Journal articles: 'RD53A'

1

Senger, T. "Prototyping serial powering for the ATLAS ITk pixel detector." Journal of Instrumentation 18, no. 01 (January 1, 2023): C01026. http://dx.doi.org/10.1088/1748-0221/18/01/c01026.

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Abstract The high luminosity upgrade for the LHC at CERN requires a complete overhaul of the current inner detectors of ATLAS and CMS. A serial powering scheme has been chosen to cope with the constraints of the new pixel detectors. A prototype stave consisting of up to 8 quad modules, based on the new readout chips developed by the RD53 collaboration in 65 nm CMOS technology, RD53A and ITkPixV1, has been set up in Bonn. This contribution covers the results obtained with RD53A modules and presents first measurements with a full ITkPixV1.1 serial powering chain.

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Hinterkeuser, F., M. Hamer, M. Daas, F. Hügging, H. Krüger, U. C. Perry, D.-L. Pohl, and K. Desch. "Prototyping serial powering with RD53A." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012086. http://dx.doi.org/10.1088/1742-6596/2374/1/012086.

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The ATLAS inner detector will be replaced by an all-silicon detector for the HL-LHC upgrade around 2025. The innermost five layers of the detector system will be pixel detector layers which will be most challenging in terms of radiation hardness, data rate and readout speed. A serial power scheme will be used for the pixel layers to reduce the material budget and power consumption in cables. New elements are required to operate and monitor a serially powered detector including a detector control system, constant current sources and front-end electronics with shunt regulators. Prototypes for all sections of the ITk pixel detector are built to verify the concept and operate multiple serial power chains as a system test. The evaluation of both the readout of multi-modules and mechanical integration are further aims of the prototyping campaign. In the contribution, results will be presented of this prototyping effort. Moreover, details and features of serial powering for full detector systems will be given.

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Jofrehei, A., M. Backhaus, P. Baertschi, F. Canelli, F. Glessgen, W. Jin, B. Kilminster, et al. "Characterization of irradiated RD53A pixel modules with passive CMOS sensors." Journal of Instrumentation 17, no. 09 (September 1, 2022): C09004. http://dx.doi.org/10.1088/1748-0221/17/09/c09004.

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Abstract We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150 nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of 25 × 100 μm2 in case of DC coupled devices and 50 × 50 μm2 for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to 1.0 × 1 0 16 n eq c m 2 .

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Terzo, S., M. Chmeissani, G. Giannini, S. Grinstein, M. Manna, G. Pellegrini, D. Quirion, and D. Vazquez Furelos. "Performance of Irradiated RD53A 3D Pixel Sensors." Journal of Instrumentation 14, no. 06 (June 5, 2019): P06005. http://dx.doi.org/10.1088/1748-0221/14/06/p06005.

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Glessgen, Franz, Malte Backhaus, Florencia Canelli, Yannick Manuel Dieter, Jochen Christian Dingfelder, Tomasz Hemperek, Fabian Huegging, et al. "Characterization of passive CMOS sensors with RD53A pixel modules." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012174. http://dx.doi.org/10.1088/1742-6596/2374/1/012174.

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Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 μm2 cell geometry.

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Carlotto, J. I., P. Fernandez-Martinez, S. Terzo, J. T. Gonzalez, and S. Grinstein. "Characterization of the first RD53A triplet modules assembled at IFAE." Journal of Instrumentation 17, no. 10 (October 1, 2022): C10018. http://dx.doi.org/10.1088/1748-0221/17/10/c10018.

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Abstract IFAE is engaged in the production of linear triplet modules for the forthcoming upgrade of the Inner Tracker for the high luminosity phase of the Large Hadron Collider. The pre-production process requires the fabrication of early prototypes (the RD53A chip) to inform the assembly and electrical test methodologies. Module prototypes (also called triplets) include a set of 3 hybrids (sensors connected to readout chips), all of them are mounted in an individual flexible PCB. This document presents the assembly methodologies and main electrical tests results for the first set of 4 modules assembled at IFAE.

