additional requirements for the input of the reference voltage is affirmed, which gives recommendations for the practical application of the circuits considered in meters of temperature. References 10, figures 2, table 1.

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Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

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Hu, Rong Bin, Xiang Cai, and Xiao Ying Zhang. "A Novel BiCMOS Current-Mode Bandgap Reference." Advanced Materials Research 760-762 (September 2013): 1048–52. http://dx.doi.org/10.4028/www.scientific.net/amr.760-762.1048.

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In this paper, a novel BiCMOS current steering bandgap is presented, which includes reference core, start-up circuit, and output circuit, of which the reference core is used to produce the temperature-stable current, the start-up to start up the reference core when powered on, and the output circuit to proportionally transport the reference current to other cells on the same chip. Compared to the traditional voltage-mode bandgap reference, because of the adoption of the current-steering mode, the reference proposed in this paper, has the merits of being immune to variation of the power supply, minimum transport consumption, better matches, temperature stability, smaller area, auto-startup, and so on, which are specially needed in AD/DA application. The simulation shows that the proposed current-mode reference circuit has full temperature range coefficient of 8.9ppm, which is better than that of the traditional voltage-and current-mode reference circuits.

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Duan, Ning, Shulin Liu, Xiangdong Zhu, Jinjun Pei, and Haipeng Zhu. "A High-precision Current Sense Circuit with Trimming for DC-DC Converts." MATEC Web of Conferences 232 (2018): 04057. http://dx.doi.org/10.1051/matecconf/201823204057.

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A high-precision current sense circuit with trimming is proposed to realize the over-current protection of the power management chip and improve its conversion efficiency. Based on solving the problem of voltage offset and current inrush caused by process deviation, this circuit can detect the value of the inductor current accurately. By designing the bandgap reference circuit and the reference voltage bias network, the required stable reference voltage and bias current can be obtained. The trimming bit selection circuit can realize the trimming function. This circuit is designed with TSMC 180nm 1P3M GEN2 process, and all circuits are verified by Cadence Spectre.

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Petkovsek, Marko, and Peter Zajec. "Evaluating Common-Mode Voltage Based Trade-Offs in Differential-Ended and Single-Supplied Signal Conditioning Amplifiers." Electronics 10, no. 16 (August 17, 2021): 1982. http://dx.doi.org/10.3390/electronics10161982.

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This paper focuses on a differential voltage measurement in low-voltage automotive devices whose subunits are separated with a low-side safety switch. In contrast to conventional applications with high-side switches, a common-mode voltage (CMV) with negative polarity exists at the input of the signal conditioning circuitry. To overcome the shortage of dedicated integrated circuits capable of withstanding negative CMV, the paper investigates single- and two-stage differential circuits with single-supplied operational amplifiers to find a cost-optimized counterpart. In addition, the proposed procedure tunes the circuit parameters in such a manner to obtain the largest possible full-scale range at the output. Though, such optimization results in very uncommon values for gain and reference voltages. This issue is additionally evaluated for reference voltages that are either cost-effective or more easily accessible to increase the circuit feasibility. Since the impact of resistances on circuits’ behaviour could be diminished to a great extent using high-precision and matched pair resistors, the sensitivity analysis was investigated only for a reference voltage change. Furthermore, a reversed termination of measured voltages results in a simplified reference voltage selection without hindering circuits’ performance, proven by simulation and experimental results.

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Gidney, Craig. "Stim: a fast stabilizer circuit simulator." Quantum 5 (July 6, 2021): 497. http://dx.doi.org/10.22331/q-2021-07-06-497.

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This paper presents “Stim", a fast simulator for quantum stabilizer circuits. The paper explains how Stim works and compares it to existing tools. With no foreknowledge, Stim can analyze a distance 100 surface code circuit (20 thousand qubits, 8 million gates, 1 million measurements) in 15 seconds and then begin sampling full circuit shots at a rate of 1 kHz. Stim uses a stabilizer tableau representation, similar to Aaronson and Gottesman's CHP simulator, but with three main improvements. First, Stim improves the asymptotic complexity of deterministic measurement from quadratic to linear by tracking the inverse of the circuit's stabilizer tableau. Second, Stim improves the constant factors of the algorithm by using a cache-friendly data layout and 256 bit wide SIMD instructions. Third, Stim only uses expensive stabilizer tableau simulation to create an initial reference sample. Further samples are collected in bulk by using that sample as a reference for batches of Pauli frames propagating through the circuit.

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Kushwaha, Dinesh, and D. K. Mishra. "Nano Power Current Reference Circuit consisting of Sub-threshold CMOS Circuits." Circulation in Computer Science 2, no. 1 (January 24, 2017): 1–4. http://dx.doi.org/10.22632/ccs-2016-251-36.

