Relevant bibliographies by topics / Recombination lifetime

Academic literature on the topic 'Recombination lifetime'

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Published: 4 June 2021
Last updated: 30 January 2023

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Journal articles on the topic "Recombination lifetime"

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CERBANIC, GEORGETA, IOAN BURDA, and SIMION SIMON. "RECOMBINATION PARAMETERS OF CdxI1-xSe EPITAXIAL LAYERS FROM THE PHOTOCONDUCTIVE EFFECT." Modern Physics Letters B 15, no. 27 (November 20, 2001): 1225–30. http://dx.doi.org/10.1142/s0217984901003135.

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The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The study of recombination kinetics and lifetime values in CdSe epitaxial layers is the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapor epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by photoconductive frequency-resolved spectroscopy (PCFRS), a usual method for such measurements. The lifetime spectra obtained show in all studied samples the presence of three types of recombinations: τ1 is due to band-to-band recombination, τ2 to surface recombination associated with chemical impurities and τ3 to surface recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.
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Chung, Gil Yong, Mark J. Loboda, M. J. Marinella, D. K. Schroder, Paul B. Klein, Tamara Isaacs-Smith, and J. W. Williams. "Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers." Materials Science Forum 600-603 (September 2008): 485–88. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.485.

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Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.
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Sun, Jian Wu, Satoshi Kamiyama, Rositza Yakimova, and Mikael Syväjärvi. "Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers." Materials Science Forum 740-742 (January 2013): 490–93. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.490.

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Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 μm while it stays almost constant in layers thicker than 200 μm. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 μm while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 μm. In samples with varying thicknesses, a bulk lifetime = 2.93 μs and carrier diffusion coefficient D= 2.87 cm2/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.
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Chung, Gil Yong, Mark J. Loboda, Mike F. MacMillan, and Jian Wei Wan. "Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers." Materials Science Forum 615-617 (March 2009): 287–90. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.287.

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Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.
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Terada, Yasuhiko, Shoji Yoshida, Osamu Takeuchi, and Hidemi Shigekawa. "Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs." Advances in Optical Technologies 2011 (November 22, 2011): 1–9. http://dx.doi.org/10.1155/2011/510186.

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We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs)/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM). With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0 ps and GaAs of 4.8 ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0 ps) in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50 nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail.
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Chung, Gil Yong, Mark J. Loboda, M. J. Marninella, D. K. Schroder, Tamara Isaacs-Smith, and John R. Williams. "Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers." Materials Science Forum 615-617 (March 2009): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.283.

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The pulsed MOS-C (Metal Oxide Semiconductor-Capacitor) technique was used to measure generation lifetimes in 4H-SiC epitaxial wafers. The ratio of generation to recombination lifetime has been investigated to understand the dominant defect for generation lifetime. The EH6/7 defect level is considered to limit generation lifetime and field enhanced emission is proposed to explain extremely large variation of generation lifetime in a small area. Generation lifetime is limited by dislocations when they are above a threshold density of about 106cm-2. Generation lifetimes measured on 4 and 8 degree off-cut angle epi-substrates are very comparable.
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Chung, Gil Yong, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, and Darren M. Hansen. "Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers." Materials Science Forum 556-557 (September 2007): 323–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.323.

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Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay compromised of surface and bulk recombination curves have fast and slow components. Measured lifetimes are not changed with various surface passivation techniques. High resolution lifetime maps show good correlation with stress birefringence images and lower lifetime around extended material defects like grainboundaries, defect clusters, edge defects and polytype switching bands. Chlorosilane based CVD epiwafers show higher bulk lifetime values than standard silane based CVD materials due to less bulk lifetime defect density.
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Hooper, I. R., E. Khorani, X. Romain, L. E. Barr, T. Niewelt, S. Saxena, A. Wratten, N. E. Grant, J. D. Murphy, and E. Hendry. "Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators." Journal of Applied Physics 132, no. 23 (December 21, 2022): 233102. http://dx.doi.org/10.1063/5.0128234.