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Samy, M. A. A., D. M. S. Sultan, A. Lapertosa, G. Gariano, and G. F. Dalla Betta. "Cold temperature characterization of ring triplets based on RD53A readout chip." Journal of Instrumentation 17, no. 11 (November 1, 2022): C11005. http://dx.doi.org/10.1088/1748-0221/17/11/c11005.

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Abstract This paper reports the Trento test setup and the cold test procedure for three triplets (ID: R4, R5, and R6) assembled with RD53A readout cheap and planar sensors. The trim and tuning of Front Ends (FE), as well as sensor I-V measurements, were made for a cold temperature (−25 °C) for an applied voltage (−30 V for R4, −10 V for R5 and R6). As a part of QC, initially, several test scans: analog, digital, threshold, ToT, noise, etc., were performed to evaluate the module response at −25 °C before applying a necessary tuning script to find a spatially uniform threshold distribution over the pixel matrix. Later, the crosstalk-based disconnected-bump and X-ray scans were made to check modules’ bump bonding quality and hits per pixel. Results reported here show a good agreement to a qualified triplet module, assuring the Trento cold test setup capacity for the ATLAS ITk QA/QC process.

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Dieter, Y., M. Daas, J. Dingfelder, T. Hemperek, F. Hügging, J. Janssen, H. Krüger, et al. "Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1015 (November 2021): 165771. http://dx.doi.org/10.1016/j.nima.2021.165771.

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Duarte-Campderros, J., E. Currás, M. Fernández, G. Gómez, A. García, J. González, E. Silva, et al. "Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 944 (November 2019): 162625. http://dx.doi.org/10.1016/j.nima.2019.162625.

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10

Adam, W., T. Bergauer, D. Blöch, M. Dragicevic, R. Frühwirth, V. Hinger, H. Steininger, et al. "Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC." Journal of Instrumentation 16, no. 12 (December 1, 2021): P12014. http://dx.doi.org/10.1088/1748-0221/16/12/p12014.

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Abstract The CMS Inner Tracker, made of silicon pixel modules, will be entirely replaced prior to the start of the High Luminosity LHC period. One of the crucial components of the new Inner Tracker system is the readout chip, being developed by the RD53 Collaboration, and in particular its analogue front-end, which receives the signal from the sensor and digitizes it. Three different analogue front-ends (Synchronous, Linear, and Differential) were designed and implemented in the RD53A demonstrator chip. A dedicated evaluation program was carried out to select the most suitable design to build a radiation tolerant pixel detector able to sustain high particle rates with high efficiency and a small fraction of spurious pixel hits. The test results showed that all three analogue front-ends presented strong points, but also limitations. The Differential front-end demonstrated very low noise, but the threshold tuning became problematic after irradiation. Moreover, a saturation in the preamplifier feedback loop affected the return of the signal to baseline and thus increased the dead time. The Synchronous front-end showed very good timing performance, but also higher noise. For the Linear front-end all of the parameters were within specification, although this design had the largest time walk. This limitation was addressed and mitigated in an improved design. The analysis of the advantages and disadvantages of the three front-ends in the context of the CMS Inner Tracker operation requirements led to the selection of the improved design Linear front-end for integration in the final CMS readout chip.

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Missiroli, M. "Characterisation of the first digital modules with RD53B-CMS readout chips for the Phase-2 Upgrade of the CMS Inner Tracker." Journal of Instrumentation 18, no. 01 (January 1, 2023): C01027. http://dx.doi.org/10.1088/1748-0221/18/01/c01027.