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This paper proposes a low voltage CMOS Nano power current reference circuit and presents its performance with circuit simulation in 180- nm UMC CMOS technology. The proposed circuit consists of start-up, Bias-voltage, current-source sub-circuits with most of the MOSFETs operating in sub-threshold region. Simulation results shows that the circuit generates a stable reference current of 4-nA in supply voltage range 1 V- 1.8 V with line sensitivity of 0.203%/V.The temperature coefficient of the current was 7592ppm/°C at 1.8 V in the range of 0°C-100°C. The power dissipation was 380 NW at 1.8 V Supply. The proposed circuit would be suitable for use in sub-threshold –operated power-aware large-scale integration

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Zawawi, Ruhaifi Bin Abdullah, Wajahat H. Abbasi, Seung-Hwan Kim, Hojong Choi, and Jungsuk Kim. "Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry." Energies 13, no. 11 (June 10, 2020): 2986. http://dx.doi.org/10.3390/en13112986.

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The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges. Channel-length modulation in the transistors causes the circuit to be sensitive to power supply variation. To solve this inherent problem, this paper proposes a new output-voltage-line-regulation controller circuit. When a variation occurs in the power supply, the controller promptly responds to the supply deviation and removes unwanted current in the output path of the reference circuit. The proposed circuit was implemented in a 0.35-μm SK Hynix CMOS standard process. The experimental results demonstrated that the proposed reference circuit could generate a reference voltage of 0.895 V under a power supply voltage of 3.3 V, line regulation of 1.85 mV/V in the supply range of 2.3 to 5 V, maximum power supply rejection ratio (PSRR) of −54 dB, and temperature coefficient of 11.9 ppm/°C in the temperature range of 25 to 100 °C.

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Zawawi, Ruhaifi Bin Abdullah, Hojong Choi, and Jungsuk Kim. "High PSRR Wide Supply Range Dual-Voltage Reference Circuit for Bio-Implantable Applications." Electronics 10, no. 16 (August 21, 2021): 2024. http://dx.doi.org/10.3390/electronics10162024.

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On-chip systems are challenging owing to the limited size of the components, such as the capacitor bank in the rectifier. With a small on-chip capacitor, the output voltage of the rectifier might ring if the circuit experiences significant changes in current. The reference circuit is the first block after the rectifier, and the entire system relies on its robustness. A fully integrated dual-voltage reference circuit for bio-implantable applications is presented. The proposed circuit utilizes nonlinear current compensation techniques that significantly decrease supply variations and reject high-supply ripples for various frequencies. The reference circuit was verified using a 0.35 µm complementary metal-oxide semiconductor (CMOS) process. Maximum PSRR values of −112 dB and −128 dB were obtained. With a supply range from 2.8 to 12 V, the proposed design achieves 0.916 and 1.5 mV/V line regulation for the positive and negative reference circuits, respectively.

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10

Guang, Yang, Bin Yu, and Huang Hai. "Design of a High Performance CMOS Bandgap Voltage Reference." Advanced Materials Research 981 (July 2014): 90–93. http://dx.doi.org/10.4028/www.scientific.net/amr.981.90.

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Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

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Vera Casañas, César William, Thainann Henrique Pereira de Castro, Gabriel Antonio Fanelli de Souza, Robson Luiz Moreno, and Dalton Martini Colombo. "Review of CMOS Currente References." Journal of Integrated Circuits and Systems 17, no. 1 (April 30, 2022): 1–9. http://dx.doi.org/10.29292/jics.v17i1.592.

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A current reference is able to provide a precise and accurate current for other circuits inside a chip. This type of electronic circuit is employed as a building block in numerous analog and mixed-signal circuits. Moreover, it is a fundamental component of current-mode circuits. This work discusses the basic and essential concepts of designing CMOS integrated current references. A review of conventional topologies is presented, including current mirrors and current references. Temperature dependence is discussed, along with PTAT and CTAT topologies, and some low-power/low-voltage implementations are also presented.

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Zhang, ZiHao, Jebreel M. Salem, and Dong Sam Ha. "A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (July 1, 2017): 000118–21. http://dx.doi.org/10.4071/2380-4491.2017.hiten.118.

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Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications using commercial-off-the-shelf (COTS) 4H-SiC transistors. The proposed voltage reference adopts Widlar bandgap reference topology, and it aims to provide a negative reference voltage for Gallium Nitride (GaN) circuits operating at high temperatures. Measurement results indicate that the proposed circuit provides a negative reference voltage with a low temperature coefficient of 42 ppm/°C for temperatures ranging from 25 °C to 250 °C. The proposed circuit also operates reliably for a wide supply voltage range of −7.5 V to −15 V for the temperature range.

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13

Yang, H. C., P. C. Canfield, and D. J. Allstot. "One-transistor GaAs voltage reference circuit." Electronics Letters 25, no. 7 (1989): 464. http://dx.doi.org/10.1049/el:19890319.

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Ishibe, Eder Issao, and João Navarro. "A CMOS Bandgap Reference Circuit with a Temperature Coefficient Adjustment Block." Journal of Integrated Circuits and Systems 9, no. 1 (December 28, 2014): 16–24. http://dx.doi.org/10.29292/jics.v9i1.385.

