Relevant bibliographies by topics / Quantum well detector

Academic literature on the topic 'Quantum well detector'

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Published: 11 March 2023

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Journal articles on the topic "Quantum well detector"

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Goossen, K. W., and S. A. Lyon. "Grating enhanced quantum well detector." Applied Physics Letters 47, no. 12 (December 15, 1985): 1257–59. http://dx.doi.org/10.1063/1.96434.

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Goossen, K. W., S. A. Lyon, and K. Alavi. "Photovoltaic quantum well infrared detector." Applied Physics Letters 52, no. 20 (May 16, 1988): 1701–3. http://dx.doi.org/10.1063/1.99022.

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CHOI, K. K. "CORRUGATED QUANTUM WELL INFRARED PHOTODETECTORS AND ARRAYS." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 715–59. http://dx.doi.org/10.1142/s012915640200168x.

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Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature III-V material technology. The employment of the corrugated light-coupling scheme further improves the technology for its simplicity and efficiency. A C-QWIP enjoys the same flexibility as a detector with intrinsic normal incident absorption. In this chapter, we will discuss the sensitivity of C-QWIPs and their utilities in infrared detection, material characterization and electromagnetic modeling. Besides the standard corrugated structures, other exploratory detector architectures will also be described.
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Parihar, S. R., S. A. Lyon, M. Santos, and M. Shayegan. "Voltage tunable quantum well infrared detector." Applied Physics Letters 55, no. 23 (December 4, 1989): 2417–19. http://dx.doi.org/10.1063/1.102032.

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Goossen, K. W., and S. A. Lyon. "Performance aspects of a quantum‐well detector." Journal of Applied Physics 63, no. 10 (May 15, 1988): 5149–53. http://dx.doi.org/10.1063/1.340417.

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Goossen, K. W., S. A. Lyon, and K. Alavi. "Grating enhancement of quantum well detector response." Applied Physics Letters 53, no. 12 (September 19, 1988): 1027–29. http://dx.doi.org/10.1063/1.100054.

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Rogalski, A. "Quantum well photoconductors in infrared detector technology." Journal of Applied Physics 93, no. 8 (April 15, 2003): 4355–91. http://dx.doi.org/10.1063/1.1558224.

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Dafu, Cui, Chen Zhenghao, Zhou Yueliang, Lu Huibin, Xie Yuanlin, and Yang Guozhen. "Quantum well infrared detector with grating enhancement." Infrared Physics 32 (January 1991): 53–56. http://dx.doi.org/10.1016/0020-0891(91)90095-w.

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Dong, Tianyang, Yizhe Yin, Xiaofei Nie, Pengkang Jin, Tianxin Li, Honglou Zhen, and Wei Lu. "Narrow-band and peak responsivity enhanced metal microcavity quantum well infrared detector." Applied Physics Letters 121, no. 7 (August 15, 2022): 073507. http://dx.doi.org/10.1063/5.0099568.

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The integration of narrow-band and spectral detection capabilities on pixel-level detectors is widely expected for compact infrared gas detection. This imposes great challenges on the detector performance, as the device response must precisely match with the gas absorption spectrum while also collecting enough signals in a limited spectral range to maintain high detection sensitivity. In this paper, a pixel-level narrow-band high quantum efficiency metal microcavity quantum well infrared photodetector (MC-QWIP) working around 10.6 μm is designed and fabricated. The device shows good narrow-band characteristics (200–550 nm) and high peak responsivity (at least eight times stronger than the reference device with 45° edge facet). The results of experiments and numerical simulations show that several different resonance modes with peak wavelengths close to the intrinsic detection wavelength can be obtained by changing the width of the microcavity. The response bandwidth of the device can be controlled by changing resonance modes, while the resonant wavelength can be fine-tuned by the width of the microcavity. This indicates that the MC-QWIP device has good prospects in narrow-band gas detection and narrow-band differential detection.
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You, Lixing. "Superconducting nanowire single-photon detectors for quantum information." Nanophotonics 9, no. 9 (June 22, 2020): 2673–92. http://dx.doi.org/10.1515/nanoph-2020-0186.

