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Dissertations / Theses on the topic 'Quantum well growth methodology'

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Published: 4 June 2021

Last updated: 1 February 2022

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1

Blenkhorn, William Eric. "Optical studies of polar InGaN/GaN quantum well structures." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-polar-ingangan-quantum-well-structures(7f610cae-ba98-44d8-ae54-dbc4c44725d4).html.

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In this thesis, I will present and discuss research performed on InGaN/GaN multiple quantum well (QW) structures. The results of which were taken using photoluminescence (PL) spectroscopy and PL time decay spectroscopy. In the first two experimental chapters, I report on the effects of QW growth methodology on the optical properties of c-plane InGaN/GaN QWs. I compare structures grown using the single temperature (1T), quasi-two temperature (Q2T), temperature bounced (T-bounced) and two temperature (2T) QW growth methodologies. The T-bounced and 2T structures are observed to have gross well wi

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2

Guptah, Vinod Kumar. "Growth on patterned substrates for optoelectronic device applications." Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267027.

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3

Barnes, Jennifer M. "An experimental and theoretical study of GaAs/InGaAs quantum well solar cells and carrier escape from quantum wells." Thesis, Imperial College London, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319305.

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4

Höglund, Linda. "Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors." Doctoral thesis, Linköpings universitet, Materiefysik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15774.

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This thesis presents results from the development of quantum dot (QD) based infrared photodetectors (IPs). The studies include epitaxial growth of QDs, investigations of the structural, optical and electronic properties of QD-based material as well as characterisation of the resulting components. Metal-organic vapour phase epitaxy is used for growth of self-assembled indium arsenide (InAs) QDs on gallium arsenide (GaAs) substrates. Through characterisation by atomic force microscopy, the correlation between size distribution and density of quantum dots and different growth parameters, such as

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5

Höglund, Linda. "Growth and characterisation of InGaAs-based quantum dot-in-a-well infrared photodetectors /." Linköping : [Department of Physics, Chemistry and Biology, Linköping University], 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15774.

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6

Hollander, Jonathan Lee. "Defect-reduced growth and characterisation of off-basal III-nitride quantum well structures." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609372.

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7

BANAL, RYAN GANIPAN. "MOVPE Growth of AlN and AlGaN/AlN Quantum Wells and their Optical Polarization Properties." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78005.

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8

Eker, Ömer F. "A hybrid prognostic methodology and its application to well-controlled engineering systems." Thesis, Cranfield University, 2015. http://dspace.lib.cranfield.ac.uk/handle/1826/9269.

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This thesis presents a novel hybrid prognostic methodology, integrating physics-based and data-driven prognostic models, to enhance the prognostic accuracy, robustness, and applicability. The presented prognostic methodology integrates the short-term predictions of a physics-based model with the longer term projection of a similarity-based data-driven model, to obtain remaining useful life estimations. The hybrid prognostic methodology has been applied on specific components of two different engineering systems, one which represents accelerated, and the other a nominal degradation process. Clo

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9

Fuchs, Christian [Verfasser], and Wolfgang [Akademischer Betreuer] Stolz. "Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers / Christian Fuchs ; Betreuer: Wolfgang Stolz." Marburg : Philipps-Universität Marburg, 2018. http://d-nb.info/1171424728/34.

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10

Bierwagen, Oliver. "Growth and anisotropic transport properties of self assembled InAs nanostructures in InP." Doctoral thesis, [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985352930.

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11

Küpers, Hanno. "Growth and properties of GaAs/(In,Ga)As core-shell nanowire arrays on Si." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19402.

