Relevant bibliographies by topics / Reactive ion etching

Academic literature on the topic 'Reactive ion etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 20 February 2023

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Journal articles on the topic "Reactive ion etching"

1

Oehrlein, Gottlieb S. "Reactive‐Ion Etching." Physics Today 39, no. 10 (October 1986): 26–33. http://dx.doi.org/10.1063/1.881066.

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Schmid, H. "Microwave etching device for reactive ion etching." Materials Science and Engineering: A 139 (July 1991): 408–16. http://dx.doi.org/10.1016/0921-5093(91)90650-c.

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SHAO, TIAN-QI, TIAN-LING REN, LI-TIAN LIU, JUN ZHU, and ZHI-JIAN LI. "Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories." Integrated Ferroelectrics 61, no. 1 (August 2004): 213–20. http://dx.doi.org/10.1080/10584580490459288.

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Lim, Nomin, Yeon Sik Choi, Alexander Efremov, and Kwang-Ho Kwon. "Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar." Materials 14, no. 7 (March 24, 2021): 1595. http://dx.doi.org/10.3390/ma14071595.

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This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.
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Sandhu, G. S., and W. K. Chu. "Reactive ion etching of diamond." Applied Physics Letters 55, no. 5 (July 31, 1989): 437–38. http://dx.doi.org/10.1063/1.101890.

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Verdonck, P., G. Brasseur, and J. Swart. "Reactive ion etching and plasma etching of tungsten." Microelectronic Engineering 21, no. 1-4 (April 1993): 329–32. http://dx.doi.org/10.1016/0167-9317(93)90084-i.

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Chinn, J. D. "Ion beam enhanced magnetron reactive ion etching." Applied Physics Letters 51, no. 24 (December 14, 1987): 2007–9. http://dx.doi.org/10.1063/1.98275.

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Matocha, Kevin, Chris S. Cowen, Richard Beaupre, and Jesse B. Tucker. "Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC." Materials Science Forum 527-529 (October 2006): 983–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.983.

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4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.
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Jeng, S. J., and G. S. Oehrlein. "Silicon near-surface damage induced by reactive ion etching." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 244–45. http://dx.doi.org/10.1017/s0424820100126123.

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Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath the Si surface caused by CF4/x% H2 (0≤x≤40) reactive ion etching. In the present investigation, high resolution electron microscopy (HREM) is used to study the structures and distribution of lattice defects in the heavily disordered region. Particular attention is paid to the effects of overetch time and hydrogen addition to CF4 etching gas on Si near-surface damage structures.
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Anderson, Ron. "Ion-Beam Milling Materials with Applications to TEM Specimen Preparation." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 266–67. http://dx.doi.org/10.1017/s0424820100163794.

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For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.
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Dissertations / Theses on the topic "Reactive ion etching"

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Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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Morris, Bryan George Oneal. "In situ monitoring of reactive ion etching." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31688.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.
Committee Chair: May, Gary; Committee Member: Brand,Oliver; Committee Member: Hasler,Paul; Committee Member: Kohl,Paul; Committee Member: Shamma,Jeff. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Pugh, C. J. "End point detection in reactive ion etching." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1398304/.

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End-point detection for deep reactive ion etch of silicon in the semiconductor industry has been investigated with a focus on statistical treatments on optical emission spectroscopy. The data reduction technique Principal components analysis (PCA) has been briefly reviewed and analysed as an introduction to independent component analysis (ICA). ICA is a computational dimension reduction technique capable of separating multivariate data into single components. In this instance PCA and ICA are used in to combine the spectral channels of optical emission spectroscopy of plasma processes into a reduced number of components. ICA is based on a fixed-point iteration process maximizing non-gaussianity as a measure of statistical independence. ICA has been shown to offer an improvement in signal to noise ratio when compared to principal component analysis, which has been widely used in previous studies into end-pointing. In addition to the end-point investigation, a study was carried out into the fabrication of arrays of free standing silicon nanorods. The fabrication process consisted of an electron beam lithograpy stage to pattern bare silicon, followed by a deep reactive ion etch - using the Bosch process - to create the nanorods. A variety of difference diameter nanorods, with a selection of pitch dimensions were created using this technique.
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Hedgecock, Ian. "The methane/hydrogen reactive ion etching of InP." Thesis, University of Bristol, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240193.

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Landi, S. "Reactive ion etching techniques for uncooled pyroelectric detectors." Thesis, Cranfield University, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.423086.

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Dickenson, Andrew C. "Measurement and simulation of ion energy distributions in a reactive ion etcher." Thesis, University of Bristol, 1994. http://hdl.handle.net/1983/2e692fca-5cd1-48da-bb7e-6bb76a1bb23b.

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May, Paul W. "The energies of ions, electrons and neutral in reactive ion etching plasmas." Thesis, University of Bristol, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303946.

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Robertson, C. J. "Factors controlling etch anisotropy in plasmas." Thesis, University of Surrey, 1990. http://epubs.surrey.ac.uk/843224/.

