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Journal articles on the topic 'Recombination lifetime'

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Author: Grafiati

Published: 4 June 2021

Last updated: 30 January 2023

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1

CERBANIC, GEORGETA, IOAN BURDA, and SIMION SIMON. "RECOMBINATION PARAMETERS OF CdxI1-xSe EPITAXIAL LAYERS FROM THE PHOTOCONDUCTIVE EFFECT." Modern Physics Letters B 15, no. 27 (November 20, 2001): 1225–30. http://dx.doi.org/10.1142/s0217984901003135.

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The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The study of recombination kinetics and lifetime values in CdSe epitaxial layers is the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapor epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by photoconductive frequency-resolved spectroscopy (PCFRS), a usual method for such measurements. The lifetime spectra obtained show in all studied samples the presence of three types of recombinations: τ1 is due to band-to-band recombination, τ2 to surface recombination associated with chemical impurities and τ3 to surface recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.

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2

Chung, Gil Yong, Mark J. Loboda, M. J. Marinella, D. K. Schroder, Paul B. Klein, Tamara Isaacs-Smith, and J. W. Williams. "Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers." Materials Science Forum 600-603 (September 2008): 485–88. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.485.

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Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.

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3

Sun, Jian Wu, Satoshi Kamiyama, Rositza Yakimova, and Mikael Syväjärvi. "Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers." Materials Science Forum 740-742 (January 2013): 490–93. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.490.

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Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 μm while it stays almost constant in layers thicker than 200 μm. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 μm while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 μm. In samples with varying thicknesses, a bulk lifetime = 2.93 μs and carrier diffusion coefficient D= 2.87 cm2/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.

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4

Chung, Gil Yong, Mark J. Loboda, Mike F. MacMillan, and Jian Wei Wan. "Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers." Materials Science Forum 615-617 (March 2009): 287–90. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.287.

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Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.

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5

Terada, Yasuhiko, Shoji Yoshida, Osamu Takeuchi, and Hidemi Shigekawa. "Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs." Advances in Optical Technologies 2011 (November 22, 2011): 1–9. http://dx.doi.org/10.1155/2011/510186.

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We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs)/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM). With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0 ps and GaAs of 4.8 ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0 ps) in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50 nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail.

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6

Chung, Gil Yong, Mark J. Loboda, M. J. Marninella, D. K. Schroder, Tamara Isaacs-Smith, and John R. Williams. "Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers." Materials Science Forum 615-617 (March 2009): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.283.

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The pulsed MOS-C (Metal Oxide Semiconductor-Capacitor) technique was used to measure generation lifetimes in 4H-SiC epitaxial wafers. The ratio of generation to recombination lifetime has been investigated to understand the dominant defect for generation lifetime. The EH6/7 defect level is considered to limit generation lifetime and field enhanced emission is proposed to explain extremely large variation of generation lifetime in a small area. Generation lifetime is limited by dislocations when they are above a threshold density of about 106cm-2. Generation lifetimes measured on 4 and 8 degree off-cut angle epi-substrates are very comparable.

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7

Chung, Gil Yong, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, and Darren M. Hansen. "Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers." Materials Science Forum 556-557 (September 2007): 323–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.323.

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Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay compromised of surface and bulk recombination curves have fast and slow components. Measured lifetimes are not changed with various surface passivation techniques. High resolution lifetime maps show good correlation with stress birefringence images and lower lifetime around extended material defects like grainboundaries, defect clusters, edge defects and polytype switching bands. Chlorosilane based CVD epiwafers show higher bulk lifetime values than standard silane based CVD materials due to less bulk lifetime defect density.

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8

Hooper, I. R., E. Khorani, X. Romain, L. E. Barr, T. Niewelt, S. Saxena, A. Wratten, N. E. Grant, J. D. Murphy, and E. Hendry. "Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators." Journal of Applied Physics 132, no. 23 (December 21, 2022): 233102. http://dx.doi.org/10.1063/5.0128234.

