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Journal articles on the topic 'Quantum well growth methodology'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Md Sahar, Mohd Ann Amirul Zulffiqal, Zainuriah Hassan, Sha Shiong Ng, Way Foong Lim, Khai Shenn Lau, Ezzah Azimah Alias, Mohd Anas Ahmad, Nur Atiqah Hamzah, and Rahil Izzati Mohd Asri. "Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes." Microelectronics International 38, no. 3 (July 19, 2021): 119–26. http://dx.doi.org/10.1108/mi-02-2021-0017.

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Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

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Corea, Mónica De la Luz. "Optical properties of CdSe nanoparticles synthesized by hot injection in air." Revista Mexicana de Física 64, no. 3 (April 30, 2018): 275. http://dx.doi.org/10.31349/revmexfis.64.275.

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The hot injection technique is used to produce CdSe nanoparticles with quantum dot properties. Several reports have considered an inert atmosphere (nitrogen) as necessary for a successful synthesis, which complicates the experimental set-up. In this work, CdSe nanoparticles were synthesized by hot injection in air instead of in nitrogen, simplifying the experimental set-up. To avoid undesirable interactions with oxygen, well-defined concentrations of the organic species were used during the synthesis, but air still influenced the growth rate of the particles. To establish a comparison, the same experimental methodology was applied in nitrogen and in air. The nanoparticles synthesized in air showed a higher growth rate than those synthesized in nitrogen at the same reaction times. Additionally, similar optical behaviors and band gaps were observed in both cases, showing that an inert atmosphere is not necessary for the synthesis of quantum dots made of CdSe nanoparticles.

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Bishay, Peter L., Bhavin Sampat, Jan Sladek, Ernian Pan, and Vladimir Sladek. "Effect of Lattice Mismatch Strain Grading on the Electromechanical Behavior of Functionally Graded Quantum Dots." Key Engineering Materials 759 (January 2018): 71–75. http://dx.doi.org/10.4028/www.scientific.net/kem.759.71.

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A fully coupled thermo-electro-mechanical models of cylindrical and truncated conical GaN/AlN Functionally Graded Quantum Dot (FGQD) systems with and without WL are analyzed in this study to determine the effect of lattice mismatch strain grading on the electromechanical behavior of the FGQD system. This has a technological and fundamental importance because the production methodology adopted for manufacturing QDs enables the composition of the QD material to be graded in the growth direction, so the material properties as well as the induced mismatch strain between the QD and the carrier matrix are accordingly graded. The power law is used to describe the grading function. Based on the obtained results, grading of material properties and lattice mismatch strain have significant effect on the distribution of the electromechanical quantities inside the QD and can be used as another tuning parameter in the design of QD systems.

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Bishay, Peter L., Jan Sladek, Ernian Pan, and Vladimir Sladek. "Analysis of Functionally Graded Quantum-Dot Systems with Graded Lattice Mismatch Strain." Journal of Computational and Theoretical Nanoscience 15, no. 2 (February 1, 2018): 542–50. http://dx.doi.org/10.1166/jctn.2018.7120.

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The production methodology of alloyed quantum-dot (QD) structures introduced a new design degree of freedom for QD arrays which is the grading of the material composition in the QD growth direction. This enables QDs of same size to generate different colors when exposed to blue light based on the grading of each QD. The grading of the material composition affects the material properties as well as the lattice mismatch strain between the QDs and the host matrix. Previous studies modeled graded QDs by just considering graded lattice mismatch strain while the material properties were kept uniform. Because these previous studies were seeking analytical solutions, including a graded material property model would have complicated the solutions. In this paper, a fully-coupled thermo-electro-mechanical finite element model of a cylindrical functionally graded QD (FGQD) in a host piezoelectric matrix is developed with both graded material properties and graded lattice mismatch strain. Different cases are considered corresponding to separately increasing and decreasing the strength of the lattice mismatch strain and the material properties in the QD thickness direction. The grading function is expressed using the power law that enables fractional exponents. The results show the effect of grading on the electromechanical quantities and demonstrate the flexibility that grading can add to the design of QD arrays. This work contributes to the development of quantum dots with "grading-dependent color" rather than the traditional "size-dependent color." The model can be easily extended to other cases such as different shapes of QDs, addition of wetting layer, and any applied thermo-electro-mechanical loads.