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A bandgap reference voltage source with a temperature coefficient adjustment block was proposed. The bandgap topology employs current summation and the circuit was designed through metaheuristic algorithms in a 0.35-mm CMOS technology. Simulations with typical parameters show that the designed circuit has temperature coefficient of 15 ppm/0C, line regulation of 263 ppm/V, and current consumption of 2.71 uA in 1.0 V power supply. An additional 3-bit temperature adjustment block allowed keeping the temperature coefficient values lower than 26.6 ppm/0C for 90% of the circuits, without interfering with the reference voltage output or line regulation values.

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Li, Lin An, Ming Tang, Wen Ou, and Yang Hong. "An All CMOS Current Reference." Applied Mechanics and Materials 135-136 (October 2011): 192–97. http://dx.doi.org/10.4028/www.scientific.net/amm.135-136.192.

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In this paper, an all CMOS current reference circuit which generates a reference current independent of PVT (Process, supply Voltage, and Temperature) variations is presented. The circuit consists of a self-biased current source (SBCS) and two nested connected transistors which supply a voltage with positive temperature coefficient and the resulting reference circuit has low temperature coefficient. It is based on CSMC 0.5um mixed-signal process with the supply voltage of 5V. The precision of reference current is about ±3.05% when considering the process, supply voltage and temperature variation at the same time.

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Lapsongphon, Chantima, and Saroj Pullteap. "A design of LED driver circuit for reducing production cost in Thailand industry." MATEC Web of Conferences 192 (2018): 02067. http://dx.doi.org/10.1051/matecconf/201819202067.

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In this paper, the designing of a modified flyback converter circuit for 100 Watts LED lighting has been demonstrated. Some important factors, i.e. efficiency (ɛ), power factor (PF), and total harmonic current distortion (THDi), are considered for interpreting the performance of the proposed circuit. A commercial driver circuit which an efficiency of 94% and price of ∼2,000 THB has, consequently, been employed as a reference circuit. Two experimental setups, performance investigation and cost analysis, have been demonstrated for confirming the concept designed. However, the experimental results shown that an efficiency of the developed driver is 93.93%, while the implementation cost is 1,257 THB respectively. Compared with the reference circuit, we found that the performance of modified flyback circuit is almost equivalent in any parameters, while the cost is cheaper than the reference of 37.15%. This implies that there is a possibility to transfer the knowledge of designing concept to mass production for Thailand industry. In addition, it would thus be reduced the investment cost by the importation driver circuits from other countries and also to support Thailand industry for producing the high quality goods for exporting aboard.

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Strle, Drago, and Janez Trontelj. "On Self-Aware Mixed-Signal Systems Based on S-Δ ADC." International Journal of Embedded and Real-Time Communication Systems 3, no. 2 (April 2012): 92–110. http://dx.doi.org/10.4018/jertcs.2012040105.

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In this paper the authors discuss the issues related to the self-awareness of high-resolution, mixed-signal circuits and systems, based on S-? ADC, which is the most important and sensitive module and the key element for analogue to digital conversion. The basic methodology and framework for improving the self-awareness of such systems are presented. The methodology is based on efficient real-time measurements of a high-resolution, mixed-signal system using pseudo random signal source, real-time calculation of a distance between responses, the possibility to adapt measured circuit to minimize the distance, and changing the parameters of a reference system according to learning rules. The use of pseudo-random noise as a signal source leads to efficient and cost-effective measurements that run in parallel to the main signal processing. The calculation of the distance between the system and its reference are theoretically analysed and verified using Matlab model. The response of a system together with the response of high precision analogue to digital converter (ADC) is compared to the response of a bit-true model of a reference digital circuit. The differences are calculated using simple area-efficient cross-correlation algorithm. Together with adaptation strategy and tuning circuitry it forms the basis for self-awareness of mixed-signal circuits.

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Ibrahim, Emad S. "Practical Calculations of Electro-Dynamic Stresses on Bus Structures During Short Circuits with Particular Reference to Delta Steel Mill Comp." International Journal of Electrical Engineering & Education 29, no. 1 (January 1992): 81–93. http://dx.doi.org/10.1177/002072099202900109.

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Practical calculation of electrodynamic stress on bus structures during short circuits with particular reference to Delta Steel Mill Co. A simple, practical method of calculating the mechanical stresses in busbar structures during short circuits is developed and presented. Not only the short circuit current but also the mechanical characteristics of the busbar structures are considered, and the method should be applicable to a wide range of structures and circuit conditions.

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Nagulapalli, R., K. Hayatleh, S. Barker, A. A. Tammam, P. Georgiou, and F. J. Lidgey. "A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient." Journal of Circuits, Systems and Computers 28, no. 07 (June 27, 2019): 1950120. http://dx.doi.org/10.1142/s0218126619501202.

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This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65[Formula: see text]nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55[Formula: see text]V, and generates a 286[Formula: see text]mV reference voltage with a temperature coefficient of 59[Formula: see text]ppm/∘C. The circuit takes 413[Formula: see text]nA current from 0.55[Formula: see text]V supply and occupies 0.00986[Formula: see text]mm2 of active area.