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For a diverse range of semiconductor devices, the charge carrier lifetime is an essential characteristic. However, the carrier lifetime is difficult to control, as it is usually determined by a variety of recombination processes. For indirect bandgap materials, it is well known that effective carrier lifetimes can be improved by passivating the surface, effectively extinguishing surface-related recombination processes. However, for some applications, such as photomodulators for sub-infrared radiation, it is beneficial to tailor lifetimes to specific values, in this particular case trading off between photo-efficiency and switching speed. In this paper, we design a new type of silicon-based metamaterial with a tunable electron–hole lifetime. By periodically patterning a dielectric surface passivation layer, we create a metamaterial whereby the filling fraction of passivated relative to unpassivated areas dictates the effective charge carrier lifetime. We demonstrate tunable lifetimes between 200 μs and 8 ms in a 670 μm thick Si wafer, though in principle our approach allows one to generate any lifetime between the fully passivated and unpassivated limits of a bulk semiconductor. Finally, we investigate the application of these metamaterials as photomodulators, finding switching times that depend upon both the photoexcitation intensity, wafer thickness, and the carrier lifetime.

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9

Klein, Paul B. "Long Carrier Lifetimes in n-Type 4H-SiC Epilayers." Materials Science Forum 717-720 (May 2012): 279–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.279.

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Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially available, very high voltage and high power solid state switching diodes. For the range > several kV, vertical bipolar structures are required with drift layers exhibiting carrier lifetimes ≥ several µsec. Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a decade. Historically, the short lifetimes in early epitaxial layers (a few hundred nsec) were eventually identified with the Vc-related Z1/2 lifetime killer. Current strategies to minimize this defect are an essential ingredient in the procedure for obtaining long-lifetime material. In order to optimize the attainable lifetimes, it has been shown that in addition to low Z1/2 levels, very thick layers are required to minimize the effects of recombination in the substrate and surface passivation is also necessary to minimize surface recombination (S < 1000 cm/sec).

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10

Hwang, J. M., D. K. Schroder, and A. M. Goodman. "Recombination lifetime in oxygen-precipitated silicon." IEEE Electron Device Letters 7, no. 3 (March 1986): 172–74. http://dx.doi.org/10.1109/edl.1986.26334.

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11

AHRENKIEL, R., D. LEVI, and J. ARCH. "Recombination lifetime studies of silicon spheres." Solar Energy Materials and Solar Cells 41-42 (June 1996): 171–81. http://dx.doi.org/10.1016/0927-0248(95)00130-1.

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12

Chung, Gil Yong, Mark J. Loboda, Siddarth G. Sundaresan, and Ranbir Singh. "Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes." Materials Science Forum 645-648 (April 2010): 905–8. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.905.

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Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of fully processed PiN diodes. Measured carrier lifetime and of PiN diodes also show good spatial correlation. Wafer level lifetime mapping can be employed to assess and predict of PiN diodes.

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13

Murphy, John D., Karsten Bothe, Rafael Krain, Massimiliano Olmo, Vladimir V. Voronkov, and Robert J. Falster. "Recombination at Oxide Precipitates in Silicon." Solid State Phenomena 178-179 (August 2011): 205–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.205.

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Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. Precipitation treatments were varied to produce a matrix of samples, which were then characterised by chemical etching and transmission electron microscopy to determine the density and morphology of the precipitates. The lifetime component associated with the precipitates was isolated by preventing or factoring out the effects of other known recombination mechanisms. The lifetime component due to unstrained precipitates could be extremely high (up to ~4.5ms). Recombination at unstrained precipitates was found to be weak, with a capture coefficient of ~8 x 10-8cm3s-1at an injection level equal to half the doping level. Strained precipitates and defects associated with them (dislocations and stacking faults) act as much stronger recombination centres with a capture coefficient of ~3 x 10-6cm3s-1at the same level of injection. The lifetime associated with strained precipitates increases with temperature with a ~0.18eV activation energy over the room temperature to 140°C range. The shape of the injection level dependence of lifetime was similar for all the specimens studied, with the magnitude of the lifetime being dependent on the precipitate density, strain state and temperature, but independent of precipitate size.