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AbstractThe superconducting nanowire single-photon detector (SNSPD) is a quantum-limit superconducting optical detector based on the Cooper-pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count rate, higher counting rate, and lower timing jitter when compared with those exhibited by its counterparts. SNSPDs have been extensively applied in quantum information processing, including quantum key distribution and optical quantum computation. In this review, we present the requirements of single-photon detectors from quantum information, as well as the principle, key metrics, latest performance issues, and other issues associated with SNSPD. The representative applications of SNSPDs with respect to quantum information will also be covered.
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Dissertations / Theses on the topic "Quantum well detector"

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Mahajumi, Abu Syed. "InAs/GaSb quantum well structures of Infrared Detector applications. : Quantum well structure." Thesis, IDE, Microelectronics and Photonics, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-3848.

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The detection of MWIR (mid wavelength infrared radiation) is the important for industrial, biomedical and military applications.desirable for the radiation detector to operate in the middle wavelength IR (MWIR) band corresponding to a wavelength band ranging from about 3 microns to about 5 microns.Such MWIR detectors allow forobjects having a similar thermal signature. In addition, MWIR detectors may be used in low power applications such as in night vision for surveillance of personnel.

Now a day commercially available uncooled IR sensors operating in MWIR region (2 – 5 μm) use microbolometric detectors which are inherently slow. The novel detector of InAs/GaSb quantum well structures overcomes this limitation. However, third-generation high-performance IR  FPAs are already an attractive proposition to the IR system designer. They covered such as multicolour (at least two, and maybe more different spectral bands) with the possibility of simultaneous detection in both space and time, and ever larger sizes of, say, 2000 × 2000, and operating at higher temperatures, even to room temperature, for all cut-off wavelengths.These hetero structures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of thesestructures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-20 This work is focused on the various key characteristics the optical (responsivity and detectivity) and electrical (surface leakage & dark current) of infrared detector and proof of concept is demonstrated on infrared P-I-N photodiodes based on InAs/GaSb superlattices with ~8.5 μm cutoff wavelength and bandgap energy ~150 meV operating at 78 K where supression of surface leakage currents is observed. In certain military applications, it isthermal imaging of airplanes, artillery tanks and otherμm).


Nice research work at Halmstad University
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Giannopoulos, Mihail. "Tunable bandwidth quantum well infrared photo detector (TB-QWIP)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Dec%5FGiannopoulos.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2003.
Thesis advisor(s): Gamani Karunasiri, James Luscombe. Includes bibliographical references (p. 59-61). Also available online.
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Ganbold, Tamiraa. "Development of quantum well structures for multi band photon detection." Doctoral thesis, Università degli studi di Trieste, 2015. http://hdl.handle.net/10077/11801.