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YILDIRIM, FATMA, ESMA UZUNHİSARCIKLI, RECAI KILIÇ, and MUSTAFA ALÇI. "EXPERIMENTAL VERIFICATION OF HIGH FREQUENCY PERFORMANCE OF FTFN-BASED SIMPLE CHAOTIC CIRCUIT." International Journal of Bifurcation and Chaos 15, no. 01 (January 2005): 191–205. http://dx.doi.org/10.1142/s0218127405012107.

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In this study, we aimed to improve the VOA-based simple chaotic circuit proposed by Sprott in the literature by using FTFN-based circuit topology. And also, by choosing one of the FTFN-based circuits whose chaotic dynamics are very similar to that of Chua's circuit as a reference model, we tested the performance of this model at different frequencies and its extended frequency performance has been verified by laboratory experiments and PSpice simulations.

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Che Mustapha, Nurul Arfah, A. H. M. Zahirul Alam, Sheroz Khan, and Amelia Wong Azman. "EFFICIENT CAPACITANCE SENSING FOR WIRELESS HEALTH MONITORING SYSTEM." IIUM Engineering Journal 17, no. 2 (November 30, 2016): 21–29. http://dx.doi.org/10.31436/iiumej.v17i2.609.

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This paper presents a low power capacitance to voltage converter (CVC) circuit using two differential amplifier circuits, two Schottky rectifier diodes constructed in symmetrical manner and combined with instrumentation amplifier circuits. The differential capacitance to voltage simulation work has been realized with cheap discrete components. Combination energy from solar, vibration and heat is expected to be used to source the capacitance circuit. Constant dc voltage of 3 V has been used to source the CVC circuit in this work. It is found by the simulation, the converter circuit consumes 3.9 mW of total power, operates at 40 kHz using 400 mV excitation signal. The circuit is able to detect changes of capacitance from 4 â€“ 12.5 pF using reference capacitance of 5 pF. Sensitivity of 0.132 mV for 1 fF capacitance change has been observed in the circuit. This circuit is suitable for wireless health monitoring system.

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Zhang, Wei Juan, Yan Zhao, Ju Wang, and Kun Li. "A Band-Gap Voltage Reference for LDO Circuit." Applied Mechanics and Materials 599-601 (August 2014): 626–30. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.626.

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A band-gap voltage reference applicable for LDO circuit was designed. The band-gap voltage reference with lower change rate and low temperature-drift and high PSRR was acquired, which uses the two stage operational amplifier as the input terminal, and the miller compensation circuit was adopted in order to improve the stability of the voltage reference circuit. The circuit was simulated with Cadence tool and 0.5μm CMOS model. The results show that the reference voltage is 1.2182V, the PSRR of band-gap voltage reference is-76.8dB. The measured results indicated that the designed band-gap voltage reference is prospective for application in LDO circuit.

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Chen, Xi, Liang Li, Xing Fa Huang, Xiao Feng Shen, and Ming Yuan Xu. "A CMOS Bandgap Reference with Temperature Compensation." Applied Mechanics and Materials 667 (October 2014): 401–4. http://dx.doi.org/10.4028/www.scientific.net/amm.667.401.

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This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.

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Osipov, Dmitry, and Steffen Paul. "Temperature-Compensated $\beta$ -Multiplier Current Reference Circuit." IEEE Transactions on Circuits and Systems II: Express Briefs 64, no. 10 (October 2017): 1162–66. http://dx.doi.org/10.1109/tcsii.2016.2634779.

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Zhu, Jun, Wan Kui Li, Hai Xing Wang, and Li Li Han. "The Hardware System Design of PMSM Controller Based on DSP2812." Applied Mechanics and Materials 273 (January 2013): 454–59. http://dx.doi.org/10.4028/www.scientific.net/amm.273.454.

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For the efficiency of PMSM, in the paper the matched controller was developed to improve the servo performance of permanent magnet synchronous servo system. According to the basic principle of vector control for PMSM, the hardware system of PMSM controller was constituted based on TMS320F2812, it contains power drive circuit, control circuit, feedback circuit and other auxiliary circuits. It can provide reference scheme for the design of PMSM controller, and laid the foundation for the industrial production of the PMSM controller.

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Wang, San-Fu. "A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages." Journal of Sensors 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/1436371.

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This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC) applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR) is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

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Zawawi, Ruhaifi Bin Abdullah, Hojong Choi, and Jungsuk Kim. "High-PSRR Wide-Range Supply-Independent CMOS Voltage Reference for Retinal Prosthetic Systems." Electronics 9, no. 12 (November 30, 2020): 2028. http://dx.doi.org/10.3390/electronics9122028.