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14

Bonilla, Ruy S., George Martins, and Peter R. Wilshaw. "Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si." Solid State Phenomena 242 (October 2015): 73–79. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.73.

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An investigation of the parasitic surface recombination mechanisms in high-lifetime oxidized n-Si is presented. An approximate analytical expression describing recombination at the edge of square shaped specimens is derived. This shows that edge recombination can have a significant effect on the effective lifetime as measured using the transient photo-conductance technique and that for well passivated high quality material edge recombination can be the dominant mechanism in reducing the effective lifetime below the intrinsic level. For 3 x 3 cm2 pieces of silicon measured using a Sinton photo-conductance lifetime instrument, it is shown that recombination at the edge of the sample results in an additional component to the measured lifetime of around 16 ms at an injection level of 1015 cm-3. When this effect is taken into account measurements of 1 Ωcm FZ-Si show that a SRV as low as 1.5 cm/s is possible when the surface is passivated using a corona charge concentration of +2.2 x 1012 q/cm2 deposited on a 100 nm oxide layer.

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15

Klein, Paul B., Joshua D. Caldwell, Amitesh Shrivastava, and Tangali S. Sudarshan. "Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers." Materials Science Forum 600-603 (September 2008): 489–92. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.489.

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The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n- 4H-SiC epilayers are investigated. For three optical measurement techniques, it is shown that the high and low injection lifetimes can vary dramatically. Differences in the lifetime for varying injection level and temperature are approached both experimentally and via carrier dynamics simulations, assuming Z1/Z2 as the dominant defect. Reasonable agreement between measured and calculated behavior is obtained, as is insight into the recombination kinetics associated with the lifetime limiting defect.

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16

Strel'chuk, Anatoly M., Evgenia V. Kalinina, Andrey O. Konstantinov, and Anders Hallén. "Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures." Materials Science Forum 483-485 (May 2005): 993–96. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.993.

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The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x106 rad) and 1 MeV neutrons in the doses range from 1.2x1014 cm-2 to 6.24x1014 cm-2. Neutron irradiation with a dose 1.2x1014 cm-2 increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hnmax » 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x1014 cm-2) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

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17

Polignano, Maria Luisa, Isabella Mica, Agostino Brambilla, Claudio Brambilla, Simona Brambilla, Monica Ceresoli, Davide Codegoni, Laura Farini, and Francesco Somaini. "Detection and Prevention of Palladium Contamination in Silicon Devices." Solid State Phenomena 242 (October 2015): 252–57. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.252.

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In this work we report the results of a set of experiments carried out to assess the ability of recombination lifetime measurements for the detection of palladium contamination in silicon. Palladium is found to be a very effective recombination center, so recombination lifetime measurements are a very sensitive method to detect palladium in silicon. The surface segregation of palladium was monitored by the reduction of its recombination activity in the silicon volume. The palladium segregation at the wafer surface was checked by selective etching, and by Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) analysis.After validating recombination lifetime measurements for palladium detection, we use these measurements to define suitable approaches to the prevention of palladium contamination of silicon devices. The efficiency of a diffusion barrier layer (silicon nitride) and of decontamination by wet cleaning are tested.

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18

Matsushita, Yoshinori, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima. "Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method." Materials Science Forum 645-648 (April 2010): 207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.207.

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We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave photoconductivity decay (-PCD) method. The carrier lifetime becomes longer with excitation density for the as-grown epilayer. This dependence suggests that e ≥h for the dominant recombination center, where e andh are capture cross sections for electrons and holes, respectively. In contrast, the carrier lifetime does not depend on the excitation density for the sample irradiated with electrons at an energy of 160 keV and a dose of 1×1017 cm-2. This may be due to the fact that recombination centers with e <<h were introduced by the electron irradiation or due to the fact that the acceptor concentration was decreased significantly by the irradiation.

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19

Bothra, S., S. Tyagi, S. K. Ghandhi, and J. M. Borrego. "Surface recombination velocity and lifetime in InP." Solid-State Electronics 34, no. 1 (January 1991): 47–50. http://dx.doi.org/10.1016/0038-1101(91)90199-9.