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2013/2014
La ricerca qui presentata è incentrata sullo sviluppo di tecnologie innovative per la produzione di rivelatori di posizione di fasci fotonici veloci (pBPM) per applicazioni in luce di sincrotrone (SR) e laser a elettroni liberi (FEL). Nel nostro lavoro abbiamo proposto un rilevatore in-situche ha dimostrato velocità di risposta ed omogeneità sia per scopi di diagnostica che di calibrazione. I dispositivi sono basati su pozzi quantici (QW) dimateriali semiconduttori InGaAs / InAlAs,che offrono diversi vantaggi grazie alla loro gap di banda diretta e a bassa energia, e all’alta mobilità elettronica a temperatura ambiente. I QW metamorfici diIn0.75Ga0.25As/In0.75Al0.25As contenenti un gas di elettroni bidimensionali (2DEG) sono staticresciuti tramite epitassia a faci molecolari (MBE). Tali materiali presentano alcune differenze notevoli rispetto al diamante, che è il materiale utilizzato per i rivelatori commerciali allo stato dell’arte. Innanzitutto, i costi di produzione e di fabbricazione sono molto più bassi. Poi, il coefficiente di assorbimento è molto superiore al diamante su una vasta gamma di energie di raggi X, il che li rende ampiamente complementari in possibili applicazioni. Inoltre, utilizzando semiconduttori composti si possono fabbricare dispositivi con diverse combinazioni di materiali per la barriera ed il QW;ciòha permesso di ridurre la gap di energia fino a 0.6 eV. La disponibilità e la ripetibilità di fabbricazione dei dispositivi è migliore rispetto a quelle del diamante. Quattro configurazioni di dispositivi a QW pixelati sono stati testati con diverse fonti di luce, come radiazione di sincrotrone, tubo a raggi X convenzionali e laser ultra veloce nel vicinoUV. In questa tesi, dopo aver introdotto i dispositivi a QW per utilizzo comepBPM, saranno riportati e discussii risultati più importanti ottenuti. Tali risultati indicano che questi rivelatori rispondono con tempi di 100-ps a impulsi laser ultraveloci, cioè un fattore 6 più velocirispetto a rivelatori a semiconduttori commerciali allo stato dell’arte. La precisione raggiunta nella stima della posizione del fascio fotonico è di 800nm, da confrontare con i 150nm di rivelatori a diamante commerciali. Inoltre, i nostri rivelatori di fotoni a QW lavorano a tensioni molto inferiori rispetto aipBPMs esistenti.Infine, test con raggi X da radiazione di sincrotrone mostrano come questi dispositivi presentano elevate efficienze di raccolta di carica, che possono essere imputabili all'effetto di moltiplicazione di carica del gas di elettroni 2D all'interno del pozzo. Tutti questi vantaggi rispetto ai rivelatori esistenti basati sul diamante, rendono i nostri dispositivi potenzialmente molto attrattivi come alternativa a quelli commerciali.
XXVII Ciclo
1984
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Wang, Yuekun. "In0.53Ga0.47As-In0.52Al0.48As multiple quantum well THz photoconductive switches and In0.53Ga0.47As-AlAs asymmetric spacer layer tunnel (ASPAT) diodes for THz electronics." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/in053ga047asin052al048as-multiple-quantum-well-thz-photoconductive-switches-and-in053ga047asalas-asymmetric-spacer-layer-tunnel-aspat-diodes-for-thz-electronics(5fd73bd5-aef3-476b-be1b-7498da3f9627).html.

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This thesis is concerned with terahertz (THz) technology from both optical and electronic approaches. On the optical front, the investigation of optimised photoconductive switches included the characterisation, fabrication and testing of devices which can generate and detect THz radiation over the frequency range from DC to ~ 2.5 THz. These devices incorporated semiconductor photoconductors grown under low temperature (LT) Molecular Beam Epitaxy (MBE) conditions and using distributed Bragg reflectors (DBRs). The material properties were studied via numerous characterisation techniques which included Hall Effect and mid infrared reflections. Antenna structures were fabricated on the surface of the active layers and pulsed/continuous wave (CW) signal absorbed by these structures (under bias) generates photocurrent. With the help of the DBRs at certain wavelengths (800 nm and 1550 nm), the absorption coefficient at the corresponding illumination wavelength increased thus leading to significant increase of the THz output power while the materials kept the desirable photoconductive material properties such as high dark resistivity and high electron mobility. The inclusion of DBRs resulted in more than doubling of the THz peak signals across the entire operating frequency range and significant improvements in the relative THz power. For the THz electronic approach, a new type of InP-based Asymmetric Spacer Tunnel Diode (ASPAT), which can be used for high frequency detector, was studied. The asymmetric DC characteristics for this novel tunnel diode showed direct compatibility with high frequency zero-bias detector applications. The devices also showed an extreme thermal stability (less than 7.8% current change from 77 K to 400 K) as the main carrier transport mechanism of the ASPAT was tunnelling. Physical models for this ASPAT diode were developed for both DC (direct current) and AC (alternating current) simulations using the TCAD software tool SILVACO. The simulated DC results showed almost perfect matches with measurements across the entire temperature range from 77 K to 400 K. From RF (radio frequency) measurements, the intrinsic diode parameters were extracted and compared with measured data. The simulated zero biased detector circuits operating at 100 GHz and 240 GHz using the new InGaAs-AlAs ASPAT diode (4*4 micrometer square) showed comparable voltage sensitivities to state of the art Schottky barrier diodes (SBDs) detectors but with the added advantage of excellent thermal stability.
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Psarakis, Eftychios V. "Simulation of performance of quantum well infrared photocetectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Jun%5FPsarakis.pdf.