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For a diverse range of semiconductor devices, the charge carrier lifetime is an essential characteristic. However, the carrier lifetime is difficult to control, as it is usually determined by a variety of recombination processes. For indirect bandgap materials, it is well known that effective carrier lifetimes can be improved by passivating the surface, effectively extinguishing surface-related recombination processes. However, for some applications, such as photomodulators for sub-infrared radiation, it is beneficial to tailor lifetimes to specific values, in this particular case trading off between photo-efficiency and switching speed. In this paper, we design a new type of silicon-based metamaterial with a tunable electron–hole lifetime. By periodically patterning a dielectric surface passivation layer, we create a metamaterial whereby the filling fraction of passivated relative to unpassivated areas dictates the effective charge carrier lifetime. We demonstrate tunable lifetimes between 200 μs and 8 ms in a 670 μm thick Si wafer, though in principle our approach allows one to generate any lifetime between the fully passivated and unpassivated limits of a bulk semiconductor. Finally, we investigate the application of these metamaterials as photomodulators, finding switching times that depend upon both the photoexcitation intensity, wafer thickness, and the carrier lifetime.
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Klein, Paul B. "Long Carrier Lifetimes in n-Type 4H-SiC Epilayers." Materials Science Forum 717-720 (May 2012): 279–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.279.

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Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially available, very high voltage and high power solid state switching diodes. For the range > several kV, vertical bipolar structures are required with drift layers exhibiting carrier lifetimes ≥ several µsec. Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a decade. Historically, the short lifetimes in early epitaxial layers (a few hundred nsec) were eventually identified with the Vc-related Z1/2 lifetime killer. Current strategies to minimize this defect are an essential ingredient in the procedure for obtaining long-lifetime material. In order to optimize the attainable lifetimes, it has been shown that in addition to low Z1/2 levels, very thick layers are required to minimize the effects of recombination in the substrate and surface passivation is also necessary to minimize surface recombination (S < 1000 cm/sec).
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Hwang, J. M., D. K. Schroder, and A. M. Goodman. "Recombination lifetime in oxygen-precipitated silicon." IEEE Electron Device Letters 7, no. 3 (March 1986): 172–74. http://dx.doi.org/10.1109/edl.1986.26334.

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Dissertations / Theses on the topic "Recombination lifetime"

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Macdonald, Daniel Harold, and daniel@faceng anu edu au. "Recombination and Trapping in Multicrystalline Silicon Solar Cells." The Australian National University. Faculty of Engineering and Information Technology, 2001. http://thesis.anu.edu.au./public/adt-ANU20011218.134830.

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In broad terms, this thesis is concerned with the measurement and interpretation of carrier lifetimes in multicrystalline silicon. An understanding of these lifetimes in turn leads to a clearer picture of the limiting mechanisms in solar cells made with this promising material, and points to possible paths for improvement. The work falls into three broad categories: gettering, trapping and recombination. A further section discusses a powerful new technique for characterising impurities in semiconductors in general, and provides an example of its application. Gettering of recombination centres in multicrystalline silicon wafers improves the bulk lifetime, often considerably. Although not employed deliberately in most commercial cell processes, gettering nevertheless occurs to some extent during emitter formation, and so may have an important impact on cell performance. However, the response of different wafers to gettering is quite variable, and in some cases is non-existent. Work in this thesis shows that the response to gettering is best when the dislocation density is low and the density of mobile impurities is high. For Eurosolare material these conditions prevail at the bottom and to a lesser extent in the middle of an ingot. However, these conclusions can not always be applied to multicrystalline silicon produced by other manufacturers. Low resistivity multicrystalline silicon suffers from a concurrent thermally induced degradation of the lifetime. This had previously been attributed to the dissolution of precipitated metals, although we note that the crystallographic quality also appears to deteriorate. The thermal degradation effect results in an optimum gettering time for low resistivity material. Edge-defined Film-fed Growth (EFG) ribbon silicon was also found to respond to gettering, and even more so to bulk hydrogenation. Evidence for Cu contamination in the as-grown EFG wafers is presented. Multicrystalline silicon is often plagued by trapping effects, which can make lifetime measurement in the injection-level range of interest very difficult, and sometimes impossible. An old model based on centres that trap and release minority carriers, but do not interact with majority carriers, was found to provide a good explanation for these effects. These trapping states were linked with the presence of dislocations and also with boron-impurity complexes. Their annealing behaviour and lack of impact on device parameters can be explained in terms of the models developed. The trapping model allowed a recently proposed method for correcting trap-affected data to be tested using typical values of the trapping parameters. The correction method was found to extend the range of useable data to approximately an order of magnitude lower in terms of carrier density than would be available otherwise, an improvement that could prove useful in many practical cases. High efficiency PERL and PERC cells made on gettered multicrystalline silicon resulted in devices with open circuit voltages in the 640mV range that were almost entirely limited by bulk recombination. Furthermore, the injection-level dependence of the bulk lifetime resulted in decreased fill factors. Modelling showed that these effects are even more pronounced for cells dominated by interstitial iron recombination centres. Analysis of a commercial multicrystalline cell fabrication process revealed that recombination in the emitter created the most stringent limit on the open circuit voltage, followed by the bulk and the rear surface. The fill factors of these commercial cells were mostly affected by series resistance, although some reduction due to injection-level dependent lifetimes seems likely also. Secondary Ion Mass Spectroscopy on gettered layers of multicrystalline silicon revealed the presence of Cr and Fe in considerable quantities. Further evidence strongly implied that they resided almost exclusively as precipitates. More generally, injection-level dependent lifetime measurements offer the prospect of powerful contamination-monitoring tools, provided that the impurities are well characterised in terms of their energy levels and capture cross-sections. Conversely, lifetime measurements can assist with this process of characterising impurities, since they are extremely sensitive to their presence. This possibility is explored in this thesis, and a new technique, dubbed Injection-level Dependent Lifetime Spectroscopy (IDLS) is developed. To test its potential, the method was applied to the well-known case of FeB pairs in boron-doped silicon. The results indicate that the technique can offer much greater accuracy than more conventional DLTS methods, and may find applications in microelectronics as well as photovoltaics.
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Erdman, Emily Clare. "Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212.