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20

Youngdale, E. R. "Recombination lifetime in InAs–Ga1−xInxSb superlattices." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 2 (March 1994): 1129. http://dx.doi.org/10.1116/1.587064.

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21

Giesecke, J. A., and W. Warta. "Understanding carrier lifetime measurements at nonuniform recombination." Applied Physics Letters 104, no. 8 (February 24, 2014): 082103. http://dx.doi.org/10.1063/1.4864789.

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22

Janssen, Gaby J. M., Yu Wu, Kees C. J. J. Tool, Ingrid G. Romijn, and Andreas Fell. "Extraction of Recombination Properties from Lifetime Data." Energy Procedia 92 (August 2016): 88–95. http://dx.doi.org/10.1016/j.egypro.2016.07.034.

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23

Klein, Paul B., Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Charles R. Eddy, D. Kurt Gaskill, Amitesh Shrivastava, and Tangali S. Sudarshan. "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers." Materials Science Forum 645-648 (April 2010): 203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.203.

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The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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24

Дворецкий, С. А., М. Ф. Ступак, Н. Н. Михайлов, В. С. Варавин, В. Г. Ремесник, С. Н. Макаров, А. Г. Елесин, and А. Г. Верхогляд. "Новые центры рекомбинации в слоях КРТ МЛЭ на подложках (013) GaAs." Физика твердого тела 65, no. 1 (2023): 56. http://dx.doi.org/10.21883/ftt.2023.01.53923.466.

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A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination.

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25

Grant, Nicholas E., Fiacre E. Rougieux, and Daniel Macdonald. "Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers." Solid State Phenomena 242 (October 2015): 120–25. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.120.

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We investigate the recombination activity of a bulk silicon defect limiting the lifetime of high qualityn-type float-zone (FZ) silicon wafers. By isochronal annealing between 200 and 1100 °C, a defect was found to become activated upon annealing at 450–700 °C, causing an order of magnitude reduction in the bulk lifetime. From photoluminescence imaging, it was evident that recombination active circular patterns were present in these low lifetime samples, suggesting the defect (s) originates from the growth conditions of the ingot. When the samples were passivated by SiNx:H films, a substantial improvement in the bulk lifetime resulted, which we postulate occurred due to hydrogenation of the bulk defects. In contrast, when the samples were annealed at high temperatures (800–1100 °C), the circular recombination active patterns were removed, and the bulk lifetime improved, with the highest lifetime achieved at an annealing temperature of 1100 °C. The experimental results suggest that the defect limiting the lifetime in this FZ material is related to a lattice-impurity defect, which can be permanently annihilated upon annealing at >1100 °C.

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26

Hettler, Cameron, William W. Sullivan III, and James Dickens. "Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches." Materials Science Forum 717-720 (May 2012): 301–4. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.301.

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Annealing of high purity semi-insulating (HPSI) 4H-SiC is investigated as a method to improve bulk photoconductive semiconductor switches through recombination lifetime modification. Five samples of HPSI 4H-SiC were annealed at 1810 °C for lengths of time ranging from 3 to 300 minutes. The recombination lifetime of the unannealed and annealed samples was measured using a contactless microwave photoconductivity decay (MPCD) system. The MPCD system consists of a 35 GHz continuous microwave probe and a tripled Nd:YAG pulsed laser. The recombination lifetime was increased from 6 ns, as received, up to 185 ns by annealing for 300 minutes. To experimentally verify switch improvements, identical switches from unannealed and annealed material were fabricated and tested at low voltage. The unannealed device generated a 15 ns pulse with a 2 ns rise-time. The annealed device conducted for upwards of 300 ns with a comparable 2 ns rise-time. The increased recombination lifetime resulted in lower on-state resistance and increased energy transfer.

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27

Babaev, Anton A., Anastasiia V. Sokolova, Sergei A. Cherevkov, Kevin Berwick, Alexander V. Baranov, Anatoly V. Fedorov, and Aleksandr P. Litvin. "Beyond Charge Transfer: The Impact of Auger Recombination and FRET on PL Quenching in an rGO-QDs System." Nanomaterials 11, no. 6 (June 21, 2021): 1623. http://dx.doi.org/10.3390/nano11061623.