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The use of radio frequency (rf) plasma techniques to produce fine structures of precise geometry is widespread in the microelectronics industry. An important factor influencing the functionality of fabricated devices is the wall angle of these structures. In certain applications vertical walls are required - for example to minimise mask degradation and maximise gate densities; in others a sloping sidewall is preferred - to minimise stress in metal coatings when making electrical contact through 'via' holes, for instance. This fine control cannot be achieved on micron and sub-micron scale devices using conventional 'wet' chemical processing techniques and has led to the adoption of so-called 'dry' processing techniques using plasmas. Both vertical and sloping wall profiles can be produced depending upon the plasma conditions. It is apparent, therefore, that a thorough understanding of the processes affecting the etch profile is important. Reactive ion etching (RIE) has been employed to produce micron, and sub-micron size structures in polyimide using an oxygen plasma. Present models of etch directionality all make the initial assumption that the directional component of the etching process can be attributed solely to O2+ ion bombardment of the exposed horizontal surface of the wafer driven by the electric 'sheath' field developed above the electrode. Whether species such as O+ and even multiply charged reactive species such as O++ and O+++ can legitimately be neglected in formulating such a model has yet to be established. That such multiply ionized species exist, however, is highly probable given that plasmas are well known to emit strongly in the ultraviolet. The etching system developed to investigate these problems was equipped with diagnostic techniques including optical emission spectroscopy, mass spectrometry, and a grid energy analyser. The optical emission spectrometer was novel in being capable of measuring emission from the far-ultraviolet emission spectrum of the plasma and was therefore able to detect the high energy ultraviolet light and the singly and multiply ionised species from which this radiation is emitted. Using this technique the role of multiply-ionised species in controlling etch anisotropy was investigated. Results are also presented, obtained from a retarding grid, particle energy analyser built into the surface of the earth electrode, which indicate increased charged particle flux and energy at low pressure providing further information with regard to the process dynamics. The influence of gas pressure and rf excitation frequency on the resultant etch profile have been investigated. Results are presented showing the presence of doubly-ionised atomic oxygen O++ in the plasma. It is shown in this work that O++ also has a role in etch anisotropy at low pressure. This and other more highly charged species need to be considered, therefore, in formulating models of etch anisotropy, etch rate, and etch chemistry and reaction mechanisms. The role of ultraviolet irradiation which is itself of sufficient energy to induce surface reactions must also be considered.
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Chatfield, Robert J. "Mass and optical spectroscopy of CF₄ + O₂ plasmas and their application to the etching of Si, Ge and SiGe alloys." Thesis, University of Bristol, 1993. http://hdl.handle.net/1983/821a17c4-1dad-442b-9179-1f521e571c0f.

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Fagan, James G. "Reactive ion etching of polymide films using a radio frequency discharge /." Online version of thesis, 1987. http://hdl.handle.net/1850/10284.

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Books on the topic "Reactive ion etching"

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Fagan, James G. Reactive ion etching of polyimide films using a radio frequency discharge. Rochester N. Y: Rochester Institute of Technology, Materials Science and Engineering, 1987.

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Sahafi, Hossein Fariborz. A study of reactive ion etching of gallium arsenide in mixtures of methane and hydrogen plasmas. [London]: [Middlesex University], 1992.

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Molloy, James. Argon and argon-chlorine plasma reactive ion etching and surface modification of transparent conductive tin oxide thin films for high resolution flat panel display electrode matrices. [s.l: The Author], 1997.

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Book chapters on the topic "Reactive ion etching"

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Franssila, Sami, and Lauri Sainiemi. "Reactive Ion Etching (RIE)." In Encyclopedia of Microfluidics and Nanofluidics, 2911–21. New York, NY: Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4614-5491-5_1344.

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Franssila, Sami, and Lauri Sainiemi. "Reactive Ion Etching (RIE)." In Encyclopedia of Microfluidics and Nanofluidics, 1–13. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-3-642-27758-0_1344-5.

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Pan, W. S., and A. J. Steckl. "Reactive Ion Etching for SiC Device Fabrication." In Amorphous and Crystalline Silicon Carbide and Related Materials, 192–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_29.

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Rangelow, I. W., and P. Hudek. "Lithography and Reactive Ion Etching in Microfabrication." In Photons and Local Probes, 325–44. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0423-4_30.

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Rangelow, I. W., and R. Kassing. "Silicon Microreactors made by Reactive Ion Etching." In Microreaction Technology, 169–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-72076-5_19.

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Hartney, M. A., D. W. Hess, and D. S. Soane. "Reactive Ion Etching of Silicon Containing Resists." In Plasma-Surface Interactions and Processing of Materials, 503–5. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-1946-4_33.

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Müller, Roland. "Ellipsometry for Process Control in Reactive Ion Etching." In Micro System Technologies 90, 219–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_30.

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Hamaguchi, S., and H. Ohta. "Modeling of Reactive Ion Etching for Si/Si02Systems." In Simulation of Semiconductor Processes and Devices 2001, 170–73. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_37.