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Diese Arbeit präsentiert Untersuchungen zum Wachstum von GaAs Nanodrähten (NWs) und (In,Ga)As Hüllen mittels Molekularstrahlepitaxie (MBE) mit sekundärem Fokus auf den optischen Eigenschaften solcher Kern-Hülle Strukturen. Das ortsselektive Wachstum von GaAs NWs auf mit Oxidmasken beschichteten Si Substraten wird untersucht, wobei der entscheidende Einfluss der Oberflächenpreparation auf die vertikale Ausbeute von NW Feldern aufgedeckt wird. Basierend auf diesen Ergebnissen wird ein zweistufiger Wachstumprozess präsentiert der es ermöglicht NWs mit dünner und gerade Morphologie zu erhalten ohn

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12

Zippel, Jan. "Gepulste Laserabscheidung und Charakterisierung funktionaler oxidischer Dünnfilme und Heterostrukturen." Doctoral thesis, Universitätsbibliothek Leipzig, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-100358.

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In der vorliegenden Arbeit wird das Hauptaugenmerk auf die Untersuchung der Auswirkungen einer Modifikation der zugänglichen Prozessparameter auf die funktionalen Eigenschaften oxidischer Dünnfilme während der gepulsten Laserabscheidung (PLD) gelegt. Der erste Teil der Arbeit stellt die Herstellung von BaTiO3/SrTiO3-Mehrfach-Heterostrukturen auf thermisch und chemisch vorbehandelten SrTiO3-Substraten mittels gepulster Laserabscheidung (PLD) vor. Die zugängliche in-situ Wachstumskontrolle durch ein reflection high-energy electron diffraction (RHEED)-System ermöglicht es die Wachstumsprozesse in

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13

Guille, Claire. "Etude de la formation par epitaxie par jets moleculaires des interfaces entre inas et gaas." Paris 6, 1987. http://www.theses.fr/1987PA066415.

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Malgre le fort desaccord parametrique existant entre gaas et inas (7,2%), il est possible de realiser des couches pseudomorphes de l'un des materiaux sur l'autre, en se limitant a des couches d'epaisseurs inferieures a une dizaine d'a. Dans ces conditions,l'interface inas/gaas est plane et chimiquement abrupte, a la demi-couche pres. L'interface inverse est diffuse et rugueuse a l'echelle atomique. Au cours de la formulation de cette heterojonction, il y a segregation d'in en surface et formation d'un compose ternaire. Ce type de phenomene de segregation d'in se produit egalement dans les comp

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14

DUPONT-NIVET, ERIC. "Epitaxie en phase vapeur aux organometalliques de gainp et algainp sur gaas : application a la realisation de diodes et de lasers a heterojonctions." Paris 7, 1987. http://www.theses.fr/1987PA077108.

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Principes de base de la methode movpe et problemes poses par sa mise en oeuvre. Cas particuliers de gainp et de algainp. Analyse des mecanismes de la methode movpe. Proprietes des interfaces gainp/gaas, algainp/gaas et algainp/gainp et presentation de puits quantiques algainp/gainp. Realisation de dispositifs optoelectroniques: presentations de diodes electroluminescentes a homojonctions en gainp et algainp, examen des travaux des principales equipes epitaxiant algainp, presentation de lasers a heterojonctions algainp/gainp/algainp

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15

Fan, Wen-Chung, and 范文忠. "Growth and optical study of type-II quantum well and quantum dot structures." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/09425140675312570973.

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博士<br>國立交通大學<br>電子物理系所<br>99<br>Type-II ZnSeTe/ZnSe multiple quantum wells (MQWs), ZnTe/ZnSe quantum dots (QDs), ZnMnTe/ZnSe QDs, and ZnTe/ZnMnSe QDs were grown by molecular beam epitaxy (MBE). The photoluminescence (PL), temperature dependent PL, time-resolved PL and magneto-PL were used to investigate the interesting physical properties. The tunability of the emission energy, oscillator strength and PL efﬁciency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A signiﬁcant blueshift about 260 meV of the PL peak energy

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16

邱信豪. "Molecular Beam Epitaxy growth of InN/InGaN Multiple Quantum Well Structures." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/48326711955563336050.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>100<br>Abstract InN has drawn intensive research interest due to its lower effective mass, higher mobility, and lowest energy band gap among nitride semiconductors. The fabrication of InN/InGaN quantum well (QW) structure is a key technology to implement the fabrication of advanced InN based devices. By measuring the in-situ reflectivity, the accumulation of indium and the formation of InN by irradiating indium with nitrogen plasma on the growth front during molecular beam epitaxy can be monitored. An alternate shutter sequence of metal and nitrogen fluxes was desig

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17

Liao, Che-Hao, and 廖哲浩. "Growth and Characterization of Regularly Patterned InGaN/GaN Quantum-well Nanorod Arrays." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/00347952445074740781.