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Garg, Kailash Chandra, and Suresh Kumar. "Bibliometric assessment of the global research output inJatropha curcas Linnas reflected by papers indexed in Science Citation Index-Expanded." Performance Measurement and Metrics 20, no. 1 (February 4, 2019): 17–26. http://dx.doi.org/10.1108/pmm-07-2018-0019.

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PurposeThe purpose of this paper is to examine the quantum of research papers and the citations these papers received for the plantJatropha curcas Linn.Design/methodology/approachArticles published onJatropha curcas Linnduring 1987–2016 were downloaded from Science Citation Index-Expanded (SCIE) by using the keyword Jatropha* on October 18, 2017. The search resulted in 4,276 records in all. The authors analyzed only 4,111 documents which were published as review articles, research articles and proceeding papers using the complete count methodology. The data were analyzed to examine the pattern of growth of output, most prolific countries, institutions and authors. It also identified highly cited authors and journals used for communicating research results.FindingsThe study indicates that India, China and Brazil are the main contributors to the field and the pattern of growth indicates a steep rise in publication output especially in the last block of 2015–2016. Most of the prolific institutions and authors were also located in these countries. However, the impact of output was different from the pattern of output. The publication output is scattered in more than 1,000 journals published from different parts of the globe.Originality/valueThe plant ofJatropha curcas Linnis a highly useful plant as a source of biofuel energy. This is the second study in English language on this plant and has used a large set of publication data as compared to the first. The findings of the study may be useful for policy makers as well as for researchers working in the field of biofuel energy.

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Schär, Christoph, Oliver Fuhrer, Andrea Arteaga, Nikolina Ban, Christophe Charpilloz, Salvatore Di Girolamo, Laureline Hentgen, et al. "Kilometer-Scale Climate Models: Prospects and Challenges." Bulletin of the American Meteorological Society 101, no. 5 (May 1, 2020): E567—E587. http://dx.doi.org/10.1175/bams-d-18-0167.1.

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Abstract Currently major efforts are underway toward refining the horizontal resolution (or grid spacing) of climate models to about 1 km, using both global and regional climate models (GCMs and RCMs). Several groups have succeeded in conducting kilometer-scale multiweek GCM simulations and decadelong continental-scale RCM simulations. There is the well-founded hope that this increase in resolution represents a quantum jump in climate modeling, as it enables replacing the parameterization of moist convection by an explicit treatment. It is expected that this will improve the simulation of the water cycle and extreme events and reduce uncertainties in climate change projections. While kilometer-scale resolution is commonly employed in limited-area numerical weather prediction, enabling it on global scales for extended climate simulations requires a concerted effort. In this paper, we exploit an RCM that runs entirely on graphics processing units (GPUs) and show examples that highlight the prospects of this approach. A particular challenge addressed in this paper relates to the growth in output volumes. It is argued that the data avalanche of high-resolution simulations will make it impractical or impossible to store the data. Rather, repeating the simulation and conducting online analysis will become more efficient. A prototype of this methodology is presented. It makes use of a bit-reproducible model version that ensures reproducible simulations across hardware architectures, in conjunction with a data virtualization layer as a common interface for output analyses. An assessment of the potential of these novel approaches will be provided.

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Matyushok, Vladimir M., Vera A. Krasavina, and Sergey V. Matyushok. "Global artificial intelligence systems and technology market: formation and development trends." RUDN Journal of Economics 28, no. 3 (December 15, 2020): 505–21. http://dx.doi.org/10.22363/2313-2329-2020-28-3-505-521.