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Pang, Shu Koon. "Investigation of recombination lifetime and defects in magnetic czochralski silicon for high efficiency solar cells." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/13554.

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Aytac, Yigit. "Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices." Diss., University of Iowa, 2016. https://ir.uiowa.edu/etd/2039.

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All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as next generation materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential-transmission measurements are used here to demonstrate that "Ga-free" InAs/InAs₁₋xSbx T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements of unintentionally doped MWIR and LWIR InAs/InAs₁₋xSbx T2SLs demonstrate minority carrier (MC) lifetimes of 18.4 µs and 4.5 µs at 77 K, respectively. This represents a more than two order of magnitude increase compared to the 90 ns MC lifetime measured in a comparable MWIR and LWIR InAs/GaSb T2SL. Through temperature-dependent differential-transmission measurements, the various carrier recombination processes are differentiated and the dominant recombination mechanisms identified for InAs/InAs₁₋xSbx T2SLs. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs and potentially bulk Hg₁₋xCdxTe photodetectors. In addition to carrier lifetimes, the drift and diusion of excited charge carriers through the superlattice layers (i.e. in-plane transport) directly aects the performance of photo-detectors and emitters. All-optical ultrafast techniques were successfully used for a direct measure of in-plane diffusion coeffcients in MWIR InAs/InAsSb T2SLs using a photo-generated transient grating technique at various temperatures. Ambipolar diffusion coefficients of approximately 60 cm²/s were reported for MWIR InAs/InAs₁₋xSbxT2SLs at 293 K.
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Moen, Kurt Andrew. "Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26642.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Ringel, Brett Logan. "Investigation of Mesa Etched Antimonide Detectors Using Time Resolved Microwave Reflectance." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1589153635130203.

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Čeponis, Tomas. "Radiacinės Si prietaisų parametrų optimizavimo ir radiacinių defektų kontrolės technologijos." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20121001_093138-74555.