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Abstract To cope with the challenges posed by the High-Luminosity LHC, the CMS experiment will feature a new silicon tracker. The modules of the upgraded inner tracker are hybrid silicon pixel modules based on a new readout chip, developed by the RD53 collaboration. Compared to the readout chip of the current pixel detector, the RD53 chip is capable of sustaining higher hit rates and radiation levels, as well as enabling the use of serial-powering chains. The qualification of the latest version of this chip (RD53B) is underway, and it will lead to the final version of the readout chip to be used in the CMS inner tracker during the HL-LHC. First digital modules featuring the RD53B-CMS chip have been assembled in 2022 (the term digital module denotes a module assembly with readout chips, but without sensors bonded to them). This contribution presents results of tests on these first prototype modules.

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Vogt, M. "Radiation-induced effects on data integrity and link stability of the RD53A pixel readout chip." Journal of Instrumentation 14, no. 05 (May 23, 2019): C05018. http://dx.doi.org/10.1088/1748-0221/14/05/c05018.

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Cassese, A., R. Ceccarelli, M. Meschini, L. Viliani, M. Dinardo, S. Gennai, L. Moroni, et al. "Performances of highly irradiated 3d and planar pixel sensors interconnected to the RD53A readout chip." Journal of Instrumentation 15, no. 02 (February 11, 2020): C02016. http://dx.doi.org/10.1088/1748-0221/15/02/c02016.

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14

Heggelund, A. L., S. Huiberts, O. Dorholt, A. L. Read, O. Rohne, H. Sandaker, M. Lauritzen, et al. "Radiation hard 3D silicon pixel sensors for use in the ATLAS detector at the HL-LHC." Journal of Instrumentation 17, no. 08 (August 1, 2022): P08003. http://dx.doi.org/10.1088/1748-0221/17/08/p08003.

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Abstract The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above 1 × 1016 neqcm-2. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size 50 × 50 μm2 mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of 1 × 1016 neqcm-2 when biased to 80 V.

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Sharma, Abhishek. "Module development for the ATLAS ITk Pixel Detector." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012068. http://dx.doi.org/10.1088/1742-6596/2374/1/012068.

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In HL-LHC operation the instantaneous luminosity will reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. The current ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The innermost part of ITk will consist of a state-of-the-art pixel detector. Several different silicon sensor technologies will be employed in the five barrel and endcap layers. Based on first modules assembled using the RD53A prototype readout chip, numerous issues are being studied. These include production ones like bump bonding of large area, thin modules, as well as the optimization of the bandwidth and sharing of links between multiple chips and modules. These proceedings will present results of many of these studies, which directly impact the construction and assembly of modules using the first production version of the readout chip ITkPixV1, which will become available shortly.1

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Samy, Md A. A., A. Lapertosa, L. Vannoli, C. Gemme, and G. F. Dalla Betta. "Characterization of FBK 3D pixel sensor modules based on RD53A readout chip for the ATLAS ITk." Journal of Instrumentation 16, no. 12 (December 1, 2021): C12028. http://dx.doi.org/10.1088/1748-0221/16/12/c12028.

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Abstract CERN is planning to upgrade its Large Hadron Collider to the High Luminosity phase (HL-LHC), pushing detector technologies to cope with unprecedently demanding performance in terms of particle rate and radiation hardness. The ATLAS experiment decided to equip the innermost layer (L0) of its Inner Tracker (ITk) with small-pitch 3D pixels of two different geometries, i.e., 25 µm × 100 µm for the central barrel and 50 µm × 50 µm for the lateral rings. A new generation of 3D pixels featuring these small-pitch dimensions and reduced active thickness (∼150 µm) has been developed to this purpose within a collaboration of INFN and FBK since 2014. Recently, the R&D activities have been focused on the characterization of modules based on sensors compatible with the RD53A readout chip, which were tested in laboratory and at beam lines. In this paper, we report on the characterization of modules irradiated with protons up to a fluence of 1 × 1016 neq/cm2, including threshold tuning and noise measurements, and results from beam tests performed at DESY. Moreover, we will discuss about the electrical characteristics at wafer level and at module level before and after irradiation.

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Menouni, Mohsine, Pierre Barrillon, Leyre Flores, Denis Fougeron, Tomasz Hemperek, Eva Joly, Jelena Lalic, and Thomas Strebler. "Single event effects testing of the RD53B chip." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012084. http://dx.doi.org/10.1088/1742-6596/2374/1/012084.