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博士<br>國立臺灣大學<br>光電工程學研究所<br>100<br>In this dissertation, we first demonstrate the growth of high-quality GaN nanorods (NRs) on c-plane sapphire substrate by metalorganic chemical vapor deposition with various hole patterns on the templates. With the nano-imprint technique, the selective-area growth leads to the growth of regularly patterned GaN NRs. The growth of GaN NRs starts with a hole-filling process, followed by NR growth with the pulsed growth mode through switching on and off alternatively the TMGa and NH3 flows. Regularly arranged GaN NRs of uniform geometry are formed. Then, a regula

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18

HUANG, ZHEN-WANG, and 黃振旺. "The growth and characterizations of in GaAs/GaAs strained layer quantum well structure." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/27262674762779253260.

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19

Chen, Y. J., and 陳育志. "Effect of incorporation and growth rate on electric properties of InAs/InGaAs quantum dots and InGaAsN single quantum well." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/90182226085313635138.

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碩士<br>國立交通大學<br>電子物理系<br>91<br>Abstract The effect of N incorporation into the 1.3μm InAs/InGaAs quantum dots(QDs) is investigated by current-voltage(I-V),capacitance-voltage(C-V),admittance and deep-level transient spectroscopy﹒For the QD sample without any incorporation, C-V profile shows two quantum peaks which are probably originated from quantum well(QW) and QD, respectively﹒From their peak separation in voltage, the QD level is estimated at energy position of 0.2eV below the QW level﹒For the QD sample with the N(0.4~1%) incorporation into the InGaAs well, only single quantum p

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20

Hsu, Yu-Chi, and 徐鈺淇. "Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/79673648526784456969.

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博士<br>國立中山大學<br>物理學系研究所<br>101<br>In this thesis, the GaN thin film was grown on γ-LiAlO2 (LAO) substrate by plasma assisted molecular beam epitaxy. The LAO substrate provides two basal planes which are rectangular and hexagonal basal planes; therefore we grew M-plane GaN thin film and self-assembled c-plane single crystal GaN microdisk and micropyramid at the same time. To simulate the mechanism of self-assemble c-plane single crystal GaN microdisk and micropyramid, we realized the GaN microdisk was established with the capture of N atoms by most-outside Ga atoms to form the diverging growth.

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21

Fu, Hsueh, and 彭學甫. "The effect of growth temperature and doping for quantum dots-in-a-well laser." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47368220717402007434.

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碩士<br>國立中山大學<br>光電工程學系研究所<br>100<br>The purpose of this thesis is to fabricate 12-layer InxGa1-xAs quantum dots grown on 2-nm In0.1Ga0.9As quantum wells (DWell) laser structures grown by molecular-beam epitaxy (MBE) on GaAs substrats. We expect to optimum the lasers performance by tune the epitaxial recipe and fabrication condition. For the carrier injection efficiency, DWell structure of quantum dots grown on quantum wells is proposed to enhance the carrier capture rate. So we analyze a series of DWell structure in this work. In the epitaxial recipe, we investigate the influences of p-type do

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22

Lin, Jian-Ming, and 林健銘. "Growth Model of GaAsSb/GaAs Quantum Well by Using Gas Source Molecular Beam Epitaxy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/87400636754354241865.