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Aukštųjų energijų fizikos eksperimentuose plačiai taikomi puslaidininkiniai pin struktūros dalelių detektoriai jonizuojančiosioms dalelėms registruoti. Radiacinė spinduliuotė sukuria defektus medžiagoje ir neigiamai įtakoja detektorių parametrus, todėl būtina charakterizuoti apšvitintus detektorius ieškant būdų, kaip juos patobulinti. Apšvitintų detektorių charakterizavimui taikomi volt-amperinių, volt-faradinių būdingųjų dydžių matavimai ir analizė, giliųjų lygmenų talpinė bei šiluma skatinamų srovių spektroskopija. Tačiau stipriai apšvitintuose detektoriuose, kai defektų koncentracija viršija legirantų koncentraciją bei išauga nuotėkio srovė, šie metodai negali būti taikomi siekiant korektiškai įvertinti radiacinių defektų parametrus. Šiame darbe buvo sukurti modeliai, apibūdinantys slinkties sroves, tekančias detektoriuje dėl elektrinio lauko persiskirstymo keičiantis išorinei įtampai arba elektriniame lauke judant injektuotam krūviui. Šie modeliai buvo pritaikyti naujų metodikų sukūrimui, kurios įgalina įvertinti krūvio pernašos, pagavimo, rekombinacijos/generacijos parametrus stipriai apšvitintuose detektoriuose po apšvitos. Sukurti metodai buvo pritaikyti defektų spektroskopijai ir skersinei žvalgai sluoksninėse struktūrose bei defektų evoliucijos tyrimams apšvitos metu. Disertacijoje pateikti ir aptarti apšvitintų detektorių ir apšvitos metu pasireiškiančios parametrų kaitos rezultatai. Elektronikos grandynuose plačiai naudojami galios pin struktūros diodai, kurie... [toliau žr. visą tekstą]
In high energy physics experiments the semiconductor particle detectors of pin structure are commonly employed for tracking of the ionising particles. However, ionising radiation creates defects and consequently affects the parameters of particle detectors. Therefore, it is necessary to characterize irradiated detectors and search for the new approaches on how to suppress or control the degradation process. Measurements of current-voltage, capacitance-voltage characteristics as well as deep level transient spectroscopy, thermally stimulated currents spectroscopy are employed for the characterization of irradiated particle detectors. At high irradiation fluences when defects concentration exceeds that of dopants, a generation current increases and, thus, the above mentioned techniques can not be applied for the correct evaluation of defect parameters. In this work, models describing displacement currents in detectors due to redistribution of electric field determined by variations of external voltage or a moving charge in electric field are discussed. These models were applied for creation of the advanced techniques which allow evaluating of charge transport, trapping and recombination/generation parameters in heavily irradiated detectors after irradiation. These techniques were applied for the spectroscopy of deep levels associated with defects, for cross-sectional scans within layered junction structures as well as for examination of defects evolution during irradiation. In... [to full text]
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Čeponis, Tomas. "Radiation technologies for optimization of Si device parameters and techniques for control of radiation defects." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20121001_093158-64168.

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In high energy physics experiments the semiconductor particle detectors of pin structure are commonly employed for tracking of the ionising particles. However, ionising radiation creates defects and consequently affects the parameters of particle detectors. Therefore, it is necessary to characterize irradiated detectors and search for the new approaches on how to suppress or control the degradation process. Measurements of current-voltage, capacitance-voltage characteristics as well as deep level transient spectroscopy, thermally stimulated currents spectroscopy are employed for the characterization of irradiated particle detectors. At high irradiation fluences when defects concentration exceeds that of dopants, a generation current increases and, thus, the above mentioned techniques can not be applied for the correct evaluation of defect parameters. In this work, models describing displacement currents in detectors due to redistribution of electric field determined by variations of external voltage or a moving charge in electric field are discussed. These models were applied for creation of the advanced techniques which allow evaluating of charge transport, trapping and recombination/generation parameters in heavily irradiated detectors after irradiation. These techniques were applied for the spectroscopy of deep levels associated with defects, for cross-sectional scans within layered junction structures as well as for examination of defects evolution during irradiation. In... [to full text]
Aukštųjų energijų fizikos eksperimentuose plačiai taikomi puslaidininkiniai pin struktūros dalelių detektoriai jonizuojančiosioms dalelėms registruoti. Radiacinė spinduliuotė sukuria defektus medžiagoje ir neigiamai įtakoja detektorių parametrus, todėl būtina charakterizuoti apšvitintus detektorius ieškant būdų, kaip juos patobulinti. Apšvitintų detektorių charakterizavimui taikomi volt-amperinių, volt-faradinių būdingųjų dydžių matavimai ir analizė, giliųjų lygmenų talpinė bei šiluma skatinamų srovių spektroskopija. Tačiau stipriai apšvitintuose detektoriuose, kai defektų koncentracija viršija legirantų koncentraciją bei išauga nuotėkio srovė, šie metodai negali būti taikomi siekiant korektiškai įvertinti radiacinių defektų parametrus. Šiame darbe buvo sukurti modeliai, apibūdinantys slinkties sroves, tekančias detektoriuje dėl elektrinio lauko persiskirstymo keičiantis išorinei įtampai arba elektriniame lauke judant injektuotam krūviui. Šie modeliai buvo pritaikyti naujų metodikų sukūrimui, kurios įgalina įvertinti krūvio pernašos, pagavimo, rekombinacijos/generacijos parametrus stipriai apšvitintuose detektoriuose po apšvitos. Sukurti metodai buvo pritaikyti defektų spektroskopijai ir skersinei žvalgai sluoksninėse struktūrose bei defektų evoliucijos tyrimams apšvitos metu. Disertacijoje pateikti ir aptarti apšvitintų detektorių ir apšvitos metu pasireiškiančios parametrų kaitos rezultatai. Elektronikos grandynuose plačiai naudojami galios pin struktūros diodai, kurie... [toliau žr. visą tekstą]
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林, 利彦. "高耐圧パワー半導体素子を目指したp型SiC結晶のキャリア寿命に関する研究." 京都大学 (Kyoto University), 2013. http://hdl.handle.net/2433/174947.