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This paper presents a fully integrated voltage-reference circuit for implantable devices such as retinal implants. The recently developed retinal prostheses require a stable supply voltage to drive a high-density stimulator array. Accordingly, a voltage-reference circuit plays a critical role in generating a constant reference voltage, which is provided to a low-voltage-drop regulator (LDO), and filtering out the AC ripples in a power-supply rail after rectification. For this purpose, we use a beta-multiplier voltage-reference architecture to which a nonlinear current sink circuit is added, to improve the supply-independent performance drastically. The proposed reference circuit is fabricated using the standard 0.35 µm technology, along with an LDO that adopts an output ringing compensation circuit. The novel reference circuit generates a reference voltage of 1.37 V with a line regulation of 3.45 mV/V and maximum power-supply rejection ratio (PSRR) of −93 dB.

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Raman and Ramnish Kumar. "Design and Performance Analysis of Inverter Using ECRL, MERL and PFAL." International Journal of Research in Informative Science Application & Techniques (IJRISAT) 1, no. 1 (September 10, 2017): 27–34. http://dx.doi.org/10.46828/ijrisat.v1i1.20.

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In this paper, different low energy design techniques are analyzed to overcome the shortcoming of traditional circuits. An inverter circuit is used as a reference circuits to compare three adiabatic logic designs like ECRL, MERL and PFAL. The ECRL, MERL and PFAL designed inverter circuits are simulated by using mentor graphics VLSI design software Pyxis _v10.5_5_201606075 and the obtained results are compared in terms of rise time, fall time, transistor count, delay, slew rate etc. Finally, I calculated the delays, Slew rate and other parameter of PFAL based circuit results better as compared to ECRL and MERL.

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Azimi, Mohammad, Mehdi Habibi, and Hamidreza Karimi-Alavijeh. "An organic, threshold voltage based, all PMOS, voltage reference generator for flexible sensor tags." Flexible and Printed Electronics 6, no. 4 (December 1, 2021): 045015. http://dx.doi.org/10.1088/2058-8585/ac43f9.

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Abstract The developments and advances achieved in organic semiconductors have promised lower costs for integrated circuit production and also fabrication of electronic circuits using printed technology on unconventional substrates such as plastic, clothing, and even skin. An important building block essential to most electronic circuits is a voltage, process, and temperature independent potential generator which can be used to bias amplifiers and produce a fixed reference for sensor devices. The generation of a voltage reference is also important for voltage regulators. Currently, most reported organic integrated circuits use only p-type OFETs in their circuits due to simpler fabrication procedures. Furthermore, air stable p-type organic semiconductors such as pentacene and CuPc are well characterized. In this paper, a low power two stage all PMOS voltage reference generator is proposed. Since properties such as threshold voltage value and device aging are dependent on the OFET structure, the type of device chosen for this purpose will have a direct impact on the circuit performance. Three different types of OFETs with silver, copper, and gold drain/source electrodes are studied in this work. Performance factors such as line sensitivity (LS), temperature coefficient (TC), power consumption, time constant, and output drifts of the fabricated integrated circuits are measured and reported to verify the characteristics of the proposed circuits. It is shown that the drain/source metal choice affects the threshold voltage dependent output potential of the reference generators.

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SHI, L. F., X. MA, G. H. QIN, L. Y. CHENG, and X. Q. LAI. "A WIDE SUPPLY RANGE BANDGAP VOLTAGE REFERENCE WITH CURVATURE COMPENSATION." Journal of Circuits, Systems and Computers 22, no. 01 (January 2013): 1250068. http://dx.doi.org/10.1142/s0218126612500685.

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For the requirement of power management controller chips, a wide supply range bandgap voltage reference circuit is presented. The preregulated circuit based on the regulation characteristic of zener diode extends the supply range and increases power supply rejection ratio (PSRR). Compensated by the base-emitter voltage (V BE ) linearization technique, the temperature stability of the bandgap circuit is improved further. The proposed circuit is implemented in a 0.4 μm bipolar CMOS DMOS (BCD) process and Spice simulation has been done for validation. The results of simulation and test show that the supply range of this circuit can reach 7.2 V to 40 V and 159 μV/V of supply voltage dependence; the temperature coefficient is just 3.5 ppm/°C over a wide temperature of -40°C to 125°C and PSRR is up to -94 dB at 1 kHz. For the perfective performance, this circuit can be used in wide temperature and wide supply range integrated circuit design.

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Han, DongYang, XiaoNing Xin, and GuoFeng Liu. "A reference current source with a low temperature coefficient." MATEC Web of Conferences 232 (2018): 04077. http://dx.doi.org/10.1051/matecconf/201823204077.

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In view of the high demand for low temperature coefficient reference current sources in integrated circuits, the advantages and disadvantages of several typical reference current sources in circuit structure and temperature characteristics are compared. In this paper, a low temperature coefficient reference current source is designed. Based on Hua Hong HHNECGE 0.35um process, the output current is 0.4uA, the temperature range is -40°C-125°C, and the temperature coefficient is 7.6ppm/°C under typical process angle. Other processes The temperature coefficient under the corner is at 10ppm/°C.

