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Relevant bibliographies by topics / Quantum wells

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Academic literature on the topic 'Quantum wells'

Author: Grafiati

Published: 4 June 2021

Last updated: 29 July 2024

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Journal articles on the topic "Quantum wells"

1

Krause, Jeffrey L., David H. Reitze, Gary D. Sanders, Alex V. Kuznetsov, and Christopher J. Stanton. "Quantum control in quantum wells." Physical Review B 57, no. 15 (April 15, 1998): 9024–34. http://dx.doi.org/10.1103/physrevb.57.9024.

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Narimanov, E. E., and A. Douglas Stone. "Quantum chaos in quantum wells." Physica D: Nonlinear Phenomena 131, no. 1-4 (July 1999): 221–46. http://dx.doi.org/10.1016/s0167-2789(98)00229-2.

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Cohen, R. M., M. Kitamura, and Z. M. Fang. "Surface quantum wells." Applied Physics Letters 50, no. 23 (June 8, 1987): 1675–77. http://dx.doi.org/10.1063/1.97764.

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Himpsel, F. J. "Magnetic quantum wells." Journal of Physics: Condensed Matter 11, no. 48 (November 17, 1999): 9483–94. http://dx.doi.org/10.1088/0953-8984/11/48/309.

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Tralle, Igor, and Klaudiusz Majchrowski. "“Smart Design” of Quantum Wells and Double-Quantum Wells Structures." World Journal of Condensed Matter Physics 04, no. 01 (2014): 24–32. http://dx.doi.org/10.4236/wjcmp.2014.41004.

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Stemmer, Susanne, and Andrew J. Millis. "Quantum confinement in oxide quantum wells." MRS Bulletin 38, no. 12 (December 2013): 1032–39. http://dx.doi.org/10.1557/mrs.2013.265.

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Koch, M., R. Hellmann, S. T. Cundiff, J. Feldmann, E. O. Göbel, D. R. Yakovlev, A. Waag, and G. Landwehr. "Excitonic quantum beats in Quantum wells." Solid State Communications 88, no. 7 (November 1993): 515–19. http://dx.doi.org/10.1016/0038-1098(93)90040-t.

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Wenqin, Cheng, Huang Yi, Zhou Junming, Feng Wei, Wang Hezhou, She Weilong, Huang Xuguang, Lin Weizhu, Yu Zhenxin, and Xu Geng. "Transient photoluminescence spectra of GaAs/AlGaAs quantum wells, quantum well wires, and quantum well boxes." Chinese Physics Letters 7, no. 6 (June 1990): 284–87. http://dx.doi.org/10.1088/0256-307x/7/6/012.

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Katayama, Shin-ichi, and Takuma Tsuchiya. "Light emission of quantum-well-exciton polaritons in single quantum wells." Physica B: Condensed Matter 227, no. 1-4 (September 1996): 393–96. http://dx.doi.org/10.1016/0921-4526(96)00451-6.

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Wang, H., J. Shah, T. C. Damen, L. N. Pfeiffer, and J. E. Cunningham. "Femtosecond dynamics of excitons in quantum wells and quantum well microcavities." physica status solidi (b) 188, no. 1 (March 1, 1995): 381–86. http://dx.doi.org/10.1002/pssb.2221880135.

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Dissertations / Theses on the topic "Quantum wells"

1

Snelling, Michael. "Optical orientation in quantum wells." Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305526.

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Van, der Laak Nicole Kathleen. "Nano-modified InGaN quantum wells." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612841.

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Panda, Sudhira. "Quantum confined stark effect and optical properties in quantum wells." Thesis, Hong Kong : University of Hong Kong, 1998. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19324303.

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Starvrou, Vasilios N. "Theory of electron-optical phonon interactions in quantum wells and quantum well laser structures." Thesis, University of Essex, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285854.

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Dynes, James Francis. "Quantum optics in intersubband transitions in semiconductor quantum wells." Thesis, Imperial College London, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.413944.

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Plaut, Annette Sally. "Laser spectroscopy of semiconductor quantum wells." Thesis, University of Oxford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258014.