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Marinado, Tannia. "Photoelectrochemical studies of dye-sensitized solar cells using organic dyes." Doctoral thesis, Stockholm : Skolan för kemivetenskap,Kungliga Tekniska högskolan, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-11248.

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Books on the topic "Recombination lifetime"

1

C, Gupta D., Bacher Fred R. 1955-, and Hughes William M. 1948-, eds. Recombination lifetime measurements in silicon. West Conshohocken, PA: ASTM, 1998.

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Gupta, D., FR Backer, and W. Hughes, eds. Recombination Lifetime Measurements in Silicon. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959: ASTM International, 1998. http://dx.doi.org/10.1520/stp1340-eb.

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Rastegar, Bahador. Surface recombination velocity and bulk lifetime in GaAs and InP. 1986.

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Aminzadeh, Mehran G. Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers. 1988.

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Eugene, Levin, and United States. National Aeronautics and Space Administration., eds. Computed potential energy surfaces for chemical reactions: Periodic research report for the period, January 1, 1993 - August 31, 1993 for cooperative agreement NCC2-478. [Washington, D.C: National Aeronautics and Space Administration, 1993.

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United States. National Aeronautics and Space Administration, ed. Computed potential energy surfaces for chemical reactions: Semi-annual report for cooperative agreement NCC2-478 for the period January 1, 1988-June 30, 1988. Sunnyvale, CA: The Institute, 1988.

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Computed potential energy surfaces for chemical reactions. Sunnyvale, CA: Floret Institute, 1991.

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Computed potential energy surfaces for chemical reactions: Semi-annual report for cooperative agreement NCC2-478 for the period January 1, 1988-June 30, 1988. Sunnyvale, CA: The Institute, 1988.

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Computed potential energy surfaces for chemical reactions: Semi-annual report for the period Jaunary 1, 1992 - June 30, 1992 ... Sunnyvale, CA: Eloret Institute, 1992.

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United States. National Aeronautics and Space Administration., ed. Computed potential energy surfaces for chemical reactions: Semi-annual report for the period Jaunary 1, 1992 - June 30, 1992 ... Sunnyvale, CA: Eloret Institute, 1992.

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Book chapters on the topic "Recombination lifetime"

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Mialhe, P., J. M. Salagnon, F. Pelanchon, G. Sissoko, and M. Kane. "Lifetime and Surface Recombination Determination." In Tenth E.C. Photovoltaic Solar Energy Conference, 36–38. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_9.

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Fernandes da Silva, E. C. "GaAs: Auger recombination coefficient and lifetime." In New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds, 235–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-48529-2_101.

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Fernandes da Silva, E. C. "GaxIn1–xAs: Auger recombination coefficient and lifetime." In New Data and Updates for III-V, II-VI and I-VII Compounds, 153. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_119.