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Thesis (M.S. in Applied Physics and M.S. in Electrical Engineering)--Naval Postgraduate School, June 2005.
Thesis Advisor(s): Gamani Karunasiri, James Luscombe, Robert Hutchins, John Powers. Includes bibliographical references (p. 129-131). Also available online.
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Hanson, Nathan A. "Characterization and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FHanson.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, June 2006.
Thesis Advisor(s): Gamani Karunasiri, James H. Luscombe. "June 2006." Includes bibliographical references (p. 49-50). Also available in print.
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Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.

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Xu, Yuanjian Yariv Amnon. "Quantum well intersubband transition detection and modulation /." Diss., Pasadena, Calif. : California Institute of Technology, 1997. http://resolver.caltech.edu/CaltechETD:etd-05112005-153655.

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Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.

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Konukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.

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Books on the topic "Quantum well detector"

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H, Francombe Maurice, and Vossen John L, eds. Homojunction and quantum-well infrared detectors. San Diego: Academic Press, 1995.

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C, Liu H., ed. Quantum well infrared photodetectors: Physics and applications. Berlin: Springer, 2007.

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Schneider, H. Quantum well infrared photodetectors: Physics and applications. Berlin: Springer, 2007.

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The physics of quantum well infrared photodetectors. River Edge, NJ: World Scientific, 1997.

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Shi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Shi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.

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International Symposium on Long Wavelength Infrared Detectors and Arrays, Physics and Applications (2nd 1994 Miami Beach, Fla.). Proceedings of the Second International Conference on Long Wavelength Infrared Dectectors and Arrays, Physics and Applications. Pennington, NJ: Electrochemical Society, 1995.

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Omar, Manasreh Mahmoud, ed. Semiconductor quantum wells and superlattices for long-wavelength infrared detectors. Boston: Artech House, 1993.

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International, Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications (6th 1998 Boston Mass ). Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications. Pennington, New Jersey: Electrochemical Society, 1999.

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International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications (5th 1997 Paris, France). Proceedings of the Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications. Pennington, NJ: Electrochemical Society, 1997.

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Book chapters on the topic "Quantum well detector"

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Andersson, J. Y., L. Lundqvist, J. Borglind, and D. Haga. "Performance of Grating Coupled AiGaAs/GaAs Quantum Well Infrared Detectors and Detector Arrays." In Quantum Well Intersubband Transition Physics and Devices, 13–27. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_2.

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Kane, M. J., S. Millidge, M. T. Emeny, D. Lee, D. R. P. Guy, and C. R. Whitehouse. "Performance Trade Offs in the Quantum Well Infra-Red Detector." In NATO ASI Series, 31–42. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3346-7_3.

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Rogalski, Antoni, and Zbigniew Bielecki. "Quantum Well, Superlattice and Quantum Dot Photodetectors." In Detection of Optical Signals, 277–317. New York: CRC Press, 2022. http://dx.doi.org/10.1201/b22787-8.

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Kane, M. J. "Quantum Well Infra-Red Detectors." In Infrared Detectors and Emitters: Materials and Devices, 423–56. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4615-1607-1_15.