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32

Katarzyński, Jacek, and Marek Olesz. "Fault Loop Impedance Measurement in Circuits Fed by UPS and Principle of Safety Protection." Sustainability 12, no. 23 (December 4, 2020): 10126. http://dx.doi.org/10.3390/su122310126.

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This paper indicates a significant problem of uncertainty of fault loop impedance (FLI) measurement in circuits powered from uninterruptible power supply (UPS) (double-conversion AC-DC-AC). The correctly determined value of this impedance, related to the short-circuit current disconnection time and to the reference value, is one of the most important elements that determines the approval of an electrical installation and its receivers for operation. To define the principles of FLI measurement, several hundred measurements of the short-circuit loop impedance in the circuits fed by the UPS, in various UPS operation modes and with various FLI instruments, were made, which allowed for the definition of measurement rules that reduce the error in assessing the effectiveness of protection against electric shock by automatic disconnection of supply. Based on the analysis of voltage and current waveforms recorded during the real short-circuit tests in the circuit fed by the UPS, a proprietary algorithm for determining the short-circuit loop impedance has been proposed.

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33

Kim, Sang-Hwan, Byoung-Soo Choi, Jimin Lee, Junwoo Lee, Jewon Lee, Jae-Hyoun Park, Kyoung-Il Lee, and Jang-Kyoo Shin. "Averaging Pixel Current Adjustment Technique for Reducing Fixed Pattern Noise in the Bolometer-Type Uncooled Infrared Image Sensor." Sensors 19, no. 7 (April 6, 2019): 1653. http://dx.doi.org/10.3390/s19071653.

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In this paper, we propose an averaging pixel current adjustment technique for reducing fixed pattern noise (FPN) in the bolometer-type uncooled infrared image sensor. The averaging pixel current adjustment technique is composed of active pixel, reference pixel, and calibration circuit. Polysilicon resistors were used in each active pixel and reference pixel. Resistance deviation among active pixels integrated with the same resistance value cause FPN. The principle of the averaging pixel current adjustment technique for removing FPN is based on the subtraction of dark current of the active pixel from the dark current of the reference pixel. The subtracted current is converted into the voltage, which contains pixel calibration information. The calibration circuit is used to adjust the calibration current. After calibration, the nano-ampere current is output with small deviation. The proposed averaging pixel current adjustment technique is implemented by a chip composed of a pixel array, a calibration circuit, average current generators, and readout circuits. The chip was fabricated using a standard 0.35 μm CMOS process and its performance was evaluated.

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Sun, Junwei, Qinfei Yang, and Yanfeng Wang. "Memristive Circuit Design of Five-Person Voter Based on Memristor Ratioed Logic." Journal of Nanoelectronics and Optoelectronics 15, no. 12 (December 1, 2020): 1482–93. http://dx.doi.org/10.1166/jno.2020.2895.

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Conventional CMOS-based logic circuits are approaching their limits when it comes to speed and energy consumption, so the development of new electronic components becomes critical. Memristor is a nano-structured special electronic device with the advantages of simple structure, low power consumption and easy integration. This invention supplys a new method for developing complex logic circuits. This article mainly presents the design of a five-person voter circuit. The OR/AND logic can be accomplished by varying the polarity of two parallel memristors. On the basis of the two logic circuits, adder and comparator are constructed. Further, based on the adder and comparator, a five-person voter is implemented. The correctness and rationality of the five-person voter based on MRL are confirmed via logistical analysis and simulation. Compared with the traditional logic circuits, the logic circuit designed in this paper has advantages in area cost. The realization of the five-person voter circuit further proves that the logic circuit based on memristor can be cascaded. The research results are expected to build more complex circuits, which may provide a reference for the design of other practical circuits.

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35

Pike, Alex, Adrien Corne, Frank Bohac, and Ravi Ananth. "Comparison of a Current Mode Reference Generator vs.a ΔVBE Bandgap Circuit in a 1.0μm Partially-Depleted Silicon-On-Insulator CMOS Process for High Temperature (220 °C) Environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (July 1, 2017): 000234–37. http://dx.doi.org/10.4071/2380-4491.2017.hiten.234.

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Abstract Two different reference generator circuits were designed, fabricated and tested, on the same silicon die using a 1.0μ CMOS SOI process that is suitable for operation at high temperatures. One of the reference generators was a traditional bandgap circuit. The other was a more novel current-mode reference that can notionally generate any output voltage. Testing was performed over a wide temperature range from −50°C to 220°C with a supply variation of 4V to 6V.

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Wang, Zhi Ping, Ai Dong Xu, Yan Song, and Bing Jun Yan. "Design and Develop of Functional Safety Temperature Transmitter for Fault Status." Applied Mechanics and Materials 385-386 (August 2013): 1272–77. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1272.

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According to the requirements of the functional safety temperature transmitter high reliability, this paper selects the micro-power voltage reference, the reset monitor, the D-type flip-flop and the OR gate to design the functional safety temperature transmitter protection circuit for fault status. The protection circuit takes power from the data line of HART fieldbus by micro-power voltage references. According to the control signal of the functional safety transmitter, the protection circuit utilizes the state latch of D-type flip-flop, and realizes the functional safety temperature transmitter protection circuit for fault status.