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PL intensity quenching and the PL lifetime reduction of fluorophores located close to graphene derivatives are generally explained by charge and energy transfer processes. Analyzing the PL from PbS QDs in rGO/QD systems, we observed a substantial reduction in average PL lifetimes with an increase in rGO content that cannot be interpreted solely by these two processes. To explain the PL lifetime dependence on the rGO/QD component ratio, we propose a model based on the Auger recombination of excitations involving excess holes left in the QDs after the charge transfer process. To validate the model, we conducted additional experiments involving the external engineering of free charge carriers, which confirmed the role of excess holes as the main QD PL quenching source. A mathematical simulation of the model demonstrated that the energy transfer between neighboring QDs must also be considered to explain the experimental data carefully. Together, Auger recombination and energy transfer simulation offers us an excellent fit for the average PL lifetime dependence on the component ratio of the rGO/QD system.

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28

CONNELLY, BLAIR C., GRACE D. METCALFE, PAUL H. SHEN, and MICHAEL WRABACK. "TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 541–48. http://dx.doi.org/10.1142/s0129156411006830.

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We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

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29

Murphy, J. D., N. E. Grant, S. L. Pain, T. Niewelt, A. Wratten, E. Khorani, V. P. Markevich, et al. "Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy." Journal of Applied Physics 132, no. 6 (August 14, 2022): 065704. http://dx.doi.org/10.1063/5.0099492.

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Photoexcited muon spin spectroscopy (photo- μSR) is used to study excess charge carrier lifetimes in silicon. Experiments are performed on silicon wafers with very high bulk lifetimes with the surface passivation conditions intentionally modified to control the effective lifetime. When the effective lifetime is low (<500 μs), implanting the muons to different depths enables the reliable measurement of carrier lifetime as a function of distance from a surface. It is also demonstrated that the photo- μSR technique can measure effective carrier lifetimes in completed commercial gallium doped silicon passivated emitter and rear cell devices, with results validated with harmonically modulated photoluminescence imaging. It is discovered, however, that prolonged muon irradiation of samples with very long effective lifetimes (>10 ms) results in detectable degradation of the measured lifetime. Re-passivation of degraded samples with a temporary room temperature superacid-based passivation scheme demonstrates that degradation occurs in the silicon bulk. Deep-level transient spectroscopy measurements reveal the existence of several defect-related traps near the muon-exposed surface in concentrations of order 1010 cm−3 that are not present near the surface not exposed to muons. In contrast to the common perception of the μSR technique, our results demonstrate that muons are not inert probes and that beam-induced recombination activity modifies the bulk lifetime significantly in samples with high effective carrier lifetimes.

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30

Fukuhara, Tomohiro, Yasunari Tamai, and Hideo Ohkita. "Nongeminate charge recombination in organic photovoltaics." Sustainable Energy & Fuels 4, no. 9 (2020): 4321–51. http://dx.doi.org/10.1039/d0se00310g.

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31

Chin, Pik Yee, Zainal Abidin Talib, Wan Mahmood Mat Yunus, Josephine Liew Ying Chyi, Nordin Sabli, and Chang Chung Bin. "Annealing Effect on Photoacoustic Characterization of NiSe Metal Chalcogenide Semiconductor Using Phase Signal Analysis." Advanced Materials Research 1107 (June 2015): 526–29. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.526.

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Nickel selenide (NiSe) has been synthesized by solid state method and annealed at five different temperatures, ranging from 323 K to 823 K. The annealing effect on NiSe thermal and carrier transport properties were investigated by using open-cell photoacoustic technique. From analysis of its phase signal-frequency, thermal diffusivity, carrier diffusion coefficient, surface recombination velocity and recombination lifetime of the NiSe was determined. The results show that with increasing of the annealing temperature of NiSe sample, the thermal diffusivity and the carrier diffusion coefficient increased. The surface recombination velocity was decreasing as the annealing temperature of the sample increased. The increasing of annealing temperature of the sample also affected the trend of band-to-band recombination lifetime.