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Sarov, G. A. "Preparation of Quantum Structures: Quantum Well Infrared Detectors." In Fabrication, Properties and Applications of Low-Dimensional Semiconductors, 59–95. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0089-2_2.

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Rosencher, E., Ph Bois, and J. Y. Duboz. "The Physics of Quantum Well Infrared Detectors." In Devices Based on Low-Dimensional Semiconductor Structures, 99–113. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0289-3_7.

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Gravé, Ilan, and Amnon Yariv. "Fundamental Limits in Quantum Well Intersubband Detection." In NATO ASI Series, 15–30. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3346-7_2.

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Saha, Sumit, and Jitendra Kumar. "Predictive Analysis of Step-Quantum Well Active Region for Quantum Cascade Detectors." In Lecture Notes in Electrical Engineering, 139–49. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-3767-4_13.

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Dupont, E., P. B. Corkum, P. W. Dooley, H. C. Liu, P. H. Wilson, M. Lamm, M. Buchanan, and Z. R. Wasilewski. "Non-Resonant Two-Photon Absorption in Quantum Well Infrared Detectors." In Quantum Well Intersubband Transition Physics and Devices, 493–500. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_42.

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Schneider, Harald, Stefan Ehret, Eric C. Larkins, John D. Ralston, and Peter Koidl. "A Novel Transport Mechanism for Photovoltaic Quantum well Intersubband Infrared Detectors." In Quantum Well Intersubband Transition Physics and Devices, 187–96. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_15.

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Conference papers on the topic "Quantum well detector"

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Doughty, K. L., P. O. Holtz, R. J. Simes, A. C. Gossard, J. Maseijian, and J. L. Merz. "Tunable Quantum-Well Infrared Detector." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tue11.

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Infrared detectors (2-25 microns) have been a subject of much interest in recent years for defense and space exploration applications. Detectors built using II-VI compounds (for example, HgCdTe) have been investigated in depth, but suffer from the instability and nonuniformity of the materials, and from processing difficulties. Recently, quantum-well detectors using III-V compounds have been produced which demonstrate good detectivity in the 10 micron wavelength region 1,2. Their approach is based on inter-subband absorption in quantum-wells, or on confined-state to conduction-band transitions, and is limited to a fixed band of wavelengths for a given detector.
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Grant, Peter D., Richard Dudek, Lynne Wolfson, Margaret Buchanan, and Hui Chun Liu. "Ultrafast quantum well infrared photo detector." In Photonics North, edited by John C. Armitage, Roger A. Lessard, and George A. Lampropoulos. SPIE, 2004. http://dx.doi.org/10.1117/12.567260.

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Patrashin, M., and I. Hosako. "THz GaAs/AlGaAs Quantum Well Detector." In 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368720.

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Lu, Wei, Ning Li, Na Li, Lin-Fa Zhang, Shuechu Shen, Ying Fu, Magnus Willander, L. Fu, Hark H. Tan, and Chennupati Jagadish. "Intermixing effect in quantum well infrared detector." In International Symposium on Optical Science and Technology, edited by Bjorn F. Andresen, Gabor F. Fulop, and Marija Strojnik. SPIE, 2000. http://dx.doi.org/10.1117/12.409876.

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Taylor, G. W. "Single quantum-well inversion channel devices for OEICs." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fu2.

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Optoelectronic integrated circuits (OEICs) are expected to perform a broad range of high-performance functions in optical interconnects, optical signal processors, and, eventually, optical computers. Performance advantages are also expected for optical switching matrices and high-speed optoelectronic repeaters. The incompatibility of electronic and optical devices usually requires additive growth techniques, which the layer structures are grown in sequence (fabrication is by selective removal), or by multiple growth techniques, in which layer sequences are grown selectively by removal of the previous sequence. We describe a new approach in which a single high precision molecular-beam epitaxial growth provides a single-quantum-well inversion-channel structure from which lasers, detectors, and transistors are formed with a single device processing sequence. In this approach the optical source detector and transistor are, in fact, the same device structure which is used differently, depending on its application. The transistor is the heterostructure field-effect transistor (HFET) and the detector is the heterostructure field-effect detector (HFED). The laser is a bistable switching device with large optical and electrical gain or is the three-terminal HFET laser. The operation and latest results on all of these devices will be presented.
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Grave, I., A. Shakouri, N. Kuze, and A. Yariv. "Switching-peak GaAs/AlGaAs multistack quantum well infrared detector." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mhh4.