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37

Kim, Sung-Yeon, Jeong-Su Park, and Wang-Sang Lee. "Development and Verification of Indirect Lightning-Induced Transient Protection Circuit for Avionics System." Applied Computational Electromagnetics Society 36, no. 6 (August 6, 2021): 670–75. http://dx.doi.org/10.47037/2020.aces.j.360608.

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In this paper, an indirect lightning-induced transient protection circuit for avionics system is proposed, and its effectiveness is verified. The proposed circuit consists of a metal oxide varistor (MOV), a transient voltage suppression (TVS) diode, and a resistor. Compared with the conventional circuits (MOV or TVS diode), the improved noise suppression of the proposed circuit against indirect lightning strikes are experimentally verified in accordance with radio technical commission for aeronautics (RTCA) DO-160G Sec. 22. The highest attenuation levels of indirect lightning strike WF5A reference voltage and current signals are approximately 91.0% and approximately 98.4% for the input lightning signals, respectively.

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38

Kissinger, Aleks, and Arianne Meijer van de Griend. "CNOT circuit extraction for topologically-constrained quantum memories." Quantum Information and Computation 20, no. 7&8 (June 2020): 581–96. http://dx.doi.org/10.26421/qic20.7-8-4.

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Many physical implementations of quantum computers impose stringent memory constraints in which 2-qubit operations can only be performed between qubits which are nearest neighbours in a lattice or graph structure. Hence, before a computation can be run on such a device, it must be mapped onto the physical architecture. That is, logical qubits must be assigned physical locations in the quantum memory, and the circuit must be replaced by an equivalent one containing only operations between nearest neighbours. In this paper, we give a new technique for quantum circuit mapping (a.k.a. routing), based on Gaussian elimination constrained to certain optimal spanning trees called Steiner trees. We give a reference implementation of the technique for CNOT circuits and show that it significantly out-performs general-purpose routines on CNOT circuits. We then comment on how the technique can be extended straightforwardly to the synthesis of CNOT+Rz circuits and as a modification to a recently-proposed circuit simplification/extraction procedure for generic circuits based on the ZX-calculus.

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39

Abuelma'atti, Muhammad Taher, and Sa'ad Muhammad Al-Shahrani. "A Programmable Reference-Voltage Source." Active and Passive Electronic Components 21, no. 2 (1998): 113–16. http://dx.doi.org/10.1155/1998/57176.

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A simple circuit for realizing a current(voltage)-controlled reference voltage is presented. The feasibility of obtaining a temperature-insensitive reference voltage is explored. SPICE simulation results are included.

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40

Sahafi, A., J. Sobhi, and Z. D. Koozekanani. "Pico Watt sub-threshold CMOS voltage reference circuit." IEICE Electronics Express 10, no. 4 (2013): 20120945. http://dx.doi.org/10.1587/elex.10.20120945.

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41

Keat, ChongWei, Jeevan Kanesan, and Harikrishnan Ramiah. "Low-voltage, High-precision Bandgap Current Reference Circuit." IETE Journal of Research 58, no. 6 (2012): 501. http://dx.doi.org/10.4103/0377-2063.106760.

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42

Razavi, Behzad. "The Bandgap Reference [A Circuit for All Seasons]." IEEE Solid-State Circuits Magazine 8, no. 3 (2016): 9–12. http://dx.doi.org/10.1109/mssc.2016.2577978.

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Crovetti, P. S., and F. Fiori. "Compact, very low voltage, temperature-independent reference circuit." IET Circuits, Devices & Systems 1, no. 1 (2007): 63. http://dx.doi.org/10.1049/iet-cds:20050373.

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Covington, A. K. "Quick Reference Manual for Silicon Integrated-circuit Technology." Electrochimica Acta 31, no. 12 (December 1986): 1679. http://dx.doi.org/10.1016/0013-4686(86)87094-3.

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Li, Qiang, Xiao Yun Tan, and Guan Shi Wang. "A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope." Key Engineering Materials 503 (February 2012): 12–17. http://dx.doi.org/10.4028/www.scientific.net/kem.503.12.

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The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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Agarwal, Neeru, Neeraj Agarwal, Chih-Wen Lu, and Masahito Oh-e. "A Chopper-Embedded BGR Composite Noise Reduction Circuit for Clock Generator." Electronics 10, no. 18 (September 14, 2021): 2257. http://dx.doi.org/10.3390/electronics10182257.