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Wood, A. C. G. "Strain effects in semiconductor quantum wells." Thesis, Durham University, 1990. http://etheses.dur.ac.uk/6263/.

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In this thesis the effect of the strain which is present in a lattice mismatched quantum well (QW) on the properties of the device is investigated. The k.p method is used within the envelope function framework to obtain the bandstructure and the wave functions of bound and unbound states in both lattice matched and strained quantum wells. The model includes spin and interband mixing effects. We show that the mixing of wave function character between adjacent subbands which occurs in a QW can be reduced in a strained structure, and that this can result in the ground state subband having a reduced effective mass. The effect of the reduction in mixing on the optical matrix elements for transitions between the conduction and valence bands is also investigated. A model is developed which enables the calculation of the gain and spontaneous emission spectra and threshold properties of a multiple quantum well (MQW) laser device. The model includes a full description of the non- parabolic subband dispersion and the variation of the optical matrix elements along the subbands, together with an energy dependent lifetime broadening of the spectrum. The model is used to compare the performance of strained and unstrained InGaAs/InP MQW devices operating at 1.3/µm and 1.55µm. The reduced valence band edge effective mass of the strained devices is shown to lead to a reduced threshold current, temperature dependence and linewidth enhancement factor and an enhanced gains lope. The unbound states of the well are used to investigate the bound- unbound intervalence band absorption rate in the above devices. The absorption coefficient for this process is found to be small (<2cm(^1)) in all the cases considered.

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Olaizola, S. M. "Ultrafast spectroscopy of InGaN quantum wells." Thesis, University of Sheffield, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.414678.

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Grevatt, Treena. "Exciton spin dynamics in quantum wells." Thesis, University of Southampton, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242274.

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Smeeton, Timothy Michael. "The nanostructures of InGaN quantum wells." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614901.

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Books on the topic "Quantum wells"

1

1957-, Li E. Herbert, ed. Semiconductor quantum wells intermixing. Amsterdam, The Netherlands: Gordon and Breach Science Publishers, 2000.

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2

Ruyter, Alfred. Quantum wells: Theory, fabrication, and applications. Hauppauge, NY: Nova Science Publishers, 2009.

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3

Rosencher, Emmanuel. Intersubband Transitions in Quantum Wells. Boston, MA: Springer US, 1992.

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4

NATO, Advanced Study Institute on Interfaces Quantum Wells and Superlattices (1987 Banff Alta ). Interfaces, quantum wells, and superlattices. New York: Plenum Press, 1988.

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Leavens, C. Richard, and Roger Taylor, eds. Interfaces, Quantum Wells, and Superlattices. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1045-7.

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6

Harrison, Paul, and Alex Valavanis. Quantum Wells, Wires and Dots. Chichester, UK: John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781118923337.

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Rosencher, Emmanuel, Børge Vinter, and Barry Levine, eds. Intersubband Transitions in Quantum Wells. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3346-7.

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Harrison, Paul. Quantum Wells, Wires and Dots. Chichester, UK: John Wiley & Sons, Ltd, 2005. http://dx.doi.org/10.1002/0470010827.

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Harrison, P. Quantum Wells, Wires and Dots. New York: John Wiley & Sons, Ltd., 2005.

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10

Roger, Taylor, ed. Interfaces, Quantum Wells, and Superlattices. Boston, MA: Springer US, 1988.

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Book chapters on the topic "Quantum wells"

1

Chow, Weng W., and Stephan W. Koch. "Quantum Wells." In Semiconductor-Laser Fundamentals, 166–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03880-2_6.

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Holtz, Per Olof, and Qing Xiang Zhao. "Quantum Wells." In Springer Series in Materials Science, 3–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18657-8_2.

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Park, Seoung-Hwan, and Doyeol Ahn. "Quantum Wells." In Handbook of Optoelectronic Device Modeling and Simulation, 365–96. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-11.

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Jovanović, V. D. "Strained Quantum Wells." In Quantum Wells, Wires and Dots, 219–41. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470010827.ch7.

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Delalande, C. "Semiconductor Quantum Wells." In Quantum Optics of Confined Systems, 181–99. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1657-9_6.

