Dissertations / Theses on the topic 'Radio frequency inductively-coupled plasma'
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Chen, Bing-Hung. "Inductively coupled radio-frequency discharges." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.244566.
Full textCanturk, Mehmet. "Modeling Of Helically Applied Current To The Inductively Coupled Radio Frequency Plasma Torch In Two Dimensions." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12604691/index.pdf.
Full text40 MHz). The applied power is coupled into the plasma inductively called inductively coupled plasma (ICP). RF ICP technique has achieved significance importance in a diversity of research and industrial applications for over the last threes decades. It is still required to undertake both theoretical and experimental research. In this work, RF ICP technique is applied on the torch modeling in 2D. Based on extended electromagnetic vector potential representation, an axisymmetric model in 2D is proposed for the calculations of the electromagnetic fields in an RF ICP torch. The influence of axial vector potential is included to the vector potential formulations. This is achieved by imposing a helical current carrying wire configuration. The corresponding governing equations are solved numerically by applying finite element method (FEM) using commercial partial differential equation solver (Flex PDE3). Based on this model, the plasma behavior and properties are examined in terms of plasma parameters. Besides, a comparative iii analysis is made between proposed model called helical configuration and the one currently available in the literature called circular configuration. This study shows relatively little difference between temperature fields predicted by two models. However, significant difference is observed between corresponding flows and electromagnetic fields. Especially, tangential flow which is observed in helical configuration vanishes in circular configuration. The proposed model offers an effective means of accounting for the variations of the helical coil geometry on the flow and temperature fields and achieving a better representation of the electromagnetic fields in the discharge. Finally, it is concluded that minimum number of turns (n = 2) yields significant difference between two models whereas, maximum allowable number of turns yield no distinctions on the results of two models in terms of azimuthally applied current. However, axial effect of current still exists but very small with respect to the result obtained with minimum number of turns.
Yang, Suidong. "Diagnostics and modelling of an inductively coupled RF low-pressure low-temperature plasma." Thesis, n.p, 1998. http://oro.open.ac.uk/19841/.
Full textRainey, Joe Seaburn. "Synthesis of fullerenes and metallic fullerenes by the utilization of an argon radio frequency inductively coupled plasma." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/27679.
Full textWegner, Thomas [Verfasser]. "Comprehensive study of the discharge mode transition in inductively coupled radio frequency plasmas / Thomas Wegner." Greifswald : Universitätsbibliothek Greifswald, 2016. http://d-nb.info/1122581629/34.
Full textMiller, Charles William. "Surface characterization of inductively coupled radio frequency plasma treated glassy carbons by x-ray photoelectron spectroscopy and scanning electron microscopy /." The Ohio State University, 1986. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487266362335601.
Full textMiller, Joseph. "Direct Multielemental Analysis of Solid Samples Using Laser Ablation Inductively Coupled Plasma Mass Spectometry and Pulsed Radio Frequency Glow Discharge Mass Spectrometry." TopSCHOLAR®, 2003. http://digitalcommons.wku.edu/theses/556.
Full textDukovský, Daniel. "Depozice bioaktivních keramických vrstev pomocí technologie RF-ICP." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-442600.
Full textLiang, Dong Cuan. "Development and characterization of atmospheric pressure radio frequency capacitively coupled plasmas for analytical spectroscopy." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/30590.
Full textScience, Faculty of
Chemistry, Department of
Graduate
O'Neill, Colm Philip. "Numerical simulations of plasma dynamics and chemistry in dual radio-frequency and pulse driven capacitively coupled atmosphere pressure plasmas." Thesis, Queen's University Belfast, 2015. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.696157.
Full textGreb, Arthur. "Dynamics of the plasma-surface interface in capacitively coupled radio-frequency oxygen plasmas : coupling numerical simulations with optical diagnostics." Thesis, University of York, 2013. http://etheses.whiterose.ac.uk/4980/.
Full textBlessington, Jon C. "Measurements of metastable atom density using energies and densities of energetic "fast" electrons detected in the electron energy distribution function associated with the afterglow plasma produced by a radio frequency inductively coupled plasma helium discharge." Morgantown, W. Va. : [West Virginia University Libraries], 2007. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=5214.
Full textTitle from document title page. Document formatted into pages; contains v, 36 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 21).
Kadetov, Victor A. "Diagnostics and modeling of an inductively coupled radio frequency discharge in hydrogen." [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972011854.