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Every day more and more companies rely on artificial intelligence, from small startups to large companies, among which stand out not only the IT giants Google, Microsoft, Facebook, IBM, but even those that seemingly far from this topic - for example, General Motors and Boeing created a joint laboratory for AI research. It becomes obvious that AI technology is the real mainstream of our time. The article examines the global market for artificial intelligence systems and technologies. The authors described the peculiarities of the formation of this market and the main trends and segments in its development. The goal of research - identify the dynamics, features and trends of the global market for artificial intelligence systems and technologies. The methodology of system analysis, the dialectical method of scientific cognition, methods of historical, logical and comparative analysis are used. The concept of artificial intelligence has been systematized, the dynamics of the global market for artificial intelligence systems and technologies have been revealed, as well as in the regional context. The relationship between its dynamics and the sharp jump in performance of information processing algorithms, which became possible due to the fast computer based on GPUs, an avalanche-like data growth and the emergence of almost unlimited possibilities for storage and technology access, has been detected. It is shown that the global market for artificial intelligence technologies is in a phase of inflated expectations and with a high enough level of risk for investors. The main trends and segments in the development of the global market for artificial intelligence systems and technologies have been identified. These include deep learning technologies, the convergence of AI technologies with other technologies such as analytics, ERP, the Internet of Things, blockchain, and even quantum computing, which has the greatest impact, the development of cognitive intelligence systems, and the creation of a cognitive computer. It is shown that business leaders consider AI fundamental and absolutely necessary for the development of future business opportunities. It has been proven that the rapid development of AI systems and technologies is not just another technological innovation, but the technological platform of the Fourth Industrial Revolution, which is associated with hopes for accelerating the economic growth of the world economy, increasing the competitiveness of countries and companies.

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Rajagopalan, Jayaraman, and Sam Solaimani. "Lean management in Indian industry: an exploratory research study using a longitudinal survey." International Journal of Lean Six Sigma 11, no. 3 (September 18, 2019): 515–42. http://dx.doi.org/10.1108/ijlss-12-2017-0140.

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Purpose The practice of lean management (LM) principles has given firms, from a variety of sectors, quantum jumps in productivity and performance. India is at the cusp of a major leap in economic growth, and adoption of LM is a must for ramping up the rate of growth of the GDP speedily, if the government is really intent on achieving its objective of becoming the third or fourth largest economy soon. This paper aims to study the status of implementation of LM in the LM Leaders (LML’s) in the Indian industry, to understand if they are ready to accept the challenges ahead. Design/methodology/approach This is an exploratory research study. To study the level of maturity of LM in Indian industry, the authors selected the LM Leaders in the Indian industry (LMLII). By using a well-known survey instrument – the Lean Self -Assessment Tool (LESAT), Version 2.0 – designed and developed by MIT, the authors conducted a longitudinal survey over the period 2013 to 2016, a four-year duration. Surveys were conducted every year. Findings Survey results show an improvement in the overall average of “current state” scores between the years 2013 and 2016, indicating that LMLII’s have improved upon their LM adoption during these years. However, there is a striking gap between “where the industry wants to be” and “where it currently is”. This could drive future improvements. Based on the survey results, this paper draws lessons and proposes action points on how to improve the adoption and diffusion of LM principles and practices in the LMLII. Factors which need to be addressed to reinvigorate the practice of LM have been identified and classified as urgent, immediate and short term. Research limitations/implications While many “snapshot” studies have been done to study LM in Indian industry, a longitudinal study has not been done. Moreover, previous studies administer questionnaires to one company (case study method) or a group of companies in a sector of the industry. Thus, there was a research gap. A longitudinal study will help us take a holistic approach. In addition, studying LMLII will provide data from the most serious adopters of LM. Both these will add value to the current research on LM in Indian industry. The results will also help the LMLII’s to further improve the practice of LM in a systematic and rigorous way. However, as the study is limited to the LMLII, it would not be possible to apply the knowledge to the Indian industry as a whole. For doing so, one would need a larger, more representative sample. Practical implications Using this paper, LMLII’s can develop practices which will improve customer satisfaction and reduce waste in manufacturing. They can ramp up LM intensity to make further quantum jumps in performance. Social implications LM, in addition to improving the output/input ratio (producing more for less), also emphasises waste reduction, customer satisfaction and efficient operations. All these three factors are essential for sustainable and happy society. Originality/value The work is original. This is the first longitudinal survey of lean practices in the Indian industry to study cross-sectional practices, and the results will propel the Indian industry to intensify the practice of LM.

