Dissertations / Theses on the topic 'Recombination lifetime'
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Macdonald, Daniel Harold, and daniel@faceng anu edu au. "Recombination and Trapping in Multicrystalline Silicon Solar Cells." The Australian National University. Faculty of Engineering and Information Technology, 2001. http://thesis.anu.edu.au./public/adt-ANU20011218.134830.
Full textErdman, Emily Clare. "Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212.
Full textPang, Shu Koon. "Investigation of recombination lifetime and defects in magnetic czochralski silicon for high efficiency solar cells." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/13554.
Full textAytac, Yigit. "Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices." Diss., University of Iowa, 2016. https://ir.uiowa.edu/etd/2039.
Full textMoen, Kurt Andrew. "Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26642.
Full textCommittee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Ringel, Brett Logan. "Investigation of Mesa Etched Antimonide Detectors Using Time Resolved Microwave Reflectance." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1589153635130203.
Full textČeponis, Tomas. "Radiacinės Si prietaisų parametrų optimizavimo ir radiacinių defektų kontrolės technologijos." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20121001_093138-74555.
Full textIn high energy physics experiments the semiconductor particle detectors of pin structure are commonly employed for tracking of the ionising particles. However, ionising radiation creates defects and consequently affects the parameters of particle detectors. Therefore, it is necessary to characterize irradiated detectors and search for the new approaches on how to suppress or control the degradation process. Measurements of current-voltage, capacitance-voltage characteristics as well as deep level transient spectroscopy, thermally stimulated currents spectroscopy are employed for the characterization of irradiated particle detectors. At high irradiation fluences when defects concentration exceeds that of dopants, a generation current increases and, thus, the above mentioned techniques can not be applied for the correct evaluation of defect parameters. In this work, models describing displacement currents in detectors due to redistribution of electric field determined by variations of external voltage or a moving charge in electric field are discussed. These models were applied for creation of the advanced techniques which allow evaluating of charge transport, trapping and recombination/generation parameters in heavily irradiated detectors after irradiation. These techniques were applied for the spectroscopy of deep levels associated with defects, for cross-sectional scans within layered junction structures as well as for examination of defects evolution during irradiation. In... [to full text]
Čeponis, Tomas. "Radiation technologies for optimization of Si device parameters and techniques for control of radiation defects." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20121001_093158-64168.
Full textAukštųjų energijų fizikos eksperimentuose plačiai taikomi puslaidininkiniai pin struktūros dalelių detektoriai jonizuojančiosioms dalelėms registruoti. Radiacinė spinduliuotė sukuria defektus medžiagoje ir neigiamai įtakoja detektorių parametrus, todėl būtina charakterizuoti apšvitintus detektorius ieškant būdų, kaip juos patobulinti. Apšvitintų detektorių charakterizavimui taikomi volt-amperinių, volt-faradinių būdingųjų dydžių matavimai ir analizė, giliųjų lygmenų talpinė bei šiluma skatinamų srovių spektroskopija. Tačiau stipriai apšvitintuose detektoriuose, kai defektų koncentracija viršija legirantų koncentraciją bei išauga nuotėkio srovė, šie metodai negali būti taikomi siekiant korektiškai įvertinti radiacinių defektų parametrus. Šiame darbe buvo sukurti modeliai, apibūdinantys slinkties sroves, tekančias detektoriuje dėl elektrinio lauko persiskirstymo keičiantis išorinei įtampai arba elektriniame lauke judant injektuotam krūviui. Šie modeliai buvo pritaikyti naujų metodikų sukūrimui, kurios įgalina įvertinti krūvio pernašos, pagavimo, rekombinacijos/generacijos parametrus stipriai apšvitintuose detektoriuose po apšvitos. Sukurti metodai buvo pritaikyti defektų spektroskopijai ir skersinei žvalgai sluoksninėse struktūrose bei defektų evoliucijos tyrimams apšvitos metu. Disertacijoje pateikti ir aptarti apšvitintų detektorių ir apšvitos metu pasireiškiančios parametrų kaitos rezultatai. Elektronikos grandynuose plačiai naudojami galios pin struktūros diodai, kurie... [toliau žr. visą tekstą]
林, 利彦. "高耐圧パワー半導体素子を目指したp型SiC結晶のキャリア寿命に関する研究." 京都大学 (Kyoto University), 2013. http://hdl.handle.net/2433/174947.
Full textMarinado, Tannia. "Photoelectrochemical studies of dye-sensitized solar cells using organic dyes." Doctoral thesis, Stockholm : Skolan för kemivetenskap,Kungliga Tekniska högskolan, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-11248.
Full textYang, Lei. "Hole Transport Materials for Solid-State Mesoscopic Solar Cells." Doctoral thesis, Uppsala universitet, Fysikalisk kemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-232271.
Full textHégr, Ondřej. "Charakterizace nanostruktur deponovaných vysokofrekvenčním magnetronovým naprašováním." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233428.
Full textGhosh, Michael. "Defekte im Bodenbereich blockerstarrten Solar-Siliziums." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2010. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-38493.