Full textO'Brien, Kathleen. "Inductively coupled radio frequency power transmission system for wireless systems and devices /." Aachen : Shaker, 2007. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=015959229&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.
Full textO'Brien, Kathleen [Verfasser]. "Inductively Coupled Radio Frequency Power Transmission System for Wireless Systems and Devices / Kathleen O'Brien." Aachen : Shaker, 2007. http://d-nb.info/1166516717/34.
Full textBandyopadhyay, Mainak. "Studies of an inductively coupled negative hydrogen ion radio frequency source through simulations and experiments." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972317309.
Full textZaka-ul-Islam, Mujahid. "A study of electron dynamics in a single and dual frequency inductively coupled plasma system." Thesis, Queen's University Belfast, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580132.
Full textDobkevicius, Mantas. "Modelling and design of inductively coupled radio frequency gridded ion thrusters with an application to Ion Beam Shepherd type space missions." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/413768/.
Full textButt, Munam. "Systemization of RFID Tag Antenna Design Based on Optimization Techniques and Impedance Matching Charts." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23064.
Full textGao, Guangning. "Modelling and diagnostics of atmospheric argon radio frequency inductively coupled plasma." 2004. http://link.library.utoronto.ca/eir/EIRdetail.cfm?Resources__ID=94738&T=F.
Full textShan, Yanguang. "A stochastic spray model for radio frequency inductively coupled plasmas." 2004. http://link.library.utoronto.ca/eir/EIRdetail.cfm?Resources__ID=80305&T=F.
Full text"MODELING OF HELICALLY APPLIED CURRENT TO THE INDUCTIVELY COUPLED RADIO FREQUENCY PLASMA TORCH IN TWO DIMENSIONS." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12604691/index.pdf.
Full textLin, Shi-Hao, and 林士豪. "Effects of different radio-frequency powers on inductively coupled plasma thermal chemical vapor deposition carbon thin films using ethene/nitrogen mixtures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/32819060933429947588.
Full text國立中興大學
材料科學與工程學系所
103
This study investigates the effects of different radio-frequency (rf) powers on the properties of carbon thin films prepared by thermal chemical vapor deposition (thermal CVD) enhanced with inductively coupled plasma. The residual gases in the thermal CVD process, thickness, microstructure, and electrical properties of carbon thin films are investigated by residual gases analyzer, field emission scanning electron microscopy, X-ray diffractometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, and four-points probe. Residual gases analysis results reveal that the main species in the gas phase contain H2, CH3, CH4, C2H, C2H2, HCN, and N2 (or C2H4), in which H2 decreases with increasing the rf power, but HCN increases with increasing the rf power. Experimental results indicate that the deposition rate of carbon thin films decreases with increasing the rf power; this is because the increase of HCN suppresses the deposition of carbon films. The crystallinity and the ordering degree of carbon thin films increase with increasing the rf power. This is because the decrease of the deposition rate enhances the rearrangement of carbon atoms, which results in the increase of average grain size of carbon films. The number of sp2 carbon sites decreases with increasing the rf power; this is because the increase of the hydrogen content suppresses the formation of the sp2C=C bonds. Finally, the electrical resistivity of carbon thin films increases with increasing the rf power, this is resulted from the decrease of the number of the sp2 C=C bonding.
Lai, Ti-Chuan, and 賴&;#24312;全. "Effects of different radio-frequency powers on the properties of carbon films by thermal chemical vapor deposition with inductively coupled plasma." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/67261956289012916889.
Full text國立中興大學
材料科學與工程學系所
98
This study investigates the effects of different radio frequency (rf) powers on the properties of carbon films prepared by thermal chemical vapor deposition enhanced with inductively coupled plasma. The film thickness, microstructure, surface morphology, and electrical property of carbon films were investigated by field emission scanning electron microscopy, X-ray diffraction spectrometer, Raman scattering spectrometer, atomic force microscopy, contact angle meter, and four-points probe. The results indicate that the deposition rate increases as the rf power increases. Because the peak intensity of the substrate is much stronger than that of the graphite, the mean crystallite size(LC)has no trend with respect to the rf power. The in-plane crystallite size(La)decreases as the rf power increases. The ID/IG value increases as the rf-power increases, so the structure of carbon films becomes more disorder. The surface roughness of carbon films first decreases with increasing the rf power, but then increases as the rf power is over 250 W. The contact angle of carbon films increases with increasing the rf power in the beginning, but then decreases as the rf power is over 300 W. The electrical resistivity of the carbon films first decreases with increasing the rf power, but then increases as the rf power is over 300 W.