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9

Grützmacher, Detlev. "Growth and analysis of quantum well structures." Journal of Crystal Growth 107, no. 1-4 (January 1991): 520–30. http://dx.doi.org/10.1016/0022-0248(91)90515-7.

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Rajagopalan, Jayaraman. "An empirical longitudinal study of adoption of lean management in India." TQM Journal 32, no. 6 (May 15, 2020): 1285–306. http://dx.doi.org/10.1108/tqm-11-2019-0269.

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PurposeTo identify the factors that need to be addressed by Indian industry to steeply ramp up its production and productivity in the coming years, so as to achieve the goal of the country becoming a 5 trillion dollar economy by 2025.Design/methodology/approachLean Management Leaders in Indian Industry (LMLII), i.e. those companies in India who are well known for having adopted TQM, BE and Lean methods for many years, and achieved success in their business) in Indian industry were selected and surveys were done between 2013 and 2017, to assess the status of LM adoption, by using the LESAT (version 2.0) survey tool. A longitudinal empirical study has been done, over a period of five years, so that the identification of factors is based on a few years’ data rather than a one year, spot-check or snapshot view. A new method, titled the ‘Three Step Reverse Exploratory Factor Analysis Procedure (TSREP)’, has been attempted to identify the ‘root causes’.FindingsLMLII's have improved in their adoption of LM over these years by about 10%. The root causes that can help in further advancement in adoption have been identified and classified under six component factors.Research limitations/implicationsThe identification of LMLII's has been done based on the experience and views of experts in TQM/ BE/ Lean in India. Since this is a first of such study (viz., the term LMLII is being defined and used for the first time), this methodology has been adopted. However, in future, a systematic way to assess the criteria for LMLII's could be designed. Secondly, the sample size of LMLII's needs to be fully representative of the industry.Practical implicationsBy using the results of this study, Indian companies can accelerate their LM adoption programmes, leading to quantum jumps in production and productivity, so as to achieve the 5 trillion USD economy by 2025. The practical implications are immense.Social implicationsSince LM is a bundle of Lean, TQM and BE, companies adopting LM will, due to the inclusion of waste reduction through 5S, JIT, kaizens and continuous improvement, address the Triple Bottom Line (TBL) protocol of the UN. TBL has comprehensive implications on society and environment, climate change and sustainability of business.Originality/valueThis work is original, at least in three ways. First, in the use of the concept of ‘LML’. Second, there is no previous longitudinal study done on Indian industry in LM. Third, the TSREP is being used for the first time. The value of this research is in its findings, in the identification of key factors for future growth and the use of a novel technique for improving upon the accuracy, analytical rigour and legitimacy of the results.

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Fischer, Inga A., Torsten Wendav, Lion Augel, Songchai Jitpakdeebodin, Filipe Oliveira, Alessandro Benedetti, Stefan Stefanov, et al. "Growth and characterization of SiGeSn quantum well photodiodes." Optics Express 23, no. 19 (September 16, 2015): 25048. http://dx.doi.org/10.1364/oe.23.025048.

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12

Thompson, Phillip E., David Godbey, Karl Hobart, Evan Glaser, Thomas Kennedy, Mark Twigg, and David Simons. "Parametric Investigation ofSi1-xGex/SiMultiple Quantum Well Growth." Japanese Journal of Applied Physics 33, Part 1, No. 4B (April 30, 1994): 2317–21. http://dx.doi.org/10.1143/jjap.33.2317.

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House, J. L., D. J. Dougherty, G. S. Petrich, L. A. Kolodziejski, E. P. Ippen, and G. C. Hua. "Growth and characterization of single quantum well structures." Applied Surface Science 104-105 (September 1996): 472–78. http://dx.doi.org/10.1016/s0169-4332(96)00189-4.

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Mukai, Seiji, Masanobu Watanabe, Hideo Itoh, Hiroyoshi Yajima, Tomomi Yano, and Jong-Chun Woo. "LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures." Japanese Journal of Applied Physics 28, Part 2, No. 10 (October 20, 1989): L1725—L1727. http://dx.doi.org/10.1143/jjap.28.l1725.