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Jovanović, V. D. "Strained quantum wells." In Quantum Wells, Wires and Dots, 223–48. Chichester, UK: John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781118923337.ch7.

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7

Davies, Paul C. W., and David S. Betts. "One-dimensional delta wells." In Quantum Mechanics, 30–36. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4899-2999-0_3.

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8

Califano, M. "Quantum dots." In Quantum Wells, Wires and Dots, 279–302. Chichester, UK: John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781118923337.ch9.

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9

Davis, Jeffrey, and Chennupati Jagadish. "ZnO/MgZnO Quantum Wells." In Springer Series in Materials Science, 413–34. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_14.

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10

Ivchenko, Eougenious L., and Grigory Pikus. "Quantum Wells and Superlattices." In Springer Series in Solid-State Sciences, 1–8. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-97589-9_1.

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Conference papers on the topic "Quantum wells"

1

Wilson, D. W., E. N. Glytsis, and T. K. Gaylord. "Electron waveguiding in quantum wells, voltage- induced quantum wells, and quantum barriers." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thf5.

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Recent experiments have produced ballistic electron transport over micron lengths in semiconductor 2-D electron gas (2DEG) systems. This has made possible the demonstration of electron devices that exhibit impressive optical like behavior.1-3 In these devices, the quantum well at the 2DEG interface acts as a slab waveguide for ballistic electron waves. We show how finite- potential heterostructure wells, homostructure voltage-induced wells, and heterostructure barriers can act as electron slab waveguides. We find that the waveguiding in all these structures is described by a single dispersion relation and can occur at energies above all band edges. The guided-mode cutoffs, electron velocity, effective mass, density of states, and ballistic current density are determined. A multiple layer theory is developed to analyze wells and barriers with arbitrary potential energy profiles. The maximum ballistic guided current flowing in a given direction for a ten-monolayer Ga0.75Al0.25As/GaAs/- Ga0.9Al0.1. As waveguide is found to be 2.3 mA/μm of waveguide width. This relatively large value suggests that interconnecting multiple ballistic electron devices through a single slab waveguide may be feasible.

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2

Bar-Joseph, I., J. E. Zucker, B. I. Miller, U. Koren, and D. S. Chemla. "Compositional Dependence of the Quantum Confined Stark Effect in Quaternary Quantum Wells." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tub1.

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Quantum well modulators require strict control over the wavelength of the exciton transition in order to minimize insertion loss and maximize voltage sensitivity at the desired wavelength of operation. Within the quaternary material system In x Ga1− x As y P1− y , there are two parameters which can be varied in order to tune the bandgap: the thickness of the quantum well layer and its composition. Tuning the bandgap by means of well size alone is of limited usefulness since the rate at which the exciton energy shifts with field drastically decreases as well width decreases 1. In this paper, we demonstrate for the first time that the compositional flexibility of quaternary quantum wells can be used to obtain field-induced shifts larger than those obtainable in InGaAs quantum wells, yielding enhanced electroabsorption and electrorefraction. We show that quaternary devices can fill a serious need for quantum well optical modulators in the wavelength range 1.3 µm to 1.55 µm for optical communications.

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3

Göbel, E. O. "Coherent Exciton Effects in Quantum Wells." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/qo.1993.qthc.1.

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Resonant excitation of excitons by short optical laser pulses creates a macroscopic polarization which decays in the simplest case with a constant rate described by the dephasing time T2. In semiconductors and semiconductor quantum well structures this dephasing time is of the order of 1ps. Thus, subpicosecond time resolution is required to study coherent exciton effects in quantum wells. We have applied femtosecond Four-Wave-Mixing (FWM) spectroscopy in our studies. As more than one exciton state is excited simultaneously, the coherent dynamics and interaction of these exciton states can be studied.

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4

Riblet, P., AR Cameron, and A. Miller. "Spin-Gratings and In-Well Carrier Transport Measurements in GaAs/AlGaAs Multiple Quantum Wells." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/qo.1997.qthe.3.