Lai, Liang-Hsun, and 賴良訓. "Hermetically carbon-coated optical fibers prepared by thermal chemical vapor deposition enhanced with inductively coupled plasma of different radio-frequency powers." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/55956265831234840527.
Full text國立中興大學
材料科學與工程學系所
98
This study investigates the effects of different radio-frequency (rf) powers on the properties of carbon coatings on optical fibers that are prepared by thermal chemical vapor deposition enhanced with inductively coupled plasma. Methane (16 sccm) and nitrogen (4 sccm) were used as the precursor gases, and rf powers were set between 0 and 400 W. The deposition temperature, working pressure, and deposition time were set to 975 ℃, 4 kPa, and 2 hours, respectively. The coating thickness, microstructure, surface roughness, surface property, electrical property, and low-temperature morphology of carbon coatings were investigated by field emission scanning electron microscopy, X-ray diffraction spectrometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, atomic force microscopy, contact angle meter, four-points probe, and optical microscopy. The results indicate that the deposition rate increases as the rf power increases from 0 to 200 W, but the deposition rate decreases as the rf power exceeds 200 W. The mean crystallite size (Lc) increases with increasing the coating thickness, but the degree of ordering and in-plane crystallite size (La) decrease. Moreover, when the rf power increases, the carbon coatings have more sp2 carbon atoms and become graphite-like. The results also show that the surface roughness is inversely related to the water contact angle. As the rf power increases from 0 to 400 W, the electrical resistivity of carbon coatings decreases from 56.96 to 14.01 Ω‧μm. Finally, based on the low-temperature morphologies of carbon coatings, as the coating thickness exceeds 76 nm, the carbon coating has the ability to withstand thermal stress, and is good for use as a hermetical optical fiber coating.
Kang, Hui-Hsiang, and 康惠翔. "Effects of radio-frequency power on the properties of carbon thin films prepared by thermal chemical vapor deposition enhanced with remote inductively coupled plasma using ethylene/ammonia mixtures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/yc44h5.
Full text國立中興大學
材料科學與工程學系所
103
This study investigates the effects of different radio-frequency (rf) powers on the properties of carbon thin films that are prepared by thermal chemical vapor deposition enhanced with inductively coupled plasma (ICP). Ethylene (16 sccm) and Ammonia (4 sccm) were used as the precursor gases, and rf powers were set as 0W、100W、200W、300W and 400 W. The deposition temperature, working pressure, and deposition time were set to 1248 K, 4 kPa, and 2 hours. Alternatively, the residual gases, coating thickness, microstructure, surface roughness, surface property, and electrical property of carbon coatings were investigated by Residual gases analyzer, Field emission scanning electron microscopy, X-ray diffraction spectrometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, Atomic force microscopy, Contact angle meter, and Four-points probe, respectively. The results indicate that if the rf power increases from 0 to 400 W, the deposition rate decreases. This is because the H2 molecules or the carbon deposited in the ICP zone increases with the rf powers. The mean crystallite size (Lc) and in-plane crystallite size (La) increase with decreasing the coating thickness, and thus, the degree of ordering increases. Moreover, when the rf-power increases, sp2 carbon atoms easily become sp3 carbon atoms, so the content of sp2 atoms in the carbon coatings decreases. Besides, the results also show that when the rf- power increases, the water contact angle (water-proofing) decreases that is resulted from the decrease of sp2 carbon atoms; the surface roughness decreases from 0 to 200 W and then increasing. As the rf power increases from 0 to 400 W, the electrical resistivity of carbon thin films increases from 12.32 to 16.23 Ω‧μm. This is because the sp2 carbon atoms decrease with increasing the rf power.
Huang, Syuan-Wen, and 黃宣文. "Simulation Study of Capacitively Coupled Radio Frequency Silane/Hydrogen Plasma Discharges -Effect of Tailored Voltage Waveforms." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/rre4r8.