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A novel type of intersubband GaAs/AlGaAs infrared detector for the range 6–12 μm is described. It consists of three different stacks of quantum wells, each stack designed for response at a different peak wavelength. The detector can operate in a number of modes: a) standard bound- to-continuum detector; b) wide-band intersubband detector; c) switching-peak tunable detector. All operations are controlled by the applied voltage. The device displays excellent responsivity and detectivity figures of merit. The peak-switching and tunability properties are due to the formation and readjustment of high and low electric field domains within the superlattice. Carriers in the high-field regions contribute to the photoresponse; carriers excited by the incident infrared light in the low-field domains have a large probability of being recaptured by their original quantum well, thus contributing negligibly to the photocurrent. It is shown that infrared photocurrent spectroscopy is an excellent tool to study the structure of electric field domain in doped or otherwise carrier-rich superlattices.
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Gunapala, S., S. Bandara, D. Ting, C. Hill, J. Mumolo, J. Liu, S. Rafol, E. Blazejewski, P. LeVan, and M. Tidrow. "Quantum Well and Quantum Dot Based Detector Arrays for Infrared Imaging." In 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279146.

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Gunapala, S. D., S. V. Bandara, D. Z. Ting, J. K. Liu, C. J. Hill, J. M. Mumolo, E. Kurth, J. Woolaway, P. D. LeVan, and M. Z. Tidrow. "Quantum well and quantum dot based detector arrays for infrared imaging applications." In Optical Engineering + Applications, edited by Marija Strojnik-Scholl. SPIE, 2007. http://dx.doi.org/10.1117/12.729492.

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Serna, Jr., Mario. "Quantum-well-detector concept for hyperspectral coregistered full-Stokes-vector detection." In International Symposium on Optical Science and Technology, edited by Edward W. Taylor. SPIE, 2002. http://dx.doi.org/10.1117/12.454654.

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Maloney, P. G., F. E. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, and M. Winn. "InGaAs/InAlAs multi-quantum well light modulator and detector." In Optics East 2006, edited by Achyut K. Dutta, Yasutake Ohishi, Niloy K. Dutta, and Jesper Moerk. SPIE, 2006. http://dx.doi.org/10.1117/12.684686.

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Reports on the topic "Quantum well detector"

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Bloss, W., M. O'Loughlin, and M. Rosenbluth. Advances in Multiple Quantum Well IR Detectors. Fort Belvoir, VA: Defense Technical Information Center, October 1992. http://dx.doi.org/10.21236/ada260136.

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Simpson, M. L., D. P. Hutchinson, and J. Calabretta. Investigation of heterodyne performance of quantum-well detectors. Final report. Office of Scientific and Technical Information (OSTI), September 1994. http://dx.doi.org/10.2172/109660.

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Beck, William A., Mark S. Mirotznik, and Thomas S. Faska. Antenna Structures for Optical Coupling in Quantum-Well Infrared Detectors. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada342154.

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Shafraniuk, Serhii. Multispectral Detector Based on Array of Carbon-Nanotube Quantum Wells. Fort Belvoir, VA: Defense Technical Information Center, September 2009. http://dx.doi.org/10.21236/ada523322.

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Tsui, Daniel C. Noise Characteristics of Superlattice Energy Filters and Multi-Color Infrared Detection Using Quantum Well Microstructure. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada358197.

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