Full textMüllhäuser, Jochen R. "Properties of Zincblende GaN and (In,Ga,Al)N Heterostructures grown by Molecular Beam Epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 1999. http://dx.doi.org/10.18452/14382.
Full textWhile the earliest report on wurtzite (alpha) GaN dates back to 1932, it was not until 1989 that the first epitaxial layer of metastable zincblende (eta) GaN has been synthesized by molecular beam epitaxy (MBE) on a 3C-SiC substrate. The present work focuses on radio frequency (RF) plasma-assisted MBE growth, microstructure, and optical properties of the eta-(In,Ga,Al)N material system on GaAs(001). Due to their higher crystal symmetry, these cubic nitrides are expected to be intrinsically superior for (opto-) electronic applications than the widely employed wurtzite counterparts. Owing to the difficulties of obtaining single-phase crystals, many important material constants are essentially unknown for the cubic nitrides. The aim of this work is therefore, first, to push the technological limits of synthesizing device-relevant zincblende (In,Ga,Al)N heterostructures and, second, to determine the basic optical and electronic properties of GaN as well as to investigate the hardly explored alloy InGaN. An optimized MBE growth process is presented which allows not only the reproducible nucleation of smooth, monocrystalline GaN layers on GaAs using a high-nitrogen-flow RF plasma source. In particular, thick single-phase GaN layers with smooth surface morphology are obtained being a prerequisite for the synthesis of ternary eta-(Ga,In,Al)N structures. Temperature dependent reflectance and transmittance measurements are carried out on such a GaN film having a RMS surface roughness as little as 1.5 nm. A numerical method is developed which allows to extract from these data the complete set of optical constants for photon energies covering the transparent as well as the strongly absorbing spectral range (2.0 -- 3.8 eV). Inhomogeneities in the refractive index leading to finite coherence effects are quantitatively analyzed by means of Monte Carlo simulations. The fundamental band gap EG(T) of GaN is determined for 5 < T < 300 K and the room temperature density of states is investigated. Systematic studies of the band edge photoluminescence (PL) in terms of transition energies, lineshapes, linewidths, and intensities are carried out for both alpha- and GaN as a function of temperature. Average phonon energies and coupling constants, activation energies for thermal broadening and quenching are determined. Excitation density dependent PL measurements are carried out for both phases in order to study the impact of nonradiative recombination processes at 300 K. A recombination model is applied to estimate the internal quantum efficiency, the (non)radiative lifetimes, as well as the ratio of the electron to hole capture coefficients for both polytypes. It is seen that the dominant nonradiative centers in the n-type material investigated act as hole traps which, however, can be saturated at already modest carrier injection rates. In summary, despite large defect densities in GaN due to highly mismatched heteroepitaxy on GaAs, band edge luminescence is observed up to 500 K with intensities comparable to those of state-of-the-art alpha-GaN. For the first time, thick InGaN films are fabricated on which blue and green luminescence can be observed up to 400 K for x=0.17 and x=0.4, respectively. Apart from bulk-like InGaN films, the first coherently strained InGaN/GaN (multi) quantum wells with In contents as high as 50 % and abrupt interfaces are grown. This achievement shows that a ternary alloy can be synthesized in a metastable crystal structure far beyond the miscibility limit of its binary constituents despite the handicap of highly lattice mismatched heteroepitaxy. The well widths of these structures range between 4 and 7 nm and are thus beyond the theoretically expected critical thickness for the strain values observed. It is to be expected that even higher In contents can be reached for film thicknesses below 5 nm. The potential application of such InGaN/GaN multi quantum wells with x >= 0.4 would thus be diode lasers operating in the green-yellow range. abstract in PostScript
Macdonald, D. "Recombination and Trapping in Multicrystalline Silicon Solar Cells." Phd thesis, 2001. http://hdl.handle.net/1885/47793.
Full textLiu, Jen-Chung, and 劉仁中. "Study of Temperature Dependent Recombination Mechanisms and Carrier Lifetime in Quantum Dots." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/19595639364129563081.
Full text國立臺灣大學
光電工程學研究所
96
In this thesis, we have established a time-resolved system for measuring the carrier lifetimes of quantum dots. Firstly, we have studied the recombination mechanism of quantum dots by using the excitation power dependent photoluminescence measurement. It has been demonstrated that the free-carrier recombination is the dominant mechanism at room temperature. The influence of exciton becomes larger when the temperature is decreased. Then, in order to verify this time-resolved system, a time- correlated single photon counting (TCSPC) system has been established. By comparing the result obtained by TCSPC system, the validity of our time-resolved system is confirmed. Furthermore, we investigated the temperature dependent carrier lifetimes. It has been shown that the carrier lifetime first increases and then decreases with increasing temperature.
Ghosh, Michael. "Defekte im Bodenbereich blockerstarrten Solar-Siliziums: Identifikation, Verteilung und elektrischer Einfluss." Doctoral thesis, 2008. https://tubaf.qucosa.de/id/qucosa%3A22729.
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