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32

Elhami Khorasani, Arash, Dieter K. Schroder, and T. L. Alford. "Optically Excited MOS-Capacitor for Recombination Lifetime Measurement." IEEE Electron Device Letters 35, no. 10 (October 2014): 986–88. http://dx.doi.org/10.1109/led.2014.2345058.

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33

Pivrikas, Almantas, Bronson Philippa, Ronald D. White, and Gytis Juska. "Photocarrier lifetime and recombination losses in photovoltaic systems." Nature Photonics 10, no. 5 (April 28, 2016): 282–83. http://dx.doi.org/10.1038/nphoton.2016.78.

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Kobeleva, S. P., I. M. Anfimov, and I. V. Schemerov. "A device for free-carrier recombination lifetime measurements." Instruments and Experimental Techniques 59, no. 3 (May 2016): 420–24. http://dx.doi.org/10.1134/s0020441216030064.

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35

Ahrenkiel, R. "Recombination processes and lifetime measurements in silicon photovoltaics." Solar Energy Materials and Solar Cells 76, no. 3 (March 31, 2003): 243–56. http://dx.doi.org/10.1016/s0927-0248(02)00277-5.

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36

Ahrenkiel, R. K., and Steven Johnston. "Contactless measurement of recombination lifetime in photovoltaic materials." Solar Energy Materials and Solar Cells 55, no. 1-2 (July 1998): 59–73. http://dx.doi.org/10.1016/s0927-0248(98)00047-6.

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37

Schroder, D. K., B. D. Choi, S. G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, and J. Benton. "Silicon epitaxial layer recombination and generation lifetime characterization." IEEE Transactions on Electron Devices 50, no. 4 (April 2003): 906–12. http://dx.doi.org/10.1109/ted.2003.812488.

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38

Abbarchi, M., M. Gurioli, S. Sanguinetti, M. Zamfirescu, A. Vinattieri, and N. Koguchi. "Recombination lifetime of single GaAs/AlGaAs quantum dots." physica status solidi (c) 3, no. 11 (December 2006): 3860–63. http://dx.doi.org/10.1002/pssc.200671578.

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39

Miyazawa, Tetsuya, Takeshi Tawara, and Hidekazu Tsuchida. "Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping." Materials Science Forum 897 (May 2017): 51–54. http://dx.doi.org/10.4028/www.scientific.net/msf.897.51.

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An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source. A room temperature photoluminescence spectrum of a N-and B-doped epilayer showed a broad B-related peak at 2.37 eV instead of a band-edge luminescence, which indicates that the carrier recombination path was changed by the B doping. The minority carrier lifetime decreased (< 30 ns at 250°C) with increasing B doping concentration. The thermal stability of the short carrier lifetime was compared with a conventional carrier lifetime reduction method, namely an electron irradiation technique. After thermal annealing at 1700°C, the carrier lifetime of the electron irradiated epilayer recovered while that of the B-doped epilayer remained, indicating that the carrier lifetime controlled by the B doping technique was more stable against the thermal processes.

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40

Pengchan, W., Toempong Phetchakul, and Amporn Poyai. "Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics." Advanced Materials Research 378-379 (October 2011): 593–96. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.593.

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This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.

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41

Chevallier, T., A. Benayad, G. Le Blevennec, and F. Chandezon. "Method to determine radiative and non-radiative defects applied to AgInS2–ZnS luminescent nanocrystals." Physical Chemistry Chemical Physics 19, no. 3 (2017): 2359–63. http://dx.doi.org/10.1039/c6cp06509k.

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The systematic measurement of the photoluminescence quantum yield and the recombination lifetime of a given phosphor allows for the quantification of both radiative and non-radiative recombination rates.