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Kampwerth, Henner. "Measurement of Carrier Lifetime, Surface Recombination Velocity, and Emitter Recombination Parameters." In Photovoltaic Solar Energy, 339–49. Chichester, UK: John Wiley & Sons, Ltd, 2017. http://dx.doi.org/10.1002/9781118927496.ch31.

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Fernandes da Silva, E. C. "GaxIn1–xAsySb1–y: Auger recombination coefficient, nonradiative lifetime." In New Data and Updates for III-V, II-VI and I-VII Compounds, 180. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_135.

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Savin, Hele, Marko Yli-Koski, A. Haarahiltunen, H. Talvitie, and Juha Sinkkonen. "Detection of Nickel in Silicon by Recombination Lifetime Measurements." In Solid State Phenomena, 183–88. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-43-4.183.

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Ernst, T., A. Vandooren, S. Cristoloveanu, T. E. Rudenko, and J. P. Colinge. "Recombination Current in Fully-Depleted SOI DIODES: Compact Model and Lifetime Extraction." In Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, 213–16. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4261-8_20.

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Garbuzov, D. Z. "Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3B5 Semiconductors and Heterostructures." In Semiconductor Physics, 53–86. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7840-6_5.

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"Influence of Recombination on the Minimum Lifetime." In Materials Concepts for Solar Cells, 80–108. IMPERIAL COLLEGE PRESS, 2014. http://dx.doi.org/10.1142/9781783264469_0003.

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"Influence of Recombination on the Minimum Lifetime." In Materials Concepts for Solar Cells, 81–110. WORLD SCIENTIFIC (EUROPE), 2018. http://dx.doi.org/10.1142/9781786344496_0003.

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Conference papers on the topic "Recombination lifetime"

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Ahrenkiel, R. K., S. P. Ahrenkiel, and D. J. Arent. "Recombination lifetime in ordered and disordered InGaAs." In The 2nd NREL conference on thermophotovoltaic generation of electricity. AIP, 1996. http://dx.doi.org/10.1063/1.49704.

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Ahrenkiel, R. K., T. Wangensteen, M. M. Al-Jassim, M. Wanlass, and T. Coutts. "Recombination lifetime of InxGa1−xAs ternary alloys." In The first NREL conference on thermophotovoltaic generation of electricity. AIP, 1995. http://dx.doi.org/10.1063/1.47050.

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Kobeleva, Svetlana, Ivan Schemerov, Artem Sharapov, and Sergey Yurchuk. "CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1555.silicon-2020/55-58.

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Abstract:
Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.
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Alderman, Nicholas, Lefteris Danos, Martin Grossel, and Tom Markvart. "Novel recombination lifetime mapping technique through Kelvin probe studies." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744132.

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Sugie, R., T. Mitani, M. Yoshikawa, Y. Iwata, and R. Satoh. "Cathodoluminescence Microcharacterization of Recombination Centers in Lifetime-Controlled IGBTs." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.p-14-3.

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Jarasiunas, K., T. Malinauskas, and R. Aleksiejunas. "Dislocation-density Dependent Carrier Lifetime and Stimulated Recombination Threshold in GaN." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729884.

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Wolf, Peter, and Ronald F. Broom. "Measurement Of The Recombination Lifetime In Semiconductor Lasers Using rf Techniques." In OE/FIBERS '89, edited by Shekhar G. Wadekar. SPIE, 1990. http://dx.doi.org/10.1117/12.963464.

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Ahrenkiel, R. K. "Ultra-high frequency photoconductive decay for measuring recombination lifetime in silicon." In The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49405.

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Hettler, C., W. Sullivan, and J. Dickens. "Recombination lifetime modification in bulk, semi-insulating 4H-SiC photoconductive switches." In 2011 IEEE Pulsed Power Conference (PPC). IEEE, 2011. http://dx.doi.org/10.1109/ppc.2011.6191652.

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Blum, Adrienne L., James S. Swirhun, Ronald A. Sinton, Fei Yan, Stanislau Herasimenka, Thomas Roth, Kevin Lauer, et al. "Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744405.

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Reports on the topic "Recombination lifetime"

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S Anikeev, D Donetsky, G Belenky, S Luryl, CA Wang, DA Shiau, M Dashiell, J Beausang, and G Nichols. Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb. Office of Scientific and Technical Information (OSTI), May 2004. http://dx.doi.org/10.2172/836448.

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