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博士<br>國立臺灣大學<br>電子工程學研究所<br>99<br>In this study, gas source molecular beam Epitaxy（GSMBE）was used to grow GaAsSb/GaAs multiple quantum wells with different compositions at various substrate temperatures. In the X-ray measurements, it was found that the Sb content in quantum well is varied with the As atom and reveals different incorporation behaviors. Strong photoluminescence intensity was observed in the grown quantum wells. The maximum wavelength for the sample is about 1.327μm（0.934eV）, which gives an evidence of application for 1.3μm band range. Moreover, blue shift in the type-II GaAsSb/

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23

Chuo, Chang-Cheng, and 卓昌正. "Growth and Characterization of InGaN/GaN Quantum Well and Blue-violet Laser Diode Structures." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/42590454707279903961.

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24

Wu, Cheng-Hsien, and 吳政憲. "MOVPE Growth of (In)GaNAs and GaInNP for Quantum Well Lasers and Heterojunction Bipolar Transistors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/95911527501031982551.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>92<br>In this dissertation, the III-N-V alloys and their heterostructures including GaNAs, InGaNAs, GaInNP, GaNAs/GaAs and InGaNAs/GaAs quantum wells have been grown by metal organic vapor phase epitaxy (MOVPE). Several material characterization techniques, such as high resolution X-ray diffraction (HRXRD), Modulation spectroscopy, photoluminescence (PL), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) have been performed to characterize the material quality of these epitaxial structures. The influence of N incorporation on

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25

鍾宜縈. "Optical and material studies of InGaN/GaN ultiple quantum well structures of different well widths and their post-growth thermal annealing effects." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/09313169102625329341.

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26

Lee, Chien-Hung, and 李健鴻. "Growth of well-aligned Ge quantum dots by adjusting the inner morphology of nano-hole array on Si substrate." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/29359201902735440185.

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碩士<br>臺灣大學<br>電子工程學研究所<br>98<br>This thesis discusses systematically about how to achieve the well-aligned and size-homogeneous germanium quantum dots (Ge QDs). The Si (001) substrates were fabricated by electron beam (E-beam) lithography and reactive ion etching (RIE), which result in circle-shape periodic nano-patterned on the surface. Then, Ge QDs were grown on the circle-patterned Si (001) template in ultrahigh vacuum chemical vapor deposition (UHV-CVD) chamber using Stranski-Krastanow (SK) growth mode. We successfully realize one Ge QD in one hole by modulating the inner morphology of hol

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27

You, Shuo-Ting, and 尤碩廷. "Growth of GaN thin film and AlGaN-based quantum well structure by plasma-assisted molecular beam epitaxy for optoelectronics application." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8pa8ub.

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博士<br>國立中山大學<br>物理學系研究所<br>105<br>In this dissertation, we discuss growth of GaN thin film and AlGaN-based quantum well structure by plasma-assisted molecular beam epitaxy for optoelectronics application. At the first, we grow non-polar plane GaN thin film on the low lattice mismatch substrate. We grow M-plane GaN on ZnO micro-rods (1010) under Ga-rich growth condition which was confirmed by TEM and polarization-dependent photoluminescence. We found that the ZnGa2O4 compound was formed at the M-plane hetero-interface which induce stacking fault defect in the epilayer. We demonstrated that the

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28

Choi, Miri. "Monolithic integration of functional perovskite structures on Si." Thesis, 2014. http://hdl.handle.net/2152/26052.

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Functional crystalline oxides with perovskite structure have a wide range of electrical properties such as ferroelectric, ferromagnetic, and superconductive, as well as unique properties that make them suited for a wide variety of applications including electro-optics, high-k dielectrics, and catalysis. Therefore, in order to realize the potential of perovskite oxides it is desirable to integrate them with semiconductors. Due to the high surface energy of oxides compared to that of semiconductors and the low number of oxides that are thermodynamically stable against SiO₂ formation, it has been

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29

"Polarization Effects in Group III-Nitride Materials and Devices." Doctoral diss., 2012. http://hdl.handle.net/2286/R.I.14643.

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abstract: Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed. The in-plane polarization is sensitive to the lateral characteristic dimension determined by the microstructure. Specific semi-polar plane growth is suggested for reducing quantum-confined Stark effect. The macroscopic electrost

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