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42

Kolesnikova, Irina A., Daniil A. Kobtsev, Ruslan A. Redkin, Vladimir I. Voevodin, Anton V. Tyazhev, Oleg P. Tolbanov, Yury S. Sarkisov, Sergey Yu Sarkisov, and Victor V. Atuchin. "Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes." Photonics 8, no. 12 (December 13, 2021): 575. http://dx.doi.org/10.3390/photonics8120575.

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The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.

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Savin, Hele, Marko Yli-Koski, Antti Haarahiltunen, H. Talvitie, and Juha Sinkkonen. "Detection of Nickel in Silicon by Recombination Lifetime Measurements." Solid State Phenomena 131-133 (October 2007): 183–88. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.183.

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The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

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44

Boulfrad, Yacine, Gaute Stokkan, Mohammed M'Hamdi, Eivind Øvrelid, and Lars Arnberg. "Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot." Solid State Phenomena 178-179 (August 2011): 507–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.507.

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Lifetime distribution of a multicrystalline silicon ingot of 250 mm diameter and 100 mm height, grown by unidirectional solidification has been modeled. The model computes the combined effect of interstitial iron and dislocation distribution on minority carrier lifetime of the ingot based on Shockley Read Hall (SRH) recombination model for iron point defects and Donolato’s model for recombination on dislocations. The iron distribution model was based on the solid state diffusion of iron from the crucible and coating to the ingot during its solidification and cooling, taking into account segregation of iron to the melt and back diffusion after the end of solidification. Dislocation density distribution is determined from experimental data obtained by PVScan analysis from a vertical cross section slice. Calculated lifetime is fitted to the measured one by fitting parameters relating the recombination strength and the local concentration of iron

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45

Galeckas, Augustinas, Hussein M. Ayedh, J. Peder Bergman, and Bengt Gunnar Svensson. "Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination." Materials Science Forum 897 (May 2017): 258–61. http://dx.doi.org/10.4028/www.scientific.net/msf.897.258.

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We address the key factors limiting charge carrier lifetime in 4H-SiC epilayers by demonstrating a viable method for eliminating carbon vacancy (VC) related Z1/2 lifetime killer sites and by introducing a novel approach in depth-resolved characterization of the carrier lifetimes across the epitaxial layer, which allows monitoring the efficacy of the proposed defect reduction scheme also exposing surface and interface recombination effects. We show that a moderate-temperature annealing conducted at 1500 °C for 6 hours under C-rich thermodynamic equilibrium conditions in effect eliminates carbon vacancies in epilayers to the levels below the detection limit (1011 cm-3) of DLTS measurements. The efficient reduction of VC-related Z1/2 sites upon thermal treatment is further proven by a significant increase of the minority carrier lifetime from 0.3µs to 1 µs, the upper limit apparently set by epilayer thickness dependent lifetime. Equally important is the extensive range of defect elimination as evidenced by consistently enhanced lifetime throughout entire 40 μm-thick epilayer, thus suggesting immediate practical implication as a lifetime control method suitable for variable thickness 4H-SiC epilayers.

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Mori, Yuto, Masashi Kato, and Masaya Ichimura. "Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes." Materials Science Forum 778-780 (February 2014): 432–35. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.432.

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We evaluated the carrier lifetime to estimate surface recombination velocities for 4H-SiC whose surfaces were treated by various processes. We found that the reactive ion etching (RIE) increased the surface recombination velocity, and we considered that point defects introduced by RIE influence the surface recombination velocity.

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47

Hirokawa, Soichi, Griffin Chure, Nathan M. Belliveau, Geoffrey A. Lovely, Michael Anaya, David G. Schatz, David Baltimore, and Rob Phillips. "Sequence-dependent dynamics of synthetic and endogenous RSSs in V(D)J recombination." Nucleic Acids Research 48, no. 12 (May 25, 2020): 6726–39. http://dx.doi.org/10.1093/nar/gkaa418.