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A chopper-embedded bandgap reference (BGR) scheme is presented using 0.18 μm CMOS technology for low-frequency noise suppression in the clock generator application. As biasing circuitry produces significant flicker noise, along with thermal noise from passive components, the proposed low-noise chopper-stabilized BGR circuit was designed and implemented for wide temperature range from −40 to 125 °C, including a startup and self-biasing circuit to reduce critical low-frequency noise from the bias circuitry and op amp input offset voltage. The BGR circuit generated a reference voltage of 1.25 V for a supply voltage range of 2.5–3.3 V. The gain of the implemented BGR operational transconductance amplifier is 84.1 dB. A non-overlapping clock circuit was implemented to reduce the clock skew effect, which is also one of the noise contributors. The noise analysis of a chopped bandgap voltage reference was evaluated through cadence periodic steady-state (PSS) analysis and periodic noise (PNoise) analysis. The low-frequency flicker noise was reduced from 1.5 to 0.4 μV/sqrt(Hz) at 1 KHz, with the proposed chopping scheme in the bandgap. Comparisons of the noise performance of the chopper-embedded BGR, with and without a low-pass filter, were also performed, and the results show a further reduction in the overall noise. A reduction in the flicker noise, from 181.3 to 10.26 mV/sqrt(Hz) at 100 KHz, was observed with the filter. All circuit blocks of the proposed BGR scheme were designed and simulated using the EDA tool HSPICE, and layout generation was carried out by Laker. The BGR architecture layout dimensions are 285.25 μm × 125.38 μm.

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Bansal, Deepika, Brahmadeo Prasad Singh, and Ajay Kumar. "Stack Contention-alleviated Precharge Keeper for Pseudo Domino Logic." Bulletin of Electrical Engineering and Informatics 6, no. 2 (June 1, 2017): 122–32. http://dx.doi.org/10.11591/eei.v6i2.597.

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The dynamic circuits are supposed to offer superior speed and low power dissipation over static CMOS circuits. The domino logic circuits are used for high system performance but suffer from the precharge pulse degradation. This article provides different design topologies on the domino circuits to overcome the charge sharing and charge leakage with reference to the power dissipation and delay. The precharge keeper circuit has been proposed such that the keeper transistors also work as the precharge transistors to realize multiple output function. The performance improvement of the circuit’s analysis have been done for adders and logic gates using HSPICE tool. The proposed keeper techniques reveal lower power dissipation and lesser delay over the standard keeper circuit with less transistor count for different process variation.

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Yue, Hongwei, Xiaofei Sun, Junxin Liu, Weilin Xu, Haiou Li, Baolin Wei, Taotao Wang, and Siyu Lin. "16.8/15.2 ppm/°C 81 nW High PSRR Dual-Output Voltage Reference for Portable Biomedical Application." Electronics 8, no. 2 (February 15, 2019): 213. http://dx.doi.org/10.3390/electronics8020213.

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A dual-output voltage reference circuit with two reference voltages of 281 mV (Vref1) and 320.5 mV (Vref2) is presented in this paper. With a novel and precise circuit structure, the proposed circuit, operating in the subthreshold region, integrates two different output voltages into a circuit to form a dual-output voltage reference, and cascode current mirrors are used to enhance the power supply rejection ratio (PSRR). The proposed circuit was designed in a standard 0.18-µm CMOS process and has a series of attractive features: low-temperature coefficient (TC), high-PSRR, low-Line sensitivity (LS), small-chip area and low-power consumption. Monte Carlo simulations for 2000 samples showed that the output voltages 281 mV and 320.5 mV had a variation coefficient of 1.73% and 1.44%, respectively. The minimum power consumption was 84.1 nW at 0.9 V supply, proving that the circuit is suitable for portable biomedical application. The active area of the proposed voltage reference was only 0.0086 mm2.

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Pal, Shishu, and Ashutosh Nandi. "Design of High Power Supply Rejection Ratio Complementary Metal-Oxide-Semiconductor Bandgap Voltage Reference Using Single Node Approach." Sensor Letters 17, no. 10 (October 1, 2019): 777–83. http://dx.doi.org/10.1166/sl.2019.4136.

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This paper describes a compact, low voltage and high power supply rejection ratio (PSRR) Bandgap voltage reference circuit by using subthreshold MOSFETs. The proposed reference circuit is implemented using 0.18 μm CMOS technology. The circuit simulation is performed using the Cadence Spectre and Synopsys Hspice. The circuit generates the mean output reference voltage of 164 mV and temperature coefficient of 15.5 ppm/°C when temperature is swept from –40 °C to 120 °C at power supply of 1.2 V. For better PSRR, a feed forward mechanism is used. The proposed design has only single transistor for start-up circuit. The measured settling time for output reference voltage is observed to be less than 4 μs. No filtering capacitor is used to improve the PSRR, which is –97 dB up to 1 MHz and subsequently reduces to –47.5 dB at 158 MHz.

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Ye, Rong Ke, and Rong Bin Hu. "A Bandgap Reference with High Order Temperature Compensation." Advanced Materials Research 1049-1050 (October 2014): 649–52. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.649.

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A kind of CMOS bandgap reference circuit with high order temperature compensation is introduced [1]. Compared to the traditional circuit, the bandgap reference proposed here has several advantages such as better temperature stability, smaller chip area, lower power consumption, self-power-on, and so on. Our design can be used in analog-to-digital or digital-to-analog converters, where high performance bandgap reference is required.

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Journal articles on the topic 'Reference circuit'

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