Full text國立清華大學
工程與系統科學系
107
Capacitively coupled plasma (CCP) has been widely employed for etching and deposition processes. The purpose of this study is to investigate the effect of Tailored Voltage Waveforms (TVWs) on the plasma characteristics of SiH4/H2 plasma, a fluid model based numerical simulation analysis is employed to investigate the fundamental discharge characteristics of the basic physical and chemical mechanisms occurring in the plasma reactor. The TVWs in this study divided into two categories: consist of two frequencies and four frequencies. The first type of TVWs are consist of two equal-voltage sine waves, which are the fundamental frequency 13.56 MHz and the second harmonic frequency 27.12 MHz. Different waveforms can be generated by tuning the relative phase between two frequencies. When the absolute values of positive and negative extremes in TVWs are different, the voltages across the two sheaths are different. At the phase θ = 45° and θ =135°, the difference between the absolutes of positive and negative extreme is maximum. Define these waveforms are V45 and V135, when phase angle are 45 and 135 degree. Simulation results show that when the waveform is V45, the sheath voltage in front of ground electrode is 63 and 49% lower than V135 and single frequency 13.56 MHz, respectively. It is because of the voltage in front of powered is bigger, resulting in higher electron temperature and power density at the side of power electrode. Due to the sheath voltage in front of ground electrode is smaller, thus decrease the potential gradient and ion bombardment effect. In addition to the analysis of the plasma characteristics. This study also analyzes the flux ratio of SiH2/SiH3 and H/SiH3 reaching the substrate. Simulation results showed that the SiH2/SiH3 ratio decreased approximately 50% when the waveform is V45 compared to V135. This is because the electron temperature at the ground electrode is lower when the waveform is V45, which in turn reduces the rate of formation of SiH2. However, the H/SiH3 ratio reaching the substrate is within 10% of the V135 and the single frequency 13.56 MHz. Since the defect density and crystallinity of the film directly proportional to flux ratio of SiH2/SiH3 and H/SiH3, respectively, the simulation results show that TVWs V45 can reduce the defect density in the film without affecting the crystallinity. The second type of TVWs consists of 13.56MHz and its second, third and fourth harmonic frequencies. When θ is 0 and π, the waveform define as “peak” and “valley”. Comparing with V45 and V135, these waveforms having a larger difference ratio between the absolute values of the positive voltage and the negative voltage. Simulation results show that the ion energy is the smallest in waveform “peak”, and the SiH2/SiH3 flux ratio reaching the substrate is 10% and 40% lower than V45 and single frequency 13.56 MHz, respectively. Therefore, the simulation results show that TVWs "peak" can reduce the defect density in the film but does not affect the crystallinity compared to V45 and single frequency 13.56 MHz. Finally, TVWs "peak" simulation results show that the decrease of flux ratio SiH2/SiH3 can explain the microstructure ratio decrease in the literature [3], so the film quality improve under the TVWs “peak”.
Heil, Brian George [Verfasser]. "Effects of the dynamic interaction between the plasma sheaths and bulk on electron heating in capacitively coupled radio-frequency discharges / von Brian George Heil." 2008. http://d-nb.info/990400093/34.
Full textKadetov, Victor A. [Verfasser]. "Diagnostics and modeling of an inductively coupled radio frequency discharge in hydrogen / von Victor Anatolievich Kadetov." 2004. http://d-nb.info/972011854/34.
Full textBandyopadhyay, Mainak [Verfasser]. "Studies of an inductively coupled negative hydrogen ion radio frequency source through simulations and experiments / Mainak Bandyopadhyay." 2004. http://d-nb.info/972317309/34.
Full textPeng, Chia-Lin, and 彭嘉玲. "Low Temperature Growth of Sic Thin Films on Si by High Frequency Inductively Coupled Plasma Enhanced Chemical Vapor Deposition." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/93346967550492063038.
Full text國立中山大學
物理學系
86
In this work, we set up an inductively-coupled-plasma-enhance-chemical-vapor-deposition system and grow SiC thin film on Si(1OO) and Si(l13) at low temperature and high frequency. The source gases were SiH4, CH4, and the gas mixed with Ar95% and H25%. The influence of the growth of thin films from different source gases flow ratio, different plasma RF power, different plasma RF frequency and different substrate temperature have been studied. By FTIR spectroscopy investigation, the carbon content on the thin films increases for more CH4 flow, higher frequency of Rf plasma and higher power of RF plasma during the deposition. For higher substrate temperature, the hydrogen content on the thin film decreases but the oxygen content on the thin film increases. The C/Si atom ratio on the thin films has been analyzed by EPMA. All samples were etched by the solution mixed with HF48%:HN0365%=10:3 As C/Si atom ratio of the thin films is above 0.267, Despite of that Si substrate is etched, the SiC film is acid resistive and can remain a smooth and reflective surface. XRD analyses show these thin films containing both of the SiC and Si amorphous structures. TEM analyses reveal that on the thin film the crystalline structures exist, when the C/Si atom ratio was above 0.515.