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Abstract Developing lymphocytes of jawed vertebrates cleave and combine distinct gene segments to assemble antigen–receptor genes. This process called V(D)J recombination that involves the RAG recombinase binding and cutting recombination signal sequences (RSSs) composed of conserved heptamer and nonamer sequences flanking less well-conserved 12- or 23-bp spacers. Little quantitative information is known about the contributions of individual RSS positions over the course of the RAG–RSS interaction. We employ a single-molecule method known as tethered particle motion to track the formation, lifetime and cleavage of individual RAG–12RSS–23RSS paired complexes (PCs) for numerous synthetic and endogenous 12RSSs. We reveal that single-bp changes, including in the 12RSS spacer, can significantly and selectively alter PC formation or the probability of RAG-mediated cleavage in the PC. We find that some rarely used endogenous gene segments can be mapped directly to poor RAG binding on their adjacent 12RSSs. Finally, we find that while abrogating RSS nicking with Ca2+ leads to substantially shorter PC lifetimes, analysis of the complete lifetime distributions of any 12RSS even on this reduced system reveals that the process of exiting the PC involves unidentified molecular details whose involvement in RAG–RSS dynamics are crucial to quantitatively capture kinetics in V(D)J recombination.

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48

Arguirov, Tzanimir, Teimuraz Mchedlidze, Manfred Reiche, and Martin Kittler. "Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing." Solid State Phenomena 156-158 (October 2009): 579–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.579.

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Incorporation of optical components into microelectronic devices will significantly improve their performance. Absence of effective Si-based light emitter hampers such integration. In the present work light emitting Si diodes, fabricated by dopant (boron or phosphorous) implantation and annealing are investigated. Different implantation doses and annealing temperatures were employed. The efficiency of the electroluminescence (EL), obtained from such structures was measured and correlated with the fabrication process parameters. As previously reported, the EL of band-to-band radiative transition in Si is strongly influenced, by the dopant implantation dose, i.e. higher doses usually enhance EL. Our results suggest that the effect is mainly related to the increase of minority carrier lifetime in the substrate. Distinct measurements showed that the higher implantation doses lead longer carrier lifetimes in the samples. The correlation between lifetime and the EL efficiency could be satisfactory explained in the frame of a classical model, considering the carrier-injection dependence of the rates of the three main recombination mechanisms in silicon, i.e. multi-phonon, radiative and Auger recombination. We suppose that the increase in the implantation dose improves minority carrier lifetime due to the gettering of impurity atoms from the substrate material to the highly doped emitter region.

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49

Jin, En Mei, Kyung-Hee Park, Ju-Young Park, Jae-Wook Lee, Soon-Ho Yim, Xing Guan Zhao, Hal-Bon Gu, Sung-Young Cho, John Gerard Fisher, and Tae-Young Kim. "Preparation and Characterization of Chitosan Binder-Based Electrode for Dye-Sensitized Solar Cells." International Journal of Photoenergy 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/296314.

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A chitosan binder-based TiO2photoelectrode is used in dye-sensitized solar cells (DSSCs). Field-emission scanning electron microscope (FE-SEM) images revealed that the grain size, thickness, and distribution of TiO2films are affected by the chitosan content. With addition of 2.0 wt% chitosan to the TiO2film (D2), the surface pore size became the smallest, and the pores were fairly evenly distributed. The electron transit time, electron recombination lifetime, diffusion coefficient, and diffusion length were analyzed by IMVS and IMPS. The best DSSC, with 2.0 wt% chitosan addition to the TiO2film, had a shorter electron transit time, longer electron recombination lifetime, and larger diffusion coefficient and diffusion length than the other samples. The results of 2.0 wt% chitosan-added TiO2DSSCs are an electron transit time of s, electron recombination lifetime of s, diffusion coefficient of cm2s−1, diffusion length of 14.81 μm, and a solar conversion efficiency of 4.18%.

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50

TRITA, A., I. CRISTIANI, V. DEGIORGIO, M. DÖBELI, D. CHRASTINA, and H. VON KÄNEL. "MEASUREMENT OF THE LIFETIME OF PHOTO-GENERATED FREE CARRIERS IN SiGe WAVEGUIDES." Journal of Nonlinear Optical Physics & Materials 16, no. 02 (June 2007): 207–16. http://dx.doi.org/10.1142/s0218863507003718.

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The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 μm probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s.

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