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The RD53 collaboration has been working since 2014 on the development of pixel chips for the CMS and ATLAS Phase 2 tracker upgrade. This work has recently led to the development of the RD53B full-scale readout chip which is using the 65nm CMOS process and containing 153600 pixels of 50 × 50 μm 2 The RD53B chip is designed to be robust against the Single Event Effects (SEE), allowing such a complex chip to operate reliably in the hostile environment of the HL-LHC. Different SEE mitigation techniques based on the Triple Modular Redundancy (TMR) have been adopted for the critical information in the chip. Furthermore, the efficiency of this mitigation scheme has been evaluated for the RD53B chip with heavy ion beams in the CYCLONE facility and with a 480 MeV proton beam in TRIUMF facility. The purpose of this paper is to describe and explain all the SEE mitigation strategies used in the RD53B chip, to report and analyze the heavy ions and proton tests results and to estimate the expected Single Event Upset (SEU) rates at the HL-LHC.

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Dieter, Y., M. Daas, J. Dingfelder, G. Giakoustidis, T. Hemperek, F. Hügging, J. Janssen, et al. "Characterization of small-pixel passive CMOS sensors in 150 nm LFoundry technology using the RD53A readout chip." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 972 (August 2020): 164130. http://dx.doi.org/10.1016/j.nima.2020.164130.

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Perovic, Vasilije. "Serial powering in four-chip prototype RD53A modules for Phase 2 upgrade of the CMS pixel detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 978 (October 2020): 164436. http://dx.doi.org/10.1016/j.nima.2020.164436.

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Backhaus, M., M. Garcia-Sciveres, F. Glessgen, T. Heim, B. Ristic, and R. Wallny. "Study and parameter optimization of a tuning method for the online calibration of the RD53A readout chip." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 984 (December 2020): 164594. http://dx.doi.org/10.1016/j.nima.2020.164594.

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Terzo, Stefano, Juan Carlotto, Sebastian Grinstein, Maria Manna, Giulio Pellegrini, and David Quirion. "Performance of radiation hard 3D pixel sensors for the upgrade of the ATLAS Inner Tracker." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012168. http://dx.doi.org/10.1088/1742-6596/2374/1/012168.

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The Inner Detector of the ATLAS experiment at CERN will be replaced by a completely new Inner Tracker (ITk) to exploit the performance of the High Luminosity upgrade of the LHC accelerator (HL-LHC). The new detector will have to operate in an unprecedented radiation environment. In particular, the hybrid pixel detectors of the innermost layer of the ITk will be exposed to a particle fluence of about 1.7 × 1016 neq/cm2 before being replaced. A novel 3D pixel sensor technology featuring thin active substrates and small pixel cells has been selected to instrument the innermost barrel layer and rings of the ATLAS ITk. Prototypes of 3D pixel sensors produced at CNM in Barcelona, Spain, including 3D pixelated test structures as well as half-size sensors coupled to the RD53A ASIC prototype for HL-LHC, have been irradiated with protons and neutrons up to the radiation doses expected for the innermost layers of ITk. Their performance in terms of leakage current, power dissipation and hit efficiency of different pixel geometries after irradiation have been investigated and compared to the requirements for ITk.

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Bardelli, G. "Results obtained with FBK pixel sensor prototypes for the HL-LHC tracker upgrade of the CMS experiment." Journal of Instrumentation 18, no. 01 (January 1, 2023): C01028. http://dx.doi.org/10.1088/1748-0221/18/01/c01028.