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Xia, Jun Hai, E. Rusli, R. Gopalakrishnan, S. F. Choy, Chin Che Tin, J. Ahn, and S. F. Yoon. "Reactive Ion Etching Induced Surface Damage of Silicon Carbide." In Materials Science Forum, 765–68. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.765.

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Pan, W. S., and A. J. Steckl. "Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films." In Springer Proceedings in Physics, 217–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_43.

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Conference papers on the topic "Reactive ion etching"

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WU, YiHan, and HaiLin He. "Reactive ion etching and deep reactive ion etching processes." In 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), edited by Xuexia Ye. SPIE, 2022. http://dx.doi.org/10.1117/12.2634681.

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WU, YiHan, and HaiLin He. "Reactive ion etching and deep reactive ion etching processes." In 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), edited by Xuexia Ye. SPIE, 2022. http://dx.doi.org/10.1117/12.2634681.

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Sukanek, Peter C., and Glynis Sullivan. "Reactive Ion Etching Of Silicon Dioxide." In Hague International Symposium, edited by Harry L. Stover and Stefan Wittekoek. SPIE, 1987. http://dx.doi.org/10.1117/12.975614.

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Vawter, G. Allen. "Reactive Ion Etching Of Laser Structures." In 1988 Semiconductor Symposium, edited by Harold G. Craighead and Jagdish Narayan. SPIE, 1988. http://dx.doi.org/10.1117/12.947383.

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Choudhary, A., J. Cugat, K. Pradeesh, R. Sole, F. Diaz, M. Aguilo, H. M. H. Chong, and D. P. Shepherd. "On the reactive ion etching of RbTiOPO4." In 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC. IEEE, 2013. http://dx.doi.org/10.1109/cleoe-iqec.2013.6800965.

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SATO, Masayuki, Daisuke KIMURA, Nobuyuki TAKENAKA, Shigeo ONISHI, Keizo SAKIYAMA, and Tohru HARA. "Low Damage Magnetron Enhanced Reactive Ion Etching." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.pb2-4.

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Patel, Kaushal S., Victor Pham, Wenjie Li, Mahmoud Khojasteh, and Pushkara Rao Varanasi. "Reactive ion etching of fluorine containing photoresist." In SPIE 31st International Symposium on Advanced Lithography, edited by Qinghuang Lin. SPIE, 2006. http://dx.doi.org/10.1117/12.656605.

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Hartney, Mark A., Wayne M. Greene, Dennis W. Hess, and David S. Soong. "Oxygen Reactive Ion Etching For Multilevel Lithography." In Microlithography Conference, edited by Murrae J. Bowden. SPIE, 1987. http://dx.doi.org/10.1117/12.940343.

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Abramo, M. T., E. B. Roy, and S. M. LeCours. "Reactive ion etching for failure analysis applications." In 30th Annual Proceedings Reliability Physics 1992. IEEE, 1992. http://dx.doi.org/10.1109/relphy.1992.187663.

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Abramo, Marsha T., Erica B. Roy, and Steven M. LeCours. "Reactive Ion Etching for Failure Analysis Applications." In 30th International Reliability Physics Symposium. IEEE, 1992. http://dx.doi.org/10.1109/irps.1992.363312.

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Reports on the topic "Reactive ion etching"

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Zaidi, S. H. Random and Uniform Reactive Ion Etching Texturing of Si. Office of Scientific and Technical Information (OSTI), April 1999. http://dx.doi.org/10.2172/5938.

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ZAIDI, SALEEM H. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells. Office of Scientific and Technical Information (OSTI), May 2002. http://dx.doi.org/10.2172/800948.

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Washington, Derwin. Reactive Ion Etching of PECVD Silicon Dioxide (SiO2) Layer for MEMS Application. Fort Belvoir, VA: Defense Technical Information Center, July 2004. http://dx.doi.org/10.21236/ada425806.

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Dems, B. C., and F. Rodriguez. The Role of Heat Transfer during Reactive-Ion Etching of Polymer Films. Fort Belvoir, VA: Defense Technical Information Center, May 1990. http://dx.doi.org/10.21236/ada222072.

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McLane, George F., Paul Cooke, and Robert P. Moerkirk. Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas. Fort Belvoir, VA: Defense Technical Information Center, May 1996. http://dx.doi.org/10.21236/ada310955.

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Scherer, Axel. Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE): Nanofabrication Tool for High Resolution Pattern Transfer. Fort Belvoir, VA: Defense Technical Information Center, October 2001. http://dx.doi.org/10.21236/ada396342.

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Palmisiano, M. N., G. M. Peake, R. J. Shul, C. I. Ashby, J. G. Cederberg, M. J. Hafich, and R. M. Biefeld. Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics. Office of Scientific and Technical Information (OSTI), October 2002. http://dx.doi.org/10.2172/805334.

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Lee, J. W., S. J. Pearton, C. R. Abernathy, G. A. Vawter, R. J. Shul, M. M. Bridges, and C. L. Willison. In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/292864.

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