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We have recently demonstrated [1] that transient electron spin gratings created by cross-polarised excitation pulses at a wavelength resonant with the heavy hole exciton, can provide a new and unique way of measuring in-well electron drift mobilities in semiconductor multiple quantum well structures. This compares with the usual transient grating method in which only the ambipolar diffusion coefficient can be determined [2]. A comparison of concentration and spin grating decay rates allows the direct measurement of both the electron and hole drift mobilities in the same sample. In this work we extend these measurements to GaAs/AlGaAs multiple quantum wells with different well widths and compare results obtained under conditions of exciton saturation and broadening.

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5

Heberle, Albert P., Wolfgang W. Ruehle, and Klaus Koehler. "Tunneling between quantum wells." In Semiconductors '92, edited by Robert R. Alfano. SPIE, 1992. http://dx.doi.org/10.1117/12.137687.

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BIBIK, A. I., M. O. DZERO, B. GERLACH, and M. A. SMONDYREV. "POLARONS IN QUANTUM WELLS." In Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0006.

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7

Clausen, E. M., H. G. Craighead, J. P. Harbison, L. M. Schiavone, B. Van Der Gaag, and L. Florez. "Cathodoluminescence Studies of Quantum Dots Etched from Single Quantum Well GaAs/AlGaAs." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tue6.

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High resolution electron beam lithography combined with reactive ion etching has enabled the creation of GaAs structures a few tens of nanometers in lateral dimension.1 There have been several studies of luminescence from GaAs "quantum dot and wire" structures. However, reports differ as to the luminescence efficiency, peak shifts and spectral character. Photoluminescence studies of structures etched from GaAs/AlGaAs quantum well material have shown that nonradiative surface recombination typically results in no observable luminescence for quantum dots smaller than ~ 60 nm.2,3 Multiple quantum well wires have been fabricated with dimensions as small as 20 nm in cross section which still luminesce with an efficiency not degraded by the fabrication process.4 Photoluminescence measurements have indicated a spatial quantization in dots as large as 250 nm.5 Other photoluminescence measurements of various size dots show no decrease in luminescence efficiency,2 compared to unpatterned material and different spectral structure attributed to quantization effects for diameters around 60 nm.6 In contrast, Forchel et al. monitored the GaAs free exciton emission from a 4 nm thick quantum well etched into wires and observed a marked decrease in luminescence intensity with decreasing wire width.7

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8

Forrest, S. R., E. I. Haskal, Z. Shen, and P. E. Burrows. "Exciton Confinement in Organic Multiple Quantum Wells." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/qo.1995.qthb2.

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It has recently been shown that ordered, organic thin films of planar stacking molecules can be grown with monolayer uniformity and control over large substrate distances by the ultrahigh vacuum process of organic molecular beam deposition (OMBD). Due to this ability to grow films with such a high degree of order, it was demonstrated by So, et al1 , 2 that multiple quantum well stacks consisting of alternating layers of the archetype compounds, 3,4,9,10 perylenetetracarboxylic dianhydridc (PTCDA) and 3,4,7,8 naphthalenetetracarboxylic dianhydride (NTCDA) exhibit exciton quantum confinement That is, energy shifts in the absorption spectrum, as well as time resolved photolumincscence indicates systematic changes with layer thickness, as the thickness is reduced from 500Å to 10Å. While these early data were compelling, they opened up many questions as to the nature of excitons in closely packed organic molecular systems. Hence, in this work, we have extended this early investigation by measuring the electroabsorption, the absorption and the fluorescence spectra of organic MQW stacks consisting of PTCDA+NTCDA, as well as 3,4,9,10 peryleneietracarboxylic-bis-benzimidazole (PTCBI)+NTCDA. These new investigations provide further information essential to understanding the nature of excitons in these van der Waals-bonded molecular solids.

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9

Lorenz, K., A. Redondo-Cubero, M. B. Lourenço, M. C. Sequeira, M. Peres, A. Freitas, L. C. Alves, et al. "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells." In SPIE OPTO, edited by Jen-Inn Chyi, Hiroshi Fujioka, Hadis Morkoç, Yasushi Nanishi, Ulrich T. Schwarz, and Jong-In Shim. SPIE, 2016. http://dx.doi.org/10.1117/12.2211429.