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Abstract The High Luminosity Phase of the CERN Large Hadron Collider (HL-LHC) will require an extensive upgrade of the CMS Inner Tracking system based on high radiation tolerant silicon pixel sensors capable of withstanding fluences up to 23 × 1015 neq/cm2 (1 MeV equivalent neutrons). Thin planar and 3D pixel sensors have been recently selected by CMS to be installed in the upgraded pixel tracker. Thanks to their structure, the 3D pixel sensors have some advantages with respect to planar ones, and are presently more suitable candidates for the innermost layer of the tracker. In this presentation results obtained with FBK planar and FBK 3D sensors readout by prototype read-out chip RD53A will be shown. Both sensor types have 25 × 100 μm2 pitch and 150 μm thickness, and they were manufactured in collaboration with INFN. The sensors readout by the chip were irradiated to several fluences up to the one foreseen for HL-LHC. The analysis of collected data shows very high hit detection efficiency and good spatial resolution as measured after irradiation.

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Dimitrievska, Aleksandra, and Andreas Stiller. "RD53A: A large-scale prototype chip for the phase II upgrade in the serially powered HL-LHC pixel detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 958 (April 2020): 162091. http://dx.doi.org/10.1016/j.nima.2019.04.045.

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Meschini, M., R. Ceccarelli, M. Dinardo, S. Gennai, L. Moroni, D. Zuolo, L. Demaria, et al. "First results on 3D pixel sensors interconnected to the RD53A readout chip after irradiation to 1×1016 neq cm−2." Journal of Instrumentation 14, no. 06 (June 18, 2019): C06018. http://dx.doi.org/10.1088/1748-0221/14/06/c06018.

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Gaioni, Luigi. "Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 936 (August 2019): 282–85. http://dx.doi.org/10.1016/j.nima.2018.11.107.

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Hajheidari, M. "Characterisation of planar sensors for the inner tracker of the CMS experiment." Journal of Instrumentation 17, no. 09 (September 1, 2022): C09002. http://dx.doi.org/10.1088/1748-0221/17/09/c09002.

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Abstract The Compact Muon Solenoid (CMS) experiment is expected to collect an integrated luminosity of 3000 fb−1 during the High Luminosity phase of the Large Hadron Collider (HL-LHC). This scenario comes with a high number of collisions per bunch crossing, and in turn, a high level of radiation for the innermost layer of the CMS tracker. Simulations estimate a 1 MeV neutron equivalent fluence, Φeq, of 2.3 × 1016 cm−2 at a distance of 2.8 cm from the collision point. The inner tracker of the CMS detector is required to withstand this range of fluence and maintain tracking performance. Planar pixel sensors with an active thickness of 150 μm and pixel sizes of 25 × 100 μm2 or 50 × 50 μm2 have been produced by Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK). The sensors were bump bonded to the RD53A readout chip prototype. The sensor-chip modules were irradiated with 23 MeV protons to the 1 MeV neutron equivalent fluence of up to 2.4 × 1016 cm−2 at the Zyklotron AG (ZAG). Non-irradiated and irradiated modules were tested in the DESY II beam test facility. The spatial resolution as a function of the incidence angle and hit efficiency as a function of the bias voltage of the sensors were determined from these measurements. It is shown that for the highest fluence, the planar modules still reach 98% hit efficiency at bias voltages below 800 V.

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Sultan, D. M. S., M. A. Abdulla Samy, J. X. Ye, M. Boscardin, F. Ficorella, S. Ronchin, and G. F. Dalla Betta. "Quality Control (QC) of FBK preproduction 3D Si sensors for ATLAS HL-LHC Upgrades." Journal of Instrumentation 17, no. 12 (December 1, 2022): C12016. http://dx.doi.org/10.1088/1748-0221/17/12/c12016.

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Abstract The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50 × 50 μm2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures.

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Standke, Mark. "RD53B Wafer Testing for the ATLAS ITk Pixel Detector." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012087. http://dx.doi.org/10.1088/1742-6596/2374/1/012087.