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Chen, Zonggui, Dianzhau Sun, Jiben Liang, Zhongying Xu, Yunheng Huang, Weikun Ge, and Meiying Kong. "MBE growth of quantum well and superlattice structures." Superlattices and Microstructures 3, no. 3 (January 1987): 325–28. http://dx.doi.org/10.1016/0749-6036(87)90080-2.

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Imam, N., E. N. Glytsis, T. K. Gaylord, Kwong-Kit Choi, P. G. Newman, and L. Detter-Hoskin. "Quantum-well infrared photodetector structure synthesis: methodology and experimental verification." IEEE Journal of Quantum Electronics 39, no. 3 (March 2003): 468–77. http://dx.doi.org/10.1109/jqe.2002.808162.

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Yang, G. F., P. Chen, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, et al. "Temperature dependent growth of InGaN/GaN single quantum well." Superlattices and Microstructures 52, no. 3 (September 2012): 349–56. http://dx.doi.org/10.1016/j.spmi.2012.05.018.

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Mishurnyi, V. A., F. de Anda, V. A. Elyukhin, and I. C. Hernandez. "Growth of Quantum-Well Heterostructures by Liquid Phase Epitaxy." Critical Reviews in Solid State and Materials Sciences 31, no. 1-2 (August 2006): 1–13. http://dx.doi.org/10.1080/10408430500538695.

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Shen, Aidong, Arvind Pawan Ravikumar, Guopeng Chen, Kuaile Zhao, Adrian Alfaro-Martinez, Thor Garcia, Joel de Jesus, Maria C. Tamargo, and Claire Gmachl. "MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, no. 3 (May 2013): 03C113. http://dx.doi.org/10.1116/1.4794383.

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Miyamoto, Tomoyuki, Kanji Takeuchi, Takeo Kageyama, Fumio Koyama, and Kenichi Iga. "GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy." Japanese Journal of Applied Physics 37, Part 1, No. 1 (January 15, 1998): 90–91. http://dx.doi.org/10.1143/jjap.37.90.

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Meiying, Kong, Sun Dianzhau, Liang Jiben, Huang Yunneng, and Zhen Yiepen. "Growth of high quality gaas-aigaas quantum well structures." Journal of Electronic Materials 16, no. 6 (November 1987): 417–21. http://dx.doi.org/10.1007/bf02655495.

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Koguchi, Nobuyuki, Satoshi Takahashi, and Toyohiro Chikyow. "New MBE growth method for InSb quantum well boxes." Journal of Crystal Growth 111, no. 1-4 (May 1991): 688–92. http://dx.doi.org/10.1016/0022-0248(91)91064-h.

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Horváth, Zs J., L. Dózsa, Vo Van Tuyen, B. Pődör, Á. Nemcsics, P. Frigeri, E. Gombia, R. Mosca, and S. Franchi. "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures." Thin Solid Films 367, no. 1-2 (May 2000): 89–92. http://dx.doi.org/10.1016/s0040-6090(00)00701-x.

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Huo Da-Yun, Shi Zhen-Wu, Zhang Wei, Tang Shen-Li, and Peng Chang-Si. "Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector." Acta Physica Sinica 66, no. 6 (2017): 068501. http://dx.doi.org/10.7498/aps.66.068501.

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Zhou, Wu, Yu-Yang Zhang, Jianyi Chen, Dongdong Li, Jiadong Zhou, Zheng Liu, Matthew F. Chisholm, Kazu Suenaga, Sokrates T. Pantelides, and Kian Ping Loh. "Dislocation-Driven Growth of Two-Dimensional Lateral Quantum Well Superlattices." Microscopy and Microanalysis 24, S1 (August 2018): 88–89. http://dx.doi.org/10.1017/s1431927618000934.

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Fissel, A., U. Kaiser, B. Schröter, W. Richter, and F. Bechstedt. "MBE growth and properties of SiC multi-quantum well structures." Applied Surface Science 184, no. 1-4 (December 2001): 37–42. http://dx.doi.org/10.1016/s0169-4332(01)00473-1.

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Nakatani, Y., Y. K. Zhou, M. Sano, S. Emura, S. Hasegawa, and H. Asahi. "Growth and Characterization of GaDyN/AlGaN Multi-Quantum Well Structures." e-Journal of Surface Science and Nanotechnology 10 (2012): 499–502. http://dx.doi.org/10.1380/ejssnt.2012.499.