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10

VanEck, T. E., S. Niki, P. Chu, W. S. C. Chang, H. H. Wieder, A. J. Mardinly, K. Aron, and G. A. Hansen. "A Strained Superlattice Buffer Layer for InGaAs/GaAs Quantum Wells." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.wa3.

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Good electroabsorption has been demonstrated recently in InGaAs/GaAs quantum wells.1,2 A structure described previously1 had only ten quantum wells, and although InGaAs and GaAs are not lattice-matched, the total strain energy in this structure was small enough that the quantum wells grew pseudomorphically, i. e., the InGaAs was strained so that its in-plane lattice constant was equal to the lattice constant of the GaAs substrate. This structure showed good electroabsorption characteristics, but only 6% modulation depth. For a device with 50% modulation depth, about 100 quantum wells are required. However, structures containing only 20 quantum wells appeared to be non-pseudomorphic. Thus 100 quantum wells can not be grown pseudomorphic to the substrate, yet they must be grown with no dislocations to have good electroabsorption characteristics. This can be accomplished by growing the quantum well structure on top of a thick, uniform buffer layer with a lattice constant equal to the weighted average of the lattice constants of the quantum well and buffer layers. Lattice relaxation by means of dislocations occurs only in the buffer layer, and both quantum wells and barriers grow pseudomorphic to the buffer layer rather than the substrate.3 A similar result can be achieved by eliminating the buffer layer; the lattice relaxation occurs in the first few quantum wells, and the rest are dislocation-free.2,4,5 We have employed this method to produce a structure with 80 quantum wells which exhibits good electroabsorption characteristics. We have also grown 50 quantum wells on a strained superlattice buffer layer consisting of alternating layers of InGaAs and GaAs, each 20Å thick. The purpose of this is to remove the dislocations from the quantum wells, which are optically active, and place them in the inactive superlattice.

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Reports on the topic "Quantum wells"

1

West, L. C. Spectroscopy of GaAs quantum wells. Office of Scientific and Technical Information (OSTI), July 1985. http://dx.doi.org/10.2172/5970233.

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2

Kroemer, Herbert. New Kinds of Quantum Wells. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada230346.

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Harff, N. E., J. A. Simmons, J. F. Klem, G. S. Boebinger, L. N. Pfeiffer, and K. W. West. Magnetic breakdown in double quantum wells. Office of Scientific and Technical Information (OSTI), August 1996. http://dx.doi.org/10.2172/270798.

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4

Williams, M., C. Hollars, T. Huser, N. Jallow, A. Cochran, and R. Bryant. Spectroscopy of Single Free Standing Quantum Wells. Office of Scientific and Technical Information (OSTI), March 2006. http://dx.doi.org/10.2172/883615.

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Lai, Chih-Wei Eddy. Spatially indirect excitons in coupled quantum wells. Office of Scientific and Technical Information (OSTI), March 2004. http://dx.doi.org/10.2172/887430.

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6

Cundiff, Steven T. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots. Office of Scientific and Technical Information (OSTI), May 2016. http://dx.doi.org/10.2172/1250541.

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Goodnick, Stephen M. High Energy Electron Injection into Semiconductor Superlattices, Quantum Wells, and Quantum Wires. Fort Belvoir, VA: Defense Technical Information Center, January 1992. http://dx.doi.org/10.21236/ada251860.

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Hu, Qing. Far-Infrared (THz) Lasers Using Multiple Quantum Wells. Fort Belvoir, VA: Defense Technical Information Center, August 1995. http://dx.doi.org/10.21236/ada299452.

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Narayanamurti, Venkatesh. Ballistic Electron Emission Spectroscopy Study of Transport through Semiconductor Quantum Wells and Quantum Dots. Fort Belvoir, VA: Defense Technical Information Center, September 1997. http://dx.doi.org/10.21236/ada329782.

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Cundiff, Steven. Final Report for Optical Two-Dimensional Spectroscopy of Semiconductor Quantum Wells and Quantum Dots. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1577852.

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