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RD53B/ITkPix-V1 is the most recent hybrid pixel readout chip development for the ATLAS pixel detector at the HL-LHC. It is the first full-scale 65 nm hybrid pixel-readout chip of its kind. ITkPix-V1 consists of more than one billion transistors with a high memory triplication ratio to cope with the high particle density at the heart of ATLAS. Chips will be as close to the interaction point as possible to optimize the resolution of impact parameters. The ITkPix-V1 chip features a 5-Gbit connection, with special data compression to deal with high hit intensities. In addition, a low-power, low-noise analog front-end is used to ensure high readout speeds and low detection thresholds. Failure of chips in ATLAS would be problematic. Therefore, a thorough test is necessary before and during production. For this purpose, the Bonn ATLAS group has developed BDAQ53, a fast and versatile simulation and testing environment that allows small and large-scale testing for ITkPix-V1 and its successor chips. This conference note will give an overview of the testing environment while focusing on large-scale wafer testing to evaluate ITkPix-V1’s suitability for its deployment at the HL-LHC.

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Lalic, J., D. Fougeron, E. Madsen, E. R. A. Joly, J. Christiansen, L. Flores Sanz De Acedo, M. Menouni, et al. "Single event effects on the RD53B pixel chip digital logic and on-chip CDR." Journal of Instrumentation 17, no. 05 (May 1, 2022): C05001. http://dx.doi.org/10.1088/1748-0221/17/05/c05001.

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Abstract The RD53B chip for HL-LHC upgrades of ATLAS and CMS pixel detectors needs to provide reliable operation in a radiation hostile environment with inevitable Single Event Effects (SEE). To answer the challenge, substantial efforts are made to protect and evaluate the critical parts of the digital logic and to characterize the on-chip Clock and Data Recovery (CDR) circuit. The SEE sensitivity of the digital logic is evaluated by testing with both heavy-ions and protons. The on-chip CDR is characterized by measuring the SEE-induced phase shifts of its output clocks and their implication on the high-speed link stability.

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Kampkötter, Jeremias, Michael Karagounis, Dominik Koukola, Flavio Loddo, Stella Orfanelli, Alvaro Pradas Luengo, Gianluca Traversi, and Rainer Kokozinski. "Characterization and verification of the Shunt-LDO regulator and its protection circuits for serial powering of the ATLAS and CMS pixel detectors." Journal of Physics: Conference Series 2374, no. 1 (November 1, 2022): 012071. http://dx.doi.org/10.1088/1742-6596/2374/1/012071.

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The Shunt-LDO regulator has been integrated in the ATLAS and the CMS pixel detector RD53 front-end chip to implement the serial powering scheme which both experiments have chosen as the baseline option for the HL-LHC upgrade. The performance of the integrated regulators has been characterized and specific design challenges have been identified which are related to layout parasitics and shallow trench isolation (STI) stress effects. In addition the functionality of circuits which address crucial system level aspects like the protection against overvoltage/overload has been verified.

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Demaria, N., M. B. Barbero, D. Fougeron, F. Gensolen, S. Godiot, M. Menouni, P. Pangaud, et al. "Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC." Journal of Instrumentation 11, no. 12 (December 21, 2016): C12058. http://dx.doi.org/10.1088/1748-0221/11/12/c12058.

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Zhang, H., M. Caselle, B. Leyrer, U. Bauer, P. Pfistner, and I. Perić. "Radiation hard active pixel sensor with 25μm × 50μm pixel size designed for capacitive readout with RD53 ASIC." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 958 (April 2020): 162760. http://dx.doi.org/10.1016/j.nima.2019.162760.

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Marconi, S., E. Conti, P. Placidi, J. Christiansen, and T. Hemperek. "The RD53 collaboration's SystemVerilog-UVM simulation framework and its general applicability to design of advanced pixel readout chips." Journal of Instrumentation 9, no. 10 (October 7, 2014): P10005. http://dx.doi.org/10.1088/1748-0221/9/10/p10005.

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Conti, E., S. Marconi, J. Christiansen, P. Placidi, and T. Hemperek. "Simulation of digital pixel readout chip architectures with the RD53 SystemVerilog-UVM verification environment using Monte Carlo physics data." Journal of Instrumentation 11, no. 01 (January 26, 2016): C01069. http://dx.doi.org/10.1088/1748-0221/11/01/c01069.