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Zhou, Wu, Yu-Yang Zhang, Jianyi Chen, Dongdong Li, Jiadong Zhou, Zheng Liu, Matthew F. Chisholm, Sokrates T. Pantelides, and Kian Ping Loh. "Dislocation-driven growth of two-dimensional lateral quantum-well superlattices." Science Advances 4, no. 3 (March 2018): eaap9096. http://dx.doi.org/10.1126/sciadv.aap9096.

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Williams, R. Stanley, David K. Shuh, and Yusaburo Segawa. "Growth and luminescence spectroscopy of a CuCl quantum well structure." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (May 1988): 1950–52. http://dx.doi.org/10.1116/1.575212.

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Huang, Wenjun, Jianliang Huang, Yanhua Zhang, Yulian Cao, Chengcheng Zhao, Biying Nie, Xiaolu Guo, and Wenquan Ma. "Growth and Electron Mobility of Inverted InAs/GaSb Quantum Well." Journal of Nanoscience and Nanotechnology 18, no. 11 (November 1, 2018): 7532–35. http://dx.doi.org/10.1166/jnn.2018.16051.

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Fuyuki, Takuma, Yoriko Tominaga, Kunishige Oe, and Masahiro Yoshimoto. "Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures." Japanese Journal of Applied Physics 49, no. 7 (July 5, 2010): 070211. http://dx.doi.org/10.1143/jjap.49.070211.

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Podpirka, Adrian A., Javad Shabani, Michael B. Katz, Mark E. Twigg, Shawn Mack, Chris J. Palmstrøm, and Brian R. Bennett. "Growth and characterization of (110) InAs quantum well metamorphic heterostructures." Journal of Applied Physics 117, no. 24 (June 28, 2015): 245313. http://dx.doi.org/10.1063/1.4922985.

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Kasai, J., T. Kitatani, K. Adachi, K. Nakahara, and M. Aoki. "Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers." Journal of Crystal Growth 301-302 (April 2007): 545–47. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.230.

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Wang, C. A., and H. K. Choi. "OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers." Journal of Electronic Materials 26, no. 10 (October 1997): 1231–36. http://dx.doi.org/10.1007/s11664-997-0025-8.

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Ludewig, P., N. Knaub, W. Stolz, and K. Volz. "MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures." Journal of Crystal Growth 370 (May 2013): 186–90. http://dx.doi.org/10.1016/j.jcrysgro.2012.07.002.

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Krishnamurthy, D., S. Shanthi, K. M. Kim, Y. Sakai, M. Ishimaru, S. Hasegawa, and H. Asahi. "MBE growth and characterization of TlInGaAsN double quantum well structures." Journal of Crystal Growth 311, no. 7 (March 2009): 1733–38. http://dx.doi.org/10.1016/j.jcrysgro.2008.12.002.

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Kim, Ki-Sung, Sung-Jin Lim, Ki-Hong Kim, Jae-Ryung Yoo, Taek Kim, and Yong-Jo Park. "MOVPE growth optimization for optically efficient GaInNAs quantum well structure." Journal of Crystal Growth 273, no. 3-4 (January 2005): 368–74. http://dx.doi.org/10.1016/j.jcrysgro.2004.09.041.

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Hernandez-Mainet, Luis, Guopeng Chen, Amir Zangiabadi, Aidong Shen, and Maria C. Tamargo. "Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications." Journal of Vacuum Science & Technology A 39, no. 3 (May 2021): 033205. http://dx.doi.org/10.1116/6.0000947.

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Tian, Aiqin, Jianping Liu, Liqun Zhang, Lingrong Jiang, Masao Ikeda, Shuming Zhang, Deyao Li, et al. "Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth." Applied Physics Letters 111, no. 11 (September 11, 2017): 112102. http://dx.doi.org/10.1063/1.5001185.

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WANG, JIN, J. B. JEON, K. W. KIM, and M. A. LITTLEJOHN. "OPTOELECTRONIC PROPERTIES OF STRAINED WURTZITE GaN QUANTUM-WELL LASERS." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1189–209. http://dx.doi.org/10.1142/s0129156498000464.

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Fundamental optical properties of strained wurtzite GaN quantum-well laser are calculated and evaluated near the threshold condition. The formalism is based on a self-consistent methodology that couples an envelope-function Hamiltonian for band structures with photon-carrier rate equations. Details of energy band structure, optical gain, and modulation response are studied comprehensively under the effects of strain-induced piezoelectric fields, bandgap renormalization, and the carrier capture processes. Comparisons between different approximations show that self-consistency is essential to accurately simulate pseudomorphically strained wurtzite GaN quantum-well lasers.

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41

McCrary, V. R., J. W. Lee, S. N. G. Chu, S. E. G. Slusky, M. A. Brelvi, G. Livescu, P. M. Thomas, L. J. P. Ketelsen, and J. L. Zilko. "Growth of InGaAsP/InP single‐quantum‐well and multiple‐quantum well structures by low‐pressure metal‐organic chemical vapor deposition." Journal of Applied Physics 69, no. 10 (May 15, 1991): 7267–72. http://dx.doi.org/10.1063/1.347624.

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42

You Minghui, 尤明慧, 高欣 Gao Xin, 李占国 Li Zhanguo, 刘国军 Liu Guojun, 李林 Li Lin, 李梅 Li Mei, and 王晓华 Wang Xiaohua. "Growth 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers." High Power Laser and Particle Beams 22, no. 8 (2010): 1716–18. http://dx.doi.org/10.3788/hplpb20102208.1716.

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Reed, M. A., J. W. Lee, R. K. Aldert, and A. E. Wetsel. "Investigation of quantum well and tunnel barrier growth by resonant tunneling." Journal of Materials Research 1, no. 2 (April 1986): 337–42. http://dx.doi.org/10.1557/jmr.1986.0337.

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We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.

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44

Survase, Laxman, Manohar Nyayate, and Sen Mathew. "Growth and characterization of Si doped InGaAs/GaAs Single quantum well." IOSR Journal of Applied Physics 6, no. 6 (2014): 47–50. http://dx.doi.org/10.9790/4861-06614750.

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Menkara, H. M., R. N. Bicknell-Tassius, R. Benz, and C. J. Summers. "MBE growth and characterization of doped multiple quantum well avalanche photodiodes." Journal of Crystal Growth 175-176 (May 1997): 983–89. http://dx.doi.org/10.1016/s0022-0248(96)01181-5.

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Chalmers, S. A., K. P. Killeen, and E. D. Jones. "Accurate multiple‐quantum‐well growth using real‐time optical flux monitoring." Applied Physics Letters 65, no. 1 (July 4, 1994): 4–6. http://dx.doi.org/10.1063/1.113070.

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Shirasawa, Tomoe, Noriaki Mochida, Akira Inoue, Tohru Honda, Takahiro Sakaguchi, Fumio Koyama, and Kenichi Iga. "Interface control of GaN/AlGaN quantum well structures in MOVPE growth." Journal of Crystal Growth 189-190 (June 1998): 124–27. http://dx.doi.org/10.1016/s0022-0248(98)00184-5.

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Zeng, K. C., J. Li, J. Y. Lin, and H. X. Jiang. "Optimizing growth conditions for GaN/AlxGa1−xN multiple quantum well structures." Applied Physics Letters 76, no. 7 (February 14, 2000): 864–66. http://dx.doi.org/10.1063/1.125610.

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Wu, Jeng-Shian, Yan-Kuin Su, Jia-Rong Chang, Chuing-Liang Lin, Hsin-Chuan Wang, and Duen-Hwa Jaw. "MOVPE Growth and Characterization of AlInAsSb/GaInAsSb multiple-quantum-well structure." Japanese Journal of Applied Physics 39, S1 (January 1, 2000): 222. http://dx.doi.org/10.7567/jjaps.39s1.222.

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Hums, Christoph, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Pierre Lorenz, Stefan Krischok, Frank Bertram, et al. "AlInN/GaN based multi quantum well structures - growth and optical properties." physica status solidi (c) 6, S2 (March 12, 2009): S451—S454. http://dx.doi.org/10.1002/pssc.200880899.

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