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Lévesque, Céline, Martin Duplessis, Jessica Labonté, Steve Labrie, Christophe Fremaux, Denise Tremblay, and Sylvain Moineau. "Genomic Organization and Molecular Analysis of Virulent Bacteriophage 2972 Infecting an Exopolysaccharide-Producing Streptococcus thermophilus Strain." Applied and Environmental Microbiology 71, no. 7 (July 2005): 4057–68. http://dx.doi.org/10.1128/aem.71.7.4057-4068.2005.

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ABSTRACT The Streptococcus thermophilus virulent pac-type phage 2972 was isolated from a yogurt made in France in 1999. It is a representative of several phages that have emerged with the industrial use of the exopolysaccharide-producing S. thermophilus strain RD534. The genome of phage 2972 has 34,704 bp with an overall G+C content of 40.15%, making it the shortest S. thermophilus phage genome analyzed so far. Forty-four open reading frames (ORFs) encoding putative proteins of 40 or more amino acids were identified, and bioinformatic analyses led to the assignment of putative functions to 23 ORFs. Comparative genomic analysis of phage 2972 with the six other sequenced S. thermophilus phage genomes confirmed that the replication module is conserved and that cos- and pac-type phages have distinct structural and packaging genes. Two group I introns were identified in the genome of 2972. They interrupted the genes coding for the putative endolysin and the terminase large subunit. Phage mRNA splicing was demonstrated for both introns, and the secondary structures were predicted. Eight structural proteins were also identified by N-terminal sequencing and/or matrix-assisted laser desorption ionization—time-of-flight mass spectrometry. Detailed analysis of the putative minor tail proteins ORF19 and ORF21 as well as the putative receptor-binding protein ORF20 showed the following interesting features: (i) ORF19 is a hybrid protein, because it displays significant identity with both pac- and cos-type phages; (ii) ORF20 is unique; and (iii) a protein similar to ORF21 of 2972 was also found in the structure of the cos-type phage DT1, indicating that this structural protein is present in both S. thermophilus phage groups. The implications of these findings for phage classification are discussed.

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Terzo, Stefano, Maurizio Boscardin, Juan Carlotto, Gian-Franco Dalla Betta, Giovanni Darbo, Ole Dorholt, Francesco Ficorella, et al. "Novel 3D Pixel Sensors for the Upgrade of the ATLAS Inner Tracker." Frontiers in Physics 9 (April 21, 2021). http://dx.doi.org/10.3389/fphy.2021.624668.

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The ATLAS experiment will undergo a full replacement of its inner detector to face the challenges posed by the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). The new Inner Tracker (ITk) will have to deal with extreme particle fluences. Due to its superior radiation hardness the 3D silicon sensor technology has been chosen to instrument the innermost pixel layer of ITk, which is the most exposed to radiation damage. Three foundries (CNM, FBK, and SINTEF), have developed and fabricated novel 3D pixel sensors to meet the specifications of the new ITk pixel detector. These are produced in a single-side technology on either Silicon On Insulator (SOI) or Silicon on Silicon (Si-on-Si) bonded wafers by etching both n- and p-type columns from the same side. With respect to previous generations of 3D sensors they feature thinner active substrates and smaller pixel cells of 50 × 50 and 25 × 100 µm2. This paper reviews the main design and technological issues of these novel 3D sensors, and presents their characterization before and after exposure to large radiation doses close to the one expected for the innermost layer of ITk. The performance of pixel modules, where the sensors are interconnected to the recently developed RD53A chip prototype for HL-LHC, has been investigated in the laboratory and at beam tests. The results of these measurements demonstrate the excellent radiation hardness of this new generation of 3D pixel sensors that enabled the project to proceed with the pre-production for the ITk tracker.

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Journal articles on the topic 'RD53A'

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